LED display module, method for manufacturing LED display module, and display device including LED display module

Abstract

A display panel including an LED device and a method for manufacturing a display module are disclosed. According to an embodiment, the method for manufacturing a display module includes: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide a light emitting area according to each of the plurality of LEDs, wherein forming the plurality of LEDs includes: etching a growth substrate to form the plurality of LEDs, and forming a plurality of protrusions and a plurality of recesses on the growth substrate; and forming a reflective layer on surfaces of the plurality of protrusions and surfaces of the plurality of recesses, and wherein forming the plurality of partition walls includes removing a portion of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and spaces between the plurality of partition walls are formed based on the plurality of recesses.

Description

Technical Field

[0001] The present invention relates to a light emitting diode (LED) display module, a method for manufacturing the LED display module, and a display device including the LED display module. More specifically, the present invention relates to a plurality of partition walls and a reflective layer formed on one side of the plurality of partition walls, a method for manufacturing the LED display module, and a display device including the LED display module. Background Art

[0002] Recently, semiconductor-based light emitting diodes (LEDs) have been used in various industries such as display applications due to their high luminous efficiency and long life. Micro LED devices have attracted widespread attention as light sources forming individual pixel elements in display devices of the related art.

[0003] In the manufacturing process of LED display panels, there is a need to improve the characteristics of partition walls that separate the light-emitting areas of LED devices and improve the efficiency of their manufacturing methods, and there are problems such as improving light-emitting efficiency and the accuracy and efficiency of the transfer process.

[0004] When the partition wall is manufactured by photolithography using photoresist, there is a limit to the rigidity of the partition wall relative to the weight load and external pressure that may be generated during the manufacturing process of the display panel. In addition, it is difficult to predict the reflection effect on the light emitted from the LED device. In addition, there is an increasing need to simplify the manufacturing process of the partition wall.

[0005] Meanwhile, a micro-LED (mLED or μLED) display panel is a flat display panel and may be composed of a plurality of inorganic light-emitting diodes (inorganic LEDs), each of which is less than 100 micrometers in size. Compared with a liquid crystal display (LCD) panel that requires a backlight, a micro-LED display panel provides better contrast, response time, and energy efficiency. In addition, although both organic light-emitting diodes (organic LEDs) and micro-LEDs have good energy efficiency, micro-LEDs have the following advantages: better brightness and luminous efficiency and longer lifespan than OLEDs. Summary of the invention

[0006]

Technical issues

[0007] The present disclosure provides a display module including a high-performance partition wall, a display device, and an efficient method for manufacturing a display module including a high-performance partition wall.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

[0009]

Technical solution

[0010] According to one aspect of the present disclosure, a display module includes: a plurality of light emitting diodes (LEDs); a driving substrate; a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs; a plurality of partition walls configured to divide a light emitting area according to each of the plurality of LEDs; and a reflective layer formed on both sides of each of the plurality of partition walls.

[0011] Each of the plurality of partition walls may be a portion of a plurality of protrusions formed by etching the growth substrate to form the plurality of LEDs; and the plurality of protrusions may be formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

[0012] Each of the plurality of partition walls may be formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap with each other.

[0013] A width of each of the plurality of partition walls may be narrower as the height increases toward an upper portion.

[0014] The display module may also include: a plurality of pixels in a matrix form, wherein the plurality of pixels may respectively include a red (R) sub-pixel, a green (G) sub-pixel, and a blue (B) sub-pixel, and wherein the R sub-pixel, the G sub-pixel, and the B sub-pixel may respectively correspond to one LED device among the plurality of LEDs.

[0015] The display module may further include: a color conversion layer at a space between the plurality of partition walls, wherein the space between the plurality of partition walls may be formed based on a plurality of recesses formed together with a plurality of protrusions on the growth substrate, and wherein the color conversion layer may include quantum dots (QD) or phosphors.

[0016] Each of the plurality of partition walls may include silicon.

[0017] The reflective layer may include at least one of aluminum (Al) and aluminum nitride (AlN).

[0018] The reflective layer may include: a first reflective layer including aluminum; a second reflective layer on the first reflective layer and including aluminum nitride; and a third reflective layer on the second reflective layer and including aluminum.

[0019] Each of the plurality of LEDs may be a flip-chip type micro LED device.

[0020] According to another aspect of the present disclosure, a method for manufacturing a display module includes: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide a light emitting area according to each of the plurality of LEDs, wherein forming the plurality of LEDs includes: etching a growth substrate to form the plurality of LEDs, and forming a plurality of protrusions and a plurality of recesses on the growth substrate; and forming a reflective layer on surfaces of the plurality of protrusions and surfaces of the plurality of recesses, and wherein forming the plurality of partition walls includes removing a portion of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and spaces between the plurality of partition walls are formed based on the plurality of recesses.

[0021] Forming multiple LEDs may also include: growing an n-type semiconductor layer in a horizontal direction on a reflective layer formed on a top surface of multiple protrusions; regrowing the n-type semiconductor layer grown in a horizontal direction; forming a light-emitting layer and a p-type semiconductor layer on the regrown n-type semiconductor layer; forming a region for dividing each of the multiple LEDs and a region for arranging an n-type electrode by etching the n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer; and forming an n-type electrode electrically connected to the n-type semiconductor layer on the region for arranging the n-type electrode, and forming a p-type electrode electrically connected to the p-type semiconductor on the p-type semiconductor.

[0022] Each of the plurality of partition walls is formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap with each other.

[0023] A width of each of the plurality of partition walls may become narrower as the height approaches an upper portion.

[0024] Each of the plurality of partition walls may include silicon.

[0025] The reflective layer may include at least one of aluminum (Al) and aluminum nitride (AlN).

[0026] The method may further include forming a color conversion layer at a space between the plurality of partition walls, wherein the color conversion layer may include quantum dots (QD) or phosphors.

[0027] According to another aspect of the present disclosure, a display device includes: a plurality of display modules; and a support plate configured to support the plurality of display modules, wherein each of the plurality of display modules includes: a plurality of light emitting diodes (LEDs); a driving substrate; a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs; a plurality of partition walls configured to divide a light emitting area according to each of the plurality of LEDs; and a reflective layer formed on both sides of each of the plurality of partition walls.

[0028] Each of the plurality of partition walls may be a portion of a plurality of protrusions formed by etching the growth substrate to form the plurality of LEDs; and the plurality of protrusions may be formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

[0029] The display module may also include a plurality of pixels in a matrix form, which may respectively include red (R) sub-pixels, green (G) sub-pixels, and blue (B) sub-pixels, and the R sub-pixels, G sub-pixels, and B sub-pixels may respectively correspond to one LED device among the plurality of LEDs.

[0030] According to another aspect of the present disclosure, a display module includes: a plurality of light emitting diodes (LEDs); a plurality of partition walls configured to divide a light emitting area according to each of the plurality of LEDs; and a reflective layer formed on both sides of each of the plurality of partition walls, wherein, for each of the plurality of partition walls, an angle between a lower surface of the partition wall and an outer surface of the reflective layer is less than 90 degrees.

[0031] Each of the plurality of partition walls may be a portion of a plurality of protrusions formed by etching the growth substrate to form the plurality of LEDs; and the plurality of protrusions may be formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

[0032] Each of the plurality of partition walls may be formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap with each other.

[0033] A width of each of the plurality of partition walls may be narrower as the height increases toward an upper portion.

[0034] The angle can be greater than 45 degrees. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0036] Figure 1 is a cross-sectional view briefly showing the structure of a display module according to an embodiment;

[0037] Figure 2A is a graph showing luminous efficiency according to angles of a plurality of partition walls according to an embodiment;

[0038] Figure 2B is a graph showing luminous efficiency according to angles of a plurality of partition walls according to an embodiment;

[0039] Figure 3A is a flow chart briefly showing a method of manufacturing a display module according to an embodiment;

[0040] Figure 3B is shown in more detail Figure 3A Flowchart of each operation;

[0041] 4A to 4H and FIG. 5A to FIG. 5C is a cross-sectional view illustrating each operation of a method for manufacturing a display module according to an embodiment;

[0042] Figure 6 is a diagram briefly showing a process of transferring an LED chip to a driving substrate according to an embodiment;

[0043] Figure 7 is a diagram showing a structure of a display module according to an embodiment;

[0044] Figure 8 is a diagram showing a configuration of a display module according to an embodiment;

[0045] Fig. 9A is a block diagram showing a simple configuration of a display device including a display module according to an embodiment;

[0046] Fig. 9B is a diagram showing a configuration of a display panel according to an embodiment;

[0047] Fig. 10A is a diagram illustrating a computer-readable recording medium having stored therein instructions for executing each operation of the method for manufacturing a display module according to an embodiment; and

[0048] Fig. 10B is a diagram illustrating a computer-readable recording medium in which instructions for executing each operation of a method for controlling a display module are stored according to an embodiment. DETAILED DESCRIPTION

[0049] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it will be appreciated that the present disclosure is not limited to the embodiments described below, but also includes various modifications, equivalents and / or substitutions of these embodiments. With regard to the description of the accompanying drawings, similar reference numerals may be used for similar constituent elements.

[0050] In the following description, when it is determined that a detailed description of the related art may obscure the gist of the present disclosure, such description may be omitted.

[0051] In addition, the following embodiments can be combined and modified in many different forms, and the scope of the technical spirit of the present disclosure is not limited to the following examples. On the contrary, these embodiments are provided so that the present disclosure will be comprehensive and complete, and will fully convey the technical spirit to those skilled in the art.

[0052] The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the scope of the claims.Unless otherwise specified, a singular expression includes a plural expression.

[0053] In this specification, expressions such as “having”, “may have”, “including”, “may include” and the like indicate the existence of corresponding features (for example, components such as numbers, functions, operations or parts), and do not exclude the existence of additional features.

[0054] In this document, expressions such as "at least one of A and / or B" or "one or more of A and / or B" include all possible combinations of the listed items. For example, "at least one of A and B" or "at least one of A or B" may include any of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B.

[0055] As used herein, the terms “first,” “second,” etc. may refer to various components regardless of order and / or importance, and may be used to distinguish one component from another without otherwise limiting the component.

[0056] If a specific element (e.g., a first element) is described as being “operably or communicatively coupled to” another element (e.g., a second element) or “connected to” another element (e.g., a second element), it should be understood that the specific element may be directly connected to the other element or connected through yet another element (e.g., a third element).

[0057] On the other hand, if a specific element (e.g., a first element) is described as being “directly coupled to” another element (e.g., a second element) or “directly connected to” another element (e.g., the second element), it can be understood that there is no element (e.g., a third element) between the specific element and the other element.

[0058] The term "planar" in the present disclosure means that no processing is performed during the formation of the non-conductor / semiconductor / conductor layer, and the term "non-planar" means that surface processing is performed during the formation of the non-conductor / semiconductor / conductor layer so that the surface area becomes larger than the "planar." The "non-planar" is not limited to a specific type.

[0059] Moreover, the expression "configured to" used in the present disclosure may be used interchangeably with other expressions (e.g., "suitable for", "capable of", "designed to", "suitable for", "manufactured to", and "capable of...") as appropriate. At the same time, the term "configured to" does not necessarily mean that a device is "specially designed to" in terms of hardware.

[0060] Rather, in some cases, the expression "a device configured to..." may mean that the device is "capable" of performing an operation together with another device or component. For example, the phrase "a processor configured to perform A, B, and C" may mean a dedicated processor (e.g., an embedded processor) for performing the corresponding operations, or a general-purpose processor (e.g., a central processing unit (CPU) or an application processor) that can perform the corresponding operations by executing one or more software programs stored in a storage device.

[0061] The display device according to various embodiments may include, for example, a television, a monitor, a smart phone, a tablet personal computer (PC), a wearable device, a portable multimedia player, a digital camera, a portable device, and the like.

[0062] It should be understood that the various elements and regions in the drawings are not shown to scale. Therefore, the scope of the present disclosure is not limited by the relative sizes or intervals in the drawings.

[0063] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present disclosure pertains can easily make and use the embodiments.

[0064] Figure 1 is a cross-sectional view briefly showing the structure of a display module 110 according to an embodiment.

[0065] Figure 1 A plurality of identical or substantially similar configurations are included, and redundant reference numerals for identical components are omitted.

[0066] like Figure 1 As shown, the display module 110 according to the embodiment includes a plurality of light emitting diodes (LEDs) 111, a plurality of partition walls 113, and a reflective layer 114. Each of the plurality of LEDs 111 includes a plurality of semiconductor layers, an n-type electrode 50, and a p-type electrode 60. In addition, the plurality of semiconductor layers include an n-type semiconductor layer 20, a p-type semiconductor layer 40, and a light emitting layer 30.

[0067] The n-type semiconductor layer 20 and the p-type semiconductor layer 40 may be formed of a compound semiconductor (e.g., group III-V, group II-VI). The n-type semiconductor layer 20 and the p-type semiconductor layer 40 may be formed of a nitride semiconductor layer. For example, the n-type semiconductor layer 20 may be an n-gallium nitride (GaN) semiconductor layer, and the p-type semiconductor layer 40 may be a p-GaN semiconductor layer, but it should be understood that one or more other embodiments are not limited thereto. That is, the n-type semiconductor layer 20 and the p-type semiconductor layer 40 may be made of various materials depending on the various characteristics required, designed, or used by the LED device 111.

[0068] An n-type semiconductor is a semiconductor in which free electrons are used as carriers for relocating charges, and can be formed by doping an n-type dopant such as Si, Ge, Sn, Te, etc. A p-type semiconductor is a semiconductor in which holes are used as carriers for relocating charges, and can be formed by doping a p-type dopant such as Mg, Zn, Ca, Ba, etc.

[0069] The light emitting layer 30, the n-type semiconductor layer 20, and the p-type semiconductor layer 40 may be formed of various semiconductors having band gaps corresponding to specific regions within the spectrum. For example, a red LED device 111 having a wavelength of 600-750 nm may include one or more layers based on an AlInGaP-based semiconductor. A blue LED device 111 having a wavelength of 450-490 nm and a green LED device 111 having a wavelength of 500-570 nm may each include one or more layers based on an AlInGaN-based semiconductor.

[0070] The light emitting layer 30 is disposed between the n-type semiconductor layer 20 and the p-type semiconductor layer 40, and is a layer where electrons as carriers of the n-type semiconductor layer 20 and a home as a carrier of the p-type semiconductor layer 40 meet. When (or based on) electrons and holes meet in the light emitting layer 30, a potential barrier is formed as the electrons and holes recombine. When (or based on) electrons and holes transition over the potential barrier to a low energy level according to an applied voltage, light of a corresponding wavelength is emitted.

[0071] The light emitting layer 30 may have a multiple quantum well (MQW) structure, but it should be understood that one or more other embodiments are not limited thereto. For example, according to one or more other embodiments, the light emitting layer 30 may have a variety of structures, such as a single quantum well (SQW) structure or a quantum dot (QD) structure. If the light emitting layer 30 is formed in an MQW structure, the well layer / barrier layer of the light emitting layer 30 may be formed in the same structure as (but not limited to) InGaN / GaN, InGaN / InGaN, GaAs (InGaGs) / AlGaAs, etc. The number of quantum wells included in the light emitting layer 30 is also not limited to a specific number.

[0072] exist Figure 1 In the figure, it is shown that the light emitting layer 30 is formed on the n-type semiconductor layer 20, and the p-type semiconductor layer 40 is formed on the light emitting layer 30. However, it should be understood that the light emitting layer 30 may be formed on the p-type semiconductor layer 40, and the n-type semiconductor layer 20 may be formed on the light emitting layer 30.

[0073] The plurality of partition walls 113 are used to distinguish the light emitting area of ​​each of the plurality of LEDs 111, and the structure including the plurality of partition walls 113 may be referred to as a so-called rib structure. Specifically, each of the plurality of partition walls 113 may be formed to have a predetermined height so that the wavelengths of light emitted by each of the plurality of LED devices 111 do not overlap with each other. For example, when the color conversion layer formed in the space between the plurality of partition walls 113 includes quantum dots (QD), each of the plurality of partition walls 113 may be formed to have a height of 3 μm or more. As described below, when the color conversion layer formed in the space between the plurality of partition walls 113 includes a phosphor, each of the plurality of partition walls 113 may be formed to have a height of 20 μm or more.

[0074] The plurality of partition walls 113 according to the embodiment are formed by etching the growth substrate to form the plurality of LEDs 111. Specifically, the plurality of partition walls 113 are a portion of a plurality of protrusions formed by etching the growth substrate, wherein the plurality of protrusions are formed before the plurality of semiconductor layers included in the plurality of LEDs 111 are grown on the growth substrate. That is, the plurality of partition walls 113 according to the embodiment are not formed through a separate process after the LED device 111 is manufactured, but are formed based on etching performed on the growth substrate before the plurality of semiconductor layers included in the LED device 111 are grown on the growth substrate. FIG. 2A to FIG. 2B , FIG. 3A to FIG. 3B as well as 4A to 4H A process of forming the plurality of partition walls 113 is described.

[0075] The reflective layer 114 is formed on both sides of each of the plurality of partition walls 113. The reflective layer 114 reflects light emitted from the LED device 111 so as not to be absorbed by the partition walls 113, thereby improving the light extraction efficiency (LEE) of the LED device 111. The reflective layer 114 may be composed of or include at least one of aluminum (Al) and aluminum nitride (AlN), but the material of the reflective layer 114 according to the present disclosure is not limited to a specific material. FIG. 2A to FIG. 2B , FIG. 3A to FIG. 3B as well as 4A to 4H A process of forming the reflective layer 114 is described.

[0076] Specifically, the reflective layer 114 may be formed of an aluminum layer formed by in-situ processing during epitaxial growth. In addition, the reflective layer may include multiple layers, and the outermost layer may include aluminum. For example, the reflective layer 114 may be composed of multiple layers in an annular layer structure, the multiple layers including a first reflective layer made of aluminum, a second reflective layer formed on the first reflective layer and made of aluminum nitride, and a third reflective layer formed on the second reflective layer and made of aluminum.

[0077] As another example, the reflective layer 114 may include a first reflective layer made of aluminum, a second reflective layer formed on the first reflective layer and made of aluminum nitride, AlxGal-xN (general formula: 0=x<1), and aluminum nitride stacked in sequence, and a third reflective layer formed on the second reflective layer and made of aluminum.

[0078] The reflective layer 114 may be formed to have a thickness of several nanometers to several tens of nanometers. The material and thickness of the reflective layer 114 are not limited thereto.

[0079] It has been described that the reflective layer 114 is formed on both sides of each of the plurality of partition walls 113, but it should be understood that the reflective layer 114 may be additionally formed on both side walls of the LED device 111 and on the opposite side of the light emitting surface of the LED device 111. In this case, the reflective layer 114 may be formed of a metal reflector or a distributed Bragg reflector structure.

[0080] like Figure 1 As shown, the LED device 111 according to the embodiment may be implemented as a flip chip type, in which the first electrode and the second electrode are disposed to face opposite surfaces of the light emitting surface of the LED 111. The LED device 111 may be a micro LED device 111. Specifically, the LED device 111 may be a micro LED device 111, the length of which is greater than or equal to 1 μm and less than or equal to 100 μm in width and height.

[0081] In addition, the display module 110 includes the following reference Figure 7 Describe the drive circuit.

[0082] The display module 110 according to the embodiment may be implemented not only as a separate device but also as a unit for configuring a display panel. A plurality of display modules 110 may be connected in a matrix form to form a display panel. Fig. 9B An example of a plurality of display modules 110 forming a display panel is described.

[0083] According to the embodiment as described above, since the plurality of partition walls 113 are formed based on the growth substrate (e.g., silicon) of the LED device 111, the rigidity and / or strength of the partition walls 113 are significantly improved compared to the partition walls formed of photoresins in the prior art. Therefore, stability of weight loads, external pressures, etc. that may be generated during the entire manufacturing process of the display module 110 can be expected. In addition, since the display module 110 according to the embodiment includes the reflective layer 114 formed on both sides of the partition wall 113, it is expected that the luminous efficiency can be improved.

[0084] According to the embodiment, the light emitting efficiency can be further improved according to the angles of the plurality of partition walls 113, which will be described below with reference to Figure 2A and Figure 2B Give a description.

[0085] Figure 2A and Figure 2B is a graph showing light emitting efficiency according to angles of a plurality of partition walls 113 according to an embodiment.

[0086] The angles of the plurality of partition walls 113 may be determined so that the plurality of partition walls 113 do not limit the luminous efficiency of the plurality of LEDs 111 according to the angles. In addition, the angles of the plurality of partition walls 113 may be determined to improve the luminous efficiency. According to an embodiment, the reflective layer 114 is formed on both sides of the plurality of partition walls 113, and therefore, the angles of the plurality of partition walls 113 and the reflective layer 114 may have a great influence on the luminous efficiency.

[0087] According to an embodiment, the width of each of the plurality of partition walls 113 is narrowed in the direction toward the upper portion. In this case, the width of each of the plurality of partition walls 113 (or barriers) is narrowed in the direction toward the upper portion, which may mean that the angle between the lower surface of the partition wall 113 and both sides of the partition wall 113 is less than 90 degrees relative to the cross section of the partition wall 113. Hereinafter, the angle between the lower surface of the partition wall 113 and both sides of the partition wall 113 is referred to as the angle of the partition wall 113 relative to the cross section of the partition wall 113.

[0088] If the angle of the partition wall 113 exceeds 90 degrees, the width of the light emitting surface of the LED device 111 becomes narrower in the direction toward the upper portion, thereby reducing the light extraction efficiency (LEE) of the LED device 111. Figure 1 As shown, the angle of each of the plurality of partition walls 113 according to an embodiment may be less than 90 degrees.

[0089] Figure 2A A cross-sectional view of the display module 110 is shown, wherein the angle of the partition wall 113 is 90 degrees. Figure 2B 1 is a graph showing the external quantum efficiency (EQE) when the angle of the partition wall 113 is 45 degrees (210) and the angle of the barrier 113 is 90 degrees (220), respectively. EQE is defined as the number of photons emitted divided by the number of electrons injected, and is a function of the internal quantum efficiency (IQE) and light extraction efficiency of the LED device 111. The luminous efficiency of the LED device 111 varies depending on the internal quantum efficiency and the external quantum efficiency.

[0090] like Figure 2BAs shown, when the angle of the partition wall 113 is 45 degrees (210), the external quantum efficiency of the LED device 111 is improved compared to the case where the angle of the barrier 113 is 90 degrees (220). The more the angle of the partition wall 113 is reduced from 90 degrees (until it is reduced to 45 degrees), the more the external quantum efficiency of the LED device 111 is increased. Therefore, the angle of the partition wall 113 according to one or more embodiments is close to 45 degrees.

[0091] As mentioned above Figure 1 described, and the following references FIG. 3A to FIG. 3B and 4A to 4H As described in detail, the plurality of partition walls 113 according to the embodiment may be formed based on the plurality of protrusions formed before the plurality of semiconductor layers included in the LED device 111 are grown on the growth substrate. Therefore, during the manufacturing process of the LED device 111, it is also determined as described above with reference to Figure 2A and Figure 2B The angle of the partition wall 113 is described.

[0092] Although the above description is about the angle of the plurality of partition walls 113, it is assumed that the reflective layer 114 formed on both sides of the plurality of partition walls 113 has a layer structure such that the angle of the plurality of partition walls 113 and the angle of the reflective layer 114 correspond to each other. According to another embodiment, the angle of the partition wall 113 itself may be 90 degrees, and the reflective layer 114 formed on both sides of the plurality of partition walls 113 may have an angle less than 90 degrees. In other words, the reflective layer 114 and the plurality of layers included in the reflective layer may be formed to be narrowed in a direction toward an upper portion.

[0093] A method of manufacturing the display module 110 and its effects will now be described below.

[0094] Figure 3A is a flowchart briefly illustrating a method of manufacturing the display module 110 according to an embodiment. Figure 3B is shown in more detail Figure 3A A flowchart of each operation. 4A to 4H and FIG. 5A to FIG. 5C 1 is a cross-sectional view illustrating each operation of a method for manufacturing the display module 110 according to an embodiment.

[0095] Now refer to 4A to 4H and FIG. 5A to FIG. 5C as well as Figure 3A and Figure 3B . As already referred to Figure 1 The configuration included in the display module 110 and its functions have been described in detail, and thus the detailed description may not be repeated below. 4A to 4H In the drawings, only the configurations or spaces formed in the corresponding steps are marked with reference numerals to clarify the configurations formed in each operation.

[0096] like Figure 3A As shown, the method of manufacturing the display module 110 according to the embodiment includes: forming a plurality of LEDs 111 in operation S3100; and forming a plurality of partition walls 113 in operation S3200 for dividing a light emitting area according to each of the plurality of LEDs 111. Forming the plurality of LEDs 111 in operation S3100 includes: Figure 3B The multiple operations S3110 to S3170 shown in FIG. Figure 3B The step of forming the plurality of partition walls 113 in operation S3200 is performed in the same manner as operation S3210.

[0097] Figure 4A FIG. 1 shows a growth substrate 10 for forming an LED device 111 according to an embodiment. The growth substrate 10 may be a material suitable for growing a semiconductor, a carrier wafer, etc. The growth substrate 10 may be made of a material such as silicon (Si) or sapphire (Al). 2 5O 4 ) materials, but can also be made of materials such as SiC, GaN, GaAs, ZnO, etc.

[0098] The growth substrate 10 according to the embodiment is preferably composed of silicon (Si). As described below, in the case of a silicon growth substrate 10, it is easy to etch the growth substrate 10 so that each of the plurality of partition walls 113 is formed to a predetermined height, so that the wavelengths of light emitted by each of the plurality of LED light emitting elements 111 do not overlap with each other. However, the growth substrate 10 used in the present disclosure is not limited to a growth substrate 10 of a specific material.

[0099] When the growth substrate 10 is provided, as Figure 4B As shown, in operation S3110, the growth substrate 10 for forming a plurality of LEDs 111 is etched. Specifically, the growth substrate 10 for forming a plurality of LEDs 111 is etched to form a plurality of depressions and a plurality of protrusions corresponding to the plurality of depressions on the growth substrate 10. In other words, if a growth substrate 10 is provided, a growth substrate 10′ having a so-called patterned sapphire / silicon substrate (PSS) structure is formed before a plurality of semiconductor layers are grown on the growth substrate 10. The growth substrate 10′ of the PSS structure may refer to a pattern of a predetermined shape formed on the surface of the growth substrate 10 to form the LED device 111. If a semiconductor layer is grown on the growth substrate 10′ of the PSS structure, crystal defects and total internal reflection may be reduced compared to the case of growing on a planar growth substrate. Therefore, the luminous efficiency may be improved. The formation of the PSS structure may be performed mainly using an etching technique (e.g., dry plasma etching), but is not limited to a specific processing technique. The specific form of the PSS structure is also not limited to a specific type.

[0100] In the present disclosure, etching the growth substrate 10 to form a plurality of LEDs 111 is characterized in that a plurality of partition walls 113 are formed based on etching. Figure 4H As described above, the plurality of partition walls 113 are formed based on the plurality of protrusions formed by etching, and together with the plurality of protrusions, spaces between the plurality of partition walls 113 are formed based on the plurality of recesses formed by etching.

[0101] Therefore, the etching of the growth substrate 10 according to the embodiment may be performed in consideration of the height and angle of the plurality of partition walls 113. The etching of the growth substrate 10 may be performed so that each of the plurality of partition walls 113 has a predetermined height so that the wavelengths of light emitted by each of the plurality of LEDs 111 do not overlap with each other. In addition, the etching of the growth substrate 10 may be performed so that the width of each of the plurality of barrier ribs 113 becomes narrower in a direction toward an upper portion.

[0102] If the growth substrate 10 is etched, Figure 4C As shown, in operation S3120, a reflective layer 114 is formed on the surface of the plurality of protrusions and the plurality of recesses. The reflective layer 114 may be formed of at least one of aluminum (Al) and aluminum nitride (AlN), and may have a thickness of several nanometers or tens of nanometers. However, the material and thickness of the reflective layer 114 are not limited thereto.

[0103] Specifically, the process of forming the reflective layer 114 may be performed by coating the entire portion of the aluminum layer on the surfaces of the plurality of protrusions and the plurality of recesses, and then performing C+ axis orientation control to form an aluminum nitride layer so that a polar surface of aluminum may be formed on the outermost surface of the growing crystal (i.e., the top surface of the plurality of protrusions formed on the growth substrate 10). As described below, additionally forming an aluminum nitride layer on the top surface of the plurality of protrusions after coating of the aluminum layer may be used to adjust the polarity of the reflective layer 114 to promote horizontal growth of the n-type semiconductor layer 20. If the Al polarity is not actively controlled, the Al polarity and the N polarity are mixed to increase the threading dislocation density (TDD), and this may result in a decrease in luminous efficiency.

[0104] However, the process of forming the reflective layer 114 according to the present disclosure is not limited to the above process, and aluminum may be additionally formed on the upper surfaces of the plurality of protrusions formed on the growth substrate 10 after the aluminum layer is completely coated on the surfaces of the plurality of protrusions and the plurality of recesses.

[0105] When (or based on) the partition walls 113 are formed as described below, the reflective layer 114 is arranged on both sides of the multiple partition walls 113 on the display module 110, and reflects the light emitted from the LED device 111 so that it is not absorbed by the partition walls 113, thereby increasing the light extraction efficiency (LEE) of the LED device 111.

[0106] The reflective layer 114 may be formed of an aluminum layer formed using an in-situ process during epitaxial growth. In addition, the reflective layer may include a plurality of layers, and the outermost layer may be formed of aluminum. For example, the reflective layer 114 may be formed of a multilayer of an annular layer structure including a first reflective layer made of aluminum, a second reflective layer formed on the first reflective layer and made of aluminum nitride, and a third reflective layer formed on the second reflective layer and made of aluminum.

[0107] As another example, the reflective layer 114 may include a first reflective layer made of aluminum, a second reflective layer formed on the first reflective layer and made of aluminum nitride, AlxGal-xN (general formula: 0=x<1), and aluminum nitride stacked in sequence, and a third reflective layer formed on the second reflective layer and made of aluminum.

[0108] When the reflective layer 114 is formed, Figure 4D As shown, in operation S3130, an n-type semiconductor layer 20 is grown in a horizontal direction on the reflective layer 114 formed on the upper surface of the plurality of protrusions. The n-type semiconductor layer 20 may be an AlxGayN (1≥x≥0, x+y=1) layer. When the n-type semiconductor layer 20 is grown in a horizontal direction on the reflective layer 114 formed on the upper surface of the plurality of protrusions, the upper portions of the plurality of recesses are closed by the grown n-type semiconductor layer 20. Here, the shape formed by closing the recesses is not limited to Figure 1 and Figure 4D Shapes shown, etc.

[0109] The horizontal growth process of the n-type semiconductor layer 20 may be performed by an epitaxial lateral overgrowth (ELO) technique. The horizontal epitaxial growth technique is a technique for growing a semiconductor layer in a horizontal direction to reduce crystal defects such as threading dislocations caused by a lattice constant difference between the growth substrate 10 and the semiconductor layer.

[0110] As described above, when an aluminum nitride layer is additionally formed on the upper surfaces of the plurality of protrusions formed on the growth substrate 10 after the aluminum layer is coated, the polarity of the reflective layer 114 is adjusted to promote the horizontal growth of the n-type semiconductor layer 20. However, it should be understood that one or more other embodiments are not limited thereto. For example, according to another embodiment, the n-type semiconductor layer 20 may also be grown in a horizontal direction after an aluminum layer is additionally formed on the upper surfaces of the plurality of protrusions formed on the growth substrate 10 after the aluminum layer is formed.

[0111] When the n-type semiconductor layer 20 is grown in the horizontal direction, in operation S3140, the n-type semiconductor layer 20 is regrown. When the n-type semiconductor layer is grown, as shown in FIG. Figure 4EAs shown, in operation S3150, the light emitting layer 30 and the p-type semiconductor layer 40 are formed on the n-type semiconductor layer 20. The process of forming the n-type semiconductor layer 20, the p-type semiconductor layer 40, and the light emitting layer 30 may be performed by techniques such as metal organic chemical vapor deposition (MOCVD), metal organic chemical vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and the like.

[0112] When the light emitting layer 30 and the p-type semiconductor layer 40 are formed, as shown in FIG. Figure 4F As shown, in operation S3160, the n-type semiconductor layer 20, the light emitting layer 30, and the p-type semiconductor layer 40 are etched to form a region 410 for separating each of the plurality of LEDs 111 and a region 420 for arranging the n-type electrode 50. Specifically, the region to be etched may be patterned by a photoresist process before etching, and the etching may be performed using a wet etching or dry etching technique. For example, the etching may be performed using a dry etching technique (e.g., reactive ion etching (RIE), cyclotron resonance (ECR), inductively coupled plasma reactive ion etching (ICP)-RIE, chemically assisted ion beam etching (CAIBE), etc.).

[0113] If a region for separating each of the plurality of LEDs 111 and a region for arranging the n-type electrode 50 are formed, in operation S3170, as shown in FIG. Figure 4G As shown, an n-type electrode 50 electrically connected to the n-type semiconductor layer 20 is formed on the region 420 for arranging the n-type electrode 50, and a p-type electrode 60 electrically connected to the p-type semiconductor layer 40 is formed on the p-type semiconductor layer 40. The n-type electrode 50 and the p-type electrode 60 can be formed on electrode materials such as Al, Ti, Ni, Pd, Ag, Au, indium tin oxide (ITO), and ZnO by various processing techniques such as sputtering, evaporation, and spin coating.

[0114] like Figure 4H As shown, when (or based on) forming a plurality of LEDs 111 according to the plurality of steps S3110 to S3170 as described above, in operation S3210, a portion of the growth substrate 10 is removed to form a plurality of partition walls 113. Specifically, the process of forming the plurality of partition walls 113 can be performed by removing a portion of the growth substrate 10, so that the plurality of partition walls 113 are formed based on the plurality of protrusions, and the spaces between the plurality of partition walls 113 are formed based on the plurality of recesses. More specifically, the plurality of partition walls 113 can be formed by removing a portion of the growth substrate 10. Figure 4G In the same state, the growth substrate 10 is removed from the bottom of the growth substrate 10 until a portion of the plurality of protrusions forms a plurality of partition walls 113, and a plurality of recesses can form a portion of the space between the plurality of partition walls 113, to form a plurality of partition walls 113, such as Figure 4H as shown in .

[0115] The process of removing the growth substrate 10 is performed while the reflective layer 114 is formed on the surfaces of the plurality of protrusions and the plurality of recesses formed on the growth substrate 10, and therefore, the presence of the reflective layer 114 reduces the etching rate of the process of removing the growth substrate 10. Therefore, the plurality of partition walls 113 and the reflective layer 114 are retained without a separate additional process, and the formation of the partition walls 113 is facilitated. In addition, since the etching rate is reduced by the reflective layer 114, damage to the LED device and the partition wall can be prevented during the process of removing the growth substrate 10.

[0116] In all embodiments, the removal process of the growth substrate 10 is not performed only by a specific method. By way of example, the growth substrate 10 made of a material safe to a chemical solution (eg, silicon or sapphire) may be removed by wet etching.

[0117] As described above, when the plurality of LEDs 111 are formed according to the plurality of steps S3110 to S3170, before the partition wall 113 is finally formed by removing a portion of the growth substrate 10, as shown in FIG. Figure 5A As shown, a plurality of LEDs 111 may be formed on the relay substrate 500. If the process of forming a plurality of partition walls 113 and the process of bonding the relay substrate 500 are performed, Figure 5B or Figure 5C As shown, a color conversion layer may be formed in a space between the plurality of partition walls 113. The color conversion layer may include quantum dots (QD) or phosphors.

[0118] like Figure 5B As shown, when (or based on) the plurality of LEDs are blue LEDs 111 emitting blue light, the color conversion layer may include a color conversion layer 510 for converting the blue light emitted from the plurality of LEDs 111 into red light and a color conversion layer 520 for converting the emitted blue light into green light. In this case, a color conversion layer for converting the plurality of LEDs emitting blue light into blue light is not required because the plurality of LEDs emit blue light.

[0119] like Figure 5C As shown, if the multiple LEDs are LED devices 111 that emit ultraviolet light, the color conversion layer may include a color conversion layer 530 for converting the ultraviolet light emitted from the multiple LEDs 111 into red light, a color conversion layer 540 for converting the emitted ultraviolet light into green light, and a color conversion layer 550 for converting the emitted ultraviolet light into blue light.

[0120] If the color conversion layer is formed, a color filter (CF), a protective layer, etc. are formed on the color conversion layer, packaging is performed, and a chip-level packaging process is completed.

[0121] In the case of forming multiple configurations that are equal to each other (eg, forming n-type electrode 50 and p-type electrode 60 as described above), there is no timing element between these two operations. Additionally, the order of the manufacturing method described above can be varied within the scope for achieving the purpose of the present disclosure.

[0122] According to various embodiments as described above, by forming a plurality of partition walls 113 based on etching of the growth substrate 10 to form the LED device 111, the process of forming the partition walls 113 is significantly simplified and the process cost can be reduced compared to deposition using a related art photoresin.

[0123] According to the prior art, after forming the LED device 111, it is necessary to perform processes such as photolithography, exposure, development, etc. and then form a black matrix, etc. At the same time, according to one or more embodiments, a plurality of partition walls 113 may be formed by etching the growth substrate 10 for forming the LED device 111 and removing a portion of the growth substrate 10 performed after forming the LED device 111. The presence of the reflective layer 114 formed on the side surface of the partition wall 113 changes the etching rate of the removal process of the growth substrate 10, and the partition wall 113 and the reflective layer 114 may be retained without a separate additional process. Therefore, the process of forming the partition wall 113 may also be facilitated.

[0124] According to the embodiment, the intervals between the plurality of LEDs 111 on the display module 110 are not determined solely by the transfer process but may also be determined by performing a process of etching the growth substrate 10 in consideration of the intervals between the plurality of LEDs 111. In view of this and the chip packaging process performed thereafter, minimization of device size and improvement of contrast can be expected.

[0125] Figure 6 is a diagram briefly showing a process of transferring an LED chip onto a driving substrate according to an embodiment.

[0126] As described above, when the LED device 111 is manufactured and the chip-level packaging process including the LED device 111 is completed, a process of transferring a plurality of formed chips to a driving substrate is performed. The transfer process according to various embodiments may be performed by various methods, such as, but not limited to, an electrostatic method, a die pressing method, a printing method, a metal bonding method, and the like.

[0127] In the process of manufacturing the display module 110 including the LED device 111, it is beneficial to improve the accuracy and efficiency of the transfer process because the transfer process (specifically, the process of accurately transferring a large number of microchips to a driving substrate) is important for realizing a micro LED display.

[0128] According to the embodiment, the intervals between the plurality of LEDs 111 are determined according to the intervals between the plurality of partition walls 113, and in the process of forming the plurality of protrusions and the plurality of recesses, the intervals between the plurality of partition walls 113 are determined by etching the growth substrate to form the LEDs 111. Therefore, according to the embodiment, after etching the growth substrate in consideration of the intervals between the plurality of LEDs 111, if the process of forming the LED device 111 and the chip-level packaging process as described above are performed, the accuracy and efficiency of the transfer process performed thereafter can be significantly improved.

[0129] For example, according to an embodiment, the transfer process may be performed chip by chip, including Figure 5B or Figure 5C As shown in the figure, there are three LEDs 111. Figure 6 As shown, by transferring the chip including three LEDs corresponding to the R sub-pixel, the G sub-pixel and the B sub-pixel to the driving substrate chip by chip, the transfer process in units of pixels can be realized. By way of another example, by performing the transfer process row by row, the lines corresponding to each of the R sub-pixel, the G sub-pixel and the B sub-pixel can be transferred to the driving substrate adjacent to each other, and one pixel is configured with adjacent R sub-pixels, G sub-pixels and B sub-pixels.

[0130] In the following, reference is made to Figure 7 , describes a process of forming the LED device 111, a process of chip-level packaging, and a specific process of manufacturing the display module 110 by performing a transfer process, etc.

[0131] Figure 7 is a diagram showing a structure of a display module 110 according to an embodiment.

[0132] like Figure 7 As shown, the display module 110 according to the embodiment includes a plurality of LEDs 111 and a driving substrate 112. The driving substrate 112 may include a driving circuit. The driving circuit may be configured separately from the driving substrate 112.

[0133] The driving circuit is a circuit for driving a plurality of LEDs 111. Specifically, a plurality of LEDs 111 may be mounted on a driving substrate 112 including a driving circuit, and may be electrically connected to each of the driving circuits. In addition, the driving circuit according to the embodiment may be arranged on the upper portion of the driving substrate 112. In other words, according to the embodiment, the driving circuit may be formed (or arranged) on the driving substrate 112, and a plurality of LEDs may be formed (or arranged) on the driving circuit. The driving of the display module 110 according to the embodiment may be performed in an active matrix manner, and the driving substrate 112 and the driving circuit may be designed to be suitable for the driving method. Another embodiment may also be applied to a passive matrix method.

[0134] The driving circuit may include a plurality of switching devices and a plurality of electrode pads, a plurality of circuit elements, etc. The switching device is a semiconductor device configured to control the driving of the plurality of LEDs 111 included in the display module 110, and is used as a kind of switch for each pixel of the display device 100. Figure 7 As shown, thin film transistors (TFTs) 114-1, 114-2, and 114-3 may be used as switching devices.

[0135] The n-type electrodes included in the plurality of LEDs 111 are connected to the electrode pad in the form of a common electrode, and the p-type electrodes may be individually connected to each of the pixel electrodes. Therefore, light emission of each of the plurality of LEDs 111 may be individually controlled.

[0136] Figure 8 is a diagram showing a configuration of a display module 110 according to an embodiment.

[0137] like Figure 8 As shown, the display module 110 according to the embodiment may include a plurality of pixels 810-1, 810-2, 810-3 arranged in a matrix form, and the plurality of pixels 810-1, 810-2, 810-3 may include an R sub-pixel 811, a G sub-pixel 812, and a B sub-pixel 813, respectively. Figure 8 An example is shown in which a plurality of sub-pixels are arranged in a 2×2 form in one pixel and a plurality of sub-pixels are arranged in a 3×1 form in one pixel, but it should be understood that this is merely an example and one or more other embodiments are not limited thereto.

[0138] The R sub-pixel 811, the G sub-pixel 812, and the B sub-pixel 813 may all correspond to the LED device 111. That each of the sub-pixels 811, 812, 813 corresponds to the LED device 111 may mean that each of the sub-pixels 811, 812, and 813 may be implemented by driving the LED device 111.

[0139] As described above, reference is considered when performing chip level packaging process and transfer process, etc. Figure 8 The configuration of pixels and sub-pixels of the display module 110 is described.

[0140] Fig. 9A is a block diagram showing a simple configuration of a display device 100 according to an embodiment, Fig. 9B is a diagram showing a configuration of a display panel according to an embodiment.

[0141] The display device 100 according to the embodiment may be implemented by at least one of a television (TV), a monitor, a smart phone, a laptop computer, a desktop computer, a portable multimedia player, and a wearable device. Any type of device capable of displaying visual information through the display module 110 may be included in the display device 100 according to the present disclosure.

[0142] Reference Fig. 9A , the display device 100 according to the embodiment includes a display panel 105 , a panel driver 120 , and a timing controller 130 .

[0143] The display panel 105 can display images under the control of the panel driver 120. The display panel 105 includes a plurality of display modules 110 and a support plate 107. Figure 1 , FIG. 2A to FIG. 2B , FIG. 3A to FIG. 3B , 4A to 4H , FIG. 5A to FIG. 5C as well as Figures 6 to 8 The display module 110 is described.

[0144] The support plate 107 supports the plurality of LED modules 110 so that the plurality of LED modules 110 connected to each other can form a display panel 105. Fig. 9B The structure of a plurality of LED modules 110 forming one display panel 105 through the support plate 107 is described.

[0145] The panel driver 120 includes a plurality of driver integrated circuits (ICs), and the display module 110 controls the display panel 105 or the driving of the display panel 105 through the plurality of driver ICs. Specifically, the plurality of driver ICs included in the panel driver 120 can control the light emission of the plurality of LEDs 111 connected to each of the driver circuits by driving the driver circuits included in the driver substrate 112.

[0146] The timing controller 130 controls the panel driver 120. Specifically, the timing controller 130 may adjust the image data signal to a signal required by the panel driver 120, and send the adjusted signal to the panel driver 120. The timing controller 130 may be referred to as a timing controller (T-CON), a data hub, a receiving card, a controller, etc. in the art, but it should be understood that the timing controller 130 may be applied to the present disclosure without being limited to its name, but based on a configuration that can control the panel driver 120 within a range that can achieve the purpose of the present disclosure.

[0147] As described above, the plurality of LEDs 111 are respectively connected to the driving circuits, and light emission of each of the plurality of LEDs 111 may be respectively controlled according to the control of the timing controller 130 and the panel driver 120 .

[0148] In addition, the display device 100 according to the embodiment may further include a memory and at least one processor. The memory may store at least one command related to the control of the display device 100, software related to the operation of the display device 100, image data, etc. The at least one processor may control the overall operation of the display device 100.

[0149] Reference Fig. 9B , the display panel 105 according to the embodiment may include a plurality of display modules 110. Specifically, the plurality of display modules 110 may be connected in a matrix form to form one display panel 105. That is, the display module 110 according to the embodiment may be implemented not only as an independent device but also as a unit for configuring the display panel 105.

[0150] The support plate 107 supports the plurality of LED modules 110 so that the plurality of LED modules 110 connected to each other can form a display panel 105. Fig. 9B As shown, a plurality of display modules 110 - 1 , 110 - 2 , 110 - 3 , 110 - 4 , 110 - 5 and 110 - 6 may form a display panel 105 via a support plate 107 .

[0151] exist Fig. 9B , it has been shown as an example that six display modules 110-1, 110-2, 110-3, 110-4, 110-5 and 110-6 are connected in a 3×2 form to form the display panel 105. It should be understood that the present disclosure is not limited to the number and arrangement form of the display modules 100.

[0152] Fig. 10A is a diagram illustrating a computer-readable recording medium in which instructions for executing each operation of the method for manufacturing the display module 110 are stored according to an embodiment; and Fig. 10B is a diagram illustrating a computer-readable recording medium in which instructions for executing each operation of the method for controlling the display module 110 are stored according to an embodiment.

[0153] As described above, the method for controlling the display module 110 may be implemented as a program and provided to the display device 100. The method for manufacturing the display module 110 as described above may be implemented as a program and provided to a device performing a manufacturing process of the display module 110 or a system including a plurality of devices.

[0154] A program including a method for controlling the display device 100 or a method for manufacturing the display module 110 may be stored and provided in a non-transitory computer-readable medium. A non-transitory computer-readable medium refers to a medium (such as a register, a cache, a memory, etc.) that stores data semi-permanently rather than for a short period of time, and can be read by a device. Specifically, the above-mentioned various applications or programs may be stored in a non-transitory computer-readable medium (e.g., a compact disk (CD), a digital versatile disk (DVD), a hard disk, a Blu-ray disk, a universal serial bus (USB), a memory card, a read-only memory (ROM), etc.), and may be provided.

[0155] like Fig. 10A As shown, the computer readable medium 1000 may include at least one instruction 1110 for controlling the operation of the display module 110. Fig. 10B As shown, the computer-readable medium 1000 may include at least one instruction 1120 for controlling a system for performing a manufacturing process of the display module 110 .

[0156] The computer-readable recording medium 1000 according to the embodiment may include instructions for controlling a system including a plurality of devices or a device for performing each step of forming the plurality of LEDs 111. In addition, the computer-readable recording medium 1000 may include instructions for controlling a manufacturing device or system for performing each step involved in the manufacturing process of the display module 110, including the step of forming the plurality of partition walls.

[0157] For example, the computer readable recording medium 1000 may include instructions for controlling an n-type semiconductor layer, a p-type semiconductor layer, and a metal organic chemical vapor deposition (MOCVD) device for growing a light emitting layer included in the LED light emitting device 111. By way of another example, the computer readable recording medium 1000 may include instructions for controlling a device for etching a growth substrate or etching a plurality of semiconductor layers.

[0158] According to various embodiments of the present disclosure as described above, since a plurality of partition walls are formed based on a growth substrate (e.g., silicon) of an LED device, the rigidity and / or strength of the partition walls are significantly improved compared to the partition walls formed of a photoresin in the prior art. Therefore, the stability of the weight load, external pressure, etc. that may be generated during the entire manufacturing process of the display module 110 can be expected. The display module 110 according to the embodiment includes a reflective layer formed on both sides of the partition wall, and therefore, the luminous efficiency can be improved. When the angle of the plurality of partition walls according to the present disclosure is adjusted to be less than 90 degrees (e.g., close to 45 degrees), the luminous efficiency can be further improved.

[0159] According to the embodiment, by forming a plurality of partition walls based on etching of a substrate to form an LED device, the process of forming the partition walls is significantly simplified compared to stacking using a related art photoresin, and thus, process costs may be saved.

[0160] According to the prior art, processes such as forming an LED device, performing photolithography, exposure, development, etc., and then forming a black matrix are required. Meanwhile, according to an embodiment, a plurality of partition walls can be formed by etching a substrate for forming an LED device and removing a portion of the substrate after forming the LED device.

[0161] Specifically, the presence of the reflective layer formed on the side of the partition wall changes the etching rate of the substrate removal process, thereby facilitating the formation of the partition wall because a plurality of partition walls and the reflective layer remain without a separate additional process.

[0162] According to an embodiment, the intervals between the plurality of LEDs on the display module 110 may not be determined entirely based on the transfer process, but may also be determined by performing an etching process on the substrate in consideration of the intervals between the plurality of LED elements. Taking this into account and the chip-level packaging process performed thereafter, the size of the device may also be minimized and the contrast ratio may be improved.

[0163] According to the embodiment, after etching of a substrate is performed in consideration of intervals between a plurality of LEDs and a process of forming an LED device and a chip-level packaging process are performed, the accuracy and efficiency of a transfer process performed thereafter may be significantly improved.

[0164] In summary, according to various embodiments, a display module 110 including a high-performance partition wall, a display device 100 , and an effective method for manufacturing the display module 110 including a high-performance partition wall may be provided.

[0165] The display module according to the present disclosure can be applied to be installed in wearable devices, portable devices, handheld devices, and various electronic products or electronic components that require a display as a single unit, or the display module according to the present disclosure can be applied to display devices such as personal computer (PC) monitors, high-resolution TVs, signs, and electronic displays through multiple assembly arrangements in a matrix form.

[0166] Each of the components (e.g., modules or programs) according to one or more embodiments may be composed of one or more objects, and some of the above subcomponents may be omitted, or other subcomponents may also be included in the embodiments. Alternatively or additionally, some components (e.g., modules or programs) may be integrated into one entity to perform the same or similar functions performed by each corresponding component before integration. In addition, various features from various different embodiments may be combined.

[0167] Depending on the embodiment, operations performed by a module, program or other component may be performed sequentially, in parallel, repeatedly or heuristically, or may be performed in a different order, at least some operations may be omitted, or other operations may be added.

[0168] While the present disclosure has been shown and described above with reference to various embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the present disclosure as defined at least in the appended claims and their equivalents.

Claims

1. A display module, comprising: Multiple light emitting diodes LED; Driver substrate; a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs; a plurality of partition walls configured to divide a light emitting area according to each of the plurality of LEDs; as well as a reflective layer formed on both sides of each of the plurality of partition walls, in: Each of the plurality of partition walls is a portion of a plurality of protrusions formed by etching a growth substrate to form the plurality of LEDs; and The plurality of protrusions are formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

2. The display module according to claim 1, wherein: Each of the plurality of partition walls is formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap with each other.

3. The display module according to claim 1, wherein: A width of each of the plurality of partition walls becomes narrower as the height increases toward an upper portion.

4. The display module according to claim 1, further comprising: Multiple pixels in matrix form, The plurality of pixels include a red R sub-pixel, a green G sub-pixel and a blue B sub-pixel, respectively, and The R sub-pixel, the G sub-pixel and the B sub-pixel respectively correspond to one LED device among the plurality of LEDs.

5. The display module according to claim 1, further comprising: a color conversion layer at the spaces between the plurality of partition walls, wherein the spaces between the plurality of partition walls are formed based on a plurality of recesses formed together with the plurality of protrusions on the growth substrate, and Wherein, the color conversion layer includes quantum dots QD or phosphors.

6. A method for manufacturing a display module, the method comprising: forming a plurality of light emitting diodes LEDs; as well as forming a plurality of partition walls that divide the light emitting area according to each of the plurality of LEDs, Wherein, forming the plurality of LEDs comprises: etching a growth substrate to form a plurality of LEDs, and forming a plurality of protrusions and a plurality of recesses on the growth substrate; and forming a reflective layer on surfaces of the plurality of protrusions and surfaces of the plurality of recesses, and The forming of the plurality of partition walls comprises: removing a portion of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and spaces between the plurality of partition walls are formed based on the plurality of recesses. The plurality of protrusions are formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

7. The method according to claim 6, wherein: Forming the plurality of LEDs further comprises: growing an n-type semiconductor layer in a horizontal direction on the reflective layer formed on the top surfaces of the plurality of protrusions; regrowing the n-type semiconductor layer grown along the horizontal direction; forming a light emitting layer and a p-type semiconductor layer on the regrown n-type semiconductor layer; forming a region for dividing each of the plurality of LEDs and a region for arranging an n-type electrode by etching the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer; and The n-type electrode electrically connected to the n-type semiconductor layer is formed on the region for arranging the n-type electrode, and the p-type electrode electrically connected to the p-type semiconductor is formed on the p-type semiconductor.

8. The method according to claim 6, wherein: Each of the plurality of partition walls is formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap with each other.

9. The method according to claim 6, wherein: A width of each of the plurality of partition walls becomes narrower as the height approaches an upper portion.

10. The method according to claim 6, wherein: Each of the plurality of partition walls includes silicon.

11. The method according to claim 6, wherein: The reflective layer includes at least one of aluminum Al and aluminum nitride AlN.

12. A display device, comprising: Multiple display modules; as well as a supporting plate configured to support the plurality of display modules, Wherein, each of the plurality of display modules comprises: Multiple light emitting diodes LED; Driver substrate; a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs; a plurality of partition walls configured to divide a light emitting area according to each of the plurality of LEDs; and a reflective layer formed on both sides of each of the plurality of partition walls, in: Each of the plurality of partition walls is a portion of a plurality of protrusions formed by etching a growth substrate to form the plurality of LEDs; and The plurality of protrusions are formed before forming a plurality of semiconductor layers included in the plurality of LEDs on the growth substrate.

13. The display device according to claim 12, wherein: The display module also includes a plurality of pixels in a matrix form, The plurality of pixels include a red R sub-pixel, a green G sub-pixel, and a blue B sub-pixel, respectively, and The R sub-pixel, the G sub-pixel, and the B sub-pixel each correspond to one LED device among the plurality of LEDs.

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