Chemical soak preclean for selective metal fill and chemical adsorption

The use of WF6 and MoCl5 immersion processes in semiconductor manufacturing addresses the issue of molybdenum oxidation and nitriding, enhancing interconnect resistance and device performance by selectively removing metal oxides and forming a protective passivation layer.

TW202630947APending Publication Date: 2026-07-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114139267
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-08
Filing Date
2025-10-13
Publication Date
2026-07-16

AI Technical Summary

Technical Problem

In semiconductor device manufacturing, particularly at 1.4 nanometer nodes and above, the use of molybdenum as a metal filler layer is prone to nitriding and oxidation due to process gases and ambient gases, leading to increased resistance in MOL and BEOL interconnects, which degrades device performance.

Method used

A method involving two immersion processes using tungsten hexafluoride (WF6) and molybdenum pentachloride (MoCl5) gases to selectively remove metal oxides and nitrides from features in semiconductor devices, followed by a passivation layer to protect the metal filler material.

Benefits of technology

The method effectively reduces interconnect resistance by removing metal oxides and nitrides without damaging the feature sidewalls, maintaining the integrity of the semiconductor structure and improving electrical performance.

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Abstract

Embodiments described herein generally relate to semiconductor device fabrication. More specifically, embodiments of the present disclosure relate to methods of removing metal oxides during semiconductor device manufacturing. The method includes performing a first soak process on the semiconductor device structure, forming a metal fill material in at least one feature, and performing a second soak process on the semiconductor device structure. The semiconductor device structure includes at least one feature formed in a dielectric layer of the semiconductor device structure. The first soak process includes flowing a first precursor gas over the at least one feature. The metal fill material is formed by partially filling the at least one feature where a gap region forms between a sidewall of the at least one feature and the metal fill material. The second soak process includes flowing a second precursor gas over the at least one feature and the metal fill material.
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