An integrated Micro-LED display device and the display panel it comprises

Abstract

This application proposes an integrated Micro-LED display device and a display panel thereof, comprising: a substrate and multiple display pixel units bonded to the substrate. Each display pixel unit includes a driver chip and several Micro-LED chips that are discretely separated from each other. A first metal wiring and a second metal wiring for connecting the display pixel units are respectively disposed on a first surface and a second metal wiring. A portion of the first metal wiring and a portion of the second metal wiring are connected through several conductive vias formed on the substrate. The first metal wiring and / or the second metal wiring include a positive bus and a negative bus. The driver chip and at least one bus are respectively disposed on different surfaces of the substrate. The discrete driver chip and Micro-LED chips are bonded together to a circuit substrate via mass transfer to form a display pixel array, achieving high-current driving of the Micro-LED chips and simultaneously realizing one-to-many integrated driving of the driver chip and Micro-LED chips.

Description

Technical Field

[0001] This application relates to the field of LED display technology, specifically to an integrated Micro-LED display device and a display panel composed of it. Background Technology

[0002] Micro-LED displays are a highly competitive next-generation display technology. Full-color display is an essential feature of display products. Liquid crystal displays use color filters corresponding to each pixel to convert the white light emitted from the backlight into monochromatic light of the three primary colors (red, green, and blue), achieving full-color display. OLED displays use RGB light-emitting materials for each pixel, thus achieving self-emissive full-color display. Regardless of which full-color display technology is used, it requires individually addressable driving of the arrayed Micro-LED chips.

[0003] Each chip in a Micro-LED chip array is electrically connected to a corresponding addressable driving unit on the driving substrate to ensure that each Micro-LED chip in each pixel unit can be driven independently. Existing driving substrates mainly include printed circuit boards (PCBs), thin-film transistor (TFT) substrates, and complementary metal-oxide-semiconductor (CMOS) substrates. CMOS substrates offer the highest achievable resolution, but their small size and high cost limit their application to small-sized micro-LED displays such as AR displays. PCB substrates offer advantages such as flexible design and double-sided wiring, but existing PCB substrates struggle to integrate addressing circuits and have relatively large pixel pitches, primarily limiting their application to lower-resolution Micro-LED displays. The TFT substrate has its own addressing circuit unit and usually adopts a 2T1C architecture driving circuit, which can enable each pixel unit's Micro-LED chip to achieve independent addressing active driving. The disadvantages are: (1) The TFT in the 2T1C array has the problem of uneven IV characteristics. In order to achieve Vth compensation, 4T2C or even 6T2C is usually required, and the driving becomes more complicated; Chinese patents with application numbers 202111102022.5, 202111093965.6, 202110534241.4, 202110357172.4, etc., use discrete transistors to integrate with Micro-LED chips to form a display pixel array. The discrete transistors can perform Vth sorting, thereby avoiding this problem; (2) Only single-sided wiring is possible. The wide line width and high resolution are contradictory. The cross-section of the wiring is limited, the current supplied to the Micro-LED chip is limited, and the brightness of the Micro-LED display is limited. Summary of the Invention

[0004] In order to overcome the above-mentioned defects in the prior art, this application proposes an integrated Micro-LED display device and a display device composed thereof, which can realize high-current driving of Micro-LED chips and realize one-to-many integrated driving of driving chips and Micro-LED chips.

[0005] According to a first aspect of this application, an integrated Micro-LED display device is proposed, comprising: a substrate and a plurality of display pixel units bonded to the substrate, each display pixel unit including a driver chip and a plurality of Micro-LED chips that are discrete from each other, a first metal wiring for connecting the display pixel units being provided on a first surface of the substrate, a second metal wiring for connecting the display pixel units being provided on a second surface of the substrate, and a portion of the first metal wiring and a portion of the second metal wiring being connected through a plurality of conductive vias formed on the substrate, the first metal wiring and / or the second metal wiring including a positive bus and a negative bus, the driver chip and the plurality of Micro-LED chips being flip-chip chips and electrically connected between the positive bus and the negative bus, and the driver chip and at least one bus being respectively disposed on different surfaces of the substrate.

[0006] The display device disclosed in the above scheme can bond discrete driver chips and Micro-LED chips together onto a circuit board through mass transfer to form a display pixel array, realize high-current driving of Micro-LED chips, and realize one-to-many integrated driving of driver chips and Micro-LED chips.

[0007] Furthermore, the first metal wiring includes a GND lead, a VCC lead, and several first LED leads corresponding to several Micro-LED chips. The GND lead is connected to the negative bus, and the VCC lead is connected to the positive bus. The driver chip is provided with a VCC pin, a GND pin, and several LED pins corresponding to several Micro-LED chips. The VCC pin is electrically connected to the VCC lead, and the GND pin is electrically connected to the GND lead. Each of the several Micro-LED chips is provided with a positive pin and a negative pin. The several positive pins are electrically connected to the VCC lead, and the several negative pins are electrically connected to the corresponding several first LED leads. The several LED pins are respectively electrically connected to the corresponding several first LED leads, so that the current flowing through the several Micro-LED chips in the display pixel unit flows through the driver chip in the display pixel unit.

[0008] Furthermore, the driver chip is disposed on the first surface of the substrate, and the positive bus and negative bus are both disposed on the second surface of the substrate.

[0009] Furthermore, several Micro-LED chips are disposed on the first surface of the substrate. At this point, the power supply circuit and the devices are located on opposite sides of the substrate, spatially separated, allowing the power supply current circuit to have wider wiring to carry a larger current, thereby increasing the power supply current.

[0010] Furthermore, several Micro-LED chips and driver chips are located directly above the positive and negative bus, respectively. This design facilitates heat dissipation; through the vertical heat transfer of the substrate, the heat generated by the chips can be conducted to the metal lines of the positive and negative bus, and then the high thermal conductivity of the metal lines themselves can be used to transfer heat outward.

[0011] Furthermore, several Micro-LED chips belonging to the same display pixel unit are arranged in a row with their arrangement direction parallel to one side of the driving chip belonging to that display pixel unit. At this time, the driving chip blocks the lateral light propagation between two adjacent display pixel units in the same row, thereby reducing lateral light crosstalk between the Micro-LED chips of adjacent display pixel units.

[0012] Furthermore, the negative bus is arranged on the first surface of the substrate, and the positive bus is arranged on the second surface of the substrate.

[0013] Furthermore, the driving chip and several Micro-LED chips belonging to the same display pixel unit are respectively disposed on different surfaces of the same area of ​​the substrate.

[0014] Furthermore, the driver chip and the positive bus for connecting the driver chip are disposed on the same surface of the substrate and stacked in a direction perpendicular to the substrate.

[0015] Furthermore, the negative bus for connecting the driver chip is disposed on another surface of the substrate and stacked with the driver chip in a direction perpendicular to the substrate. By stacking the negative bus and the driver chip in vertical space, a reduction in the size of the display pixel unit in horizontal space can be achieved.

[0016] Furthermore, the extension directions of the negative bus and the positive bus are perpendicular to each other. Thus, the Micro-LED chip and metal wiring can be vertically stacked on the top and bottom sides of the substrate, thereby reducing the wiring area occupied by the display pixel unit, reducing the pixel size, increasing pixel resolution, and simultaneously increasing the proportion of the light-transmitting area in the transparent display to improve light transmittance.

[0017] Furthermore, the driving chip and several Micro-LED chips belonging to the same display pixel unit are stacked in a direction perpendicular to the substrate.

[0018] Furthermore, the Micro-LED chip is a combination of three primary color Micro-LED chips, including blue, green and red Micro-LED chips, or a combination of a blue Micro-LED chip, a blue Micro-LED chip coated with red fluorescent material and a blue Micro-LED chip coated with green fluorescent material.

[0019] Furthermore, some or all of the Micro-LED chips belonging to the same display pixel unit are fixed on the same carrier substrate to form a multi-in-one Micro-LED chip, and are bonded to the substrate through the same carrier substrate. Bonding multiple Micro-LED chips at once can achieve high-efficiency manufacturing.

[0020] Furthermore, the all-in-one Micro-LED chip incorporates island-shaped light-emitting structures, which are either cylindrical or annular. Different wavelengths of light emission are achieved through nanopillars or nanorings of varying diameters.

[0021] Furthermore, each display pixel unit has four Micro-LED chips.

[0022] Furthermore, two of the four Micro-LED chips emit red light, while the other two emit blue and green light, respectively.

[0023] Furthermore, the four Micro-LED chips emit red, blue, green, and white light, respectively.

[0024] Furthermore, several Micro-LED chips are packaged into MiP (Micro-LED in Package) packages. During manufacturing, the photoelectric parameters of the MiP packages can be measured and graded to ensure high consistency of photoelectric parameters among the pixel units within the display screen, thereby ensuring a high-quality display effect.

[0025] Furthermore, an optical adhesive layer is applied above and / or below the MiP package, display pixel unit, and / or substrate for sealing and protection. The optical adhesive layer provides necessary protection for the device and circuitry, preventing damage during the manufacturing process.

[0026] Furthermore, a light-shielding adhesive layer is used to cover the surface of the driver chip for light-shielding treatment.

[0027] Furthermore, the substrate is transparent. This allows light to pass through the non-wiring areas within the display device, enabling high-resolution transparent displays.

[0028] Furthermore, taking the plane where the Micro-LEDs are set as the front side, several Micro-LEDs are symmetrically set on the back side to achieve double-sided display.

[0029] Furthermore, the same driver chip is used to drive the Micro-LEDs on both sides. Sharing the same driver IC enables synchronous high-resolution display of the images on both sides of the screen.

[0030] Furthermore, multiple display pixel units are arranged in an array, and the driver chips of the display pixel units in the same row are connected in series to form an electrical connection.

[0031] Secondly, this application proposes a display panel including any of the integrated Micro-LED display devices as described in the first aspect.

[0032] This application proposes an integrated Micro-LED display device and a display panel composed of the same. This Micro-LED display device integrates discrete driver chips and Micro-LED chips, complementing the advantages of PCB substrates and TFT substrates. During manufacturing, the driver chip and Micro-LED chip can be bonded together to the circuit board via mass transfer to form a pixel array. This achieves both discrete integration and high power supply current, resulting in a high-performance Micro-LED display effect. Attached Figure Description

[0033] The accompanying drawings illustrate embodiments and, together with the description, serve to explain the principles of this application. Elements in the drawings are not necessarily to scale. The same reference numerals refer to corresponding similar parts.

[0034] Figure 1 This is a schematic diagram of the integrated Micro-LED display device according to the first embodiment of the present invention;

[0035] Figure 2 This is a partial schematic diagram of the first surface of the integrated Micro-LED display device in the first embodiment of the present invention;

[0036] Figure 3 This is a schematic diagram of the circuit and soldering pins of the integrated Micro-LED display device in the first embodiment of the present invention;

[0037] Figure 4 This is a partial schematic diagram of the second surface of the integrated Micro-LED display device in the first embodiment of the present invention;

[0038] Figure 5 This is a longitudinal cross-sectional view of the integrated Micro-LED display device in the first embodiment of the present invention;

[0039] Figure 6 This is a partial schematic diagram of the first surface of the integrated Micro-LED display device in the second embodiment of the present invention;

[0040] Figure 7 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the second embodiment of the present invention;

[0041] Figure 8This is a schematic diagram of the integrated Micro-LED display device according to the third embodiment of the present invention;

[0042] Figure 9 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the third embodiment of the present invention;

[0043] Figure 10 This is a schematic diagram of the integrated Micro-LED display device according to the fifth embodiment of the present invention;

[0044] Figure 11 This is a schematic diagram of the integrated Micro-LED display device according to the sixth embodiment of the present invention;

[0045] Figure 12 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the sixth embodiment of the present invention;

[0046] Figure 13 This is a schematic diagram of the integrated Micro-LED display device according to the seventh embodiment of the present invention;

[0047] Figure 14 This is a schematic diagram of the structure of the all-in-one Micro-LED chip in the seventh embodiment of the present invention;

[0048] Figure 15 This is a schematic diagram of the structure of the all-in-one Micro-LED chip in the eighth embodiment of the present invention;

[0049] Figure 16 This is a schematic diagram of the structure of the all-in-one Micro-LED chip in the ninth embodiment of the present invention;

[0050] Figure 17 This is a schematic diagram of the integrated Micro-LED display device according to the tenth embodiment of the present invention;

[0051] Figure 18 This is a schematic diagram of the integrated Micro-LED display device according to the eleventh embodiment of the present invention;

[0052] Figure 19 This is a schematic diagram of the integrated Micro-LED display device according to the twelfth embodiment of the present invention;

[0053] Figure 20 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the thirteenth embodiment of the present invention;

[0054] Figure 21 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the fourteenth embodiment of the present invention;

[0055] Figure 22 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the fifteenth embodiment of the present invention;

[0056] Figure 23 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the sixteenth embodiment of the present invention;

[0057] Figure 24 This is a longitudinal cross-sectional view of the integrated Micro-LED display device according to the seventeenth embodiment of the present invention. Detailed Implementation

[0058] The following description of examples of this application is provided to better understand it, and many anticipated advantages of other embodiments and embodiments will become apparent from the following detailed description. It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0059]

Example 1

[0060] Figure 1 This is a schematic diagram of the Micro-LED display device in this embodiment. The display pixel unit of this integrated Micro-LED display device includes a discrete driver chip 1 and three Micro-LED chips, namely a first Micro-LED chip 2, a second Micro-LED chip 3, and a third Micro-LED chip 4. The driver chip 1 drives the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4. In this embodiment, the driver chip 1 and the three Micro-LED chips are all disposed on the upper surface of the substrate 5. The driver chip 1 and the three Micro-LED chips are all flip-chip structures, with their bonding pins located on their lower surface, thereby enabling reflow soldering or eutectic bonding with the pads on the surface of the substrate 5.

[0061] In addition to supporting the chip bonding, substrate 5 also participates in the interconnection and power supply between chips. First and second metal wiring are respectively provided on the two surfaces of substrate 5. The first metal wiring, located on the upper surface of substrate 5, includes a first input lead 61, a first output lead 62, a first GND lead 63, a first LED lead 64, and a VCC lead 65. The second metal wiring, located on the lower surface of substrate 5, includes a negative bus 71 and a positive bus 72. The negative bus 71 and the positive bus 72 are connected to the first metal wiring through first and second conductive vias 81 and 82, respectively, forming a power supply current loop. Three first LED leads 64 are provided, corresponding to the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4, respectively. All first GND leads 63 pass through substrate 5 through first conductive vias 81 to achieve electrical conduction with the negative bus 71, and all VCC leads 65 pass through substrate 5 through second conductive vias 82 to achieve electrical conduction with the positive bus 72.

[0062] In this embodiment, the positive bus 72 and the negative bus 71 are both disposed on the lower surface of the substrate 5, and the driver chip 1 and the three Micro-LED chips are disposed on the upper surface of the substrate 5. This achieves spatial separation between the power supply circuit and the device, allowing the power supply current circuit to have wider wiring and to carry a larger current, thereby improving the power supply current.

[0063] Figure 2 This is a partial schematic diagram of the first surface of the Micro-LED display device in this embodiment. Figure 3 This is a schematic diagram of the circuit and soldering pins of the Micro-LED display device in this embodiment. Figure 4 This is a partial schematic diagram of the second surface of the Micro-LED display device in this embodiment. The driver chip 1 has a VCC pin 11, a GND pin 12, an input pin 13, an output pin 14, and an LED pin 15, with three LED pins. The VCC pin 11 is soldered to the VCC lead 65, and the GND pin 12 is soldered to the first GND lead 63. In the display pixel array, all display pixel units in the same column share the same negative bus 71 and the same positive bus 72.

[0064] The Micro-LED chip has a positive terminal 21 and a negative terminal 22. The positive terminal 21 of the Micro-LED chip is soldered to the VCC lead 65, and the negative terminal 22 of the Micro-LED chip is soldered to the corresponding first LED lead 64. The three LED pins of the driver chip 1 are soldered to their corresponding first LED leads 64. Thus, in each display pixel unit, the current flowing from all the Micro-LED chips in that display pixel unit flows through the driver chip 1 in that display pixel unit.

[0065] Multiple display pixel units are arranged in an array to form a display pixel array. In the display pixel array, the driver chips 1 in all display pixel units within the same row are connected in series end-to-end via a first output lead 62. One end of the first output lead 62 is soldered to the output pin 14 of the driver chip 1 in the preceding display pixel unit within the same row, and the other end of the first output lead 62 is soldered to the input pin 13 of the driver chip 1 in the following display pixel unit within the same row. For the driver chip 1 located in the first display pixel unit of each row, its input pin 13 is soldered to the first input lead 61, its output pin 14 is soldered to one end of the first output lead 62, and the other end of the first output lead 62 is soldered to the input pin 13 of the driver chip 1 in the next display pixel unit within the same row.

[0066] In each display pixel unit, the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 are all rectangular, and their long sides are parallel to each other. The arrangement direction of the Micro-LED chips is parallel to one side of the driver chip 1.

[0067] Figure 5 This is a longitudinal cross-sectional view of the Micro-LED display device in this embodiment, where the arrows indicate the direction of lateral light propagation. In this embodiment, the arrangement of the driving chip and Micro-LEDs ensures that the lateral light propagation between two adjacent display pixel units in the same row of the display pixel array is blocked by the driving chip 1, thereby eliminating lateral light crosstalk between the Micro-LED chips of adjacent display pixel units. Figure 5 As can also be seen in this embodiment, the driver chip 1 and the Micro-LED chip are located directly above the positive bus 72 and the negative bus 71, respectively. The heat generated by the chip can be conducted to the metal lines of the positive bus 72 and the negative bus 71 through the longitudinal heat transfer of the substrate 5, and then the heat can be transferred outward by taking advantage of the high thermal conductivity of the metal lines themselves.

[0068] In this embodiment, the light-emitting structure of the Micro-LED chip is specifically as follows: both the first Micro-LED chip 2 and the second Micro-LED chip 3 are provided with a first semiconductor layer, a multi-quantum-well light-emitting layer, and a second semiconductor layer. The multi-quantum-well light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer contains an n-type doped GaN layer and also contains a buffer layer. The multi-quantum-well light-emitting layer is composed of Al... x In y Ga z The second Micro-LED chip 3 is composed of alternating layers of semiconductors with different compositions (where x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) and thicknesses at the nanometer scale. The second semiconductor layer contains a p-type doped GaN layer and an electron blocking layer. The second Micro-LED chip 3 emits light in the blue band, with a typical peak wavelength of 467nm. The first Micro-LED chip 2 emits light in the green band, with a typical peak wavelength of 532nm. The third Micro-LED chip 4 comprises a first semiconductor layer, a multi-quantum-well light-emitting layer, and a second semiconductor layer. The multi-quantum-well light-emitting layer is disposed between the first and second semiconductor layers. The first semiconductor layer contains at least one p-type doped AlGaAs layer. The multi-quantum-well light-emitting layer is composed of Al... x Ga y In z The third Micro-LED chip 4 is composed of alternating layers of semiconductors with different compositions and thicknesses on the nanometer scale, where P (where x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) and the second semiconductor layer contains at least one layer of n-type doped AlGaAs. The emission spectrum of the third Micro-LED chip 4 is in the red light band, with a typical peak wavelength of 625nm.

[0069] This invention does not limit the arrangement order of multiple Micro-LED chips with different light-emitting structures. In this embodiment, for example... Figure 1 As shown, the second Micro-LED chip 3 is located between the first Micro-LED chip 2 and the third Micro-LED chip 4. Depending on the arrangement of the Micro-LED chips within the display pixel unit, different arrangement sequences can be used, such as the first Micro-LED chip 2 being located between the second Micro-LED chip 3 and the third Micro-LED chip 4, or the third Micro-LED chip 4 being located between the first Micro-LED chip 2 and the second Micro-LED chip 3.

[0070]

Example 2

[0071] Figure 6This is a partial schematic diagram of the first surface of the Micro-LED display device in this embodiment. Figure 7 This is a longitudinal cross-sectional view of the Micro-LED display device in this embodiment. In this embodiment, the GND pin 12 of the driver chip 1 is soldered to the negative bus 71. The second metal wiring also includes a second output lead 73, a second LED lead 74, and a second input lead 75. The second output lead 73 is connected to the first output lead 62 through a conductive via. The three LED pins 15 of the driver chip 1 are respectively soldered to their corresponding second LED leads 74, and the second LED leads 74 are respectively connected to the first LED leads 64 through conductive vias. The output pin 14 of the driver chip 1 is soldered to the second output lead 73, and the second output lead 73 is connected to one end of the first output lead 62 through a conductive via. The other end of the first output lead 62 serves as the first input lead 61 in the next display pixel unit in the same row. The first input lead 61 is connected to the second input lead 75 through a conductive via. The input pin 13 of the driver chip 1 is soldered to the second input lead 75.

[0072] The main difference from the display device in Embodiment 1 is that, in this embodiment, the driving chip 1 is disposed on the lower surface of the substrate 5, and the three Micro-LED chips—the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4—are disposed on the upper surface of the substrate 5. This reduces the lateral spacing between the driving chip 1 and the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 within each display pixel unit. By separating the vertical space, the lateral spacing is reduced, thereby reducing the lateral size of the display pixel unit.

[0073]

Example 3

[0074] Figure 8 This is a schematic diagram of the display device in this embodiment. Figure 9 This is a longitudinal cross-sectional view of the display device in this embodiment. In this embodiment, the first metal wiring disposed on the upper surface of the substrate 5 further includes a negative bus 71, and the positive bus 72 is still disposed on the lower surface of the substrate 5.

[0075] In the display pixel array, the VCC leads 65 all pass through the substrate 5 via the second conductive via 82 to achieve conduction with the positive bus 72.

[0076] The driver chip 1 has a VCC pin 11, a GND pin 12, an input pin 13, an output pin 14, and three LED pins 15. The VCC pin 11 is soldered to the positive bus 72. In the display pixel array, all display pixel units in the same column share the same negative bus 71 and the same positive bus 72.

[0077] The Micro-LED chip has a positive pin 21 and a negative pin 22. The positive pins 21 are soldered to the VCC lead 65, and the negative pins 22 are soldered to their corresponding LED leads 64. The second surface metal wiring includes a second output lead, a second LED lead, a second input lead 75, and a second GND lead. There are three second LED leads, corresponding to the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4, respectively. The second output lead 73 is connected to the first output lead 62 through a conductive via. The three LED pins 15 of the driver chip 1 are soldered to their corresponding second LED leads 74. The lower surface LED leads 74 are connected to the LED lead 64 through metal vias. The second GND lead is connected to the negative bus 71 through a metal via 81. The GND pin of the driver chip 1 is soldered to the second GND lead.

[0078] In the display pixel array, the driver chips 1 in all display pixel units in the same row are connected in series end to end via output leads 62. The output pin 14 of the driver chip 1 is soldered to the second output lead 73. The second output lead 73 is connected to one end of the first output lead 62 through a conductive via. The other end of the first output lead 62 serves as the first input lead 61 in the next display pixel unit in the same row. The first input lead 61 is connected to the second input lead 75 through a conductive via. The input pin 13 of the driver chip 1 is soldered to the second input lead 75.

[0079] The remaining wiring is the same as that of the display device shown in Example 2.

[0080] In this embodiment, the negative bus 71 is located vertically above the driver chip 1 in the direction perpendicular to the substrate, and the two are stacked together, thereby reducing the lateral size of the display pixel unit.

[0081]

Example 4

[0082] The main difference between the display device in this embodiment and Embodiment 1 lies in the light-emitting structure of the Micro-LED chip. This embodiment uses a blue Micro-LED chip array combined with red and green fluorescence conversion to achieve full-color display. The first, second, and third Micro-LED chips are all identical. Each of the first, second, and third Micro-LED chips has a first semiconductor layer, a multi-quantum-well light-emitting layer, and a second semiconductor layer. The multi-quantum-well light-emitting layer is disposed between the first and second semiconductor layers. The first semiconductor layer contains an n-type doped GaN layer and a buffer layer. The multi-quantum-well light-emitting layer is formed by alternating stacks of two semiconductor layers with different compositions and nanometer-scale thicknesses, with the chemical formula AlxInyGazN (where x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1). The second semiconductor layer contains a p-type doped GaN layer and an electron-blocking layer. The first, second, and third Micro-LED chips all emit blue light, with a typical peak wavelength of 467nm.

[0083] Blue light is converted using red and green fluorescent materials. These materials include, but are not limited to, quantum dots, nanocrystalline luminescent materials, rare-earth ion-doped phosphors, and manganese ion-doped phosphors. Specifically:

[0084] A first fluorescence conversion layer is disposed above the first Micro-LED chip. The first fluorescence conversion layer emits green light when excited by blue light, thereby converting the light emitted from above the first Micro-LED chip into green light. The first fluorescence conversion layer contains first light-emitting particles, which are composed of quantum dots or rare-earth ion-doped light-emitting materials. The quantum dots are selected from any one or more of InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, and perovskite structure CsPbX3 (X = Cl, Br, I) quantum dots. The rare-earth ion-doped light-emitting materials include Eu... 2+ Doping with β-Sialon, Eu 2+ One or more of Li2CaSiO4 are doped.

[0085] A second fluorescence conversion layer is disposed above the third Micro-LED chip. This second fluorescence conversion layer emits red light when excited by blue light, thus converting the light emitted from above the third Micro-LED chip into red light. The second fluorescence conversion layer contains second light-emitting particles, which are composed of quantum dots, rare-earth ion-doped luminescent materials, or fluoride phosphors. The quantum dots are selected from any one of InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, and perovskite structure CsPbX3 (X = Cl, Br, I) quantum dots. The rare-earth ion-doped luminescent materials include rare-earth ions such as Eu. 2+ Doped with CaAlSiN3, Eu 2+ Doped Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)₂Si₅N₈:Eu 2+ and Pr 3+ Doping with any of YAG; fluoride phosphors include Mn 4+ Doped with K2SiF6 phosphor, Mn 4+ Doped with K2GeF6 phosphor, Mn 4+ Any one of the K2TiF6 phosphors.

[0086]

Example 5

[0087] Figure 10 This is a schematic diagram of the display device in this embodiment. The main difference from the display device in embodiment 3 is that the negative bus 71 and the positive bus 72 are perpendicular to each other in space in this embodiment. Therefore, the horizontal distance between the Micro-LED chip and the positive bus 72 can be reduced, thereby reducing the area occupied by the pixel unit wiring. The pixel resolution can be improved by reducing the pixel size, or the light transmittance can be improved by increasing the proportion of the light-transmitting area of ​​the transparent display.

[0088]

Example 6

[0089] Figure 11 This is a schematic diagram of the display device in this embodiment. Figure 12 This is a longitudinal cross-sectional view of the display device in this embodiment. Unlike embodiment 3, in this embodiment, the driving chip 1 is disposed vertically below the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4. By vertically stacking the driving chip 1 and the Micro-LED chips, the lateral size of the display pixel unit is reduced, thereby maximizing the resolution of the display screen and achieving ultra-high resolution display.

[0090]

Example 7

[0091] Figure 13 This is a schematic diagram of the display device in this embodiment. Figure 14 This is a schematic diagram of the structure of the multi-in-one Micro-LED chip 9 in this embodiment. In this embodiment, the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 are disposed on the same carrier substrate 91 to form the multi-in-one Micro-LED chip 9. The first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 are arranged sequentially along the long side of the multi-in-one Micro-LED chip 9.

[0092] By using an all-in-one Micro-LED chip, the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 can be bonded together in one bonding process, achieving high-efficiency manufacturing.

[0093]

Example 8

[0094] Figure 15 This is a schematic diagram of the structure of the multi-in-one Micro-LED chip in this embodiment. The main difference from Embodiment 7 is that in this embodiment, each Micro-LED chip is provided with ( Figure 15 The figure only shows the first semiconductor layer 92 and several island-shaped light-emitting structures in the third Micro-LED chip 4 (reference numerals 92-97). The width of a single island-shaped light-emitting structure is smaller than the width of the first semiconductor layer 92. The island-shaped light-emitting structure is provided with a third semiconductor layer 93, a multi-quantum well light-emitting layer 94, a second semiconductor layer 95, and a current spreading layer 96. The multi-quantum well light-emitting layer 94 is disposed between the third semiconductor layer 93 and the second semiconductor layer 95. The third semiconductor layer 93 has the same composition as the first semiconductor layer 92. The top surface of the third semiconductor layer 93 is connected to the lower surface of the first semiconductor layer 92. The sidewalls of a single island-shaped light-emitting structure are provided with an inner insulating layer, and a planarization layer is filled between the island-shaped light-emitting structures.

[0095] The island-shaped light-emitting structure is a cylinder with a diameter between 150 nanometers and 2 micrometers. The areas on the lower surface of the first semiconductor layer 92 that are not island-shaped light-emitting structures are covered with a mask layer 97, which is made of titanium, silicon dioxide, or silicon nitride.

[0096] The island-shaped light-emitting structure of the second Micro-LED chip 3 has a diameter between 1 micrometer and 2 micrometers. The light emitted by the multi-quantum well light-emitting layer 94, passing through the first semiconductor layer 92, and finally exiting from the upper surface of the carrier substrate 91 is blue light.

[0097] When the diameter of the island-shaped light-emitting structure of the first Micro-LED chip 2 is between 500 nanometers and 1 micrometer, the light emitted by the multi-quantum-well light-emitting layer 94, passing through the first semiconductor layer 92, and finally exiting from the upper surface of the carrier substrate 91 is green light.

[0098] The island-shaped light-emitting structure of the third Micro-LED chip 4 has a diameter between 150 nanometers and 200 nanometers. The light emitted by the multi-quantum well light-emitting layer 94, passing through the first semiconductor layer 92, and finally exiting from the upper surface of the substrate 91 is red light.

[0099]

Example 9

[0100] Figure 16 This is a schematic diagram of the structure of the multi-in-one Micro-LED chip in this embodiment. In this embodiment, the Micro-LED chip is provided with a first semiconductor layer 92, a third semiconductor layer 93, a multi-quantum-well light-emitting layer 94, and a second semiconductor layer 95. The multi-quantum-well light-emitting layer 94 is disposed between the third semiconductor layer 93 and the second semiconductor layer 95. The third semiconductor layer 93 and the first semiconductor layer 92 have the same composition, and the top surface of the third semiconductor layer 93 is connected to the lower surface of the first semiconductor layer 92. The main difference from Embodiment 7 is that the epitaxial layers of the second Micro-LED chip 3 and the third Micro-LED chip 4 are etched to form an island-shaped light-emitting structure. The island-shaped light-emitting structure is an annular column and is provided with an annular wall 101 and an inner cavity 102. Figure 16 Only reference numerals 101 and 102 are shown in the figure for the third Micro-LED chip 4. The wall thickness of the annular cylindrical island-shaped light-emitting structure is between 100 and 200 nanometers. The epitaxial layer of the first Micro-LED chip 2 has a planar structure, and the light emitted by its multi-quantum-well light-emitting layer 94 is green. The second Micro-LED chip 3 and the third Micro-LED chip 4, which have annular cylindrical island-shaped light-emitting structures, emit blue light from their multi-quantum-well light-emitting layers 94 due to stress relaxation.

[0101] A through-hole 98 is provided on the substrate 91, and the through-hole 98 corresponds one-to-one with the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 in the vertical direction. A red light fluorescence conversion layer 99 is provided in the through-hole 98 corresponding to the third Micro-LED chip 4. The red light fluorescence conversion layer 99 can emit red light under blue light excitation, thereby converting the blue light emitted from the multi-quantum-well light-emitting layer 94 of the third Micro-LED chip 4 and emitted from the through-hole 98 into red light. The red light fluorescence conversion layer 99 contains red light-emitting particles, which are composed of quantum dots, rare earth ion-doped luminescent materials, or fluoride phosphors. The quantum dots are selected from any one of InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, and perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots. The rare earth ion-doped luminescent materials include rare earth ions Eu. 2+ Doped with CaAlSiN3, Eu 2+ Doped Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)₂Si₅N₈:Eu 2+ and Pr 3+ Doping with any of YAG; fluoride phosphors include Mn 4+ Doped with K2SiF6 phosphor, Mn 4+ Doped with K2GeF6 phosphor, Mn 4+ Any one of the K2TiF6 phosphors.

[0102]

Example 10

[0103] Figure 17 This is a schematic diagram of the structure of the display device in this embodiment. The difference from Embodiment 3 is that the display device in this embodiment is provided with a driver chip 1 and two Micro-LED chips. The two Micro-LED chips are a two-in-one Micro-LED chip 10 and a third Micro-LED chip 4, which can simplify the material system of the display device.

[0104] Specifically, the light-emitting structure of the two-in-one Micro-LED chip 10 is similar to that of the three-in-one Micro-LED chip in Example 9, which is a ring-shaped cylindrical island light-emitting structure, in which the two Micro-LED chips emit blue light and green light respectively. The third Micro-LED chip 4 emits red light.

[0105]

Example 11

[0106] Figure 18This is a schematic diagram of the display device in this embodiment. The main difference from Embodiment 3 is that each display pixel unit in this embodiment includes four Micro-LED chips: a first Micro-LED chip 2, a second Micro-LED chip 3, a third Micro-LED chip 4, and a fourth Micro-LED chip 41. The first Micro-LED chip 2 and the fourth Micro-LED chip 41 emit light in the red light band. In another embodiment, the fourth Micro-LED chip 41 can also be a white LED chip.

[0107]

Example 12

[0108] Figure 19 This is a schematic diagram of the display device in this embodiment. The main difference from the display device shown in Embodiment 1 is that the first Micro-LED chip 2, the second Micro-LED chip 3, and the third Micro-LED chip 4 are first packaged on a MiP (Micro-LED in Package) substrate to form a MiP package 200. The MiP package 200 is then soldered to the upper surface of the substrate 5, achieving electrical conductivity between the substrate 5 and the Micro-LED chips. Subsequently, a first optical adhesive layer 300 is covered over the entire display pixel unit to achieve sealed protection for all devices and circuits.

[0109] By first packaging the Micro-LED chip into a MiP package 200, the photoelectric parameters of the MiP package 200 can be measured and graded during production, thereby achieving high consistency of photoelectric parameters among the pixel units in the display screen, and ultimately achieving a high-quality display effect.

[0110]

Example 13

[0111] Figure 20 This is a schematic diagram of the display device in this embodiment. The main difference from Embodiment 12 is that the packaging substrate of the display device in this embodiment is covered with a third optical adhesive layer 201, which is used to seal and protect the MiP package 200, thereby preventing the Micro-LED chip inside the MiP package 200 from being scratched.

[0112]

Example 14

[0113] Figure 21 This is a longitudinal cross-sectional view of the display device in this embodiment. The main difference from Embodiment 13 is that the top and side surfaces of the driver chip 1 of the display device in this embodiment are further covered with a light-shielding adhesive layer 202 for light-shielding treatment of the driver chip 1. The light-shielding adhesive layer 202 can be white or black.

[0114]

Example 15

[0115] Figure 22 This is a longitudinal cross-sectional view of the display device in this embodiment. The main difference from Embodiment 14 is that, in this embodiment, the display device is further covered with a second optical adhesive layer 400 on the entire lower surface of the substrate 5, achieving sealed protection for all devices and circuits. The substrate 5 is made of a transparent material, such as glass or transparent PI, so that light can pass through in non-wiring areas, thereby achieving high-resolution transparent display.

[0116]

Example 16

[0117] Figure 23 This is a longitudinal cross-sectional view of the display device in this embodiment. In this embodiment, the display device includes two substrates 5, three layers of metal wiring, and two layers of insulating dielectric. The negative bus 71 and the positive bus 72 are both disposed between the two layers of insulating dielectric. Taking the metal wiring layer containing the negative bus 71 and the positive bus 72 as the plane of symmetry, the substrate 5 and the driving chip 1 and the MiP package 200 disposed on it are symmetrically arranged. Compared with Embodiment 13, in this embodiment, the two display pixel units are arranged back to back, thereby realizing a high-resolution double-sided display screen.

[0118]

Example 17

[0119] Figure 24 This is a longitudinal cross-sectional view of the display device in this embodiment. In this embodiment, the display device includes two substrates 501, four layers of metal wiring, a buried layer, and two layers of insulating dielectric. The driver chip 1 is disposed in the buried layer 501. The substrates 5 are symmetrically arranged on their upper and lower surfaces, and two MiP packages 200 are controlled by the same driver chip 1. This enables double-sided display, where both MiP packages 200 on both sides receive the same driving signal, allowing the display images on both sides of the screen to be synchronized in real time.

[0120] The above preferred embodiment describes an integrated Micro-LED display device, which bonds the discrete driver chip and Micro-LED chip together to the circuit board to realize one-to-many integrated driving of the driver chip and Micro-LED chip; in each display pixel unit, the current flowing from all Micro-LED chips in the display pixel unit flows through the driver chip in the display pixel unit, thereby increasing the current supplied to the Micro-LED chip.

[0121] The above are preferred embodiments of this application. Obviously, those skilled in the art can make various modifications and changes to the embodiments of this application without departing from the spirit and scope of this application. In this way, if such modifications and changes fall within the scope of the claims of this application and their equivalents, this application also intends to cover such modifications and changes.

Claims

1. An integrated Micro-LED display device, characterized in that, The device includes a substrate and multiple display pixel units bonded to the substrate. Each display pixel unit includes a driver chip and several Micro-LED chips that are discretely separated from each other. A first metal wiring for connecting the display pixel units is provided on a first surface of the substrate, and a second metal wiring for connecting the display pixel units is provided on a second surface of the substrate. A portion of the first metal wiring and a portion of the second metal wiring are connected through several conductive vias formed on the substrate. The first metal wiring and / or the second metal wiring include a positive bus and a negative bus. The driver chip and the several Micro-LED chips are flip-chip chips and are electrically connected between the positive bus and the negative bus. The driver chip and at least one of the buses are respectively disposed on different surfaces of the substrate. The first metal wiring includes a GND lead, a VCC lead, and several first LED leads corresponding to the several Micro-LED chips. The GND lead is connected to the negative bus, and the VCC lead is connected to the positive bus. The driver chip is provided with a VCC pin, a GND pin, and a plurality of LED pins corresponding to a plurality of Micro-LED chips. The VCC pin is electrically connected to the VCC lead, and the GND pin is electrically connected to the GND lead. Each of the aforementioned Micro-LED chips is provided with a positive terminal and a negative terminal. The positive terminal is electrically connected to the VCC lead, and the negative terminal is electrically connected to the corresponding first LED leads. The LED leads are respectively electrically connected to the corresponding first LED leads, so that the current flowing through the Micro-LED chips in the display pixel unit flows through the driver chip in the display pixel unit. The Micro-LED chips belonging to the same display pixel unit are arranged in a row and the arrangement direction is parallel to one side of the driver chip belonging to that display pixel unit.

2. The integrated Micro-LED display device according to claim 1, characterized in that, The driver chip is disposed on the first surface of the substrate, and the positive bus and the negative bus are both disposed on the second surface of the substrate.

3. The integrated Micro-LED display device according to claim 2, characterized in that, Several of the Micro-LED chips are disposed on the first surface of the substrate.

4. The integrated Micro-LED display device according to claim 3, characterized in that, Several of the Micro-LED chips and the driver chip are located directly above the positive bus and the negative bus, respectively.

5. The integrated Micro-LED display device according to claim 1, characterized in that, The negative bus is disposed on the first surface of the substrate, and the positive bus is disposed on the second surface of the substrate.

6. The integrated Micro-LED display device according to claim 1, characterized in that, The driving chip and several Micro-LED chips belonging to the same display pixel unit are respectively disposed on different surfaces in the same area of ​​the substrate.

7. The integrated Micro-LED display device according to claim 6, characterized in that, The driver chip and the positive bus for connecting the driver chip are disposed on the same surface of the substrate and stacked in a direction perpendicular to the substrate.

8. The integrated Micro-LED display device according to claim 7, characterized in that, The negative bus for connecting the driver chip is disposed on another surface of the substrate and stacked with the driver chip in a direction perpendicular to the substrate.

9. The integrated Micro-LED display device according to claim 8, characterized in that, The negative bus and the positive bus extend perpendicularly to each other.

10. The integrated Micro-LED display device according to claim 6, characterized in that, The driving chip and several Micro-LED chips belonging to the same display pixel unit are stacked in a direction perpendicular to the substrate.

11. The integrated Micro-LED display device according to claim 1, characterized in that, The Micro-LED chip is a combination of three primary color Micro-LED chips, including blue, green and red Micro-LED chips, or a combination of a blue Micro-LED chip, a blue Micro-LED chip coated with red fluorescent material and a blue Micro-LED chip coated with green fluorescent material.

12. The integrated Micro-LED display device according to claim 1, characterized in that, Some or all of the plurality of Micro-LED chips belonging to the same display pixel unit are fixed on the same carrier substrate to form an all-in-one Micro-LED chip, and are bonded to the substrate through the same carrier substrate.

13. The integrated Micro-LED display device according to claim 12, characterized in that, The all-in-one Micro-LED chip has an island-shaped light-emitting structure, which is a cylinder or annular cylinder.

14. The integrated Micro-LED display device according to claim 1, characterized in that, Each display pixel unit has 4 Micro-LED chips.

15. The integrated Micro-LED display device according to claim 14, characterized in that, Two of the four Micro-LED chips emit red light, while the other two emit blue and green light, respectively.

16. The integrated Micro-LED display device according to claim 14, characterized in that, The four Micro-LED chips emit red, blue, green, and white light, respectively.

17. The integrated Micro-LED display device according to claim 1, characterized in that, The aforementioned Micro-LED chips are packaged as MiP packages.

18. The integrated Micro-LED display device according to claim 17, characterized in that, An optical adhesive layer is applied above and / or below the MiP package, the display pixel unit, and / or the substrate for sealing and protection.

19. The integrated Micro-LED display device according to claim 1, characterized in that, The surface of the driver chip is covered with a light-shielding adhesive layer for light-shielding treatment.

20. The integrated Micro-LED display device according to claim 1, characterized in that, The substrate is transparent.

21. The integrated Micro-LED display device according to claim 2, characterized in that, With the plane where the Micro-LED is set as the front side, several Micro-LEDs are symmetrically arranged on the back side to achieve double-sided display.

22. The integrated Micro-LED display device according to claim 21, characterized in that, The same driver chip is used to drive the Micro-LEDs on both sides.

23. The integrated Micro-LED display device according to claim 1, characterized in that, The array of multiple display pixel units is arranged such that the driving chips of the display pixel units in the same row are connected in series end to end to form an electrical connection.

24. A display panel, characterized in that, Includes the integrated Micro-LED display device according to any one of claims 1-23.

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