Laser lift-off method of gaas substrate and epitaxial structure

Abstract

The application discloses a laser stripping method of a GaAs substrate and an epitaxial structure. The laser stripping method comprises the following steps: growing a stripping layer on the GaAs substrate, wherein the stripping layer comprises at least one layer of N-doped semiconductor compound layer, the N-doped semiconductor compound layer can be decomposed by laser irradiation, the N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can bear, and the band gap of the N-doped semiconductor compound layer is less than the band gap of the GaAs substrate, the N-doped semiconductor compound layer comprises In x Ga 1‑x N y As 1‑y semiconductor layer, wherein y is less than 6%; growing a vertical cavity surface emitting laser epitaxial structure on the stripping layer; and penetrating the GaAs substrate with laser and irradiating the stripping layer to decompose the stripping layer, so as to separate the GaAs substrate and the vertical cavity surface emitting laser epitaxial structure. The laser stripping method can reduce the impact force generated when the stripping layer is irradiated by laser, and the GaAs substrate can be separated as a whole and is not easy to be damaged.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process and device technology, and in particular to a laser lift-off method for GaAs substrates and an epitaxial structure for a vertical cavity surface laser emitter on a GaAs substrate. Background Technology

[0002] As the applications of VCSEL devices become more diversified, these devices require high output and high-voltage drive. Due to this high output and high-voltage drive, the heat generated within the VCSEL device causes its temperature to rise. However, insufficient heat dissipation from the VCSEL device can reduce light output and power conversion efficiency (PCE) as the temperature increases. Therefore, there is a need for methods to effectively dissipate the heat generated in VCSEL devices and increase PCE. For example, in traditional VCSEL structures, the light-emitting active region conducts heat through a GaAs substrate. Since GaAs is not a very good thermal conductor, heat cannot be dissipated in a timely manner, affecting the junction temperature and limiting the operating temperature range, pulse width, and duty cycle of the drive current. To achieve better thermal conductivity, the GaAs substrate is removed and physically bonded to a more thermally conductive substrate, such as a metal substrate, which can more effectively improve heat dissipation and enhance the performance of the VCSEL chip.

[0003] However, the common method for removing GaAs involves physical thinning and chemical etching. During physical thinning, the mechanical stress can easily cause VCSEL wafers, especially large ones, to crack. Furthermore, removing 300-700 micrometers of GaAs during both physical thinning and chemical etching generates a large amount of GaAs-containing waste liquid that requires treatment. This also significantly increases the process cost. Moreover, during prolonged etching, the liquid may corrode the material between the wafer and the substrate, or penetrate the interface, damaging other areas that should not be etched and affecting yield.

[0004] The information disclosed in this background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to provide a laser lift-off method for GaAs substrates and an epitaxial structure of a vertical cavity surface laser emitter on a GaAs substrate. The laser lift-off method of this invention can reduce the impact force generated when the lift-off layer is irradiated by laser, so that the GaAs substrate can be detached as a whole, and it is not easy to damage the GaAs substrate.

[0006] To achieve the above objectives, embodiments of the present invention provide a laser lift-off method for a GaAs substrate, comprising: growing a lift-off layer on the GaAs substrate, the lift-off layer comprising at least one N-doped semiconductor compound layer, the N-doped semiconductor compound layer being decomposed by laser irradiation, adjusting the N content in the N-doped semiconductor compound layer so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate, the N-doped semiconductor compound layer comprising In x Ga 1-x N y As 1-y A semiconductor layer, wherein y < 6%; a vertical cavity surface laser emitter epitaxial structure is grown on the release layer; a laser is used to penetrate the GaAs substrate and irradiate the release layer to decompose the release layer, thereby separating the GaAs substrate and the vertical cavity surface laser emitter epitaxial structure.

[0007] In one or more embodiments of the present invention, the In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5, the In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5nm and 1000nm.

[0008] In one or more embodiments of the present invention, the In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0009] In one or more embodiments of the present invention, the wavelength energy level of the laser irradiating the release layer is smaller than the bandgap of the GaAs substrate, and larger than the In... x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0010] In one or more embodiments of the present invention, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains unchanged along the thickness direction of the vertical cavity surface laser emitter epitaxial structure.

[0011] In one or more embodiments of the present invention, the release layer comprises multiple N-doped semiconductor compound layers, wherein the amount of N doping in the multiple N-doped semiconductor compound layers is the same or different.

[0012] In one or more embodiments of the present invention, prior to growing a release layer on a GaAs substrate, a buffer layer is further grown on the GaAs substrate, the release layer being grown on the buffer layer.

[0013] In one or more embodiments of the present invention, before growing the vertical cavity surface laser emitter epitaxial structure on the release layer, a buffer layer is further grown on the release layer, wherein the vertical cavity surface laser emitter epitaxial structure is grown on the buffer layer.

[0014] In one or more embodiments of the present invention, before growing the vertical cavity surface laser emitter epitaxial structure on the release layer, a barrier layer is further grown on the release layer, wherein the vertical cavity surface laser emitter epitaxial structure is grown on the barrier layer.

[0015] In one or more embodiments of the present invention, one or more buffer layers and one or more release layers are grown between the GaAs substrate and the vertical cavity surface laser emitter epitaxial structure, wherein the buffer layer and the release layer are grown alternately.

[0016] This invention also provides a vertical-cavity surface-mount laser (VCSEL) epitaxial structure on a GaAs substrate, which can be achieved by using the laser lift-off method described above. The structure includes: a GaAs substrate, a lift-off layer, and a VCSEL epitaxial structure. The lift-off layer is formed on the surface of the GaAs substrate and includes at least one N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can withstand. Furthermore, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The N-doped semiconductor compound layer includes In... x Ga 1-x N y As 1-y A semiconductor layer, wherein y < 6%. The vertical cavity surface laser emitter epitaxial structure is formed on the side of the release layer opposite to the GaAs substrate.

[0017] In one or more embodiments of the present invention, the In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5, the In x Ga1-x N y As 1-y The thickness of the semiconductor layer is between 5nm and 1000nm.

[0018] In one or more embodiments of the present invention, the In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0019] In one or more embodiments of the present invention, the release layer comprises multiple N-doped semiconductor compound layers, wherein the amount of N doping in the multiple N-doped semiconductor compound layers is the same or different.

[0020] In one or more embodiments of the present invention, the release layer comprises multiple N-doped semiconductor compound layers, and a buffer layer is disposed between adjacent N-doped semiconductor compound layers.

[0021] In one or more embodiments of the present invention, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains unchanged along the thickness direction of the vertical cavity surface laser emitter epitaxial structure.

[0022] In one or more embodiments of the present invention, a buffer layer is further provided between the GaAs substrate and the release layer and / or between the release layer and the vertical cavity surface laser emitter epitaxial structure.

[0023] In one or more embodiments of the present invention, a barrier layer is further provided between the vertical cavity surface laser emitter epitaxial structure and the stripping layer.

[0024] In one or more embodiments of the present invention, one or more buffer layers and one or more release layers are disposed between the vertical cavity surface laser emitter epitaxial structure and the GaAs substrate, wherein the buffer layer and the release layer are disposed alternately.

[0025] Compared with existing technologies, the laser lift-off method for GaAs substrates according to the embodiments of the present invention can reduce the impact force generated when the lift-off layer is irradiated by laser, thereby reducing the impact force borne by the GaAs substrate during lift-off, allowing the GaAs substrate to be detached as a whole, and reducing the risk of damage to the GaAs substrate. It eliminates the need for physical or physicochemical thinning processes, reducing the probability of physical damage and improving yield.

[0026] The laser lift-off method for GaAs substrates according to embodiments of the present invention uses In x Ga 1-x N y As 1-yLimiting the nitrogen (N) content in the semiconductor layer effectively controls the impact force generated during its decomposition, preventing excessive impact force from affecting GaAs and the epitaxial layer. Simultaneously, limiting the In content... x Ga 1-x N y As 1-y The range of x and y in the semiconductor layer makes In x Ga 1-x N y As 1-y The semiconductor layer can be adapted to the lattice of the GaAs substrate, facilitating In... x Ga 1-x N y As 1-y Semiconductor layer growth can also enable In x Ga 1-x N y As 1-y The semiconductor layer can be largely absorbed and decomposed by lasers, which facilitates laser stripping of GaAs substrates.

[0027] The laser lift-off method for GaAs substrates according to the embodiments of the present invention greatly reduces the amount of waste liquid containing As and lowers the cost of waste disposal.

[0028] The laser lift-off method for GaAs substrates according to embodiments of the present invention allows for the recycling of the entire GaAs substrate, reducing costs.

[0029] The vertical cavity surface laser emitter epitaxial structure on a GaAs substrate according to the embodiments of the present invention can improve the yield of the epitaxial structure by non-destructively lifting the GaAs substrate with laser. Attached Figure Description

[0030] Figure 1 This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 1 of the present invention;

[0031] Figure 2 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 1 of the present invention;

[0032] Figure 3 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 2 of the present invention;

[0033] Figure 4 This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 3 of the present invention;

[0034] Figure 5 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 3 of the present invention;

[0035] Figure 6This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 4 of the present invention;

[0036] Figure 7 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 4 of the present invention;

[0037] Figure 8 This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 5 of the present invention;

[0038] Figure 9 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 5 of the present invention;

[0039] Figure 10 This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 6 of the present invention;

[0040] Figure 11 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 6 of the present invention;

[0041] Figure 12 This is a schematic flowchart of the laser lift-off method for GaAs substrate according to Embodiment 7 of the present invention;

[0042] Figure 13 This is the vertical cavity surface laser emitter epitaxial structure on a GaAs substrate in Embodiment 7 of the present invention. Detailed Implementation

[0043] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0044] Unless otherwise expressly stated, throughout the specification and claims, the term "comprising" or its variations such as "including" or "comprises" shall be understood to include the stated elements or components without excluding other elements or other components.

[0045] VCSEL (Vertical Cavity Surface Emitting Laser) is a type of laser that emits light from a surface. Its structure involves epitaxial growth of a highly reflective upper distributed Bragg reflector (DBR) and a lower DBR. The active region and a resonant cavity in the vertical direction lie between the upper and lower DBRs. The DBR is a multilayer system composed of two semiconductor epitaxial films with different refractive indices. Based on the theory of stimulated emission, this system, when subjected to an injected current, produces a weak light, which excites a strong light (light amplification due to stimulated emission). The light then exits from the surface, hence the name "vertical cavity surface emitting laser."

[0046] Compared to LEDs (Light Emitting Diodes) and EELs (Edge Emitting Lasers), VCSELs have many advantages. For example, they have small active size, low threshold voltage, small wavelength drift coefficient with temperature change, high quality of emitted circular light spot, high reliability, simple packaging, and can be formed into two-dimensional laser arrays, which leads to their widespread application.

[0047] Since its inception, VCSEL has become a light source for many application fields, serving optical communication, optical interconnection, laser printing, and optical storage. Since Apple introduced VCSEL into its iPhones to enable powerful facial recognition, it has opened up new applications for VCSEL sensing. This has demonstrated the potential of VCSEL light sources, making it a focus of industry attention. VCSEL chips are not only used in facial recognition but also widely applied in autonomous driving, machine vision, gesture recognition, robot navigation, drone collision avoidance, and driver fatigue prevention.

[0048] As mentioned in the background section, VCSEL devices driven by high output and high voltage experience rapid temperature rise, often leading to a decrease in light output and power conversion efficiency (PCE). In traditional VCSEL structures with GaAs substrates, the active light-emitting region conducts heat through the GaAs substrate. However, since GaAs is not a very good thermal conductor, heat cannot be dissipated in a timely manner, affecting the junction temperature and limiting the operating temperature range of the VCSEL, as well as the pulse width and duty cycle of the drive current. Therefore, it is necessary to peel off the GaAs substrate and bond it to a metal substrate with higher thermal conductivity to improve the heat dissipation performance of the device.

[0049] However, in the existing technology, the removal of GaAs substrates for VCSEL devices is usually done by physical thinning and liquid etching. This method is prone to damage and destruction of the epitaxial structure and generates a large amount of waste liquid, which affects the yield and increases the process cost.

[0050] Laser lift-off technology, an existing technology in the LED field, involves irradiating the sapphire substrate and the lift-off layer in the epitaxial structure of the LED, causing the lift-off layer to absorb light and decompose, thus lifting off the sapphire substrate. However, for VCSEL devices using GaAs as the substrate, the mechanical strength of the GaAs substrate is very low, and using a conventional lift-off layer for laser lift-off easily leads to GaAs substrate breakage. Specifically, during laser lift-off, the lift-off layer decomposes after absorbing the laser and generates gas. The outward force of the gas promotes the separation of the substrate and the epitaxial layer. Conventional lift-off layers, firstly, generate extremely strong impact forces when decomposed by laser irradiation, which greatly increases the probability of GaAs substrate breakage when applied to it; secondly, it is difficult to achieve high-quality growth of the GaN lift-off layer on the GaAs substrate using conventional sapphire substrates.

[0051] Therefore, finding a suitable release layer material for GaAs substrate lift-off in the laser field is extremely difficult and not easily achievable. Currently, there are no existing technologies that disclose a technical solution for laser-based substrate lift-off in the laser field.

[0052] One embodiment of the present invention provides a laser lift-off method for a GaAs substrate, specifically comprising: growing a lift-off layer on the GaAs substrate, the lift-off layer comprising at least one N-doped semiconductor compound layer, the N-doped semiconductor compound layer being decomposed by laser irradiation; adjusting the N content in the N-doped semiconductor compound layer so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the bandgap of the N-doped semiconductor compound layer is less than the bandgap of the GaAs substrate; growing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure on the lift-off layer; and using a laser to penetrate the GaAs substrate and irradiate the lift-off layer to decompose the lift-off layer, thereby separating the GaAs substrate and the VCSEL epitaxial structure.

[0053] The N-doped semiconductor compound layer includes In x Ga 1-x N y As 1-y Semiconductor layer, In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5, y < 6%. x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1- x Ny As 1-y In the semiconductor layer, x < 0.5, y < 4%. Experiments show that when x < 0.5, y < 6%, In x Ga 1-x N y As 1-y When the semiconductor layer is decomposed by laser irradiation, the maximum impact force generated is less than or equal to the maximum impact force that the GaAs substrate can withstand. When the GaAs substrate is peeled off, the integrity of the substrate and its epitaxial structure can be guaranteed.

[0054] Secondly, In x Ga 1-x N y As 1-y As a nitrogen-doped semiconductor compound layer, experiments have shown that as the nitrogen content increases, In... x Ga 1-x N y As 1-y The growth rate of semiconductor layers becomes exceptionally slow and difficult, and the growth becomes increasingly challenging and costly as the nitrogen content increases. For example, when the nitrogen content is less than 4%, the growth rate is relatively fast, meeting industry requirements; when the nitrogen content is 4%, the growth rate is more than three times slower than when the nitrogen content is 2%; when the nitrogen content is 6%, the growth rate is at least five times lower than when the nitrogen content is 2%, and when the nitrogen content exceeds 6%, experiments have shown that it is difficult to achieve using VCSEL-compatible processes and equipment.

[0055] Meanwhile, referring to Table 1, Table 1 shows that when In is selected... x Ga 1-x N y As 1-y When the semiconductor layer is used as a laser lift-off layer on a GaAs substrate, controlling In... x Ga 1-x N y As 1-y By keeping the In content in the semiconductor layer below 0.5% and the N content below 0.06%, the In content can be effectively reduced. x Ga 1-x N y As 1-y The degree of lattice mismatch between the semiconductor layer and the GaAs substrate greatly reduces the In... x Ga 1-x N y As 1-y Defects in epitaxial growth on semiconductor layers. Especially when the In content is below 0.3%, In... x Ga 1- x N yAs 1-y The lattice mismatch between the semiconductor layer and the GaAs substrate has reached less than 2%, effectively solving the problem of excessive defects caused by lattice mismatch.

[0056]

[0057] Furthermore, experiments have shown that when In is selected... x Ga 1-x N y As 1-y When the semiconductor layer is used as a laser lift-off layer on a GaAs substrate, controlling In... x Ga 1-x N y As 1-y When the nitrogen content in the semiconductor layer is below 0.06%, especially below 0.04%, the In content can be guaranteed. x Ga 1- x N y As 1-y The bandgap of the semiconductor layer falls within the absorption range of most available lasers, further increasing the success rate of laser-based non-destructive lift-off of GaAs substrates. Meanwhile, the N content is between 4% and 6% for In... x Ga 1-x N y As 1-y The energy band of the semiconductor layer is too low, so only a small number of long-wavelength laser wavelengths, which are not commonly used in semiconductors, can be used for irradiation and stripping. Based on this, the In of this application... x Ga 1-x N y As 1-y When the semiconductor layer is used as a release layer, it is preferable that x < 0.5 and y < 4%.

[0058] Therefore, when In x Ga 1-x N y As 1-y When the nitrogen content in the semiconductor layer is <4%, it not only meets the requirement that the nitrogen can be decomposed by laser irradiation, but also ensures that the impact force generated during laser decomposition will not significantly affect the GaAs substrate and cause damage. Furthermore, when the In content is controlled... x Ga 1-x N y As 1-y When the nitrogen content in the semiconductor layer is less than 4%, the release layer can be stripped by laser wavelengths commonly used in semiconductors, and it can also have a faster growth rate on the GaAs substrate surface, saving costs and making it suitable for the technology industry.

[0059] Furthermore, control In x Ga 1-x N y As1-y Maintaining the thickness of the semiconductor layer, between 5nm and 1000nm, facilitates the non-destructive and thorough removal of the GaAs substrate. Experiments show that when In... x Ga 1-x N y As 1-y When the semiconductor layer thickness is greater than 1000 nm, In x Ga 1-x N y As 1-y The cost of growing semiconductor layers is too high, and the quality of the resulting release layer crystals and the required separation force are excessive. Separation can easily damage the GaAs substrate and leave excessive release layer residue, resulting in incomplete separation. Meanwhile, In... x Ga 1-x N y As 1-y When the semiconductor layer thickness is less than 5nm, the thickness of the release layer is too low, which will lead to incomplete separation of the GaAs substrate.

[0060] The laser lift-off method for GaAs substrates and the epitaxial structure of a vertical cavity laser emitter on a GaAs substrate are described in detail below with reference to some specific embodiments.

[0061] Example 1:

[0062] like Figure 1 As shown, one embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0063] Step 101: Provide a GaAs substrate 100 and grow a release layer 200 on the GaAs substrate 100.

[0064] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0065] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-ySemiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0066] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0067] Step 102: Grow a vertical cavity surface laser emitter epitaxial structure 300 on the stripping layer 200.

[0068] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0069] For example, the vertical-cavity surface mount laser (VCSEL) epitaxial structure 300 may include a first DBR layer, a light-emitting layer, an oxide confinement layer, and a second DBR layer sequentially formed on the lift-off layer 200, a first electrode electrically connected to the first DBR layer, and a second electrode electrically connected to the second DBR layer. A light-emitting hole is formed within the oxide confinement layer. The first DBR layer may be an n-type GaAs / AlGaAs DBR layer, and the second DBR layer may be a p-type GaAs / AlGaAs DBR layer; or the first DBR layer may be a p-type GaAs / AlGaAs DBR layer, and the second DBR layer may be an n-type GaAs / AlGaAs DBR layer.

[0070] Step 103: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0071] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0072] like Figure 2 As shown, Figure 2 A vertical-cavity surface mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the laser lift-off method described above. The VCSEL epitaxial structure on a GaAs substrate includes: a GaAs substrate 100, a lift-off layer 200 formed on the surface of the GaAs substrate 100, and a VCSEL epitaxial structure 300 formed on the side of the lift-off layer 200 opposite to the GaAs substrate 100.

[0073] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0074] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0075] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0076] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0077] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0078] For example, the vertical-cavity surface mount laser (VCSEL) epitaxial structure 300 may include a first DBR layer, a light-emitting layer, an oxide confinement layer, and a second DBR layer sequentially formed on the lift-off layer 200, a first electrode electrically connected to the first DBR layer, and a second electrode electrically connected to the second DBR layer. A light-emitting hole is formed within the oxide confinement layer. The first DBR layer may be an n-type GaAs / AlGaAs DBR layer, and the second DBR layer may be a p-type GaAs / AlGaAs DBR layer; or the first DBR layer may be a p-type GaAs / AlGaAs DBR layer, and the second DBR layer may be an n-type GaAs / AlGaAs DBR layer.

[0079] Example 2:

[0080] like Figure 3 As shown, the difference between this embodiment and Embodiment 1 is that, in this embodiment, the release layer 200 includes multiple N-doped semiconductor compound layers 201. The amount of N doping in the multiple N-doped semiconductor compound layers 201 can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer 201 can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300. It is understood that, when growing the release layer 200, the N-doped semiconductor compound layers 201 can be grown layer by layer.

[0081] Example 3:

[0082] like Figure 4 As shown, another embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0083] Step 111: Provide a GaAs substrate 100 and grow a buffer layer 400 on the GaAs substrate 100.

[0084] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0085] Step 112: Grow the release layer 200 on the buffer layer 400.

[0086] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0087] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0088] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0089] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0090] Step 113: Grow a vertical cavity surface laser emitter epitaxial structure 300 on the stripping layer 200.

[0091] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0092] Step 114: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0093] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0094] like Figure 5 As shown, Figure 5 A vertical-cavity surface mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the laser lift-off method described above. The VCSEL epitaxial structure on a GaAs substrate includes: a GaAs substrate 100, a buffer layer 400 formed on the surface of the GaAs substrate 100, a lift-off layer 200 formed on the side of the buffer layer 400 opposite to the GaAs substrate 100, and a VCSEL epitaxial structure 300 formed on the side of the lift-off layer 200 opposite to the buffer layer 400.

[0095] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0096] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0097] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0098] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0099] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0100] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0101] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0102] Example 4:

[0103] like Figure 6 As shown, another embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0104] Step 121: Provide a GaAs substrate 100 and grow a buffer layer 400 on the GaAs substrate 100.

[0105] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0106] Step 122: Grow the release layer 200 on the buffer layer 400.

[0107] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0108] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0109] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0110] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0111] Step 123: Grow a barrier layer 500 on the release layer 200.

[0112] The barrier layer 500 can protect the vertical-cavity surface-emitting laser epitaxial structure 300 located on the barrier layer 500 during the cleaning of residues after the GaAs substrate is separated by laser irradiation. For example, the material of the barrier layer 500 may include materials with good wet etching selectivity such as InGaP and GaAs and AlGaAs.

[0113] Step 124: Grow a vertical cavity surface laser emitter epitaxial structure 300 on the blocking layer 500.

[0114] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0115] Step 125: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0116] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0117] like Figure 7 As shown, Figure 7 A vertical-cavity surface mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the laser lift-off method described above. The VCSEL epitaxial structure on a GaAs substrate includes: a GaAs substrate 100, a buffer layer 400 formed on the surface of the GaAs substrate 100, a lift-off layer 200 formed on the side of the buffer layer 400 opposite to the GaAs substrate 100, a barrier layer 500 formed on the side of the lift-off layer 200 opposite to the buffer layer 400, and a VCSEL epitaxial structure 300 formed on the side of the barrier layer 500 opposite to the buffer layer 400.

[0118] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0119] The release layer 200 is an N-doped semiconductor compound layer. This N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand. Furthermore, the lattice of the N-doped semiconductor compound layer is matched to that of the GaAs substrate, and the bandgap of the N-doped semiconductor compound layer is smaller than that of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0120] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0121] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0122] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0123] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0124] The barrier layer 500 can protect the vertical-cavity surface-emitting laser epitaxial structure 300 located on the barrier layer 500 during the cleaning of residues after the GaAs substrate is separated by laser irradiation. For example, the material of the barrier layer 500 may include materials with good wet etching selectivity such as InGaP and GaAs and AlGaAs.

[0125] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0126] Example 5:

[0127] like Figure 8 As shown, another embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0128] Step 131: Provide a GaAs substrate 100 and grow a release layer 200 on the GaAs substrate 100.

[0129] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0130] For example, the N-doped semiconductor compound layer is In x Ga1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0131] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0132] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0133] Step 132: Grow a buffer layer 400 on the peeling layer 200.

[0134] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0135] Step 133: Grow the vertical cavity surface laser emitter epitaxial structure 300 on the buffer layer 400.

[0136] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0137] Step 134: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0138] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0139] like Figure 9 As shown, Figure 9 A vertical-cavity surface mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the laser lift-off method described above. The VCSEL epitaxial structure on the GaAs substrate includes: a GaAs substrate 100, a lift-off layer 200 formed on the surface of the GaAs substrate 100, a buffer layer 400 formed on the side of the lift-off layer 200 opposite to the GaAs substrate 100, and a VCSEL epitaxial structure 300 formed on the side of the buffer layer 400 opposite to the lift-off layer 200.

[0140] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0141] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0142] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0143] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0144] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0145] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0146] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0147] Example 6:

[0148] like Figure 10 As shown, another embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0149] Step 141: Provide a GaAs substrate 100 and grow a first buffer layer 400a on the GaAs substrate 100.

[0150] The first buffer layer 400a is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-mount laser emitter epitaxial structure 300. For example, the material of the first buffer layer 400a may include GaAs, AlGaAs, etc.

[0151] Step 142: Grow a release layer 200 on the first buffer layer 400a.

[0152] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0153] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0154] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0155] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0156] Step 143: Grow a second buffer layer 400b on the peeling layer 200.

[0157] The second buffer layer 400b is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown vertical cavity surface laser emitter epitaxial structure 300. Exemplarily, the material of the second buffer layer 400b may include GaAs, AlGaAs, etc.

[0158] Step 144: Grow the vertical cavity surface laser emitter epitaxial structure 300 on the second buffer layer 400b.

[0159] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0160] Step 145: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As1-y The bandgap width of the semiconductor layer.

[0161] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0162] like Figure 11 As shown, Figure 11 A vertical-cavity surface-mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the aforementioned laser lift-off method. The VCSEL epitaxial structure on a GaAs substrate includes: a GaAs substrate 100; a first buffer layer 400a formed on the surface of the GaAs substrate 100; a lift-off layer 200 formed on the side of the first buffer layer 400a opposite to the GaAs substrate 100; a second buffer layer 400b formed on the side of the lift-off layer 200 opposite to the first buffer layer 400a; and a VCSEL epitaxial structure 300 formed on the side of the second buffer layer 400b opposite to the lift-off layer 200.

[0163] Both the first buffer layer 400a and the second buffer layer 400b are used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical cavity surface mount laser epitaxial structure 300. For example, the materials of both the first buffer layer 400a and the second buffer layer 400b may include GaAs, AlGaAs, etc.

[0164] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0165] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0166] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0167] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands.0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0168] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0169] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0170] Example 7:

[0171] like Figure 12 As shown, another embodiment of the present invention provides a laser lift-off method for GaAs substrates, comprising:

[0172] Step 151: Provide a GaAs substrate 100, and alternately grow a buffer layer 400 and a release layer 200 on the GaAs substrate 100.

[0173] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0174] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The amount of N doping in the N-doped semiconductor compound layer can increase, decrease, or remain constant along the thickness direction of the GaAs substrate 100.

[0175] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x Ny As 1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0176] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0177] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0178] Step 152: Grow a vertical cavity surface laser emitter epitaxial structure 300 on the topmost stripping layer 200 or buffer layer 400.

[0179] The method for growing the vertical-cavity surface-mount laser emitter epitaxial structure 300 can employ existing growth techniques, and the etching and subsequent electrode formation can also utilize existing techniques. Since these are not innovative aspects of this invention, they will not be elaborated upon here. It is understood that the structure of the vertical-cavity surface-mount laser emitter epitaxial structure 300 can also be a structure found in existing technologies.

[0180] Step 153: A laser is used to penetrate the GaAs substrate 100 and irradiate the release layer 200, thereby decomposing the release layer 200 and separating the GaAs substrate 100 from the vertical-cavity surface-mount laser emitter epitaxial structure 300. In this step, the wavelength energy level of the laser irradiating the release layer 200 must be smaller than the bandgap of the GaAs substrate 100, and greater than In. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

[0181] For example, In 0.3 Ga 0.7 N 0.02As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated with a laser of a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0182] like Figure 13 As shown, Figure 13 A vertical-cavity surface mount laser (VCSEL) epitaxial structure on a GaAs substrate is provided, which can be peeled off from a GaAs substrate using the laser lift-off method described above. The VCSEL epitaxial structure on the GaAs substrate includes: a GaAs substrate 100, a VCSEL epitaxial structure 300, and a buffer layer 400 and a lift-off layer 200 alternately disposed between the GaAs substrate 100 and the VCSEL epitaxial structure 300.

[0183] The buffer layer 400 is used to improve the growth quality of layer structures on the GaAs substrate 100, such as the subsequently grown release layer 200 and the vertical-cavity surface-emitting laser epitaxial structure 300. For example, the material of the buffer layer 400 may include GaAs, AlGaAs, etc.

[0184] The release layer 200 is an N-doped semiconductor compound layer. The N-doped semiconductor compound layer can be grown using methods such as MOCVD or MBE. The N-doped semiconductor compound layer can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated during decomposition is less than or equal to the maximum impact force that the GaAs substrate can withstand, and the lattice of the N-doped semiconductor compound layer matches the GaAs substrate. Simultaneously, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. In this embodiment, the amount of N doping in the N-doped semiconductor compound layer increases, decreases, or remains constant in the thickness direction of the vertical-cavity surface-mount laser emitter epitaxial structure 300.

[0185] For example, the N-doped semiconductor compound layer is In x Ga 1-x N y As 1-y Semiconductor layer, where y < 6%, x < 0.5, In x Ga 1-x N y As1-y The thickness of the semiconductor layer is between 5 nm and 1000 nm. Preferably, In... x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

[0186] In x Ga 1-x N y As 1-y The semiconductor layer can not only control the impact force generated when it is decomposed by laser irradiation by controlling the content of N, but also adjust the bandwidth over a wide range by controlling the content of N. Moreover, the InGaNAs crystal material is exactly matched with the GaAs substrate 100 lattice. The doping of N causes the InGaNAs crystal material to decompose after absorbing a certain amount of laser light. Therefore, the InGaNAs crystal material is the preferred material for use as the release layer 200 in this embodiment.

[0187] For example, In 0.3 Ga 0.7 N 0.02 As 0.98 The lattice of this material matches the GaAs substrate, and In 0.3 Ga 0.7 N 0.02 As 0.98 The corresponding bandgap wavelength is around 1250 nm. The bandgap wavelength corresponding to the GaAs substrate is around 870 nm. Therefore, In can be irradiated using a laser with a wavelength between these two bands. 0.3 Ga 0.7 N 0.02 As 0.98 Laser lift-off is performed on the GaAs substrate.

[0188] The release layer 200 can also be a multilayer N-doped semiconductor compound layer. The amount of N doping in the multilayer N-doped semiconductor compound layer can be partially the same, all the same, or all different. The amount of N doping in each N-doped semiconductor compound layer can increase, decrease, or remain unchanged in the thickness direction of the vertical cavity surface laser emitter epitaxial structure 300.

[0189] The structure of the vertical-cavity surface mount laser emitter epitaxial structure 300 can be a structure found in the prior art. Since it is not an innovative point of this invention, it will not be elaborated upon here.

[0190] This invention discloses a laser lift-off method for GaAs substrates, using an InGaNAs semiconductor layer as the lift-off layer material, applicable in the laser field, capable of laser-driven lift-off of GaAs substrates. The method controls the N content of the InGaNAs semiconductor layer to ensure that, at the N content specified in this application, the InGaNAs semiconductor layer, acting as the lift-off layer for the GaAs substrate, decomposes under irradiation with a laser of a specific wavelength without generating impact forces exceeding the tolerance range of the GaAs substrate, thus achieving overall, damage-free lift-off of the GaAs substrate. Simultaneously, the method controls the In content of the InGaNAs semiconductor layer to match the lattice constant of the InGaNAs semiconductor layer with the lattice constant of the GaAs substrate. By adjusting the N and In content within the InGaNAs semiconductor layer, the N doping level is controlled to be below 4%, and the In doping level to be below 0.5%. Furthermore, it allows its bandgap to be smaller than the bandgap of a specific wavelength of laser that can penetrate the GaAs substrate, while remaining within the absorption range of most available lasers. This expands the selectivity of lasers for laser stripping of GaAs substrates and further improves the success rate of non-destructive laser stripping of GaAs substrates. Moreover, the InGaNAs semiconductor layer within this defined range not only matches the lattice of the GaAs substrate but also matches the lattice structure of the DBR layer of the subsequently grown vertical cavity surface laser emitter. The InGaNAs semiconductor layer can be epitaxially grown on the GaAs substrate and can also be epitaxially grown on the DBR layer of the vertical cavity surface laser emitter.

[0191] Compared with existing technologies, the laser lift-off method for GaAs substrates according to the embodiments of the present invention can reduce the impact force generated when the lift-off layer is irradiated by laser, thereby reducing the impact force borne by the GaAs substrate during lift-off, allowing the GaAs substrate to be detached as a whole, and reducing the risk of damage to the GaAs substrate. It eliminates the need for physical or physicochemical thinning processes, reducing the probability of physical damage and improving yield.

[0192] The laser lift-off method for GaAs substrates according to embodiments of the present invention uses In x Ga 1-x N y As 1-y Limiting the nitrogen (N) content in the semiconductor layer effectively controls the impact force generated during its decomposition, preventing excessive impact force from affecting GaAs and the epitaxial layer. Simultaneously, limiting the In content... x Ga 1-x N y As 1-y The range of x and y in the semiconductor layer makes In x Ga 1-x N y As 1-y The semiconductor layer can be adapted to the lattice of the GaAs substrate, facilitating In... x Ga1-x N y As 1-y Semiconductor layer growth can also enable In x Ga 1-x N y As 1-y The semiconductor layer can be largely absorbed and decomposed by lasers, which facilitates laser stripping of GaAs substrates.

[0193] The laser lift-off method for GaAs substrates according to the embodiments of the present invention greatly reduces the amount of waste liquid containing As and lowers the cost of waste disposal.

[0194] The laser lift-off method for GaAs substrates according to embodiments of the present invention allows for the recycling of the entire GaAs substrate, reducing costs.

[0195] The vertical cavity surface laser emitter epitaxial structure on a GaAs substrate according to the embodiments of the present invention can improve the yield of the epitaxial structure by non-destructively lifting the GaAs substrate with laser.

[0196] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A laser lift-off method for GaAs substrates, characterized in that, include: A release layer is grown on a GaAs substrate. The release layer includes at least one N-doped semiconductor compound layer, which can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can withstand. Furthermore, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The N-doped semiconductor compound layer includes In... x Ga 1-x N y As 1-y A semiconductor layer, wherein y < 6% and x < 0.5; A vertical cavity surface laser emitter epitaxial structure is grown on the stripping layer; Without the need for physical or chemical thinning of the GaAs substrate, a laser is directly used to penetrate the GaAs substrate and irradiate the release layer, thereby decomposing the release layer and separating the GaAs substrate from the vertical cavity surface laser emitter epitaxial structure. The wavelength energy level of the laser irradiating the release layer is smaller than the bandgap of the GaAs substrate and larger than that of the In substrate. x Ga 1-x N y As 1-y The bandgap width of the semiconductor layer.

2. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, The In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5nm and 1000nm.

3. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, The In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

4. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, The amount of nitrogen doping in the nitrogen-doped semiconductor compound layer may increase, decrease, or remain unchanged along the thickness direction of the vertical cavity surface laser emitter epitaxial structure.

5. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, The release layer comprises multiple N-doped semiconductor compound layers, wherein the amount of N doping in the multiple N-doped semiconductor compound layers is either different or the same.

6. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, Before growing the release layer on the GaAs substrate, a buffer layer is also grown on the GaAs substrate.

7. The laser lift-off method for GaAs substrates as described in claim 1 or 6, characterized in that, Before growing the vertical cavity surface laser emitter epitaxial structure on the release layer, a buffer layer is also grown on the release layer.

8. The laser lift-off method for GaAs substrates as described in claim 1 or 6, characterized in that, Before growing the vertical cavity surface laser emitter epitaxial structure on the release layer, a barrier layer is also grown on the release layer.

9. The laser lift-off method for GaAs substrates as described in claim 1, characterized in that, One or more buffer layers and one or more release layers are grown between the GaAs substrate and the vertical cavity laser emitter epitaxial structure. When multiple buffer layers and multiple release layers are grown, the buffer layers and the release layers are grown alternately.

10. An epitaxial structure for a vertical-cavity surface-emitting laser on a GaAs substrate, characterized in that, include: GaAs substrate; A release layer is formed on the surface of the GaAs substrate. The release layer includes at least one N-doped semiconductor compound layer, which can be decomposed by laser irradiation. The N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can withstand. Furthermore, the bandgap of the N-doped semiconductor compound layer is smaller than the bandgap of the GaAs substrate. The N-doped semiconductor compound layer includes In... x Ga 1-x N y As 1-y A semiconductor layer, wherein y < 6% and x < 0.5; A vertical cavity surface laser emitter epitaxial structure is formed on the side of the release layer opposite to the GaAs substrate; Wherein, when the wavelength energy level is smaller than the bandgap of the GaAs substrate and larger than the In x Ga 1-x N y As 1-y When a laser with a bandgap width of the semiconductor layer penetrates the GaAs substrate and irradiates the release layer, it can decompose the release layer to separate the GaAs substrate from the vertical cavity laser emitter epitaxial structure without the need for physical or chemical thinning of the GaAs substrate.

11. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, The In x Ga 1-x N y As 1-y The thickness of the semiconductor layer is between 5nm and 1000nm.

12. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, The In x Ga 1-x N y As 1-y In the semiconductor layer, x < 0.5 and y < 4%.

13. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, The release layer comprises multiple N-doped semiconductor compound layers, wherein the amount of N doping in the multiple N-doped semiconductor compound layers is either different or the same.

14. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, The release layer comprises multiple N-doped semiconductor compound layers, with a buffer layer disposed between adjacent N-doped semiconductor compound layers.

15. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, The amount of nitrogen doping in the nitrogen-doped semiconductor compound layer may increase, decrease, or remain unchanged along the thickness direction of the vertical cavity surface laser emitter epitaxial structure.

16. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, A buffer layer is further provided between the GaAs substrate and the release layer and / or between the release layer and the vertical cavity laser emitter epitaxial structure.

17. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, A barrier layer is also provided between the epitaxial structure of the vertical cavity surface laser emitter and the stripping layer.

18. The vertical-cavity surface-mount laser emitter epitaxial structure on a GaAs substrate as described in claim 10, characterized in that, One or more buffer layers and one or more release layers are disposed between the epitaxial structure of the vertical cavity laser emitter and the GaAs substrate. When growing multiple buffer layers and multiple release layers, the buffer layers and the release layers are alternately disposed.

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