A substrate position detection apparatus, system and method thereof

Abstract

The application discloses a substrate position detection device, system and method. The device comprises a carrier disk which is placed on the upper surface of an electrostatic chuck in a reaction cavity by a conveying mechanism, and the placement position of the carrier disk on the conveying mechanism has a corresponding relationship with the placement position of a substrate on the conveying mechanism; a plurality of capacitor components are arranged on the bottom surface of the carrier disk, and the capacitance value of the capacitor components depends on the relative position between the capacitor components and the recess; and an operation unit calculates the relative position of the carrier disk and the upper surface of the electrostatic chuck by the capacitance value of the plurality of capacitor components, so as to obtain the relative position of the substrate and the upper surface of the electrostatic chuck. The device combines the carrier disk, the capacitor components and the operation unit, and realizes the detection of the centering between the substrate and the electrostatic chuck by using the existing recess of the electrostatic chuck, so that the processing difficulty is reduced without additional processing of the components in the cavity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more specifically to a substrate position detection device, system, and method thereof. Background Technology

[0002] In the manufacturing process of semiconductor devices, processes such as plasma etching, physical vapor deposition, and chemical vapor deposition are commonly used to micro-machining semiconductor components or substrates. Plasma-assisted etching (PAE) can be included in the micro-machining process, which is typically performed within a reaction chamber. Plasma etching within the reaction chamber is a crucial process for fabricating the substrate into the designed pattern. Throughout the entire process, the alignment between the substrate and the lower electrode assembly has a significant impact on the etching effect.

[0003] In existing plasma processing systems, the substrate is transferred to the lower electrode assembly within the reaction chamber. The plasma environment between the lower and upper electrode assemblies then acts on the substrate to create an etching pattern. However, in routine maintenance, the substrate needs to be transferred in and out multiple times using a conveyor mechanism. After repeated operations, it is difficult to guarantee the concentricity between the substrate and the lower electrode assembly within the reaction chamber. The substrate's placement may shift, thus affecting the etching effect.

[0004] In practical applications, substrate misalignment is gradual. Initial misalignment is not easily detected, but becomes more noticeable after accumulating to a certain extent. Currently, the concentricity between the substrate and the lower electrode assembly is usually detected by examining the etched pattern on the substrate. However, by this time, previous processes have already been performed. If a significant misalignment is detected at this stage, it can lead to a waste of etching material and time, and significantly impact the yield, productivity, quality, and process stability of the fabricated devices. Furthermore, existing technologies also employ opening a cavity to detect the concentricity between the substrate and the lower electrode assembly. Operators open the cavity to verify the positional relationship between the substrate and the lower electrode assembly and perform multiple wafer transfers to achieve substrate alignment. However, this method is time-consuming and may affect the operating time of the plasma processing system, while also failing to achieve precise control over the concentricity between the substrate and the lower electrode assembly. Summary of the Invention

[0005] The purpose of this invention is to provide a substrate position detection device, system, and method thereof. This device combines a carrier disk, a capacitor assembly, and a computing unit, and utilizes the existing recess of the electrostatic chuck to detect the alignment between the substrate and the electrostatic chuck. No additional processing of the internal components is required, thus reducing the processing difficulty.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] A substrate position detection device is used for positioning a substrate within a plasma processing reaction chamber. The substrate can be placed on an electrostatic chuck via a transfer mechanism. The upper surface of the electrostatic chuck has several recesses at fixed positions, comprising:

[0008] The carrier disk is placed on the upper surface of the electrostatic chuck in the reaction chamber via the conveying mechanism. The placement position of the carrier disk on the conveying mechanism corresponds to the placement position of the substrate on the conveying mechanism.

[0009] Multiple capacitor components are disposed on the bottom surface of the carrier disk, and the capacitance value of the capacitor component depends on the relative position between the capacitor component and the recess.

[0010] The arithmetic unit calculates the relative position of the carrier disk and the upper surface of the electrostatic chuck by using the capacitance values ​​of the multiple capacitor components, so as to obtain the relative position of the substrate and the upper surface of the electrostatic chuck.

[0011] Optionally, the capacitor assembly consists of a pair of electrodes, and when the carrier disk is placed on the upper surface of the electrostatic chuck, at least two capacitor assemblies are located above the recess.

[0012] Optionally, a plurality of capacitor components are arranged above each of the recesses to expand the range in which the recesses can be detected by the capacitor components.

[0013] Optionally, the electrodes of the capacitor assembly above each of the recesses are arranged in parallel with the electrodes of the adjacent capacitor assembly.

[0014] Optionally, the electrodes of the capacitor assembly above each recess are arranged perpendicularly to the electrodes of the adjacent capacitor assembly.

[0015] Optionally, the recessed portion may be a plurality of lifting pin holes, which are evenly arranged along the circumference.

[0016] Optionally, the recessed portion is an air groove, which is distributed at different positions on the surface of the electrostatic chuck, and multiple capacitor components are respectively arranged opposite to different positions of the air groove.

[0017] Optionally, the gas groove includes a plurality of straight gas grooves facing the center, and each electrode of the capacitor assembly above the gas groove is arranged along the direction of the corresponding straight gas groove.

[0018] Optionally, the gas groove includes an arc-shaped gas groove, and each electrode of the capacitor assembly above the gas groove is arranged along the tangential direction of the arc-shaped gas groove.

[0019] Optionally, the electrode length of the two electrodes is 0.5 to 5 times the electrode spacing between the two electrodes.

[0020] Optionally, the electrode spacing between the two electrodes is the same as the size of the recess.

[0021] Optionally, the electrodes are wrapped with insulating material.

[0022] Optionally, the capacitor assembly can be either non-linear or linear.

[0023] Optionally, the bottom of the carrier disk has several groove structures, and the capacitor assembly is disposed in the groove structures.

[0024] Optionally, the computing unit is disposed inside the reaction chamber. The computing unit includes a processor, a memory, and a wireless communication device. The processor is used to calculate the relative position between the carrier disk and the upper surface of the electrostatic clamping disk based on the capacitance value of the capacitor assembly, and to obtain the relative position between the substrate and the upper surface of the electrostatic clamping disk. The memory is used to store the relative position information calculated by the processor and the capacitance value of the capacitor assembly. The wireless communication device is used to transmit the relative position information to the outside of the reaction chamber.

[0025] Optionally, the computing unit includes a memory, a wireless communication device, and a processor. The memory and the wireless communication device are disposed inside the reaction chamber, and the processor is disposed outside the reaction chamber. The memory is used to store the capacitance value of the capacitor assembly and transmit it to the processor through the wireless communication device. The processor calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk based on the capacitance value of the capacitor assembly, and obtains the relative position of the substrate and the upper surface of the electrostatic clamping disk.

[0026] Furthermore, the present invention also provides a plasma processing system, comprising:

[0027] The substrate position detection device described in any of the above claims;

[0028] The reaction chamber has an electrostatic clamp at its bottom.

[0029] A placement cavity, used to place a substrate or a substrate position detection device;

[0030] A transmission cavity includes a transmission mechanism that transmits substrates or substrate position detection devices in each cavity. The transmission mechanism transmits the carrier disk to the electrostatic clamping disk in the reaction cavity. The computing unit calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk using the capacitance values ​​of multiple capacitor components.

[0031] Furthermore, the present invention also provides a method for centering and adjusting positioning using the substrate position detection device described in any one of the above claims, characterized in that it comprises:

[0032] Obtain the standard capacitance values ​​of each capacitor component when the carrier disk and the electrostatic clamp are coaxial;

[0033] A conveying mechanism is used to transmit the substrate position detection device into the reaction chamber. The conveying path parameters of the carrier disk are the same as those of the substrate. The capacitor assembly corresponds to the recessed part of the fixed position on the upper surface of the electrostatic chuck.

[0034] The arithmetic unit reads the capacitance value of each capacitor component and calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk in combination with the standard capacitance value.

[0035] Adjust the placement of the carrier disk on the electrostatic clamp based on the relative position information and measure again until the difference between the capacitance value of the capacitor assembly and the standard capacitance value is within the set range.

[0036] Optionally, changing the placement of the carrier disk specifically means changing the position of the carrier disk on the conveying mechanism.

[0037] Optionally, changing the placement of the carrier disk specifically involves changing the operating trajectory of the conveying mechanism.

[0038] Compared with the prior art, the present invention has the following advantages:

[0039] In a substrate position detection device, system, and method of the present invention, the substrate position detection device, through a carrier disk, capacitor assembly, and computing unit, etc., achieves the detection and alignment of the substrate and electrostatic chuck by means of normal process transfer, without the need for additional opening of the reaction chamber for manual detection and adjustment of the alignment between the two, thus avoiding the efficiency reduction caused by disrupting the vacuum environment of the reaction chamber.

[0040] Furthermore, the substrate position detection device utilizes the existing recess of the electrostatic chuck to achieve alignment detection between the substrate and the electrostatic chuck. The carrier disk can be used and removed as needed, eliminating the need for additional processing of the components within the reaction chamber or the installation of additional components within the reaction chamber. This reduces processing difficulty and saves internal space within the reaction chamber. Attached Figure Description

[0041] Figure 1 This invention relates to a plasma processing system;

[0042] Figure 2 This is a partial schematic diagram of a carrier disk and an electrostatic clamping disk according to the present invention;

[0043] Figure 3 This invention relates to a plasma treatment reaction chamber;

[0044] Figure 4 This is a schematic diagram showing the relative relationship between a capacitor assembly and an electrostatic clamp according to the present invention;

[0045] Figure 5 This is a schematic diagram of an electrostatic chuck with a lifting pin hole according to the present invention;

[0046] Figure 6 This is a schematic diagram of a capacitor assembly arrangement according to the present invention;

[0047] Figure 7 This is a schematic diagram of another capacitor assembly arrangement according to the present invention;

[0048] Figure 8 This is a schematic diagram of the arrangement of a first capacitor and a second capacitor according to the present invention;

[0049] Figure 9 This is a schematic diagram of the electrostatic chuck with air grooves according to the present invention;

[0050] Figure 10 This is a schematic diagram of a capacitor assembly arrangement according to the present invention;

[0051] Figure 11 This is a schematic diagram of another arrangement of the first and second capacitors according to the present invention. Detailed Implementation

[0052] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0053] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0054] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of one embodiment of the present invention.

[0055] Example 1

[0056] like Figure 1As shown, this invention provides a plasma processing system composed of multiple functional chambers, specifically including a substrate position detection device, a placement chamber 200, a transfer chamber 300, and various reaction chambers 400. Each chamber plays a crucial role in the thin film deposition process. In this invention, the types and quantities of chambers are set according to actual process requirements, and there is no limitation on the number. For example, the system may further include a Loadlock chamber for the substrate W to enter and exit the vacuum environment, a Cooldown chamber for cooling or buffering, and a Pre-Clean chamber, etc.

[0057] The placement cavity 200 includes multiple support platforms to support the substrates W. Furthermore, the placement cavity 200 includes an alignment module that uniformly aligns the substrates W placed on each support platform. A transmission cavity 300 is located between the placement cavity 200 and each of the reaction cavities 400. The transmission cavity 300 is equipped with a conveying mechanism that transports the substrates W between the cavities according to a preset route based on transmission data. An electrostatic chuck 411 is located at the bottom of each reaction cavity 400. The substrates W received in the reaction cavity 400 are placed on the electrostatic chuck 411 for processing. Initially, all substrates W are placed in the placement cavity 200. When certain substrates W require processing, the conveying mechanism of the transmission cavity 300 removes the substrates W to be processed from the placement cavity 200 and then transports them to the corresponding reaction cavity 400 for processing.

[0058] In this invention, the substrate position detection device includes a carrier disk 110, a plurality of capacitor components 120 disposed on the bottom surface of the carrier disk 110, and a computing unit.

[0059] Specifically, the carrier disk 110 is placed on the upper surface of the electrostatic chuck 411 within the reaction chamber 400 via a conveying mechanism. The placement position of the carrier disk 110 on the conveying mechanism corresponds to the placement position of the substrate W on the conveying mechanism, so the transmission path of the substrate W can be obtained through the transmission path of the carrier disk 110. Preferably, the conveying mechanism transmits the path data of the substrate W to be processed to the carrier disk 110, that is, the carrier disk 110 can simulate the actual transmission relationship of the substrate W. When the carrier disk 110 conveyed by the conveying mechanism coincides with the axis of the electrostatic chuck 411, the substrate W conveyed by it also coincides with the axis of the electrostatic chuck 411. Figure 2As shown, after the carrier disk 110 is introduced into the reaction chamber 400, the plurality of capacitor components 120 at the bottom of the carrier disk 110 correspond to the recessed portions fixed at positions on the upper surface of the electrostatic chuck 411. When the carrier disk 110 is displaced relative to the electrostatic chuck 411, that is, when the capacitor components 120 are displaced relative to the recessed portions, the capacitance value of the capacitor components 120 changes. When the carrier disk 110 and the electrostatic chuck 411 are coaxial, the capacitor components 120 have a standard capacitance value. When the conveying mechanism conveys the carrier disk 110 to the electrostatic chuck 411, each capacitor component 120 has a real-time capacitance value. The position of the recessed portion on the electrostatic chuck 411 is known and remains unchanged, and the position of the capacitor components 120 on the carrier disk 110 is known and remains unchanged. This invention determines the relative position of the carrier disk 110 and the electrostatic chuck 411 by the medium capacitance values ​​of the recessed portions and the capacitor components 120. When the real-time capacitance value of capacitor assembly 120 is the same as the standard capacitance value, carrier disk 110 and electrostatic clamp disk 411 are coaxial; when the two capacitance values ​​are different, their axes do not coincide.

[0060] In this embodiment, the computing unit calculates the relative position of the carrier disk 110 and the upper surface of the electrostatic clamp 411 by using the real-time capacitance values ​​of each capacitor component 120, and obtains the deviation relationship between the carrier disk 110 and the electrostatic clamp 411, so as to adjust the transmission trajectory data of the carrier disk 110 or substrate W transmitted by the subsequent transmission mechanism and optimize the alignment of the carrier disk 110 or substrate W with the electrostatic clamp 411.

[0061] Specifically, the calculation data from the computing unit can reveal whether the carrier disk 110 and the electrostatic chuck 411 have shifted. If a shift occurs, it indicates that the transmission trajectory data of the transmission mechanism needs adjustment. Based on the amount of shift, the adjustment amount for the transmission trajectory data of the transmission mechanism is determined to ensure good alignment between the substrate W and the electrostatic chuck 411 during subsequent transmission. This device uses the carrier disk 110 and capacitor assembly 120 to detect and adjust the alignment of the substrate W and the electrostatic chuck 411 through normal process transmission. Compared to the traditional method of opening the chamber and manually measuring and observing alignment, this invention eliminates the need to open the reaction chamber 400 to detect and adjust the alignment between the two, thus avoiding disruption of the vacuum environment of the reaction chamber 400. Furthermore, during the plasma processing system and etching process, the position or state of the electrostatic chuck 411 remains stable. The substrate position detection device uses the recess of the electrostatic chuck 411 to determine the positional relationship between the carrier disk 110 and the lower motor assembly, which helps to ensure the accuracy of the capacitor assembly 120 measurement and provides reliable data support for subsequent control.

[0062] Optionally, the capacitor assembly 120 consists of a pair of electrodes. When the carrier disk 110 is placed on the upper surface of the electrostatic chuck 411, at least two capacitor assemblies 120 on the bottom surface of the carrier disk 110 are located above the recess. When the capacitor assembly 120 is displaced relative to the recess, the overlap range between the two electrodes of the capacitor assembly 120 and the recess changes, and its capacitance value also changes accordingly. At least two capacitor assemblies 120 can further determine the approximate direction of change of the carrier disk 110.

[0063] It should be noted that the shape and size of the carrier disk 110 are not limited, as long as the bottom surface of the carrier disk 110 is flat and can fit against the upper surface of the electrostatic clamp 411. Preferably, the carrier disk 110 and the substrate W to be processed have the same specifications (mainly size and shape). Furthermore, the bottom of the carrier disk 110 is provided with several groove structures, and the capacitor assembly 120 is disposed in the groove structures to better achieve the fit between the carrier disk 110 and the upper surface of the electrostatic clamp 411, thereby improving the detection accuracy of the capacitor assembly 120.

[0064] In this embodiment, the computing unit is disposed within the reaction chamber. The computing unit includes a processor, a memory, and a wireless communication device. The processor is used to calculate the relative position of the carrier disk 110 and the upper surface of the electrostatic clamping disk 411 based on the capacitance value of the capacitor component 120, thereby determining the position of the substrate W and the upper surface of the electrostatic clamping disk 411. The memory is used to store the relative position information calculated by the processor and the capacitance value of the capacitor component 120. The wireless communication device is used to transmit the relative position information outside the reaction chamber for subsequent adjustment. However, the location of the computing unit is not limited to the above. For example, in another embodiment, the computing unit includes a memory, a wireless communication device, and a processor. The memory and the wireless communication device are disposed within the reaction chamber, and the processor is disposed outside the reaction chamber. The memory is used to store the capacitance value of the capacitor component 120 and transmit it to the processor via the wireless communication device. The processor calculates the relative position of the carrier disk 110 and the upper surface of the electrostatic clamping disk 411 based on the capacitance value of the capacitor component 120, thereby determining the position of the substrate W and the upper surface of the electrostatic clamping disk 411. In another embodiment, the capacitance value is read to the arithmetic unit after the storage unit on the carrier disk 110 is moved outside the reaction chamber 400.

[0065] In the initial state, each substrate W and carrier disk 110 is placed on the support platform of the placement cavity 200, and the alignment module aligns the substrate W and carrier disk 110 on each support platform. After the transmission mechanism of the transmission cavity 300 performs multiple input and output of substrate W, the carrier disk 110 can be transmitted using the same path parameters to detect and adjust the actual alignment between the current substrate W and the electrostatic clamp 411.

[0066] like Figure 3 As shown, this embodiment illustrates a plasma processing reaction chamber 400. The reaction chamber 400 comprises a reaction chamber 400 surrounded by a reaction chamber body 401 made of metal and a chamber end cap 402. A substrate transfer port 403 is provided on the reaction chamber body for transferring a substrate W between the inside and outside of the reaction chamber 400. The reaction chamber 400 includes a lower electrode assembly 410 disposed at the bottom of the reaction chamber 400. The lower electrode assembly 410 is equipped with an electrostatic chuck 411 made of ceramic material. The substrate W to be processed, which is introduced into the reaction chamber 400, is placed on the upper surface of the electrostatic chuck 411. The reaction chamber 400 further includes an upper electrode assembly 420 disposed opposite to the lower electrode assembly 410. The upper electrode assembly 420 is located at the top of the reaction chamber 400. At least one radio frequency power supply 430 is applied to the lower electrode assembly 410 through a matching network to dissociate the process gas into plasma, thereby generating plasma between the upper electrode assembly 420 and the lower electrode assembly 410. The plasma is used to etch the substrate W. Specifically, the plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules, and free radicals. These active particles can undergo various physical and / or chemical reactions with the surface of the substrate W to be treated, thereby changing the morphology of the substrate W and completing the treatment of the substrate W.

[0067] Furthermore, the electrostatic chuck 411 has a plurality of lifting pin holes 412. In actual use, a plurality of lifting pin assemblies contact the substrate W through the lifting pin holes 412 to achieve the lifting and lowering of the substrate W. In this embodiment, each of the lifting pin holes 412 is a recess, and the number of capacitor assemblies 120 is the same as the number of lifting pin holes 412. In other embodiments, there may be multiple capacitor assemblies 120 corresponding to each lifting pin hole 412. When the carrier disk 110 is introduced into the reaction chamber 400 and placed on the electrostatic chuck 411, each capacitor assembly 120 on the bottom surface of the carrier disk 110 corresponds one-to-one with the lifting pin hole 412, and the capacitor assembly 120 and the lifting pin hole 412 at least partially overlap (see [link to documentation]). Figure 4 The lifting pin hole 412 is filled with air, and the electrostatic chuck 411 is made of ceramic material. The size of the overlap between the capacitor assembly 120 and the lifting pin hole 412 directly affects the change in the dielectric composition between the electrodes of the capacitor assembly 120, and thus affects the dielectric constant of the capacitor assembly 120. The change in the capacitance value of the capacitor assembly 120 is used to determine whether the carrier disk 110 has shifted, which reflects whether a shift has occurred when transferring the substrate W, so as to determine whether the transfer parameters of the transfer mechanism need to be adjusted.

[0068] As can be seen from the above, the substrate position detection device utilizes the existing structure of the electrostatic chuck 411 to realize the alignment detection of the substrate W and the electrostatic chuck 411. The carrier disk 110 can be taken out as needed, without the need for additional processing of the components in the reaction chamber 400, and without the need to install additional components in the reaction chamber 400, which reduces the processing difficulty and saves the internal space of the reaction chamber 400.

[0069] In this embodiment, the capacitor assembly 120 is a first capacitor 121 composed of two electrodes, the two electrodes of the first capacitor 121 at least partially overlapping with the lifting pin hole 412. The capacitance value changes depending on the extent of overlap between the two electrodes of the first capacitor 121 and the lifting pin hole 412. Preferably, the distance between the plates of the two electrodes of the first capacitor 121 is the same as the diameter of the lifting pin hole 412, so that even a slight offset of the carrier disk 110 will be detected, achieving more accurate position detection of the carrier disk 110. Preferably, the lifting pin holes 412 on the electrostatic clamping plate 411 are uniformly and symmetrically arranged circumferentially, and the corresponding capacitor assemblies 120 are also uniformly and symmetrically arranged circumferentially.

[0070] Optionally, the electrode length of the two electrodes of the first capacitor 121 is 0.5 to 5 times the electrode spacing between the two electrodes, which can be set according to the processing difficulty and actual testing requirements.

[0071] The relationship between electrode length and electrode spacing affects the standard capacitance value during alignment, because C = εS / d. The relative position with the recess affects ε, and the electrode spacing corresponds to d. When the carrier disk 110 and the electrostatic chuck 411 are aligned, ε is also a fixed value, so C is fixed during alignment. In this embodiment, the electrode spacing between the two electrodes is the same as the size of the recess. When both are the same size, the response to changes in relative position is more sensitive because during alignment, the spacing directly faces the empty space, and ε depends only on the gap formed by the recess. If there is a slight misalignment, ε becomes a mixed value composed of the gap and the medium of the electrostatic chuck 411, and the value of ε varies with the proportions of each part.

[0072] Optionally, the two electrodes of the first capacitor 121 can be linear or have a certain curvature, i.e., non-linear, depending on the actual application scenario. Considering the manufacturing difficulty, the first capacitor 121 can be composed of a pair of straight cylindrical or square plates arranged in parallel. In this embodiment, the two electrodes of the first capacitor 121 are parallel linear electrodes.

[0073] like Figure 5 and Figure 6As shown, in this embodiment, the electrostatic clamp 411 has three lifting pin holes 412, which are evenly arranged around the circumference. The three capacitor components 120 on the bottom surface of the carrier disk 110 are arranged opposite to the lifting pin holes 412. In this embodiment, the even arrangement of the capacitor components 120 can reduce the computational difficulty of the computing unit. With the symmetrically arranged lifting pin holes 412, the standard capacitance value of a single capacitor component 120 is fixed when the carrier disk 110 and the electrostatic clamp 411 are aligned. When the two are not aligned, the difference between the real-time capacitance value of each capacitor component 120 and the standard capacitance value can be used to determine which capacitor component 120 has a larger offset, and then the carrier disk 110 can be adjusted accordingly.

[0074] In other embodiments, the number of lifting pin holes 412 can be other than a certain number. Preferably, the arrangement direction of each capacitor assembly 120 is the same. Figure 6 and Figure 7 As shown, the electrodes of the capacitor assembly 120 are arranged radially or circumferentially along the electrostatic chuck 411 to enable the detection of the offset of the carrier disk 110.

[0075] In another embodiment, the capacitor assembly 120 includes multiple capacitors, i.e., multiple capacitors are arranged above each recess to expand the range of the recess that can be detected by the capacitor assembly 120. For example, the capacitor assembly 120 includes a first capacitor 121 and a second capacitor 122 arranged in parallel. The parameters of the first capacitor 121 and the second capacitor 122 are the same, and the first capacitor 121 and the second capacitor 122 are arranged parallel or perpendicular to each other. The capacitor assembly 120 uses two capacitors to detect the same area, increasing the detection accuracy.

[0076] For example, such as Figure 8 As shown, the outer first capacitor 121 and the inner second capacitor 122 form a capacitor assembly 120. Both capacitors are arranged perpendicular to the diameter of the electrostatic clamp 411, and the three capacitor assemblies 120 are evenly arranged circumferentially. The first capacitor 121 and the second capacitor 122 at least partially overlap with the lifting pin hole 412. Based on the change in the capacitance values ​​of the first capacitor 121 and the second capacitor 122, the offset direction of the carrier disk 110 can be determined more intuitively. Figure 8 Taking the rightmost first capacitor 121 and second capacitor 122 as an example, when the overlap range between the outer first capacitor 121 and the lifting pin hole 412 increases, it indicates that the carrier disk 110 is shifted towards the center. Based on the change in capacitance value of the first capacitor 121 and the second capacitor 122, the relative offset between the carrier disk 110 and the electrostatic clamp 411 is calculated for subsequent adjustment.

[0077] Given the special environment of the plasma treatment reaction chamber 400, residual process gases or reaction waste gases may be present in the reaction chamber 400 when the carrier disk 110 is introduced into it. These gases may be corrosive. To prevent corrosion of the capacitor assembly 120 at the bottom of the carrier disk 110, the electrodes of the capacitor assembly 120 are made of copper, a material with low manufacturing cost. Each electrode is wrapped with an insulating material to prevent corrosion and ensure normal testing of the capacitance value. Furthermore, this also prevents corrosion of the copper electrodes within the chamber, thus avoiding metal and particulate contamination of the reaction chamber 400 and maintaining a clean environment. In this embodiment, the insulating material is polyimide, but it is not limited to this; other materials that can protect the electrodes can also be used.

[0078] Furthermore, the present invention also provides a method for centering and adjusting positioning using the substrate position detection device, the method comprising:

[0079] Obtain the standard capacitance value of each capacitor assembly 120 when the carrier disk 110 and the electrostatic clamp 411 are coaxial;

[0080] The carrier disk 110 is transferred into the reaction chamber 400 by a conveying mechanism. The conveying path parameters of the carrier disk 110 are the same as those of the substrate W. The capacitor assembly 120 corresponds to the recess on the upper surface of the electrostatic chuck 411.

[0081] The arithmetic unit reads the capacitance value of each capacitor component 120 and calculates the relative position of the carrier disk 110 and the upper surface of the electrostatic clamp 411 in combination with the standard capacitance value.

[0082] The carrier disk 110 is repositioned on the electrostatic chuck 411 according to the relative position information and measured again until the difference between the capacitance value of the capacitor assembly 120 and the standard capacitance value is within the set range.

[0083] Furthermore, the change of the placement of the carrier disk 110 specifically involves changing the position of the carrier disk 110 on the conveying mechanism or changing the running trajectory of the conveying mechanism. The above methods can be used to change the position of the carrier disk 110 on the electrostatic clamp 411.

[0084] In this embodiment, when the capacitance values ​​of each first capacitor 121 are equal, the carrier disk 110 and the electrostatic clamp 411 are coaxial. In this embodiment, each capacitor assembly 120 and the lifting pin hole 412 are uniformly arranged circumferentially. The equal capacitance values ​​of each first capacitor 121 indicate that the overlap range between each first capacitor 121 and each lifting pin hole 412 is the same. The dielectric composition between the two electrodes of the first capacitor 121 is the same, and their dielectric constants are the same. Therefore, the carrier disk 110 and the electrostatic clamp 411 are coaxial.

[0085] In this embodiment, when the capacitance values ​​of each of the second capacitors 122 are equal, the carrier disk 110 and the electrostatic clamp disk 411 are coaxial.

[0086] It should be noted that the arrangement of the first capacitor 121 and the second capacitor 122 is not limited to what is described above. Different specifications of capacitors can also be set according to actual needs in order to better obtain the relative displacement data of the carrier disk 110 and the electrostatic clamp disk 411.

[0087] Example 2

[0088] Based on the structural characteristics of the plasma processing system in Embodiment 1, this embodiment makes some changes to the structure of the reaction chamber 400 and the substrate position detection device, mainly to the electrostatic chuck 411 part of the reaction chamber 400 and the carrier disk 110 of the substrate position detection device.

[0089] To accommodate various requirements during the process, the electrostatic chuck 411 is provided with gas grooves 413, which are distributed at different positions on the surface of the electrostatic chuck 411. A gas delivery device delivers gas through these gas grooves 413. For example, the gas delivery device delivers helium gas to the back side of the substrate W through the gas grooves 413 to reduce the temperature of the substrate W and ensure etching performance. However, the gas delivered by the gas delivery device is not limited to helium; depending on the process design and requirements, it can also be other gases.

[0090] In this embodiment, the air groove 413 on the electrostatic chuck 411 is a recessed portion, and the bottom of the carrier disk 110 is provided with multiple capacitor components 120 corresponding to different positions of the air groove 413. Similar to the principle in Embodiment 1, when the carrier disk 110 is displaced relative to the electrostatic chuck 411, i.e., when the capacitor component 120 is displaced relative to the air groove 413, the capacitance value of the capacitor component 120 will change, thereby verifying the alignment between the substrate W and the electrostatic chuck 411 in the process. Specifically, the approximate deviation direction of the carrier disk 110 can be determined by the deviation value between different capacitor components 120, and the relative position of the carrier disk 110 and the electrostatic chuck 411 can be calculated based on the difference between the real-time capacitance value and the standard capacitance value.

[0091] Optionally, the air groove 413 includes multiple straight air grooves oriented towards the center, with each corresponding pair of electrodes of the capacitor assembly 120 parallel to the corresponding straight air groove. The straight air groove may include inner and outer layers, with each or two capacitor assemblies 120 corresponding to one straight air groove, to improve the measurement offset range.

[0092] Optionally, the air groove is a circumferential air groove, and a pair of electrodes of the multiple capacitor components 120 are parallel to the tangents of different parts of the circumference of the circumferential air groove. Each segment of the circumferential air groove can correspond to one capacitor component 120 or two capacitor components 120 to improve measurement accuracy.

[0093] Preferably, the air groove includes multiple straight air grooves and circumferential air grooves facing the center. A pair of electrodes of each capacitor component 120 are parallel to the corresponding straight air groove or parallel to the tangent of different parts of the circumference of the circumferential air groove. The circumferential offset of the carrier disk 110 is determined by the straight air grooves, and the radial offset of the carrier disk 110 is determined by the circumferential air grooves.

[0094] like Figure 9 As shown, the air groove 413 includes: a plurality of outer straight air grooves 414 facing the center, a circular air groove 415, and a plurality of inner straight air grooves 416 facing the center. The circular air groove 415 is disposed between the outer straight air grooves 414 and the inner straight air grooves 416. The plurality of capacitor components 120 on the bottom surface of the carrier disk 110 are disposed opposite to the outer straight air grooves 414 and / or the circular air grooves 415 and / or the inner straight air grooves 416.

[0095] In this embodiment, the air groove 413 includes twelve outer straight air grooves 414 facing the center, a circular air groove 415, and three inner straight air grooves 416 facing the center. The outer straight air grooves 414 and the inner straight air grooves 416 are uniformly and symmetrically arranged circumferentially, and the inner straight air grooves 416 and the outer straight air grooves 414 are not on the same straight line.

[0096] like Figure 10As shown, six capacitor components 120 are disposed at the bottom of the carrier disk 110. These components are evenly distributed circumferentially and are located at the bottom end of the outer linear air groove 414, partially overlapping with the outer linear air groove 414. Taking the rightmost capacitor component 120 as an example, it consists of a pair of electrodes. When the carrier disk 110 shifts towards the center, the proportion of the electrostatic clamp 411 between the two electrodes increases, and its dielectric constant changes accordingly. The shift direction and amount of the carrier disk 110 can be determined by the change in capacitance of each capacitor component 120 for subsequent adjustment. Similarly, three capacitor components 120 can be disposed on the bottom surface of the carrier disk 110 opposite to the circular air groove 415; and / or, three capacitor components 120 can be disposed on the bottom surface of the carrier disk 110 opposite to the inner linear air groove 416.

[0097] like Figure 11 As shown, in another embodiment, the bottom of the carrier disk 110 is provided with three uniformly arranged capacitor components 120. These capacitor components 120 are located at the intersection of the circular air groove 415 and the inner straight air groove 416. Each capacitor component 120 includes a first capacitor 121 and a second capacitor 122 that are perpendicular to each other. The first capacitor 121 and the second capacitor 122 have the same specifications. The first capacitor 121 is parallel to and corresponds to the inner straight air groove 416, and the second capacitor 122 is tangent to the circular air groove 415. When the carrier disk 110 shifts towards the center, the overlap range between the second capacitor 122 and the circular air groove 415 changes, and the second capacitor 122 may partially overlap with the inner straight air groove 416, resulting in a significant change in its capacitance value. Similarly, the capacitance value of the first capacitor 121 also changes. The alignment of the carrier disk 110 and the electrostatic clamp 411 is determined and adjusted based on the first capacitor 121 and the second capacitor 122.

[0098] In addition, other structures and the working methods of each component in this embodiment, such as the composition and specifications of the capacitor component 120, are the same as those in Embodiment 1, and will not be described again here.

[0099] Example 3

[0100] Based on the structural characteristics of the plasma processing system in Embodiments 1 and 2, this embodiment makes some changes to the structure of the reaction chamber 400 and the substrate position detection device, mainly to the electrostatic chuck 411 part of the reaction chamber 400 and the carrier disk 110 of the substrate position detection device.

[0101] In this embodiment, the electrostatic clamp 411 has several lifting pin holes 412 and air grooves 413. Multiple capacitor components 120 on the bottom surface of the carrier disk 110 are respectively arranged opposite to the lifting pin holes 412 and air grooves 413. The composition and arrangement of the capacitor components 120 can be configured according to actual needs. By using the lifting pin holes 412 and air grooves 413 to perform multi-directional verification of the position information of the carrier disk 110, the position determination and adjustment of the carrier disk 110 can be achieved more accurately.

[0102] In addition, the other structures and operating modes of each component in this embodiment, such as the composition and specifications of the capacitor component 120, are the same as those in Embodiment 1 and Embodiment 2, and will not be described again here.

[0103] In summary, the present invention provides a substrate position detection device, system and method thereof. The substrate position detection device combines a carrier disk 110, a capacitor assembly 120 and a computing unit, and realizes the detection and alignment of the substrate W and the electrostatic chuck 411 by means of normal process transfer, without the need to open the reaction chamber 400 to detect and adjust the alignment between the two, thus avoiding damage to the vacuum environment of the reaction chamber 400.

[0104] Furthermore, during the plasma processing system and etching process, the position or state of the electrostatic chuck 411 remains stable. The substrate position detection device uses the recess of the electrostatic chuck 411 to determine the positional relationship between the carrier disk 110 and the lower motor assembly, which helps to ensure the accuracy of the capacitor assembly 120 measurement and provides reliable data support for subsequent control.

[0105] Furthermore, the substrate position detection device utilizes the existing recess of the electrostatic chuck 411 to realize the alignment detection of the substrate W and the electrostatic chuck 411. The carrier disk 110 can be taken out as needed, without the need for additional processing of the components in the reaction chamber 400, and without the need to install additional components in the reaction chamber 400, which reduces the processing difficulty and saves the internal space of the reaction chamber 400.

[0106] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A substrate position detection device for positioning a substrate within a plasma processing reaction chamber, wherein the substrate can be placed on an electrostatic chuck via a conveying mechanism, the upper surface of the electrostatic chuck having a plurality of fixed-position recesses, characterized in that... Include: The carrier disk is placed on the upper surface of the electrostatic chuck in the reaction chamber via the conveying mechanism. The placement position of the carrier disk on the conveying mechanism corresponds to the placement position of the substrate on the conveying mechanism. Multiple capacitor components are disposed on the bottom surface of the carrier disk, and the capacitance value of each capacitor component depends on the relative position between the capacitor component and the recess; wherein, each capacitor component consists of a pair of electrodes, and the capacitance value of the capacitor component is the capacitance value between the pair of electrodes. The arithmetic unit calculates the relative position of the carrier disk and the upper surface of the electrostatic chuck by using the capacitance values ​​of the multiple capacitor components, so as to obtain the relative position of the substrate and the upper surface of the electrostatic chuck.

2. The substrate position detection device as described in claim 1, characterized in that, When the carrier disk is placed on the upper surface of the electrostatic chuck, at least two capacitor assemblies are located above the recess.

3. The substrate position detection device as described in claim 2, characterized in that, Multiple capacitor components are arranged above each of the recesses to expand the range in which the recesses can be detected by the capacitor components.

4. The substrate position detection device as described in claim 3, characterized in that, The electrodes of the capacitor assembly above each recess are arranged parallel to the electrodes of the adjacent capacitor assembly.

5. The substrate position detection device as described in claim 3, characterized in that, The electrodes of the capacitor assembly above each recess are arranged perpendicularly to the electrodes of the adjacent capacitor assembly.

6. The substrate position detection device as described in claim 2, characterized in that, The recessed portion consists of multiple lifting pin holes, which are evenly arranged along the circumference.

7. The substrate position detection device as described in claim 2, characterized in that, The recessed portion is an air groove, which is distributed at different positions on the surface of the electrostatic chuck, and multiple capacitor components are respectively arranged opposite to different positions of the air groove.

8. The substrate position detection device as described in claim 7, characterized in that, The gas groove includes multiple straight gas grooves facing the center, and each electrode of the capacitor assembly above the gas groove is arranged along the direction of the corresponding straight gas groove.

9. The substrate position detection device as described in claim 7, characterized in that, The gas groove includes an arc-shaped gas groove, and each electrode of the capacitor assembly above the gas groove is arranged along the tangential direction of the arc-shaped gas groove.

10. The substrate position detection device as described in claim 2, characterized in that, The length of the two electrodes is 0.5 to 5 times the distance between the two electrodes.

11. The substrate position detection device as described in claim 2, characterized in that, The electrode spacing between the two electrodes is the same as the size of the recess.

12. The substrate position detection device as described in claim 2, characterized in that, The electrodes are wrapped with insulating material.

13. The substrate position detection device as described in claim 1 or 2, characterized in that, The capacitor assembly can be either non-linear or linear.

14. The substrate position detection device as described in claim 1 or 2, characterized in that, The bottom of the carrier disk has several groove structures, and the capacitor assembly is disposed in the groove structures.

15. The substrate position detection device as described in claim 1, characterized in that, The computing unit is located inside the reaction chamber. The computing unit includes a processor, a memory, and a wireless communication device. The processor is used to calculate the relative position between the carrier disk and the upper surface of the electrostatic clamping disk based on the capacitance value of the capacitor assembly, and to obtain the relative position between the substrate and the upper surface of the electrostatic clamping disk. The memory is used to store the relative position information calculated by the processor and the capacitance value of the capacitor assembly. The wireless communication device is used to transmit the relative position information to the outside of the reaction chamber.

16. The substrate position detection device as described in claim 1, characterized in that, The computing unit includes a memory, a wireless communication device, and a processor. The memory and the wireless communication device are disposed inside the reaction chamber, and the processor is disposed outside the reaction chamber. The memory is used to store the capacitance value of the capacitor assembly and transmit it to the processor through the wireless communication device. The processor calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk based on the capacitance value of the capacitor assembly, and obtains the relative position of the substrate and the upper surface of the electrostatic clamping disk.

17. A plasma processing system, characterized in that, Include: The substrate position detection device as described in any one of claims 1 to 16; The reaction chamber has an electrostatic clamp at its bottom. A placement cavity, used to place a substrate or a substrate position detection device; A transmission cavity includes a transmission mechanism that transmits substrates or substrate position detection devices in each cavity. The transmission mechanism transmits the carrier disk to the electrostatic clamping disk in the reaction cavity. The computing unit calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk using the capacitance values ​​of multiple capacitor components.

18. A method for centering and adjusting positioning using a substrate position detection device as described in any one of claims 1 to 16, characterized in that, Include: Obtain the standard capacitance values ​​of each capacitor component when the carrier disk and the electrostatic clamp are coaxial; A conveying mechanism is used to transmit the substrate position detection device into the reaction chamber. The conveying path parameters of the carrier disk are the same as those of the substrate. The capacitor assembly corresponds to the recessed part of the fixed position on the upper surface of the electrostatic chuck. The arithmetic unit reads the capacitance value of each capacitor component and calculates the relative position of the carrier disk and the upper surface of the electrostatic clamping disk in combination with the standard capacitance value. Adjust the placement of the carrier disk on the electrostatic clamp based on the relative position information and measure again until the difference between the capacitance value of the capacitor assembly and the standard capacitance value is within the set range.

19. The method for centering and adjusting positioning using a substrate position detection device as described in claim 18, characterized in that, The change in the placement of the carrier disk specifically refers to changing the position of the carrier disk on the conveying mechanism.

20. The method for centering and adjusting positioning using a substrate position detection device as described in claim 18, characterized in that, The change in the placement of the carrier disk specifically refers to changing the operating trajectory of the conveying mechanism.

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