Plasma processing apparatus and method of controlling a frequency of a generation source generating high frequency power
By adjusting the generator source frequency in the plasma processing device and using frequency shifting technology to reduce reflection, the problem of severe high-frequency power reflection from the generator source was solved, thus improving processing efficiency and stability.
CN116724669BActive Publication Date: 2026-06-23TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2022-01-21
- Publication Date
- 2026-06-23
AI Technical Summary
Technical Problem
In existing plasma processing devices, the high-frequency power of the generator source is highly reflective, which affects the processing effect.
Method used
By periodically applying bias energy using a bias power supply in a plasma processing device, and adjusting the generator source frequency during the phase period of multiple waveform cycles according to the reflection degree of the high-frequency power of the generator source, the degree of reflection is reduced by using frequency shifting technology.
Benefits of technology
It effectively reduces the reflection of high-frequency power from the generation source, thereby improving the efficiency and stability of plasma processing.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116724669B_ABST
Abstract
A plasma processing apparatus disclosed includes a chamber, a substrate support section, a high-frequency power supply, and a bias power supply control section. The high-frequency power supply generates a generation-source high-frequency power to generate plasma in the chamber. The bias power supply periodically applies a bias energy having a waveform period to a bias electrode of the substrate support section. The high-frequency power supply adjusts a generation-source frequency of the generation-source high-frequency power during an nth phase period in an mth waveform period of a plurality of waveform periods, according to a change in a degree of reflection of the generation-source high-frequency power. The change in the degree of reflection is determined by using different generation-source frequencies from each other during the nth phase period in each of two or more periods before the mth waveform period.
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