A radio frequency front-end amplifier circuit, chip, device and configuration method

Abstract

The present application provides a radio frequency front-end amplifier circuit, chip, device, and configuration method. The radio frequency front-end amplifier circuit includes: at least two low-noise amplifier modules; each of the low-noise amplifier modules is used to amplify one input voltage signal and convert it into one or more intermediate current signals; and a voltage output module, connected to each of the low-noise amplifier modules, is used to combine the intermediate current signals output by each of the low-noise amplifier modules and convert them into one or more output voltage signals. The radio frequency front-end amplifier circuit can be applied to radio frequency front-ends with a multi-input multi-output structure.

Description

Technical Field

[0001] The present application belongs to the field of communication technology and relates to a radio frequency front-end amplifier circuit, and in particular to a radio frequency front-end amplifier circuit, chip and device suitable for multi-input and multi-output. Background Art

[0002] At present, more and more RF front-ends are designed as Multiple Inputs Multiple Outputs (MIMO) structures. For example, more and more set-top boxes are now designed with multiple tuners to simultaneously receive signals from multiple channels of the same signal source. In addition, more and more set-top boxes are now designed with multiple RF input terminals to receive signals from two or more signal sources. For example, for satellite set-top boxes, they are designed to receive signals from two or more LNBs (Low Noise Blocks, low noise downconverters), or receive signals in additional channels outside the traditional satellite intermediate frequency band (950MH-2150MHz). However, traditional RF front-ends can often only achieve signal reception on a single channel under a single RF input, so the RF front-end amplifier circuit used inside is also designed for a single input and single output RF front-end, which is difficult to apply to a RF front-end with a multiple input and multiple output structure. Therefore, how to design an RF front-end amplifier circuit suitable for multiple input and multiple output scenarios has become one of the problems that professional and technical personnel in this field urgently need to solve. Summary of the Invention

[0003] The purpose of this application is to provide a radio frequency front-end amplifier circuit, chip, device and configuration method to solve the problem that the radio frequency front-end amplifier circuit used in the radio frequency front-end in the prior art is difficult to apply to multi-input and multi-output scenarios.

[0004] According to the first aspect of the present application, a radio frequency front-end amplifier circuit is provided for amplifying one or more input voltage signals and converting them into one or more output voltage signals. The radio frequency front-end amplifier circuit includes: at least two low-noise amplifier modules; each of the low-noise amplifier modules is used to amplify one input voltage signal and convert it into one or more intermediate current signals; a voltage output module is connected to each of the low-noise amplifier modules, and is used to combine the intermediate current signals output by each of the low-noise amplifier modules and convert them into one or more output voltage signals.

[0005] In some embodiments, the intermediate current signal includes a first current signal and a second current signal, and any of the low-noise amplification modules includes: a first processing unit, used to amplify an input voltage signal input to the low-noise amplification module and convert it into one or more first current signals; a second processing unit, used to achieve input impedance matching of the low-noise amplification module, and used to amplify an input voltage signal input to the low-noise amplification module and convert it into one or more second current signals; the number of the second current signals is the same as the number of the first current signals.

[0006] In some embodiments, the first processing unit includes: a first amplifier, used to amplify an input voltage signal input to the low-noise amplification module to obtain a first voltage signal; at least one switchable first transconductance stage; each of the first transconductance stages is connected to the first amplifier, used to convert the first voltage signal into a first current signal.

[0007] In some embodiments, the first amplifier includes: a third transconductance stage, used to convert an input voltage signal input to the low-noise amplification module into a third current signal; a first MOSFET, the gate and drain of the first MOSFET are connected, and its gate is connected to each of the first transconductance stages to form at least one current mirror, and its drain is connected to the third transconductance stage; the first MOSFET forms the first voltage signal at its gate based on the third current signal.

[0008] In some embodiments, the second processing unit includes: a matching amplifier circuit, which is used to achieve impedance matching at the input end of the low-noise amplifier module, and amplify an input voltage signal input to the low-noise amplifier module to obtain a second voltage signal, and convert the second voltage signal into a feedback signal and feed it back to the input end of the low-noise amplifier module; at least one switchable second transconductance stage, each second transconductance stage is connected to the matching amplifier circuit, and is used to convert the second voltage signal into a second current signal.

[0009] In some embodiments, the matching amplification circuit includes: a second amplifier, used to amplify an input voltage signal input to the low-noise amplification module to obtain a second voltage signal; a feedback circuit, connected to the second amplifier and the input end of the low-noise amplification module, used to convert the second voltage signal into the feedback signal and feed it back to the input end of the low-noise amplification module.

[0010] In some embodiments, the voltage output module includes: at least one current merging unit; the current merging unit is used to merge the first current signal and the second current signal output by each of the low-noise amplification modules to obtain a fourth current signal; at least one current-voltage conversion unit, respectively connected to the corresponding current merging unit; the at least one current-voltage conversion unit is used to convert the fourth current signal into the output voltage signal.

[0011] In some embodiments, the first current signal and the second current signal are single-ended signals; or the first current signal and the second current signal are differential signals.

[0012] According to a second aspect of the present application, a chip is provided, comprising the radio frequency front-end amplifier circuit described in any one of the first aspects of the present application.

[0013] According to a third aspect of the present application, an electronic device is provided, comprising the radio frequency front-end amplifier circuit described in any one of the first aspects of the present application.

[0014] According to the fourth aspect of the present application, a signal path configuration method is provided, which is applied to the RF front-end amplifier circuit described in any one of the first aspects of the present application, and the configuration method includes: obtaining an input-output correspondence table, the input-output correspondence table being used to describe the correspondence between the input voltage signal and the output voltage signal; and configuring the signal path in the RF front-end amplifier circuit according to the input-output correspondence table.

[0015] As can be seen from the above description, the RF front-end amplifier circuit of the present application effectively amplifies the input voltage signal through the low-noise amplifier module and converts it into one or more intermediate current signals. The voltage output module then combines the intermediate current signals output by each low-noise amplifier module and converts them into one or more output voltage signals. Furthermore, the input voltage signal at any input terminal can be converted into an output voltage signal at any one or more output terminals, thereby enabling simultaneous reception of multiple channels from multiple signal sources. The noise generated by the matching amplifier circuit in the low-noise amplifier module, as the primary noise source in the entire RF front-end amplifier circuit, has opposite phases after passing through the first and second processing units. After current merging, the noise on each signal path can be fully or partially eliminated. This enables the RF front-end amplifier circuit of the present application to achieve excellent noise performance. The implementation of noise cancellation in the matching amplifier circuit, the current mirror design in the first processing unit, and the suppression of second transconductance stage noise by the matching amplifier circuit in the second processing unit, enable the RF front-end amplifier circuit of the present application to have good design freedom, achieving high linearity and / or low power consumption. Furthermore, the mutual influence between each signal path from input to output in the RF front-end amplifier circuit of the present application is minimal. Furthermore, the RF front-end amplifier circuit of the present application can achieve single-ended to differential conversion without the use of a balun, effectively reducing costs. The RF front-end amplifier circuit described in the present application is particularly suitable for broadband scenarios and is a multi-input multi-output broadband low-noise RF front-end amplifier with noise cancellation. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Shown is a structural schematic diagram of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0017] Figure 2 Shown is a circuit diagram of the first processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0018] Figure 3 Shown is a circuit diagram of the first processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0019] Figure 4 Shown is a circuit diagram of the second processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0020] Figure 5 Shown is a circuit diagram of the second processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0021] Figure 6 Shown is a circuit diagram of a low-noise amplifier module in a specific embodiment of the RF front-end amplifier circuit described in this application.

[0022] Figure 7 Shown is a circuit diagram of a voltage output module in a specific embodiment of the RF front-end amplifier circuit described in this application.

[0023] Figure 8A Shown is a circuit diagram of the first processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0024] Figure 8B Shown is a circuit diagram of the second processing unit of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0025] Figure 9A Shown is a circuit diagram of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0026] Figure 9B Shown is a circuit diagram of the RF front-end amplifier circuit described in this application in a specific embodiment.

[0027] Figure 10 Shown is a schematic structural diagram of the chip described in this application in a specific embodiment.

[0028] Figure 11 Shown is a flow chart of a signal path configuration method described in this application in a specific embodiment.

[0029] Component number description

[0030] 1 RF front-end amplifier circuit

[0031] 11 Low noise amplifier module

[0032] 111 First Amplifier

[0033] 1111 Third transconductance stage

[0034] 1112 First MOSFET

[0035] 112 First transconductance stage

[0036] 121 Matching Amplifier Circuit

[0037] 1211 Second Amplifier

[0038] 1212 Feedback Circuit

[0039] 122 Second transconductance stage

[0040] 13 Voltage output module

[0041] 131 Current Merging Unit

[0042] 132 Current-voltage conversion unit

[0043] Steps S11-S12 DETAILED DESCRIPTION

[0044] The following describes the embodiments of the present application through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless they conflict.

[0045] It should be noted that the diagrams provided in the following embodiments are merely schematic illustrations of the basic concept of the present application. The diagrams only show components relevant to the present application and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, quantity, and proportion of each component may be arbitrarily changed, and the component layout may also be more complex. In addition, in this document, relational terms such as "first," "second," etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0046] Traditional RF front-ends can often only realize signal reception on a single channel under a single RF input. Therefore, the RF front-end amplifier circuit used inside them is also designed for RF front-ends with a single input and a single output. It is difficult to apply to RF front-ends with a multi-input and multi-output structure.

[0047] Existing receiver systems typically employ discrete device solutions, low-noise amplifiers with multiple radio frequency (RF) switches, or common-source current splitting and combining circuits to achieve simultaneous signal reception on multiple channels from multiple signal sources. However, these existing solutions present challenges that hinder their application in multi-input, multi-output (MIMO) scenarios. Discrete device solutions often have significant performance limitations, which restrict the overall receiver performance. Furthermore, discrete devices occupy a significant amount of PCB board space, increasing design costs. LNA solutions with multiple RF switches require inserting RF switches between several first-stage LNAs and several second-stage LNAs. These switches are controlled to transmit one or more input signals through the amplifiers to one or more outputs. However, these RF switches introduce signal loss, degrading the noise figure of the overall receiver system. Furthermore, when switches are inserted at circuit nodes requiring large voltage swings, such as the output nodes of the first-stage LNAs, signal linearity is limited, resulting in signal distortion. The common-source current splitting and merging circuit requires source inductance degeneration to achieve impedance matching, which limits the application of this solution in broadband scenarios. In addition, when the signal at a certain input end needs to be transmitted to multiple output ends, current splitting will lead to a deterioration of the signal-to-noise ratio and noise of the signal path.

[0048] To address the above issues, the present application provides a radio frequency front-end amplifier circuit. The radio frequency front-end amplifier circuit utilizes at least two low-noise amplifier modules to amplify one or more input voltage signals and convert them into one or more intermediate current signals. Furthermore, the circuit utilizes a voltage output module to combine the intermediate current signals and convert them into one or more output voltage signals, thereby converting one or more input voltage signals into one or more output voltage signals. Therefore, the radio frequency front-end amplifier circuit described in the present application is applicable to radio frequency front-ends with a multi-input, multi-output (MIMO) structure.

[0049] In one embodiment of the present application, the RF front-end amplifier circuit includes at least two low-noise amplifier modules and one voltage output module. The number of the low-noise amplifier modules depends on the number of RF signal sources that need to be received. Preferably, the low-noise amplifier module is implemented by a low-noise transconductance amplifier. Each of the low-noise amplifier modules is used to amplify the input voltage signal of the RF front-end amplifier circuit and convert it into one or more intermediate current signals. Specifically, the RF front-end amplifier circuit has two or more input terminals and two or more output terminals, wherein each input terminal corresponds to one input voltage signal and each output terminal corresponds to one output voltage signal. The number of input terminals of the RF front-end amplifier circuit is the same as the number of the low-noise amplifier modules, and the input terminals of the RF front-end amplifier circuit are connected to the low-noise amplifier modules in a one-to-one correspondence. In a specific application, an input voltage signal is input into the corresponding low-noise amplifier module through an input terminal of the RF front-end amplifier circuit, and thereafter, the low-noise amplifier module amplifies the input voltage signal and converts it into one or more intermediate current signals. For example, refer to Figure 1 An input voltage signal Vin-1 is input from the input end of the RF front-end amplifier circuit 1 to a low-noise amplifier module 11. The low-noise amplifier module 11 then amplifies the input voltage signal Vin-1 and converts it into multiple intermediate current signals Imid-1-1, Imid-1-2, ..., Imid-1-n, where n is an integer greater than or equal to 2. In a specific application, the number of intermediate current signals output by any one of the low-noise amplifier modules 11 is less than or equal to the number of output ends of the RF front-end amplifier circuit 1.

[0050] The voltage output module is connected to each of the low-noise amplification modules and is used to merge the intermediate current signals output by each of the low-noise amplification modules and convert them into one or more output voltage signals. For example, the voltage output module 13 merges the intermediate current signals to obtain n output voltage signals Vout-1, Vout-2, ..., Vout-n.

[0051] According to the above description, the RF front-end amplifier circuit described in this embodiment can process one or more RF input voltage signals to obtain one or more output voltage signals. Therefore, the RF front-end amplifier circuit is suitable for multi-input and multi-output scenarios.

[0052] Furthermore, the input of the voltage output module in this embodiment is a current signal rather than a voltage signal. Therefore, the voltage output module has a low input impedance. Therefore, the voltage output module can receive intermediate current signals output by multiple low-noise amplifier modules with little or no signal loss and distortion at operating frequencies up to several gigahertz. Furthermore, the low input impedance minimizes the interaction between different signal paths. The signal path refers to the path from one input voltage signal to its corresponding output voltage signal.

[0053] In one embodiment of the present application, any of the low-noise amplification modules includes a first processing unit and a second processing unit, and the intermediate current signal includes one or more first current signals output by the first processing unit, and includes one or more second current signals output by the second processing unit. Specifically, the input ends of the first processing unit and the second processing unit are connected at a common end, and an input voltage input to the low-noise amplification module is input to the first processing unit and the second processing unit via the common end. The first processing unit is used to amplify the input voltage signal input to the low-noise amplification module and convert it into one or more first current signals. The second processing unit is used to achieve impedance matching of the input end of the low-noise amplification module, and to amplify the input voltage signal input to the low-noise amplification module and convert it into one or more second current signals. The number of the second current signals is the same as the number of the first current signals.

[0054] In one embodiment of the present application, the first processing unit includes a first amplifier and at least one switchable first transconductance stage. The first amplifier is used to amplify an input voltage signal input to the low-noise amplification module to obtain a first voltage signal; preferably, the first amplifier is a low-noise voltage amplifier (Low Noise Amplifier, LNA). Each first transconductance stage is connected to the first amplifier and is used to convert the first voltage signal into a first current signal. The output of all first transconductance stages is the output of the first processing unit. The first transconductance stage can be implemented using MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or other methods, which are not limited here. In specific applications, the number of the first transconductance stages is configured so that the first processing unit can output any number of first current signals. For example, refer to Figure 2The first amplifier (A1) 111 amplifies an input voltage signal Vin-1 to obtain a first voltage signal V1. The first transconductance stage 112 includes GM1-1-1, GM1-1-2, ..., GM1-1-n. The first transconductance stage GM1-1-1 converts the first voltage signal V1 into a first current signal Iom1-1. The second transconductance stage GM1-1-2 converts the first voltage signal V1 into a first current signal Iom1-2, and so on.

[0055] According to the above description, the first processing unit of this embodiment has one or more first current paths, each of which includes a first transconductance stage and corresponds to a first current signal. The first transconductance stages used in this embodiment all have switchable capabilities, and have at least two states, on and off, for controlling the on and off of the first current path. For example, Figure 2 A first current path includes a first transconductance stage GM1-1-1 and corresponds to a first current signal Iom1-1. The on / off of the first current path can be controlled by switching the first transconductance stage GM1-1-1: when the first transconductance stage GM1-1-1 is on, the first current path outputs the first current signal Iom1-1; when the first transconductance stage GM1-1-1 is off, the first current path does not output a current signal. Preferably, the switching states of the first transconductance stages are independent of each other. For a first processing unit having n first transconductance stages, by controlling the switching states of the first transconductance stages, the first processing unit can convert an input voltage signal into any number of first current signals between 0 and n, and can output one first current signal through any first current path, or output two or more first current signals through any two or more first current paths.

[0056] In one embodiment of the present application, the first amplifier includes a third transconductance stage and a first MOSFET, wherein the gate and drain of the first MOSFET are connected to form a diode. The third transconductance stage is used to convert an input voltage signal input to the low-noise amplifier module into a third current signal. The first MOSFET forms the first voltage signal at its gate based on the third current signal. The gate of the first MOSFET is connected to each of the first transconductance stages to form one or more corresponding current mirrors, and the third current signal forms one or more first current signals through each of the current mirrors. For example, refer to Figure 3In the first amplifier 111, the third transconductance stage 1111 converts the input voltage signal Vin-1 of the low-noise amplifier module into a third current signal I3. This third current signal I3 flows into the common connection terminal of the gate and drain of the MOSFET 1112, generating the first voltage signal V1 at this terminal. The first MOSFET 1112 and the first transconductance stage GM1-1-1 form a current mirror, the output of which is a first current signal Iom1-1. The second MOSFET 1112 and the first transconductance stage GM1-1-2 form another current mirror, the output of which is another first current signal Iom1-2, and so on.

[0057] In this embodiment, the first MOSFET is connected to each of the first transconductance stages to form one or more corresponding current mirrors. The third current signal output by the third transconductance stage is converted within the current mirror into a voltage signal across the diode-connected MOSFET. This voltage signal is then converted into one or more first current signals by the first transconductance stage within each of the current mirrors and output. Although the output of the first amplifier in this embodiment is a voltage signal, the presence of the current mirror ensures that the linearity of the signal is not degraded, thereby ensuring that the first transconductance stage in this embodiment has good linearity.

[0058] It should be noted that, in this embodiment, the first amplifier is introduced by taking a single-ended signal as an example. In actual applications, the structure of the first amplifier can also be adjusted as required to enable it to have the ability to process differential signals.

[0059] In one embodiment of the present application, the second processing unit includes a matching amplifier circuit and at least one switchable second transconductance stage. The matching amplifier circuit is used to achieve impedance matching at the input end of the low-noise amplifier module, and amplify the input voltage signal input to the low-noise amplifier module to obtain a second voltage signal, and convert the second voltage signal into a feedback signal and feed it back to the input end of the low-noise amplifier module. Each second transconductance stage is connected to the matching amplifier circuit, which is used to convert the second voltage signal into a second current signal, and the output of all second transconductance stages is the output of the second processing unit. The second transconductance stage can be implemented using MOSFET or other methods. In specific applications, the second processing unit can output any number of second current signals by configuring the number of the second transconductance stages. It should be noted that during the configuration process, the number of the second current signals should be the same as the number of the first current signals. For example, please refer to Figure 4The matching amplifier circuit 121 is used to achieve impedance matching at the input end of the second processing unit, and amplify the input voltage signal Vin-1 to obtain a second voltage signal V2, and convert the second voltage signal into a feedback signal FB and feed it back to the input end of the low-noise amplifier module; the second transconductance stage 122 includes GM1-2-1, GM1-2-2,..., GM1-2-n, and the second transconductance stage GM1-2-1 converts the second voltage signal V2 into a second current signal Ioa1-1, the second transconductance stage GM1-2-2 converts the second voltage signal V2 into another second current signal Ioa1-2, and so on.

[0060] According to the above description, in this embodiment, the second processing unit has one or more second current paths, each of which includes a second transconductance stage and corresponds to a second current signal. The second transconductance stages used in this embodiment have switchable capabilities, and have at least two states, on and off, for controlling the on and off of the second current path. For example, Figure 4 A second current path includes a second transconductance stage GM1-2-1 and corresponds to a second current signal Ioa1-1. The on / off state of the second current path can be controlled by switching the second transconductance stage GM1-2-1: when the second transconductance stage GM1-2-1 is on, the second current path outputs the second current signal Ioa1-1; when the second transconductance stage GM1-2-1 is off, the second current path does not output a current signal. Preferably, the switching states of the second transconductance stages are independent of each other. For a second processing unit having n second transconductance stages, by controlling the switching states of the second transconductance stages, the second processing unit can convert an input voltage signal into any number of second current signals between 0 and n, and can output a second current signal through any second current path, or output two or more second current signals through any two or more second current paths.

[0061] In this embodiment, the matching amplifier circuit can amplify the voltage signal at the input end. Therefore, the matching amplifier circuit will suppress the noise of the second transconductance stage, so that the noise of the second transconductance stage will not become the main noise in the RF front-end amplifier circuit, thereby providing sufficient design freedom for the design of the second transconductance stage to allow the second transconductance stage to be designed to have higher linearity.

[0062] In one embodiment of the present application, the matching amplifier circuit includes a second amplifier and a feedback circuit. The second amplifier is used to amplify an input voltage signal input to the low-noise amplifier module to obtain a second voltage signal; the feedback circuit is connected to the second amplifier and the input end of the low-noise amplifier module, and is used to convert the second voltage signal into the feedback signal and feed it back to the input end of the low-noise amplifier module. For example, see Figure 5 Second amplifier (A2) 1211 amplifies input voltage signal Vin-1 to generate a second voltage signal V2. Feedback circuit 1212 converts second voltage signal V2 into feedback signal FB and feeds it back to the input of the second processing unit. Second amplifier 1211 and feedback circuit 1212 jointly achieve input impedance matching for the low-noise amplifier module.

[0063] In practical applications, the matching amplifier circuit will generate noise, which is the main noise in the RF front-end amplifier circuit. The second voltage signal includes all or part of the noise voltage generated by the matching amplifier circuit. On the one hand, the noise voltage reaches the input end of the low-noise amplifier module through the feedback circuit, and forms a first noise current after passing through the first transconductance stage of the first processing unit; on the other hand, the noise voltage forms a second noise current after passing through the second transconductance stage of the second processing unit. In order to reduce or even eliminate the noise generated in the matching amplifier circuit, in one embodiment of the present application, the circuit is reasonably designed to ensure that the phases of the first noise current and the second noise current are opposite. For example, Figure 6 The phases of the first noise current and the second noise current in the low noise amplifier module are opposite. Figure 6 This is only an example of the low-noise amplification module. When the low-noise amplification module is implemented in other ways, the phase of the first noise current and / or the second noise current can be adjusted by using components such as an inverting amplifier in the circuit to ensure that the phase of the first noise current is opposite to that of the second noise current.

[0064] In one embodiment of the present application, the voltage output module includes at least one current merging unit and at least one current-voltage conversion unit, and the number of the current merging units and the current-voltage conversion units is the same and they are connected one-to-one. The number of the current merging units depends on the number of tuning paths required in the system. Preferably, the number of the current merging units is the same as the number of the first current signals output by each of the low-noise amplification modules. At this time, the current merging units correspond one-to-one to the first current signals output by each of the low-noise amplification modules, and correspond one-to-one to the second current signals output by each of the low-noise amplification modules. Each of the current merging units is used to merge its corresponding first current signal and second current signal to obtain a fourth current signal. For example, refer to Figure 7 The current merging unit 131 corresponds to the first current signal Iom1-1 output by the first low-noise amplification module, the first current signal Iom2-1 output by the second low-noise amplification module, ..., and the first current signal Iomp-1 output by the p-th low-noise amplification module, and corresponds to the second current signal Ioa1-1 output by the first low-noise amplification module, the second current signal Ioa2-1 output by the second low-noise amplification module, ..., and the second current signal Ioap-1 output by the p-th low-noise amplification module. At this time, the current merging unit 131 merges the first current signals Iom1-1, Iom2-1, ..., and Iomp-1 with the second current signals Ioa1-1, Ioa2-1, ..., and Ioap-1 to obtain a fourth current signal I4-1. Wherein, p is an integer greater than or equal to 2.

[0065] In particular, when the first noise current and the second noise current exist in the RF front-end amplifier circuit, the current merging unit is further configured to merge the first noise current and the second noise current. Because the first noise current and the second noise current have opposite phases, merging the two currents can partially or completely cancel out the first noise current and the second noise current, thereby reducing or even eliminating noise in the RF front-end amplifier circuit.

[0066] Each of the current-to-voltage conversion units is connected to a corresponding current merging unit, for example, which can be implemented using a resistive load. The fourth current signal flows through the current-to-voltage conversion unit to form the output voltage signal. Specifically, each of the current-to-voltage conversion units is used to convert one of the fourth current signals and obtain one output voltage signal. For example, for the fourth current signal I4-1, the current-to-voltage conversion unit 132 converts it into one output voltage signal Vout-1. The output of all current-to-voltage conversion units is the output of the RF front-end amplifier circuit.

[0067] According to the above description, the RF front-end amplifier circuit described in this embodiment can merge the first noise current and the second noise current through the current merging unit, so that the first noise current and the second noise current are partially or completely offset, which is beneficial to reducing the noise generated by the second amplifier A2. At this time, the second amplifier has sufficient design freedom, thereby ensuring that the second amplifier can be designed to have better performance indicators, such as higher linearity or lower power consumption.

[0068] In one embodiment of the present application, the first current signal and the second current signal are single-ended signals, or the first current signal and the second current signal are differential signals. When the first current signal and the second current signal are differential signals, the RF front-end amplifier circuit can realize a low-noise transconductance amplifier with single-ended input and differential output. In this case, the RF front-end amplifier circuit does not need to use a balun to realize differential signal reception, which is conducive to reducing costs. In addition, in this embodiment, the noise from the matching amplifier circuit is eliminated in differential mode. This circuit structure is implemented in a differential form, which can ensure that the circuit has good power supply rejection, common-mode rejection, and second-order linearity.

[0069] Specifically, when the first current signal and the second current signal are differential current signals, an implementation of the first processing module is as follows: Figure 8A As shown. The third transconductance stage GM3 has a single-ended input and a differential output. Its output current is converted into a voltage across the diode-connected MOSFET and then converted back into a current through a current mirror. Due to the characteristics of the current mirror, although the output of the first amplifier A1 is a voltage signal, the linearity of the signal in the first processing module will not be reduced. One implementation of the second processing module is as follows. Figure 8B As shown, the feedback circuit is implemented in a differential input and single-ended output manner.

[0070] See also Figure 9A In one embodiment of the present application, the first current signal and the second current signal are single-ended signals. The RF front-end amplifier circuit is used to amplify one or more input voltage signals and convert them into one or more voltage signals for output. The RF front-end amplifier circuit includes p low-noise amplifier modules, where p is greater than or equal to 1, and includes a voltage output module. Each low-noise amplifier module is used to convert one input voltage signal into n first current signals and n second current signals, where n is greater than or equal to 1. The voltage output module is used to convert the intermediate current signals output by each low-noise amplifier module into one or more output voltage signals.

[0071] Specifically, in this embodiment, each low-noise amplification module includes a first processing unit and a second processing unit. The first processing unit includes a first amplifier 111 and n switchable first transconductance stages. The first amplifier is configured to amplify an input voltage signal input to the low-noise amplification module to obtain a first voltage signal. Each first transconductance stage is configured to convert the first voltage signal into a first current signal. Therefore, the first processing unit has n first current paths, and the output of the first processing unit is n first current signals.

[0072] In this embodiment, the second processing unit includes a matching amplifier circuit 121 consisting of a second amplifier 1211 and a feedback circuit 1212, and includes n switchable second transconductance stages. The matching amplifier circuit is used to achieve impedance matching at the input end of the low-noise amplifier module. The second amplifier 1211 is used to amplify an input voltage signal input to the low-noise amplifier module to obtain a second voltage signal. Each second transconductance stage is used to convert the second voltage signal into a second current signal. Therefore, there are n second current paths in the second processing unit, and the output of the second processing unit is n second current signals.

[0073] The voltage output module 13 includes n current merging units and n current-to-voltage conversion units, wherein each current merging unit corresponds to p first current signals and p second current signals, and is configured to merge the corresponding p first current signals and p second current signals to obtain a fourth current signal. The current-to-voltage conversion units are connected to the current merging units in a one-to-one correspondence, and are configured to convert each fourth current signal into an output voltage signal.

[0074] In this embodiment, the second voltage signal includes part or all of the noise voltage generated by the impedance matching amplifier circuit. The noise voltage reaches the input end of the low-noise amplifier module through the feedback circuit and forms a first noise current after passing through the first processing unit; the noise voltage forms a second noise current after passing through the second transconductance stage. The RF front-end amplifier circuit described in this embodiment can ensure that the second noise current is in opposite phase to the first noise current. Therefore, after passing through the current merging unit, the first noise current and the second noise current will partially or completely cancel each other out. Preferably, the gain of the first transconductance stage and the second transconductance stage is adjustable. In specific applications, the gain of the first transconductance stage and / or the second transconductance stage can be adjusted to achieve complete cancellation of the first noise current and the second noise current.

[0075] In addition, in this embodiment, the first transconductance stage and the second transconductance stage are both switchable transconductance stages. In specific applications, by adjusting the switching states of the first transconductance stage and the second transconductance stage, the RF front-end amplifier circuit can achieve the following: convert any one or more input voltage signals into 0 to n output voltage signals, and output the input voltage signal of any input terminal through any one or more output terminals. For example, the RF front-end amplifier circuit can convert the input voltage signal Vin-1 into 1 output voltage signal, which can be output through any output terminal; the RF front-end amplifier circuit can convert the input voltage signal Vin-1 into n output voltage signals, which can be output through all n output terminals; and the RF front-end amplifier circuit can convert the input voltage signals Vin-1 and Vin-p into 4 output voltage signals, which can be output through any 4 output terminals. The on-off state of the current path (including the first current path and the second current path) in the RF front-end amplifier circuit described in this embodiment is controlled by the corresponding first transconductance stage and the second transconductance stage. The switchable first transconductance stage and the current merging unit jointly realize the distribution of input voltage signals of different input ends to multiple output ends, thereby realizing the MIMO function. In this process, there is no need to use an RF switch, which is conducive to reducing signal loss, reducing noise and preventing the degradation of linear performance.

[0076] The current merging unit described in this embodiment can be designed to have a low input impedance to facilitate receiving the first and second current signals from the preceding stage. This low impedance ensures that the current merging unit can receive multiple first and second current signals without significant signal loss or distortion. This low impedance also enables the current merging unit to operate at frequencies up to several gigahertz. Furthermore, this low impedance minimizes the mutual influence between different current paths, ensuring that the noise and impedance characteristics of one path do not significantly affect other paths.

[0077] In addition, this embodiment combines the first noise current and the second noise current with opposite phases so that the two can partially or completely cancel each other out, thereby effectively reducing the noise of the corresponding signal path in the entire circuit and providing sufficient design freedom for the circuit design.

[0078] See also Figure 9BThe RF front-end amplifier circuit can also operate in differential mode, converting single-ended input signals into differential output signals. The thick line represents the differential signal path, while the thin line represents the single-ended signal path. The RF front-end amplifier circuit of this embodiment eliminates the need for a balun, reducing costs. Furthermore, noise from the matching amplifier circuit is eliminated in differential mode, which also ensures good power supply rejection, common-mode rejection, and second-order linearity.

[0079] Based on the above description of the RF front-end amplifier circuit, this application also provides a chip. Figure 10 In one embodiment of the present application, the chip includes at least some of the components of the RF front-end amplifier circuit described in the present application. For example, the chip may include the entire RF front-end amplifier circuit, or may only include the low-noise amplifier module of the RF front-end amplifier circuit. The chip may be a marketable active device formed by packaging an RF front-end amplifier circuit manufactured on a wafer using semiconductor technology; or it may be a marketable active device formed by packaging the RF front-end amplifier circuit using PCB packaging technology.

[0080] Based on the above description of the RF front-end amplifier circuit, the present application also provides an electronic device, which includes the RF front-end amplifier circuit described in the present application, and the electronic device includes but is not limited to a satellite set-top box.

[0081] Based on the above description of the RF front-end amplifier circuit, the present application also provides a signal path configuration method, which is applied to Figure 1 、 Figure 9A or Figure 9B The RF front-end amplifier circuit shown is used to configure the signal path in the RF front-end amplifier circuit. Figure 11 In one embodiment of the present application, the configuration method includes:

[0082] S11: Obtain an input-output correspondence table. The input-output correspondence table is used to describe the signal path from the input end to the output end, that is, the correspondence between the input voltage signal and the output voltage signal. In specific applications, the user can configure the input-output correspondence table according to actual needs. For an RF front-end amplifier circuit with p input ends and n output ends, Table 1 shows an example of the input-output correspondence table of the RF front-end amplifier circuit.

[0083] Table 1 Input and output correspondence table

[0084] Vin-1 Vin-2 Vin-3 … Vin-p Vout-1 1 0 0 … 0 Vout-2 0 1 0 … 0 Vout-3 1 0 0 … 0 … … … … … … Vout-n-1 0 0 1 … 0 Vout-n 0 0 0 … 1

[0085] It can be seen from Table 1 that the signal paths in the RF front-end amplifier circuit include: a signal path from the input voltage Vin-1 to the output voltages Vout-1 and Vout-3, a signal path from the input voltage Vin-2 to the output voltage Vout-2, a signal path from the input voltage Vin-3 to the output voltage Vout-n-1, ..., a signal path from the input voltage Vin-p to the output voltage Vout-n.

[0086] S12, configuring the signal path in the RF front-end amplifier circuit according to the input-output correspondence table. In particular, when the RF front-end amplifier circuit uses a first transconductance stage to convert the first voltage signal into a first current signal, and uses a second transconductance stage to convert the second voltage signal into a second current signal, for example Figure 9A or Figure 9B In the circuit structure shown, step S12 configures a transconductance module control array according to the input-output correspondence table, and controls the on / off states of the first transconductance stage and the second transconductance stage according to the transconductance module control array, thereby realizing the required signal path. Specifically, for an RF front-end amplifier circuit having p input terminals and n output terminals, the transconductance module control array is an n×p matrix, with the number of rows corresponding to the n output terminals and the number of columns corresponding to the p input terminals, and each element thereof is used to control the on / off states of a signal path. For any signal path, it includes a first transconductance stage and a second transconductance stage. The signal path is in the on state only when both the first transconductance stage and the second transconductance stage are in the on state. Therefore, the on / off states of the first transconductance stage and the second transconductance stage in the RF front-end amplifier circuit can be controlled according to the transconductance module control array, thereby realizing the configuration of the signal path.

[0087] Table 2 shows an example of a transconductance module control array. The signal path from input voltage Vin-1 to output voltage Vout-1 includes a first transconductance stage GM1-1-1 and a second transconductance stage GM1-2-1. The on and off states of the first and second transconductance stages GM1-1-1 and GM1-2-1 can be controlled by GM1-1 in the transconductance module control array. For example, when GM1-1 is 0, both the first and second transconductance stages GM1-1-1 and GM1-2-1 are controlled to be off, disconnecting the signal path from input voltage Vin-1 to output voltage Vout-1. When GM1-1 is 1, both the first and second transconductance stages GM1-1-1 and GM1-2-1 are controlled to be on, connecting the signal path from input voltage Vin-1 to output voltage Vout-1.

[0088] Table 2 Transconductance module control array

[0089] GM1-1 GM2-1 GM3-1 … GMp-1 GM1-2 GM2-2 GM3-2 … GMp-2 GM1-3 GM2-3 GM3-3 … GMp-3 … … … … … GM1-n-1 GM2-n-1 GM3-n-1 … GMp-n-1 GM1-n GM2-n GM3-n … GMp-n

[0090] The protection scope of the signal path configuration method described in this application is not limited to the execution order of the steps listed in this embodiment. All solutions implemented by adding, reducing, or replacing steps in the prior art based on the principles of this application are included in the protection scope of this application.

[0091] The present application proposes a radio frequency front-end amplifier circuit; the radio frequency front-end amplifier circuit can simultaneously achieve low noise, broadband impedance matching and good linearity in all signal receiving paths. The radio frequency front-end amplifier circuit achieves noise cancellation by superimposing a first current noise and a second current noise of opposite phases. This noise cancellation is effective for each signal path, thereby being able to achieve design freedom of low noise and high linearity at the same time. Moreover, the radio frequency front-end amplifier circuit described in the present application does not require the use of an radio frequency switch, which is beneficial for preventing the degradation of noise and linearity performance. In addition, the interaction between different signal paths in the radio frequency front-end amplifier circuit described in the present application is very small, and the noise and impedance characteristics of one path have little effect on other paths.

[0092] In summary, the present invention effectively overcomes various shortcomings of the prior art and has high industrial utilization value.

[0093] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical concepts disclosed in this application shall be covered by the claims of this application.

Claims

1. A radio frequency front-end amplifier circuit, characterized in that: The RF front-end amplifier circuit is used to amplify one or more input voltage signals and convert them into one or more output voltage signals, and includes: At least two low-noise amplification modules; each of the low-noise amplification modules is used to amplify one input voltage signal and convert it into one or more intermediate current signals; a voltage output module connected to each of the low-noise amplification modules, configured to combine the intermediate current signals output by each of the low-noise amplification modules and convert the combined signals into one or more output voltage signals; The intermediate current signal includes a first current signal, and the low-noise amplification module includes a first processing unit, and the first processing unit is used to amplify an input voltage signal input to the low-noise amplification module and convert it into one or more first current signals; The first processing unit includes a first amplifier and at least one switchable first transconductance stage, the first amplifier being configured to amplify an input voltage signal input to the low-noise amplifier module to obtain a first voltage signal, and each first transconductance stage being connected to the first amplifier and configured to convert the first voltage signal into a first current signal; The first amplifier includes a third transconductance stage and a first MOSFET. The third transconductance stage is used to convert an input voltage signal input to the low-noise amplification module into a third current signal. The gate and drain of the first MOSFET are connected, and its gate is connected to each of the first transconductance stages to form at least one current mirror, and its drain is connected to the third transconductance stage. The first MOSFET forms the first voltage signal at its gate based on the third current signal.

2. The radio frequency front-end amplifier circuit according to claim 1, wherein: The intermediate current signal further includes a second current signal, and the low-noise amplification module further includes: The second processing unit is used to achieve impedance matching at the input end of the low-noise amplifier module, and to amplify an input voltage signal input to the low-noise amplifier module and convert it into one or more second current signals; the number of the second current signals is the same as the number of the first current signals.

3. The radio frequency front-end amplifier circuit according to claim 2, wherein: The second processing unit includes: a matching amplifier circuit, configured to achieve impedance matching at the input end of the low-noise amplifier module, amplify an input voltage signal input to the low-noise amplifier module to obtain a second voltage signal, convert the second voltage signal into a feedback signal, and feed the feedback signal back to the input end of the low-noise amplifier module; At least one switchable second transconductance stage, each of the second transconductance stages is connected to the matching amplifier circuit, and is used to convert the second voltage signal into a second current signal.

4. The radio frequency front-end amplifier circuit according to claim 3, characterized in that: The matching amplifier circuit comprises: a second amplifier, configured to amplify an input voltage signal input to the low-noise amplification module to obtain a second voltage signal; The feedback circuit is connected to the second amplifier and the input end of the low-noise amplifier module, and is used to convert the second voltage signal into the feedback signal and feed it back to the input end of the low-noise amplifier module.

5. The radio frequency front-end amplifier circuit according to claim 2, wherein: The voltage output module includes: at least one current merging unit; the current merging unit is configured to merge the first current signal and the second current signal output by each of the low-noise amplification modules to obtain a fourth current signal; At least one current-voltage conversion unit is connected to the corresponding current merging unit respectively; the at least one current-voltage conversion unit is used to convert the fourth current signal into the output voltage signal.

6. The radio frequency front-end amplifier circuit according to claim 2, wherein: The first current signal and the second current signal are single-ended signals; or The first current signal and the second current signal are differential signals.

7. A chip, characterized in that: The chip includes the radio frequency front-end amplifier circuit according to any one of claims 1 to 6.

8. An electronic device, characterized in that: The electronic device includes the radio frequency front-end amplifier circuit according to any one of claims 1 to 6.

9. A method for configuring a signal path, characterized in that: Applied to the RF front-end amplifier circuit according to any one of claims 1 to 6, the signal path configuration method includes: Obtaining an input-output correspondence table, wherein the input-output correspondence table is used to describe the correspondence between the input voltage signal and the output voltage signal; The signal path in the RF front-end amplifier circuit is configured according to the input-output correspondence table.

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