A driving circuit, a light-emitting panel, and a display device

Abstract

This invention discloses a driving circuit, a light-emitting panel, and a display device for driving a light-emitting module to emit light. The driving circuit includes a driving transistor, a clamping module, a first power supply terminal, a second power supply terminal, and a display signal terminal. The light-emitting module is electrically connected to the first power supply terminal and the drain of the driving transistor. The source of the driving transistor is coupled to the second power supply terminal at a first node. The gate of the driving transistor is electrically connected to the display signal terminal. The driving transistor provides a driving current to the light-emitting module according to a first power supply signal from the first power supply terminal and a display signal from the display signal terminal. The clamping module is electrically connected to the gate of the driving transistor and the first node. The clamping module stabilizes the gate potential of the driving transistor within a first preset range. By adopting the above technical solution, the driving transistor can be prevented from being damaged by static electricity discharge, and the stability of the gate potential of the driving transistor can be ensured, thereby improving the light emission accuracy of the light-emitting module.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a driving circuit, a light-emitting panel, and a display device. Background Technology

[0002] With the popularization of the Internet and the continuous development of display technology, high-quality display devices have become an important feature of many consumer electronics products.

[0003] Display devices typically include a light-emitting panel for providing light signals. This panel usually houses a driving circuit and light-emitting elements. The driving transistor in the driving circuit drives the light-emitting elements to emit light. Due to the structure and performance of the transistor, a parasitic capacitance forms between the gate and source of the driving transistor. Static electricity, easily generated during production, assembly, testing, handling, and storage, causes the gate of the driving transistor to accumulate charge in space, stored in its parasitic capacitance. When the gate of the driving transistor comes into contact with a conductive object, a discharge path is formed, releasing the accumulated charge and creating a large, instantaneous current surge. This surge can cause the driving transistor to break down, resulting in irreversible damage and significantly impacting the yield rate and display effect of the light-emitting panel. Summary of the Invention

[0004] The present invention provides a driving circuit, a light-emitting panel, and a display device to provide electrostatic protection for the driving transistor and improve the uniformity of the display.

[0005] According to one aspect of the present invention, a driving circuit is provided for driving a light-emitting module to emit light, the driving circuit comprising: a driving transistor, a clamping module, a first power supply terminal, a second power supply terminal, and a display signal terminal;

[0006] The light-emitting module is electrically connected to the first power supply terminal and the drain of the driving transistor, respectively; the source of the driving transistor is coupled to the second power supply terminal at the first node; the gate of the driving transistor is electrically connected to the display signal terminal; the driving transistor is used to provide driving current to the light-emitting module according to the first power supply signal of the first power supply terminal and the display signal of the display signal terminal.

[0007] The clamping module is electrically connected to the gate of the driving transistor and the first node, respectively; the clamping module is used to stabilize the gate potential of the driving transistor within a first preset range.

[0008] According to another aspect of the present invention, a light-emitting panel is provided, comprising: a plurality of first signal lines, a plurality of light-emitting modules, and a plurality of the above-described driving circuits arranged in an array;

[0009] At least a portion of the drive circuit located in the same column has its second power supply terminal electrically connected to the same first signal line.

[0010] According to another aspect of the present invention, a display device is provided, characterized in that it includes: the above-described light-emitting panel.

[0011] The technical solution of this invention, by electrically connecting a clamping module between the gate and source of a driving transistor, can stabilize the gate potential of the driving transistor within a first preset range. On the one hand, it can prevent the driving transistor from being damaged due to excessively high gate potential. That is, when the gate potential of the driving transistor increases instantaneously due to electrostatic discharge, the clamping module can control the release of charge at the gate of the driving transistor to reduce the gate circuit of the driving transistor and protect it. On the other hand, it can prevent the source potential of the driving transistor from affecting the gate potential of the driving transistor, ensuring the stability of the gate potential of the driving transistor. This ensures the stability and accuracy of the driving current provided by the driving transistor to the light-emitting module according to its gate potential, improves the reliability of the driving circuit, and thus ensures the light-emitting stability and accuracy of the light-emitting module. This, in turn, helps to improve the light-emitting uniformity of the light-emitting panel including the driving circuit and improve the display light-emitting effect of the light-emitting panel.

[0012] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a schematic diagram of the structure of a driving circuit in the prior art;

[0015] Figure 2 This is a schematic diagram of the structure of a light-emitting panel in the prior art;

[0016] Figure 3 This is a schematic diagram of a driving circuit provided in an embodiment of the present invention;

[0017] Figure 4 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention.

[0018] Figures 5 to 24 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention;

[0019] Figure 25 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of the present invention;

[0020] Figure 26 This is a schematic diagram of another light-emitting panel provided in an embodiment of the present invention;

[0021] Figure 27 This is a schematic diagram of another type of light-emitting panel provided in an embodiment of the present invention. Detailed Implementation

[0022] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0023] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0024] In light-emitting panels that include current-driven elements (light-emitting elements), a driving circuit is typically required to drive the light-emitting elements to emit light, such as... Figure 1 As shown, the existing driving circuit includes a driving transistor T1′ and a short-circuit resistor R0′ electrically connected between the gate and source of the driving transistor T1′. When the driving transistor needs to be turned on, the potential difference across the short-circuit resistor R0′ ensures that the gate-source voltage difference Vgs′ of the driving transistor T1′ is higher than its conduction threshold, so that the driving transistor T1′ can be successfully turned on. Furthermore, when the driving transistor T1′ is turned off, the gate potential and source potential of the driving transistor T1′ are kept consistent, avoiding the accumulation of charge between the gate and source and causing electrostatic damage.

[0025] Figure 2 This is a schematic diagram of the structure of a light-emitting panel in the prior art. Table 1 shows the structure of the panel. Figure 2 The corresponding parameter diagram, combined with Figure 1 , Figure 2 and Figure 3 As shown, when the driving transistor T1' is turned on, a current path is formed from the PVDD' terminal to the GND' terminal, allowing the current generated by the gate potential of the driving transistor T1' to supply the light-emitting element D0', thereby driving the light-emitting diode D0' to emit light. It can be seen that due to the setting of the shorting resistor R0', when the driving transistor T1' is turned on, the potential of node A' (the connection node between the source of the driving transistor T1' and the shorting resistor R0' and the signal line) increases, causing the gate-source voltage difference Vgs' of the driving transistor T1' to decrease, thus reducing the conduction degree of the driving transistor T1', resulting in a weakening of the light-emitting element D0's brightness, i.e., the brightness of the light-emitting element D0' is inaccurate. Additionally, refer to... Figure 2 The drive circuits located in the same row or column are electrically connected to the same signal line (only the drive circuits in the same column are illustrated in the figure as examples of being electrically connected to the same signal line), so that the power signal provided by the power chip 00 can be transmitted to each drive circuit through the signal line. The power signal can be a negative power signal PVEE′, which can be lower than the positive power signal at the PVDD′ terminal.

[0026] Since the impedance of a signal line is related to its resistivity, length, and cross-sectional area, with the same resistivity and cross-sectional area, the longer the signal line, the greater its impedance, and vice versa. If R1′ represents the impedance of the signal line, we can see that the impedance of the signal line corresponding to different locations of the drive circuit electrically connected to the same signal line is different, as shown in Table 1. The further the drive circuit is from the power chip 00, the longer the signal line required for its electrical connection to the power chip 00, and the greater the impedance of the corresponding signal line. This results in a larger potential difference between the connection node A′ of the drive circuit and the power signal PVEE′ provided by the power chip 00 (from drive circuit 01 to drive circuit 06). Conversely, the closer the drive circuit is to the power chip 00, the shorter the signal line required for its electrical connection to the power chip 00, and the lower the impedance of the corresponding signal line. The smaller the voltage difference, the smaller the potential difference between the connection node A′ of the driving circuit and the signal line and the power signal PVEE′ provided by the power chip 00 (from driving circuit 06 to driving circuit 01). Since the power signal PVEE′ provided by the power chip 00 is fixed, the greater the potential difference between the connection node A′ of the driving circuit and the power chip 00 and the power signal at the power chip 00 terminal, the higher the potential of the connection node. This results in a smaller gate-source voltage difference Vgs′ of the driving transistor T1′, which in turn causes the light-emitting element D0′ driven by the driving circuit that is farther away from the power chip 00 to have a lower brightness, resulting in an unbalanced display and poor display effect on the light-emitting panel. Furthermore, when each driving circuit drives multiple light-emitting elements, the PVDD' signal also increases to drive multiple light-emitting elements to emit light, causing the potential of node A' to increase accordingly. When the potential of node A' is higher than the gate voltage of driving transistor T1', it is easy to backflow through the short-circuit resistor R0' to the gate driving terminal of driving transistor T1', which can easily damage the driving IC connected to the gate driving terminal. Moreover, when driving transistor T1' is turned on, current always flows through the first resistor R1', resulting in a certain amount of useless power consumption and unavoidable heat generation.

[0027] Table 1

[0028] drive circuit 01 02 03 04 05 06 I(D0′) / A 0.01 0.01 0.01 0.01 0.01 0.01 R1 / Ω 10 20 30 40 50 60 VA / V 0.1 0.2 0.3 0.4 0.5 0.6 brightness 100 90 80 70 60 50

[0029] To address the aforementioned problems, this invention provides a driving circuit for driving a light-emitting module to emit light. The driving circuit includes: a driving transistor, a clamping module, a first power supply terminal, a second power supply terminal, and a display signal terminal. The light-emitting module is electrically connected to the first power supply terminal and the drain of the driving transistor, respectively. The source of the driving transistor is coupled to the second power supply terminal at a first node. The gate of the driving transistor is electrically connected to the display signal terminal. The driving transistor provides a driving current to the light-emitting module based on a first power supply signal from the first power supply terminal and a display signal from the display signal terminal. The clamping module is electrically connected to the gate of the driving transistor and the first node, respectively. The clamping module stabilizes the gate potential of the driving transistor within a first preset range.

[0030] By employing the above technical solution, a clamping module is electrically connected between the gate and source of the driving transistor. This clamping module can stabilize the gate potential of the driving transistor within a first preset range. On the one hand, it can prevent the driving transistor from being damaged due to excessively high gate potential. Specifically, when the gate potential of the driving transistor momentarily rises due to electrostatic discharge, the clamping module can control the release of charge at the gate of the driving transistor to reduce the gate circuit and protect the driving transistor. On the other hand, it can prevent the source potential of the driving transistor from affecting the gate potential, ensuring the stability of the gate potential. This ensures the stability and accuracy of the driving current provided by the driving transistor to the light-emitting module based on its gate potential, improving the reliability of the driving circuit. Consequently, it ensures the light-emitting stability and accuracy of the light-emitting module, which in turn improves the light-emitting uniformity of the light-emitting panel including the driving circuit and enhances the display light-emitting effect of the light-emitting panel.

[0031] The above is the core idea of ​​this invention. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention. The technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings.

[0032] Figure 3 This is a schematic diagram of a driving circuit provided in an embodiment of the present invention. Figure 4 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 3 or Figure 4 As shown, the driving circuit 10 includes: a driving transistor T1, a clamping module 11, a first power supply terminal VDD, a second power supply terminal VEE, and a display signal terminal GS; Reference Figure 4The light-emitting module 20 is electrically connected to the first power supply terminal VDD and the drain of the driving transistor T1, respectively; the source of the driving transistor T1 is coupled to the second power supply terminal VEE at the first node A; the gate of the driving transistor T1 is electrically connected to the display signal terminal GS; the driving transistor T1 is used to provide driving current to the light-emitting module 20 according to the first power supply signal of the first power supply terminal VDD and the display signal of the display signal terminal GS; the clamping module 11 is electrically connected to the gate of the driving transistor T1 and the first node A, respectively; the clamping module 11 is used to stabilize the gate potential of the driving transistor T1 within a first preset range.

[0033] Specifically, the first power supply terminal VDD can be used to receive the positive power supply signal PVDD, the second power supply terminal VEE can be electrically connected to the power supply chip to receive the negative power supply signal PVEE provided by the power supply chip, and the display signal terminal GS can be used to receive the grayscale display signal to provide a voltage signal to the gate of the driving transistor T1 according to the received grayscale display signal; then the first resistor R1 can be understood as the wiring resistance of the signal line connecting the power supply chip and the first node A. Figure 4In the example of driving transistor T1 being an N-channel MOS transistor, when the display signal provided by the display signal terminal GS is at a high level, driving transistor T1 is turned on. At this time, a current path is formed from the first power supply terminal VDD to the second power supply terminal VEE, so that the current generated by driving transistor T1 according to the gate potential is provided to the light-emitting module 20 to make the light-emitting module 20 emit light. At this time, clamping module 11 can stabilize the gate potential of driving transistor T1 within a first preset range, so as to prevent the potential of the first node A from affecting the gate potential of driving transistor T1. If the connection node between the clamping module 11 and the gate of the driving transistor T1 is the second node B, then the voltage Vgs (i.e., VG-VS) between the potential VG of the gate G of the driving transistor T1 and the potential VS of its source S is equivalent to the voltage difference Vba (i.e., VB-VA) between the potential VA of the second node B and the potential VB of the first node. By stabilizing the gate potential of the driving transistor T1 within a first preset range through the clamping module 11, that is, stabilizing the potential of the second node B within a first preset range, the voltage difference Vba between the potential VB of the second node B and the potential VA of the first node A can be kept relatively stable. This prevents the potential of the source S of the driving transistor T1 from affecting the potential of the gate G of the driving transistor T1, ensuring the stability of the gate G potential of the driving transistor T1. This allows the driving transistor T1 to provide driving current to the light-emitting module 20 according to the potential of its gate G. The clamping module 11 can ensure the stability and accuracy of the driving current provided by the driving transistor T1, improve the reliability of the driving circuit, and thus ensure the light emission stability and accuracy of the light emission module 20. This is beneficial to improving the light emission uniformity of the light emission panel including the driving circuit and improving the display light emission effect of the light emission panel. Furthermore, when the display signal provided by the display signal terminal GS is at a low level, the driving transistor T1 is turned off. At this time, charge easily accumulates between the gate G and the source S of the driving transistor T1, causing its gate G potential to rise. The clamping module 11 can also prevent the driving transistor T1 from being damaged due to excessively high gate potential. That is, when the gate potential of the driving transistor T1 rises instantaneously due to electrostatic discharge, the clamping module 11 can control the release of charge at the gate of the driving transistor T1 to reduce the gate potential of the driving transistor T1 and protect the driving transistor T1.

[0034] It should be noted that, Figure 4 The example given is an N-channel MOS transistor driving transistor T1. It is understood that driving transistor T1 can also be a P-channel MOS transistor, and the embodiments of the present invention do not specifically limit this.

[0035] For example, such as Figure 3As shown, when the driving transistor T1 is a P-channel MOSFET, the first power supply terminal VDD can be electrically connected to the power supply chip, receiving the positive power supply signal PVDD provided by the power supply chip, and the second power supply terminal VEE receives the negative power supply signal PVEE. When the display signal provided by the display signal terminal GS is low, the driving transistor T1 is turned on, and a current path is formed from the first power supply terminal VDD to the second power supply terminal VEE, so that the current generated by the driving transistor T1 according to the gate potential is provided to the light-emitting module 20 to make the light-emitting module 20 emit light. At this time, the clamping module 11 can also prevent the high potential of the first node A from affecting the low potential of the second node B, so as not to affect the conduction degree of the driving transistor T1, and thus not to affect the brightness of the light-emitting module 20; and when the gate potential of the driving transistor T1 rises instantaneously due to electrostatic discharge, the clamping module 11 can also control the charge release at the gate of the driving transistor T1 to reduce the gate potential of the driving transistor T1, thereby protecting the driving transistor T1.

[0036] Since the clamping module is effective for driving transistors of different channel types, for ease of description, unless otherwise specified, the following embodiments will be illustrated using N-channel MOS transistors as driving transistors.

[0037] Furthermore, the figure only shows that the light-emitting module 20 includes only one light-emitting element D0. It can be understood that the light-emitting module 20 may also include multiple light-emitting elements D0; that is, one driving circuit 10 can drive one light-emitting element D0 to emit light, or it can drive multiple light-emitting elements D0 to emit light. This embodiment of the invention does not specifically limit this. For example, when the light-emitting module 20 includes multiple light-emitting elements D0, the multiple light-emitting elements D0 can be as follows... Figure 5 (The driving transistor is an N-channel MOS transistor) It is connected in parallel between the first power supply terminal VDD and the drain of the driving transistor T1, as shown. Figure 6 (The driving transistor is a P-channel MOS transistor) is connected in series between the drains of the driving transistor T1, as shown in the embodiment of the present invention.

[0038] The driving circuit provided in this embodiment of the invention, by electrically connecting a clamping module between the gate and source of the driving transistor, can stabilize the gate potential of the driving transistor within a first preset range. On the one hand, it can prevent the driving transistor from being damaged due to excessively high gate potential. That is, when the gate potential of the driving transistor increases instantaneously due to electrostatic discharge, the clamping module can control the release of charge at the gate of the driving transistor to reduce the gate circuit of the driving transistor and protect the driving transistor. On the other hand, it can prevent the source potential of the driving transistor from affecting the gate potential of the driving transistor, ensuring the stability of the gate potential of the driving transistor. This ensures the stability and accuracy of the driving current provided by the driving transistor to the light-emitting module according to its gate potential, improves the reliability of the driving circuit, and thus ensures the light-emitting stability and accuracy of the light-emitting module. This, in turn, helps to improve the light-emitting uniformity of the light-emitting panel including the driving circuit and improve the display light-emitting effect of the light-emitting panel.

[0039] Optional, see reference Figure 3 or Figure 4 The first preset range can be: V1≤Vg≤V2; where V1 is the voltage value of the display signal corresponding to gray level 0, and V2 is the voltage value of the display signal corresponding to gray level 255.

[0040] Specifically, grayscale can refer to the level of display brightness. Different grayscales correspond to different voltage values ​​of the display signal. Since the driving transistor T1 usually operates in the linear region, the gate voltage Vg provided by the display signal terminal GS to the driving transistor T1 is different, which can control the degree of conduction of the driving transistor T1 to be different, thereby controlling the light-emitting module 20 to emit light at different grayscale levels. Among them, the darkest display brightness corresponds to gray level 0, and the brightest display brightness corresponds to gray level 255. The clamping module 11 is configured to stabilize the gate potential of the driving transistor T1 between the voltage V1 corresponding to the minimum gray level 0 and the voltage V2 corresponding to the maximum gray level 255. In this way, when the static electricity accumulated between the gate and source of the driving transistor T1 exceeds the conduction threshold of the clamping module 11, the accumulated static electricity can be released through the conducting clamping module 11. When the driving transistor T1 is in the conducting state, the clamping module 11 can clamp the potential of the second node B (that is, the gate potential of the driving transistor T1) within the voltage range corresponding to the gray level according to the display signal, so that the driving transistor T1 can provide the corresponding driving current to the light-emitting module 20, thereby enabling the light-emitting module 20 to emit light at different gray levels according to the driving current.

[0041] Optional, refer to the reference Figure 3 and Figure 4The first preset range can also be: Vl≤Vg≤Vh; in this case, the display signal can be a pulse width modulation signal; Vh is the highest amplitude of the pulse width modulation signal, and Vl is the lowest amplitude of the pulse width modulation signal; wherein, when the driving transistor T1 is an N-type transistor, Vh is the voltage value that controls the driving transistor T1 to be in the on state, and Vl is the voltage value that controls the driving transistor T1 to be in the off state; or, when the driving transistor T1 is a P-type transistor, Vl is the voltage value that controls the driving transistor to be in the on state, and Vh is the voltage value that controls the driving transistor T1 to be in the off state.

[0042] Specifically, the display signal provided by the display signal terminal GS can be a pulse width modulation signal (PWM signal). At this time, the conduction time of the driving transistor can be adjusted by adjusting the duty cycle of the pulse width modulation signal, thereby adjusting the light emission time of the light-emitting element D0. Within the display time of one frame, the longer the light emission time of the light-emitting element D0, the greater the integral value of the light emission brightness of the light-emitting element DO received by the human eye with respect to time, thus making the display brightness seen by the human eye higher. For example, when the driving transistor T1 is an N-type transistor, the conduction time of the driving transistor T1 can be adjusted by adjusting the duration of the voltage Vh within the signal period. If the grayscale is low, the duty cycle of the pulse width modulation signal is small, that is, the duration of the voltage Vh within the signal period is short. The shorter the conduction time of the driving transistor T1, the shorter the light emission time of the light-emitting module 20, and the lower the brightness of the light-emitting module 20 as seen by the human eye. If the grayscale is high, the duty cycle of the pulse width modulation signal is large, that is, the duration of the voltage Vh within the signal period is long. The longer the conduction time of the driving transistor T1, the longer the light emission time of the light-emitting module 20, and the higher the brightness of the light-emitting module 20 as seen by the human eye. Similarly, when the driving transistor T1 is a P-type transistor, if the displayed grayscale is low, the duty cycle of the pulse width modulation signal is large, that is, the voltage Vl occupies a shorter time and the voltage Vh occupies a longer time within the signal period. Therefore, the conduction time of the driving transistor T1 is shorter, the light emission time of the light-emitting module 20 is shorter, and the brightness of the light-emitting module 20 perceived by the human eye is lower. If the displayed grayscale is high, the duty cycle of the pulse width modulation signal is small, that is, the voltage Vl occupies a longer time and the voltage Vh occupies a shorter time within the signal period. Therefore, the conduction time of the driving transistor T1 is longer, the light emission time of the light-emitting module 20 is longer, and the brightness of the light-emitting module 20 perceived by the human eye is higher.

[0043] Similarly, when the control driving transistor T1 is in the on state, the clamping module 11 can stabilize the gate potential of the driving transistor T1 between Vl and Vh, and can stabilize the display signal provided by the display signal terminal GS to the gate of the driving transistor T1 within a certain duty cycle, so as to ensure that the conduction degree of the driving transistor T1 is relatively stable, so that the driving current provided to the light-emitting module 20 remains stable, thereby enabling the light-emitting module 20 to emit light stably; when the control driving transistor T1 is in the off state, if the static electricity accumulated between its gate and source reaches the conduction threshold of the clamping module 11, the accumulated static electricity can be released through the conducting clamping module 11, thereby preventing the driving transistor T1 from being damaged due to electrostatic breakdown.

[0044] Optional, Figure 7 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 7 As shown, the clamping module 11 includes: a clamping diode D1; the anode of the clamping diode D1 is electrically connected to the gate of the driving transistor T1, and the cathode of the clamping diode D1 is electrically connected to the first node A.

[0045] Specifically, when the driving transistor T1 is in the off state, if the static electricity accumulated between the gate and source of the driving transistor T1 reaches the conduction threshold of the clamping diode D1, the static electricity can be released through the conducting clamping diode D1. At the same time, due to the clamping effect of the clamping diode D1, the gate potential of the driving transistor T1 can be stabilized at the voltage value of the display signal provided by the display signal terminal GS, so that the potential of the first node A will not affect the potential of the second node B. This can improve the light emission stability of the light-emitting element while providing electrostatic protection, thereby improving the uniformity of display light emission.

[0046] Optional, see reference Figure 7 The voltage drop across the clamping diode D1 is ΔV, and the threshold voltage of the driving transistor T1 is Vth; where |ΔV|>|Vth|.

[0047] Specifically, the voltage drop across the clamping diode D1 can be set to be ΔV greater than the threshold voltage Vth of the driving transistor T1. In this case, when the driving transistor T1 is normally turned on, the clamping diode D1 remains essentially open, meaning the display signal provided by the display signal terminal GS will not be transmitted to the second power supply terminal VEE through the clamping diode D1. This further ensures that the gate potential of the driving transistor T1 is relatively accurate, and compared to… Figure 1 Setting a short-circuit resistor R0' in the circuit can reduce useless power consumption and heat generation, which is beneficial to the low power consumption and display illumination accuracy of the light-emitting panel using this driving circuit.

[0048] In another embodiment of the present invention, the clamping diode D1 can be a Zener diode, such as... Figure 8 As shown, when the clamping diode D1 is a Zener diode, the cathode of the clamping diode D1 is electrically connected to the second node B, and the anode is electrically connected to the first node A. The operating voltage of the clamping diode D1 can be set within a first preset range. At this time, when the driving transistor T1 is turned on, the clamping diode D1 is broken down, which can stabilize the voltage of the second node B, that is, ensure that the potential difference between the first node A and the second node B remains unchanged. Thus, the potential of the first node A will not affect the gate potential of the driving transistor T1, thereby ensuring the potential stability of the second node B and ensuring the light emission stability of the light-emitting module 20. When the static electricity accumulated between the gate and source of the driving transistor T1 breaks down the clamping diode D1, the clamping diode D1 can also stabilize the potential of the second node B so that it is not too high, thus preventing the driving transistor T1 from being broken down by static electricity.

[0049] For example, when the clamping module 11 includes a clamping diode D1, the clamping diode D1 can be fabricated on the same layer as the active layer of the driving transistor T1, which can simplify the fabrication process. Alternatively, the clamping diode D1 can be soldered as an independent device between the first node A and the gate of the driving transistor T1. The present invention does not specifically limit the configuration of the clamping diode D1.

[0050] Optional, Figure 9 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 9 As shown, the clamping module 11 includes a clamping transistor M1; the gate of the clamping transistor M1 is electrically connected to the source, and the clamping transistor M1 is electrically connected between the gate of the driving transistor T1 and the first node A.

[0051] Specifically, the gate and source of the clamping transistor M1 can be electrically connected to form a PN junction. At this time, the clamping transistor M1 is equivalent to a diode, which can play a role in electrostatic protection and improve the light-emitting effect of the light-emitting module 20. Furthermore, when the clamping module 11 includes the clamping transistor M1, the clamping transistor M1 can be fabricated in the same process as the driving transistor, which can simplify the fabrication process of the driving circuit.

[0052] Optionally, the threshold voltage of the clamping transistor is Vth', and the threshold voltage of the driving transistor is Vth; where |Vth'|>|Vth|.

[0053] Specifically, the absolute value of the threshold voltage Vth' of the clamping transistor M1 can be set to be greater than the absolute value of the threshold voltage Vth of the driving transistor T1, i.e., |Vth'|>|Vth|. Thus, when the driving transistor T1 is normally turned on, the clamping transistor M1 is in the off state, preventing the potential of the first node A from being transmitted to the second node B, thereby not affecting the potential of the second node B, and consequently not affecting the conduction level of the driving transistor T1, and thus not affecting the brightness of the light-emitting module 20. When the driving transistor T1 is in the off state, when the accumulated static electricity between the gate and source of the driving transistor T1 reaches the threshold voltage Vth' of the clamping transistor M1, the clamping transistor M1 turns on, and the accumulated static electricity can be released through the clamping transistor M1. Furthermore, when the driving transistor T1 is in the normal state, the clamping transistor M1 is in the off state, and no current flows through it. Compared with existing technologies, this helps reduce the power consumption of the driving circuit, thus contributing to the low power consumption of the light-emitting panel using this driving circuit.

[0054] Optional, see reference Figure 9 The clamping transistor M1 can be a P-type transistor. In this case, when the control driving transistor T1 is turned on, the potential of the second node B can be made lower than the threshold voltage Vth of the driving transistor T1 but higher than the threshold voltage Vth' of the clamping transistor M1, so that the clamping transistor M1 is in the off state. The potential of the first node A will not be transmitted to the second node B, and will not affect the potential of the second node B, thus not affecting the conduction degree of the driving transistor T1, and therefore will not affect the light emission brightness of the light-emitting module 20.

[0055] Figure 10 This is a schematic diagram of a driving circuit provided in an embodiment of the present invention, such as... Figure 10 As shown, clamping transistor M1 is an N-type transistor. The gate and source of clamping transistor M12 are both electrically connected to the first node A, and the drain of clamping transistor M1 is electrically connected to the gate of the driving transistor. When the driving transistor T1 is turned on, the potential of the second node B can be made higher than the threshold voltage Vth of the driving transistor T1 but lower than the threshold voltage Vth' of the clamping transistor M1. At this time, clamping transistor M1 is in the off state, so the potential of the first node A will not affect the potential of the second node B, and thus will not affect the conduction degree of the driving transistor T1, and therefore will not affect the light emission brightness of the light-emitting module 20.

[0056] Optionally, the clamping module 11 includes a first clamping unit 111 and a second clamping unit 112. Figure 11 This is a structural diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 11As shown, the input terminal of the first clamping unit 111 is electrically connected to the gate of the driving transistor T1, the output terminal of the first clamping unit 111 is electrically connected to the output terminal of the second clamping unit 112, and the input terminal of the second clamping unit 112 is electrically connected to the first node A.

[0057] Specifically, the clamping module 11 may include two clamping units, namely a first clamping unit 111 and a second clamping unit 112. The first clamping unit 111 and the second clamping unit 112 may be connected in reverse series between the second node B and the first node A. In this way, the potential of the second node B can be clamped by the first clamping unit 111, and the potential of the first node A can be clamped by the second clamping unit 112. Alternatively, the potential of the first node A can be stabilized by the first clamping unit 111, and the potential of the second node B can be stabilized by the second clamping unit 112, so that when the control driving transistor T1 is in the on state, the potentials of the first node A and the second node B do not affect each other, thereby ensuring that the light emission brightness of the light-emitting module 20 is relatively accurate. Alternatively, when the control driving transistor T1 is in the off state, the static electricity accumulated between the gate and source of the driving transistor T1 can form a static discharge path between the first clamping unit 111 and the second clamping unit 112, thereby allowing the static electricity to be released through the first clamping unit 111 and the second clamping unit 112.

[0058] It should be noted that the above embodiments are only illustrated by the example of the first clamping unit 111 and the second clamping unit 112 being connected in reverse series between the first node A and the second node B. It can be understood that the first clamping unit 111 and the second clamping unit 112 can also be connected in reverse parallel between the first node A and the second node B. The embodiments of the present invention do not specifically limit this.

[0059] Optional, Figure 12 This is a structural diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 12 As shown, the input terminal of the first clamping unit 111 is electrically connected to the gate of the driving transistor T1, and the output terminal of the first clamping unit 111 is electrically connected to the first node A; the input terminal of the second clamping unit 112 is electrically connected to the first node A, and the output terminal of the second clamping unit 112 is electrically connected to the gate of the driving transistor T1.

[0060] Specifically, by connecting the first clamping unit 111 and the second clamping unit 112 in reverse parallel, based on the same principle as connecting the first clamping unit 111 and the second clamping unit 112 in reverse series, the first clamping unit 111 clamps the potential of the second node B, and the second clamping unit 112 clamps the potential of the first node A; or, the first clamping unit 111 stabilizes the potential of the first node A, and the second clamping unit 112 stabilizes the potential of the second node B; thus enabling the control drive transistor T1 to... When in the on state, the potential of the first node A and the potential of the second node B do not affect each other, thus ensuring that the light emission brightness of the light-emitting module 20 is relatively accurate; or, when the control driving transistor T1 is in the off state, the static electricity accumulated between the gate and source of the driving transistor T1 can turn on the first clamping unit 111 and / or the second clamping unit 112, thus forming a static discharge path, so that it can be released through the first clamping unit 111 and / or the second clamping unit 112 to prevent the driving transistor T from being damaged due to electrostatic breakdown.

[0061] Optional, Figure 13 and Figure 14 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention, for reference. Figure 13 or Figure 14 The first clamping unit 111 includes a first diode D11; the anode of the first diode D11 is electrically connected to the input terminal of the first clamping unit 111, and the cathode of the first diode D11 is electrically connected to the output terminal of the first clamping unit 111; and / or, the second clamping unit 112 includes a second diode D12; the anode of the second diode D12 is electrically connected to the input terminal of the second clamping unit 112, and the cathode of the second diode D12 is electrically connected to the output terminal of the second clamping unit 112.

[0062] Specifically, such as Figure 13As shown, the first clamping unit 111 includes a first diode D11 and the second clamping unit 112 includes a second diode D12. The first diode D11 and the second diode D12 can both be conventional diodes and are connected in reverse series between the first node A and the second node B. At this time, the first diode D11 and the second diode D12 are equivalent to a bidirectional diode. When the driving transistor T1 is turned on, the first diode D11 can prevent the potential of the first node A from being transmitted to the second node B, so that the potential of the first node A will not affect the potential of the second node B. At this time, the second transistor D12 can prevent the potential of the second node B from being transmitted to the first node A, that is, simultaneously prevent the potential of the second node B from affecting the potential of the first node A. This can further ensure that the light-emitting module 20 can emit light accurately. When the driving transistor T1 is turned off, the static electricity accumulated between the gate and source of the driving transistor T1 can break down the first diode D11 and the second diode D12 to form an electrostatic discharge circuit, preventing the driving transistor T1 from being damaged due to electrostatic breakdown.

[0063] refer to Figure 14 ,and Figure 13 The difference lies in that the first diode D11 and the second diode D12 are connected in reverse parallel between the first node A and the second node B, based on... Figure 12 Similarly, when the driving transistor T1 is turned on, the first diode D11 can prevent the potential of the first node A from being transmitted to the second node B, and the second transistor D12 can prevent the potential of the second node B from being transmitted to the first node A. This prevents the potentials of the first node A and the second node B from affecting each other, further ensuring that the light-emitting module 20 can emit light accurately. When the driving transistor T1 is turned off, the static electricity accumulated between the gate and source of the driving transistor T1 can break down the first diode D11, or the second diode D12, or both the first diode D11 and the second diode D12, forming an electrostatic discharge circuit to prevent the driving transistor T1 from being damaged due to electrostatic breakdown.

[0064] Optionally, the first diode D11 is a Zener diode; and / or, the second diode D12 is a Zener diode.

[0065] Specifically, Figure 15 This is a structural diagram of another driving circuit provided in an embodiment of the present invention, such as... Figure 15As shown, both the first diode D11 and the second diode D12 are Zener diodes. When the first diode D11 experiences electrostatic discharge (ESD), it can stabilize the potential of the first node A at a preset value. Similarly, when the second diode D12 experiences ESD, it can stabilize the potential of the second node B at a preset value. When the first diode D11 and the second diode D12 are connected in reverse series between the first node A and the second node B, and both are Zener diodes, they function as a bidirectional Zener diode.

[0066] It should be noted that, Figure 15 The accompanying drawings are merely illustrative of embodiments of the present invention. In other embodiments of the present invention, only the first diode D11 may be a Zener diode, or only the second diode D12 may be a Zener diode. The present invention does not impose specific limitations on this.

[0067] Optionally, the first clamping unit 111 and the second clamping unit 112 may further include transistors. Figure 16 and Figure 17 This is a schematic diagram of another driving circuit provided in an embodiment of the present invention, in conjunction with reference to the reference. Figure 16 and Figure 17 The first clamping unit 111 includes a first transistor M11; the first transistor M11 is a P-type transistor or an N-type transistor; when the first transistor M11 is a P-type transistor, the gate and source of the first transistor M11 are electrically connected to the input terminal of the first clamping unit 111, and the drain of the first transistor M11 is electrically connected to the output terminal of the first clamping unit 111; when the first transistor M11 is an N-type transistor, the gate and source of the first transistor M11 are electrically connected to the output terminal of the first clamping unit 111, and the drain of the first transistor M11 is electrically connected to the input terminal of the first clamping unit 111.

[0068] For example, when the first clamping unit 111 includes the first transistor M11, the second clamping unit 112 may include the second transistor M12. In this case, the first transistor M11 and the second transistor M12 can be fabricated in the same process, which can simplify the process flow and save costs.

[0069] refer to Figure 16 and Figure 17The second clamping unit 112 includes a second transistor M12; the second transistor M12 is a P-type transistor or an N-type transistor; when the second transistor M12 is a P-type transistor, the gate and source of the second transistor M12 are electrically connected to the input terminal of the second clamping unit 112, and the drain of the second transistor M12 is electrically connected to the output terminal of the second clamping unit 112; when the second transistor M12 is an N-type transistor, the gate and source of the second transistor M12 are electrically connected to the output terminal of the second clamping unit 112, and the drain of the second transistor M12 is electrically connected to the input terminal of the second clamping unit 112.

[0070] Specifically, such as Figure 16 As shown, both the first clamping unit 111 and the second clamping unit 112 can be configured to include transistors, and both the first transistor M11 and the second transistor M12 are P-type transistors. Taking the first transistor M11 and the second transistor M12 connected in series between the first node A and the second node B as an example, in this case, the gate and source of the first transistor M11 are shorted and then electrically connected to the second node B, the drain of the first transistor M11 is electrically connected to the drain of the second transistor M12, and the gate and source of the second transistor M12 are shorted and then electrically connected to the first node A. Then, the structure of the clamping module 11 is equivalent to... Figure 13 The structure of the clamping module shown, i.e., the first transistor M11 is equivalent to Figure 13 The first transistor D11 and the second transistor M12 are equivalent to Figure 13 The second transistor D12 in the circuit works on a similar principle, so it will not be described in detail here.

[0071] Or, such as Figure 17 As shown, both the first transistor M11 and the second transistor M12 can be configured as N-type transistors. Taking the example of the first transistor M11 and the second transistor M12 connected in series between the first node A and the second node B, the drain of the first transistor M11 is electrically connected to the second node B. The gate and source of the first transistor M11 are shorted and then electrically connected to the gate and source of the second transistor M12. The drain of the second transistor M12 is electrically connected to the first node A. At this point, the structure of the clamping module 11 remains the same as... Figure 13 The clamping module shown is structurally equivalent, meaning the first transistor M11 is equivalent to... Figure 13 The first transistor D11 and the second transistor M12 are equivalent to Figure 13 The first transistor D12 in the model works on a similar principle, so it will not be described in detail here.

[0072] It should be noted that the above Figure 16 and Figure 17This illustration only shows the case where the first clamping unit 111 includes a first transistor M11 and the second clamping unit includes a second transistor M12, with the first transistor M11 and the second transistor M12 connected in reverse series. However, in this embodiment of the invention, the first transistor M11 and the second transistor M12 can also be connected in reverse parallel, for example... Figure 18 As shown, the first transistor M11 and the second transistor M12 are both P-type transistors and are connected in reverse parallel between the first node A and the second node B; or as shown... Figure 19 As shown, the first transistor M11 and the second transistor M12 are both N-type transistors and are connected in reverse parallel between the first node A and the second node B.

[0073] It is understandable that the above Figures 12-19 The diagram exemplarily shows that the first clamping unit 111 and the second clamping unit 112 have the same structure, but in embodiments of the present invention, the structures of the first clamping unit 111 and the second clamping unit 112 may be different, for example... Figure 20 As shown, when the first clamping unit 111 includes a first transistor M11 and the second clamping unit 112 includes a second transistor M12, the first transistor M11 can be a P-type transistor and the second transistor M12 can be an N-type transistor. In this case, the gate and source of the first transistor M11 can be shorted and electrically connected to the second node B, and the gate and source of the second transistor M12 can be shorted and electrically connected to the drain of the first transistor M11. The drain of the second transistor M12 is electrically connected to the first node A; or, as... Figure 21 As shown, when the first clamping unit 111 includes a first transistor M11 and the second clamping unit 112 includes a second transistor M12, the first transistor M11 can also be an N-type transistor and the second transistor M12 can be a P-type transistor. In this case, the drain of the first transistor M11 can be electrically connected to the second node B, the gate and source of the first transistor M11 can be shorted and then electrically connected to the drain of the second transistor M12, and the gate and source of the second transistor M12 can be shorted and then electrically connected to the first node A; or, as... Figure 22 As shown, the first clamping module 111 includes a first diode D11, and the second clamping module 121 includes a second transistor M12; or, as Figure 23 As shown, the first clamping module 111 includes a first transistor M11, and the second clamping module 121 includes a second diode D12. This embodiment of the invention does not limit the specific configuration of these components. The technical principles underlying the different structures of the first clamping unit 111 and the second clamping unit 112 are similar to those underlying structures of the same first clamping unit 111 and the second clamping unit 112. The similarities can be found in the description above and will not be repeated here.

[0074] Optional, Figure 24This is a schematic diagram of a driving circuit provided in an embodiment of the present invention, such as... Figure 24 As shown, the driving circuit 10 may further include a current limiting module 12, which is electrically connected between the source of the driving transistor T1 and the first node A. This module is used to prevent excessive current in the current path from the first power supply terminal VDD to the second power supply terminal VEE from damaging the light-emitting element D0 when the driving transistor T1 is turned on. For example, the current limiting module 12 may be a resistor R2, and the resistance value of the resistor R2 may be set according to the design requirements.

[0075] Based on the same inventive concept, this embodiment of the invention also provides a light-emitting panel, which includes multiple first signal lines, multiple light-emitting modules, and multiple driving circuits provided by any embodiment of the invention arranged in an array. Therefore, the light-emitting panel provided by this embodiment of the invention includes the technical features of the driving circuit provided by any embodiment of the invention, and can achieve the beneficial effects of the driving circuit provided by any embodiment of the invention. The similarities can be referred to the above description of the driving circuit provided by the embodiments of the invention, and will not be repeated here.

[0076] Optional, Figure 25 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of the present invention, as shown below. Figure 25 As shown, the light-emitting panel 30 includes multiple first signal lines L1, multiple light-emitting modules 20, and multiple driving circuits 10 provided in any embodiment of the present invention arranged in an array. At least some of the driving circuits 10 located in the same column have their second power supply terminals VEE electrically connected to the same first signal line L1.

[0077] Specifically, the power chip 40 can transmit the PVEE signal through the first signal line L1. The second power terminal VEE of the driving circuit 10 can obtain the PVEE signal through the first signal line L1. At least some of the second power terminals VEE of the driving circuit 10 are electrically connected to the same first signal line L1. The trace resistance of the first signal line L1 increases in the direction away from the power chip 40, that is, the first resistance R1 increases. This makes the potential of the first node A in each driving circuit 10 increase in the direction away from the power chip 40. Therefore, when a resistor is connected in series between the first node A and the gate of the driving transistor T1, the potential of the first node A in the direction away from the power chip 40 has an increasing influence on the gate potential of the driving transistor T1. This results in a decrease in the conduction degree of the driving transistor T1, causing the light-emitting module 20 to fail to emit light normally. Therefore, the clamping module 11 can be set to stabilize the gate potential of the driving transistor T1 in each driving circuit 10 within a first preset range to ensure that the conduction degree of the driving transistor T1 is more accurate, thereby ensuring that the light-emitting brightness of each light-emitting module 20 is more accurate and improving the display uniformity of the light-emitting panel 30.

[0078] Optionally, to simplify circuit design, at least some of the drive circuits 10 located in the same row may share the clamping module 11, and / or at least some of the drive circuits 10 located in the same column may share the clamping module 11, such as... Figure 26 As shown, at least some of the drive circuits 10 located in the same row share a clamping module 11.

[0079] It should be noted that the light-emitting module may include one light-emitting element or multiple light-emitting elements. The driving circuit may drive one light-emitting element or multiple light-emitting elements accordingly. This embodiment of the invention does not make specific limitations in this regard.

[0080] For example, the light-emitting module 20 may include one light-emitting element D0 or multiple light-emitting elements D0. Then the driving circuit 10 may drive one light-emitting element or multiple light-emitting elements D0 accordingly. This embodiment of the invention does not specifically limit this.

[0081] When the light-emitting module 20 includes multiple light-emitting elements D0, the light-emitting elements D0 can be connected in series and / or in parallel, such as... Figure 27 As shown, the light-emitting elements D0 in the light-emitting module 20 are connected in series.

[0082] For example, in embodiments of the present invention, the light-emitting element D0 may include, but is not limited to, organic light-emitting diodes (OLEDs), micro light-emitting diodes (micro-LEDs), mini light-emitting diodes (mini-LEDs), and light-emitting diode (LED) beads. In some optional embodiments, the light-emitting element D0 is preferably a mini-LED with a size between 50μm and 200μm, so that the light-emitting panel 30 has a higher resolution.

[0083] It is understood that the light-emitting panel 30 can be a display panel that directly displays the corresponding image; it can also be used to provide a backlight for other display modules (such as liquid crystal display modules), in which case the light-emitting panel 30 is a component of the backlight module. This embodiment of the invention does not specifically limit the function and type of the light-emitting panel 30.

[0084] Based on the same inventive concept, this embodiment of the invention also provides a display device, which includes the light-emitting panel provided in any embodiment of the invention. Therefore, the display device provided in this embodiment of the invention includes the technical features of the light-emitting panel provided in any embodiment of the invention, and can achieve the beneficial effects of the light-emitting panel provided in any embodiment of the invention. The similarities can be referred to the above description of the light-emitting panel provided in the embodiments of the invention, and will not be repeated here.

[0085] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0086] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A driving circuit, characterized in that, The driving circuit is used to drive the light-emitting module to emit light. The driving circuit includes: a driving transistor, a clamping module, a first power supply terminal, a second power supply terminal, and a display signal terminal. The light-emitting module is electrically connected to the first power supply terminal and the drain of the driving transistor, respectively; the source of the driving transistor is coupled to the second power supply terminal at the first node; the gate of the driving transistor is electrically connected to the display signal terminal; the driving transistor is used to provide driving current to the light-emitting module according to the first power supply signal of the first power supply terminal and the display signal of the display signal terminal. The clamping module is electrically connected to the gate of the driving transistor and the first node, respectively; the clamping module is used to stabilize the gate potential of the driving transistor within a first preset range; The clamping module includes a clamping transistor; the gate of the clamping transistor is electrically connected to the source, and the clamping transistor is electrically connected between the gate of the driving transistor and the first node; The threshold voltage of the clamping transistor is Vth', and the threshold voltage of the driving transistor is Vth; wherein, |Vth'|>|Vth|.

2. The driving circuit according to claim 1, characterized in that, The first preset range is: V1 ≤ Vg ≤ V2; Wherein, V1 is the voltage value of the display signal corresponding to gray level 0, and V2 is the voltage value of the display signal corresponding to gray level 255.

3. The driving circuit according to claim 1, characterized in that, The first preset range is: Vl ≤ Vg ≤ Vh; The display signal is a pulse width modulation signal; Vh is the highest amplitude of the pulse width modulation signal, and Vl is the lowest amplitude of the pulse width modulation signal; Wherein, when the driving transistor is an N-type transistor, Vh is the voltage value that controls the driving transistor to be in the on state, and Vl is the voltage value that controls the driving transistor to be in the off state; or, when the driving transistor is a P-type transistor, Vl is the voltage value that controls the driving transistor to be in the on state, and Vh is the voltage value that controls the driving transistor to be in the off state.

4. The driving circuit according to claim 1, characterized in that, The clamping transistor is a P-type transistor; the gate and source of the clamping transistor are both electrically connected to the gate of the driving transistor, and the drain of the clamping transistor is electrically connected to the first node. Alternatively, the clamping transistor is an N-type transistor, with its gate and source electrically connected to the first node, and its drain electrically connected to the gate of the driving transistor.

5. The driving circuit according to claim 1, characterized in that, The clamping module includes a first clamping unit and a second clamping unit. The input terminal of the first clamping unit is electrically connected to the gate of the driving transistor, the output terminal of the first clamping unit is electrically connected to the output terminal of the second clamping unit, and the input terminal of the second clamping unit is electrically connected to the first node. Alternatively, the input terminal of the first clamping unit is electrically connected to the gate of the driving transistor, and the output terminal of the first clamping unit is electrically connected to the first node; The input terminal of the second clamping unit is electrically connected to the first node, and the output terminal of the second clamping unit is electrically connected to the gate of the driving transistor.

6. The driving circuit according to claim 5, characterized in that, The first clamping unit includes a first diode; the anode of the first diode is electrically connected to the input terminal of the first clamping unit, and the cathode of the first diode is electrically connected to the output terminal of the first clamping unit. Alternatively, the second clamping unit includes a second diode; the anode of the second diode is electrically connected to the input terminal of the second clamping unit, and the cathode of the second diode is electrically connected to the output terminal of the second clamping unit.

7. The driving circuit according to claim 6, characterized in that, The first diode is a Zener diode; or, the second diode is a Zener diode.

8. The driving circuit according to claim 5, characterized in that, The first clamping unit includes a first transistor; the first transistor is a P-type transistor or an N-type transistor; when the first transistor is a P-type transistor, the gate and source of the first transistor are electrically connected to the input terminal of the first clamping unit, and the drain of the first transistor is electrically connected to the output terminal of the first clamping unit; when the first transistor is an N-type transistor, the gate and source of the first transistor are electrically connected to the output terminal of the first clamping unit, and the drain of the first transistor is electrically connected to the input terminal of the first clamping unit. And / or, the second clamping unit includes a second transistor; the second transistor is a P-type transistor or an N-type transistor; when the second transistor is a P-type transistor, the gate and source of the second transistor are electrically connected to the input terminal of the second clamping unit, and the drain of the second transistor is electrically connected to the output terminal of the second clamping unit; when the second transistor is an N-type transistor, the gate and source of the second transistor are electrically connected to the output terminal of the second clamping unit, and the drain of the second transistor is electrically connected to the input terminal of the second clamping unit.

9. The driving circuit according to claim 1, characterized in that, Also includes: Rate limiting module; The current limiting module is electrically connected between the source of the driving transistor and the first node.

10. A light-emitting panel, characterized in that, include: Multiple first signal lines, multiple light-emitting modules, and multiple driving circuits as described in any one of claims 1-9 arranged in an array; At least a portion of the drive circuit located in the same column has its second power supply terminal electrically connected to the same first signal line.

11. The light-emitting panel according to claim 10, characterized in that: At least a portion of the drive circuits located in the same row share the clamping module; And / or, at least a portion of the drive circuits located in the same column share the clamping module.

12. The light-emitting panel according to claim 10, characterized in that, The light-emitting module includes multiple light-emitting elements connected in series and / or in parallel.

13. A display device, characterized in that, include: The light-emitting panel according to any one of claims 10-12.

Images