Resist underlayer film forming composition

By using a resist underlayer film forming composition of a polymer or compound containing a specific partial structure in semiconductor manufacturing, the problems of uneven formation of resistance pattern and poor adhesion under EUV light are solved, and more uniform film formation and lower LWR are achieved.

JP2025060875AActive Publication Date: 2025-04-10NISSAN CHEM CORP
3 Cites 0 Cited by

Patent Information

Application Number
JP2024229856
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2021-03-16
Filing Date
2024-12-26
Publication Date
2025-04-10
Estimated Expiration
2042-03-15

AI Technical Summary

Technical Problem

The films formed under EUV illumination are prone to pinholes and aggregation, resulting in uneven formation of resistance pattern, and it is difficult to improve the adhesion of resistance pattern during the development process, resulting in an increase in LWR.

Method used

Composition is formed using a resist underlayer film containing a specific partial structure, which is represented by formulas (100) and (101), through which polymers or compounds of these structures form coating film with solvents for forming a resist pattern in semiconductor manufacturing.

Benefits of technology

This method can significantly improve the uniformity and adhesion of the resist underlayer film, reduce LWR, ensure that the resist pattern is consistent in shape and has a good rectangular shape, especially under EUV light and electron beam exposure.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

To provide a composition for forming a resist underlayer film capable of forming a desired resist pattern, a resist pattern production method using the resist underlayer film forming composition and a method for manufacturing a semiconductor device.SOLUTION: There is provided a resist underlayer film forming composition which comprises a polymer represented by the following formula (P1): (in the formula (P1), A1, A2, A3, A4, A5 and A6 each independently represent a hydrogen atom, a methyl group or an ethyl group, Q1 represents a divalent organic group, T2 and T3 each independently represent a single bond, an ester bond or an ether bond, L2 and L3 each independently represent a single bond, an alkylene group having a carbon number of 1 to 10 which may be substituted or an alkenylene group having a carbon number of 2 to 10 which may be substituted, U represents a nitro group, D represents an aromatic ring or a heterocyclic ring having a carbon number of 6 to 40, n represents an integer of 0 to 3.) and a solvent.SELECTED DRAWING: None
Need to check novelty before this filing date? Find Prior Art