Devices comprising tunable tetragonal ferrimagnetic Heusler compounds
By using the combination of the tunable tetragonal ferromagnetic Hasler compound Mn3-xCoxGe with the substrate and multilayer structure, the problem of existing MTJs being difficult to maintain perpendicular magnetic anisotropy in small-sized applications is solved, and high TMR and high density MRAM performance is achieved.
CN111490154BActive Publication Date: 2025-03-21SAMSUNG ELECTRONICS CO LTD +1
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Patent Information
- Application Number
- CN202010076710.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-01-28
- Filing Date
- 2020-01-23
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2040-01-23
AI Technical Summary
Technical Problem
The existing magnetic tunnel junction (MTJ) is difficult to maintain perpendicular magnetic anisotropy (PMA) after the size is reduced, limiting the development of magnetic random access memory (MRAM) in small-size applications.
Method used
The adjustable tetragonal ferromagnetic Hasler compound Mn3-xCoxGe is used to combine the substrate and a multi-layer structure, and the proximity between the Hasler compound and the substrate is achieved through the passage of spin polarization current, thereby maintaining perpendicular magnetic anisotropy.
Benefits of technology
It realizes the maintenance of high perpendicular magnetic anisotropy and high self-rotation magnetoresistance (TMR) under small-sized conditions, improving the performance and density of MRAM.
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Abstract
A device including a tunable tetragonal ferromagnetic Heusler compound is disclosed. The device includes a Heusler compound in the form of Mn 3‑x Co x Ge, where 0 < x ≤ 1, and where Co accounts for at least 0.4 atomic percent of the Heusler compound. The device further includes a substrate oriented in the (001) direction and in the form of YMn 1+d , where Y includes an element selected from the group consisting of Ir and Pt, and 0 ≤ d ≤ 4. The tetragonal Heusler compound and the substrate are in proximity to each other such that a spin-polarized current passes from one of the tetragonal Heusler compound and the substrate through the other of the tetragonal Heusler compound and the substrate. In one aspect, the device further includes a multilayer structure that is non-magnetic at room temperature. The structure includes alternating layers of Co and E. E includes at least one other element including Al. The composition of the structure is represented by Co 1‑y E y , and y is in the range of 0.45 to 0.55.
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