Low dishing oxide CMP polishing composition for shallow trench isolation applications and method for preparing the same

By using ceria-coated inorganic oxide abrasives and a two-type chemical additive polishing composition in the STI CMP process, the problems of oxide film and SiN film removal rate adjustment and groove recess reduction are solved, achieving a more uniform and adjustable polishing effect.

CN115698207BActive Publication Date: 2025-04-01VERSUM MATERIALS US LLC
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Patent Information

Application Number
CN202180038648.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-06-29
Filing Date
2021-05-25
Publication Date
2025-04-01
Estimated Expiration
2041-05-25

AI Technical Summary

Technical Problem

The prior art is difficult to effectively adjust the removal rate of oxide film and SiN film in shallow groove isolation (STI) chemical mechanical polishing (CMP) process, and it is difficult to reduce oxide groove recesses and achieve a more uniform polishing effect.

Method used

Using an STI CMP polishing composition containing ceria-coated inorganic oxide abrasives and a dual-type chemical additive, the removal rate of oxide and SiN films is adjusted by using siloxane-containing compounds and nonionic organic molecules with polyhydroxy functional groups over a wide pH range and reducing oxide groove recesses.

Benefits of technology

Adjustable oxide film and HDP film removal rates, optimized SiN film removal rates and highly adjustable TEOS:SiN selectivity, significantly reducing oxide groove recesses and improving polishing effects.

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Abstract

The present invention provides a shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing composition, a method of using the same, and a system. The CMP polishing composition comprises an abrasive of inorganic oxide particles coated with ceria, such as ceria-coated silica; and a dual chemical additive for providing an adjustable oxide film removal rate and an adjustable SiN film removal rate; low oxide trench depression and high oxide:SiN selectivity. The dual chemical additive comprises (1) at least one siloxane-containing compound, which comprises at least one of ethylene oxide and propylene oxide (EO-PO) groups and at least one of substituted ethylenediamine groups on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.
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