Method for manufacturing semiconductor element

By using multi-layer coating technology in the semiconductor component manufacturing process, the planarization layer is formed by using acid diffusion and cross-linking reactions, which solves the problem of difficult control of planarity and uniformity after the size of semiconductor component is reduced, and the effect of improving production capacity and product reliability is achieved.

CN112864002BActive Publication Date: 2025-03-25TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN202010788008.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-11-27
Filing Date
2020-08-07
Publication Date
2025-03-25
Estimated Expiration
2041-01-27

AI Technical Summary

Technical Problem

As semiconductor component size decreases, controlling fluctuations and flatness in the manufacturing process becomes more difficult, resulting in reduced production capacity and low reliability of finished products.

Method used

Using multi-layer coating technology, a series of cross-linked and uncrosslinked spin-coated carbon layers are formed on the patterned surface of the substrate, and a planarized layer is formed to improve planarity and uniformity by using the diffusion and cross-linking reaction of acids.

Benefits of technology

It effectively improves the planarity and uniformity problems in the manufacturing process of semiconductor components, improves production capacity and finished product reliability, and does not increase excessive costs.

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Abstract

A method for manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarization material on a patterned surface of a substrate, forming a second layer of a second planarization material on the first planarization layer, cross-linking a portion of the first planarization material and a portion of the second planarization material, and removing a portion of the second planarization material that is not cross-linked. In one embodiment, the method further includes forming a third layer of a third planarization material on the second planarization material after removing the portion of the second planarization material that is not cross-linked. The third planarization material may include a bottom anti-reflective coating or spin-on carbon, and an acid or an acid generator. The first planarization material may include spin-on carbon and an acid, a thermal acid generator, or a photoacid generator.
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