Image sensor and electronic device

Abstract

The disclosure provides an image sensor and an electronic device. An image sensor can include a first light sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third light sensing devices integrated in the semiconductor substrate and configured to sense light of a second wavelength spectrum and light of a third wavelength spectrum, respectively. The first light sensing device can overlap each of the second and third light sensing devices in a thickness direction of the semiconductor substrate. The second and third light sensing devices do not overlap in the thickness direction and each has an upper surface, a lower surface, and a doped region between the upper and lower surfaces. The third light sensing device includes an upper surface that is deeper than the upper surface of the second light sensing device from an upper surface of the semiconductor substrate and a doped region that is thicker than the doped region of the second light sensing device. The image sensor can omit the first light sensing device.

Description

Technical Field

[0001] The image sensor and electronic device were disclosed. Background Technology

[0002] Imaging devices (such as cameras) include those that capture images and store the images as electrical signals. An imaging device may include an image sensor that can separate incident light into separate components based on wavelength and convert each separate component into a separate electrical signal. Summary of the Invention

[0003] Some example implementations provide image sensors that can improve sensitivity and color separation characteristics while increasing reliability, simplifying processes, and reducing manufacturing costs.

[0004] Some example implementations provide electronic devices that include one or more of the image sensors.

[0005] According to some example embodiments, an image sensor may include a first photosensing device on a semiconductor substrate. The first photosensing device may be configured to sense light in a first wavelength spectrum associated with a first color. The image sensor may include a second photosensing device integrated in the semiconductor substrate. The second photosensing device may be configured to sense light in a second wavelength spectrum associated with a second color. The image sensor may include a third photosensing device integrated in the semiconductor substrate. The third photosensing device may be configured to sense light in a third wavelength spectrum associated with a third color. The first and second photosensing devices may overlap each other in a thickness direction of the semiconductor substrate, the thickness direction being perpendicular to the upper surface of the semiconductor substrate. The first and third photosensing devices may overlap each other in this thickness direction. The second and third photosensing devices may not overlap each other in this thickness direction. Each of the second and third photosensing devices may include an upper surface proximate to the upper surface of the semiconductor substrate, a lower surface facing the upper surface and distant from the upper surface of the semiconductor substrate, and a doped region between the upper and lower surfaces. The upper surface of the third photosensing device may be distant from the upper surface of the semiconductor substrate relative to the upper surface of the second photosensing device. The doped region of the third photosensitive device can be thicker than the doped region of the second photosensitive device in this thickness direction.

[0006] Image sensors may not include any color filters.

[0007] The image sensor may also include an insulating layer between the semiconductor substrate and the first photosensitive device.

[0008] The upper surface of the third photosensitive device can be further away from the upper surface of the semiconductor substrate by a distance equal to or greater than about 300 nm relative to the upper surface of the second photosensitive device.

[0009] The upper surface of the second photosensitive device may be located at a depth of approximately 0 nm to approximately 200 nm from the upper surface of the semiconductor substrate in the thickness direction.

[0010] The wavelength selectivity of the third wavelength spectrum of the third photosensitive device relative to the second wavelength spectrum can vary according to the depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction. The depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction can be a depth D3 that satisfies Equation 1:

[0011] [Relational Equation 1]

[0012] EQE(λ3)≥3×EQE(λ2)

[0013] In Equation 1, EQE(λ3) is the external quantum efficiency of the third photosensitive device at a wavelength (λ3) in the third wavelength spectrum, based on the depth D3 of the upper surface of the third photosensitive device in the semiconductor substrate. EQE(λ2) is the external quantum efficiency of the third photosensitive device at a wavelength (λ2) in the second wavelength spectrum, based on the depth D3 of the upper surface of the third photosensitive device in the semiconductor substrate.

[0014] The depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction can be from about 400 nm to about 1 μm.

[0015] The doped region of the third photosensitive device can be about 1.5 to about 5 times thicker than the doped region of the second photosensitive device in this thickness direction.

[0016] The external quantum efficiency of the third photosensitive device at a wavelength included in the third wavelength spectrum can vary depending on the thickness of the doped region of the third photosensitive device in that thickness direction. The thickness of the doped region of the third photosensitive device can satisfy Equation 2:

[0017] [Relational Equation 2]

[0018] 2.5 × EQE(T3) ≥ EQE(T2)

[0019] In Equation 2, EQE(T3) is the external quantum efficiency of the third photosensitive device at a wavelength in the third wavelength spectrum, based on the thickness of the doped region of the third photosensitive device in the thickness direction being thickness T3, and EQE(T2) is the external quantum efficiency of the second photosensitive device at a wavelength in the second wavelength spectrum, based on the thickness of the doped region of the second photosensitive device in the thickness direction being thickness T2, and T3>T2.

[0020] The thickness T3 can be greater than or equal to about 1 μm.

[0021] The thickness T2 can be from about 200 nm to about 800 nm.

[0022] Thickness T3 can be from about 1 μm to about 3 μm, and thickness T2 can be from about 300 nm to about 700 nm.

[0023] The external quantum efficiency of the second photosensitive device at a wavelength included in the second wavelength spectrum can be about 1.1 to about 2.5 times that of the external quantum efficiency of the third photosensitive device at a wavelength included in the third wavelength spectrum.

[0024] The difference between the external quantum efficiency of the image sensor at a wavelength in the first wavelength spectrum, the external quantum efficiency of the image sensor at a wavelength in the second wavelength spectrum, and the external quantum efficiency of the image sensor at a wavelength in the third wavelength spectrum can be less than or equal to about 50%.

[0025] The third wavelength spectrum can include wavelengths longer than the second wavelength spectrum.

[0026] The first color can be green, the second color can be blue, and the third color can be red.

[0027] The first photosensitive device may include a first electrode and a second electrode facing each other, and a photoelectric conversion layer between the first electrode and the second electrode.

[0028] The image sensor may also include an insulating layer between the semiconductor substrate and the first photosensitive device, and the first electrode is integrated in the insulating layer.

[0029] The first photosensitive device may further include a buffer layer between the first electrode and the photoelectric conversion layer and / or between the second electrode and the photoelectric conversion layer. The buffer layer may include lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof.

[0030] An electronic device may be used with the image sensor.

[0031] According to some example embodiments, an image sensor may include a first photosensing device integrated in a semiconductor substrate. The first photosensing device may be configured to sense light of an associated first wavelength spectrum. The image sensor may also include a second photosensing device integrated in the semiconductor substrate. The second photosensing device may be configured to sense light of a second wavelength spectrum. The first and second photosensing devices may not overlap each other in a thickness direction extending perpendicular to the upper surface of the semiconductor substrate, and may be spaced apart from each other in a surface direction extending parallel to the upper surface of the semiconductor substrate. Each of the first and second photosensing devices may include an upper surface proximate to the upper surface of the semiconductor substrate, a lower surface facing the upper surface and distant from the upper surface of the semiconductor substrate, and a doped region between the upper and lower surfaces. The second photosensing device may have at least one of the following: the upper surface of the second photosensing device is distant from the upper surface of the semiconductor substrate relative to the upper surface of the first photosensing device, and the doped region of the second photosensing device is thicker than the doped region of the first photosensing device in the thickness direction.

[0032] The image sensor may also include a third photosensing device on a semiconductor substrate. The third photosensing device may be configured to sense light of a third wavelength spectrum. The third photosensing device may overlap with at least one of the first and second photosensing devices in the thickness direction.

[0033] The third photosensitive device may overlap with the first photosensitive device in the thickness direction. The third photosensitive device may overlap with the second photosensitive device in the thickness direction.

[0034] The image sensor may further include a fourth photosensing device on a semiconductor substrate. The fourth photosensing device may be configured to sense light of a fourth wavelength spectrum. The fourth photosensing device may overlap with a third photosensing device in the surface direction. The third photosensing device may overlap with a first photosensing device in the thickness direction and may not overlap with a second photosensing device in the thickness direction. The fourth photosensing device may overlap with the second photosensing device in the thickness direction and may not overlap with the first photosensing device in the thickness direction.

[0035] The first photosensitive device and the second photosensitive device may overlap each other at least partially in the surface direction, such that the lower surface of the first photosensitive device is equidistant from or far from the upper surface of the semiconductor substrate relative to the upper surface of the second photosensitive device.

[0036] The first and second photosensitive devices can be non-overlapping in the surface direction, such that the lower surface of the first photosensitive device is close to the upper surface of the semiconductor substrate relative to the upper surface of the second photosensitive device.

[0037] Image sensors may not include any color filters.

[0038] An electronic device may include the image sensor.

[0039] The process of image sensor manufacturing can be simplified, manufacturing costs can be reduced, while sensitivity and color separation characteristics can be improved and reliability can be increased. Attached Figure Description

[0040] Figure 1 This is a top plan view illustrating an example of a stacked structure of an image sensor according to some exemplary embodiments.

[0041] Figure 2 It shows the setting Figure 1 A top plan view of an example of a light-sensing device at the top of a stacked structure of image sensors.

[0042] Figure 3 This is a plan view illustrating an example arrangement of a photosensitive device integrated in a semiconductor substrate, the semiconductor substrate being disposed on... Figure 1 At the bottom of the stacked structure of the image sensor.

[0043] Figure 4A It is shown Figure 1 A schematic cross-sectional view of an example image sensor.

[0044] Figure 4B It is shown Figure 1 A schematic cross-sectional view of an example image sensor, and

[0045] Figure 5 This is a schematic diagram illustrating an electronic device according to some example embodiments. Detailed Implementation

[0046] In the following, exemplary embodiments are described in detail to enable those skilled in the art to readily implement them. However, practical applications can be implemented in various different forms, and are not limited to the exemplary embodiments described herein.

[0047] In the accompanying drawings, for clarity, the thicknesses of layers, films, panels, regions, etc., are exaggerated. It will be understood that when an element such as a layer, film, region, or substrate is referred to as "on" another element, it can be directly on said other element, or there may be intervening elements. Conversely, when an element is referred to as "directly on" another element, there are no intervening elements. Furthermore, when an element is referred to as "on" another element, the element can be above or below said other element.

[0048] In the accompanying drawings, parts unrelated to the description are omitted for clarity, and throughout the specification, the same or similar components are indicated by the same reference numerals.

[0049] In the following text, the terms "lower part" and "upper part" are used for descriptive convenience and do not restrict the positional relationship.

[0050] In the following text, the upper part of the image sensor is described as the light-receiving side, but this is for the sake of convenience and does not restrict the positional relationship.

[0051] When used herein, unless otherwise defined, “substituted” means that the hydrogen atom of a compound is replaced by a substitute selected from: halogen atom, hydroxyl, alkoxy, nitro, cyano, amino, azide, amido, hydrazine, hydrazine, carbonyl, carbamoyl, thiol, ester, carboxyl or a salt thereof, sulfonic acid or a salt thereof, phosphate or a salt thereof, silyl, C1 to C20 alkyl, C2 to C20 alkenyl, C2 to C20 alkynyl, C6 to C30 aryl, C7 to C30 alkylaryl, C1 to C30 alkoxy, C1 to C20 heteroalkyl, C3 to C20 heteroaryl, C3 to C20 heteroarylalkyl, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C15 cycloalkynyl, C3 to C30 heterocycloalkyl, and combinations thereof.

[0052] In the following text, unless otherwise defined, “hybrid” means containing one or four heteroatoms selected from N, O, S, Se, Te, Si and P.

[0053] In the following text, "combination" refers to a mixture or stacked structure of two or more types.

[0054] In the following text, unless otherwise defined, an energy level is either the highest occupied molecular orbital (HOMO) level or the lowest unoccupied molecular orbital (LUMO) level.

[0055] In the following text, unless otherwise defined, the work function or energy level is expressed as an absolute value from the vacuum level. Similarly, a deep, high, or large work function or energy level indicates a large absolute value relative to the vacuum level of 0 eV, while a shallow, low, or small work function or energy level indicates a small absolute value relative to the vacuum level of 0 eV.

[0056] It will be understood that an element and / or its properties (e.g., structure, surface, orientation, etc.) (which may be referred to as "perpendicular", "parallel", "coplanar", etc.) with respect to other elements and / or its properties (e.g., structure, surface, orientation, etc.) may be "perpendicular", "parallel", "coplanar", etc. with respect to other elements and / or its properties, or may be "substantially perpendicular", "substantially parallel", "substantially coplanar" respectively with respect to other elements and / or its properties.

[0057] A component and / or its characteristics that are “substantially perpendicular” to other components and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “perpendicular” within manufacturing and / or material tolerances, and / or having a deviation of equal to or less than 10% (e.g., ±10% tolerance) from “perpendicular” in terms of size and / or angle.

[0058] Components and / or their properties that are “substantially parallel” to other components and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “parallel” to other components and / or their properties within manufacturing and / or material tolerances, and / or having deviations from “parallel” in size and / or angle by an amount equal to or less than 10% (e.g., ±10% tolerance) from “parallel”.

[0059] Components and / or their properties that are “substantially coplanar” with respect to other components and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “coplanar” with respect to other components and / or their properties within manufacturing and / or material tolerances, and / or having deviations from “coplanar” in size and / or angle from other components and / or their properties by an amount equal to or less than 10% (e.g., ±10% tolerance).

[0060] It will be understood that a component and / or its characteristics may be stated herein as “identical” or “equal” to other components, and it will be further understood that a component and / or its characteristics stated herein as “identical” or “equal” to other components may be “identical” or “equal” to said other components and / or its characteristics, or “identical” or “equal” to said other components and / or its characteristics on the substrate. A component and / or its characteristics that are “substantially identical” or “substantially equal” to other components and / or its characteristics will be understood to include components and / or its properties that are identical or equal to other components and / or its characteristics within manufacturing tolerances and / or material tolerances. Components and / or its characteristics that are identical or substantially identical to other components and / or its characteristics may be structurally identical or substantially identical, functionally identical or substantially identical, and / or compositionally identical or substantially identical.

[0061] It will be understood that elements and / or their characteristics described herein as "substantially" identical cover elements and / or their characteristics that have a relative difference in size equal to or less than 10%. Furthermore, regardless of whether an element and / or its characteristics are modified to "substantially," it will be understood that these elements and / or their characteristics should be interpreted as including manufacturing or operational tolerances (e.g., ±10%) near the element and / or its characteristics.

[0062] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, they are intended to include a tolerance of ±10% around the stated value. When a range is specified, the range includes all values ​​within it, such as increments of 0.1%.

[0063] The image sensor according to some example implementations is described below.

[0064] Figure 1 This is a top plan view illustrating an example of a stacked structure of an image sensor according to some exemplary embodiments. Figure 2 It shows the setting Figure 1 A top plan view of an example of a light-sensing device at the top of a stacked structure of image sensors. Figure 3 This is a plan view illustrating an example arrangement of a photosensitive device integrated in a semiconductor substrate, wherein the semiconductor substrate is... Figure 1 At the bottom of the stacked structure of the image sensor. Figure 4A It is shown Figure 1 A schematic cross-sectional view of an example image sensor. Figure 4B It is shown Figure 1 A schematic cross-sectional view of an example image sensor.

[0065] Reference Figures 1 to 4B According to some example embodiments, the image sensor 300 is a stacked image sensor in which a first light sensing device 100 and a semiconductor substrate 200 are stacked relative to each other.

[0066] The first photosensing device 100 may be a photoelectric conversion device configured to absorb light in a specific (or optionally, predetermined) wavelength spectrum and photoelectrically convert the absorbed light into an electrical signal. Such absorption and photoelectric conversion of the absorbed light may be referred to herein as “sensing” the light; therefore, it will be understood that the first photosensing device 100 may be configured to sense light in a specific wavelength spectrum. The first photosensing device 100 may be disposed on the side where light is incident, i.e., the entire surface of the light-receiving surface, and may be configured to selectively absorb light of a first wavelength spectrum (e.g., light in the first wavelength spectrum) to perform photoelectric conversion. This first wavelength spectrum may include the wavelength spectrum of a first color, also referred to herein as the wavelength spectrum associated with the first color. Therefore, the first photosensing device 100 may be configured to sense (e.g., selectively sense) light of a first wavelength spectrum (e.g., the wavelength spectrum of the first color). The wavelength spectrum of the first color may be a wavelength spectrum that is part of the visible spectrum, but the exemplary embodiments are not limited thereto. Any description of the wavelength spectrum of the first color herein may be applied interchangeably to the first wavelength spectrum. The light in the wavelength spectrum of the first color may be one of the three primary colors. In some example embodiments, the light in the wavelength spectrum of the first color is light in the blue wavelength spectrum (hereinafter referred to as "blue light"), light in the green wavelength spectrum (hereinafter referred to as "green light"), or light in the red wavelength spectrum (hereinafter referred to as "red light"). In some example embodiments, the light in the wavelength spectrum of the first color can be green light or red light. In some example embodiments, the light in the wavelength spectrum of the first color can be green light. In some example embodiments, the first photosensitive device 100 can be configured to selectively absorb and photoelectrically convert (e.g., "sensor") light of the first wavelength spectrum, which can be the visible wavelength spectrum (e.g., the wavelength spectrum of the first color, also referred to as the first visible wavelength spectrum, such as blue light, green light, red light, or any combination thereof), the non-visible wavelength spectrum (e.g., the infrared wavelength spectrum and / or the ultraviolet wavelength spectrum), or any combination thereof.

[0067] Here, the selective absorption of blue, green, or red light refers to each maximum absorption wavelength (λ) in the absorption spectrum. max The absorption spectrum exists in the range of about 380 nm and less than 500 nm, about 500 nm and about 600 nm, or about 600 nm and less than or equal to about 700 nm, and the absorption spectrum in the corresponding wavelength spectrum is significantly higher than the absorption spectrum in other wavelength spectra. Here, "significantly higher than" means that, in some example embodiments, about 70% to about 100%, about 75% to about 100%, about 80% to about 100%, about 85% to about 100%, about 90% to about 100%, or about 95% to about 100% of the entire region of the absorption spectrum belongs to the corresponding wavelength spectrum.

[0068] The first photosensitive device 100 includes a lower electrode 131 and an upper electrode 132 facing each other, a photoelectric conversion layer 133 between the lower electrode 131 and the upper electrode 132, and (optionally) buffer layers 134 and 135 (e.g., one or both of the buffer layers 134 and 135 may be omitted from the first photosensitive device 100).

[0069] One of the lower electrode 131 and the upper electrode 132 is an anode, and the other is a cathode. In some example embodiments, the lower electrode 131 may be an anode, and the upper electrode 132 may be a cathode. In some example embodiments, the lower electrode 131 may be a cathode, and the upper electrode 132 may be an anode. Either the lower electrode 131 or the upper electrode 132 may be referred to herein as the first electrode, and the other of the lower electrode 131 or the upper electrode 132 may be referred to herein as the second electrode.

[0070] The lower electrode 131 and the upper electrode 132 can each be a transparent electrode. This transparent electrode can have a transmittance greater than or equal to about 80%, for example, greater than or equal to about 85%, greater than or equal to about 88%, or greater than or equal to about 90%. The transparent electrode can include at least one of an oxide conductor, a carbon conductor, and a metal thin film. In some example embodiments, the oxide conductor can include at least one selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO); the carbon conductor can be at least one selected from graphene and carbon nanoparticles; and the metal thin film can be an ultrathin film including aluminum (Al), magnesium (Mg), silver (Ag), gold (Au), alloys thereof, or combinations thereof. The upper electrode 132 can be a light-receiving electrode.

[0071] The photoelectric conversion layer 133 can be configured to selectively absorb light of a first color wavelength spectrum (e.g., light in a first wavelength spectrum associated with the first color) and convert the absorbed light into an electrical signal (e.g., to selectively sense the light), the first color wavelength spectrum being a portion of the visible spectrum. The photoelectric conversion layer 133 can also be configured to transmit light other than the first color wavelength spectrum (e.g., selectively transmitting absorbed light that is not in the first color wavelength spectrum). In some example embodiments, the first color wavelength spectrum can be blue, green, or red light. In some example embodiments, the first color wavelength spectrum can be green or red light. In some example embodiments, the first color wavelength spectrum can be green light.

[0072] In the photoelectric conversion layer 133, at least one p-type semiconductor and at least one n-type semiconductor can form a pn junction, and excitons can be generated after receiving light (e.g., light of the wavelength spectrum of a first color) from the outside. The generated excitons can be separated into holes and electrons.

[0073] Each of the p-type and n-type semiconductors can be a light-absorbing material, and in some example embodiments, at least one of the p-type and n-type semiconductors can be an organic light-absorbing material. In some example embodiments, at least one of the p-type and n-type semiconductors can be a wavelength-selective light-absorbing material configured to selectively absorb light of a first color wavelength spectrum. In some example embodiments, at least one of the p-type and n-type semiconductors can be a wavelength-selective organic light-absorbing material. The p-type and n-type semiconductors can have peak absorption wavelengths (λ) in the same or different wavelength spectra. max ).

[0074] In some example embodiments, at least one of the p-type semiconductor and the n-type semiconductor may have a maximum absorption wavelength (λ) in a wavelength spectrum from about 500 nm to about 600 nm. max The green light absorbing material, in some example embodiments, may have a maximum absorption wavelength (λ) in a wavelength spectrum from about 520 nm to about 580 nm. max (Green light absorbing material)

[0075] In some example embodiments, at least one of the p-type semiconductor and the n-type semiconductor may have a maximum absorption wavelength (λ) in a wavelength spectrum from about 500 nm to about 600 nm. max Organic green light-absorbing materials, in some example embodiments, may have a maximum absorption wavelength (λ) in a wavelength spectrum from about 520 nm to about 580 nm. max Organic green light absorbing materials.

[0076] In some example embodiments, the p-type semiconductor may be a semiconductor having a maximum absorption wavelength (λ) in a wavelength spectrum from about 500 nm to about 600 nm. max Organic green light-absorbing materials, in some example embodiments, may have a maximum absorption wavelength (λ) in a wavelength spectrum from about 520 nm to about 580 nm. max Organic green light absorbing materials.

[0077] In some example embodiments, the HOMO level of the p-type semiconductor can be from about 5.0 eV to about 6.0 eV, and within that range, from about 5.1 eV to about 5.9 eV, from about 5.2 eV to about 5.8 eV, or from about 5.3 eV to about 5.8 eV. In some example embodiments, the LUMO level of the p-type semiconductor can be from about 2.7 eV to about 4.3 eV, and within that range, from about 2.8 eV to about 4.1 eV, or from about 3.0 eV to about 4.0 eV. In some example embodiments, the band gap of the p-type semiconductor can be from about 1.7 eV to about 2.3 eV, and within that range, from about 1.8 eV to about 2.2 eV, or from about 1.9 eV to about 2.1 eV.

[0078] In some example implementations, the p-type semiconductor can be an organic material having a core structure comprising an electron-donating portion (EDM), a π-conjugated link portion (LM), and an electron-receiving portion (EMA).

[0079] In some example implementations, a p-type semiconductor may be represented by the chemical formula A, but is not limited thereto.

[0080] [Chemical Formula A]

[0081] EDM-LM-EAM

[0082] In chemical formula A,

[0083] EDM can be an electronic power supply section.

[0084] EAM can be the electron-receiving part, and

[0085] LM can be a π-conjugated linker that links the electron-donating part to the electron-receiving part.

[0086] In some example implementations, a p-type semiconductor represented by chemical formula A can be represented by chemical formula A-1.

[0087] [Chemical Formula A-1]

[0088]

[0089] In chemical formula A-1,

[0090] X can be O, S, Se, Te, SO, SO2, or SiR. a R b ,

[0091] Ar can be a substituted or unsubstituted C6 to C30 arylene, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more of the above.

[0092] Ar 1aand Ar 2a It can be independently a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof.

[0093] R 1a To R 3a R a and R b It can independently be hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C1 to C30 alkoxy, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, halogen, cyano, or combinations thereof, and

[0094] R 1a To R 3a And Ar 1a and Ar 2a It can exist independently, or two adjacent groups can combine with each other to form a fused ring.

[0095] In some example implementations, in chemical formula A-1, Ar 1a and Ar 2aIt can be independently a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted cinnolinyl group, or a substituted or unsubstituted quinazolinyl group. One of the following groups: phthalazinyl group (substituted or unsubstituted), benzotriazinyl group (substituted or unsubstituted), pyridopyrazinyl group (substituted or unsubstituted), pyridopyrimidinyl group (substituted or unsubstituted), and pyridopyridazinyl group (substituted or unsubstituted).

[0096] In some example implementations, Ar of chemical formula A-1 1a and Ar 2a They can be linked together to form a loop, or in some example implementations, Ar 1a and Ar 2a It can be done via single key, -(CR) g R h ) n2 -(n² is 1 or 2), -O-, -S-, -Se-, -N=, -NR i -、-SiR j R k -and-GeR l R m - One of them links with another to form a loop. Here, R g To R mIt may independently be hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, substituted or unsubstituted C1 to C6 alkoxy, halogen, cyano, or a combination thereof.

[0097] In some example implementations, R of chemical formula A-1 1a and Ar 1a They can be fused together to form a ring. In some example implementations, R 1a and Ar 1a It can be done via single key, -(CR) g R h ) n2 -(n² is 1 or 2), -O-, -S-, -Se-, -N=, -NR i -、-SiR j R k -and-GeR l R m - One of them links with another to form a loop. Here, R g To R m Same as described above.

[0098] In some example implementations, a p-type semiconductor represented by chemical formula A-1 can be represented by one of chemical formulas A-2 to A-7.

[0099]

[0100] In chemical formulas A-2 to A-7,

[0101] X and R 1a To R 3a As described above,

[0102] Ar 3 It can be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more of the above.

[0103] G can be a single bond, -(CR) g R h ) n2 -(n² is 1 or 2), -O-, -S-, -Se-, -N=, -NR i -、-SiR j R k -and-GeR l R m - one of which R g To R mIt can independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, R g and R h R j and R k and R l and R m They can exist independently or be linked together to form a ring.

[0104] Y 2 It can be O, S, Se, Te, or C(R) q (CN)(where R) q It is hydrogen, cyano (-CN) or C1 to C10 alkyl),

[0105] R 6a To R 6d R 7 R 7a To R 7d R 16 R 17 R g and R h It may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, and

[0106] R 1a To R 3a R 6a To R 6d R 7 and R 7a To R 7d It can exist independently, or two adjacent groups can link together to form a fused ring.

[0107] In some example embodiments, Ar of chemical formulas A-2, A-4, and / or A-6 3 It can be benzene, naphthylene, anthracene, thiophene, selenophene, tellurene, pyridine, pyrimidine, or two or more of the above fused rings.

[0108] In some example implementations, the n-type semiconductor can be an organic material, an inorganic material, or an organic / inorganic material.

[0109] In some example implementations, the LUMO level of the n-type semiconductor can be from about 3.6 eV to about 4.8 eV, and within that range, from about 3.8 eV to about 4.6 eV, or from about 3.9 eV to about 4.5 eV.

[0110] In some example implementations, the n-type semiconductor may be thiophene or a thiophene derivative, fullerene or a fullerene derivative, but is not limited thereto.

[0111] The photoelectric conversion layer 133 may be an intrinsic layer (I layer) in which p-type semiconductors and n-type semiconductors are mixed in a bulk heterojunction. Here, the p-type semiconductors and n-type semiconductors may be mixed in a volume ratio (thickness ratio) of about 1:9 to about 9:1, and within this range, in some example embodiments, they may be mixed in a volume ratio (thickness ratio) of about 2:8 to about 8:2, a volume ratio (thickness ratio) of about 3:7 to about 7:3, a volume ratio (thickness ratio) of about 4:6 to about 6:4, or a volume ratio (thickness ratio) of about 5:5.

[0112] The photoelectric conversion layer 133 may include a double layer comprising a p-type layer including the aforementioned p-type semiconductor and an n-type layer including the aforementioned n-type semiconductor. Here, the thickness ratio of the p-type layer to the n-type layer may be from about 1:9 to about 9:1, for example, from about 2:8 to about 8:2, from about 3:7 to about 7:3, from about 4:6 to about 6:4, or about 5:5.

[0113] In addition to the intrinsic layer, the photoelectric conversion layer 133 may also include a p-type layer and / or an n-type layer. The p-type layer may include the aforementioned p-type semiconductor, and the n-type layer may include the aforementioned n-type semiconductor. In some example embodiments, the photoelectric conversion layer 133 may include various combinations of p-type layer / I-layer, I-layer / n-type layer, p-type layer / I-layer / n-type layer, etc.

[0114] The photoelectric conversion layer 133 can be formed over the entire surface of the first photosensitive device 100. Therefore, light of the wavelength spectrum of the first color can be selectively absorbed from the front surface of the first photosensitive device 100, and the light absorption area can be increased to provide high light absorption efficiency.

[0115] The photoelectric conversion layer 133 can have a thickness of about 1 nm to about 500 nm, within which range, about 5 nm to about 300 nm. When the photoelectric conversion layer 133 has a thickness within this range, the active layer (e.g., the photoelectric conversion layer 133) can be configured to effectively absorb light, effectively separate holes from electrons, and transfer holes and electrons, thereby effectively improving the photoelectric conversion efficiency.

[0116] Buffer layers 134 and 135 may be located between the lower electrode 131 and the photoelectric conversion layer 133 and / or between the upper electrode 132 and the photoelectric conversion layer 133.

[0117] Buffer layers 134 and 135 may independently be a hole transport layer, a hole injection layer, a hole extraction layer, an electron blocking layer, an electron transport layer, an electron injection layer, an electron extraction layer, a hole blocking layer, or a combination thereof.

[0118] In some example embodiments, buffer layers 134 and 135 can be configured to effectively transfer or extract a first charge (e.g., a hole or an electron) and a second charge (e.g., an electron or a hole) separated from the photoelectric conversion layer 133 to the lower electrode 131 and the upper electrode 132, respectively, when an external voltage is applied, while preventing the second charge from being reverse-injected or transferred from the lower electrode 131 to the photoelectric conversion layer 133 or preventing the first charge from being reverse-injected or transferred from the upper electrode 132 to the photoelectric conversion layer 133. Therefore, by improving the photoelectric conversion efficiency of the first photosensing device 100 and simultaneously effectively reducing dark current and residual charge carriers, the electrical characteristics of the first photosensing device 100 can be improved.

[0119] One of the buffer layers 134 and 135 can be an organic buffer layer.

[0120] In some example implementations, the organic buffer layer may be a compound represented by the chemical formula B-1 or B-2.

[0121] [Chemical Formula B-1]

[0122]

[0123] [Chemical formula B-2]

[0124]

[0125] In chemical formulas B-1 or B-2,

[0126] M 1 and M 2 It can be CR independently. n R o SiR p R q NR r ,O,S,Se or Te,

[0127] Ar 1b Ar 2b Ar 3b and Ar 4b It can be independently a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof.

[0128] G 2 and G 3 It can be used independently as a single bond, -(CR) g Rh ) n3 -, -O-, -S-, -Se-, -N=, -NR u -、-SiR v R w -or-GeR x R y -, where n3 is 1 or 2, and

[0129] R 30 To R 37 and R n To R y It can be hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heterocyclic, substituted or unsubstituted C1 to C6 alkoxy, halogen or cyano, independently.

[0130] In some example embodiments, the compound represented by chemical formula B-1 or B-2 may be a compound represented by chemical formula B-3 or B-4.

[0131] [Chemical Formula B-3]

[0132]

[0133] [Chemical Formula B-4]

[0134]

[0135] In chemical formulas B-3 or B-4

[0136] M 1 M 2 G 2 G 3 R 30 To R 37 As described above,

[0137] R 38 To R 45 It can be hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, substituted or unsubstituted C1 to C6 alkoxy, halogen or cyano, independently.

[0138] In some example embodiments, the compound represented by chemical formula B-3 or B-4 may be a compound represented by chemical formula B-5 or B-6.

[0139] [Chemical Formula B-5]

[0140]

[0141] [Chemical Formula B-6]

[0142]

[0143] In chemical formulas B-5 or B-6, R 38 To R 45 and R o and R n Same as described above.

[0144] In some example embodiments, the organic buffer layer may comprise a low-molecular-weight organic semiconductor or polymer semiconductor, or a combination thereof, having a high charge carrier mobility, such that the charge mobility of the organic buffer layer is higher than that of the photoelectric conversion layer 133. In some example embodiments, the charge carrier mobility of the organic buffer layer may be about 50 times or more than the charge carrier mobility of the photoelectric conversion layer 133, and within this range, may be about 70 times or more, about 80 times or more, about 100 times or more, about 120 times or more, about 150 times or more, about 200 times or more, about 300 times or more, about 500 times or more, about 800 times or more, or about 1000 times or more than the charge carrier mobility of the photoelectric conversion layer 133. In some example embodiments, the charge carrier mobility of the organic buffer layer may be greater than or equal to about 1.0 × 10⁻⁶. -3 cm 2 / Vs, and within this range, in some example implementations, greater than or equal to about 1.2 × 10 -3 cm 2 / Vs, greater than or equal to approximately 1.5 × 10 -3 cm 2 / Vs, greater than or equal to approximately 1.8 × 10 -3 cm 2 / Vs, greater than or equal to approximately 2.0 × 10 -3 cm 2 / Vs, greater than or equal to approximately 3.0 × 10 -3 cm 2 / Vs, greater than or equal to approximately 4.0 × 10 -3 cm 2 / Vs, or greater than or equal to approximately 5.0 × 10 - 3 cm 2 / Vs. In some example implementations, the charge carrier mobility of the organic buffer layer can be approximately 1.0 × 10⁻⁶. -3 cm 2 / Vs approximately 10cm 2 / Vs, and within that range, for example, approximately 1.2 × 10 -3 cm 2 / Vs approximately 10cm 2 / Vs, approximately 1.5×10 -3 cm 2 / Vs approximately 10cm 2 / Vs, approximately 1.8×10 -3 cm 2 / Vs approximately 10cm 2 / Vs, approximately 2.0×10 -3 cm 2 / Vs approximately 10cm 2 / Vs, approximately 3.0×10 -3 cm 2 / Vs approximately 10cm 2 / Vs, approximately 4.0×10 -3 cm 2 / Vs approximately 10cm 2 / Vs, or approximately 5.0×10 -3 cm 2 / Vs approximately 10cm 2 / Vs.

[0145] In some example embodiments, the organic buffer layer may include a low molecular weight organic semiconductor having an average molecular weight of less than or equal to about 3000. In some example embodiments, the organic buffer layer may include aromatic compounds and / or heteroaromatic compounds, including fused polycyclic aromatic compounds, fused polycyclic heteroaromatic compounds, or combinations thereof. In some example embodiments, it may include fused polycyclic aromatic compounds (such as pentacene) and / or fused polycyclic heteroaromatic compounds containing at least one of O, S, Se, Te, N, and combinations thereof (such as fused polycyclic heteroaromatic compounds containing at least one of O, S, Se, Te, and combinations thereof). In some example embodiments, the organic buffer layer may include fused polycyclic aromatic compounds and / or fused polycyclic heteroaromatic compounds having a compact, flat structure in which four or more rings are fused together, such as fused polycyclic aromatic compounds and / or fused polycyclic heteroaromatic compounds in which 5, 6, 7, 8, 9, 10, 11, or 12 rings are fused. In some example embodiments, the organic buffer layer may include a fused polycyclic aromatic compound and / or a fused polycyclic heteroaromatic compound comprising at least one benzene ring. In some example embodiments, the organic buffer layer may be a fused polycyclic heteroaromatic compound comprising at least one of thiophene, selenophene, and / or tellurene.

[0146] In some example implementations, the organic buffer layer may include a compound containing a carbazole moiety, and in some example implementations, a compound containing at least three carbazole moieties.

[0147] In some example implementations, the organic buffer layer may include a compound represented by the chemical formula C.

[0148] [Chemical formula C]

[0149]

[0150] In chemical formula C,

[0151] L 1 To L 3 It can be independently a substituted or unsubstituted C6 to C20 arylene group.

[0152] R 1 To R 7 It can be independently hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C1 to C30 alkoxy, substituted or unsubstituted C6 to C20 aryl, substituted or unsubstituted C3 to C20 heteroaryl, substituted or unsubstituted carbazole, halogen, cyano, or combinations thereof.

[0153] R 1 To R 3 At least two of them may include substituted or unsubstituted carbazole groups, and

[0154] m1 to m3 can be 0 or 1 independently.

[0155] In some example implementations, the organic buffer layer may include a compound represented by one of the chemical formulas C-1 to C-3.

[0156] [Chemical formula C-1]

[0157]

[0158] [Chemical formula C-2]

[0159]

[0160] [Chemical formula C-3]

[0161]

[0162] In chemical formulas C-1 to C-3,

[0163] L 1 To L 3 R 1 R 4 To R 7 And m1 to m3 are the same as described above.

[0164] R 8 To R 17It may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazole group, a halogen, a cyano group, or a combination thereof, and

[0165] m1 to m3 can be 0 or 1 independently.

[0166] In some example implementations, the organic buffer layer may include a compound represented by one of the chemical formulas C-4 to C-7.

[0167] [Chemical formula C-4]

[0168]

[0169]

[0170] [Chemical formula C-7]

[0171]

[0172] In chemical formulas C-4 to C-7

[0173] L 1 To L 3 It can be a phenyl group independently.

[0174] m1 to m3 can be independently 0 or 1, and

[0175] R 1 To R 3 It can be a carbazolyl or a phenyl-substituted carbazolyl group independently.

[0176] In some example implementations, the organic buffer layer may include a compound represented by the chemical formula C-8 or C-9.

[0177]

[0178] In chemical formulas C-8 or C-9, R 8 and R 12 It can be hydrogen or phenyl independently.

[0179] One of the buffer layers 134 and 135 may be an inorganic buffer layer. In some example embodiments, the inorganic buffer layer may include lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof. In some example embodiments, the lanthanides may include ytterbium (Yb). The inorganic buffer layer may have a thickness of less than or equal to about 5 nm, and within this range, in some example embodiments, it may have a thickness of about 1 nm to about 5 nm, about 1 nm to about 4 nm, about 1 nm to about 3 nm, or about 1 nm to about 2 nm.

[0180] One of the buffer layers 134 and 135 can be an organic / inorganic buffer layer.

[0181] One or both of buffer layers 134 and 135 may be omitted.

[0182] An anti-reflective layer (not shown) may be further included on the first photosensing device 100. The anti-reflective layer may be disposed on the light incident side (e.g., away from the semiconductor substrate 200 relative to the first photosensing device 100) and reduce the reflectivity of incident light, thereby further improving light absorption. The anti-reflective layer may include, for example, a material having a refractive index of about 1.6 to about 2.5, and may include at least one of, for example, metal oxides, metal sulfides, and organic materials having a refractive index within this range. The anti-reflective layer may include, for example, metal oxides such as aluminum oxides, molybdenum oxides, tungsten oxides, vanadium oxides, rhenium oxides, niobium oxides, tantalum oxides, titanium oxides, nickel oxides, copper oxides, cobalt oxides, manganese oxides, chromium oxides, tellurium oxides, or combinations thereof; metal sulfides such as zinc sulfides; and / or organic materials such as amine derivatives, but not limited thereto.

[0183] In the first photosensitive device 100, excitons can be generated when light passes through the upper electrode 132 and the photoelectric conversion layer 133 absorbs light having a wavelength spectrum of a first color (or alternatively, light of the wavelength spectrum of the first color). The excitons can be separated into holes and electrons in the photoelectric conversion layer 133. The separated holes can be transported to the anode, which is one of the lower electrode 131 and the upper electrode 132, and the separated electrons can be transported to the cathode, which is the other of the lower electrode 131 and the upper electrode 132, thereby allowing current to flow. The separated electrons and / or holes can be collected in the charge storage device 250.

[0184] In some example embodiments, the semiconductor substrate 200 may be a silicon substrate, and a second photosensor 210, a third photosensor 220, a charge storage device 250, and a transport transistor (not shown) are integrated therein. As mentioned herein, an element “integrated” in another element can be interchangeably referred to as “embedded” in said other element and can be understood as being partially or completely located within the volume space defined by the outermost surface of said other element, such that the element is partially or completely covered by said other element. For example, as... Figures 4A-4B As shown, the first photosensitive device 210 and the second photosensitive device 220 are both located within the volume space defined by the outer surface (including the upper surface 200s) of the semiconductor substrate 200, and are therefore integrated into the semiconductor substrate 200.

[0185] The second photosensitive device 210 or the third photosensitive device 220 can be disposed in each pixel PX of the image sensor 300, and the pixels PX including the second photosensitive device 210 and the pixels PX including the third photosensitive device 220 can be alternately arranged along columns and / or rows (e.g., the x-direction and / or the y-direction). In this way, since the second photosensitive device 210 and the third photosensitive device 220 are alternately arranged in directions parallel to the upper surface 200s of the semiconductor substrate 200 (e.g., the x-direction and / or the y-direction), the second photosensitive device 210 and the third photosensitive device 220 do not overlap each other along the thickness direction of the semiconductor substrate 200. Figures 4A-4B As shown, the second photosensitive device 210 and the third photosensitive device 220 may be spaced apart from each other in a surface direction (e.g., the x-direction and / or y-direction) extending parallel to the upper surface 200s of the semiconductor substrate 200. As mentioned herein, the direction extending parallel to the upper surface 200s of the semiconductor substrate 200 (e.g., the x-direction and / or y-direction) may be referred to as the surface direction, and the direction extending perpendicular to the upper surface 200s of the semiconductor substrate 200 (e.g., the z-direction) may be referred to as the thickness direction.

[0186] The second photosensitive device 210 and the third photosensitive device 220 may overlap with the first photosensitive device 100 along the thickness direction (e.g., the z-direction) of the semiconductor substrate 200. Specifically, as... Figures 1-4A As shown, the first light sensing device 100 may extend over both the adjacent second light sensing device 210 and the third light sensing device 220 in at least a portion of the image sensor 300 (e.g., overlapping with both the adjacent second light sensing device 210 and the third light sensing device 220 in the thickness direction).

[0187] The second photosensitive device 210 and the third photosensitive device 220 can each be a photodiode (e.g., a silicon-based photodiode) having a specific (or optionally, predetermined) thickness inside the semiconductor substrate 200. In some example embodiments, the second photosensor 210 may have: an upper surface 210p close to (e.g., near) the upper surface 200s of the semiconductor substrate 200 (wherein the upper surface 200s of the semiconductor substrate 200 is close to or near the second photosensor 210); a lower surface 210q facing the upper surface 210p and away from the upper surface 200s relative to the upper surface 210p; and a doped region 210d between the upper surface 210p and the lower surface 210q. The third photosensor 220 may have: an upper surface 220p close to (e.g., near) the upper surface 200s of the semiconductor substrate 200; a lower surface 220q facing the upper surface 220p and away from the upper surface 200s relative to the upper surface 220p; and a doped region 220d between the upper surface 220p and the lower surface 220q. It will be understood that the upper surface 200s of the semiconductor substrate 200 may be interchangeably referred to herein as the surface of the semiconductor substrate 200.

[0188] The doped region 210d of the second photosensitive device 210 and the doped region 220d of the third photosensitive device 220 can each be a conductive region. In some example embodiments, the doped region 210d of the second photosensitive device 210 and the doped region 220d of the third photosensitive device 220 can be doped with an n-type dopant or a p-type dopant at a high concentration. In some example embodiments, the n-type dopant can be phosphorus (P), arsenic (As), antimony (Sb), and / or bismuth (Bi), and in some example embodiments, the p-type dopant can be boron (B), aluminum (Al), and / or gallium (Ga), but is not limited thereto. The doping concentration of the n-type or p-type dopant can be greater than or equal to about 1 × 10⁻⁶ in some example embodiments. 14 / cm 2 In some example implementations, it is greater than or equal to about 5 × 10 14 / cm 2 Or greater than or equal to approximately 1 × 10 16 / cm 2 However, it is not limited to this.

[0189] The second photosensitive device 210 and the third photosensitive device 220 can each be configured to sense light in different wavelength spectra by utilizing the difference between the penetration depths, which depend on the wavelength of the light entering the semiconductor substrate 200. Therefore, high color separation characteristics can be obtained without color separation means such as color filters.

[0190] In some example embodiments, the second photosensing device 210 may be configured to sense light passing through the first photosensing device 100, i.e., light of a second wavelength spectrum (e.g., light in the second wavelength spectrum), which may be the wavelength spectrum of a second color in the visible spectrum other than the wavelength spectrum of the first color (e.g., the wavelength spectrum associated with the second color) (e.g., the second wavelength spectrum may partially or completely exclude the first wavelength spectrum). The third photosensing device 220 may be configured to sense light passing through the first photosensing device 100, i.e., light of a third wavelength spectrum (e.g., light in the third wavelength spectrum), which may be the wavelength spectrum of a third color in the visible spectrum other than the wavelength spectrum of the first color (e.g., the wavelength spectrum associated with the third color) (e.g., the third wavelength spectrum may partially or completely exclude the first wavelength spectrum). Any description of the wavelength spectrum of the second color herein may be applied interchangeably to the second wavelength spectrum. Any description of the wavelength spectrum of the third color herein may be applied interchangeably to the third wavelength spectrum. The light of the second color wavelength spectrum and the light of the third color wavelength spectrum can each be one of the three primary colors of light, and the first color, the second color, and the third color can each be light with a different wavelength spectrum. In some example embodiments, the second color light and the third color light can be blue light, green light, or red light, respectively; in some example embodiments, they are blue light or red light, respectively. In some example embodiments, the second color light can be blue light, and the third color light can be red light.

[0191] As mentioned herein, the first, second, and third wavelength spectra of light can be different wavelength spectra that may partially overlap or not overlap at all. One or more of the first, second, and third wavelength spectra may include or may be the visible wavelength spectrum of light. For example, the first wavelength spectrum may be a first visible wavelength spectrum associated with green light, the second wavelength spectrum may be a second visible wavelength spectrum associated with blue light, and the third wavelength spectrum may be a third visible wavelength spectrum associated with red light. However, it will be understood that in some exemplary embodiments, one or more (or all) of the first, second, and third wavelength spectra may include or may be the invisible wavelength spectrum of light. For example, in some exemplary embodiments, the first wavelength spectrum of light may include or may be the infrared wavelength spectrum, the ultraviolet wavelength spectrum, or some combination thereof with at least a portion of the visible wavelength spectrum, while the second and third wavelength spectra of light may include or may be the visible wavelength spectrum (e.g., blue light, red light, and / or green light).

[0192] In some example embodiments, the third photosensor 220 may be disposed deeper from the surface 200s of the semiconductor substrate 200 (e.g., farther from the surface 200s of the semiconductor substrate 200) than the second photosensor 210. Therefore, the third photosensor 220 may be configured to sense light with a longer wavelength spectrum than the second photosensor 210. In some example embodiments, the third wavelength spectrum (e.g., the wavelength spectrum of a third color) sensed in the third photosensor 220 may be a longer wavelength spectrum than the second wavelength spectrum (e.g., the wavelength spectrum of a second color) sensed in the second photosensor 210. In some example embodiments, the third color wavelength spectrum may be a red wavelength spectrum, and the second color wavelength spectrum may be a blue or green wavelength spectrum. In some example embodiments, the third color wavelength spectrum may be a green wavelength spectrum, and the second color wavelength spectrum may be a blue wavelength spectrum. In some example embodiments, the first color wavelength spectrum may be a green wavelength spectrum, the second color wavelength spectrum may be a blue wavelength spectrum, and the third color wavelength spectrum may be a red wavelength spectrum.

[0193] In some example embodiments, the depth D3 from the upper surface 200s of the semiconductor substrate 200 to the upper surface 220p of the third photosensitive device 220 may be about 300 nm deeper or greater than the depth D2 from the upper surface 200s of the semiconductor substrate 200 to the upper surface 210p of the second photosensitive device 210. Reiterating, the upper surface 220p of the third photosensitive device 220 may be further away from the upper surface 200s of the semiconductor substrate 200 relative to the upper surface 210p of the second photosensitive device 210, for example, by a distance equal to or greater than about 300 nm. In some example embodiments, the depth D2 of the upper surface 210p of the second photosensitive device 210 from the upper surface 200s of the semiconductor substrate 200 (e.g., the depth D2 of the upper surface 210p) may be about 0 nm to about 200 nm, and the depth D3 of the upper surface 220p of the third photosensitive device 220 may be about 300 nm to about 1 μm. In some example embodiments, the upper surface 210p of the second photosensitive device 210 may be substantially the same as the upper surface 200s of the semiconductor substrate 200 (e.g., the depth D2 may be substantially zero, such that the upper surface 210p may be at least partially coplanar with the upper surface 200s), but the depth D3 of the upper surface 220p of the third photosensitive device 220 may be from about 400 nm to about 1 μm or from about 400 nm to about 800 nm from the upper surface 200s of the semiconductor substrate 200.

[0194] In some example embodiments, the depth D3 of the third photosensitive device 220 can affect the wavelength selectivity of the third photosensitive device 220. In some example embodiments, the depth D3 of the third photosensitive device 220 can be selected by taking into account the wavelength selectivity of the third color of the third photosensitive device 220 relative to the second color. To restate, the wavelength selectivity of the third wavelength spectrum of the third photosensitive device 220 relative to the second wavelength spectrum can vary depending on the depth of the upper surface 220p of the third photosensitive device 220 from the upper surface 200s of the semiconductor substrate 200 in the thickness direction. Here, wavelength selectivity can be verified, for example, by the ratio of the external quantum efficiency (EQE) at a wavelength belonging to the third color wavelength spectrum to the external quantum efficiency at a wavelength belonging to the second color wavelength spectrum.

[0195] In some example implementations, the depth D3 of the third photosensitive device 220 can be selected to satisfy relational equation 1.

[0196] [Relational Equation 1]

[0197] EQE(λ3)≥3×EQE(λ2)

[0198] In relational equation 1,

[0199] EQE(λ3) is the external quantum efficiency of the third photosensitive device at a wavelength (λ3) belonging to the wavelength spectrum of the third color when the depth of the upper surface of the third photosensitive device (e.g., the distance from the upper surface of the third photosensitive device to the upper surface of the semiconductor substrate in the thickness direction) is D3, and

[0200] EQE(λ2) is the external quantum efficiency of the third photosensitive device at a wavelength (λ2) belonging to the wavelength spectrum of the second color when the depth of the upper surface of the third photosensitive device is D3.

[0201] The depth D3 of the third photosensitive device 220 satisfies relational equation 1, thus increasing the sensitivity of the wavelength spectrum of the third color in the third photosensitive device 220, but suppressing the sensitivity of the wavelength spectrum of the second color. Therefore, the color separation characteristics of the wavelength spectrum of the third color can be improved without causing mixing of the wavelength spectrum sensed in the third photosensitive device 220. Thus, crosstalk in the image sensor can be reduced or prevented.

[0202] In some example implementations, the depth D3 of the third photosensitive device 220 can be selected to satisfy relational equation 1A.

[0203] [Relational Equation 1A]

[0204] EQE(λ3)≥5×EQE(λ2)

[0205] In some example implementations, the depth D3 of the third photosensitive device 220 can be selected to satisfy relational equation 1B.

[0206] [Relational Equation 1B]

[0207] EQE(λ3)≥7×EQE(λ2)

[0208] In some example implementations, the depth D3 of the third photosensitive device 220 can be selected to satisfy relational equation 1C.

[0209] [Relational Equation 1C]

[0210] EQE(λ3)≥10×EQE(λ2)

[0211] In some example embodiments, the third photosensor 220 may be thicker than the second photosensor 210 (e.g., in the thickness direction). In some example embodiments, the thickness T3 of the doped region 220d of the third photosensor 220 may be greater than or equal to about 1.5 times the thickness T2 of the doped region 210d of the second photosensor 210. In some example embodiments, within this range, it is about 1.5 times to about 5 times, about 1.5 times to about 4 times, or about 1.5 times to about 3 times the thickness T2 of the doped region 210d of the second photosensor 210.

[0212] The thickness T2 of the doped region 210d in the second photosensitive device 210 and the thickness T3 of the doped region 220d in the third photosensitive device 220 can respectively affect the electrical characteristics of the image sensor 300 in the wavelength spectrum of the second color and the wavelength spectrum of the third color, and thus can be configured to balance the electrical characteristics in the wavelength spectrum of the second color and the wavelength spectrum of the third color. For example, the external quantum efficiency of the third photosensitive device 220 at a wavelength included in the third wavelength spectrum can vary based on the thickness of the doped region 220d of the third photosensitive device 220 in the thickness direction. Here, the electrical characteristics can be, for example, the external quantum efficiency (EQE).

[0213] In some example implementations, the thickness of the doped region 220d of the third photosensitive device 220 can be selected to satisfy relational equation 2.

[0214] [Relational Equation 2]

[0215] 2.5 × EQE(T3) ≥ EQE(T2)

[0216] In relational equation 2,

[0217] EQE(T3) is the external quantum efficiency of the third photosensitive element at a wavelength belonging to the wavelength spectrum of the third color (e.g., included in the wavelength spectrum of the third color) when the thickness of the doped region of the third photosensitive element (e.g., the third photosensitive device 220) is T3.

[0218] EQE(T2) is the external quantum efficiency of the second photosensitive element at a wavelength belonging to the second color's wavelength spectrum when the thickness of the doped region of the second photosensitive element (e.g., the second photosensitive device 210) is T2.

[0219] T3>T2.

[0220] In some example implementations, the thickness of the doped region of the third photosensitive device 220 can be selected to satisfy relational equation 2A.

[0221] [Relational Equation 2A]

[0222] 2×EQE(T3)≥EQE(T2)

[0223] In some example implementations, the thickness of the doped region of the third photosensitive device 220 can be selected to satisfy relational equation 2B.

[0224] [Relational Equation 2B]

[0225] 1.5 × EQE(T3) ≥ EQE(T2)

[0226] In some example embodiments, the thickness T3 of the doped region 220d of the third photosensitive device 220 can be greater than or equal to about 1 μm, and within this range, is about 1 μm to about 3 μm, about 1 μm to about 2.5 μm, about 1 μm to about 2 μm, about 1.2 μm to about 3 μm, about 1.2 μm to about 2.5 μm, and about 1.2 μm to about 2 μm.

[0227] In some example embodiments, the thickness T2 of the doped region 210d of the second photosensitive device 210 may be less than or equal to about 800 nm, and within that range, it is about 200 nm to about 800 nm, about 300 nm to about 700 nm, or about 400 nm to about 600 nm.

[0228] When the thickness is within this range, the electrical properties in the wavelength spectrum of the second color sensed in the second photosensitive device 210 and the wavelength spectrum of the third color sensed in the third photosensitive device 220 can be effectively balanced, thereby improving the performance of the image sensor.

[0229] The second photosensitive device 210 and the third photosensitive device 220 can be configured to sense (e.g., absorb and / or photoelectrically convert) light of a second color wavelength spectrum and light of a third color wavelength spectrum, respectively, and the sensed information can be transmitted by a transfer transistor. A charge storage device 250 is electrically connected to the first photosensitive device 100, and the information from the charge storage device 250 can be transmitted by a transfer transistor.

[0230] Metal lines (not shown) and pads (not shown) are formed below or above the second photosensor 210, the third photosensor 220, and the charge storage device 250. The metal lines and pads may be made of metals with low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof in some example embodiments, in order to reduce signal delay, but are not limited thereto.

[0231] Insulating layers 60 and 80 are formed between the first photosensitive device 100 and the semiconductor substrate 200. In some example embodiments, insulating layer 60 may contact the semiconductor substrate 200, and insulating layer 80 may contact the first photosensitive device 100. In some example embodiments, the lower electrode 131 of the first photosensitive device 100 may be internally embedded in insulating layer 80 (e.g., integrated in insulating layer 80). When insulating layer 80 is omitted, the lower electrode 131 of the first photosensitive device 100 may be internally embedded in insulating layer 60 (e.g., integrated in insulating layer 60). In some example embodiments, the upper surface 210p of the second photosensitive device 210 may contact insulating layer 60.

[0232] Insulating layers 60 and 80 may each be independently made of an inorganic insulating material (such as silicon oxide and / or silicon nitride) or a low dielectric constant (low k) material (such as SiC, SiCOH, SiCO, and SiOF) (e.g., each may at least partially comprise the inorganic insulating material or the low dielectric constant material). Insulating layers 60 and 80 may have trenches 85 exposing the charge storage 250. Trenches 85 may be filled with a filler. Either insulating layer 60 or 80 may be omitted. For example, insulating layer 80 may be omitted, and insulating layer 60 may be in contact with both the semiconductor substrate 200 and the first photosensing device 100.

[0233] The image sensor 300 may also include a focusing lens 190. The focusing lens 190 may be disposed on the first photosensing device 100 and may control the direction of incident light to collect light at a single point. In some example embodiments, the focusing lens 190 may not be disposed between the first photosensing device 100 and the semiconductor substrate 200. In some example embodiments, the focusing lens 190 may be cylindrical or hemispherical, but is not limited thereto. The focusing lens 190 may be arranged for each pixel PX, or may be arranged over multiple pixels PX.

[0234] like Figures 1-4B As shown, each pixel PX can be defined as a separate portion of the image sensor 300, including photosensing devices 210 and / or 220 integrated in the semiconductor substrate 200, and may also include some or all of the portions of the image sensor 300 that overlap with the photosensing devices 210 and / or 220 in the thickness direction (e.g., a portion of the first photosensing device 100). (For example, some or all of the portions of the image sensor 300 that overlap with a single photosensing device 210 can be considered to be included in a single pixel PX at least partially defined by that single photosensing device 210). In some example embodiments, a pixel PX is considered to be part of the image sensor 300, including at least one second photosensing device 210, at least one third photosensing device 220, and some or all of the portions of the image sensor 300 that overlap with the at least one second photosensing device 210 and the at least one third photosensing device 220 in the thickness direction. For example, Figures 4A-4B The portion of the image sensor 300 shown (instead of two distinct pixels as shown) may each be a single pixel, which in Figure 4A It includes light sensing devices 100, 210, and 220 and Figure 4B This includes photosensitive devices 100A, 100B, 210, and 220.

[0235] The image sensor 300 according to some example embodiments includes a second light sensing device 210 and a third light sensing device 220 by utilizing the difference in penetration depth depending on the wavelength of light, but does not include a separate color separation means such as a color filter.

[0236] Therefore, the processes for forming color separation mechanisms such as color filters can be omitted, thus simplifying the manufacturing process and reducing manufacturing costs. Furthermore, contamination caused by organic materials escaping from the color filters during the process and / or operation can be prevented, thereby preventing performance degradation of the image sensor.

[0237] Furthermore, transmittance loss due to color separation means such as color filters can be prevented, thus improving the sensitivity of the image sensor. In particular, the sensitivity of the wavelength spectrum of the second color (e.g., blue light) can be greatly improved. In some example embodiments, the external quantum efficiency of the image sensor 300 according to the aforementioned structure at a wavelength belonging to the wavelength spectrum of the second color (e.g., blue wavelength spectrum) can be about 5% or more, about 7% or more, or about 10% or more higher than that of an image sensor with a structure employing color filters.

[0238] Because the wavelength spectrum of the second color has higher sensitivity, the external quantum efficiency of the second photosensitive device 210 at a wavelength belonging to the wavelength spectrum of the second color can be higher than that of the third photosensitive device 220 at a wavelength belonging to the wavelength spectrum of the third color. In some example embodiments, it is greater than or equal to about 1.1 times, greater than or equal to about 1.2 times, greater than or equal to about 1.5 times, greater than or equal to about 1.8 times, or greater than or equal to about 2 times the external quantum efficiency of the third photosensitive device 220. Within this range, the external quantum efficiency of the second photosensitive device 210 at a wavelength belonging to the wavelength spectrum of the second color can be about 1.1 to about 3 times, about 1.2 to about 3 times, about 1.5 to about 3 times, about 1.8 to about 3 times, about 2 to about 3 times, about 1.1 to about 2.5 times, about 1.2 to about 2.5 times, about 1.5 to about 2.5 times, about 1.8 to about 2.5 times, or about 2 to about 2.5 times that of the third photosensitive device 220 at a wavelength belonging to the wavelength spectrum of the third color.

[0239] In some example embodiments, since the external quantum efficiency of the wavelength spectrum of the second color (e.g., the blue wavelength spectrum) is improved, the external quantum efficiency of other spectra besides the second color wavelength spectrum (in some example embodiments, the wavelength spectrum of the third color (e.g., the red wavelength spectrum)) also needs to be balanced with the external quantum efficiency of the wavelength spectrum of the second color. Therefore, the difference between the external quantum efficiency of the wavelength spectrum of the second color of the second photosensitive device 210 and the external quantum efficiency of the wavelength spectrum of the third color of the third photosensitive device 220 can be adjusted to be less than or equal to about 50%. Thus, the difference in external quantum efficiency between the wavelength spectra of the second color of the second photosensitive device 210 and the wavelength spectrum of the third color of the third photosensitive device 220 can be about 10% to about 50%, about 12% to about 50%, about 15% to about 50%, about 18% to about 50%, or about 20% to about 50%. Such a balance between external quantum efficiencies can be adjusted by the depth D3 and thickness T3 of the third photosensitive device 220.

[0240] In some example embodiments, the difference between the external quantum efficiency of the image sensor 300 at a wavelength belonging to the wavelength spectrum of the first color, the external quantum efficiency at a wavelength belonging to the wavelength spectrum of the second color, and the external quantum efficiency at a wavelength belonging to the wavelength spectrum of the third color may be less than or equal to about 50%, about 10% to about 50%, about 12% to about 50%, about 15% to about 50%, about 18% to about 50%, or about 20% to about 50%, respectively.

[0241] For the image sensor 300 according to some example embodiments, the second photosensitive device 210 and the third photosensitive device 220 disposed in the semiconductor substrate 200 do not overlap with each other in the thickness direction (e.g., the z direction) of the semiconductor substrate 200. Therefore, the mixing of the wavelength spectrum of the second color and the wavelength spectrum of the third color can be prevented, thereby reducing or preventing their crosstalk.

[0242] like Figures 1-4B As shown, the image sensor 300 may not include any color filter. However, the example implementation is not limited to this, and in some example implementations, the image sensor 300 may include a color filter that overlaps with at least one of the light sensing devices 100, 100A, 100B, 210, 220 in the thickness direction (e.g., the z-direction).

[0243] like Figures 4A-4BAs shown, in some example embodiments, the second photosensitive device 210 and the third photosensitive device 220 may at least partially overlap each other in the surface direction (e.g., the x direction and / or the y direction), such that the lower surface 210q of the second photosensitive device 210 is equidistant from or away from the upper surface 200s of the semiconductor substrate 200 relative to the upper surface 220p of the third photosensitive device 220 (e.g., D2+T2≥D3).

[0244] like Figures 4A-4B As shown, the upper surface 220p of the third photosensitive device 220 is farther away from the upper surface 200s of the semiconductor substrate 200 relative to the upper surface 210p of the second photosensitive device 210 (for example, the upper surface 220p of the third photosensitive device 220 is deeper in the semiconductor substrate 200 than the upper surface 210p of the second photosensitive device 210 is from the upper surface 200s), and the doped region 220d of the third photosensitive device 220 is thicker than the doped region 210d of the second photosensitive device 210 in the thickness direction (e.g., the z-direction) (e.g., T3>T2). However, the exemplary embodiments are not limited thereto, and in some exemplary embodiments, the third photosensing device 220 may have at least one of the following: the upper surface 220p of the third photosensing device 220 is farther away from the upper surface 200s of the semiconductor substrate 200 relative to the upper surface 210p of the second photosensing device 210; and the doped region 220d of the third photosensing device 220 is thicker than the doped region 210d of the second photosensing device 210 in the thickness direction. For example, in some exemplary embodiments, T3>T2 but D2=D3. In another example, in some exemplary embodiments, D3>D2 but T2=T3.

[0245] In some example embodiments, the second photosensitive device 210 and the third photosensitive device 220 do not overlap each other in the surface direction (e.g., the x direction and / or the y direction), such that the lower surface 210q of the second photosensitive device 210 is close to the upper surface 200s of the semiconductor substrate 200 relative to the upper surface 220p of the third photosensitive device 220 (e.g., D2+T2<D3).

[0246] Special reference Figure 4B (It may be implemented according to some example implementations) Figures 1-3(A cross-sectional view of the image sensor 300 shown in the figure) The first photosensitive device 100 may include a plurality of separate photosensitive devices 100A and 100B, which may overlap with corresponding photosensitive devices in the second photosensitive device 210 and the third photosensitive device 220 in the thickness direction (e.g., the z direction), wherein the separate photosensitive devices 100A and 100B overlap in the surface direction (e.g., the x direction and / or the y direction) and may include separate multilayers and / or may include separate portions of one or more layers extending continuously between the separate photosensitive devices 100A and 100B (e.g., it is a monolithic material having separate portions located in the separate photosensitive devices 100A and / or 100B).

[0247] like Figure 4B As shown, the photosensitive device 100A may include a lower electrode 131A and an upper electrode 132A facing each other, a photoelectric conversion layer 133A between the lower electrode 131A and the upper electrode 132A, and (optionally) buffer layers 134A and 135A, while the photosensitive device 100B may include a lower electrode 131B and an upper electrode 132B facing each other, a photoelectric conversion layer 133B between the lower electrode 131B and the upper electrode 132B, and (optionally) buffer layers 134B and 135B.

[0248] exist Figure 4B In the example embodiments shown, photoelectric conversion layers 133A and 133B are distinct layers (e.g., not monolithic materials) that may be in direct contact with or spaced apart from each other in the surface direction and may be made of different materials (e.g., different material compositions) and thus can be configured to absorb and photoelectrically convert (e.g., sense) different wavelength spectra of light, which may be any one and / or any combination of the wavelength spectra of light described herein. However, the example embodiments are not limited thereto, and in some example embodiments, photoelectric conversion layers 133A and 133B are distinct portions of a monolithic continuous photoelectric conversion layer 133 extending between photosensing devices 100A and 100B.

[0249] exist Figure 4B In the example embodiment shown, upper electrodes 132A and 132B are distinct portions of a monolithic continuous upper electrode 132 extending between photosensitive devices 100A and 100B. However, the example embodiment is not limited to this, and in some example embodiments, upper electrodes 132A and 132B are distinct layers (e.g., not monolithic materials) that may be in direct contact with each other or spaced apart in this surface direction and that may be made of different materials (e.g., different material compositions).

[0250] exist Figure 4BIn the example embodiments shown, the lower electrodes 131A and 131B are distinct layers (e.g., not monolithic materials) that may be in direct contact with each other or spaced apart in that surface direction and may be made of different materials (e.g., different material compositions). However, the example embodiments are not limited to this, and in some example embodiments, the lower electrodes 131A and 131B are distinct portions of a monolithic continuous lower electrode 131 extending between the photosensitive devices 100A and 100B.

[0251] exist Figure 4B In the example embodiment shown, buffer layers 134A and 134B are distinct portions of a monolithic, continuous buffer layer 134 extending between photosensitive devices 100A and 100B. However, the example embodiment is not limited to this, and in some example embodiments, buffer layers 134A and 134B are distinct layers (e.g., not monolithic materials), which may be in direct contact with each other or spaced apart in this surface direction, and they may be made of different materials (e.g., different material compositions).

[0252] exist Figure 4B In the example embodiment shown, buffer layers 135A and 135B are distinct portions of a monolithic, continuous buffer layer 135 extending between photosensitive devices 100A and 100B. However, the example embodiment is not limited to this, and in some example embodiments, buffer layers 135A and 135B are distinct layers (e.g., not monolithic materials), which may be in direct contact with each other or spaced apart in this surface direction, and they may be made of different materials (e.g., different material compositions).

[0253] Still refer to Figure 4B The photosensitive devices 100A and 100B can each be configured to sense light of a different wavelength spectrum. For example, in an example embodiment where photosensitive device 100A is configured to sense light of a first wavelength spectrum, photosensitive device 210 is configured to sense light of a second wavelength spectrum, photosensitive device 220 is configured to sense light of a third wavelength spectrum, and photosensitive device 100B is configured to sense light of a fourth wavelength spectrum, the first to fourth wavelength spectra can be different from each other (and one or more of them can at least partially overlap each other or not at least partially overlap each other). One or more of the first to fourth wavelength spectra can be a visible wavelength spectrum (e.g., associated with red, blue, and / or green light), an invisible wavelength spectrum (e.g., associated with infrared and / or ultraviolet light), or any combination thereof.

[0254] like Figure 4BAs shown, photosensitive devices 100A and 100B may each overlap with a corresponding one of photosensitive devices 210 and 220 in the thickness direction (e.g., the z-direction). Therefore, in some example embodiments, one or more photosensitive devices 210 of the image sensor 300 may overlap with one of photosensitive devices 100A and 100B in the thickness direction (e.g., as shown in the diagram). Figure 4B The light sensing device 100A shown overlaps with the light sensing device 220 of the image sensor 300 in this thickness direction (e.g., as shown). Figure 4B The photosensitive device 100B shown is overlapped.

[0255] In some example implementations, light sensing devices 100A and 100B may each overlap with a corresponding set of light sensing devices 210 and 220 of image sensor 300 (e.g., a corresponding set of pixels PX of image sensor 300) in the thickness direction (e.g., the z-direction). For example, light sensing device 100A may overlap with light sensing devices 210 and 220 of a first set of pixels PX of image sensor 300 in the thickness direction, and light sensing device 100B may overlap with light sensing devices 210 and 220 of a different second set of pixels PX of image sensor 300 in the thickness direction.

[0256] although Figures 1-4BAn example embodiment of an image sensor 300 is shown (the image sensor 300 includes a first photosensitive device 100 and / or photosensitive devices 100A, 100B that overlap with the second photosensitive device 210 and the third photosensitive device 220 in the thickness direction on the semiconductor substrate 200). However, it will be understood that in some example embodiments, the image sensor 300 may not include any first photosensitive device 100 and / or any photosensitive device 100A, 100B that overlaps with some or all of the second photosensitive device 210 and the third photosensitive device 220. For example, in some example embodiments, the image sensor 300 may not include any photosensitive devices 100, 100A, 100B that overlap with any photosensitive devices 210, 220 of the image sensor 300. In another example, in some example implementations, image sensor 300 may include one or more light sensing devices 100, 100A and / or 100B that overlap with the second light sensing devices 210 and the third light sensing devices 220 of the first group of pixels PX, but image sensor 300 does not further include any light sensing devices 100, 100A, 100B that overlap with another group of light sensing devices 210, 220 that are distinct from image sensor 300. In another example, in some exemplary implementations, the image sensor 300 may include one or more photosensitive devices 100, 100A, and / or 100B that overlap with one or more second photosensitive devices 210 and third photosensitive devices 220 of one or more pixels PX or all pixels PX, but the image sensor 300 further excludes any photosensitive device 100, 100A, 100B that overlaps with another of the second photosensitive devices 210 and third photosensitive devices 220 of one or more pixels PX or all pixels PX (e.g., the image sensor 300 includes a first photosensitive device 100 that overlaps with a second photosensitive device 210 of some pixels PX or all pixels PX, but excludes any photosensitive device that overlaps with a third photosensitive device 220 of some pixels PX or all pixels PX).

[0257] The aforementioned image sensor can be applied to various electronic devices, including video devices, and in some example embodiments, it can be applied to mobile phones, cameras, portable video cameras, biometers and / or automotive electronic components, but is not limited thereto.

[0258] Figure 5 These are schematic diagrams of electronic devices according to some example embodiments.

[0259] Reference Figure 5The electronic device 1700 may include a processor 1720, a memory 1730, and an image sensor 1740 electrically connected together via a bus 1710. The image sensor 1740 may be any image sensor according to any example implementation. The memory 1730 (which may be a non-transitory computer-readable medium) may store instruction programs. The processor 1720 may execute the stored instruction programs to perform one or more functions. In some example implementations, the processor 1720 may be configured to process electrical signals generated by the image sensor 1740. The processor 1720 may be configured to generate output (e.g., an image to be displayed on a display interface) based on such processing.

[0260] Electronic device 1700 and / or any part thereof (including, but not limited to, processor 1720, memory 1730, and image sensor 1740) may include one or more instances of a processing circuitry system, may be included in, and / or may be implemented by, one or more instances of a processing circuitry system, such as: hardware including logic circuitry; hardware / software combination (such as a processor executing software); or a combination thereof. For example, the processing circuitry system may more specifically include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a graphics processing unit (GPU), an application processor (AP), a digital signal processor (DSP), a microcomputer, a field-programmable gate array (FPGA) and programmable logic units, a microprocessor, an application-specific integrated circuit (ASIC), a neural network processing unit (NPU), an electronic control unit (ECU), an image signal processor (ISP), etc. In some example implementations, the processing circuitry may include: a non-transitory computer-readable storage device (e.g., memory 1730) storing instruction programs, such as a solid-state drive (SSD); and a processor (e.g., processor 1720) configured to execute the instruction programs to implement some or all of the functions and / or methods performed by the electronic device 1700.

[0261] Some exemplary implementations are described in more detail below with reference to the following examples. However, the scope of the inventive concept is not limited to the following examples.

[0262] Manufacturing of the first optical sensing device

[0263] Example 1

[0264] ITO (work function (WF): 4.9 eV) was sputtered onto a glass substrate to form a 150 nm thick anode. Subsequently, a compound represented by chemical formula A was deposited on this anode to form a 5 nm thick lower buffer layer. Then, a p-type semiconductor (λ) represented by chemical formula B, with a volume ratio (thickness ratio) of 1:1, was... maxA 100 nm thick photoelectric conversion layer is formed by co-depositing a 555 nm thick Yb and an n-type semiconductor fullerene (C60) on a lower buffer layer. Then, a 1.5 nm thick upper buffer layer is formed by thermally depositing Yb on the photoelectric conversion layer. Next, ITO is sputtered onto the upper buffer layer to form a 7 nm thick cathode. Then, aluminum oxide (Al2O3) is deposited on the cathode to form a 50 nm thick anti-reflection layer, which is then sealed with a glass plate to fabricate a first photosensor configured to selectively absorb green light and perform photoelectric conversion on the absorbed light.

[0265] [Chemical Formula A]

[0266]

[0267] [Chemical Formula B]

[0268]

[0269] Image sensor design I

[0270] The image sensor employing the first light-sensing device according to Example 1 is designed to have Figures 1 to 4A The structure of the image sensor and the variation of its external quantum efficiency, which depends on the thickness T3 of the third photosensitive device, were evaluated.

[0271] According to Fresnel equations, light absorption is calculated using the refractive index (n), extinction coefficient (k), and layer geometry of each layer, and external quantum efficiency (EQE) is calculated using the light absorption and internal quantum efficiency of organic optoelectronic devices, as well as the light absorption of Si photodiodes.

[0272] The results are shown in Table 1.

[0273] Table 1

[0274]

[0275] *Depth (D2 and D3): Depth from the top surface of the semiconductor substrate

[0276] Referring to Table 1, it was confirmed that the external quantum efficiency changes with the thickness of the third photosensitive device (red photodiode). Specifically, the thicker the third photosensitive device (red photodiode), the higher the external quantum efficiency in the red wavelength spectrum.

[0277] Image Sensor Design II

[0278] The image sensor employing the first light-sensing device according to Example 1 is designed to have Figures 1 to 4AThe structure of the third photosensitive device was evaluated, and the external quantum efficiency of the third photosensitive device in each wavelength range, depending on the depth D3 of the third photosensitive device, was assessed.

[0279] The results are shown in Table 2.

[0280] Table 2

[0281]

[0282] *Depth (D2 and D3): Depth from the top surface of the semiconductor substrate

[0283] Referring to Table 2, it was confirmed that the wavelength selectivity of the image sensor can vary depending on the depth of the third photosensitive device (red photodiode) from the semiconductor substrate. Specifically, as the depth of the third photosensitive device (red photodiode) from the upper surface of the semiconductor substrate increases, the wavelength selectivity of the red wavelength spectrum relative to the blue wavelength spectrum is improved.

[0284] Image Sensor Design III

[0285] The image sensor (Example 2) employing the first photosensitive device described above is designed to have Figures 1 to 4A The structure of the image sensor (comparative example) is described, and the image sensor is manufactured by equally changing the depth and thickness of the second and third photosensitive devices in the image sensor of example 2 and further having a blue filter / red filter, the efficiency of which is evaluated with respect to each wavelength spectrum.

[0286] The results are shown in Table 3.

[0287] Table 3

[0288]

[0289] *D2 = 0 nm, T2 = 500 nm, D3 = 500 nm and T3 = 2 μm

[0290] Referring to Table 3, compared with the image sensor using a color filter according to the comparative example, the image sensor without a color filter according to Example 2 exhibits improved blue light sensitivity.

[0291] Image Sensor Design IV

[0292] The image sensor (Example 2) employing the first light-sensing device is designed to have Figures 1 to 4A The structure of the image sensor (comparative example) is described, and the image sensor is manufactured by equally changing the depth and thickness of the second and third photosensitive devices in the image sensor of example 2 and further having a blue filter / red filter, which are evaluated with respect to leakage current.

[0293] Leakage current is achieved by applying a 3V bias voltage while keeping the image sensor at 60°C, and then converting the saturated dark current into electrons / μm. 2 / s is used for evaluation.

[0294] The results are shown in Table 4.

[0295] Table 4

[0296] <![CDATA[Dark current (electrons / μm 2 / s)]]> Example 2 -1 Comparative example 20

[0297] Referring to Table 4, compared with the image sensor using a color filter according to the comparative example, the image sensor without a color filter according to Example 2 exhibits extremely low dark current, thus ensuring reliability.

[0298] Although the inventive concept has been described in conjunction with exemplary embodiments currently considered feasible, it will be understood that the inventive concept is not limited to the disclosed exemplary embodiments. Rather, the inventive concept is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0299] This application claims priority and benefit to Korean Patent Application No. 10-2020-0012101, filed on January 31, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

Claims

1. An image sensor, comprising: A first photosensing device on a semiconductor substrate, the first photosensing device being configured to sense light in a first wavelength spectrum associated with a first color. A second photosensing device integrated in the semiconductor substrate, the second photosensing device being configured to sense light in a second wavelength spectrum associated with a second color, and A third photosensing device integrated in the semiconductor substrate, the third photosensing device being configured to sense light in a third wavelength spectrum associated with a third color. The first photosensitive device and the second photosensitive device overlap each other in the thickness direction of the semiconductor substrate, and the thickness direction is perpendicular to the upper surface of the semiconductor substrate. The first photosensitive device and the third photosensitive device overlap each other in the thickness direction. The second and third photosensitive devices do not overlap each other in the thickness direction. Each of the second and third photosensitive devices includes The upper surface, close to the upper surface of the semiconductor substrate, The lower surface, facing the upper surface and away from the semiconductor substrate, and the upper surface. In the doped region between the upper surface and the lower surface, The upper surface of the third photosensing device is farther from the upper surface of the semiconductor substrate relative to the upper surface of the second photosensing device, and The doped region of the third photosensitive device is thicker than the doped region of the second photosensitive device in the thickness direction. The external quantum efficiency of the third photosensitive device at a wavelength included in the third wavelength spectrum varies based on the thickness of the doped region of the third photosensitive device in the thickness direction. The thickness of the doped region of the third photosensitive device satisfies Equation 2: [Relational Equation 2] 2.5 × EQE(T3) ≥ EQE(T2) In relational equation 2, EQE(T3) is based on the fact that the thickness of the doped region of the third photosensitive device in the thickness direction is thickness T3, and the external quantum efficiency of the third photosensitive device at a wavelength included in the third wavelength spectrum. EQE(T2) is based on the fact that the thickness of the doped region of the second photosensitive device in the thickness direction is thickness T2, the external quantum efficiency of the second photosensitive device at a wavelength included in the second wavelength spectrum, and T3>T2, where the thickness T3 is greater than or equal to 1 μm and the thickness T2 is between 200 nm and 800 nm.

2. The image sensor of claim 1, wherein the image sensor does not include any color filter.

3. The image sensor according to claim 1, further comprising: An insulating layer between the semiconductor substrate and the first photosensitive device.

4. The image sensor of claim 1, wherein the upper surface of the third photosensitive device is further away from the upper surface of the semiconductor substrate by a distance equal to or greater than 300 nm relative to the upper surface of the second photosensitive device.

5. The image sensor of claim 4, wherein the upper surface of the second photosensitive device is located at a depth of 0 nm to 200 nm from the upper surface of the semiconductor substrate in the thickness direction.

6. The image sensor according to claim 1, wherein The wavelength selectivity of the third wavelength spectrum of the third photosensitive device relative to the second wavelength spectrum varies according to the depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction, and The depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction is a depth D3 that satisfies Equation 1: [Relational Equation 1] EQE(λ3)≥3×EQE(λ2) in, In relational equation 1, EQE(λ3) is based on the depth D3 of the upper surface of the third photosensitive device in the semiconductor substrate, the external quantum efficiency of the third photosensitive device at a wavelength λ3 included in the third wavelength spectrum, and EQE(λ2) is the external quantum efficiency of the third photosensitive device at a wavelength λ2 included in the second wavelength spectrum, based on the depth D3 of the upper surface of the third photosensitive device in the semiconductor substrate.

7. The image sensor of claim 6, wherein the depth of the upper surface of the third photosensitive device from the upper surface of the semiconductor substrate in the thickness direction is 400 nm to 1 μm.

8. The image sensor according to claim 1, wherein the doped region of the third photosensitive device is 1.5 to 5 times thicker in the thickness direction than the doped region of the second photosensitive device.

9. The image sensor according to claim 1, wherein, The thickness T3 is 1 μm to 3 μm, and The thickness T2 is 300 nm to 700 nm.

10. The image sensor of claim 1, wherein the external quantum efficiency of the second photosensitive device at a wavelength included in the second wavelength spectrum is 1.1 to 2.5 times that of the external quantum efficiency of the third photosensitive device at a wavelength included in the third wavelength spectrum.

11. The image sensor according to claim 1, wherein, The difference between the external quantum efficiency of the image sensor at a wavelength in the first wavelength spectrum, the external quantum efficiency of the image sensor at a wavelength in the second wavelength spectrum, and the external quantum efficiency of the image sensor at a wavelength in the third wavelength spectrum is less than or equal to 50%.

12. The image sensor of claim 1, wherein the third wavelength spectrum includes wavelengths longer than the second wavelength spectrum.

13. The image sensor of claim 1, wherein the first color is green, the second color is blue, and the third color is red.

14. The image sensor according to claim 1, wherein The first photosensitive device includes The first and second electrodes facing each other, and A photoelectric conversion layer between the first electrode and the second electrode.

15. The image sensor of claim 14, further comprising: The insulating layer between the semiconductor substrate and the first photosensitive device, and The first electrode is integrated into the insulating layer.

16. The image sensor according to claim 14, wherein The first photosensitive device further includes a buffer layer between the first electrode and the photoelectric conversion layer and / or between the second electrode and the photoelectric conversion layer. The buffer layer comprises lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof.

17. An electronic device comprising an image sensor according to claim 1.

Images