Electro-optical device fabricated on a substrate and comprising a ferroelectric layer epitaxially grown on the substrate

By epitaxially growing an active layer with ferroelectric characteristics on the SOI substrate, and combining the design of buffer layer, ferroelectric layer, additional layer and contacts, the problems of low efficiency and high cost of ferroelectric film integration in the prior art are solved, and high-quality and low-cost electro-optical device integration is achieved.

CN114830332BActive Publication Date: 2025-03-28OPTICAL QUANTUM COMPUTING CO
2 Cites 0 Cited by

Patent Information

Application Number
CN202080088210.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-10-18
Filing Date
2020-10-19
Publication Date
2025-03-28
Estimated Expiration
2040-10-19

AI Technical Summary

Technical Problem

The prior art has problems of low efficiency, high cost and limited architecture of the underlying device when integrating ferroelectric films into silicon or silicon nitride-based waveguide platforms.

Method used

An active layer with ferroelectric characteristics is epitaxially grown on a silicon-on-insulator (SOI) substrate, and other parts of the electro-optical device, including a buffer layer, a ferroelectric layer, an additional layer and a contact piece, are formed on the same SOI substrate, thereby achieving seamless integration of the ferroelectric layer.

Benefits of technology

This method allows the formation of complex oxide films and other components of electro-optical devices on the semiconductor platform, simplifies manufacturing processes, reduces costs, and provides flexible three-dimensional architectural design.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

An electro-optical device is manufactured on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer comprises a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer comprises a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers above the active layer, and a first contact and a second contact to the active layer through at least one of the one or more additional layers. A method for manufacturing the electro-optical device is also described herein.
Need to check novelty before this filing date? Find Prior Art