image sensor

By employing an internal pixel isolation layer formed together with the pixel isolation layer in the image sensor, the problems of photodiode alignment error and saturation are solved, the autofocus function and resolution are improved, and the sensitivity of the image sensor is enhanced.

CN114079736BActive Publication Date: 2026-07-24SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
CN202110912216.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-08-10
Filing Date
2021-08-10
Publication Date
2026-07-24
Estimated Expiration
2041-08-10

AI Technical Summary

Technical Problem

Existing image sensors are prone to alignment errors when forming the isolation layer between photodiodes, which leads to deterioration of autofocus function and easy saturation of photodiodes.

Method used

The internal isolation layer of the pixel is formed together with the pixel isolation layer through a single process, which ensures accurate alignment and reduces the difference in the light receiving area of ​​the photodiode. Isolation layers made of different materials are used to reflect excess light and limit the saturation of the photodiode.

Benefits of technology

The autofocus function of the image sensor has been improved, the resolution has been increased, the light receiving area error of the photodiode has been reduced, the sensitivity has been enhanced, and photodiode saturation has been prevented.

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Abstract

An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between adjacent pixels in a plurality of pixels. Each of the plurality of pixels includes a pixel circuit under at least one photodiode. The logic circuit obtains a pixel signal from the plurality of pixels. The pixel array includes at least one autofocus pixel including a first photodiode, a second photodiode, a pixel-internal isolation layer between the first photodiode and the second photodiode, and a microlens over the first photodiode and the second photodiode. The pixel-internal isolation layer includes a first pixel-internal isolation layer and a second pixel-internal isolation layer separated from each other in a first direction perpendicular to an upper surface of a substrate, the first pixel-internal isolation layer and the second pixel-internal isolation layer including different materials.
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