A fin-line terahertz multi-phase shifter based on gallium arsenide diodes

By designing a fin-line terahertz multi-phase shifter based on gallium arsenide diodes and using voltage to control the change of the equivalent dielectric constant of the fin line, the problems of large insertion loss, small phase shift range and complex structure of existing terahertz wave phase modulation devices are solved, and low insertion loss multi-bit phase modulation and device miniaturization are achieved.

CN115588828BActive Publication Date: 2025-09-26YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE (HUZHOU)
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Patent Information

Application Number
CN202211083798.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-09-06
Publication Date
2025-09-26
Estimated Expiration
2042-09-06

AI Technical Summary

Technical Problem

Existing terahertz wave phase modulation devices have few phase shifting technology solutions, cannot adapt to different environments, have large insertion loss, small phase shift range, complex structure and low integration.

Method used

A fin-line terahertz multi-phase shifter based on gallium arsenide diodes is designed. The fin line and probe-type microstructure phase shifter are combined. The on-off state of the gallium arsenide diode is controlled by voltage to change the equivalent dielectric constant of the fin line, thereby achieving multi-bit terahertz wave phase shift. The phase shifters are superimposed in a centrally symmetrical and parallel arrangement to reduce insertion loss and device size.

Benefits of technology

Multi-bit terahertz phase modulation with low insertion loss and high linearity is achieved, the device size is reduced, it can adapt to different working environments, and the system's operating speed and integration are improved.

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Abstract

The present invention belongs to the field of electromagnetic functional devices, and specifically relates to a fin-line terahertz multi-phase shifter based on a gallium arsenide diode, comprising: a rectangular waveguide input port, a substrate, a rectangular waveguide-fin-line transition structure, a fin-line structure, a probe-type microstructure phase shifter unit, its feeding opening portion, a fin-line-rectangular waveguide transition structure, and a rectangular waveguide output port. The present invention addresses the problems of the existing terahertz wave phase modulator having few phase shifting technical solutions, large insertion loss during phase shifting, a small phase shift range, a large device size, and low integrability. By controlling the on-off of the diode on the probe-type microstructure phase shifter unit by voltage, the perturbation intensity of the probe on the fin line is changed, so that the equivalent dielectric constant of the fin line changes, thereby achieving the phase shift of the terahertz wave; then, by superimposing the phase shifters in a centrally symmetrical and parallel arrangement, a low-insertion-loss multi-bit terahertz wave phase shift is finally achieved, ensuring a good working state and promoting the development of terahertz phase control technology.
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