Plasma processing apparatus and method of controlling a frequency of a generation source generating high frequency power
By adjusting the generator source frequency in the plasma processing device and using frequency shifting technology to reduce reflection, the problem of severe high-frequency power reflection from the generator source was solved, thus improving processing efficiency and stability.
CN116724669BActive Publication Date: 2026-06-23TOKYO ELECTRON LTD
Patent Information
- Application Number
- CN202280010797.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2021-02-10
- Filing Date
- 2022-01-21
- Publication Date
- 2026-06-23
- Estimated Expiration
- 2042-01-21
AI Technical Summary
Technical Problem
In existing plasma processing devices, the high-frequency power of the generator source is highly reflective, which affects the processing effect.
Method used
By periodically applying bias energy using a bias power supply in a plasma processing device, and adjusting the generator source frequency during the phase period of multiple waveform cycles according to the reflection degree of the high-frequency power of the generator source, the degree of reflection is reduced by using frequency shifting technology.
Benefits of technology
It effectively reduces the reflection of high-frequency power from the generation source, thereby improving the efficiency and stability of plasma processing.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116724669B_ABST
Abstract
A plasma processing apparatus disclosed includes a chamber, a substrate support section, a high-frequency power supply, and a bias power supply control section. The high-frequency power supply generates a generation-source high-frequency power to generate plasma in the chamber. The bias power supply periodically applies a bias energy having a waveform period to a bias electrode of the substrate support section. The high-frequency power supply adjusts a generation-source frequency of the generation-source high-frequency power during an nth phase period in an mth waveform period of a plurality of waveform periods, according to a change in a degree of reflection of the generation-source high-frequency power. The change in the degree of reflection is determined by using different generation-source frequencies from each other during the nth phase period in each of two or more periods before the mth waveform period.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Plasma processing apparatus, plasma processing method, and computer readable storage medium
JP2009246091A
Plasma processing apparatus and plasma processing method
CN107275179A
Method for impedance matching of plasma processing apparatus
CN107993915A