Control method and inductively coupled plasma processing device
By using multiple antenna segments and impedance adjustment units in the inductively coupled plasma processing device, the impedances of each region and sub-region are finely adjusted, and the problem of inaccurate plasma density control is solved, and the uniformity and high-quality treatment of plasma density in substrate processing is achieved.
CN114126177BActive Publication Date: 2025-03-28TOKYO ELECTRON LTD
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Patent Information
- Application Number
- CN202110967087.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-09-01
- Filing Date
- 2021-08-23
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2041-08-23
AI Technical Summary
Technical Problem
The prior art is difficult to control plasma density with high precision, especially when processing large-area substrates, the uniformity of plasma density is insufficient, which affects the quality of substrate processing.
Method used
By using a plurality of first antenna segments and impedance adjustment units in the inductively coupled plasma processing device, it is connected to the high-frequency power supply, and the impedances of each region and sub-region are adjusted to finely control the distribution of plasma density.
Benefits of technology
High-precision control of plasma density is achieved, ensuring uniformity of plasma density in large-area substrate processing, and improving the quality and consistency of substrate processing.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention provides a control method and an inductively coupled plasma processing device, which can control plasma density with higher precision. The control method is a control method in an inductively coupled plasma processing device including a plurality of first antenna segments and a plurality of impedance adjustment units, wherein the plurality of first antenna segments constitute an inductively coupled antenna, and the plurality of impedance adjustment units are respectively connected to the plurality of first antenna segments, and the control method includes the following steps: supplying high-frequency power to the plurality of first antenna segments to generate plasma; referring to a storage unit in which a plurality of first zones and a plurality of second zones are set, adjusting the impedance of the plurality of first zones respectively by the plurality of impedance adjustment units, wherein the plurality of first zones correspond to each first antenna segment of the plurality of first antenna segments, and the plurality of second zones correspond to a specific first antenna segment corresponding to a specific first zone among the plurality of first zones; and adjusting the impedance of the plurality of second zones respectively by the impedance adjustment unit connected to the specific first antenna segment.
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