Method for fabricating a HEMT device in an atomic layer etching reactor and use of the method in fabrication of a gallium-nitride-based HEMT

The hybrid ALE and RIE process addresses non-uniformity and surface damage in GaN HEMT fabrication by combining cyclic and continuous etching techniques, enhancing precision and reliability of HEMT devices.

TW202633113APending Publication Date: 2026-08-01ALIXLABS AB
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Patent Information

Application Number
TW114147597
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-04
Filing Date
2025-12-04
Publication Date
2026-08-01

AI Technical Summary

Technical Problem

Existing GaN HEMT fabrication processes face issues such as non-uniform etching, low accuracy, surface damage, and micromasking due to reactive ion etching (RIE), leading to inconsistent device performance and reduced yields.

Method used

A hybrid atomic layer etching (ALE) and reactive ion etching (RIE) process that combines self-limiting cyclic steps with continuous dry etching, achieving high uniformity and low surface roughness, using a method that includes surface modification with reactive gases and low-energy particle beams to minimize defects and ensure precise etching.

Benefits of technology

The hybrid etching process achieves high precision and uniformity, reducing surface damage and defects, resulting in improved performance and reliability of HEMT devices with well-defined features.

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Abstract

The present invention relates to a method for fabricating a high electron mobility transistor device in an atomic layer etching reactor. The method comprises: providing a wafer comprising a selectively masked gallium nitride layer; and subjecting the selectively masked gallium nitride layer for an etching process comprising alternating surface modification and removal steps. The surface modification steps are performed under reactive gas flow. The removal steps are performed using a low-energy particle beam primarily comprised of noble gas species. A plasma is maintained continuously throughout the etching process. The surface modification and removal steps are repeated or merged to achieve a cyclic or quasi-continuous atomic-layer etching process transitioning to a continuous dry etch mode in which reactive gases and plasma are continuously supplied while maintaining self-limiting surface kinetics once steady-state self-limiting conditions are reached.
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