Single photon detector
The single-photon avalanche diode design addresses noise, efficiency, and breakdown voltage issues by incorporating specific doping regions and a connection layer, enhancing performance and stability without a guard ring.
KR103013670B1Active Publication Date: 2026-09-02TRUPIXEL INC
9 Cites 0 Cited by
Patent Information
- Application Number
- KR1020240171732
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-09-28
- Filing Date
- 2024-11-27
- Publication Date
- 2026-09-02
- Estimated Expiration
- 2043-09-11
AI Technical Summary
Technical Problem
Existing single-photon detectors face challenges with noise characteristics, efficiency, high breakdown voltage, and the need for a guard ring, which affect their stability and performance.
Method used
A single-photon avalanche diode design featuring a high-concentration doping region, low-concentration doping region, and a guard ring structure, along with a connection layer and bias pattern, enhances noise reduction and efficiency while eliminating the need for a traditional guard ring.
Benefits of technology
The design improves noise characteristics, efficiency, and stability, reduces breakdown voltage, and operates without a guard ring, resulting in a more reliable single-photon detector.
✦ Generated by Eureka AI based on patent content.
Abstract
A single-photon detector comprises a high-concentration doping region having a first conductivity type, a first well provided on the high-concentration doping region and having a second conductivity type different from the first conductivity type, a first low-concentration doping region provided between the high-concentration doping region and the first well, and a contact electrically connected to the first well and having a second conductivity type, a single-photon avalanche diode having a first surface and a second surface facing each other, and an output pattern electrically connected to the high-concentration doping region and configured to reflect light transmitted through the single-photon avalanche diode, and a bias pattern electrically connected to the contact and configured to reflect light transmitted through the single-photon avalanche diode, and a connection layer provided on the first surface.
Need to check novelty before this filing date? Find Prior Art