Memory

By forming a shielding pattern and an air gap structure in the memory, the formation process of the memory is simplified, the preparation efficiency is improved, the parasitic capacitance is reduced, and the performance of the memory is improved.

CN115000069BActive Publication Date: 2025-09-16FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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Patent Information

Application Number
CN202210383675.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-04-14
Publication Date
2025-09-16
Estimated Expiration
2040-04-14

AI Technical Summary

Technical Problem

The existing memory formation method has complicated steps. How to simplify the memory formation process without affecting the performance?

Method used

By forming a word line groove in the substrate and filling the word line structure in the word line groove, multiple shielding patterns are formed, including a first film layer, a second film layer and a third film layer, forming a shielding layer to cover the opening of the word line groove, and omitting the step of removing the gate insulation layer and the gate dielectric layer on the substrate.

Benefits of technology

The preparation process of the memory is simplified, the preparation efficiency is improved, and the parasitic capacitance between the conductive patterns is reduced by forming the first air gap and the second air gap, thereby improving the performance of the memory.

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Abstract

The present invention provides a memory, wherein a plurality of shielding patterns are formed on the substrate, at least part of the shielding patterns are located on the word line structure and extend to fill the word line groove of the remaining depth. The shielding patterns can simultaneously serve as a shielding layer on the substrate and a gate insulating layer to protect the word line structure. Compared with the existing memory formation method, the present invention can omit the steps of removing the gate insulating layer and the gate dielectric layer on the substrate and re-forming the shielding layer on the substrate, thereby simplifying the preparation process of the memory, improving the preparation efficiency, and not affecting the performance of the memory; and, the parasitic capacitance between the conductive patterns can be reduced by the first air gap and the second air gap, thereby improving the performance of the memory.
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