Reverse polarity protection circuit, semiconductor device, electronic equipment, vehicle

The reverse connection protection circuit addresses the challenge of protecting semiconductor devices from reverse connection states by using a transistor, control circuit, and clamp circuit to manage voltage and ensure device integrity during power supply open tests.

JP2025075992APending Publication Date: 2025-05-15ROHM CO LTD
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Patent Information

Application Number
JP2023187565
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-11-01
Publication Date
2025-05-15

AI Technical Summary

Technical Problem

Conventional semiconductor devices face challenges in protecting internal elements from reverse connection states, particularly during power supply open tests, where the device resistance of the reverse connection protection circuit becomes a limiting factor.

Method used

The proposed reverse connection protection circuit includes a first transistor connected between the ground electrode and an internal ground node, a control circuit to manage the transistor's state based on the power supply polarity, and a clamp circuit to limit the voltage across the transistor, ensuring it remains below a predetermined upper limit.

Benefits of technology

This configuration effectively protects internal circuitry by ensuring the transistor remains on during negative voltage conditions, thereby limiting drain-source voltage and ensuring the device can withstand power supply open tests without excessive voltage stress.

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Abstract

To improve the element withstand capacity of a reverse polarity protection circuit.SOLUTION: A reverse polarity protection circuit 40 comprises: a first transistor 41 connected between a ground electrode T4 and an internal ground node GND_INT; a control circuit 42 that turns the first transistor 41 on when a power supply electrode T1 is at a higher potential than the ground electrode T4 and turns the first transistor 41 off when the power supply electrode T1 is at a lower potential than the ground electrode T4; and a clamp circuit 43 connected between the control end of the first transistor 41 and the ground electrode T4 to limit the voltage between the two ends of the first transistor 41 to become equal to or less than a predetermined upper limit value.SELECTED DRAWING: Figure 7
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