Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber providing an internal space, a fluid supply unit configured to supply drying fluid to the internal space, and a fluid discharge unit configured to discharge drying fluid from the internal space, wherein the fluid discharge unit includes: a discharge line connected to the chamber; a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure; and a heating element installed at or at the rear end of the pressure regulating member.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus. Background Technology

[0002] To manufacture semiconductor devices, desired patterns are formed on a substrate (such as a wafer) using various processes such as photolithography, etching, ashing, ion implantation, and thin-film deposition. Various processing solutions and gases are used in each process, and particles and process byproducts are generated during the process. Cleaning processes are performed before and after each process to remove these particles and process byproducts from the substrate.

[0003] Typically, cleaning solutions are applied to substrates using chemicals or rinsing solutions. A drying process is then performed to remove any remaining chemicals or rinsing solutions from the substrate. In one embodiment of the drying process, a rotary drying process is used, in which the substrate is rotated at high speed to remove any remaining rinsing solutions. However, this rotary drying method carries the risk that the patterns formed on the substrate may collapse.

[0004] Recently, a supercritical drying process has been proposed in which an organic solvent, such as isopropanol (IPA), is supplied to a substrate to replace the rinsing liquid remaining on the substrate with an organic solvent having low surface tension. Then, a supercritical drying gas (e.g., carbon dioxide) is supplied to the substrate to remove the remaining organic solvent. In the supercritical drying process, the drying gas is supplied to an internally sealed processing chamber and is heated and pressurized. Both the temperature and pressure of the drying gas rise above a threshold value, and the drying gas undergoes a phase transition to a supercritical state.

[0005] Supercritical drying gas exhibits high solubility and permeability. That is, when this supercritical drying gas is supplied to the substrate, it easily permeates into the patterns on the substrate, and any organic solvents remaining on the substrate readily dissolve in the drying gas. Therefore, organic solvents remaining between the patterns formed on the substrate can be easily removed.

[0006] However, the supercritical drying gas in the processing chamber has almost no flow. Therefore, the supercritical drying gas may not be properly transferred to the substrate. In this case, it may not be possible to properly remove the organic solvents remaining on the substrate, or the supercritical drying gas containing dissolved organic solvents may not be properly discharged to the outside of the processing chamber.

[0007] To solve this problem, methods such as... are typically used. Figure 1 The method shown is to change the pressure inside the treatment chamber. (Reference) Figure 1In the pressurization step S100, the pressure inside the processing chamber is increased to a first pressure CP1, and in the process step S200, the pressure inside the processing chamber is repeatedly varied between the first pressure CP1 and a second pressure CP2 lower than the first pressure CP1. Then, in the depressurization step S300, the pressure inside the processing chamber is changed to atmospheric pressure. By repeatedly changing the pressure inside the processing chamber in the processing step S200, a flow of supercritical dry gas is generated inside the processing chamber, and the supercritical dry gas can be transferred to the substrate.

[0008] The method of repeatedly changing the pressure inside the processing chamber between a first pressure CP1 and a second pressure CP2 is typically performed by repeatedly changing the opening and closing of valves installed on the supply line for supplying dry gas to the processing chamber and valves installed on the discharge line for discharging the internal space of the processing chamber. When valves are repeatedly opened and closed as described above, particles may be generated in the valves, and these particles may be transported to the processing chamber via the supply or discharge lines. Furthermore, the method of repeatedly changing the pressure inside the processing chamber between the first pressure CP1 and the second pressure CP2 increases the time required to perform processing step S200. This is because there are physical limitations in reducing the time required for pressurization and depressurization in processing step S200. Additionally, rapidly opening and closing the valves to shorten the pressurization and depressurization times may not allow for proper pressurization and depressurization, and could instead interfere with the flow of the dry gas in a supercritical state. Summary of the Invention

[0009] An embodiment of the present invention provides a substrate processing apparatus for effectively processing substrates.

[0010] An embodiment of the present invention provides a substrate processing apparatus for improving the drying efficiency of substrates.

[0011] Embodiments of the present invention provide a substrate processing apparatus for reducing the time required to perform a drying process for a dried substrate.

[0012] Embodiments of the present invention provide a substrate processing apparatus for minimizing the generation of impurities (such as particles) during a drying process for drying a substrate.

[0013] An embodiment of the present invention provides a substrate processing apparatus for compensating for a possible temperature drop when a drying fluid flows through a pressure regulating member.

[0014] Embodiments of the present invention provide a substrate processing apparatus for minimizing the problem of processing liquid adhering to discharge lines.

[0015] The technical objectives of this invention are not limited to those described above. Other technical objectives not mentioned will become clear to those skilled in the art from the following description.

[0016] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing an internal space; a fluid supply unit configured to supply a drying fluid to the internal space; and a fluid discharge unit configured to discharge the drying fluid from the internal space, wherein the fluid discharge unit includes: a discharge line connected to the chamber; a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure; and a heating element installed at or at the rear end of the pressure regulating member.

[0017] In one embodiment, the substrate processing apparatus further includes a controller, wherein the controller controls the fluid supply unit to perform a pressurization step for pressurizing the internal space to a set pressure by supplying dry fluid to the internal space; and the controller controls the fluid supply unit and the fluid discharge unit to perform a flow step, wherein the fluid discharge unit generates flow of dry fluid in the internal space by discharging dry fluid from the internal space while supplying dry fluid to the internal space.

[0018] In one embodiment, the controller controls the fluid supply unit and the fluid discharge unit such that the difference between the supply rate of the dry fluid supplied to the interior space per unit time and the discharge rate of the dry fluid discharged from the interior space per unit time during the flow step is 0, or the difference is within a threshold value.

[0019] In one embodiment, the controller controls the fluid supply unit and the fluid discharge unit so that the pressure in the internal space is maintained at a set pressure during the flow step.

[0020] In one embodiment, the set pressure is the same as, or higher than, the critical pressure used to maintain the supercritical state of the dry fluid in the internal space.

[0021] In one embodiment, the fluid discharge unit further includes a discharge valve mounted at the front end of the pressure regulating member, and wherein the controller controls the fluid discharge unit to open the discharge valve during the execution of a flow step.

[0022] In one embodiment, the heating element regulates the temperature to a level that compensates for the temperature drop in the drying fluid as it passes through the pressure regulating element.

[0023] In one embodiment, the heating element includes: a heating element configured to generate heat; and a temperature sensor configured to measure the temperature of the dry fluid flowing through the discharge line or the temperature of the heating element, wherein the heating element generates heat based on the measurement result of the temperature sensor.

[0024] In one embodiment, when the temperature sensor reading is below the lower limit of a preset temperature range, the heating element is activated to generate heat, and when the temperature sensor reading is above the upper limit of the preset temperature range, the heating element is deactivated to stop generating heat.

[0025] In one embodiment, the fluid supply unit includes: a fluid supply source for storing and supplying dry fluid; a supply line for fluid communication between the fluid supply source and an internal space; a flow control valve mounted on the supply line; and a heater mounted at or at the downstream end of the flow control valve.

[0026] This invention provides a substrate processing apparatus for removing residual processing liquid from a substrate using a supercritical drying fluid. The substrate processing apparatus includes: a chamber providing an internal space; a fluid supply unit configured to supply drying fluid to the internal space; a fluid discharge unit configured to discharge drying fluid from the internal space; and a controller configured to control the fluid supply unit and the fluid discharge unit. The controller controls the fluid supply unit to perform a pressurization step to pressurize the internal space to a set pressure by supplying drying fluid to the internal space, and controls the fluid supply unit and the fluid discharge unit to perform flow steps of supplying and discharging drying fluid to and from the internal space while maintaining the pressure of the internal space at the set pressure. The fluid discharge unit includes: a discharge line connected to the chamber; a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at the set pressure; and a heating element installed at or at the rear end of the pressure regulating member.

[0027] In one embodiment, the fluid discharge unit further includes a discharge valve mounted at the front end of the pressure regulating member, wherein the controller controls the fluid discharge unit to open the discharge valve while a flow step is being performed.

[0028] In one embodiment, the heating element regulates the temperature to a level that can compensate for the temperature drop of the drying fluid as it passes through the pressure regulating element.

[0029] In one embodiment, the heating component includes: a heating element configured to generate heat; and a temperature sensor configured to measure the temperature of the dry fluid flowing through the discharge line or the temperature of the heating element, wherein the heating element generates heat based on the measurement result of the temperature sensor.

[0030] In one embodiment, when the temperature sensor reading is below the lower limit of a preset temperature range, the heating element is activated to generate heat, and when the temperature sensor reading is above the upper limit of the preset temperature range, the heating element is deactivated to stop generating heat.

[0031] In one embodiment, the fluid supply unit includes: a fluid supply source for storing and supplying dry fluid; a supply line for fluid communication between the fluid supply source and an internal space; a flow control valve installed at the supply line; and a heater installed at or at the rear end of the flow control valve.

[0032] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing an internal space; a transfer robot configured to transfer a substrate having residual processing liquid into the internal space; a fluid supply unit configured to supply a drying fluid containing carbon dioxide into the internal space; a fluid discharge unit configured to discharge the drying fluid from the internal space; and a controller configured to control the fluid supply unit and the fluid discharge unit, wherein the fluid discharge unit includes: a discharge line connected to the chamber; a pressure regulating member mounted on the discharge line and configured to regulate the pressure of the internal space to a set pressure; and a heating member configured to compensate for a temperature drop in the drying fluid as it passes through the pressure regulating member.

[0033] In one embodiment, the substrate processing apparatus further includes a controller, wherein the controller controls a fluid supply unit to perform a pressurization step for pressurizing the internal space to a set pressure by supplying dry fluid to the internal space, and controls the fluid supply unit and the fluid discharge unit to perform a flow step, wherein the fluid discharge unit generates flow of dry fluid in the internal space by discharging dry fluid from the internal space while supplying dry fluid to the internal space.

[0034] In one embodiment, the heating element is a sleeve heater mounted around the pressure regulating element.

[0035] In one embodiment, the heating element is a block heater installed at the discharge line and at a rear end further than the pressure regulating element.

[0036] According to embodiments conceived in this invention, the substrate can be processed effectively.

[0037] According to embodiments of the present invention, the drying efficiency of the substrate can be improved.

[0038] According to embodiments of the present invention, the drying efficiency of the substrate can be improved.

[0039] According to embodiments of the present invention, the time required to perform the drying process for drying substrates can be reduced.

[0040] According to embodiments of the present invention, the generation of impurities (such as particles) can be minimized during the execution of a drying process for drying a substrate.

[0041] According to embodiments of the present invention, the temperature drop that may occur when the drying fluid flows through the pressure regulating member can be compensated.

[0042] According to embodiments of the present invention, the problem of treatment fluid adhering to discharge lines can be minimized.

[0043] The effects of this invention are not limited to those described above, and those skilled in the art will understand from the following description other effects not mentioned. Attached Figure Description

[0044] Referring to the following figures, the above and other objects and features will become clear from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts in the various figures, and wherein:

[0045] Figure 1 The pressure changes inside the treatment chamber used to perform a conventional supercritical drying process are shown.

[0046] Figure 2 This is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0047] Figure 3 schematically shown Figure 1 An example of a liquid handling chamber.

[0048] Figure 4 schematically shown Figure 1 An example of a drying chamber.

[0049] Figure 5 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0050] Figure 6 The execution was shown Figure 5 The liquid handling chamber is used for liquid handling steps.

[0051] Figure 7 The execution was shown Figure 5 The first pressurization step is in the drying chamber.

[0052] Figure 8 The execution was shown Figure 5 The second pressurization step is in the drying chamber.

[0053] Figure 9 The execution was shown Figure 5 The drying chamber for the flow steps.

[0054] Figure 10 The execution was shown Figure 5 The first exhaust step is the drying chamber.

[0055] Figure 11 The execution was shown Figure 5 The second exhaust step is the drying chamber.

[0056] Figure 12 The pressure changes in the internal space of the body are shown during the drying process conceived in this invention.

[0057] Figure 13 The schematic diagram shows the installation of Figure 4 Pressure regulating components and heating components at the flow pipeline.

[0058] Figure 14 This indicates that the heating element is not installed. Figure 4 The graph shows the temperature change of the dry fluid at the rear end of the pressure regulating component in the flow pipeline.

[0059] Figure 15 A substrate processing apparatus according to another embodiment of the present invention is shown. Detailed Implementation

[0060] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of relevant known techniques may be omitted where it may obscure the essence of the inventive concept.

[0061] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the concepts of the invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. It will be further understood that, when used in this specification, the terms “comprising” and / or “including” designate the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “example” is intended to refer to an example or illustration.

[0062] It should be understood that while the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these provisions. These terms are used only to distinguish one element, component, region, layer, or portion from another region, layer, or portion. Therefore, the first element, first component, first region, first layer, or first portion discussed below may be referred to as a second element, second component, second region, second layer, or second portion without departing from the teachings of the concept of the invention.

[0063] It should be understood that when an element or layer is referred to as "in," "connected to," "attached to," or "covering" another element or layer, it can be directly in, connected to, attached to, or cover the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as "directly in," "directly connected to," or "directly attached to" another element or layer, there are no intermediate elements or layers. Other terms such as "between," "adjacent," "close to," etc., should be interpreted in the same manner.

[0064] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries should be interpreted as consistent with the context of the relevant art, and not as ideal or overly formal.

[0065] Figure 2 This is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0066] Reference Figure 2 The substrate processing apparatus includes a transposition module 10, a processing module 20, and a controller 30. The transposition module 10 and the processing module 20 are arranged along one direction. In the following text, the direction along which the transposition module 10 and the processing module 20 are arranged will be referred to as the first direction X, the direction perpendicular to the first direction X will be referred to as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y will be referred to as the third direction Z.

[0067] The transposition module 10 transfers the substrate W from the container C containing the substrate W to the processing module 20, and stores the substrate W, which has been processed at the processing module 20, in the container C. The transposition module 10 is longitudinally positioned in the second direction Y. The transposition module 10 has a loading port 12 and a transposition frame 14. The transposition frame 14 is located between the loading port 12 and the processing module 20. The container C containing the substrate W is placed on the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged along the second direction Y.

[0068] Regarding container C, a sealed container, such as a front-opening unified pod (FOUP), can be used. Container C can be placed on loading port 12 by a conveyor (not shown) or by an operator, such as an overhead conveyor, overhead conveyor belt, or automated guided vehicle.

[0069] The indexing frame 14 is equipped with an indexing robot 120. A guide rail 124 can be provided in the indexing frame 14, with its longitudinal direction in a second direction Y. The indexing robot 120 can be configured to move along the guide rail 124. The indexing robot 120 may include a hand 122 on which a substrate W is placed. The hand 122 is capable of moving back and forth, rotating about a third direction Z, and moving along the third direction Z. Multiple hands 122 can be provided and spaced apart in the vertical direction, and each hand 122 can move back and forth independently of the others.

[0070] Controller 30 can control the substrate processing equipment. The controller may include: a process controller, such as a microprocessor (computer) that performs control of the substrate processing equipment; a user interface, such as a keyboard for operator command input to manage the substrate processing equipment, a display for visualizing and showing the operation of the substrate processing equipment; and a storage unit that stores control programs for executing processes performed in the substrate processing equipment under the control of the process controller, various data, and programs (i.e., processing schemes) for executing various processes in each component according to processing conditions. Furthermore, the user interface and storage unit can be connected to the process controller. The processing scheme can be stored in a storage medium in the storage unit, which can be a hard disk, a portable storage disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0071] The controller 30 can control the substrate processing equipment to perform the substrate processing method described below. For example, the controller 30 can control the fluid supply unit 530 and the fluid discharge unit 550 to perform the substrate processing method.

[0072] Processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides a space for temporarily holding substrates W to be moved into and out of the processing module 20. The liquid processing chamber 400 supplies liquid to the substrates W to perform a liquid processing process on the substrates W. The drying chamber 500 performs a drying process to remove residual liquid from the substrates W. The transfer chamber 300 transfers the substrates W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0073] The longitudinal direction of the transfer chamber 300 can be arranged in the first direction X. The buffer unit 200 can be arranged between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be arranged on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 can be arranged along the second direction Y. The buffer unit 200 can be located at one end of the transfer chamber 300.

[0074] According to one embodiment, liquid processing chambers 400 can be arranged on both sides of the transfer chamber 300, and drying chambers 500 can be arranged on both sides of the transfer chamber 300, with the liquid processing chambers 400 positioned closer to the buffer unit 200 than the drying chambers 500. In some embodiments, on one and / or both sides of the transfer chamber 300, the liquid processing chambers 400 can be arranged in an A×B pattern along a first direction X and a third direction Z (A and B are natural numbers greater than 1 or equal to 1). In some embodiments, on one and / or both sides of the transfer chamber 300, the drying chambers 500 can be arranged in a C×D pattern along a first direction X and a third direction Z (C and D are natural numbers greater than 1 or equal to 1). In some embodiments, only the liquid processing chamber 400 can be arranged on one side of the transfer chamber 300, and only the drying chamber 500 can be arranged on the other side of the transfer chamber 300.

[0075] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 can be provided in the transfer chamber 300, with its longitudinal direction aligned in a first direction X. The transfer robot 320 can be configured to move along the guide rail 324. The transfer robot 320 may include a hand 322 on which a substrate W is placed. The hand 322 can be configured to be movable forward and backward, rotatable about a third direction Z as an axis, and movable along the third direction Z. Multiple hands 322 are spaced apart in the vertical direction, and each hand 322 can move forward and backward independently of the others.

[0076] The buffer unit 200 includes multiple buffers 220, on which the substrate W is placed. The buffers 220 can be configured to be spaced apart from each other in the third direction Z. The front and back of the buffer unit 200 are open. The front is the surface facing the indexing module 10, and the back is the surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320 can access the buffer unit 200 through the back.

[0077] Figure 3 It is shown schematically. Figure 1 A view of an embodiment of the liquid handling chamber. (Refer to...) Figure 3The liquid handling chamber 400 includes an outer shell 410, a cup-shaped part 420, a support unit 440, a liquid supply unit 460, and a lifting unit 480.

[0078] The housing 410 may have an internal space in which the substrate W is processed. The housing 410 may have a generally hexahedral shape. For example, the housing 410 may have a cuboid shape. In addition, an opening (not shown) may be formed in the housing 410 through which the substrate W is inserted or removed. Furthermore, a door (not shown) for selectively opening and closing the opening may be installed at the housing 410.

[0079] The cup-shaped portion 420 may have a container shape with an opening at the top. The cup-shaped portion 420 may have a processing space in which liquid processing can be performed on the substrate W. A support unit 440 supports the substrate W within this processing space. A liquid supply unit 460 supplies the processing liquid to the substrate W supported by the support unit 440. Various types of processing liquid can be provided, and the processing liquid can be supplied to the substrate W sequentially. A lifting unit 480 adjusts the relative height between the cup-shaped portion 420 and the support unit 440.

[0080] In one embodiment, the cup-shaped portion 420 has a plurality of recovery containers 422, 424, and 426. Each recovery container 422, 424, and 426 has a recovery space for recovering liquid used in substrate processing. Each of the recovery containers 422, 424, and 426 is arranged in an annular shape around the support unit 440. During the liquid processing process, the processing liquid dispersed due to the rotation of the substrate W is introduced into the recovery space through inlets 422a, 424a, and 426a of each respective recovery container 422, 424, and 426. According to an embodiment, the cup-shaped portion 420 has a first recovery container 422, a second recovery container 424, and a third recovery container 426. The first recovery container 422 is arranged around the support unit 440, the second recovery container 424 is arranged around the first recovery container 422, and the third recovery container 426 is arranged around the second recovery container 424. The second inlet 424a, which introduces liquid into the second recovery container 424, may be located above the first inlet 422a, which introduces liquid into the first recovery container 422, and the third inlet 426a, which introduces liquid into the third recovery container 426, may be located above the second inlet 424a.

[0081] The support unit 440 has a support plate 442 and a drive shaft 444. The top surface of the support plate 442 is generally circular and may have a diameter larger than that of the substrate W. A support pin 442a is provided at the edge region of the support plate 442 to support the bottom surface of the substrate W, and the support pin 442a is configured to protrude from the support plate 442 such that the substrate W is spaced apart from the support plate 442 by a predetermined distance. A locking pin 442b is provided at the edge of the support plate 442. The locking pin 442b is configured to protrude upward from the support plate 442 and support the edge of the substrate W, so that the substrate W is stably held by the support unit 440 when the substrate W rotates. The drive shaft 444 is driven by a driver 446, connected to the center of the bottom surface of the support plate 442, and rotates the support plate 442 about its central axis.

[0082] According to one embodiment, the liquid supply unit 460 may include a nozzle 462. The nozzle 462 can supply a processing liquid to the substrate W. The processing liquid may be a chemical, a rinsing solution, or an organic solvent. The chemical may be a chemical with strong acid or strong base properties. Furthermore, the rinsing solution may be deionized water. Additionally, the organic solvent may be isopropanol (IPA).

[0083] Furthermore, the liquid supply unit 460 may include a plurality of nozzles 462, and each nozzle 462 may supply a different type of processing liquid. For example, one of the nozzles 462 may supply chemicals, another nozzle 462 may supply rinsing fluid, and yet another nozzle 462 may supply organic solvents. Moreover, the controller 30 may control the liquid supply unit 460 to supply organic solvents to the substrate W from one of the nozzles 462 after supplying rinsing fluid to the substrate W from the other nozzle. Accordingly, the rinsing fluid supplied to the substrate W may be replaced with an organic solvent with low surface tension.

[0084] The lifting unit 480 moves the cup-shaped portion 420 vertically. The relative height between the cup-shaped portion 420 and the substrate W changes due to the vertical movement of the cup-shaped portion 420. As a result, the recovery containers 422, 424, and 426 for recovering the processing liquid can be changed according to the type of liquid supplied to the substrate W, thereby allowing for the recovery of the liquid separately. Unlike the above description, the cup-shaped portion 420 is fixedly mounted, while the lifting unit 480 allows the support unit 440 to move vertically.

[0085] Figure 4 It is shown schematically. Figure 1 A view of an embodiment of the drying chamber. (Refer to...) Figure 4According to an embodiment of the present invention, the drying chamber 500 can remove the processing liquid remaining on the substrate W by using a drying fluid G in a supercritical state. For example, the drying chamber 500 can use supercritical carbon dioxide (CO2) to remove organic solvents remaining on the substrate W.

[0086] The drying chamber 500 may include a main body 510, a temperature regulating member 520, a fluid supply unit 530, a fluid discharge unit 550, and a lifting member 560. The main body 510 may have an internal space 518 for processing the substrate W. The main body 510 may provide an internal space 518 for processing the substrate W. The main body 510 may provide an internal space 518 in which the substrate W is dried by a drying fluid G in a supercritical state. The main body 510 may also be referred to as a chamber or container.

[0087] The main body 510 may include a top body 512 and a bottom body 514. The top body 512 and the bottom body 514 may be combined to form an internal space 518. A substrate W may be supported in the internal space 518. For example, the substrate W may be supported by a support member (not shown) in the internal space 518. The support member may be configured to support the bottom surface of an edge region of the substrate W. Either the top body 512 or the bottom body 514 may be coupled to a lifting member 560 for vertical movement. For example, the bottom body 514 may be coupled to the lifting member 560 for vertical movement via the lifting member 560. Therefore, the internal space 518 of the main body 510 may be selectively sealed. In the above example, the bottom body 514 is coupled to the lifting member 560 for vertical movement, but the invention is not limited thereto. For example, the top body 512 may be coupled to the lifting member 560 for vertical movement.

[0088] Temperature regulating component 520 can heat the dry fluid G supplied to the internal space 518. Temperature regulating component 520 can increase the temperature of the internal space 518 of the main body 510. As the temperature regulating component 520 raises the temperature of the internal space 518, the dry fluid G supplied to the internal space 518 can become supercritical.

[0089] In addition, the temperature regulating component 520 can increase the temperature of the internal space 518 of the main body 510, so that the supercritical dry fluid G supplied to the internal space 518 remains in a supercritical state.

[0090] Furthermore, the temperature regulating member 520 can be embedded in the main body 510. For example, the temperature regulating member 520 can be embedded in either the top main body 512 or the bottom main body 514. For example, the temperature regulating member 520 can be disposed in the bottom main body 514. However, the inventive concept is not limited thereto, and the temperature regulating member 520 can be disposed at various locations capable of raising the temperature of the interior space 518. Furthermore, the temperature regulating member 520 can be a heater. However, the inventive concept is not limited thereto, and the temperature regulating member 520 can be modified in various ways to be a known device capable of raising the temperature of the interior space 518.

[0091] The fluid supply unit 530 can supply dry fluid G to the internal space 518 of the main body 510. The dry fluid G supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531, a supply line 533, a supply valve 535, a flow regulating valve 357, a valve heater 358, and a line heater 359.

[0092] Fluid supply source 531 can store and / or supply dry fluid G to the internal space 518 of body 510. The dry fluid G stored and / or supplied by fluid supply source 531 can be supplied to the internal space 518 through supply line 533.

[0093] The supply line 533 can fluidly connect the fluid supply source 531 and the internal space 518. The supply line 533 may include a main supply line 533a, a first supply line 533b, and a second supply line 533c. One end of the main supply line 533a can be connected to the fluid supply source 531. The other end of the main supply line 533a can branch into the first supply line 533b and the second supply line 533c.

[0094] Furthermore, the first supply line 533b can be a top supply line for supplying dry gas from the top of the interior space 518 of the body 510. For example, the first supply line 533b can supply dry gas to the interior space 518 of the body 510 in a top-to-bottom direction. For example, the first supply line 533b can be connected to the top body 512. Furthermore, the second supply line 533c can be a lower supply line for supplying dry gas from the bottom of the interior space 518 of the body 510. For example, the second supply line 533c can supply dry gas to the interior space 518 of the body 510 in a bottom-to-top direction. For example, the second supply line 533c can be connected to the bottom body 514.

[0095] The supply valve 535 may include a main supply valve 535a, a first supply valve 535b, and a second supply valve 535c.

[0096] The main supply valve 535a, which serves as an on / off valve (automatic valve), can be installed at the main supply line 533a. The first supply valve 535b, which serves as an on / off valve (automatic valve), can be installed at the first supply line 533b. The second supply valve 535c, which serves as an on / off valve (automatic valve), can be installed at the second supply line 533c.

[0097] Furthermore, a flow control valve 537, acting as a metering valve, can be installed at the main supply line 533a. The flow control valve 537 can be installed downstream of the main supply valve 535a. The drying fluid G can be adiabatically compressed as it passes through the flow control valve 537. Therefore, the drying fluid G can adiabatically expand downstream of the flow control valve 537. For example, the drying fluid G can adiabatically expand at the main supply line 533a downstream of the flow control valve 537. That is, the temperature of the drying fluid G can decrease downstream of the flow control valve 537. Therefore, condensation or freezing may occur at the main supply line 533a. To solve this problem, a valve heater 538 can be installed at the flow control valve 537. The valve heater 538 can be a sleeve heater installed around the flow control valve 537.

[0098] Heater 539 may include a main heater 539a, a first heater 539b, and a second heater 539c. The main heater 539a, as a block heater, may be installed at the main supply line 533a. The main heater 539a may be installed downstream of the flow control valve 537 (at its rear end). The first heater 539b, as a block heater, may be installed at the first supply line 533b. The first heater 539b may be installed downstream of the branch point of the main supply line 533a and upstream of the first supply valve 535b. The second heater 539c, as a block heater, may be installed at the second supply line 533c. The second heater 539c may be installed downstream of the branch point of the main supply line 533a and upstream of the second supply valve 535c.

[0099] The fluid discharge unit 550 can discharge dry fluid G from the internal space 518 of the main body 510. The fluid discharge unit 550 may include discharge lines, such as a main discharge line 551, a flow line 553, a slow exhaust line 555, and a fast exhaust line 557. Furthermore, the fluid discharge unit 550 may include discharge valves, such as a first discharge valve 553a, a second discharge valve 555a, and a third discharge valve 557a installed at the discharge lines. Additionally, the fluid discharge unit 550 may include a pressure regulating member 553b installed at the discharge lines, and orifices, such as a slow exhaust line orifice 555b and a fast exhaust line orifice 557b.

[0100] The main discharge line 551 can be connected to the body 510. The main discharge line 551 can discharge the dry fluid G supplied to the interior space 518 of the body 510 to the outside of the body 510. For example, one end of the main discharge line 551 can be connected to the body 510. One end of the main discharge line 551 can be connected to either the top body 512 or the bottom body 514. For example, the other end of the main discharge line 551 can also branch. For example, the other end of the main discharge line 551 can branch. Lines branching from the main discharge line 551 may include a flow line 553, a slow exhaust line 555, and a fast exhaust line 557.

[0101] The flow line 553 can branch off from the other end of the main discharge line 551. A first discharge valve 553a, a pressure regulating member 553b, and a heating member 559 can be installed at the main discharge line 551. The first discharge valve 553a can be installed upstream of the pressure regulating member 553b. The first discharge valve 553a can be an on / off valve (automatic valve). The first discharge valve 553a can selectively allow the drying fluid G to flow in the main discharge line 551. Additionally, the flow line 553 can be used in the flow step S33, which will be described later.

[0102] Furthermore, the pressure regulating member 553b can maintain the pressure of the internal space 518 of the main body 510 at a constant set pressure. Additionally, the pressure regulating member 553b can regulate the discharge flow rate of the drying fluid G discharged through the flow line 553 per unit time to maintain the pressure of the internal space 518 of the main body 510 at the set pressure. For example, the pressure regulating member 553b can be a back pressure regulator (BPR). For example, assuming the set pressure of the main body 510 for the internal space 518 is 150 bar, the pressure regulating member 553b can prevent the drying fluid G from being discharged through the flow line 553 until the set pressure of the main body 510 reaches 150 bar. Furthermore, when the pressure of the internal space 518 of the main body 510 reaches a pressure higher than the set pressure (e.g., 170 bar), the drying fluid G can be discharged through the flow line 553, allowing the pressure of the internal space 518 of the main body 510 to decrease to 150 bar.

[0103] Furthermore, the heating element 559 can be installed at the rear end of the pressure regulating element 553b. The heating element 559 can be a block heater. The heating element 559 can be installed at the flow line 553. The heating element 559 can include a heating element that generates heat, and a temperature sensor for measuring the temperature of the drying fluid flowing in the flow line 553 or the temperature of the heating element. As described later, the heating element can be adjusted to a temperature capable of compensating for the temperature drop caused by the drying fluid G passing through the pressure regulating element 553b. For example, the heating element of the heating element 559 can be adjusted to a temperature of approximately 200°C.

[0104] The heating element can generate heat based on the measurement results of the temperature sensor. For example, when the temperature sensor measurement result is below the lower limit of a preset temperature range, the heating element can be activated to generate heat. This is to compensate for the temperature drop that occurs at the rear end of the pressure regulating member 553b, which will be described later. Conversely, when the temperature sensor measurement result is above the upper limit of the preset temperature range, the heating element can be turned off to stop generating heat. This is to prevent the heating member 559 from overheating.

[0105] A slow exhaust line 555 can branch off from the other end of the main exhaust line 551. The slow exhaust line 555 can reduce the pressure in the internal space 518 of the main body 510. The slow exhaust line 555 can be used for the first exhaust step S34, which will be described later. A second exhaust valve 555a and a slow exhaust line orifice 555b can be installed at the slow exhaust line 555. The second exhaust valve 555a can be installed upstream of the slow exhaust line orifice 555b. The second exhaust valve 555a can be an on / off valve (automatic valve). Furthermore, the diameter of the flow path of the slow exhaust line orifice 555b can be smaller than the diameter of the flow path of the fast exhaust line orifice 557b, which will be described later.

[0106] A rapid exhaust line 557 can branch off from the other end of the main exhaust line 551. The rapid exhaust line 557 reduces the pressure in the internal space 518 of the main body 510. The rapid exhaust line 557 can be used for the second exhaust step S35, which will be described later. A third exhaust valve 557a and a rapid exhaust line orifice 557b can be installed at the rapid exhaust line 557. The third exhaust valve 557a can be installed upstream of the rapid exhaust line orifice 555b. The third exhaust valve 557a can be an on / off valve (automatic valve). Furthermore, the diameter of the flow path of the rapid exhaust line orifice 557b can be larger than the diameter of the flow path of the slow exhaust line orifice 555b, which will be described later.

[0107] Hereinafter, a method for processing a substrate according to an embodiment of the present invention will be described. The substrate processing method described below can be performed by a substrate processing apparatus. As described above, the controller 30 can control the substrate processing apparatus so that the substrate processing apparatus can perform the following substrate processing method.

[0108] Figure 5 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. (Refer to...) Figure 5 The substrate processing method according to an embodiment of the present invention may include a liquid processing step S10, a transfer step S20, and a drying step S30.

[0109] The liquid processing step S10 is a step of liquid processing the substrate W by supplying processing liquid to the substrate W. The liquid processing step S10 can be performed in the liquid processing chamber 400. For example, in the liquid processing step S10, the substrate W can be liquid processed by supplying processing liquid to the rotating substrate W (see [link to documentation]). Figure 6 The processing liquid supplied in the liquid processing step S10 can be at least one of the above-mentioned chemicals, rinsing solutions, or organic solvents. For example, in the liquid processing step S10, the substrate W can be rinsed by supplying rinsing solution to the rotating substrate W. Afterwards, an organic solvent can be supplied to the rotating substrate W to replace the rinsing solution remaining on the substrate W.

[0110] Transfer step S20 is the step of transferring the substrate W. Transfer step S20 may be the step of transferring the substrate W, which has already undergone liquid treatment in the processing chamber 400, to the drying chamber 500. For example, in transfer step S20, the transfer robot 320 can transfer the substrate W from the liquid treatment chamber 400 to the drying chamber 500. In transfer step S20, processing liquid may remain on the substrate W. For example, organic solvents may remain on the substrate W. That is, the substrate W may be transferred to the drying chamber 500 while still wetted by organic solvents.

[0111] Drying step S30 is the step of drying the substrate W. Drying step S30 can be performed in a drying chamber 500. In drying step S30, the substrate W is dried by supplying a drying fluid F to the substrate W within the internal space 518 of the main body 510. In drying step S30, the drying fluid F supplied to the substrate W can be in a supercritical state.

[0112] The flow step S33 can be performed after the pressurization steps S31 and S32. The flow step S33 can be a step in which flow is generated in the supercritical dry fluid G supplied to the internal space 518 of the body 510.

[0113] The venting steps S34 and S35 can be performed after the flow step S33. In the venting steps S34 and S35, the pressure in the internal space 518 of the main body 510 can be reduced. For example, in the venting steps S34 and S35, the pressure in the internal space 518 of the main body 510 can be reduced to atmospheric pressure.

[0114] The pressurization steps S31 and S32, the flow step S33, and the exhaust steps S34 and S35 described above will be described in more detail below.

[0115] The pressurization steps S31 and S32 may include a first pressurization step S31 and a second pressurization step S32.

[0116] In the first pressurization step S31, the second supply line 533c can supply the drying fluid G to the internal space 518 of the main body 510 (see...). Figure 7 In other words, in the first pressurization step S31, the drying fluid G can be supplied to the bottom portion of the internal space 518 of the main body 510, specifically, to the area below the substrate W supported within the internal space 518. In the first pressurization step S31, the pressure in the internal space 518 of the main body 510 can be increased to a second set pressure P2. The second set pressure P2 can be 120 bar. Furthermore, while performing the first pressurization step S31, the first discharge valve 553a can remain open. Since the pressure in the internal space 518 of the main body 510 does not reach the desired pressure (e.g., the second pressure P2, which will be described later) in the first pressurization step S31, the drying fluid G may not flow in the flow line 553 even when the first discharge valve 553a is open.

[0117] In the second pressurization step S32, the first supply line 533b can supply the drying fluid G to the internal space 518 of the body 510 (see...). Figure 8 That is, in the second pressurization step S32, the drying fluid G can be supplied to the top portion of the internal space 518, specifically, to the top of the substrate W supported in the internal space 518. In the second pressurization step S32, the pressure in the internal space 518 of the pressure body 510 can be pressurized to a first set pressure P1. The first set pressure P1 can be 150 bar. The first set pressure P1 can be equal to or higher than the critical pressure that allows the drying fluid G to remain in a supercritical state in the internal space 518. Furthermore, the first discharge valve 553a can remain open while the second pressurization step S32 is being performed. Since the pressure in the internal space 518 of the body 510 does not reach the desired pressure (e.g., the second pressure P2) in the second pressurization step S32, the drying fluid G may not flow in the flow line 553 even when the first discharge valve 553a is open.

[0118] In the above example, the supply of dry fluid G to the second pressurization step S32 is described as an example, but the invention is not limited thereto. For example, the second pressurization step S32 can be performed by supplying dry fluid G by the second supply line 533c, or by supplying dry fluid G to both the first supply line 533b and the second supply line 533c.

[0119] As pressurization steps S31 and S32 proceed, the pressure in the internal space 518 can reach the desired pressure. During pressurization steps S31 and S32, the internal space 518 can be heated by the temperature regulating member 520. Therefore, the dried fluid G supplied to the internal space 518 can undergo a phase change to a supercritical state. However, the inventive concept is not limited to this, and the dried fluid G in a supercritical state can be supplied to the internal space 518. In this case, since the internal space 518 reaches the desired pressure (e.g., a first set pressure P1) during pressurization steps S31 and S32, the dried fluid G supplied to the internal space 518 can be continuously maintained in a supercritical state.

[0120] In flow step S33, flow can be generated with respect to the supercritical dry fluid G supplied to the internal space 318. In flow step S33, the first supply line 533b can continuously supply the dry fluid G, and simultaneously, the flow line 553 can continuously discharge the dry fluid G (see...). Figure 9 That is, the supply and discharge of the drying fluid G can occur simultaneously. Specifically, in flow step S33, while the fluid supply unit 530 supplies the drying fluid G to the internal space 518, the fluid discharge unit 550 can continue to discharge the drying fluid G from the internal space 518. Furthermore, during flow step S33, the first discharge valve 553a installed at the front end of the pressure regulating member 553b can remain in the open state. Additionally, during flow step S33, the second discharge valve 555a and the third discharge valve 557a can remain in the closed state.

[0121] Furthermore, the pressure regulating member 553b regulates the discharge flow rate of the dry fluid G flowing in the flow line 553 per unit time, so that the pressure in the internal space 518 can be constantly maintained at a first set pressure P1 (e.g., 150 bar). In addition, the supply rate of the dry fluid G supplied by the first supply line 533b of the fluid supply unit 530 and the discharge rate discharged by the fluid discharge unit 550 through the flow line 553 can be kept the same (i.e., the difference between the supply flow rate and the discharge flow rate is zero or within a threshold). That is, in the flow step S33, the first supply line 533b continuously supplies the dry fluid G, and the flow line 553 continuously discharges the dry fluid G, thereby creating a flow of the dry fluid G in the internal space 518.

[0122] In the first exhaust step S34, the dry fluid G is discharged through the slow exhaust line 555, but the fluid supply unit 530 can stop supplying the dry fluid G (see...). Figure 10 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the first exhaust step S34, the second exhaust valve 555a can be opened and can remain open. Additionally, in the first exhaust step S34, the first exhaust valve 553a and the third exhaust valve 557a can remain closed.

[0123] In the second exhaust step S35, the dry fluid G is discharged through the fast exhaust line 557, but the fluid supply unit 530 can stop supplying the dry fluid G (see [link]). Figure 11 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the second exhaust step S35, the third exhaust valve 557a can be opened and can remain open. Additionally, in the second exhaust step S35, the first exhaust valve 553a and the second exhaust valve 555a can remain closed.

[0124] Furthermore, as described above, since the diameter of the flow path of the slow exhaust pipe orifice 555b is smaller than the diameter of the flow path of the fast exhaust pipe orifice 557b, the decompression speed in the first exhaust step S34 can be slower than the decompression speed in the second exhaust step S35.

[0125] Figure 12 The pressure changes within the body's internal space during the drying process conceived in this invention are shown. (Reference) Figure 12In the first pressurization step S31, the pressure in the internal space 518 can be increased to a second set pressure P2. The second set pressure P2 can be approximately 120 bar. In the second pressurization step S32, the pressure in the internal space 518 can be increased to a first set pressure P1. The first set pressure P1 can be approximately 150 bar. In the flow step S33, the pressure in the internal space 518 can be maintained at the first set pressure P1. In the first venting stage S34, the depressurization of the internal space 518 can be performed slowly, while in the second venting stage S35, the depressurization of the internal space 518 can be performed rapidly.

[0126] The effects of the present invention will be described in detail below.

[0127] The table below shows the processing time and the number of particles remaining on the substrate when the flow step S33 is performed using the pressure pulse method described above, and when the flow step S33 is performed using the continuous method of the present invention via the flow line 553. In this case, the pressurization steps S31 and S32 and the venting steps S34 and S35 are performed simultaneously. Furthermore, the amount of organic solvent remaining on the substrate W is also assessed in the same manner.

[0128] [Table 1]

[0129]

[0130] As can be seen from the table above, compared with the conventional pressure pulse method, when using the continuous method of the present invention for the flow step S33, even if the set time for performing the flow step S33 is reduced, the number of particles remaining on the substrate W is the same or lower. That is, according to the embodiment of the present invention, while reducing the time required to process the substrate W, the number of particles remaining on the substrate W can be maintained at the same or lower level as before. Furthermore, as can be seen from the above experimental data, the set time t2 to t3 for performing the flow step S33 can be any time within the range of 20 seconds to 65 seconds, preferably any time within the range of 25 seconds to 65 seconds. For example, the flow step S33 can be performed for 33 seconds or 40 seconds, showing a low particle level. In addition, in the flow step S33 of the present invention, the pressure of the internal space 518 can be maintained at any pressure between 120 bar and 150 bar. For example, in the flow step S33, the pressure of the internal space 518 can be maintained at about 150 bar.

[0131] Figure 13 The schematic diagram shows the installation of Figure 4 Pressure regulating components and heating components at the flow pipeline, and Figure 14 This indicates that the heating element is not installed. Figure 4A graph showing the temperature change of the drying fluid at the other end of the pressure regulating component in the flow line. (Reference) Figure 13 and Figure 14 The pressure regulating member 553b used to achieve the continuous flow as described above may include a body B having a flow path therethrough, a flange PL for adjusting the width of the flow path through which the dry fluid G can flow, a valve V mounted at the flange, a spring, and a pressure regulating screw. The temperature of the dry fluid G may decrease as it passes through the pressure regulating member 553b. This is because the dry fluid G is adiabatically compressed at one end of the valve V and may then adiabatically expand as it passes the rear end of the valve V and the rear end of the body B. In this case, as... Figure 14 As shown, the temperature of the drying fluid G may drop to approximately -50°C. In this case, condensation / freezing may occur at the rear end of the pressure regulating member 553b. Furthermore, organic solvents such as IPA are dissolved in the drying fluid G flowing through the internal space 518. When the temperature of the drying fluid G drops sharply as it passes through the pressure regulating member 553b, the solubility of the drying fluid G becomes very low. In this case, the organic solvent dissolved in the drying fluid G may precipitate and adhere to the flow line 553, thus potentially causing blockage at the flow line 553. According to an embodiment of the present invention, the heating member 559 is a block heater installed at the rear end of the pressure regulating member 553b to compensate for the temperature drop of the drying fluid G as it passes through the pressure regulating member 553b. Therefore, problems such as the aforementioned condensation / freezing and blockage at the flow line 553 can be solved.

[0132] In the above example, the heating element 559 is a block heater installed at the rear end of the pressure regulating element 553b, but the inventive concept is not limited thereto. For example, as... Figure 15 As shown, according to another embodiment, the heating element 559a can be a pressure regulating element 553b and more specifically, a sleeve heater mounted around the pressure regulating element 553b. In this case, the heating element of the heating element 559a, i.e., the sleeve heater, can be adjusted to a temperature of about 150°C to 200°C.

[0133] The effects of this invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand any effects not mentioned from the specification and drawings.

[0134] Although preferred embodiments of the present invention have been described and illustrated so far, the present invention is not limited to the specific embodiments described above. It should be noted that those skilled in the art to which the present invention pertains may implement the present invention in different ways without departing from the essence of the inventive concept claimed in the claims, and such modifications should not be understood separately from the technical spirit or intent of the present invention.

Claims

1. A substrate processing apparatus, comprising: A chamber, which provides internal space; A fluid supply unit configured to supply dry fluid to the internal space; A fluid discharge unit configured to discharge the dry fluid from the internal space; as well as Controller The fluid discharge unit includes: A discharge line connected to the chamber; A pressure regulating member, installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure; and A heating element is installed at the pressure regulating element or at the rear end of the pressure regulating element. The heating element is a sleeve-type heater mounted around the pressure regulating element, and the heating element is configured to regulate the temperature to compensate for the temperature drop of the drying fluid that occurs as the drying fluid passes through the pressure regulating element. The discharge pipeline includes: The main discharge line is connected to the chamber; A flow pipeline that branches off from the main discharge pipeline; A slow exhaust line, which branches off from the main exhaust line and is equipped with a first orifice; and A rapid exhaust line branches off from the main exhaust line and is equipped with a second orifice, the diameter of the flow path of the second orifice being larger than the diameter of the flow path of the first orifice. The pressure regulating component is installed at the flow line. The fluid supply unit includes: A fluid supply source for storing and supplying the dried fluid; A supply line for fluid communication between the fluid supply source and the internal space; A flow regulating valve, which is installed at the supply line; and A heater, installed at or behind the flow control valve, compensates for the temperature drop of the drying fluid as it passes through the flow control valve. The controller is configured as follows: The fluid supply unit and the fluid discharge unit are controlled to perform a flow step, wherein, for the flow step, the fluid discharge unit generates flow of dry fluid in the internal space by discharging the dry fluid from the internal space when the dry fluid is supplied to the internal space; and The fluid supply unit and the fluid discharge unit are controlled such that the difference between the supply rate of the dry fluid supplied to the internal space per unit time and the discharge rate of the dry fluid discharged from the internal space per unit time during the flow step is 0, or the difference is within a threshold value.

2. The substrate processing apparatus of claim 1, wherein, The controller is configured to control the fluid supply unit to perform a pressurization step of pressurizing the internal space to the set pressure by supplying the dried fluid into the internal space.

3. The substrate processing apparatus according to claim 2, wherein, The controller is configured to control the fluid supply unit and the fluid discharge unit such that the pressure in the internal space is maintained at the set pressure during the flow step.

4. The substrate processing apparatus according to claim 3, wherein, The set pressure is the same as, or higher than, the critical pressure used to maintain the dry fluid in a supercritical state within the internal space.

5. The substrate processing apparatus according to claim 2, wherein, The fluid discharge unit also includes a discharge valve installed at the front end of the pressure regulating member, and The controller is configured to control the fluid discharge unit to open the discharge valve while performing the flow step.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The heating component includes: Heating element, configured to generate heat; and A temperature sensor is configured to measure the temperature of the dry fluid flowing through the discharge line or the temperature of the heating element, and The heating element generates heat based on the measurement results of the temperature sensor.

7. The substrate processing apparatus according to claim 6, wherein, When the temperature sensor reading is below the lower limit of a preset temperature range, the heating element activates to generate the heat. When the temperature sensor reading is higher than the upper limit of the preset temperature range, the heating element is turned off to stop generating heat.

8. A substrate processing apparatus for removing residual processing liquid from a substrate using a supercritical drying fluid, the substrate processing apparatus comprising: A chamber, which provides internal space; A fluid supply unit configured to supply dry fluid to the internal space; A fluid discharge unit configured to discharge the dry fluid from the internal space; as well as A controller is configured to control the fluid supply unit and the fluid discharge unit. The controller is configured as follows: The fluid supply unit is controlled to perform a pressurization step by supplying the dry fluid into the internal space to increase the pressure of the internal space to a set pressure; The fluid supply unit and the fluid discharge unit are controlled to perform the flow steps of supplying the dried fluid into the internal space and discharging the dried fluid from the internal space, while maintaining the pressure of the internal space at the set pressure; and The fluid supply unit and the fluid discharge unit are controlled such that, during the flow step, the difference between the supply rate of the dry fluid supplied to the internal space per unit time and the discharge rate of the dry fluid discharged from the internal space per unit time is 0, or the difference is within a threshold value. The fluid discharge unit includes: A discharge line, which is connected to the chamber; A pressure regulating member, installed at the discharge line and configured to maintain the pressure of the internal space at the set pressure; and A heating element is installed at the pressure regulating element or at the rear end of the pressure regulating element. The heating element is a sleeve-type heater mounted around the pressure regulating element, and the heating element is configured to regulate the temperature to compensate for the temperature drop of the drying fluid that occurs as the drying fluid passes through the pressure regulating element. The discharge pipeline includes: The main discharge line is connected to the chamber; A flow pipeline that branches off from the main discharge pipeline; A slow exhaust line, which branches off from the main exhaust line and is equipped with a first orifice; and A rapid exhaust line branches off from the main exhaust line and is equipped with a second orifice, the diameter of the flow path of the second orifice being larger than the diameter of the flow path of the first orifice. The pressure regulating component is installed at the flow line. The fluid supply unit includes: A fluid supply source for storing and supplying the dried fluid; A supply line for fluid communication between the fluid supply source and the internal space; A flow regulating valve, which is installed at the supply line; and A heater, installed at or behind the flow control valve, is provided to compensate for the temperature drop of the drying fluid as it passes through the flow control valve.

9. The substrate processing apparatus according to claim 8, wherein, The heating component includes: Heating element, configured to generate heat; and A temperature sensor is configured to measure the temperature of the dried fluid flowing through the discharge line or the temperature of the heating element. The heating element generates heat based on the measurement results of the temperature sensor.

10. The substrate processing apparatus according to claim 9, wherein, When the temperature sensor reading is below the lower limit of a preset temperature range, the heating element activates to generate the heat. When the temperature sensor reading is higher than the upper limit of the preset temperature range, the heating element is turned off to stop generating heat.

11. A substrate processing apparatus, comprising: A chamber, which provides internal space; A transfer robot is configured to transfer a substrate with residual processing liquid into an internal space. A fluid supply unit configured to supply a dry fluid containing carbon dioxide to the interior space; A fluid discharge unit configured to discharge the dry fluid from the internal space; as well as A controller configured to control the fluid supply unit and the fluid discharge unit; The fluid discharge unit includes: A discharge line, which is connected to the chamber; A pressure regulating component, which is installed at the discharge line and configured to regulate the pressure of the internal space to a set pressure; A discharge valve, which is installed at the front end of the pressure regulating member; and A heating element is configured to compensate for the temperature drop of the drying fluid as it passes through the pressure regulating element. The heating element is a sleeve-type heater mounted around the pressure regulating element, and the heating element is configured to regulate the temperature to compensate for the temperature drop of the drying fluid that occurs as the drying fluid passes through the pressure regulating element. The discharge pipeline includes: The main discharge line is connected to the chamber; A flow pipeline that branches off from the main discharge pipeline; A slow exhaust line, which branches off from the main exhaust line and is equipped with a first orifice; and A rapid exhaust line branches off from the main exhaust line and is equipped with a second orifice, the diameter of the flow path of the second orifice being larger than the diameter of the flow path of the first orifice. The pressure regulating component is installed at the flow line. The fluid supply unit includes: A fluid supply source for storing and supplying the dried fluid; A supply line for fluid communication between the fluid supply source and the internal space; A flow regulating valve, which is installed at the supply line; and A heater, installed at or behind the flow control valve, compensates for the temperature drop of the drying fluid as it passes through the flow control valve. The controller is configured as follows: The fluid supply unit is controlled to perform a pressurization step by supplying the dry fluid into the internal space to increase the pressure of the internal space to the set pressure; The fluid supply unit and the fluid discharge unit are controlled to perform a flow step, wherein the fluid discharge unit generates a flow of dry fluid in the internal space by discharging the dry fluid from the internal space while the dry fluid is supplied to the internal space; Control the fluid supply unit and the fluid discharge unit to maintain the pressure of the internal space at the set pressure, and The fluid discharge unit is controlled to open the discharge valve while the flow step is being performed.

Images