A driving circuit and control method for suppressing GaN HEMT half-bridge crosstalk conduction and gate reverse overvoltage

By setting up a low-impedance bridge arm crosstalk suppression circuit in the gate shutdown circuit of the GaN HEMT half-bridge circuit, the crosstalk on and gate reverse overvoltage problems are solved, and the effect of reducing device turn-on loss and improving reliability is achieved.

CN113991996BActive Publication Date: 2025-03-25MINNAN INST OF SCI & TECH
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Patent Information

Application Number
CN202111093950.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-09-17
Publication Date
2025-03-25
Estimated Expiration
2041-09-17

AI Technical Summary

Technical Problem

There are crosstalk on and gate reverse overvoltage problems in GaN HEMT half-bridge circuits, resulting in increased device turn-on loss and reduced reliability.

Method used

By providing a low-impedance bridge arm crosstalk suppression circuit in the gate shutdown circuit of GaN HEMT, the impedance of the gate shutdown circuit is reduced, thereby suppressing the generation of crosstalk on and gate reverse overvoltage.

Benefits of technology

It effectively suppresses crosstalk on and gate reverse overvoltage in GaN HEMT half-bridge circuit, reduces device turn-on loss, and improves device reliability.

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Abstract

The present invention relates to the field of power electronics, and in particular to a driving circuit for suppressing half-bridge crosstalk conduction and gate reverse overvoltage of GaN HEMT, wherein the upper bridge arm circuit comprises a first driving circuit and a first low-impedance bridge arm crosstalk suppression circuit, and the lower bridge arm circuit comprises a second driving circuit and a second low-impedance bridge arm crosstalk suppression circuit. The circuit suppresses the generation of gate reverse overshoot from the perspective of reducing the gate turn-off loop impedance of the GaN HEMT in the off state without affecting the normal turn-off speed of the GaN HEMT and without using negative voltage turn-off to increase reverse overvoltage.
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