Laser lift-off method of gaas substrate and epitaxial structure

By growing N-doped semiconductor compound layers, particularly InxGa1-xNyAs1-y semiconductor layers, on GaAs substrates and controlling the N content and thickness to achieve non-destructive laser lift-off, the problems of damage and waste liquid during the GaAs substrate lift-off process are solved, thereby improving the yield of VCSEL devices and reducing costs.

CN116014551BActive Publication Date: 2026-07-24SUZHOU LEKIN SEMICON CO LTD
2 Cites 0 Cited by

Patent Information

Application Number
CN202310211916.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-07
Publication Date
2026-07-24
Estimated Expiration
2043-03-07

AI Technical Summary

Technical Problem

Existing methods for lifting GaAs substrates can easily damage VCSEL devices and generate large amounts of waste liquid, affecting yield and increasing costs. Furthermore, conventional laser lift-off layers are difficult to grow with high quality on GaAs substrates.

Method used

A nitrogen-doped semiconductor compound layer, particularly an InxGa1-xNyAs1-y semiconductor layer, is used as the release layer. The nitrogen content and thickness are controlled to control the impact force during laser release, ensuring that it is less than the withstand capability of the GaAs substrate. Non-destructive release is achieved by laser decomposition of the release layer.

Benefits of technology

It reduces the risk of damage to GaAs substrates during the stripping process, reduces the amount of waste liquid, improves yield and reduces processing costs, and is suitable for industrial applications.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The application discloses a laser stripping method of a GaAs substrate and an epitaxial structure. The laser stripping method comprises the following steps: growing a stripping layer on the GaAs substrate, wherein the stripping layer comprises at least one layer of N-doped semiconductor compound layer, the N-doped semiconductor compound layer can be decomposed by laser irradiation, the N content in the N-doped semiconductor compound layer is adjusted so that the impact force generated when the N-doped semiconductor compound layer is decomposed is less than or equal to the maximum impact force that the GaAs substrate can bear, and the band gap of the N-doped semiconductor compound layer is less than the band gap of the GaAs substrate, the N-doped semiconductor compound layer comprises In x Ga 1‑x N y As 1‑y semiconductor layer, wherein y is less than 6%; growing a vertical cavity surface emitting laser epitaxial structure on the stripping layer; and penetrating the GaAs substrate with laser and irradiating the stripping layer to decompose the stripping layer, so as to separate the GaAs substrate and the vertical cavity surface emitting laser epitaxial structure. The laser stripping method can reduce the impact force generated when the stripping layer is irradiated by laser, and the GaAs substrate can be separated as a whole and is not easy to be damaged.
Need to check novelty before this filing date? Find Prior Art