Electronic device coating with multilayer interference film

Abstract

The present disclosure relates to electronic device coatings having a multilayer interference film. An electronic device can be provided with a conductive structure, such as a conductive housing structure. A visible light reflecting coating can be formed on the conductive structure. The coating can have an adhesion and transition layer, and a multilayer thin film interference filter on the adhesion and transition layer. The multilayer thin film interference filter can have an uppermost SiCrN layer, a lowermost TiN layer, and a set of SiN layers interleaved with a set of SiH layers. The coating can exhibit an orange, yellow, or red color that has a relatively uniform visual response at different viewing angles, even when the underlying conductive structure has a three-dimensional shape.

Description

[0001] This application claims priority to U.S. Patent Application No. 18 / 156,905, filed January 19, 2023, and U.S. Provisional Patent Application No. 63 / 305,533, filed February 1, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates in general to coatings for electronic device structures, and more specifically, to visible light reflective coatings for conductive electronic device structures. Background Technology

[0003] Electronic devices such as cellular phones, computers, watches, and other devices contain conductive structures, such as conductive housing structures. These conductive structures are coated with a material that reflects light of a specific wavelength, causing the conductive components to exhibit a desired visible color.

[0004] Providing coatings with desired color brightness can be challenging. Furthermore, if not handled carefully, coatings can exhibit unsatisfactory optical performance under different operating environments and conductive structure geometries. Summary of the Invention

[0005] An electronic device may include a conductive structure, such as a conductive housing structure. A visible light reflective coating may be formed on the conductive structure. The coating may have an adhesion and transition layer, and a multilayer thin-film interference filter on the adhesion and transition layer. The multilayer thin-film interference filter may have an uppermost SiCrN layer, a lowermost TiN layer, and a set of SiN layers interleaved with a set of SiH layers. The coating may be orange, yellow, or red, and the color has a relatively uniform visual response at different viewing angles, even when the underlying conductive structure has a three-dimensional shape.

[0006] One aspect of this disclosure provides an apparatus. The apparatus may include a conductive substrate. The apparatus may include a colored coating on the conductive substrate. The coating may include an adhesion and transition layer. The coating may include a thin-film interference filter on the adhesion and transition layer, wherein the thin-film interference filter includes an uppermost SiCrN layer forming the thin-film interference filter, a lowermost TiN layer forming the thin-film interference filter, a set of SiH layers, and a set of SiN layers interleaved with the set of SiH layers.

[0007] Another aspect of this disclosure provides an apparatus. The apparatus may include a conductive substrate. The apparatus may include a colored coating on the conductive substrate. The coating may include an adhesion and transition layer. The coating may include a TiN layer on the adhesion and transition layer. The coating may include a first SiH layer and a second SiH layer. The coating may include a first SiN layer and a second SiN layer, wherein the first SiH layer is inserted between the first SiN layer and the second SiN layer, and wherein the first SiN layer is inserted between the first SiH layer and the TiN layer. The coating may include a SiCrN layer, wherein the second SiH layer is inserted between the SiCrN layer and the second SiN layer.

[0008] Another aspect of this disclosure provides an electronic device. The electronic device may include a conductive structure. The electronic device may include a colored coating on the conductive structure. The coating may include an adhesion and transition layer. The coating may include a first layer comprising titanium and nitrogen on the adhesion and transition layer. The coating may include a second layer comprising silicon and nitrogen. The coating may include a third layer comprising silicon and hydrogen. The coating may include a fourth layer comprising silicon and nitrogen. The coating may include a fifth layer comprising silicon and hydrogen. The coating may include a sixth layer comprising silicon, chromium, and nitrogen. Attached Figure Description

[0009] Figure 1 It is a perspective view of an exemplary electronic device of a type that may be provided with conductive structures and visible light reflective coatings according to some implementation schemes.

[0010] Figure 2 It is a cross-sectional side view of an exemplary electronic device having a conductive structure that may be provided with a visible light reflective coating, according to some embodiments.

[0011] Figure 3 This is a cross-sectional side view of an exemplary visible light reflective coating with multiple interference films according to some embodiments.

[0012] Figure 4 This is a cross-sectional side view of an exemplary visible light reflective coating having six interference films according to some embodiments, the interference films having an uppermost SiCrN layer, alternating SiH and SiN layers, and a TiN layer on an underlying adhesion and transition layer.

[0013] Figure 5 It is based on some implementation schemes that present an orange hue and has Figure 4 The graphs show the reflectance of three exemplary coatings of the type shown as a function of wavelength.

[0014] Figure 6This is a graph of the a*b* color space based on some implementation schemes, which shows... Figure 4 The illustrated coating of the type shown exhibits an orange hue at different incident angles.

[0015] Figure 7 It is based on some implementation schemes that present a red or orange hue and has Figure 4 The graphs show the reflectance of four other illustrative coatings of the type shown, varying with wavelength.

[0016] Figure 8 This includes a graph of the a*b* color space according to some implementation schemes, which shows... Figure 7 The coating shown appears red or orange at different incident angles.

[0017] Figure 9 It is based on some implementation plans that present a yellow hue and have Figure 4 The graphs show the reflectance of four other illustrative coatings of the type shown, varying with wavelength.

[0018] Figure 10 This is a graph of the a*b* color space based on some implementation schemes, which shows... Figure 9 The coating shown exhibits a yellow hue at different incident angles.

[0019] Figure 11 It is shown through some implementation schemes Figure 4 A graph showing the exemplary composition (atomic percentage) at different depths of an illustrative coating of the type shown. Detailed Implementation

[0020] Electronic devices and other objects may incorporate conductive structures. A coating may be formed on the conductive structure to reflect visible light of a specific wavelength, resulting in a desired color. The visible light reflective coating may be deposited on a conductive substrate. This coating may include transition and adhesion layers on the substrate, as well as multilayer thin-film interference filters on the transition and adhesion layers. The thin-film interference filters may be six-layer filters having a bottom TiN layer, a first SiN layer, a first SiH layer, a second SiN layer, a second SiH layer, and an top SiCrN layer. The adhesion and transition layers may contain Cr, CrN, or CrSiN. The coating may exhibit a robust orange, red, or yellow color, with a relatively uniform visual response at different viewing angles when the underlying conductive structure has a three-dimensional shape.

[0021] exist Figure 1 The image shows an exemplary electronic device that may be provided with a conductive structure and a visible light reflective coating. Figure 1The electronic device 10 may be a computing device such as a laptop computer, a computer monitor containing an embedded computer, a tablet computer, a cellular phone, a media player, or other handheld or portable electronic device, a smaller device such as a wristwatch (e.g., a watch with a wristband), a hanging device, a headset or handset device, a device embedded in glasses or other equipment worn on a user's head (e.g., a head-mounted device), or other wearable or micro-devices, a television set, a computer monitor that does not contain an embedded computer, a gaming device, a navigation device, an embedded system (such as a system in which electronic equipment with a display is installed in a kiosk or a car), a wireless base station, a home entertainment system, a wireless speaker device, a wireless access point, equipment that performs two or more of the functions of these devices, or other electronic equipment. Figure 1 In the exemplary configuration, device 10 is a portable device with a generally rectangular lateral profile, such as a cellular phone or tablet. Other configurations may be used for device 10 if desired. Figure 1 The examples are merely illustrative.

[0022] exist Figure 1 In the example, device 10 includes a display, such as display 14. Display 14 may be mounted in a housing (such as housing 12). Housing 12, sometimes referred to as a shell or enclosure, may be formed of plastic, glass, ceramic, fiber composite material, metal (e.g., stainless steel, aluminum, etc.), other suitable materials, or any combination of two or more of these materials. Housing 12 may be formed using a monolithic configuration, in which a portion or all of housing 12 is machined or molded into a single structure, or it may be formed using multiple structures (e.g., an internal frame structure, one or more structures forming the surface of the outer housing, etc.). Housing 12 may have metal sidewalls or sidewalls formed of other materials. Examples of metal materials that can be used to form housing 12 include stainless steel, aluminum, silver, gold, titanium, metal alloys, or any other desired conductive material.

[0023] Display 14 may be formed on (e.g., mounted thereon) the front side (front face) of device 10. Housing 12 may have a rear housing wall on the rear side (rear face) of device 10 opposite the front face of device 10. Conductive housing sidewalls in housing 12 may surround the periphery of device 10. The rear housing wall of housing 12 may be formed of conductive and / or insulating material.

[0024] The rear housing wall of housing 12 and / or display 14 may span the length of device 10 (e.g., parallel to). Figure 1 The housing 12 may extend some or all of its height (e.g., parallel to the Y-axis) and width (e.g., parallel to the Y-axis). The conductive sidewalls of the housing 12 may extend some or all of their height (e.g., parallel to the Z-axis) across the device 10.

[0025] The display 14 may be a touchscreen display incorporating a conductive capacitive touch sensor electrode layer or other touch sensor components (e.g., resistive touch sensor components, acoustic touch sensor components, force-based touch sensor components, light-based touch sensor components, etc.) or may be a non-touchscreen display. The capacitive touchscreen electrodes may be formed from an array of indium tin oxide pads or other transparent conductive structures.

[0026] The display 14 may include a display pixel array formed by liquid crystal display (LCD) components, an electrophoretic display pixel array, a plasma display pixel array, an organic light-emitting diode (OLED) display pixel array, an electrowetting display pixel array, or display pixels based on other display technologies.

[0027] The display 14 may be protected using a display cover. The display cover may be formed of a transparent material such as glass, plastic, sapphire or other crystalline insulating material, ceramic or other transparent material. For example, the display cover may extend across substantially the entire length and width of the device 10.

[0028] Device 10 may include one or more buttons. The buttons may be formed of conductive button members located (e.g., protruding through) an opening in housing 12 or in display 14 (as an example). Buttons may be rotary buttons, sliding buttons, buttons actuated by pressing a movable button member, etc.

[0029] Figure 2 The image shows a cross-sectional side view of device 10 in an exemplary configuration where display 14 has a display overlay. (See image for details.) Figure 2 As shown, the display 14 may have one or more display layers forming a pixel array 18. During operation, the pixel array 18 forms an image for the user in the effective area of ​​the display 14. The display 14 may also have ineffective areas that do not contain pixels and do not produce images (e.g., areas along the boundaries of the pixel array 18). Figure 2 The display overlay 16 overlaps with the pixel array 18 in the effective area and with the electronic components in the device 10.

[0030] The display cover 16 can be formed of a transparent material such as glass, plastic, ceramic, or a crystalline material (e.g., sapphire). In this document, exemplary configurations are sometimes described as being formed of a hard, transparent crystalline material (such as sapphire, sometimes referred to as corundum or crystalline alumina) in which the display cover and other transparent components (e.g., windows for cameras or other light-based devices formed within openings in the housing 12) are made of a hard, transparent crystalline material. Sapphire constitutes a satisfactory material for display covers and windows due to its hardness (9 on the Mohs scale). However, in general, these transparent components can be formed of any suitable material.

[0031] The display cover 16 of the display 14 may be planar or curved, and may have a rectangular, circular, or other shaped profile. Openings may be formed in the display cover if desired. For example, openings may be formed in the display cover to accommodate buttons, speaker ports, or other components. Openings may be formed in the housing 12 to form communication or data ports (e.g., audio jack ports, digital data ports, ports for user identity module (SIM) cards, etc.), openings for buttons, or audio ports (e.g., openings for speakers and / or microphones).

[0032] If needed, device 10 can be coupled to a strap such as strap 28 (e.g., in the case of device 10 being a wristwatch). Strap 28 can be used to hold device 10 on a user's wrist (as an example). Strap 28 may sometimes be referred to herein as wristband 28. Figure 2 In the example, the wristband 28 is attached to an attachment structure 30 in the housing 12 on the opposite side of the device 10. The attachment structure 30 may include lugs, pins, springs, clamps, brackets, and / or other attachment mechanisms that configure the housing 12 to receive the wristband 28. A configuration without the wristband may also be used for the device 10.

[0033] If desired, light-based components such as light-based component 24 can be mounted to align with the opening 20 in the housing 12. The opening 20 can be circular, rectangular, elliptical, triangular, or have other shapes with straight and / or curved edges, or other suitable shapes (the profile as seen from above). A window member 26 can be mounted in the window opening 20 of the housing 12 such that the window member 26 overlaps with component 18. Gaskets, washers, adhesives, screws, or other fastening mechanisms can be used to attach the window member 26 to the housing 12. The surface 22 of the window member 26 can be flush with the outer surface 23 of the housing 12, recessed below the outer surface 23, or as... Figure 3 The window member 26 protrudes from the outer surface 23 (e.g., surface 22 may be located in a plane protruding away from surface 23 along the -Z direction). In other words, the window member 26 may be mounted to the protruding portion of the housing 12. Surface 23 may, for example, form the back surface of the housing 12.

[0034] The conductive structure in device 10 may be provided with a visible light reflective coating that reflects light of certain wavelengths, giving the conductive structure a desired aesthetic appearance (e.g., desired color, reflectivity, etc.). The conductive structure in device 10 may include, for example, conductive portions of housing 12 (e.g., conductive sidewalls of device 10, conductive rear wall of device 10, protrusions of housing 12 for mounting window member 26, etc.), attachment structure 30, conductive portions of wristband 28, conductive mesh, conductive component 32, and / or any other desired conductive structure on device 10. The conductive component 32 may include internal components (e.g., internal housing components, conductive frames, conductive bases, conductive support plates, conductive brackets, conductive clamps, conductive springs, input-output components or devices, etc.), components located inside and outside the device 10 (e.g., conductive SIM card trays or SIM card ports, data ports, microphone ports, speaker ports, conductive button components for ringer buttons, power buttons, volume buttons or other buttons, etc.), or components mounted on the outside of the device 10 (e.g., conductive portions of the band 28, such as hooks for the band 28), and / or any other desired conductive structures on the device 10.

[0035] Figure 3 This is a cross-sectional view of a visible light reflective coating having a multilayer thin-film interference filter, which may be disposed in a conductive structure (e.g., in device 10). Figure 1 and Figure 2 The outer shell 12 parts, Figure 2 On conductive components 32, etc. For example... Figure 3 As shown, the visible light reflective coating 36 may be formed on a conductive substrate, such as substrate 34. The visible light reflective coating 36 is sometimes simply referred to herein as coating 36. Substrate 34 may be a conductive structure in device 10, such as housing 12 (…). Figure 1 and Figure 2 ) conductive part or conductive component 32 ( Figure 2 The substrate 34 may be thicker than the coating 36. The thickness of the substrate 34 may be from 0.1 mm to 5 mm, greater than 0.3 mm, greater than 0.5 mm, between 5 mm and 20 mm, less than 5 mm, less than 2 mm, less than 1.5 mm, or less than 1 mm (by way of example). The substrate 34 may comprise stainless steel, aluminum, titanium, or other metals or alloys. In other suitable arrangements, the substrate 34 may be an insulating substrate, such as a ceramic substrate, a glass substrate, or a substrate formed of other materials.

[0036] Coating 36 may include an adhesion and transition layer 40 on substrate 34, and a multilayer thin-film interference filter, such as thin-film interference filter 38, on the adhesion and transition layer 40. If desired, an optional oleophobic coating may be laminated on the thin-film interference filter 38. In these examples, the thicknesses of the layers of the coating as described herein can be adjusted such that applying the layer produces the same target color response in the presence of both the oleophobic coating and any adhesion layer (such as a SiO2 layer for adhesion to the oleophobic coating). The thin-film interference filter 38 may, for example, have a first lateral surface in direct contact with the adhesion and transition layer 40, and may have a second lateral surface opposite the first lateral surface. The thin-film interference filter 38 may include multiple layers stacked on the adhesion and transition layer 40. In a suitable arrangement described herein by way of example, the thin-film interference filter 38 may include six layers. This is merely illustrative, and the thin-film interference filter 38 may include other numbers of layers (e.g., three, five, four, two, more than six, etc.) if desired.

[0037] The layers of coating 36 can be deposited on substrate 34 using any suitable deposition technique. Examples of techniques that can be used to deposit layers in coating 36 include physical vapor deposition (e.g., evaporation and / or sputtering), cathodic arc deposition, chemical vapor deposition, ion plating, laser ablation, etc. For example, coating 36 can be deposited on substrate 34 in a deposition system having deposition equipment (e.g., a cathode). When the deposition equipment (e.g., a cathode) deposits layers of coating 36, substrate 34 can be moved (e.g., rotated) within the deposition system. If desired, substrate 34 can be dynamically moved / rotated during deposition relative to the speed and / or orientation associated with the deposition equipment (e.g., a cathode). This helps to make coating 36 have the most uniform thickness possible throughout its entire area, even when substrate 34 has a three-dimensional shape.

[0038] The thin-film interference filter 38 can be formed from a stack of materials such as inorganic dielectric layers with different refractive index values. The thin-film interference filter layers can have higher refractive index values ​​(sometimes referred to as "high" refractive index values) and lower refractive index values ​​(sometimes referred to as "low" refractive index values). If desired, high-refractive-index layers can be interleaved with low-refractive-index layers. Incident light can be transmitted through each of the layers in the thin-film interference filter 38, and also reflected from the interfaces between each of the layers, as well as at the interfaces between the thin-film interference filter and the adhesion and transition layer 40, and at the interfaces between the thin-film interference filter and air. By controlling the thickness and refractive index (e.g., composition) of each layer in the thin-film interference filter 38, the light reflected at each interface can be destructively and / or constructively interfered at a selected set of wavelengths, such that the reflected light from the thin-film interference filter 38 is perceived by an observer with the desired color and brightness within the corresponding viewing angle range (incident angle, e.g., from 0 degrees to 60 degrees relative to the normal axis of the conductive structure), while exhibiting a relatively invariant response in the lateral region of the coating even when deposited on a lower substrate 34 having a three-dimensional (e.g., curved) shape.

[0039] Figure 4 This is a cross-sectional side view showing an exemplary composition for coating 36. (See image.) Figure 4 As shown, coating 36 may be stacked on substrate 34. Adhesion and transition layer 40 may include a seed (adhesion) layer (such as seed layer 52 on substrate 34) and one or more transition layers (such as transition layer 50 on seed layer 52). Seed layer 52 may couple substrate 34 to transition layer 50. Figure 4 In this example, the seed layer 52 is formed of chromium (Cr), and the transition layer 50 is formed of chromium nitride (CrN) or chromium silicon nitride (CrSiN). This is merely illustrative. If desired, the seed layer 52 and / or the transition layer 50 may comprise chromium silicon (CrSi), titanium (Ti), chromium silicon nitride (CrSiN), chromium silicon carbonitride (CrSiCN), chromium silicon carbide (CrSiC), chromium carbonitride (CrCN), other metals, metal alloys, and / or other materials. If desired, the coating 36 may comprise multiple stacked transition layers 50.

[0040] The seed layer 52 may have a thickness of 96. The thickness 96 may be, for example, 10-20 μm, 8-25 μm, 5-30 μm, 12-18 μm, 5-20 μm, 1-40 μm, 12 μm, 15 μm, 18 μm, or other thicknesses. The transition layer 50 may have a thickness of 94. The thickness 94 may be 0.9-1.3 μm, 0.8-1.2 μm, 0.8-1.4 μm, 0.5-1.5 μm, 1 μm, 1.1 μm, 1.2 μm, 0.8 μm, 0.5-1.2 μm, 0.9 μm, or other thicknesses. In an example where the transition layer 50 contains CrSiN (e.g., when the transition layer 50 is a CrSiN layer), the composition of the transition layer 50 may be selected such that the atomic percentage (%) of chromium (Cr) atoms in the transition layer 50 is between 60%-70%, 50%-75%, 58%-68%, 60%-66%, 55%-70%, greater than 65%, greater than 60%, greater than 55%, greater than 50%, less than 70%, less than 75%, less than 80%, or other values. The composition of the transition layer 50 can be selected such that the atomic percentage of silicon (Si) atoms in the transition layer 50 is between 20%-30%, 15%-35%, 10%-40%, 22%-28%, 21%-29%, 20%-28%, 18%-38%, and 24%-26%, greater than 22%, greater than 20%, greater than 15%, less than 28%, less than 30%, less than 35%, or other values. The composition of the transition layer 50 can also be selected such that the atomic percentage of nitrogen (N) atoms in the transition layer 50 is between 10%-20%, 12%-18%, 5%-25%, 10%-15%, and 2%-30%, greater than 15%, greater than 12%, greater than 10%, greater than 5%, less than 20%, less than 25%, or other values. For example, the transition layer 50 and the seed layer 52 can together exhibit a color with an L* value of 70-80, an a* value of approximately 0, and a b* value between 0 and 10.

[0041] exist Figure 4 In the example, the thin-film interference filter 38 has six layers (e.g., layers 80, 78, 76, 74, 72, and 70). The thin-film interference filter 38 may also be referred to as a five-layer thin-film interference filter, wherein the bottom layer of the thin-film interference filter forms an opaque color layer that contributes to the color response of the thin-film interference filter.

[0042] like Figure 4As shown, the thin-film interference filter 38 may include a bottom layer 80 (or an opaque colored layer for the thin-film interference layer) stacked on the transition layer 50 (e.g., the top layer of the transition layer in an example where the coating 36 includes multiple transition layers). Layer 80 may have a thickness of 92. The thin-film interference filter 38 may include a second bottom layer 78 stacked on layer 80. Layer 80 may have a thickness of 90. The thin-film interference filter 38 may include a third bottom layer 76 stacked on layer 78. Layer 76 may have a thickness of 88. The thin-film interference filter 38 may include a third top layer 74 stacked on layer 76. Layer 74 may have a thickness of 86. The thin-film interference filter 38 may include a second top layer 72 stacked on layer 74. Layer 72 may have a thickness of 84. The thin-film interference filter 38 may also include a top layer 70 stacked on layer 72. Layer 70 may have a thickness of 82.

[0043] Layer 70 may comprise silicon chromium nitride (SiCrN), and is therefore sometimes referred to herein as SiCrN layer 70. Layer 72 may comprise silane (SiH), and is therefore sometimes referred to herein as SiH layer 72. Layer 74 may comprise silicon nitride (SiN), and is therefore sometimes referred to herein as SiN layer 74. Layer 76 may comprise SiH, and is therefore sometimes referred to herein as SiH layer 76. Layer 78 may comprise SiN, and is therefore sometimes referred to herein as SiN layer 78. Layer 80 may protect titanium nitride (TiN), and is therefore sometimes referred to herein as TiN layer 80. In other words, the thin-film interference filter 38 may comprise an uppermost SiCrN layer 70, a lowermost TiN layer 80, and a set of alternating SiH layers (e.g., a set of one or more SiH layers, such as a set of two SiH layers 72 and 76), and an alternating set of SiN layers (e.g., a set of one or more SiN layers, such as a set of two SiN layers 74 and 78) interspersed with the set of alternating SiH layers. Figure 4 The examples are merely illustrative. The layers of the thin-film interference filter 38 may be arranged in other orders, the set of alternating SiH layers may include any desired number of SiH layers, the set of alternating SiN layers may include any desired number of SiN layers, and / or any of the layers of the thin-film interference filter 38 may have other compositions.

[0044] In the first specific embodiment, the composition and thickness of each layer of the thin-film interference filter 38 can be selected so that the coating 36 basically appears orange within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 20nm-50nm, 30nm-40nm, 35nm-40nm, 30nm-45nm, 25nm-45nm, 36nm-38nm, 25nm-40nm, 30nm-39nm, 37nm, 38nm, 39nm, 34nm, 30nm-45nm, less than 45nm, less than 40nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 30nm-80nm, 40nm-60nm, 45nm-50nm, 45nm-55nm, 35nm-60nm, 42nm-54nm, 46nm-56nm, 49nm, 48nm, 50nm, 52nm, greater than 45nm, greater than 40nm, less than 55nm, less than 50nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 10nm-120nm, 10nm-20nm, 15nm-25nm, 5nm-30nm, 14nm-19nm, 10nm-25nm, 16nm, 15nm, 18nm, 22nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 30nm-70nm, 50nm-60nm, 55nm-60nm, 50nm-65nm, 53nm-61nm, 57nm, 58nm, 52nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 10nm-40nm, 10nm-30nm, 15nm-28nm, 18nm-23nm, 5nm-50nm, 20nm, 25nm, 15nm, 19nm, greater than 15nm, greater than 10nm, less than 25nm, less than 30nm, or other thicknesses. Finally, the thickness 92 of the TiN layer 80 can be selected as 30nm-80nm, 30nm-50nm, 30nm-40nm, 30nm-45nm, 25nm-45nm, 24nm-50nm, 35nm-40nm, 35nm-39nm, 38nm, 35nm, 39nm, 41nm, greater than 35nm, greater than 30nm, less than 40nm, less than 50nm, or other thicknesses. In another suitable arrangement, the thickness 92 of the TiN layer 80 can be relatively large, such as greater than 50nm, greater than 100nm, or greater than 200nm. For example, increasing the thickness of the TiN layer 80 in this way can configure the TiN layer 80 to be at least partially opaque.In the first specific embodiment, the transition layer 50 may contain CrSiN and its thickness may be 500nm-1500nm, 100nm-2000nm, 800nm-1200nm, 500nm-1100nm, 950nm-1190nm, 1000nm, 800nm-1300nm, 950nm, greater than 800nm, greater than 500nm, greater than 100nm, less than 1100nm, less than 1500nm, less than 2000nm, or other thicknesses.

[0045] Figure 5 yes Figure 5 The color response curves of different structures of coating 36. Figure 5 Curve 104 plots the color response (e.g., reflectance % as a function of wavelength) of the coating 36 in the first embodiment. As shown in curve 104, constructing the coating 36 according to the first embodiment can provide the coating with a broad peak at longer wavelengths in the visible spectrum, which constructs the coating to appear as a brighter orange when viewed by an observer.

[0046] Furthermore, constructing the coating 36 according to the first embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 6 Curve 106 illustrates how the color of coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 106, changing the viewing angle causes a small change in the color of coating 36, thus allowing the coating to maintain a stable orange appearance regardless of how the observer views the coating.

[0047] In the second embodiment, the coating 36 has the same layer composition and thickness as in the first embodiment, but... Figure 4 The transition layer 50 is a CrN layer, not a CrSiN layer. Returning to... Figure 5 , Figure 5 Curve 102 plots the color response of the coating 36 in the second embodiment. As shown in curve 102, constructing the coating 36 according to the second embodiment can provide the coating with a broad peak at a longer wavelength in the visible spectrum, which constructs the coating to appear as a brighter orange when observed by an observer.

[0048] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the first and second embodiments can exhibit the following L* values: between 50-65, 55-60, 55-65, 57-60, less than 60, less than 65, greater than 55, greater than 50, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the first and second embodiments can exhibit the following a* values: between 30-40, 30-35, 30-37, 28-38, less than 35, less than 40, greater than 30, greater than 25, greater than 20, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the first and second embodiments can exhibit the following b* values: between 50-60, 45-55, 50-55, 51-54, less than 55, less than 60, greater than 50, greater than 45, greater than 40, or other b* values.

[0049] In the third specific implementation, Figure 4The transition layer 50 contains CrSiN, and the composition and thickness of each layer of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially orange within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected to be greater than the thickness of the SiCrN layer 70 in the first and second embodiments: 40nm-50nm, 38nm-45nm, 35nm-48nm, 30nm-40nm, 39nm-44nm, greater than 40nm, greater than 35nm, less than 45nm, less than 40nm, 45nm, 42nm, 41nm, 35nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected to be less than the thickness of the SiH layer 72 in the first and second embodiments: 30nm-40nm, 25nm-45nm, 30nm-42nm, 31nm-38nm, greater than 30nm, greater than 25nm, less than 40nm, less than 45nm, 38nm, 31nm, 35nm, 29nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected to be greater than the thickness of the SiN layer 74 in the first and second embodiments: 100nm-120nm, 90nm-125nm, 80nm-110nm, 100nm-110nm, 95nm-118nm, greater than 100nm, greater than 90nm, greater than 80nm, less than 110nm, less than 120nm, less than 130nm, 110nm, 106nm, 101nm, 98nm, 105nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected to be less than the thickness of the SiH layer 76 in the first and second embodiments: 30nm-40nm, 25nm-45nm, 25nm-40nm, 30nm-35nm, 29nm-36nm, greater than 30nm, greater than 25nm, less than 35nm, less than 40nm, 30nm, 33nm, 36nm, 29nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected to be greater than the thickness of the SiN layer 78 in the first and second embodiments: 35nm-45nm, 30nm-40nm, 30nm-50nm, 35nm-44nm, greater than 30nm, greater than 35nm, less than 40nm, less than 50nm, 39nm, 38nm, 32nm, 44nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected to be greater than the thickness of the layer 80 in the first embodiment and the second embodiment: 60nm-70nm, 55nm-70nm, 55nm-75nm, 60nm-65nm, 62nm-67nm, greater than 60nm, greater than 55nm, greater than 50nm, less than 70nm, less than 80nm, 68nm, 66nm, 64nm, 60nm or other thicknesses.

[0050] Back Figure 5 , Figure 5 Curve 100 plots the color response of the coating 36 in the third embodiment. As shown by curve 100, constructing the coating 36 according to the third embodiment can provide the coating with a broad peak at longer wavelengths in the visible spectrum, which constructs the coating to appear as a brighter orange when observed by an observer. For example, the third embodiment can provide the coating with a slightly redder appearance than the first and second embodiments.

[0051] In the fourth specific implementation, Figure 4 The transition layer 50 contains CrN, and the composition and thickness of each layer of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially red within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 30nm-50nm, 35nm-45nm, 36nm-54nm, 30nm-41nm, greater than 30nm, greater than 25nm, less than 45nm, less than 50nm, 43nm, 40nm, 35nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 50nm-55nm, 45nm-60nm, 40nm-60nm, 51nm-55nm, 42nm-48nm, 55nm, 53nm, 49nm, greater than 50nm, greater than 40nm, less than 60nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 10nm-20nm, 10nm-25nm, 15nm-25nm, 10nm-30nm, 5nm-30nm, greater than 15nm, greater than 10nm, less than 20nm, less than 25nm, 21nm, 14nm, 17nm, 19nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 60nm-65nm, 60nm-70nm, 55nm-70nm, 58nm-66nm, 60nm, 62nm, 66nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 20nm-30nm, 15nm-30nm, 20nm-25nm, 17nm-23nm, 22nm, 25nm, 16nm, 18nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 35nm-45nm, 30nm-50nm, 40nm-45nm, 33nm-42nm, 41nm, 45nm, 37nm or other thicknesses.

[0052] Figure 7Curve 114 plots the color response (reflectance % as a function of wavelength) of the coating 36 in the fourth embodiment. As shown in curve 114, constructing the coating 36 according to the fourth embodiment can provide the coating with a broad peak at longer wavelengths in the visible spectrum, which constructs the coating to appear as a brighter red when observed by an observer.

[0053] Furthermore, constructing the coating 36 according to the fourth embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 8 Curve 116 illustrates how the color of coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 116, changing the viewing angle causes a small change in the color of coating 36, thus allowing the coating to maintain a stable red appearance regardless of how the observer views the coating.

[0054] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fourth embodiment can exhibit the following L* values: between 30-50, 35-45, 25-42, 38-42, less than 45, less than 50, greater than 35, greater than 30, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fourth embodiment can exhibit the following a* values: between 40-42, 35-45, 30-50, less than 42, less than 45, greater than 40, greater than 35, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fourth embodiment can exhibit the following b* values: between 23-25, 20-25, 20-30, less than 25, less than 30, greater than 20, greater than 15, or other b* values.

[0055] In the fifth specific implementation, Figure 4The transition layer 50 comprises CrN and includes the layers of the thin-film interference filter 38. The composition and thickness of each layer of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially orange-red within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 30nm-50nm, 35nm-45nm, 36nm-54nm, 30nm-41nm, greater than 30nm, greater than 25nm, less than 45nm, less than 50nm, 38nm, 41nm, 35nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 45nm-55nm, 45nm-60nm, 40nm-60nm, 41nm-55nm, 42nm-58nm, 55nm, 50nm, 44nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 10nm-20nm, 10nm-25nm, 15nm-25nm, 10nm-30nm, 5nm-30nm, greater than 15nm, greater than 10nm, less than 20nm, less than 25nm, 21nm, 12nm, 17nm, 16nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 55nm-65nm, 50nm-70nm, 55nm-70nm, 58nm-66nm, 60nm, 59nm, 50nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 20nm-30nm, 15nm-30nm, 20nm-25nm, 17nm-23nm, 21nm, 26nm, 15nm, 19nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 35nm-45nm, 30nm-50nm, 40nm-45nm, 33nm-42nm, 39nm, 45nm, 37nm or other thicknesses.

[0056] Figure 7 Curve 112 plots the color response of the coating 36 in the fifth embodiment. As shown in curve 112, constructing the coating 36 according to the fifth embodiment can provide the coating with a broad peak at a longer wavelength in the visible spectrum, which constructs the coating to appear as a brighter orange-red when observed by an observer.

[0057] Furthermore, constructing the coating 36 according to the fifth embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 8 Curve 118 illustrates how the color of coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 118, changing the viewing angle causes a small change in the color of coating 36, thus allowing the coating to maintain a stable orange-red appearance regardless of how the observer views the coating.

[0058] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fifth embodiment can exhibit the following L* values: between 50-52, 45-55, 45-52, 48-58, less than 52, less than 55, greater than 50, greater than 45, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fifth embodiment can exhibit the following a* values: between 39-41, 35-45, 30-50, less than 41, less than 45, greater than 40, greater than 35, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the fifth embodiment can exhibit the following b* values: between 44-47, 40-50, 42-50, less than 46, less than 50, greater than 40, greater than 45, or other b* values.

[0059] In the sixth specific implementation, Figure 4 The transition layer 50 comprises CrN and includes the layers of the thin-film interference filter 38. The composition and thickness of the layers of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially orange within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 30nm-50nm, 25nm-45nm, 36nm-54nm, 30nm-41nm, greater than 30nm, greater than 25nm, less than 45nm, less than 50nm, 36nm, 41nm, 39nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 45nm-55nm, 45nm-60nm, 40nm-60nm, 41nm-55nm, 42nm-58nm, 55nm, 48nm, 43nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 10nm-20nm, 10nm-25nm, 15nm-25nm, 10nm-30nm, 5nm-30nm, greater than 10nm, less than 20nm, less than 25nm, 15nm, 22nm, 17nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 55nm-65nm, 50nm-70nm, 55nm-70nm, 48nm-66nm, 50nm, 56nm, 57nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 20nm-30nm, 15nm-30nm, 10nm-25nm, 17nm-23nm, 21nm, 22nm, 16nm, 20nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 35nm-45nm, 30nm-50nm, 40nm-45nm, 33nm-42nm, 37nm, 45nm, 39nm or other thicknesses.

[0060] Figure 7 Curve 110 plots the color response of the coating 36 in the sixth embodiment. As shown by curve 112, constructing the coating 36 according to the fifth embodiment can provide the coating with a broad peak at a longer wavelength in the visible spectrum, which constructs the coating to appear as a brighter orange when observed by an observer.

[0061] Furthermore, constructing the coating 36 according to the sixth embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 8 Curve 120 illustrates how the color of coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 120, changing the viewing angle causes a small change in the color of coating 36, thus allowing the coating to maintain a stable orange appearance regardless of how the observer views the coating.

[0062] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the sixth embodiment can exhibit the following L* values: between 61-64, 60-65, and 55-70, less than 64, less than 65, greater than 60, greater than 55, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the sixth embodiment can exhibit the following a* values: between 30-33, 30-35, and 28-38, less than 32, less than 35, greater than 30, greater than 25, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the sixth embodiment can exhibit the following b* values: between 64-66, 60-70, and 62-71, less than 66, less than 70, greater than 65, greater than 60, or other b* values.

[0063] In the seventh specific implementation, Figure 4The transition layer 50 comprises CrN and includes the layers of the thin-film interference filter 38. The composition and thickness of each layer of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially light orange within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 30nm-50nm, 25nm-45nm, 26nm-54nm, 30nm-41nm, greater than 30nm, greater than 25nm, less than 45nm, less than 50nm, 34nm, 36nm, 29nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 45nm-55nm, 40nm-60nm, 30nm-60nm, 41nm-55nm, 42nm-58nm, 45nm, 48nm, 53nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 10nm-20nm, 10nm-25nm, 5nm-25nm, 10nm-30nm, 5nm-30nm, greater than 10nm, less than 20nm, less than 25nm, 14nm, 12nm, 17nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 50nm-65nm, 50nm-70nm, 45nm-70nm, 48nm-66nm, 53nm, 56nm, 47nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 15nm-30nm, 10nm-30nm, 10nm-25nm, 17nm-23nm, 19nm, 22nm, 16nm, 15nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 35nm-45nm, 30nm-50nm, 20nm-45nm, 33nm-42nm, 37nm, 41nm, 35nm or other thicknesses.

[0064] Figure 7 Curve 108 plots the color response of the coating 36 in the sixth embodiment. As shown in curve 108, constructing the coating 36 according to the fifth embodiment can provide the coating with a broad peak at a longer wavelength in the visible spectrum, which constructs the coating to appear as a brighter light orange when observed by an observer.

[0065] Furthermore, constructing the coating 36 according to the seventh embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 8 Curve 122 illustrates how the color of the coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 122, changing the viewing angle causes a small change in the color of the coating 36, thus allowing the coating to maintain a stable light orange appearance regardless of how the observer views the coating.

[0066] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the seventh embodiment can exhibit the following L* values: between 69-72, 70-65, and 65-73, less than 71, less than 75, greater than 70, greater than 65, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the seventh embodiment can exhibit the following a* values: between 20-22, 18-25, and 15-30, less than 21, less than 25, greater than 20, greater than 15, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the seventh embodiment can exhibit the following b* values: between 78-80, 75-81, and 70-85, less than 79, less than 80, greater than 75, greater than 70, or other b* values.

[0067] In the eighth specific implementation, Figure 4 The transition layer 50 comprises CrSiN and includes the layers of the thin-film interference filter 38. The composition and thickness of the layers of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially yellow within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 20nm-30nm, 15nm-35nm, 16nm-34nm, greater than 20nm, greater than 15nm, less than 30nm, less than 35nm, 25nm, 26nm, 29nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 30nm-40nm, 25nm-45nm, 30nm-36nm, 26nm-35nm, 34nm, 36nm, 39nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 50nm-60nm, 45nm-65nm, 52nm-56nm, 40nm-60nm, greater than 50nm, less than 55nm, less than 60nm, 54nm, 52nm, 57nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 35nm-50nm, 40nm-50nm, 35nm-43nm, 38nm-56nm, 42nm, 46nm, 37nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 30nm-50nm, 35nm-40nm, 30nm-45nm, 37nm-43nm, 38nm, 42nm, 36nm, 45nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 35nm-50nm, 30nm-50nm, 40nm-45nm, 33nm-42nm, 42nm, 43nm, 45nm or other thicknesses.

[0068] Figure 9Curve 126 plots the color response of the coating 36 in the eighth embodiment. As shown in curve 126, constructing the coating 36 according to the eighth embodiment can provide the coating with a broad peak at medium to long wavelengths in the visible spectrum, which constructs the coating to appear as a brighter yellow when observed by an observer.

[0069] Furthermore, constructing the coating 36 according to the eighth embodiment can provide the coating with a relatively stable color response under different viewing angles. Figure 10 Curve 132 illustrates how the color of coating 36 (in the a*b* color space) changes relative to an axis perpendicular to the side surface of the coating at different viewing angles (angles of incidence) from zero to 60 degrees. As shown by curve 132, changing the viewing angle causes a small change in the color of coating 36, thus allowing the coating to maintain a stable yellow appearance regardless of how the observer views the coating.

[0070] As an example, from a zero-degree perspective, in the L*a*b* color space, the coating 36 in the eighth embodiment can exhibit the following L* values: between 86-89, 80-90, and 75-95, less than 88, less than 90, greater than 85, greater than 80, or other L* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the eighth embodiment can exhibit the following a* values: between 0-2, 0-5, and 0-15, less than 2, less than 10, greater than 0, greater than 1, or other a* values. From a zero-degree perspective, in the L*a*b* color space, the coating 36 in the eighth embodiment can exhibit the following b* values: between 67-70, 65-72, and 60-75, less than 70, less than 75, greater than 65, greater than 60, greater than 50, or other b* values.

[0071] In the ninth specific implementation, Figure 4The transition layer 50 comprises CrSiN and includes the layers of the thin-film interference filter 38. The composition and thickness of the layers of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially yellow within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 20nm-30nm, 15nm-35nm, 16nm-34nm, greater than 20nm, greater than 15nm, less than 30nm, less than 35nm, 25nm, 27nm, 31nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 20nm-40nm, 25nm-45nm, 20nm-36nm, 26nm-35nm, 34nm, 28nm, 29nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 60nm-80nm, 70nm-75nm, 62nm-76nm, 40nm-80nm, greater than 70nm, less than 75nm, less than 80nm, 64nm, 72nm, 77nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 35nm-50nm, 40nm-50nm, 35nm-43nm, 38nm-56nm, 42nm, 47nm, 38nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 40nm-60nm, 50nm-55nm, 45nm-60nm, 37nm-53nm, 48nm, 51nm, 56nm, 45nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 65nm-70nm, 60nm-80nm, 50nm-75nm, 63nm-72nm, 62nm, 73nm, 68nm or other thicknesses.

[0072] Figure 9 Curve 124 plots the color response of the coating 36 in the ninth embodiment. As shown in curve 124, constructing the coating 36 according to the ninth embodiment can provide the coating with a broad peak at medium to long wavelengths in the visible spectrum, which constructs the coating to appear as a brighter yellow when observed by an observer.

[0073] In the tenth specific implementation, Figure 4The transition layer 50 comprises CrSiN and includes the layers of the thin-film interference filter 38. The composition and thickness of the layers of the thin-film interference filter 38 can be selected so that the coating 36 appears substantially yellow within a predetermined incident angle range. In this example, the thickness 82 of the SiCrN layer 70 can be selected as 20nm-30nm, 15nm-35nm, 16nm-34nm, greater than 20nm, greater than 15nm, less than 30nm, less than 35nm, 25nm, 27nm, 31nm, or other thicknesses. The thickness 84 of the SiH layer 72 can be selected as 20nm-40nm, 25nm-45nm, 20nm-36nm, 26nm-35nm, 34nm, 28nm, 35nm, or other thicknesses. The thickness 86 of the SiN layer 74 can be selected as 40nm-60nm, 45nm-50nm, 42nm-56nm, 40nm-80nm, greater than 40nm, less than 50nm, 48nm, 52nm, 47nm, or other thicknesses. The thickness 88 of the SiH layer 76 can be selected as 35nm-50nm, 30nm-50nm, 35nm-43nm, 38nm-56nm, 42nm, 37nm, 39nm, or other thicknesses. The thickness 90 of the SiN layer 78 can be selected as 30nm-60nm, 30nm-45nm, 35nm-50nm, 37nm-53nm, 37nm, 41nm, 36nm, 35nm, or other thicknesses. Finally, the thickness 80 of the TiN layer 80 can be selected as 30nm-35nm, 25nm-35nm, 20nm-45nm, 32nm, 43nm, 38nm, or other thicknesses.

[0074] Figure 9 Curve 130 plots the color response of the coating 36 in the ninth embodiment. As shown in curve 130, constructing the coating 36 according to the tenth embodiment can provide the coating with a broad peak at medium to long wavelengths in the visible spectrum, which constructs the coating to appear as a brighter yellow when observed by an observer.

[0075] In the eleventh embodiment, the coating 36 has the same layer composition and thickness as in the tenth embodiment, but... Figure 4 The transition layer 50 is a CrN layer rather than a CrSiN layer. Figure 9 Curve 128 plots the color response of the coating 36 in the eleventh embodiment. As shown in curve 128, constructing the coating 36 according to the second embodiment can provide the coating with a broad peak at medium to long wavelengths in the visible spectrum, which constructs the coating to appear as a brighter yellow when observed by an observer.

[0076] Figure 11 It is the first specific implementation (e.g., with) Figure 5 curve 104 and Figure 6 A curve diagram of the composition of the coating 36 in the specific implementation associated with curve 106. Figure 11 The curves were generated using energy-dispersive spectroscopy (EDS) line scans, which measure the atomic percentages of different elements at different depths throughout the thickness of the coating 36, from the outer surface to the entire coating 36.

[0077] like Figure 11 As shown, curve 134 plots the atomic percentage (%) of chromium (Cr) atoms across the entire thickness of coating 36. Curve 136 plots the atomic percentage of silicon (Si) atoms across the entire thickness of coating 36. Curve 138 plots the atomic percentage of nitrogen (N) atoms across the entire thickness of coating 36. Curve 140 plots the atomic percentage of titanium (Ti) atoms across the entire thickness of coating 36.

[0078] As shown by curve 134, Figure 4 Within the SiCrN layer 70 (e.g., within the uppermost layer of the coating, at depth A) and in Figure 4 Within the adhesion and transition layer 40 (e.g., at depths greater than depth F), the coating 38 exhibits a higher percentage (e.g., peak) of Cr atoms. As shown in curve 136, in Figure 4 SiCrN layer 70, Figure 4 The SiH layer 72 (e.g., within the second uppermost layer of the coating, located at depth B), Figure 4 The SiN layer 74 (e.g., within the third uppermost layer of the coating, located at depth C), Figure 4 The SiH layer 76 (e.g., within the third bottommost layer of the coating, located at depth D), Figure 4 The SiN layer 78 (e.g., within the second bottommost layer of the coating, located at depth E) and Figure 4 Within the transition layer 50 (e.g., when the transition layer 50 contains CrSiN as in the first embodiment, at a depth greater than depth F), the coating 38 exhibits a higher percentage (e.g., peak) of Si atoms. As shown in curve 138, in Figure 4 Within the SiCrN layer 70, Figure 4 Within the SiN layer 74, Figure 4 Within the SiN layer 78, Figure 4 Within the TiN layer 80 (e.g., within the bottommost layer of the coating, at depth F), and in Figure 4 Within the transition layer 50, the coating 38 exhibits a higher percentage (e.g., a peak) of N atoms. Finally, as shown in curve 140, in Figure 4 Within the TiN layer 80, the coating 38 exhibits a high percentage (e.g., peak) of Ti atoms.

[0079] As an example, in the first specific implementation, the following can be selected: Figure 4 The composition of the SiCrN layer 70 is such that the atomic percentage of Cr atoms in the SiCrN layer 70 is 10%-15%, 10%-20%, 5%-30%, 6%-31%, 13%-15%, 5%-25%, greater than 10%, less than 20%, or other values. (Optional) Figure 4 The composition of the SiCrN layer 70 is such that the atomic percentage of Si atoms in the SiCrN layer 70 is 30%-40%, 25%-45%, 20%-50%, 32%-39%, 28%-42%, greater than 30%, greater than 25%, less than 40%, less than 45%, or other values. The remaining atomic percentage of the SiCrN layer 70 can be N atoms.

[0080] In the first specific implementation, the following can be selected: Figure 4 The composition of the SiH layer 72 is such that the atomic percentage of Si atoms in the SiH layer 72 is 95%-98%, 97%-98%, 90%-98%, 85%-99%, greater than 97%, greater than 95%, greater than 90%, less than 99%, or other values. The remaining atomic percentage of the SiH layer 72 can be H atoms.

[0081] In the first specific implementation, the following can be selected: Figure 4 The composition of the SiN layer 74 is such that the atomic percentage of Si atoms in the SiN layer 74 is 30%-50%, 35%-48%, 38%-48%, 25%-49%, greater than 35%, greater than 30%, less than 50%, or other values. The remaining atomic percentage of the SiN layer 74 may be N atoms.

[0082] In the first specific implementation, the following can be selected: Figure 4 The composition of the SiH layer 76 is such that the atomic percentage of Si atoms in the SiH layer 76 is 95%-98%, 97%-98%, 90%-98%, 85%-99%, greater than 97%, greater than 95%, less than 99%, greater than 90%, or other values. The remaining atomic percentage of the SiH layer 72 can be H atoms.

[0083] In the first specific implementation, the following can be selected: Figure 4 The composition of the SiN layer 78 is such that the atomic percentage of Si atoms in the SiN layer 78 is 30%-50%, 35%-48%, 38%-48%, 25%-49%, greater than 35%, greater than 30%, less than 50%, or other values. The remaining atomic percentage of the SiN layer 74 can be N atoms.

[0084] In the first specific implementation, the following can be selected: Figure 4The composition of the TiN layer 80 is such that the atomic percentage of Ti atoms in the TiN layer 80 is 40%-60%, 45%-55%, 38%-58%, greater than 40%, greater than 35%, less than 60%, or other values. The remaining atomic percentage of the TiN layer 80 can be N atoms.

[0085] In the first specific implementation, the following can be selected: Figure 4 The composition of the transition layer 50 is such that the atomic percentage of Cr atoms in the transition layer 50 is 50%-80%, 60%-75%, 62%-70%, 55%-79%, greater than 60%, greater than 55%, less than 75%, or other values. The atomic percentage of Si atoms in the transition layer 50 can be 10%-30%, 15%-25%, 19%-23%, 5%-29%, greater than 15%, greater than 10%, less than 30%, less than 40%, or other values. The remaining atomic percentages of the transition layer 50 can be Si atoms. For example, these atomic percentages can be normalized atomic percentages.

[0086] Figures 4-11 The examples are merely illustrative. Additional elements may be included in one or more layers of the coating 36. These layers may be arranged in other orders. These layers may have different thicknesses or compositions. The coating may have other color distributions and angular responses. The SiCrN layers described herein may sometimes also be referred to as CrSiN layers, and vice versa (e.g., these layers may be individual layers containing Si, Cr, and N atoms).

[0087] According to one embodiment, an apparatus is provided, the apparatus comprising: a conductive substrate; and a coating on the conductive substrate and having a color, the coating comprising an adhesion and transition layer and a thin-film interference filter on the adhesion and transition layer, the thin-film interference filter comprising an uppermost SiCrN layer forming the thin-film interference filter, a lowermost TiN layer forming the thin-film interference filter, a set of SiH layers, and a set of SiN layers interleaved with the set of SiH layers.

[0088] According to another embodiment, the thickness of the SiCrN layer is between 20 nm and 50 nm.

[0089] According to another implementation, the thickness of the TiN layer is between 30 nm and 80 nm.

[0090] According to another embodiment, the SiN layer group includes a first SiN layer and a second SiN layer on a TiN layer, and the SiH layer group includes a first SiH layer inserted between the first SiN layer and the second SiN layer and includes a second SiH layer inserted between the second SiN layer and the SiCrN layer.

[0091] According to another embodiment, the thickness of the second SiH layer is between 30 nm and 80 nm, and the thickness of the second SiH layer is between 30 nm and 70 nm.

[0092] According to another embodiment, the thickness of the first SiN layer is between 10 nm and 40 nm.

[0093] According to another embodiment, the thickness of the second SiN layer is between 10 nm and 120 nm.

[0094] According to another embodiment, the thickness of the SiCrN layer is between 30 nm and 45 nm, the thickness of the second SiH layer is between 40 nm and 60 nm, the thickness of the second SiN layer is between 10 nm and 25 nm, the thickness of the first SiH layer is between 50 nm and 65 nm, the thickness of the first SiN layer is between 10 nm and 30 nm, and the thickness of the TiN layer is between 30 nm and 50 nm.

[0095] According to another embodiment, in the L*a*b* color space, the L* value of the coating at a zero-degree incident angle is greater than 50, the a* value at the same incident angle is greater than 20, and the ab* value is greater than 40.

[0096] According to another embodiment, the adhesion and transition layer includes a CrSiN transition layer, and a thin-film interference filter is disposed on the CrSiN transition layer.

[0097] According to another embodiment, the atomic percentage of Cr atoms in the SiCrN layer is between 5% and 30%, the atomic percentage of Si atoms in the SiCrN layer is between 20% and 50%, the atomic percentage of Si atoms in the first SiH layer and the second SiH layer is greater than 90%, the atomic percentage of Si atoms in the first SiN layer and the second SiN layer is between 30% and 50%, and the atomic percentage of Ti atoms in the TiN layer is between 40% and 60%.

[0098] According to another embodiment, the adhesion and transition layer includes a CrN transition layer, and a thin-film interference filter is disposed on the CrN transition layer.

[0099] According to another embodiment, the adhesion and transition layer includes a CrSiN transition layer, a thin-film interference filter is disposed on the CrSiN transition layer, the thickness of the SiCrN layer is between 20 nm and 30 nm, the thickness of the second SiH layer is between 30 nm and 40 nm, the thickness of the second SiN layer is between 50 nm and 60 nm, the thickness of the first SiH layer is between 35 nm and 50 nm, the thickness of the first SiN layer is between 30 nm and 45 nm, and the thickness of the TiN layer is between 30 nm and 50 nm.

[0100] According to another embodiment, in the L*a*b* color space, the coating has an L* value greater than 80 at a zero-degree incident angle, an a* value greater than 0 at the same incident angle in the L*a*b* color space, and an ab* value greater than 50 in the L*a*b* color space.

[0101] According to one embodiment, an apparatus is provided, the apparatus comprising a conductive substrate and a colored coating on the conductive substrate, the coating comprising: an adhesion and transition layer; a TiN layer on the adhesion and transition layer; a first SiH layer and a second SiH layer; a first SiN layer and a second SiN layer, the first SiH layer being inserted between the first SiN layer and the second SiN layer, and the first SiN layer being inserted between the first SiH layer and the TiN layer; and a SiCrN layer, the second SiH layer being inserted between the SiCrN layer and the second SiN layer.

[0102] According to another embodiment, the adhesion and transition layer includes a CrSiN transition layer.

[0103] According to another embodiment, the adhesion and transition layer includes a CrN transition layer.

[0104] According to another embodiment, the conductive substrate comprises stainless steel.

[0105] According to one embodiment, an electronic device is provided, the electronic device including a conductive structure and a colored coating on the conductive structure, the coating including an adhesion and transition layer, a first layer containing titanium and nitrogen, a second layer containing silicon and nitrogen, a third layer containing silicon and hydrogen, a fourth layer containing silicon and nitrogen, a fifth layer containing silicon and hydrogen, and a sixth layer containing silicon, chromium and nitrogen.

[0106] According to another embodiment, the second, third, fourth and fifth layers form at least a portion of the thin-film interference filter, and the sixth layer is the uppermost layer of the thin-film interference filter.

[0107] The foregoing description is merely illustrative and various modifications can be made to the described implementation scheme. The described implementation scheme can be implemented independently or in any combination.

Claims

1. An apparatus having a coating, comprising: Conductive substrate; and A coating material, the coating material being applied to the conductive substrate and having a color, the coating material comprising: Adhesion and transition layers, and A thin-film interference filter is provided on the adhesion and transition layer, wherein the thin-film interference filter comprises an uppermost SiCrN layer, a lowermost TiN layer, a set of SiH layers, and a set of SiN layers interleaved with the set of SiH layers. The set of SiN layers includes a first SiN layer on the TiN layer and a second SiN layer. The set of SiH layers includes a first SiH layer inserted between the first SiN layer and the second SiN layer and a second SiH layer inserted between the second SiN layer and the SiCrN layer. The thickness of the second SiH layer is between 30 nm and 80 nm, and the thickness of the first SiH layer is between 30 nm and 70 nm. The thickness of the first SiN layer is between 10 nm and 40 nm, and the thickness of the second SiN layer is between 10 nm and 120 nm. The atomic percentage of Cr atoms in the SiCrN layer is between 5% and 30%, the atomic percentage of Si atoms in the SiCrN layer is between 20% and 50%, the atomic percentage of Si atoms in the first SiH layer and the second SiH layer is greater than 90%, the atomic percentage of Si atoms in the first SiN layer and the second SiN layer is between 30% and 50%, and the atomic percentage of Ti atoms in the TiN layer is between 40% and 60%.

2. The apparatus according to claim 1, wherein the thickness of the SiCrN layer is between 20 nm and 50 nm.

3. The apparatus of claim 2, wherein the thickness of the TiN layer is between 30 nm and 80 nm.

4. The apparatus according to claim 1, wherein the thickness of the SiCrN layer is between 30 nm and 45 nm, the thickness of the second SiH layer is between 40 nm and 60 nm, the thickness of the second SiN layer is between 10 nm and 25 nm, the thickness of the first SiH layer is between 50 nm and 65 nm, the thickness of the first SiN layer is between 10 nm and 30 nm, and the thickness of the TiN layer is between 30 nm and 50 nm.

5. The apparatus according to claim 4, wherein in L a b In the color space, the coating at a zero-degree incident angle L Values ​​greater than 50, in the L a b In the color space, a at the incident angle The value is greater than 20, and in the L a b In the color space, b The value is greater than 40.

6. The apparatus of claim 4, wherein the adhesion and transition layer comprises a CrSiN transition layer, and the thin-film interference filter is disposed on the CrSiN transition layer.

7. The apparatus of claim 4, wherein the adhesion and transition layer comprises a CrN transition layer, and the thin-film interference filter is disposed on the CrN transition layer.

8. The apparatus of claim 1, wherein the adhesion and transition layer comprises a CrSiN transition layer, the thin-film interference filter is disposed on the CrSiN transition layer, the thickness of the SiCrN layer is between 20 nm and 30 nm, the thickness of the second SiH layer is between 30 nm and 40 nm, the thickness of the second SiN layer is between 50 nm and 60 nm, the thickness of the first SiH layer is between 35 nm and 50 nm, the thickness of the first SiN layer is between 30 nm and 45 nm, and the thickness of the TiN layer is between 30 nm and 50 nm.

9. The apparatus of claim 8, wherein in L a b In the color space, the coating at a zero-degree incident angle L Values ​​greater than 80, in the L a b In the color space, a at the incident angle The value is greater than 0, and in the L a b In the color space, b The value is greater than 50.

10. An apparatus having a coating, the apparatus comprising: Conductive substrate; and A coating material, the coating material being applied to the conductive substrate and having a color, the coating material comprising: Adhesion and transition layer, TiN layer on the adhesion and transition layer, First SiH layer and second SiH layer A first SiN layer and a second SiN layer, wherein a first SiH layer is inserted between the first SiN layer and the second SiN layer, and wherein the first SiN layer is inserted between the first SiH layer and the TiN layer, and A SiCrN layer, wherein the second SiH layer is inserted between the SiCrN layer and the second SiN layer. The thickness of the second SiH layer is between 30 nm and 80 nm, and the thickness of the first SiH layer is between 30 nm and 70 nm; the thickness of the first SiN layer is between 10 nm and 40 nm; and the thickness of the second SiN layer is between 10 nm and 120 nm. The atomic percentage of Cr atoms in the SiCrN layer is between 5% and 30%, the atomic percentage of Si atoms in the SiCrN layer is between 20% and 50%, the atomic percentage of Si atoms in the first SiH layer and the second SiH layer is greater than 90%, the atomic percentage of Si atoms in the first SiN layer and the second SiN layer is between 30% and 50%, and the atomic percentage of Ti atoms in the TiN layer is between 40% and 60%.

11. The apparatus of claim 10, wherein the adhesion and transition layer comprises a CrSiN transition layer.

12. The apparatus of claim 10, wherein the adhesion and transition layer comprises a CrN transition layer.

13. The apparatus of claim 10, wherein the conductive substrate comprises stainless steel.

14. An electronic device, comprising: Conductive structure; and A coating material, the coating material being applied to the conductive structure and having a color, the coating material comprising: Adhesion and transition layer, A first layer containing titanium and nitrogen on the adhesion and transition layer, The second layer contains silicon and nitrogen. A third layer containing silicon and hydrogen. A fourth layer containing silicon and nitrogen. A fifth layer containing silicon and hydrogen, and The sixth layer contains silicon, chromium, and nitrogen. The thickness of the fifth layer is between 30 nm and 80 nm, the thickness of the third layer is between 30 nm and 70 nm, the thickness of the second layer is between 10 nm and 40 nm, and the thickness of the fourth layer is between 10 nm and 120 nm. The atomic percentage of Cr atoms in the sixth layer is between 5% and 30%, the atomic percentage of Si atoms in the sixth layer is between 20% and 50%, the atomic percentage of Si atoms in the third and fifth layers is greater than 90%, the atomic percentage of Si atoms in the second and fourth layers is between 30% and 50%, and the atomic percentage of Ti atoms in the first layer is between 40% and 60%.

15. The electronic device of claim 14, wherein the second, third, fourth and fifth layers form at least a portion of a thin-film interference filter, and the sixth layer is the uppermost layer of the thin-film interference filter.

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