Ultra-low temperature preparation method of TMO film and TMO-TFT
Through N2 plasma treatment technology, the temperature of the TMO film formation reaction is reduced, and the problem of high-temperature annealing is solved in the traditional solution method for preparing TMO-TFTs is solved, and ultra-low temperature preparation and high compatibility of TMO films and TMO-TFTs are achieved.
CN114121661BActive Publication Date: 2025-04-04XIAN TECH UNIV
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Patent Information
- Application Number
- CN202111199880.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-10-14
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2041-10-14
AI Technical Summary
Technical Problem
The traditional solution method requires an annealing temperature above 400°C, exceeding the temperature withstand of most flexible substrates, limiting its application in flexible display technology.
Method used
By using N2 plasma treatment technology, the pre-annealed TMO film is subjected to N2 plasma treatment to reduce the temperature required for the film formation reaction, thereby achieving ultra-low temperature preparation of TMO films and TMO-TFTs.
Benefits of technology
Ultra-low temperature preparation of TMO thin film and TMO-TFT is realized, and its good semiconductor characteristics and excellent electrical characteristics are maintained, thereby enhancing the compatibility of TMO-TFT with flexible substrates.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention provides an ultra-low temperature preparation method for a TMO film and a TMO-TFT. The ultra-low temperature preparation method comprises: S1: preparing a TMO precursor solution; S2: cleaning and surface activation of a substrate; S3: preparing a pre-deposited TMO wet film; S4: pre-annealing the pre-deposited TMO wet film obtained in S3 to obtain a pre-annealed TMO film; S5: performing N2 plasma treatment or N2 plasma treatment and post-annealing on the pre-annealed TMO film obtained in S4 to obtain a TMO film; S6: using the TMO film obtained in S5 as an active layer to prepare a TFT to obtain a TMO-TFT. The present invention realizes the ultra-low temperature preparation of a TMO film and a TMO-TFT while ensuring that the TMO film has good semiconductor properties and the TMO-TFT exhibits excellent electrical properties, thereby enhancing the compatibility of the TMO-TFT with a flexible substrate.
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