Thin film transistor, display panel and display device

Abstract

The present application discloses a thin film transistor, a display panel and a display device, and relates to the field of semiconductor technology. The thin film transistor comprises: a metal layer; a heat dissipation layer, and the metal layer is connected to the heat dissipation layer. By setting the heat dissipation layer, the heat dissipation layer is connected to the metal layer. Since the operation of the thin film transistor requires electricity to be supplied to the electrode, usually a large part of the heat is generated from the metal layer as the electrode. The heat dissipation layer can directly dissipate the heat of the metal layer in the thin film transistor, which can solve the heating problem of the thin film transistor with a large electron mobility.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a thin film transistor, a display panel and a display device. Background Art

[0002] In the field of display technology, as users demand high PPI (Pixel Per Inch), high refresh rate, and narrow bezel products, traditional a-Si (amorphous silicon) thin-film transistor-based products can no longer meet the performance requirements of display devices. Oxide semiconductor technology, as the most likely new technology to replace a-Si products, has become the current research focus in this field.

[0003] However, the electron mobility of current oxide thin film transistors is relatively low. In order to meet the requirements of high PPI, high refresh rate and narrow frame, the electron mobility of oxide thin film transistors needs to be increased. However, increasing the electron mobility of oxide thin film transistors will aggravate the heating phenomenon of oxide thin film transistors, thereby affecting the reliability of display devices. Therefore, how to solve the heating problem of thin film transistors with large electron mobility has become a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0004] The embodiments of the present application provide a thin film transistor, a display panel and a display device, which can solve the heating problem of thin film transistors with relatively large electron mobility.

[0005] According to a first aspect of an embodiment of the present application, a thin film transistor is provided, comprising:

[0006] Metal layer;

[0007] The metal layer is connected to the heat dissipation layer.

[0008] In some embodiments, the metal layer includes a gate metal layer, and the heat dissipation layer is disposed on at least one side of the gate metal layer.

[0009] In some embodiments, the thin film transistor further includes: an active layer;

[0010] The metal layer includes a source-drain metal layer, and the source-drain metal layer is connected to the active layer;

[0011] The heat dissipation layer is arranged on a side of the source and drain metal layer away from the active layer.

[0012] In some embodiments, the heat dissipation layer includes a hollow area.

[0013] In some embodiments, the material used to make the active layer includes metal oxide.

[0014] In some embodiments, the material used to prepare the heat dissipation layer includes a carbon-based material.

[0015] According to a second aspect of an embodiment of the present application, a display panel is provided, comprising:

[0016] A thin film transistor as described in the first aspect.

[0017] In some embodiments, the display panel further comprises:

[0018] A driving component, the driving component is electrically connected to the thin film transistor;

[0019] The driving assembly is provided with a first heat sink.

[0020] In some embodiments, the driving component includes a flexible circuit board and a driving chip, and the driving chip is disposed on the flexible circuit board;

[0021] The first heat sink is arranged on a side of the driving chip away from the flexible circuit board.

[0022] In some embodiments, the display panel further comprises:

[0023] A base substrate, wherein the thin film transistor is arranged on one side of the base substrate;

[0024] The display panel comprises a display area and a non-display area, and a second heat sink is disposed on a side of the base substrate in the non-display area away from the thin film transistor.

[0025] In some embodiments, the non-display area includes a first non-display area and a second non-display area, there are a plurality of thin film transistors, and the thin film transistor disposed in the first non-display area is a first thin film transistor;

[0026] A driving connection line is provided in the second non-display area, and the first thin film transistor is electrically connected to the driving component through the driving connection line;

[0027] The second heat sink is disposed in a heat dissipation sub-area, the heat dissipation sub-area is in the first non-display area, and the heat dissipation sub-area is connected to the second non-display area.

[0028] In some embodiments, the display panel further comprises:

[0029] Liquid crystal layer;

[0030] The color filter substrate is provided with the liquid crystal layer between the thin film transistor and the color filter substrate.

[0031] In some embodiments, the thin film transistor disposed in the display area is a second thin film transistor, and a light-emitting device is further disposed in the display area. The light-emitting device is electrically connected to the second thin film transistor, and the second thin film transistor is electrically connected to the first thin film transistor.

[0032] In some embodiments, there are a plurality of first thin film transistors, some of which are output thin film transistors, and some of which are reset thin film transistors;

[0033] The channel width-to-length ratio of the output thin film transistor is greater than the channel width-to-length ratio of the reset thin film transistor.

[0034] According to a third aspect of the embodiments of the present application, a display device is provided, including:

[0035] A display panel as described in the second aspect.

[0036] The thin film transistor, display panel and display device provided in the embodiments of the present application are provided with a heat dissipation layer, and the heat dissipation layer is connected to the metal layer. Since the operation of the thin film transistor requires power to be supplied to the electrodes, usually most of the heat is generated from the metal layer serving as the electrode. The heat dissipation layer can directly dissipate the heat from the metal layer that generates heat in the thin film transistor, thereby solving the heating problem of thin film transistors with larger electron mobility. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic diagram of the structure of a thin film transistor provided in an embodiment of the present application;

[0038] Figure 2 A schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application;

[0039] Figure 3 A schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application;

[0040] Figure 4 A schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application;

[0041] Figure 5 A schematic diagram of the structure of a thin film transistor provided in an embodiment of the present application;

[0042] Figure 6 A schematic diagram of the shape of a heat dissipation layer provided in an embodiment of the present application;

[0043] Figure 7 A schematic diagram of the shape of another heat dissipation layer provided in an embodiment of the present application;

[0044] Figure 8A schematic diagram of the shape of another heat dissipation layer provided in an embodiment of the present application;

[0045] Fig. 9 A schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0046] Fig.10 A schematic cross-sectional view of a driving assembly along AA′ provided in an embodiment of the present application;

[0047] Fig.11 A schematic diagram of the structure of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0049] In this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The term "more than two" includes two or more than two situations.

[0050] In the field of display technology, with the user's demand for high PPI (Pixel Per Inch), high refresh rate, and narrow frame products, traditional products based on a-Si (amorphous silicon) thin film transistors can no longer meet the performance requirements of display devices. Oxide semiconductor technology, as the most likely new technology to replace a-Si products, has become the focus of research in the current field. However, the electron mobility of current oxide thin film transistors is relatively low. In order to meet the needs of high PPI, high refresh rate, and narrow frame, it is necessary to increase the electron mobility of oxide thin film transistors. However, increasing the electron mobility of oxide thin film transistors will aggravate the heating phenomenon of oxide thin film transistors, thereby affecting the reliability of display devices. Therefore, how to solve the heating problem of thin film transistors with larger electron mobility has become a technical problem that needs to be solved urgently by technicians in this field.

[0051] In view of this, the present application provides a thin film transistor, a display panel and a display device, which can solve the heating problem of thin film transistors with relatively large electron mobility.

[0052] In a first aspect of an embodiment of the present application, a thin film transistor is provided. Figure 1 A schematic diagram of the structure of a thin film transistor provided in an embodiment of the present application. Figure 1 As shown, the thin film transistor provided in the embodiment of the present application includes: a metal layer 100 and a heat dissipation layer 200, and the metal layer 100 is connected to the heat dissipation layer 200. The thin film transistor also includes a substrate layer 300, and the metal layer 100 and the heat dissipation layer 200 are both arranged on the substrate layer 300. The metal layer 100 of the thin film transistor can be used as an electrode, and the heat dissipation layer 200 can be arranged on one side or both sides of the metal layer 100, which is not specifically limited in the embodiment of the present application. The function of the heat dissipation layer 200 is to dissipate heat for the metal layer 100, therefore, the heat dissipation layer 200 needs to be connected to the metal layer 100, and the connection method is not specifically limited. The method of increasing the electron mobility of the oxide thin film transistor is usually to increase the channel width-to-length ratio of the oxide thin film transistor. When the channel width-to-length ratio increases, the oxide thin film transistor will generate a large amount of heat during operation. The operation of the thin film transistor requires power to be supplied to the electrode. Therefore, usually most of the heat is generated from the metal layer 100 serving as the electrode. The increase in heat will affect the performance of the thin film transistor and the performance of the display device driven by the thin film transistor. Therefore, in order to solve the heating problem of the thin film transistor with a large electron mobility, it is necessary to dissipate the heat of the thin film transistor. The metal layer 100 that generates heat in the thin film transistor can be directly dissipated. A heat dissipation layer 200 is provided to dissipate the heat of the metal layer 100. The heat dissipation layer 200 can be made of a material with a large thermal conductivity coefficient, which is not specifically limited in the embodiments of the present application. Figure 1The heat dissipation layer 200 and the metal layer 100 are shown to be connected in a vertical contact manner, and may also be connected in a horizontal manner, which is not specifically limited in the embodiment of the present application.

[0053] The thin film transistor provided in the embodiment of the present application is provided with a heat dissipation layer 200, and the heat dissipation layer 200 is connected to the metal layer 100. Since the operation of the thin film transistor requires power to be supplied to the electrodes, usually most of the heat is generated from the metal layer 100 serving as the electrode. The heat dissipation layer 200 can directly dissipate the heat from the metal layer 100 that generates heat in the thin film transistor, thereby solving the heating problem of the thin film transistor with a large electron mobility.

[0054] In some embodiments, the metal layer includes a gate metal layer, and the heat dissipation layer is disposed on at least one side of the gate metal layer.

[0055] For example, Figure 2 This is a schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application. Figure 2 As shown, the metal layer includes a gate metal layer 110 and a source-drain metal layer 120 . The gate metal layer 110 is used as a gate electrode of the thin film transistor, and the source-drain metal layer 120 is used as a source electrode and a drain electrode. Figure 2 The thin film transistor shown also includes an active layer 400, and the source-drain metal layer 120 is connected to the active layer 400. An isolation layer is provided between the gate metal layer 110 and the active layer 400, and the material of the isolation layer can be one or both of silicon oxide and silicon nitride. A passivation layer is provided on the source-drain metal layer 120, and the embodiments of the present application are not specifically limited. Figure 2 The heat dissipation layer 200 shown is arranged between the substrate layer 300 and the gate metal layer 110. The heat dissipation layer 200 can also be arranged on the side of the gate metal layer 110 away from the substrate layer 300, or the heat dissipation layer 200 can be arranged on both the upper and lower sides of the gate metal layer 110. Different settings can be made according to different requirements for heat dissipation and heat dissipation effect, and the embodiments of the present application are not specifically limited.

[0056] It should be noted that Figure 2 The thin film transistor shown is a bottom gate structure. The embodiment of the present application is also applicable to a thin film transistor with a top gate structure. Figure 2 The structure of the thin film transistor is only illustrative and is not intended to be a specific limitation of the present application.

[0057] The thin film transistor provided in the embodiment of the present application comprises a metal layer including a gate metal layer 110, and a heat dissipation layer 200 is arranged on at least one side of the gate metal layer 110. The heat dissipation layer 200 has a heat dissipation effect on the gate metal layer 110 serving as a gate electrode. The gate metal layer 110 serving as a gate electrode serves as a switching electrode when the thin film transistor is running, and is prone to generate heat. The heat dissipation layer 200 is arranged on at least one side of the gate metal layer 110, which can have a good heat dissipation effect on the thin film transistor and can better solve the heating problem of the thin film transistor with a large electron mobility.

[0058] In some embodiments, the thin film transistor further comprises: an active layer; the metal layer comprises a source-drain metal layer, the source-drain metal layer is connected to the active layer; and a heat dissipation layer is arranged on a side of the source-drain metal layer away from the active layer. The material for preparing the active layer comprises a metal oxide, and the metal oxide may be IGZO (indium gallium zinc oxide), or other metal oxides, which are not specifically limited in the embodiments of the present application. The thin film transistor whose active layer is a metal oxide material may be an oxide thin film transistor.

[0059] For example, Figure 3 A schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application. Figure 3 As shown, the heat dissipation layer 200 is disposed on the side of the source-drain metal layer 120 away from the active layer 400. Since one side of the source-drain metal layer 120 needs to be connected to the active layer 400, the other side can be used to set the heat dissipation layer 200. It should be noted that if the material of the heat dissipation layer 200 is a conductive material and can cause a charge change in the active layer 400, the heat dissipation layer 200 can also be disposed between the active layer 400 and the source-drain metal layer 120, which is not specifically limited in the embodiment of the present application.

[0060] In the thin film transistor provided in the embodiment of the present application, the heat dissipation layer 200 is arranged on the side of the source-drain metal layer 120 away from the active layer 400. The heat dissipation layer 200 plays a heat dissipation role for the source-drain metal layer 120 as the source electrode and the drain electrode. The source-drain metal layer 120 as the source electrode and the drain electrode plays a role in writing data signals when the thin film transistor is running, and is also more likely to generate heat. The heat dissipation layer 200 is arranged on one side of the source-drain metal layer 120, which can have a good heat dissipation effect on the thin film transistor, and can better solve the heating problem of the oxide thin film transistor with a large electron mobility.

[0061] In some embodiments, the material for preparing the heat dissipation layer may include a carbon-based material, specifically graphene or carbon fiber, etc., which is not specifically limited in the embodiments of the present application. Carbon-based materials have good thermal conductivity, low material cost, and can be made thinner, and are suitable for integration in semiconductor thin film devices.

[0062] It should be noted that the thermal conductivity of graphene is 5300W / m·K, while the thermal conductivity of traditional glass is 0.8W / m·K. Graphene can quickly conduct away the heat generated by the metal layer, reducing the impact of heat on the stability of thin-film transistors. Graphene is thin overall and only requires 100W to be integrated into the device. It does not affect the overall flatness, and is located below the gate metal layer 110 or above the source and drain metal layer 120 , away from the active layer 400 , and has little impact on the device.

[0063] In some embodiments, the heat dissipation layer includes a hollow area.

[0064] For example, Figure 4 A schematic diagram of the structure of another thin film transistor provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of a thin film transistor provided in an embodiment of the present application. Figure 4 and Figure 5 As shown, the heat dissipation layer 200 is provided with a hollow area 210. If the heat dissipation layer 200 is made of a material with poor light transmittance, such as graphene, there is a special requirement for light transmittance in transparent display or liquid crystal display. Therefore, the hollow area 210 is provided in the heat dissipation layer 200, so that the thin film transistor can be dissipated without affecting the light transmittance. In addition, the blank space of the hollow area 210 can also play a role in enhancing heat dissipation, and further improve the heat dissipation effect of the thin film transistor without affecting the transmittance.

[0065] The thin film transistor provided in the embodiment of the present application has a hollow region 210 disposed in the heat dissipation layer 200, which can dissipate heat for the thin film transistor without affecting light transmittance. In addition, the blank space of the hollow region 210 can also enhance heat dissipation, further improving the heat dissipation effect of the thin film transistor without affecting transmittance.

[0066] For example, Figure 6 A schematic diagram of the shape of a heat dissipation layer provided in an embodiment of the present application; Figure 7 A schematic diagram of the shape of another heat dissipation layer provided in an embodiment of the present application; Figure 8 A schematic diagram of the shape of another heat dissipation layer provided in an embodiment of the present application. Figure 6 The heat dissipation layer 200 shown is in a planar shape, which is more suitable for an organic light-emitting top-emitting display panel without having to consider the light transmittance problem. Figure 7 The heat dissipation layer 200 shown is strip-shaped, and the strip shape of the heat dissipation layer 200 is adapted to the shape of the gate metal layer 110 . The area of ​​the heat dissipation layer 200 is slightly larger than that of the gate metal layer 110 , which can better dissipate heat for the gate metal layer 110 . Figure 7The heat dissipation layer 200 shown is also strip-shaped, but the strip shape of the heat dissipation layer 200 is adapted to the shape of the source-drain metal layer 120 . The area of ​​the heat dissipation layer 200 is slightly larger than that of the source-drain metal layer 120 , which can better dissipate heat for the source-drain metal layer 120 . Figure 6-Figure 8 The shape of the heat dissipation layer shown is only for illustration and is not intended to be a specific limitation of the present application.

[0067] For example, taking graphene as the material for preparing the heat dissipation layer 200, refer to Figure 4 , the preparation method of the heat dissipation layer 200 is briefly described as follows:

[0068] The graphene slurry is coated on the substrate layer 300 , wherein the graphene slurry includes graphene and a solvent.

[0069] The solvent is evaporated to obtain a graphene film layer.

[0070] Apply photoresist and expose and develop the graphene film layer.

[0071] The graphene film layer is etched to obtain a heat dissipation layer. Figure 7 or Figure 8 The strip-shaped heat dissipation layer 200 shown may also be etched to form a hollow area 210, which is not specifically limited in the embodiment of the present application.

[0072] According to a second aspect of the embodiment of the present application, a display panel is provided, comprising: the thin film transistor according to the first aspect. The thin film transistor according to the first aspect is used as a driving device in the display panel.

[0073] The display panel provided in the embodiment of the present application is configured with a heat dissipation layer in the thin film transistor, wherein the heat dissipation layer is connected to the metal layer. The operation of the thin film transistor requires power to be supplied to the electrode, and usually a large portion of the heat is generated from the metal layer serving as the electrode. The heat dissipation layer can directly dissipate the heat generated by the metal layer in the thin film transistor, thereby solving the heating problem of the thin film transistor with a large electron mobility, and thereby improving the display performance and reliability of the display panel.

[0074] In some implementations, the display panel provided in the embodiments of the present application further includes: a driving component, the driving component is electrically connected to the thin film transistor; and a first heat sink is disposed on the driving component.

[0075] For example, Fig. 9 A schematic diagram of the structure of a display panel provided in an embodiment of the present application. Fig. 9As shown, the display panel includes multiple thin film transistors T00 and a driving component 500, the driving component 500 is electrically connected to the thin film transistor T00, and a first heat sink 610 is arranged on the driving component 500. The material of the first heat sink 610 can be graphene, which is not specifically limited in the embodiment of the present application. Fig. 9 The number and arrangement of the driving components 500 shown are only for illustration and are not intended to be a specific limitation of the present application. Generally, the driving component 500 is provided with an integrated circuit, which is also prone to generate heat during operation. The first heat sink 610 can dissipate the heat generated by the driving component 500 during operation, thereby preventing the driving component 500 from overheating, thereby preventing the reliability of the display panel from being reduced and the display performance from being reduced.

[0076] The display panel provided in the embodiment of the present application has a first heat sink 610 disposed on the driving component 500. The first heat sink 610 can dissipate heat generated by the driving component 500 during operation, thereby preventing the driving component 500 from overheating, thereby avoiding a decrease in the reliability of the display panel and a decrease in display performance.

[0077] In some embodiments, the driving component includes a flexible circuit board and a driving chip, and the driving chip is disposed on the flexible circuit board; the first heat sink is disposed on a side of the driving chip away from the flexible circuit board.

[0078] For example, Fig.10 A schematic cross-sectional view of a driving assembly along AA′ provided in an embodiment of the present application. Fig. 9 and Fig.10 The driving component 500 includes a flexible circuit board 510 and a driving chip 520, and the driving chip 520 is arranged on the flexible circuit board 510; the first heat sink 610 covers the driving chip 520, and the driving chip 520 is electrically connected to the thin film transistor. The driving chip 520 is generally called an IC.

[0079] For example, Fig. 9As shown, the distances between the first heat sink 610 and the four edges of the driving component 500 are L1, L2, L3, and L4, respectively, and the values ​​can be 25mm, 13mm, 8mm, and 8mm, respectively. The size of the first heat sink 610 can be 12mm×26mm. The size values ​​are only schematic and are not specifically limited to the present application. The position of the first heat sink 610 is also mainly based on the position of the driving chip 520 on the flexible circuit board 510. The circuit side of the driving chip 520 and the flexible circuit board 510 can be connected in a binding form, which is not specifically limited in the embodiment of the present application. The first heat sink 610 is attached to the side of the driving chip 520 away from the circuit side. According to experiments, it can be obtained that attaching the first heat sink 610 can reduce the temperature of the driving chip 520 from 80°C to 45°C, which can significantly reduce the temperature of the driving chip 520, and the improvement effect is obvious.

[0080] In the display panel provided in the embodiment of the present application, the first heat sink 610 is mainly used to dissipate heat for the driver chip 520. The driver chip 520 is also prone to generate heat during operation. The heat dissipation of the driver chip 520 by the first heat sink 610 can improve the reliability problem of the driver component 500 caused by heat, and can also improve the display abnormality of the display panel caused by the heat of the driver component 500.

[0081] In some embodiments, the display panel further includes: a base substrate, a thin film transistor is arranged on one side of the base substrate; the display panel includes a display area and a non-display area, and a second heat sink is arranged on the side of the base substrate in the non-display area away from the thin film transistor.

[0082] For example, continue to refer to Fig. 9 The display panel includes a display area 700 and a non-display area 800. The thin film transistor arranged in the non-display area 800 is a first thin film transistor T10, and the thin film transistor arranged in the display area 700 is a second thin film transistor T20. The first thin film transistor T10 is used to drive the second thin film transistor T20. Usually, a combination of multiple first thin film transistors T10 can constitute a shift register to form a driving circuit on the side of the display area 700. The multiple second thin film transistors T20 can be arranged in an array in the display area 700, which is not specifically limited in the embodiment of the present application. The first thin film transistors T10 in the driving circuit are densely arranged, and the wiring in the non-display area 800 is dense, which are easy to cause heat. A second heat sink 620 is arranged on the side of the substrate in the non-display area 800 away from the thin film transistor T00. The second heat sink 620 dissipates heat for the first thin film transistor T10 and the circuit where the first thin film transistor T10 is located.

[0083] In some embodiments, continue to refer to Figure 1The non-display area 800 includes a first non-display area 810 and a second non-display area 820. There are multiple thin film transistors, and the thin film transistor arranged in the first non-display area 810 is a first thin film transistor T10; a driving connection line is arranged in the second non-display area 820. Since the driving connection lines are usually arranged in a fan-shaped shape, the second non-display area 820 is usually called a fan-shaped area or a layout area. The first thin film transistor T10 is electrically connected to the driving component 500 through the driving connection line; the second heat sink 620 is arranged in a heat dissipation sub-area, and the heat dissipation sub-area is in the first non-display area 810, and the heat dissipation sub-area is connected to the second non-display area 820. It is easy to understand that the heat dissipation sub-area is the corner position of the first non-display area 810 close to the driving component 500. Some driving connection lines are also arranged at the position of the first non-display area 810 close to the driving component 500, and the driving connection lines here are more dense due to limited space, which is very easy to generate more heat. This is also the corner position of the display panel close to the driving component 500. Therefore, the second heat sink 620 is arranged in the heat dissipation sub-area to dissipate the heat of the first non-display area 810 close to the driving component 500. The second heat sink 620 can be attached to the back of the substrate. Experimental data show that the temperature of the non-display area where the second heat sink 620 is arranged in the heat dissipation sub-area can be reduced from 45°C to 37°C, with a temperature reduction of 8°C. The second heat sink 620 can be made of the same material and shape as the first heat sink 610, and the embodiments of the present application are not limited thereto.

[0084] The display panel provided in the embodiment of the present application has a second heat sink 620 disposed in the non-display area. Specifically, the second heat sink 620 is disposed in the first non-display area 810 near the driving component 500 for heat dissipation. This can avoid reliability problems and display failure problems of the display panel due to heat generation, and can improve the reliability and display performance of the display panel.

[0085] In some embodiments, the display panel further includes: a liquid crystal layer; and a color film substrate, wherein the liquid crystal layer is disposed between the thin film transistor and the color film substrate.

[0086] The display panel provided in the embodiment of the present application is a liquid crystal display panel, and the heat dissipation solutions of the above-mentioned display panels are all applicable to liquid crystal display panels.

[0087] In some embodiments, the thin film transistor disposed in the display area is a second thin film transistor, and a light emitting device is also disposed in the display area, the light emitting device is electrically connected to the second thin film transistor, and the second thin film transistor is electrically connected to the first thin film transistor. The second thin film transistor is used to drive the light emitting device to emit light to realize the display function, and the light emitting device may be an organic light emitting display device, which is not specifically limited in the embodiments of the present application.

[0088] The display panel provided in the embodiment of the present application is a self-luminous display panel, and the heat dissipation solutions of the above-mentioned display panels are all applicable to organic light-emitting display panels.

[0089] In some embodiments, there are multiple first thin film transistors, some of which are output thin film transistors, and some of which are reset thin film transistors; the channel width-to-length ratio of the output thin film transistor is greater than the channel width-to-length ratio of the reset thin film transistor. The output thin film transistor is mainly used to output the driving signal of the driving chip to the second thin film transistor, the reset thin film transistor is mainly used to reset the shift register, and the remaining first thin film transistors are also used for other purposes, which are not listed here one by one. Increasing the channel width-to-length ratio of the output thin film transistor can improve the output performance of the output thin film transistor, and the channel width-to-length ratio of the remaining first thin film transistors can be left unchanged. Specifically, the channel width-to-length ratio of the output thin film transistor 5cm away from the driving connection line can be increased, which can improve the output performance of the output thin film transistor near the driving connection line. Since a second heat sink is provided at the connection position between the driving connection line and the shift register, the heat caused by the increase in the channel width-to-length ratio of the output thin film transistor can be conducted away by the second heat sink, which will not cause the problem of local overheating, and at the same time, it can increase the on-state current of the output thin film transistor and improve the problem of insufficient output capacity.

[0090] The display panel provided in the embodiment of the present application increases the channel width-to-length ratio of the output thin film transistor on the basis of the heat dissipation solution of the above-mentioned display panel, while the channel width-to-length ratios of the other thin film transistors are not adjusted. The channel width-to-length ratio of the first thin film transistor is set differently to increase the on-state current of the output thin film transistor and improve the problem of insufficient output capacity.

[0091] According to a third aspect of the embodiments of the present application, a display device is provided. Fig.11 This is a schematic diagram of the structure of a display device provided in an embodiment of the present application. Fig.11 As shown, the display device provided in the embodiment of the present application includes the display panel 1000 as described in the second aspect.

[0092] The display device provided in the embodiment of the present application may be a smart phone, a tablet computer, a laptop computer, a car display, etc., and the embodiment of the present application does not make any specific limitation.

[0093] The display device provided in the embodiment of the present application is provided with a heat dissipation layer, and the heat dissipation layer is connected to the metal layer. The operation of the thin film transistor requires power to be supplied to the electrode. Usually, most of the heat is generated from the metal layer serving as the electrode. The heat dissipation layer can directly dissipate the heat from the metal layer that generates heat in the thin film transistor, which can solve the heating problem of the thin film transistor with a large electron mobility, and further solve the heating problem of the display panel.

[0094] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.

[0095] Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalents, this specification is also intended to include these modifications and variations.

Claims

1. A display panel, characterized in that: include: The display area and the non-display area include a first non-display area and a second non-display area. The first non-display area is provided with a plurality of thin film transistors, and the thin film transistors include: substrate layer; Metal layer; The heat dissipation layer is connected to the metal layer, and the heat dissipation layer includes graphene, and the thickness of the graphene is 10 to The metal layer includes a gate metal layer, and the heat dissipation layer is arranged between the substrate layer and the gate metal layer; An active layer, the metal layer comprising a source-drain metal layer, the source-drain metal layer being connected to the active layer; The heat dissipation layer is arranged on a side of the source and drain metal layer away from the active layer.

2. The display panel according to claim 1, characterized in that: The heat dissipation layer includes a hollow area.

3. The display panel according to claim 1, characterized in that: Also includes: A driving component, the driving component is electrically connected to the thin film transistor; The driving assembly is provided with a first heat sink.

4. The display panel according to claim 3, characterized in that: The driving component comprises a flexible circuit board and a driving chip, and the driving chip is arranged on the flexible circuit board; The first heat sink is arranged on a side of the driving chip away from the flexible circuit board.

5. The display panel according to claim 3, characterized in that: Also includes: A base substrate, wherein the thin film transistor is arranged on one side of the base substrate; A second heat sink is disposed on a side of the base substrate in the non-display area away from the thin film transistor.

6. The display panel according to claim 5, characterized in that: The thin film transistor disposed in the first non-display area is a first thin film transistor; A driving connection line is provided in the second non-display area, and the first thin film transistor is electrically connected to the driving component through the driving connection line; The second heat sink is disposed in a heat dissipation sub-area, the heat dissipation sub-area is in the first non-display area, and the heat dissipation sub-area is connected to the second non-display area.

7. The display panel according to claim 6, characterized in that: Also includes: Liquid crystal layer; The color filter substrate is provided with the liquid crystal layer between the thin film transistor and the color filter substrate.

8. The display panel according to claim 6, characterized in that: The thin film transistor arranged in the display area is a second thin film transistor. A light emitting device is also arranged in the display area. The light emitting device is electrically connected to the second thin film transistor, and the second thin film transistor is electrically connected to the first thin film transistor.

9. The display panel according to claim 6, characterized in that: Some of the first thin film transistors are output thin film transistors, and some of the first thin film transistors are reset thin film transistors; The channel width-to-length ratio of the output thin film transistor is greater than the channel width-to-length ratio of the reset thin film transistor.

10. A display device, characterized in that: include: A display panel as claimed in any one of claims 1 to 9.

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