Plasma processing device and plasma processing method

By using plasma luminescence detection and differential waveform data analysis methods in the plasma processing device, combined with the weighted calculation of multiple differential waveform pattern data, the problem of film thickness estimation and etching end point determination under multiple deviations on the surface of the semiconductor wafer is solved, and high-precision film thickness detection and end point determination are achieved.

CN114360993BActive Publication Date: 2025-03-25HITACHI HIGH TECH CORP
3 Cites 0 Cited by

Patent Information

Application Number
CN202111084850.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-09-30
Filing Date
2021-09-14
Publication Date
2025-03-25
Estimated Expiration
2041-09-14

AI Technical Summary

Technical Problem

In the prior art, when various deviations such as base film thickness and mask film thickness occur in the fine shape of the semiconductor wafer surface, it is difficult to achieve high-precision film thickness estimation and etching end point determination.

Method used

A plasma processing device and method are designed, using plasma luminescence detection and differential waveform data analysis in the vacuum processing chamber, weighted calculations are performed through multiple differential waveform pattern data in the database, accurately estimate the film thickness of the processed film, and determine the etching end point.

Benefits of technology

Even when multiple deviations occur on the surface of the semiconductor wafer, the remaining film thickness and etching end points of the processed film can be detected accurately, thereby improving the yield of device manufacturing.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The present invention provides a plasma processing device and a plasma processing method. Even in the case where a deviation occurs in the fine shape of the surface of a semiconductor wafer, the thickness of a processed film can be detected with good accuracy. In a plasma processing device having a processing state detection component for detecting the state of a processed film of a processed object processed inside a vacuum processing chamber, the processing state detection component is constituted by the following elements: a light emission detection unit for detecting light emission of plasma; a calculation unit for obtaining differential waveform data of light emission of plasma; a database unit for storing a plurality of differential waveform pattern data; a film thickness calculation unit for calculating an estimated value of the film thickness of a processed film processed on the processed object by assigning a weight based on the difference between the differential waveform data obtained in the calculation unit and the plurality of differential waveform pattern data stored in the database unit; and an end point determination unit for determining the end point of plasma processing based on the estimated value of the film thickness of the processed film calculated by the film thickness calculation unit.
Need to check novelty before this filing date? Find Prior Art