Vertical structure light emitting diode, preparation method thereof and LED display panel

Abstract

The application provides a vertical structure light emitting diode, a preparation method thereof and an LED display panel. The method comprises the following steps: forming a metal atom layer on a substrate, wherein the substrate is an n-type substrate; forming an n-type buffer layer on the metal atom layer; forming a light emitting structure on the n-type buffer layer, wherein the light emitting structure comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer from bottom to top; arranging a p-electrode on the light emitting structure; and arranging an n-electrode on the side of the substrate away from the metal atom layer. By adopting the n-type substrate with conductivity, and sequentially forming the metal atom layer and the n-type buffer layer thereon, the conductivity of the device with the vertical structure can be ensured, without peeling and bonding, so that the preparation steps are reduced, the preparation cost of the vertical structure light emitting diode is effectively saved, and the preparation efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of light-emitting diode technology, specifically to a vertical structure light-emitting diode and its fabrication method, and an LED display panel. Background Technology

[0002] Compared with traditional planar light-emitting diodes, vertical light-emitting diodes (LEDs) have significant advantages in terms of light emission efficiency and heat dissipation speed.

[0003] However, the fabrication method of vertical LEDs is extremely complex in existing technologies. After forming the light-emitting structure, it is usually necessary to peel off the substrate used to grow the epitaxial layer and then bond the epitaxial layer to a new substrate with high conductivity. This complex fabrication process directly leads to difficulties in improving the production efficiency of vertical LEDs. In addition, the peeling process has various problems that seriously affect the fabrication cost and yield of LEDs. For example, laser peeling (mainly used for sapphire substrates) is expensive, while chemical etching peeling (mainly used for silicon substrates) results in poor efficiency and yield, and the peeled substrate cannot be reused. Summary of the Invention

[0004] The main reason for using the above-mentioned complex preparation method in the prior art is that the substrate in the prior art does not have good conductivity, and if it is not stripped, it will seriously affect the power of the device.

[0005] To overcome the aforementioned technical problems, researchers have been exploring ways to improve the stripping process, increase stripping efficiency, reduce costs, and minimize the impact on devices. However, these methods are limited to the stripping process and cannot fundamentally improve the production efficiency of vertical LEDs.

[0006] In view of this, this application aims to provide a fabrication method for vertical structure light-emitting diodes that does not require peeling and bonding. The method includes: forming a metal atomic layer on a substrate, wherein the substrate is an n-type substrate; forming an n-type buffer layer on the metal atomic layer; forming a light-emitting structure on the n-type buffer layer, the light-emitting structure including, from bottom to top, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; disposing a p-electrode on the light-emitting structure; and disposing an n-electrode on the side of the substrate away from the metal atomic layer.

[0007] In one embodiment, the metal atomic layer is an Al atomic layer.

[0008] In one embodiment, forming a metal atom layer on a substrate includes: forming a metal atom layer with a patterned structure on the substrate, the patterned structure including continuous patterns and discontinuous patterns.

[0009] In one embodiment, forming a metal atomic layer with a patterned structure on a substrate includes: patterning the upper surface of the substrate; and forming a metal atomic layer on the upper surface of the substrate with the patterned structure, so that the metal atomic layer has a patterned structure.

[0010] In one embodiment, a layer of metal atoms is partially formed on the substrate.

[0011] In one embodiment, the metal atom layer is partially formed on a substrate, including: patterning the upper surface of the substrate; and forming a metal atom layer on a portion of the upper surface of the substrate having the patterned structure.

[0012] In one embodiment, before setting the n-electrode on the side of the substrate away from the metal atomic layer, the method further includes: thinning the substrate on the side of the substrate away from the metal atomic layer.

[0013] In one embodiment, the thinning process includes etching and / or polishing.

[0014] In one embodiment, the substrate has at least one deep trench for dividing the substrate into multiple pre-discrete structures; the thinning process makes the thickness of the thinned substrate less than or equal to the depth of the deep trench, so as to separate the multiple pre-discrete structures into multiple independent light-emitting units.

[0015] In one embodiment, at least one deep groove is filled with insulating material.

[0016] In one embodiment, an n-electrode is disposed on the side of the substrate away from the metal atom layer, including: disposing an n-electrode on the side of each of the plurality of light-emitting units away from the metal atom layer.

[0017] This application also provides a vertical structure light-emitting diode (LED) fabricated using the above-described method. The vertical structure LED includes: a substrate, which is an n-type substrate; a metal atom layer formed on the substrate; an n-type buffer layer formed on the metal atom layer; a light-emitting structure formed on the n-type buffer layer, wherein the light-emitting structure, from bottom to top, includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; a p-electrode disposed on the light-emitting structure; and an n-electrode disposed on the side of the substrate away from the metal atom layer.

[0018] In one embodiment, the metal atomic layer is an Al atomic layer.

[0019] In one embodiment, the metal atomic layer has a patterned structure, which includes continuous patterns and discontinuous patterns.

[0020] In one embodiment, the upper surface of the substrate has a patterned structure corresponding to a layer of metal atoms.

[0021] In one embodiment, the materials of the n-type semiconductor layer and the p-type semiconductor layer are group III nitrides.

[0022] In one embodiment, the horizontal width of the vertical structure light-emitting diode is less than 500 μm.

[0023] In one embodiment, the horizontal width of the vertical structure light-emitting diode is less than 100 μm.

[0024] Furthermore, this application also provides an LED display panel, including the vertically structured light-emitting diodes provided in any of the above embodiments.

[0025] Based on the vertical structure light-emitting diode and its fabrication method provided in this application, by using a conductive n-type substrate and sequentially forming a metal atom layer and an n-type buffer layer on it, the conductivity of the vertical structure device can be ensured. This eliminates the need for peeling and bonding after the formation of the layer structure, reducing fabrication steps, effectively saving fabrication costs and improving fabrication efficiency for the vertical structure light-emitting diode. Furthermore, by setting a metal atom layer, which can also have a patterned structure, the process flow for the vertical structure light-emitting diode is simplified while effectively improving the luminous efficiency of the vertical structure light-emitting diode. Attached Figure Description

[0026] Figure 1 The diagram shown is a flowchart illustrating a method for fabricating a vertical structure light-emitting diode according to an embodiment of this application.

[0027] Figure 2 The diagram shown is a flowchart illustrating a method for fabricating a vertical structure light-emitting diode according to another embodiment of this application.

[0028] Figures 3A-3F This is an exemplary process diagram illustrating the fabrication method of the vertical structure light-emitting diode provided in this application.

[0029] Figure 4 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in an embodiment of this application.

[0030] Figure 5 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in another embodiment of this application.

[0031] Figure 6 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in another embodiment of this application.

[0032] Figure 7 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in another embodiment of this application.

[0033] Figure 8 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in another embodiment of this application.

[0034] Figure 9 The diagram shown is a schematic diagram of the structure of a vertical light-emitting diode provided in another embodiment of this application. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0036] Figure 1 The diagram shown is a schematic flowchart of a method for fabricating a vertical structure light-emitting diode according to an embodiment of this application. Figure 1 As shown, the method includes:

[0037] S110: Forming a metal atomic layer on a substrate, wherein the substrate is an n-type substrate. Because n-type substrates have good electrical and thermal conductivity, in the embodiments of this application, by using an n-type substrate, an epitaxial layer can be directly grown on the substrate and an n-electrode can be directly disposed on the back side of the substrate, thus eliminating the need to peel off the substrate, simplifying the fabrication method, and saving fabrication costs.

[0038] Because metals are opaque, the metal atomic layer located below the light-emitting structure can reflect the light emitted by the light-emitting structure, thereby effectively increasing the light-emitting efficiency of the vertical structure light-emitting diode. At the same time, because the substrate has a strong light absorption effect, by setting a metal atomic layer on it, the adverse effects of the substrate on the light-emitting effect of the vertical structure light-emitting diode can be effectively prevented.

[0039] Specifically, such as Figure 4 As shown, in one embodiment, the metal atom layer can be a single, flat layer.

[0040] In another embodiment, the metal atomic layer may have a patterned structure. A patterned metal atomic layer can reflect light emitted by the light-emitting structure in more directions, thereby further improving the luminous efficiency of the vertical structure light-emitting diode.

[0041] Specifically, the patterned structure of metal atomic layers can be achieved in a variety of ways.

[0042] For example, such as Figure 5 As shown, after forming a metal atomic layer, its surface can be patterned to obtain a metal atomic layer with a continuous patterned structure.

[0043] For example, such as Figure 6 As shown, the metal atomic layer is patterned to obtain a metal atomic layer with a discontinuous patterned structure.

[0044] For example, such as Figure 7 As shown, before forming the metal atomic layer, the upper surface of the substrate can be patterned first, and then a uniform metal atomic layer can be formed on the upper surface of the patterned substrate. In this way, the metal atomic layer will have a patterned structure corresponding to the patterned structure on the substrate.

[0045] For example, such as Figure 8 As shown, before forming the metal atomic layer, the upper surface of the substrate can be patterned, and the metal atomic layer can be formed only between the recessed areas on the patterned structure of the substrate, thereby obtaining a discontinuous metal atomic layer corresponding to the patterned structure on the substrate.

[0046] For example, such as Figure 9 As shown, before forming the metal atomic layer, the upper surface of the substrate can be patterned, and the metal atomic layer can be formed only in the recessed areas of the patterned structure on the substrate, thereby obtaining a discontinuous metal atomic layer corresponding to the patterned structure on the substrate.

[0047] Compared to directly patterning the metal atomic layer, patterning the substrate is easier and yields better results. Therefore, the method in this embodiment can more easily achieve the patterning of the metal atomic layer while improving the product quality of the device.

[0048] It should be understood that the embodiments of this application do not limit the method for making the metal atomic layer have a patterned structure, and those skilled in the art can choose according to actual needs.

[0049] Furthermore, in one embodiment, the metal atomic layer can be an Al atomic layer. Since Al and Ga are in the same group, preparing a group III nitride buffer layer on an Al atomic layer allows for better growth of the buffer layer and improves its quality.

[0050] S120: An n-type buffer layer is formed on a metal atomic layer.

[0051] Specifically, the material for the n-type buffer layer can be a group III nitride, such as gallium nitride or aluminum gallium nitride.

[0052] Here, the buffer layer can greatly alleviate the stress that occurs when the epitaxial layer is grown on the substrate and achieve dislocation filtering, thereby improving the crystal quality of the epitaxial layer.

[0053] S130: A light-emitting structure is formed on the n-type buffer layer. From bottom to top, the light-emitting structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer can be composed of group III nitrides, such as gallium nitride (GaN) or aluminum gallium nitride (AlGaN); the p-type semiconductor layer can also be composed of group III nitrides, such as gallium nitride (GaN) or aluminum gallium nitride (AlGaN). Electrons from the n-type semiconductor layer and holes from the p-type semiconductor layer recombine in the active layer, releasing energy and thus achieving light emission.

[0054] In one embodiment, the active layer may be a multi-quantum well (MQW) layer.

[0055] S140: A p electrode is provided on the light-emitting structure.

[0056] S150: An n-electrode is disposed on the side of the substrate away from the metal atomic layer.

[0057] Based on the fabrication method of the vertical structure light-emitting diode provided in this application embodiment, by using a conductive n-type substrate and sequentially forming a metal atom layer and an n-type buffer layer thereon, the conductivity of the device with the vertical structure can be ensured. There is no need for peeling and bonding after forming the layer structure, which reduces the fabrication steps, effectively saves the fabrication cost of the vertical structure light-emitting diode and improves the fabrication efficiency. In addition, by setting the metal atom layer, and the metal atom layer can also have a patterned structure, the process flow of the vertical light-emitting diode structure can be simplified while effectively improving the light-enhancing efficiency of the vertical structure light-emitting diode.

[0058] Alternatively, in another embodiment, Figure 1 The method shown may further include, prior to S150, thinning the substrate on the side of the substrate away from the metal atomic layer.

[0059] The thinning process can include one or more methods such as etching and polishing. By thinning the substrate, the resistance of the substrate can be further reduced, the conductivity of the overall layer structure can be improved, and thus the luminous efficiency of the vertical structure light-emitting diode can be improved.

[0060] Figure 2 The diagram shown is a flowchart illustrating a method for fabricating a vertical structure light-emitting diode according to another embodiment of this application. Figures 3A-3F This is an exemplary process diagram illustrating the fabrication method of the vertical structure light-emitting diode provided in this application. Figure 2 and Figures 3A-3F As shown, the method includes the following:

[0061] S210: A layer of metal atoms is formed on a substrate having at least one deep trench.

[0062] Specifically, such as Figure 3A As shown, in one embodiment, the substrate 310 may have at least one deep trench 10 for dividing the substrate 310 into multiple pre-discrete structures. Metal atomic layers are formed on this substrate with the deep trench 10, that is, metal atomic layers are formed on each of the multiple pre-discrete structures of the substrate.

[0063] Preferably, such as Figures 3B-3C As shown, in one embodiment, before forming the metal atomic layer, the upper surface of the substrate 310 can be patterned first, and then a uniform metal atomic layer 350 can be formed on the upper surface of the substrate 310 with the patterned structure, so that the metal atomic layer 350 directly has a patterned structure corresponding to the patterned structure on the substrate 310.

[0064] S220: An n-type buffer layer is formed on a metal atomic layer.

[0065] S230: A light-emitting structure is formed on an n-type buffer layer.

[0066] S240: A p electrode is provided on the light-emitting structure.

[0067] like Figure 3D As shown, in one embodiment, an n-type buffer layer 360, a light-emitting structure 320, and a p-electrode 340 can be sequentially formed on the metal atom layer 350.

[0068] S250: The substrate is thinned on the side away from the metal atomic layer so that the thickness of the thinned substrate is less than or equal to the depth of the deep trench, thereby separating multiple pre-discrete structures into multiple independent light-emitting units.

[0069] like Figure 3E As shown, by thinning the substrate 310 from below, multiple independent light-emitting units can be directly obtained, avoiding steps such as cutting and improving device quality.

[0070] Specifically, when thinning a substrate with deep trenches, if the thinned thickness is greater than or equal to the distance between the bottom of the trench and the bottom of the substrate (i.e., the thickness of the thinned substrate is less than or equal to the depth of the trench), then the bottom of the trench can be removed. In other words, the connecting portions between the multiple pre-discrete structures separated by the trench are removed. This completely separates the multiple pre-discrete structures, forming multiple independent discrete structures (i.e., multiple light-emitting units).

[0071] Preferably, in one embodiment, the depth of at least one deep trench is greater than half the substrate thickness. This allows for easier separation of the multiple pre-discrete structures into multiple independent discrete structures during subsequent thinning processes.

[0072] Preferably, in another embodiment, when at least one deep groove comprises multiple deep grooves, all deep grooves have the same depth. This allows for the simultaneous separation of all pre-discrete structures during subsequent thinning processes, simplifying the fabrication process.

[0073] Furthermore, in another embodiment, at least one deep trench on the substrate 310 may be filled with an insulating material, such as silicon dioxide or silicon nitride. By placing an insulating material in the deep trench, better isolation can be achieved, subsequent processes are easier to implement, and the final discrete device has better quality.

[0074] S260: An n-electrode is provided on the side of each of the multiple light-emitting units away from the metal atom layer.

[0075] like Figure 3F As shown, after obtaining multiple independent light-emitting units, an n-electrode 330 can be set below each light-emitting unit to obtain a complete discrete device.

[0076] Based on the fabrication method of the vertical structure light-emitting diode provided in the embodiments of this application, by using a substrate with deep trenches, the vertical structure is fabricated on multiple pre-discrete structures separated by the deep trenches, thereby enabling multiple discrete devices to be obtained only through thinning process, avoiding the cutting step, reducing damage to the devices, and thus improving the quality of the vertical structure light-emitting diode.

[0077] It should be understood that Figure 2 Some steps in the method of the illustrated embodiment are similar to Figure 1 The method shown is the same, and its details and effects will not be elaborated here.

[0078] Figure 4 The diagram shown is a schematic representation of a vertical structure light-emitting diode (LED) according to an embodiment of this application. This vertical structure LED can... Figure 1 The preparation method shown is used to obtain it. Figure 4 As shown, the vertical structure light-emitting diode includes: a substrate 410, which is an n-type substrate; a metal atom layer 450 formed on the substrate 410; an n-type buffer layer 460 formed on the metal atom layer 450; a light-emitting structure 420 formed on the n-type buffer layer 460, wherein the light-emitting structure 420 includes, from bottom to top, an n-type semiconductor layer 421, an active layer 422, and a p-type semiconductor layer 423; a p-electrode 440 disposed on the light-emitting structure 420; and an n-electrode 430 disposed on the side of the substrate away from the metal atom layer.

[0079] Preferably, in one embodiment, the metal atomic layer 450 is an Al atomic layer.

[0080] Figure 5The diagram shown is a schematic representation of a vertical structure light-emitting diode (LED) according to another embodiment of this application. The vertical structure LED includes: a substrate 510, which is an n-type substrate; a metal atom layer 550 formed on the substrate 510, the metal atom layer 550 having a continuous patterned structure; an n-type buffer layer 560 formed on the metal atom layer 550; a light-emitting structure 520 formed on the n-type buffer layer 560, wherein the light-emitting structure 520 includes, from bottom to top, an n-type semiconductor layer 521, an active layer 522, and a p-type semiconductor layer 523; a p-electrode 540 disposed on the light-emitting structure 520; and an n-electrode 530 disposed on the side of the substrate away from the metal atom layer.

[0081] Figure 6 The diagram shown is a schematic representation of a vertical structure light-emitting diode (LED) according to another embodiment of this application. The vertical structure LED includes: a substrate 610, which is an n-type substrate; a metal atom layer 650 formed on the substrate 610, the metal atom layer 650 having a discontinuous patterned structure; an n-type buffer layer 660 formed on the metal atom layer 650; a light-emitting structure 620 formed on the n-type buffer layer 660, wherein the light-emitting structure 620 includes, from bottom to top, an n-type semiconductor layer 621, an active layer 622, and a p-type semiconductor layer 623; a p-electrode 640 disposed on the light-emitting structure 620; and an n-electrode 630 disposed on the side of the substrate away from the metal atom layer.

[0082] Figure 7 The diagram shown is a schematic representation of a vertical structure light-emitting diode (LED) according to another embodiment of this application. The vertical structure LED includes: a substrate 710, which is an n-type substrate, and its upper surface has a patterned structure; a metal atom layer 750 formed on the substrate 710, the metal atom layer 750 having a patterned structure corresponding to the substrate 710; an n-type buffer layer 760 formed on the metal atom layer 750; a light-emitting structure 720 formed on the n-type buffer layer 760, wherein the light-emitting structure 720 includes, from bottom to top, an n-type semiconductor layer 721, an active layer 722, and a p-type semiconductor layer 723; a p-electrode 740 disposed on the light-emitting structure 720; and an n-electrode 730 disposed on the side of the substrate away from the metal atom layer.

[0083] By giving the metal atomic layer 750 a patterned structure corresponding to the upper surface of the substrate and the substrate 710, the metal atomic layer can be made more uniform and the patterned structure more stable, thereby improving the light-emitting efficiency of the vertical structure light-emitting diode.

[0084] Figure 8The diagram shown is a schematic representation of a vertical structure light-emitting diode provided in another embodiment of this application. The vertical structure light-emitting diode includes: a substrate 810, which is an n-type substrate, and the upper surface of the substrate 810 has a patterned structure; a metal atomic layer 850 formed between recessed regions on the patterned structure of the substrate 810; an n-type buffer layer 860 formed on the metal atomic layer 850; a light-emitting structure 820 formed on the n-type buffer layer 860, wherein the light-emitting structure 820 includes, from bottom to top, an n-type semiconductor layer 821, an active layer 822, and a p-type semiconductor layer 823; a p-electrode 840 disposed on the light-emitting structure 820; and an n-electrode 830 disposed on the side of the substrate away from the metal atomic layer.

[0085] In other words, Figure 8 In the illustrated embodiment, the metal atom layer 850 is partially formed on the substrate 810. Specifically, the metal atom layer 850 can be formed on the raised regions between the recessed regions in the patterned structure on the upper surface of the substrate 810, while the metal atom layer 850 is not disposed in the recessed regions.

[0086] Figure 9 The diagram shown is a schematic representation of a vertical structure light-emitting diode provided in another embodiment of this application. The vertical structure light-emitting diode includes: a substrate 910, which is an n-type substrate, and the upper surface of the substrate 910 has a patterned structure; a metal atom layer 950 formed in a recessed region on the patterned structure of the substrate 910; an n-type buffer layer 960 formed on the metal atom layer 950; a light-emitting structure 920 formed on the n-type buffer layer 960, wherein the light-emitting structure 920 includes, from bottom to top, an n-type semiconductor layer 921, an active layer 922, and a p-type semiconductor layer 923; a p-electrode 940 disposed on the light-emitting structure 920; and an n-electrode 930 disposed on the side of the substrate away from the metal atom layer.

[0087] In other words, Figure 9 In the illustrated embodiment, the metal atom layer 950 is partially formed on the substrate 910. Specifically, the metal atom layer 950 can be formed in the recessed regions of the patterned structure on the upper surface of the substrate 910, while the metal atom layer 950 is not disposed on the raised regions between the recessed regions.

[0088] Based on the vertical structure light-emitting diode provided in this application embodiment, by using a conductive n-type substrate and including a metal atom layer and an n-type buffer layer sequentially formed on the n-type substrate, the conductivity of the device can be ensured. This device does not require replacement of the substrate after forming the layer structure, that is, its substrate is the substrate used to grow the epitaxial layer. Therefore, the manufacturing cost is low, the manufacturing efficiency is high, and the device quality is better. In addition, since the substrate is provided with a metal atom layer, and the metal atom layer can also have a patterned structure, while ensuring a simplified process flow for the vertical structure light-emitting diode, the luminous efficiency of the vertical structure light-emitting diode can also be effectively improved.

[0089] It should be understood that Figures 4-9 The structural embodiments shown are similar to Figure 1 The method embodiments shown correspond to each other, and the details and effects therein will not be repeated here.

[0090] In one embodiment of this application, an LED display panel is also provided, comprising the above-mentioned... Figures 4-8 The vertical structure light-emitting diode shown in any of the embodiments.

[0091] It should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "set up", "form", "possess", etc. should be interpreted broadly, and those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0092] It should also be noted that the terms "upper", "lower", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the invention is usually placed when in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0093] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications or equivalent substitutions made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for fabricating a vertically oriented light-emitting diode, characterized in that, include: A metal atomic layer is formed on a substrate, wherein the substrate is an n-type substrate, the metal atomic layer is an Al atomic layer, and the metal atomic layer has a patterned structure, the patterned structure including a continuous pattern; the metal atomic layer has a patterned structure corresponding to the upper surface of the substrate; An n-type buffer layer is formed on the metal atomic layer, wherein the material of the n-type buffer layer is a group III nitride. A light-emitting structure is formed on the n-type buffer layer, and the light-emitting structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer from bottom to top; A p-electrode is disposed on the light-emitting structure; An n-electrode is disposed on the side of the substrate away from the metal atomic layer.

2. The preparation method according to claim 1, characterized in that, The formation of a metal atomic layer on the substrate includes: A layer of metal atoms with a patterned structure is formed on the substrate, the patterned structure including continuous patterns and discontinuous patterns.

3. The preparation method according to claim 2, characterized in that, Forming the metal atom layer with a patterned structure on the substrate includes: The upper surface of the substrate is patterned; The metal atomic layer is formed on the upper surface of the substrate having a patterned structure, so that the metal atomic layer has the patterned structure.

4. The preparation method according to any one of claims 1 to 3, characterized in that, Before placing the n-electrode on the side of the substrate away from the metal atomic layer, the fabrication method further includes: The substrate is thinned on the side of the substrate away from the metal atomic layer.

5. The preparation method according to claim 4, characterized in that, The substrate has at least one deep trench for dividing the substrate into multiple pre-discrete structures; The thinning process makes the thickness of the thinned substrate less than or equal to the depth of the deep trench, so as to separate the multiple pre-discrete structures into multiple independent light-emitting units.

6. The preparation method according to claim 5, characterized in that, An n-electrode is disposed on the side of the substrate away from the metal atomic layer, comprising: The n-electrode is disposed on the side of each of the plurality of light-emitting units away from the metal atomic layer.

7. A vertically oriented light-emitting diode, characterized in that, include: Substrate, wherein the substrate is an n-type substrate; A metal atomic layer is formed on the substrate, the metal atomic layer having a patterned structure, the metal atomic layer being an Al atomic layer, and the patterned structure including a continuous pattern; the metal atomic layer has a patterned structure corresponding to the upper surface of the substrate; An n-type buffer layer is formed on the metal atomic layer, and the material of the n-type buffer layer is a group III nitride. A light-emitting structure formed on the n-type buffer layer, wherein the light-emitting structure comprises, from bottom to top, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; The p electrode disposed on the light-emitting structure; and An n-electrode is disposed on the side of the substrate away from the metal atomic layer.

8. The vertical structure light-emitting diode according to claim 7, characterized in that, The metal atomic layer has a patterned structure, which includes continuous patterns and discontinuous patterns.

9. The vertical structure light-emitting diode according to claim 8, characterized in that: The upper surface of the substrate has a patterned structure corresponding to the metal atomic layer.

10. The vertical structure light-emitting diode according to claim 7, characterized in that: The width of the vertical structure light-emitting diode in the horizontal direction is less than 500μm.

11. An LED display panel, characterized in that, Includes the vertical structure light-emitting diode as described in any one of claims 7 to 10.

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