A method for pulling a six-inch zone melting silicon single crystal and a heat shield used therein
By setting a heat screen in the zone melting single crystal furnace and controlling the cooling water pressure, the cooling heat dissipation problem during the growth of large-sized zone melting silicon single crystals is solved, the crystallization rate is improved, and the dislocation-free six-inch zone melting single crystal drawing is achieved.
Patent Information
- Application Number
- CN202210164175.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-02-23
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2042-02-23
AI Technical Summary
During the growth of single crystals in large-size areas, cooling and heat dissipation problems lead to single crystal explosion or remelting, which leads to crystallization failure.
A heat screen is designed, which is set below the heating coil in the middle furnace chamber of the melting single crystal furnace. By controlling the size of the heat screen and the cooling water pressure, the lower part of the single crystal is reflected by heat and controls the internal and external temperature gradient.
It effectively solves the problem of cooling and heat dissipation of single crystals in large-size areas during growth, improves the crystallization rate of single crystals, avoids explosion and melting, and realizes the drawing of six-inch dislocation-free melting silicon single crystals.