Ultrafast tunable spatial phase modulator for 6g communications and method of manufacture

Abstract

The application is suitable for the field of modulation devices, and provides an ultrafast tunable spatial phase modulator for 6G communication and a manufacturing method. The tunable spatial phase modulator is used for receiving terahertz waves and a terahertz wave modulation device. The terahertz wave modulation device comprises a field source capable of generating an acting field acting on the tunable spatial phase modulator. The tunable spatial phase modulator comprises a seat body and a modulation part arranged on the seat body. The modulation part comprises a subwavelength structure and a modulation layer. The subwavelength structure is arranged on the seat body in a spiral pattern along a direction from close to far from the seat body. The highest height of the subwavelength structure is equal to the central wavelength of the terahertz wave. The modulation layer is arranged on the surface of the subwavelength structure far from the seat body. The modulation layer is used for receiving the terahertz wave and the acting field to modulate the phase of the terahertz wave. By adopting the subwavelength structure, the terahertz wave can be modulated in a wider range of wave bands.

Description

Technical Field

[0001] This application belongs to the field of modulation device technology, and more specifically, relates to an ultrafast tunable spatial phase modulator for 6G communication and its manufacturing method. Background Technology

[0002] Terahertz waves are electromagnetic waves with frequencies ranging from 0.1 THz to 0.3 THz and wavelengths ranging from approximately 0.03 to 3 mm, falling between microwaves and infrared.

[0003] In the field of terahertz wave technology, terahertz wave modulation devices are the core components for applying terahertz waves, enabling the control of the amplitude, phase, and polarization of terahertz waves. However, existing terahertz modulators can only modulate terahertz waves within a certain frequency band and cannot modulate terahertz waves across a wider frequency band. Summary of the Invention

[0004] The purpose of this application is to provide an ultrafast tunable spatial phase modulator and manufacturing method for 6G communication, aiming to solve the technical problem that terahertz waves cannot achieve a wider range of modulation in the prior art.

[0005] To achieve the above objectives, according to one aspect of this application, an ultrafast tunable spatial phase modulator for 6G communication is provided. The tunable spatial phase modulator is used to receive terahertz waves and is used in a terahertz wave modulation device. The terahertz wave modulation device includes a field source capable of generating an action field acting on the tunable spatial phase modulator. The tunable spatial phase modulator includes a base and a modulation section disposed on the base. The refractive index of the base is different from the refractive index of light. The modulation section includes a subwavelength structure and a modulation layer. The subwavelength structure is spirally arranged on the base along a direction from near to far from the base. The linear distance between the surface of the subwavelength structure away from the base and the surface of the base near the subwavelength structure is equal to the center wavelength of the terahertz wave. The modulation layer is disposed on the surface of the subwavelength structure away from the base. The modulation layer is used to receive the terahertz wave and the action field to modulate the phase of the terahertz wave.

[0006] Optionally, the subwavelength structural component includes multiple structures arranged in a spiral pattern on the base, wherein the height of one of two adjacent structures is less than the height of the other structure.

[0007] Optionally, there are 4N structures, where N is a positive integer greater than or equal to 1. The height of each structure gradually increases along the first direction, and the structure with the lowest height among the 4N structures is placed adjacent to the structure with the highest height.

[0008] Optionally, the height difference between two adjacent structures in the 4N structures is 6% to 25% of the height of the tallest structure in the 4N structures.

[0009] Optionally, multiple structures are strips vertically mounted on the base.

[0010] Optionally, the field of action is an optical field, and the modulation layer is made of Weyl semimetal; or, the field of action is a magnetic field, and the modulation layer is made of magnetron material.

[0011] Optionally, the tunable spatial phase modulator further includes an electrode layer disposed between the subwavelength structure and the modulation layer. The electrode layer is disposed on the surface of the subwavelength structure away from the base, and the modulation layer is disposed on the surface of the electrode layer away from the subwavelength structure. The electrode layer is used to electrically connect to an external power source to form an electric field for modulating the phase of the terahertz wave, and the electric field forms the action field.

[0012] Optionally, multiple modulation sections are provided, and the multiple modulation sections are spaced apart on the base body. At least some of the multiple modulation sections are used to receive the action field.

[0013] According to another aspect of this application, a method for manufacturing a tunable spatial phase modulator is provided. This method is used to manufacture the aforementioned tunable spatial phase modulator, and the manufacturing method includes:

[0014] Subwavelength structural components are fabricated on the base using 3D printing technology;

[0015] A modulation layer is deposited on the surface of the subwavelength structure away from the base.

[0016] Alternatively, a modulation layer may be deposited on the surface of the subwavelength structure away from the base by magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation, or molecular beam epitaxy.

[0017] The beneficial effects of the ultrafast tunable spatial phase modulator for 6G communication provided in this application are as follows: Compared with the prior art, when modulating the phase of terahertz waves, the tunable spatial phase modulator is generally placed vertically. In this case, the modulation layer is set vertically, and the terahertz wave is incident on the modulation layer in a horizontal direction. The interaction field is incident on the modulation layer in an inclined direction at a preset angle with the horizontal direction. Adjusting the intensity of the interaction field changes the chemical potential of the modulation layer, thereby changing the phase of the terahertz wave incident on the modulation layer. The subwavelength structure has a spiral stepped shape, and its characteristic size is smaller than the operating wavelength. At the same time, its reflectivity, transmittance, polarization characteristics, and spectral characteristics are different from those of conventional diffractive optical elements. By using the subwavelength structure, a wider range of terahertz waves can be modulated. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic diagram of the structure of a tunable spatial phase modulator provided in an embodiment of this application;

[0020] Figure 2 This is a schematic diagram of a subwavelength structure with four structural elements, provided in an embodiment of this application.

[0021] Figure 3 This is a schematic diagram of a subwavelength structure with twelve structural elements, provided in an embodiment of this application.

[0022] Figure 4 A schematic flowchart illustrating the manufacturing method of a tunable spatial phase modulator provided in an embodiment of this application;

[0023] Figure 5 A schematic diagram illustrating the application of the terahertz wave modulation device provided in the embodiments of this application.

[0024] The details of the reference numerals used in the above figures are as follows:

[0025] 100, Base; 200, Subwavelength structural component; 210, Structure; 300, Field source; 400, Femtosecond laser; 500, Terahertz wave generator; 600, Terahertz wave detector; 700, Information analysis component. Detailed Implementation

[0026] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0027] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly or indirectly on that other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to that other element. Unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0028] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0029] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0030] As described in the background section, terahertz waves currently refer to electromagnetic waves with frequencies ranging from 0.1 THz to 0.3 THz and wavelengths ranging from approximately 0.03 to 3 mm, falling between microwaves and infrared. In the field of terahertz wave technology, terahertz wave modulation devices are the core components for applying terahertz waves, enabling the modulation of their amplitude, phase, and polarization. However, existing terahertz modulators can only modulate terahertz waves within a specific frequency band and cannot modulate terahertz waves across a wider frequency range.

[0031] Reference Figures 1 to 3 as well as Figure 5 To address the aforementioned problems, according to one aspect of this application, embodiments of this application provide an ultrafast tunable spatial phase modulator for 6G communication. The tunable spatial phase modulator is used to receive terahertz waves and is used in a terahertz wave modulation device. The terahertz wave modulation device includes a field source 300, which can generate an action field acting on the tunable spatial phase modulator. The tunable spatial phase modulator includes a base 100 and a modulation section disposed on the base 100. The refractive index of the base 100 is the same as the refractive index of light. Unlike other components, the modulation section includes a subwavelength structure 200 and a modulation layer. The subwavelength structure 200 is spirally arranged on the base 100 along a direction from near to far from the base 100. The straight-line distance between the surface of the subwavelength structure 200 away from the base 100 and the surface of the base 100 near the subwavelength structure 200 is equal to the center wavelength of the terahertz wave. The modulation layer is disposed on the surface of the subwavelength structure 200 away from the base 100. The modulation layer is used to receive the terahertz wave and the action field to modulate the phase of the terahertz wave.

[0032] In this embodiment, a terahertz wave is incident horizontally onto the modulation layer, and the field of action is incident on the modulation layer at a predetermined angle to the horizontal direction. The field source 300 is a laser generator capable of generating an optical field, and the field of action is an optical field. The power density of the laser generator is adjustable from 0 to 1 W / cm². The modulation layer is made of Weyl semimetal, which has a band gap close to 0 and advantages such as high carrier mobility and high conductivity. It also exhibits the characteristics of the anomalous Hall effect. In this case, the tunable spatial phase modulator of this application has the advantages of low power consumption and high bandwidth. In another embodiment, the field source 300 can also be a magnetic object capable of generating a magnetic field, and the field of action is a magnetic field. The magnetic field is adjustable from 0.1 to 1 nT, and the modulation layer is made of a magnetic material, such as a magnet or iron oxide. In yet another embodiment, the field source 300 can also be a power source capable of generating an electric field, and the field of action is an electric field. The modulation layer is made of Weyl semimetal.

[0033] In practical applications, when modulating the phase of a terahertz wave, the tunable spatial phase modulator is typically placed vertically. With the modulation layer vertically positioned, the terahertz wave is incident on the modulation layer horizontally, while the interaction field is incident on the modulation layer at a predetermined angle to the horizontal. Adjusting the intensity of the interaction field changes the chemical potential of the modulation layer, thereby altering the phase of the terahertz wave incident on the modulation layer. Furthermore, in this embodiment, the modulation layer is deposited on the surface of the subwavelength structure 200 away from the base 100 using magnetron sputtering. In other embodiments, the modulation layer can also be deposited on the surface of the subwavelength structure 200 away from the base 100 using chemical vapor deposition, physical vapor deposition, vacuum evaporation, or molecular beam epitaxy.

[0034] Furthermore, the base 100 supports the modulation unit, preventing deformation. The base 100 is made of high-temperature resistant photosensitive resin, giving it advantages such as high strength, high temperature resistance, water resistance, easy curing, short preparation process, and convenient storage. It also makes the refractive index of the base 100 different from that of light. The subwavelength structure 200 is spiral-stepped, with a height difference between every two adjacent steps. Due to the difference between the refractive index of the base 100 and that of light, and the height difference in the subwavelength structure 200, it provides additional propagation phase before the terahertz wave reaches the modulation layer surface, thereby increasing the modulation range of the terahertz wave. This allows the tunable spatial phase modulator in this application to modulate terahertz waves across a wider wavelength range. In this embodiment, the center wavelength of the terahertz wave is 500 μm, and the straight-line distance between the surface of the subwavelength structure 200 away from the base 100 and the surface of the base 100 near the subwavelength structure is equal to 500 μm.

[0035] Reference Figure 2 and Figure 3 In this embodiment, the subwavelength structure 200 includes multiple structures 210, which are spirally arranged on the base 100. The height of one of the two adjacent structures 210 is less than the height of the other structure 210.

[0036] In this embodiment, multiple structures 210 are arranged sequentially to form a spiral staircase shape. These structures 210 are fixedly connected to the base 100 using surface projection stereolithography 3D printing technology. This technology facilitates the fabrication of subwavelength structural components 200 and saves costs. The design where the height of one of two adjacent structures 210 is less than the height of the other expands the modulation range of the terahertz wave phase.

[0037] Reference Figure 2 and Figure 3 In this embodiment, there are 4N structures 210, where N is a positive integer greater than or equal to 1. The height of each structure 210 gradually increases along the first direction. Among the 4N structures 210, the structure 210 with the lowest height is arranged adjacent to the structure 210 with the highest height.

[0038] In one embodiment, N is 1, and four structures 210 are arranged sequentially in a clockwise direction with gradually increasing height. In this case, the first direction is clockwise. However, in other embodiments, the four structures 210 with gradually increasing height can also be arranged sequentially in a counter-clockwise direction. The height difference between any two adjacent structures 210 is 110 μm to facilitate manufacturing. Alternatively, in other embodiments, the height difference between any two adjacent structures 210 can be different to broaden the modulation range of the tunable spatial phase modulator in this application.

[0039] In another embodiment, N is 2, and there are 8 structures 210 arranged sequentially in a clockwise direction with gradually increasing height. In this case, the first direction is clockwise. Of course, in other embodiments, the 8 structures 210 with gradually increasing height can also be arranged sequentially in a counter-clockwise direction. The height difference between any two adjacent structures 210 is 75 μm to facilitate manufacturing. Of course, in other embodiments, the height difference between any two adjacent structures 210 can be different to broaden the modulation range of the tunable spatial phase modulator in this application.

[0040] In another embodiment, N is 3, and there are 12 structures 210 arranged sequentially in a clockwise direction with gradually increasing height. In this case, the first direction is clockwise. Of course, in other embodiments, the 12 structures 210 with gradually increasing height can also be arranged sequentially in a counter-clockwise direction. The height difference between any two adjacent structures 210 is 31 μm to facilitate manufacturing. Of course, in other embodiments, the height difference between any two adjacent structures 210 can be different to broaden the modulation range of the tunable spatial phase modulator in this application.

[0041] Of course, in other embodiments, the number of structures 210 can also be set to 16, 20, etc. As the number of structures 210 increases, the height difference between two adjacent structures 210 will gradually decrease. At this time, the phase difference of the terahertz wave modulated by the tunable spatial phase modulator in this application will be smaller, and the modulation effect will be more uniform.

[0042] Reference Figure 2 and Figure 3 In this embodiment, the height difference between two adjacent structures 210 in the 4N structures 210 accounts for 6% to 25% of the height of the tallest structure 210 in the 4N structures 210. The above design, while ensuring that the subwavelength structure 200 can be manufactured using existing 3D printing technology, minimizes the phase difference of the modulated terahertz wave to a small extent, thereby making the modulation effect relatively uniform.

[0043] Reference Figure 2 and Figure 3 As an optional embodiment of this application, the multiple structures 210 are all vertically arranged strips on the base 100. In this optional embodiment, the structure 210 is a cuboid with a square cross-section, the dimensions of which are 100um*100um. This design facilitates the manufacture of helically distributed subwavelength structures 210 using existing 3D printing technology, saving manufacturing costs while ensuring terahertz wave phase modulation. Of course, in other embodiments, the structure 210 can also be cylindrical, hexagonal, or other strip-shaped.

[0044] Reference Figure 2 and Figure 3As an optional embodiment of this application, the tunable spatial phase modulator further includes an electrode layer, which is disposed between the subwavelength structure 200 and the modulation layer. The electrode layer is disposed on the surface of the subwavelength structure 200 away from the base 100, and the modulation layer is disposed on the surface of the electrode layer away from the subwavelength structure 200. The electrode layer is used to electrically connect to an external power source to form an electric field for modulating the phase of the terahertz wave, and the electric field forms an action field.

[0045] In this alternative embodiment, the electrode layer is deposited on the surface of the subwavelength structure 200 away from the base 100, and the modulation layer is deposited on the surface of the electrode layer away from the subwavelength structure 200. The electrode layer is made of ITO (indium tin oxide), although in other embodiments, it can also be made of gold. The electrode layer facilitates phase modulation of terahertz waves in the presence of an electric field, thus expanding the applicability of the tunable spatial phase modulator of this application.

[0046] Reference Figure 1 As an optional embodiment of this application, multiple modulation units are provided, and the multiple modulation units are spaced apart on the base 100. At least some of the multiple modulation units are used to receive the action field.

[0047] In this optional configuration, a total of 900 modulation units are provided, arranged at 30*30 intervals on the base 100. The final shape formed by the 900 modulation units has a square cross-section with dimensions of 1.05cm*1.05cm. Each modulation unit's subwavelength structure 200 has a cross-section of 100um*100um, and the linear distance between any two adjacent subwavelength structures 200 is 150um. The multiple modulation units facilitate the reception of a complete action field and also simplify manufacturing, improving processing efficiency and reducing manufacturing costs. A single modulation unit can modulate the phase of the terahertz wave within its region, and the shape formed by multiple modulation units is determined according to the desired back wavefront of the terahertz wave. Furthermore, the arrangement of each modulation unit within the multiple modulation units is also determined according to the desired back wavefront of the terahertz wave.

[0048] Reference Figures 1 to 4 According to another aspect of this application, embodiments of this application provide a method for manufacturing a tunable spatial phase modulator. This method is used to manufacture the aforementioned tunable spatial phase modulator, and the manufacturing method includes:

[0049] S101. Subwavelength structural components 200 are fabricated on the base 100 using 3D printing technology; specifically, multiple subwavelength structural components 200 are provided, and multiple subwavelength structural components 200 are processed and manufactured on the base 100 using surface projection stereolithography 3D printing technology.

[0050] S103. Deposit a modulation layer on the surface of the subwavelength structure 200 away from the base 100; specifically, deposit the modulation layer on the surface of the subwavelength structure 200 away from the base 100 by using magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation or molecular beam epitaxy.

[0051] As an optional embodiment of this application, an electrode layer is deposited on the surface of the subwavelength structure 200 away from the base 100, and a modulation layer is deposited on the surface of the electrode layer away from the subwavelength structure 200. Specifically, an electrode layer is deposited on the surface of the subwavelength structure 200 away from the base 100 using magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation, or molecular beam epitaxy, and then a modulation layer is deposited on the surface of the electrode layer away from the subwavelength structure 200 using magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation, or molecular beam epitaxy.

[0052] Reference Figure 5 According to another aspect of this application, an embodiment of this application provides a terahertz wave modulation device, which includes a field source 300 and the aforementioned tunable spatial phase modulator. The tunable spatial phase modulator is used to receive terahertz waves. The field source 300 is disposed on one side of the tunable spatial phase modulator and is capable of generating an action field that acts on the tunable spatial phase modulator and modulates the phase of the terahertz wave together with the tunable spatial phase modulator.

[0053] In this embodiment, the tunable spatial phase modulator is vertically positioned to generate a terahertz wave positioned horizontally. A field source 300 is positioned on one side of the tunable spatial phase modulator and is capable of generating an action field positioned at a preset angle to the horizontal direction. The action field and the terahertz wave are simultaneously incident on the surface of the tunable spatial phase modulator. A terahertz wave generator 500 and a femtosecond laser 400 are also sequentially positioned on one side of the terahertz wave modulation device. The femtosecond laser 400 is a femtosecond laser with a wavelength of 780 mm. The terahertz wave generator 500 is used to generate the terahertz wave. A beam splitter is also positioned between the femtosecond laser 400 and the terahertz wave generator 500. After the femtosecond laser 400 is split by the beam splitter, it generates two beams. One beam passes through a delay device and enters the terahertz wave generator 500, thereby generating a terahertz wave. The terahertz wave is incident horizontally on the surface of the tunable spatial phase modulator. A terahertz wave detector 600 and an information analyzer 700 are sequentially arranged on the side of the tunable spatial phase modulator away from the terahertz wave generator 500. The terahertz wave detector 600 is electrically connected to the base 100 in the tunable spatial phase modulator and also electrically connected to the information analyzer 700. Another beam of light split by the beam splitter coherently interacts with the terahertz wave at the terahertz wave detector 600, thereby obtaining the time-domain spectrum of the terahertz wave. The information analyzer 700 analyzes the reflection spectrum of the terahertz wave after being modulated by the tunable spatial phase modulator and the interaction field, and determines the phase of the modulated terahertz wave. The femtosecond laser 400, terahertz wave generator 500, terahertz wave detector 600, and information analyzer 700 mentioned in the embodiments of this application are all common knowledge to those skilled in the art, and their specific structures and models will not be described in detail here.

[0054] In summary, implementing the ultrafast tunable spatial phase modulator and manufacturing method for 6G communication provided in this embodiment has at least the following beneficial technical effects:

[0055] 1. By employing a subwavelength structural component 200, it is possible to modulate a wider range of terahertz waves;

[0056] 2. By using surface projection stereolithography 3D printing technology to manufacture subwavelength structural parts 200, processing efficiency was improved and manufacturing costs were saved.

[0057] 3. The modulation layer and electrode layer are prepared by magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation or molecular beam epitaxy, which is relatively simple and improves the preparation efficiency.

[0058] 4. The tunable spatial phase modulator in this application can be used to modulate the phase of terahertz waves in optical, magnetic or electric fields, thus broadening the applicability of the tunable spatial phase modulator in this application.

[0059] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An ultrafast tunable spatial phase modulator for 6G communication, characterized in that, The tunable spatial phase modulator is used to receive terahertz waves and is used in a terahertz wave modulation device, the terahertz wave modulation device including a field source (300), the field source (300) being able to generate an action field acting on the tunable spatial phase modulator; The tunable spatial phase modulator includes a base (100) and a modulation section disposed on the base (100). The refractive index of the base (100) is different from that of light. The modulation section includes a subwavelength structure (200) and a modulation layer. The subwavelength structure (200) includes a plurality of structures (210). The plurality of structures (210) are arranged in a spiral coil on the base (100). The height of one of two adjacent structures (210) is less than the height of the other structure (210). The straight-line distance between the surface of the subwavelength structure (200) away from the base (100) and the surface of the base (100) close to the subwavelength structure (200) is equal to the center wavelength of the terahertz wave. The modulation layer is disposed on the surface of the subwavelength structure (200) away from the base (100). The modulation layer is used to receive the terahertz wave and the action field to modulate the phase of the terahertz wave.

2. The ultrafast tunable spatial phase modulator for 6G communication according to claim 1, characterized in that, There are 4N structures (210), where N is a positive integer greater than or equal to 1. The height of each structure (210) gradually increases along the first direction. The structure (210) with the lowest height among the 4N structures (210) is arranged adjacent to the structure (210) with the highest height.

3. The ultrafast tunable spatial phase modulator for 6G communication according to claim 2, characterized in that, The height difference between two adjacent structures (210) in the 4N structures (210) is 6% to 25% of the height of the tallest structure (210) in the 4N structures (210).

4. The ultrafast tunable spatial phase modulator for 6G communication according to claim 1, characterized in that, Each of the structures (210) is a strip-shaped body vertically arranged on the base (100).

5. The ultrafast tunable spatial phase modulator for 6G communication according to claim 1, characterized in that, The field of action is an optical field, and the modulation layer is made of a Weyl semimetal; or, The field of action is a magnetic field, and the modulation layer is made of a magnetron material.

6. The ultrafast tunable spatial phase modulator for 6G communication according to claim 1, characterized in that, The tunable spatial phase modulator further includes an electrode layer disposed between the subwavelength structure (200) and the modulation layer. The electrode layer is disposed on the surface of the subwavelength structure (200) away from the base (100), and the modulation layer is disposed on the surface of the electrode layer away from the subwavelength structure (200). The electrode layer is used to electrically connect to an external power source to form an electric field for modulating the phase of the terahertz wave, and the electric field forms an action field.

7. The ultrafast tunable spatial phase modulator for 6G communication according to claim 1, characterized in that, The modulation section is provided in multiple ways, and the multiple modulation sections are spaced apart on the base (100). At least some of the multiple modulation sections are used to receive the applied field.

8. A method for manufacturing a tunable spatial phase modulator, characterized in that, The method for manufacturing the tunable spatial phase modulator is used to manufacture the tunable spatial phase modulator according to any one of claims 1 to 7, the method comprising: The subwavelength structural component (200) is fabricated on the base (100) using 3D printing technology. The modulation layer is deposited on the surface of the subwavelength structure (200) away from the base (100).

9. The method for manufacturing a tunable spatial phase modulator according to claim 8, characterized in that, The modulation layer is deposited on the surface of the subwavelength structure (200) away from the base (100) by magnetron sputtering, chemical vapor deposition, physical vapor deposition, vacuum evaporation or molecular beam epitaxy.

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