Laminated components and glass compositions

Abstract

The present invention relates to a laminated member having a glass member whose straight transmittance at a wavelength of 850 nm is within a prescribed range, a joining layer containing a resin on the glass member, and a Si-SiC member on the joining layer, wherein the glass member contains prescribed amounts of SiO2, Al2O3, B2O3, and P2O5, the average linear expansion coefficient α of the Si-SiC member at 20-200°C, the average linear expansion coefficient β of the glass member at 20-200°C, and the absolute value |α-β| of the value obtained by subtracting β from α are within prescribed ranges.

Description

Technical Field

[0001] The present invention relates to glass compositions used in laminated parts and glass components constituting laminated parts. Background Technology

[0002] In a complete kitchen, the worktops, heating and cooking appliances, etc., are connected by a countertop. Materials used for countertops include stainless steel, artificial marble, and ceramic.

[0003] In addition, in inspection devices and testing devices used for electrical testing of electronic equipment, glass or the like is used as the material for the platform on which the electronic equipment is placed.

[0004] The heating cooker is installed in an opening provided on the work surface. The heating cooker has a top plate for holding the object to be heated (such as a pot). Examples of materials for the top plate include crystallized glass (see Patent Document 1) and ceramic.

[0005] In addition, Patent Documents 2 and 3 disclose inspection devices and testing devices for inspecting the electrical characteristics of electronic devices. For example, the inspection device in Patent Document 2 has a platform made of ceramic, quartz, or glass, and a cooling unit.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2012-148958

[0009] Patent Document 2: International Publication No. 2018 / 100881

[0010] Patent Document 3: Japanese Patent Application Publication No. 9-298225 Summary of the Invention

[0011] In recent years, there has been a strong desire, from an aesthetic design perspective, to use the same material for the countertop and top panel. Therefore, research is underway to apply heating elements used in the top panels of appliances such as cookers and inspection devices to the countertop.

[0012] In order to control the temperature within a specified range relative to the set temperature, the heating element used in the top plate is required to have a structure capable of rapid heating and a cooling (heat absorption) structure to protect the temperature sensor containing electronic equipment. Therefore, the heating element is required to have excellent temperature rise and impact resistance.

[0013] The inventors evaluated a laminated component comprising a glass component, a resin bonding layer, and a Si-SiC component, which are conventional heating components, and found that although the temperature rise and impact resistance are excellent, there is still room for improvement in the thermal shock resistance.

[0014] Therefore, the objective of this invention is to provide a laminated component with excellent temperature rise resistance, impact resistance and thermal shock resistance, and a glass composition used in the glass component constituting the laminated component.

[0015] The inventors conducted in-depth research on the above-mentioned issues and found that if the glass component, the resin-containing bonding layer, and the Si-SiC component have a specified linear transmittance, and the composition of the glass component is within a specified range, and the average linear expansion coefficient α of the Si-SiC component, the average linear expansion coefficient β of the glass component, and the absolute value of the difference between α and β (|α-β|) are within a specified range, then the temperature rise resistance, impact resistance, and thermal shock resistance are excellent, thus completing the present invention.

[0016] That is, the inventors discovered that the above-mentioned problems can be solved by the following configuration.

[0017] [1] A stacked component, comprising:

[0018] Glass components with a linear transmittance of over 80% at a wavelength of 850nm.

[0019] A resin-containing bonding layer on the aforementioned glass component, and

[0020] Si-SiC components on the aforementioned bonding layer;

[0021] When expressed as a molar percentage based on oxides, the aforementioned glass components contain 55.0–85.0 mol% SiO2, 1.5–22.0 mol% Al2O3, 2.0–14.0 mol% B2O3, and 0–5.0 mol% P2O5.

[0022] The total content of the above-mentioned SiO2, Al2O3, B2O3, and P2O5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%.

[0023] The average coefficient of linear expansion α of the above-mentioned Si-SiC components at 20–200 °C is 2.85–4.00 ppm / °C.

[0024] The average coefficient of linear expansion β of the aforementioned glass components at temperatures ranging from 20 to 200°C is 1.50 to 5.00 ppm / °C.

[0025] The absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component from the average linear expansion coefficient α of the Si-SiC component at 20 to 200°C, |α - β|, is less than 2.00 ppm / °C.

[0026] [2] According to the laminated component of [1], wherein the glass component, expressed as a molar percentage based on oxides, contains 60.0 to 78.0 mol% SiO2, 8.0 to 18.0 mol% Al2O3, 2.0 to 11.0 mol% B2O3 and 0 to 3.0 mol% P2O5.

[0027] The total content of the above-mentioned SiO2, Al2O3, B2O3 and P2O5, expressed as a molar percentage based on oxides, is 80.0 to 90.0%.

[0028] [3] According to the laminated component described in [1] or [2], wherein the total content of RO and ZnO in the glass component, expressed as a molar percentage based on oxides, is 2.0% to 25.0%.

[0029] The total R2O content in the aforementioned glass components, expressed as a molar percentage based on oxides, ranges from 0 to 15.0%.

[0030] [4] The laminated component according to any one of [1] to [3], wherein the average linear expansion coefficient β of the glass component is 2.00 to 3.50 ppm / ℃, the Young's modulus is 40 to 120 GPa, and the melting temperature is 1000 to 2000℃.

[0031] [5] The laminated component according to any one of [1] to [4], wherein the content of the B2O3 contained in the glass component is 8.5 mol% or less.

[0032] [6] The laminated component according to any one of [1] to [5], wherein the glass component contains 0 to 13.0 mol% Na2O when expressed as a molar percentage based on oxides.

[0033] [7] The laminated component according to any one of [1] to [6], wherein the glass component contains 0.0001 to 0.0115 mol% Fe2O3 when expressed as a molar percentage based on oxides.

[0034] [8] The laminated component according to any one of [1] to [7], wherein the linear transmittance of the glass component at a wavelength of 850 nm is 90% or more.

[0035] [9] The laminated component according to any one of [1] to [8], wherein the thickness of the glass component is 2 to 40 mm.

[0036] The thickness of the aforementioned Si-SiC component is 0.5–15 mm.

[0037]

[10] The laminated component according to any one of [1] to [9], wherein the thermal conductivity of the Si-SiC component at 20°C is 130 to 300 W / m•K.

[0038]

[11] The laminated component according to any one of [1] to

[10] , wherein the average linear expansion coefficient β of the glass component at 20 to 200°C is smaller than the average linear expansion coefficient α of the Si-SiC component at 20 to 200°C.

[0039]

[12] The laminated component according to any one of [1] to

[11] , wherein the Young's modulus of the Si-SiC component is 300 to 420 GPa.

[0040]

[13] The laminated component according to any one of [1] to

[12] , wherein the Si content of the Si-SiC component is 8 to 60% by mass.

[0041]

[14] The laminated component according to any one of [1] to

[13] , wherein the heat resistance temperature of the resin is 120 to 420°C.

[0042]

[15] The laminated component according to any one of [1] to

[14] , wherein the average linear expansion coefficient γ of the bonding layer at 20 to 200°C is 2 to 200 ppm / °C.

[0043]

[16] The laminated component according to any one of [1] to

[15] , wherein the density is 2.40 to 2.85 g / cm³. 3 .

[0044]

[17] The laminated component according to any one of [1] to

[16] , wherein the warpage is 0.25 mm or less.

[0045]

[18] The laminated component according to any one of [1] to

[17] , further comprising:

[0046] The second bonding layer disposed on the above-mentioned Si-SiC component, and

[0047] A second Si-SiC component bonded to the aforementioned Si-SiC component via the aforementioned second bonding layer.

[0048]

[19] A glass composition for use in a laminated component comprising a glass component, a resin-containing bonding layer on the glass component, and a Si-SiC component on the bonding layer, wherein,

[0049] The above-mentioned glass composition has a linear transmittance of over 80% at a wavelength of 850 nm.

[0050] The above-mentioned glass composition, expressed as a molar percentage based on oxides, contains 55.0–85.0 mol% SiO2, 1.5–22.0 mol% Al2O3, 2.0–14.0 mol% B2O3, and 0–5.0 mol% P2O5.

[0051] In the above glass composition, the total content of SiO2, Al2O3, B2O3, and P2O5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%.

[0052] The average coefficient of linear expansion β of the above glass composition at 20–200°C is 1.50–5.00 ppm / °C.

[0053] The above-described glass composition is used in a laminated component of a Si-SiC component having an average linear expansion coefficient α of 2.85 to 4.00 ppm / ℃ at 20 to 200℃, such that the absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component at 20 to 200℃ from the average linear expansion coefficient α of the Si-SiC component at 20 to 200℃, |α - β|, is 2.00 ppm / ℃ or less.

[0054]

[20] A glass composition, expressed as a molar percentage based on oxides, comprises 55.0–85.0 mol% SiO2, 1.5–22.0 mol% Al2O3, 2.0–14.0 mol% B2O3, and 0–5.0 mol% P2O5.

[0055] The total content of the above-mentioned SiO2, Al2O3, B2O3, and P2O5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%.

[0056] The average linear expansion coefficient β at 20–200℃ is 1.50–5.00 ppm / ℃.

[0057] The linear transmittance at a wavelength of 850 nm is over 80%.

[0058] According to the present invention, it is possible to provide a laminated component with excellent temperature rise resistance, impact resistance and thermal shock resistance, and a glass composition used in the glass component constituting the laminated component. Attached Figure Description

[0059] Figure 1 This is a schematic cross-sectional view of a stacked component according to one aspect of the present invention. Detailed Implementation

[0060] The terms used in this invention have the following meanings.

[0061] The range of values ​​represented by “~” indicates the range of values ​​recorded before and after “~” as the lower and upper limits.

[0062] [Layered components]

[0063] The laminated component of the present invention is characterized by having a glass component with a linear transmittance of 80% or more at a wavelength of 850 nm, a resin-containing bonding layer on the glass component, and a Si-SiC component on the bonding layer. The glass component, expressed as a molar percentage based on oxides, comprises 55.0 to 85.0 mol% SiO2, 1.5 to 22.0 mol% Al2O3, 2.0 to 14.0 mol% B2O3, and 0 to 5.0 mol% P2O5. The total content of 5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%. The average linear expansion coefficient α of the Si-SiC component at 20 to 200°C is 2.85 to 4.00 ppm / °C, and the average linear expansion coefficient β of the glass component at 20 to 200°C is 1.50 to 5.00 ppm / °C. The absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component at 20 to 200°C from the average linear expansion coefficient α of the Si-SiC component at 20 to 200°C, |α - β|, is less than 2.00 ppm / °C.

[0064] The laminated component of the present invention exhibits excellent temperature rise resistance, impact resistance, and thermal shock resistance. The exact reasons for this are not yet clear, but are presumed to be based on the following factors.

[0065] That is, it is speculated that by using glass components with a linear transmittance of more than 80% at a wavelength of 850nm to allow sufficient infrared light for heating to pass through, the laminated components can be heated at a high speed.

[0066] Additionally, it is speculated that by having a resin-containing bonding layer, the bonding layer can function as a cushioning material, thereby improving impact resistance.

[0067] Furthermore, it is speculated that by keeping the average linear expansion coefficient α of the Si-SiC component, the average linear expansion coefficient β of the glass component, and the absolute value |α-β| within the above range, the difference in expansion coefficients with the resin-containing bonding layer is reduced, thereby reducing the generated stress and improving thermal shock resistance.

[0068] Hereinafter, a stacked component of one embodiment of the present invention will be described with reference to the accompanying drawings.

[0069] Figure 1This is a schematic cross-sectional view of a laminated component according to one embodiment of the present invention. The laminated component 100 includes: a glass component 101, a bonding layer 103 disposed on the glass component 101, and a Si-SiC component 105 disposed on the bonding layer 103. The laminated component 100 has a laminated structure in which the glass component 101, the bonding layer 103, and the Si-SiC component 105 are sequentially stacked.

[0070] [Si-SiC components]

[0071] In one embodiment of the present invention, the Si-SiC component refers to a sintered component made of a composite material comprising silicon carbide (SiC) and silicon (Si) (metallic Si).

[0072] The Si-SiC component 105 is preferably a ceramic containing 40-92% by mass of SiC and 8-60% by mass of Si relative to the total mass of the Si-SiC component, more preferably a ceramic containing 50-87% by mass of SiC and 13-50% by mass of Si, even more preferably a ceramic containing 55-82% by mass of SiC and 18-45% by mass of Si, particularly preferably a ceramic containing 60-77% by mass of SiC and 23-40% by mass of Si, and most preferably a ceramic containing 65-72% by mass of SiC and 28-35% by mass of Si.

[0073] If the Si and SiC content of the Si-SiC component 105 is within the above range, then the Si-SiC component 105 has an excellent balance between thermal and mechanical properties.

[0074] The composition of the Si-SiC component 105 is not particularly limited as long as it contains SiC and Si, and may also include components from sintering aids, trace impurities (Fe, etc.). Sintering aids are not particularly limited, and examples include BeO, B4C, BN, Al, and AlN.

[0075] The thickness of the Si-SiC component 105 is preferably 0.5 to 15 mm. More preferably, the thickness of the Si-SiC component 105 is 1.5 mm or more, even more preferably 2.0 mm or more, and particularly preferably 2.5 mm or more.

[0076] The thickness of the Si-SiC component 105 is more preferably 10.0 mm or less, further preferably 7.5 mm or less, and particularly preferably 5.5 mm or less.

[0077] The Si-SiC component 105 can be thinned by being supported by the glass component 101. Because the Si-SiC component 105 can be thinned, rapid heating and cooling can be achieved.

[0078] The thickness of the Si-SiC component 105 can be measured, for example, using a vernier caliper or a digital measuring instrument.

[0079] The average linear expansion coefficient α of the Si-SiC component 105 at 20–200 °C is 2.85–4.00 ppm / °C. Hereinafter, the average linear expansion coefficient α of the Si-SiC component 105 at 20–200 °C will be simply referred to as the average linear expansion coefficient α.

[0080] The average linear expansion coefficient α is preferably 2.90 ppm / ℃ or higher, more preferably 2.95 ppm / ℃ or higher, and particularly preferably 3.00 ppm / ℃ or higher.

[0081] The average linear expansion coefficient α is preferably 3.40 ppm / ℃ or less, more preferably 3.20 ppm / ℃ or less, and particularly preferably 3.10 ppm / ℃ or less.

[0082] If the average linear expansion coefficient α of the Si-SiC component 105 is within the above-mentioned range, it is easy to make the average linear expansion coefficient of the Si-SiC component 105 consistent with or close to that of the glass component 101. In addition, the thermal conductivity and strength of the Si-SiC component 105 can be increased, thus improving the impact resistance while increasing the rate of temperature rise.

[0083] Among them, if the average linear expansion coefficient α is 3.00 to 3.10 ppm / ℃, the balance between thermal conductivity and strength of Si-SiC components is even better.

[0084] The average linear expansion coefficient α can be measured using a dilatometer or thermomechanical analyzer with the measurement temperature range set to 20℃~200℃.

[0085] As a method to make the average linear expansion coefficient α of the Si-SiC component 105 within the above-mentioned range, one example is to adjust the content of SiC and Si to the above-mentioned range.

[0086] The thermal conductivity of the Si-SiC component 105 at 20°C is preferably 130–300 W / m•K.

[0087] The thermal conductivity of the Si-SiC component 105 at 20°C is more preferably 190 W / m•K or higher, even more preferably 210 W / m•K or higher, and particularly preferably 225 W / m•K or higher.

[0088] The thermal conductivity of the Si-SiC component 105 at 20°C is more preferably 270 W / m•K or less, even more preferably 260 W / m•K or less, and particularly preferably 250 W / m•K or less.

[0089] If the thermal conductivity of the Si-SiC component 105 at 20°C is within the above-mentioned range, its heat uniformity as a heating component is improved. Furthermore, if the thermal conductivity of the Si-SiC component 105 is within the above-mentioned range, it is possible to prevent a decrease in yield due to deviations in thermal conductivity during the manufacturing of the Si-SiC component 105, and to easily stabilize the quality of the Si-SiC component 105.

[0090] The thermal conductivity of the Si-SiC component 105 at 20°C can be measured, for example, using a laser flash method.

[0091] As a method to make the thermal conductivity of the Si-SiC component 105 at 20°C within the above-mentioned range, one example is to adjust the content of SiC and Si to the above-mentioned range.

[0092] The Young's modulus of the Si-SiC component 105 is preferably 300 to 420 GPa. More preferably, the Young's modulus of the Si-SiC component 105 is 320 GPa or more, even more preferably 350 GPa or more, and particularly preferably 370 GPa or more.

[0093] The Young's modulus of the Si-SiC component 105 is more preferably 410 GPa or less, even more preferably 400 GPa or less, and particularly preferably 390 GPa or less.

[0094] A lower Young's modulus results in higher thermal shock resistance. The Si-SiC component 105 satisfies the aforementioned range in Young's modulus, thus exhibiting improved thermal shock resistance, and is therefore preferred. Furthermore, the Si-SiC component 105 has a lower Young's modulus compared to other silicon carbide ceramics, resulting in higher thermal shock resistance, and is thus preferred.

[0095] The Young's modulus of the Si-SiC component 105 can be measured at 20°C using the elastic modulus test method (ultrasonic pulse method: dynamic elastic modulus) described in the Japanese Industrial Standard (JIS R1602:1995).

[0096] As a method to make the Young's modulus of the Si-SiC component 105 within the above-mentioned range, one example is to adjust the content of SiC and Si to the above-mentioned range.

[0097] The bending strength of the Si-SiC component 105 is preferably 130 to 300 MPa. More preferably, the bending strength of the Si-SiC component 105 is 200 MPa or more, even more preferably 220 MPa or more, and particularly preferably 230 MPa or more.

[0098] The bending strength of the Si-SiC component 105 is more preferably 260 MPa or less, even more preferably 250 MPa or less, and particularly preferably 240 MPa or less.

[0099] By ensuring that the bending strength of the Si-SiC component 105 meets the above-mentioned range, cracking of the Si-SiC component 105 or even the laminated component 100 caused by falling objects can be prevented, thereby improving impact resistance.

[0100] The bending strength of the Si-SiC component 105 can be measured at 20°C using the bending strength test method (4-point bending strength) described in the Japanese Industrial Standard (JIS R1601:2008).

[0101] The Vickers hardness (Hv) of the Si-SiC component 105 is preferably 20 to 27 GPa.

[0102] The Vickers hardness is more preferably 21 GPa or higher, even more preferably 22 GPa or higher, and particularly preferably 23 GPa or higher.

[0103] The Vickers hardness is more preferably 26 GPa or less, even more preferably 25 GPa or less, and particularly preferably 24 GPa or less.

[0104] The scratch resistance of Si-SiC component 105 and even laminated component 100 is improved by making the Vickers hardness of Si-SiC component 105 meet the above range.

[0105] The Vickers hardness of Si-SiC component 105 can be measured at 20°C using a Vickers hardness tester system.

[0106] [Glass components]

[0107] Examples of glass components 101 include soda-lime glass, borosilicate glass, aluminosilicate glass, and alkali-free glass. Alternatively, glass component 101 can be chemically strengthened glass (chemically strengthened glass), physically strengthened glass through methods such as air cooling (physically strengthened glass), or glass that has undergone crystallization treatment (crystallized glass).

[0108] The glass composition of glass component 101 will be described below. It should be noted that the glass composition (content of the object component of the glass component) in this specification is expressed as a mole percentage (mol%) based on oxides.

[0109] Glass component 101 contains SiO2. SiO2 is the main component of glass.

[0110] From the perspective of improving the weather resistance of glass, the SiO2 content is 55.0 mol% or more, preferably 57.0 mol% or more, more preferably 60.0 mol% or more, and particularly preferably 62.0 mol% or more.

[0111] From the viewpoint of improving manufacturability by lowering the melting temperature of the glass, the SiO2 content is 85.0 mol% or less, preferably 83.0 mol% or less, more preferably 80.0 mol% or less, and particularly preferably 78.0 mol% or less.

[0112] Glass component 101 contains Al2O3. By containing Al2O3, the weather resistance of the glass can be improved, and the coefficient of linear expansion can be reduced.

[0113] From the perspective of increasing the Young's modulus of the glass, the content of Al2O3 is 1.5 mol% or more, preferably 3.0 mol% or more, more preferably 5.0 mol% or more, and particularly preferably 8.0 mol% or more.

[0114] From the perspective of improving the acid resistance of the glass, the Al2O3 content is 22.0 mol% or less. Furthermore, from the perspective of suppressing glass devitrification (which lowers the devitrification temperature), suppressing the generation of unmelted material in the raw materials, and suppressing the increase in the glass melting temperature to improve clarity, it is preferably 18.0 mol% or less, more preferably 17.0 mol% or less, and particularly preferably 16.0 mol% or less.

[0115] The glass component 101 contains B2O3. By including B2O3, the coefficient of linear expansion of the glass can be adjusted.

[0116] From the perspective of suppressing the coefficient of linear expansion of glass, the content of B2O3 is 2.0 mol% or more, preferably 3.5 mol% or more, and particularly preferably 5.0 mol% or more.

[0117] From the perspective of improving the weather resistance of the glass, the B2O3 content is 14.0 mol% or less. Furthermore, from the perspective of increasing the Young's modulus of the glass, it is preferably 11.0 mol% or less, more preferably 10.0 mol% or less, even more preferably 8.5 mol% or less, and particularly preferably 7.5 mol% or less.

[0118] Glass component 101 may or may not contain RO. RO represents at least one of MgO, CaO, SrO, and BaO. The content of RO represents the total amount of MgO, CaO, SrO, and BaO.

[0119] From the perspective of lowering the melting temperature of the glass to improve its solubility and control the coefficient of linear expansion, the total content of RO and ZnO is preferably 2.0 mol% or more, more preferably 3.0 mol% or more, even more preferably 4.0 mol% or more, and particularly preferably 5.0 mol% or more.

[0120] From the perspective of lowering the devitrification temperature of the glass to improve manufacturability and control the coefficient of linear expansion, the total content of RO and ZnO is preferably 25.0 mol% or less, more preferably 20.0 mol% or less, even more preferably 16.0 mol% or less, and particularly preferably 15.0 mol% or less.

[0121] To lower the melting temperature of glass and improve its solubility, as well as to control the coefficient of linear expansion, MgO can be included.

[0122] The content of MgO is preferably 1.0 mol% or more, more preferably 2.0 mol% or more, even more preferably 2.5 mol% or more, and particularly preferably 3.0 mol% or more.

[0123] From the perspective of lowering the devitrification temperature of the glass to improve productivity and control the coefficient of linear expansion, the content of MgO is preferably 15.0 mol% or less, more preferably 12.0 mol% or less, even more preferably 10.0 mol% or less, and particularly preferably 9.0 mol% or less.

[0124] To lower the melting temperature of glass and improve its solubility, as well as to control the coefficient of linear expansion, CaO can be included.

[0125] The CaO content is preferably 0.5 mol% or more, and more preferably 1.0 mol% or more.

[0126] The CaO content is preferably 10.0 mol% or less, more preferably 8.0 mol% or less.

[0127] To lower the melting temperature of glass and improve its solubility, as well as to control the coefficient of linear expansion, SrO can be included.

[0128] The content of SrO is preferably 0 mol% or more, more preferably 0.01 mol% or more, and even more preferably 0.1 mol% or more.

[0129] The content of SrO is preferably 5.0 mol% or less, more preferably 3.0 mol% or less, and even more preferably 2.0 mol% or less.

[0130] BaO can be added to lower the melting temperature of glass to increase productivity and control the coefficient of linear expansion.

[0131] The content of BaO is preferably 0 mol% or more, and more preferably 0.01 mol% or more.

[0132] The content of BaO is preferably 3.0 mol% or less, more preferably 2.0 mol% or less.

[0133] It should be noted that BaO, even if not intentionally present, is sometimes mixed in as an impurity from raw materials such as limestone, dolomite, and strontium carbonate, or from manufacturing processes.

[0134] The glass component 101 may or may not contain R2O. R2O represents at least one of Li2O, Na2O, and K2O. The content of R2O represents the total amount of Li2O, Na2O, and K2O.

[0135] R2O is a useful component for promoting the melting of glass raw materials and adjusting the coefficient of linear expansion and melting temperature.

[0136] To achieve the above-mentioned effects, the content of R2O is preferably 0 mol% or more, and more preferably 0.01 mol% or more.

[0137] From the viewpoint of reducing the coefficient of linear expansion of the glass and thus reducing the stress generated by temperature changes, the content of R2O is preferably 15.0 mol% or less, more preferably 10.0 mol% or less, even more preferably 6.0 mol% or less, and particularly preferably 5.0 mol% or less.

[0138] It should be noted that the total amount of R2O, i.e., Na2O and K2O when Li2O is not present is preferably 0 mol% or more, and more preferably 0.01 mol% or more.

[0139] From the perspective of reducing the coefficient of linear expansion, the total amount of R2O, i.e., Na2O and K2O when Li2O is not present is preferably 13.0 mol% or less, more preferably 10.0 mol% or less, even more preferably 5.0 mol% or less, and particularly preferably 3.0 mol% or less.

[0140] Li2O is a useful component for promoting the melting of glass raw materials and adjusting the coefficient of linear expansion and melting temperature.

[0141] The content of Li2O is preferably 0 mol% or more, and more preferably 0.01 mol% or more.

[0142] From the perspective of reducing the coefficient of linear expansion of the glass and thus reducing the stress generated by temperature changes, the content of Li2O is preferably 10.0 mol% or less, more preferably 7.0 mol% or less, even more preferably 5.0 mol% or less, and particularly preferably 4.0 mol% or less.

[0143] Na2O is a useful component for promoting the melting of glass raw materials and adjusting the coefficient of linear expansion and melting temperature.

[0144] The Na2O content is preferably 0 to 13.0 mol.

[0145] The Na2O content is more preferably 0.01 mol% or more.

[0146] The Na2O content is more preferably 10.0 mol% or less, further preferably 5.0 mol% or less, and particularly preferably 3.0 mol% or less.

[0147] If the Na2O content is below 13.0 mol%, the coefficient of linear expansion of the glass can be reduced, thus reducing the stress generated by temperature changes.

[0148] K2O is a useful component for promoting the melting of glass raw materials and adjusting the coefficient of linear expansion and melting temperature.

[0149] The K2O content is preferably 0 mol% or more, and more preferably 0.01 mol% or more.

[0150] From the viewpoint of reducing the coefficient of linear expansion of the glass and thus reducing the stress generated when exposed to high temperatures, the K2O content is preferably 3.0 mol% or less, more preferably 1.0 mol% or less, and even more preferably 0.1 mol% or less.

[0151] The glass component 101 may or may not contain ZrO2. When ZrO2 is present, the glass's resistance to reagents is improved.

[0152] From the perspective of effectively achieving the above-mentioned effects, the ZrO2 content is preferably 0 mol% or more, more preferably 0.01 mol% or more, and even more preferably 0.1 mol% or more.

[0153] From the perspective of lowering the devitrification temperature of the glass and thus improving productivity, the ZrO2 content is preferably 5.0 mol% or less, more preferably 3.0 mol% or less, and even more preferably 2.0 mol% or less.

[0154] The glass component 101 may or may not contain TiO2. When TiO2 is present, the glass's resistance to reagents is improved.

[0155] From the perspective of effectively achieving the above-mentioned effects, the content of TiO2 is preferably 0 mol% or more, more preferably 0.01 mol% or more, and even more preferably 0.1 mol% or more.

[0156] From the perspective of lowering the devitrification temperature of the glass to improve productivity and suppressing unnecessary coloration, the TiO2 content is preferably 5.0 mol% or less, more preferably 3.0 mol% or less, and even more preferably 2.0 mol% or less.

[0157] The glass component 101 may or may not contain P2O5. When P2O5 is present, it can inhibit the crystallization of the glass and stabilize the glass.

[0158] The P2O5 content is 0 mol% or more. Furthermore, considering the ability to effectively achieve the aforementioned effects, it is preferable to have 0.05 mol% or more, and more preferably 0.1 mol% or more.

[0159] From the perspective of stabilizing the glass without causing its melting temperature to become too high and improving its transparency by suppressing phase separation, the P2O5 content is 5.0 mol% or less, preferably 4.0 mol% or less, more preferably 3.5 mol% or less, and particularly preferably 3.0 mol% or less.

[0160] The glass component 101 may or may not contain Fe2O3. When Fe2O3 is present, the clarity of the glass can be improved without compromising its color tone, and the temperature of the bottom material in the melting furnace can be controlled. In addition, the linear transmittance of the glass component 101 at a wavelength of 850 nm can be easily adjusted to the range described later, resulting in a stable product.

[0161] From the perspective of effectively achieving the above-mentioned effects, the Fe2O3 content is preferably 0.0001 mol% or more, more preferably 0.0005 mol% or more, and even more preferably 0.0010 mol% or more.

[0162] From the perspective of maintaining the color tone of the glass, the Fe2O3 content is preferably 0.0115 mol% or less, more preferably 0.0100 mol% or less, even more preferably 0.0080 mol% or less, and particularly preferably 0.0050 mol% or less.

[0163] The glass component 101 may or may not contain ZnO.

[0164] The ZnO content is preferably 0 mol% or more, more preferably 0.01 mol% or more, even more preferably 0.1 mol% or more, and particularly preferably 0.5 mol% or more.

[0165] From the perspective of improving productivity by lowering the devitrification temperature of the glass, the ZnO content is preferably 15.0 mol% or less, more preferably 12.0 mol% or less, even more preferably 10.0 mol% or less, and particularly preferably 8.0 mol% or less.

[0166] The glass component 101 may contain other components besides those mentioned above (e.g., TiO2, Y2O3, Gd2O3, etc.) as long as it does not impair the effect of the present invention.

[0167] The total content of other components is preferably 10.0 mol% or less.

[0168] Glass component 101 may contain appropriate amounts of sulfates, chlorides, fluorides, halides, hydroxides, SnO2, Sb2O3, As2O3, etc., as clarifying agents during glass melting.

[0169] Furthermore, it may contain coloring components such as Ni, Co, Cr, Mn, V, Se, Au, Ag, and Cd to adjust the hue.

[0170] In addition, if you want to actively color it, you can include coloring components such as Fe, Ni, Co, Cr, Mn, V, Se, Au, Ag, and Cd in the range of 0.0001 mol% or more.

[0171] It should be noted that when the other components mentioned above contain at least one selected from sulfates, chlorides, fluorides, halides, hydroxides, SnO2, Sb2O3 and As2O3, from the viewpoint of clarification, the total content of these components is preferably 0.01 mol% or more, more preferably 0.02 mol% or more, and even more preferably 0.05 mol% or more.

[0172] From the perspective of not affecting the properties of the glass, the total content of these components is preferably 5.0 mol% or less, more preferably 2.0 mol% or less, and even more preferably 1.0 mol% or less.

[0173] SiO2, Al2O3, B2O3, and P2O5 are the network-forming components (network forgings) of glass.

[0174] From the perspective of improving the stability and chemical weather resistance of the glass structure, the total content of SiO2, Al2O3, B2O3 and P2O5 in the glass component 101 is 70.0 mol% or more, preferably 75.0 mol% or more, more preferably 78.0 mol% or more, and particularly preferably 80.0 mol% or more.

[0175] From the perspective of suppressing the increase of glass melting temperature and improving clarity, the total content of SiO2, Al2O3, B2O3 and P2O5 is 97.0 mol% or less, preferably 95.0 mol% or less, more preferably 93.0 mol% or less, and particularly preferably 90.0 mol% or less.

[0176] A preferred composition of the glass component 101 includes 55.0–85.0 mol% SiO2, 1.5–14.5 mol% Al2O3, 3.0–14.0 mol% B2O3, and 0–3.5 mol% P2O5, wherein the total content of SiO2, Al2O3, B2O3, and P2O5 in the glass component 101, expressed as a molar percentage based on oxides, is 70.0–97.0%. This results in superior glass properties.

[0177] The thickness of the glass component 101 is not particularly limited, as long as it is sufficient to support the thickness of the Si-SiC component 105. Specifically, the thickness of the glass component 101 is preferably 2 to 40 mm.

[0178] The thickness of the glass component 101 is more preferably 3 mm or more, further preferably 5 mm or more, particularly preferably 10 mm or more, and most preferably 15 mm or more.

[0179] The thickness of the glass component 101 is more preferably 35 mm or less, further preferably 30 mm or less, and particularly preferably 25 mm or less.

[0180] If the thickness of the glass component 101 is within the aforementioned range, it can maintain sufficient strength to serve as a supporting component.

[0181] The thickness of the glass component 101 can be measured, for example, using a vernier caliper or a digital measuring instrument.

[0182] The average linear expansion coefficient β of the glass component 101 from 20 to 200°C is 1.50 to 5.00 ppm / °C. Hereinafter, the average linear expansion coefficient β of the glass component 101 from 20 to 200°C will also be referred to as the average linear expansion coefficient β.

[0183] The average linear expansion coefficient β is preferably 2.00 ppm / ℃ or higher, more preferably 2.50 ppm / ℃ or higher, and particularly preferably 2.60 ppm / ℃ or higher.

[0184] The average linear expansion coefficient β is preferably 3.50 ppm / ℃ or less, more preferably 3.25 ppm / ℃ or less, even more preferably 3.10 ppm / ℃ or less, and particularly preferably 3.00 ppm / ℃ or less.

[0185] If the average linear expansion coefficient β of the glass component 101 is within the above range, it is easy to make the average linear expansion coefficient of the glass component 101 consistent with that of the Si-SiC component 105, and it is possible to reduce the strain generated inside the glass when the temperature difference is formed inside the glass component as β becomes smaller.

[0186] The average linear expansion coefficient β can be measured using a dilatometer or thermomechanical analyzer with the measurement temperature range set to 20℃~200℃.

[0187] The absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component 101 from the average linear expansion coefficient α of the Si-SiC component 105, |α-β|, is 2.00 ppm / ℃ or less. The absolute value |α-β| is preferably 1.00 ppm / ℃ or less, more preferably 0.50 ppm / ℃ or less, and particularly preferably 0.30 ppm / ℃ or less.

[0188] By making the absolute value |α-β| below the above value, warping of the resulting laminated component 100 can be prevented.

[0189] For the Si-SiC component 105 and the glass component 101, the thermal conductivity of Si-SiC is higher than that of glass, thus creating a temperature difference during use. In particular, during cooling, tensile stress acts on the glass surface opposite to the bonding layer, making the glass prone to cracking. Therefore, the average linear expansion coefficient β of the glass component 101 is preferably smaller than the average linear expansion coefficient α of the Si-SiC component 105.

[0190] The linear transmittance of the glass component 101 at a wavelength of 850 nm is 80% or more, preferably 85% or more, more preferably 88% or more, and even more preferably 90% or more. If the linear transmittance of the glass component 101 at a wavelength of 850 nm is 80% or more, sufficient infrared radiation can be transmitted for heating.

[0191] The upper limit of the linear transmittance of the glass component 101 is 100%.

[0192] Linear transmittance refers to the transmittance of light that passes through the glass component 101 in a straight line along the thickness direction when the incident angle of the incident light is set to 0°. It can be measured using a spectrophotometer at 20°C.

[0193] As a method to achieve a linear transmittance of the glass component 101 within the aforementioned range, examples include adjusting the Fe2O3 content in the glass component 101 to the aforementioned range and forming an antireflective film to suppress surface reflection of the glass component 101. As a method for forming the antireflective film, generally known methods such as wet coating methods based on spraying, spin coating, or flow coating, and dry coating methods based on sputtering or vapor deposition can be used.

[0194] The Young's modulus of the glass component 101 is preferably 40 to 120 GPa.

[0195] The Young's modulus of the glass component 101 is more preferably 60 GPa or more, even more preferably 65 GPa or more, and particularly preferably 70 GPa or more.

[0196] The Young's modulus of the glass component 101 is more preferably 100 GPa or less, even more preferably 95 GPa or less, and particularly preferably 90 GPa or less.

[0197] If the Young's modulus of the glass component 101 is within the above range, it can maintain sufficient strength as a supporting component and reduce warping.

[0198] The Young's modulus of glass component 101 can be measured at 20°C using the ultrasonic pulse method as described in Japanese Industrial Standard (JIS R1602:1995).

[0199] The melting temperature of the glass component 101 is preferably 1000 to 2000°C.

[0200] The melting temperature of the glass component 101 is more preferably 1300°C or higher, even more preferably 1400°C or higher, and particularly preferably 1500°C or higher.

[0201] The melting temperature of the glass component 101 is more preferably below 1900°C, further preferably below 1800°C, and particularly preferably below 1700°C.

[0202] If the melting temperature of the glass component 101 is within the above range, the clarity of the glass and the solubility of the raw materials are excellent, and defects in the glass can be suppressed.

[0203] The melting temperature of glass component 101 is shown as 10, determined by measuring viscosity using a rotational viscometer. 2 Temperature T2 (°C) at dPa•s.

[0204] The devitrification temperature of the glass component 101 is preferably 800 to 1600°C.

[0205] The devitrification temperature of the glass component 101 is more preferably 900°C or higher, even more preferably 1000°C or higher, and particularly preferably 1100°C or higher.

[0206] The devitrification temperature of the glass component 101 is more preferably below 1500°C, further preferably below 1450°C, and particularly preferably below 1400°C.

[0207] If the devitrification temperature of glass component 101 is within the above range, fewer defects will be generated during glass manufacturing.

[0208] The devitrification temperature of glass component 101 refers to the maximum temperature at which no crystals precipitate on the glass surface and inside the glass after the pulverized glass particles are placed in a platinum dish and heat-treated in an electric furnace at a controlled temperature for 17 hours, and observed through an optical microscope after the heat treatment.

[0209] [Joint Layer]

[0210] The bonding layer 103 is a component that bonds the glass component 101 to the Si-SiC component 105.

[0211] Examples of resins included in the bonding layer 103 include epoxy resin, silicone resin, fluoropolymer resin, and polyimide resin. From the perspective of superior heat resistance, epoxy resin, silicone resin, and fluoropolymer resin are preferred.

[0212] One type of resin can be used alone or in combination with two or more types.

[0213] The resin content relative to the total mass of the bonding layer 103 is preferably 40 to 100% by mass, more preferably 50 to 90% by mass, and even more preferably 60 to 80% by mass.

[0214] If the resin content is within the above range, the glass component 101 obtained through the bonding layer 103 and the Si-SiC component 105 can have better adhesion, and the difference in the coefficient of thermal expansion between them can be reduced.

[0215] The bonding layer 103 may or may not contain components other than resin (hereinafter also referred to as "other components"). Specific examples of other components include plasticizers, fillers, etc.

[0216] When the bonding layer 103 contains other components, the content of the other components relative to the total mass of the bonding layer 103 is preferably 10 to 50% by mass, more preferably 20 to 40% by mass, and even more preferably 25 to 35% by mass. If the content of the other components is less than 50% by mass, the adhesion between the glass component 101 and the Si-SiC component 105 obtained through the bonding layer 103 is even better.

[0217] The bonding layer 103 may also be composed of a resin film, a coating adhesive, etc.

[0218] When the bonding layer 103 is composed of a resin film, it can be fabricated, for example, using a hot press. The resin film constituting the bonding layer 103 is sandwiched between the glass component 101 and the Si-SiC component 105 (this configuration is considered a temporary laminate). The temporary laminate is heated to a temperature above the softening point of the resin film, and pressure is applied to the temporary laminate to bond the glass component 101 and the Si-SiC component 105. To prevent air bubble entrapment during bonding, it is preferable to pressurize the temporary laminate under a vacuum atmosphere.

[0219] In addition, when the bonding layer 103 is made of a coating adhesive, it is coated on the glass component 101 using any conventionally known method, and the Si-SiC component 105 is stacked on it.

[0220] To improve the anchoring effect, the contact surfaces of the glass component 101 and the bonding layer 103, and the contact surfaces of the Si-SiC component 105 and the bonding layer 103, can be appropriately roughened by sandblasting or other methods.

[0221] The thickness of the bonding layer 103 is preferably 0.001 to 0.300 mm.

[0222] The thickness of the bonding layer 103 can be greater than 0.005 mm, greater than 0.008 mm, or greater than 0.010 mm.

[0223] The thickness of the bonding layer 103 can be less than 0.150 mm, less than 0.050 mm, or less than 0.030 mm.

[0224] The thickness of the bonding layer 103 can be calculated using digital data and image processing software based on SEM cross-sectional observation.

[0225] The linear transmittance of the bonding layer 103 at a wavelength of 850 nm is preferably 88% or more, more preferably 91% or more, even more preferably 93% or more, and particularly preferably 95% or more. If the linear transmittance of the bonding layer 103 is 88% or more, sufficient infrared radiation transmittance for heating can be obtained.

[0226] The upper limit of the linear transmittance of the bonding layer 103 is 100%.

[0227] Linear transmittance refers to the transmittance of light that passes through the bonding layer 103 in a straight line in the thickness direction when the incident angle of the incident light is set to 0°. It can be measured using a spectrophotometer at 20°C.

[0228] The heat resistance temperature of the resin contained in the bonding layer 103 is preferably 120 to 420°C. Furthermore, considering the mitigation of stress during high-temperature use, it is more preferably 120 to 300°C.

[0229] The heat resistance temperature of the resin contained in the bonding layer 103 is further preferably 140°C or higher, particularly preferably 160°C or higher, and most preferably 180°C or higher.

[0230] The heat resistance temperature of the resin contained in the bonding layer 103 can be below 280°C, below 260°C, or below 240°C.

[0231] The heat resistance temperature of the resin contained in the bonding layer 103 refers to the temperature at which the mass of the object decreases by 1% under atmospheric conditions through thermogravimetric analysis (TGA).

[0232] The average linear expansion coefficient γ of the bonding layer 103 at 20 to 200°C is preferably 2 to 200 ppm / °C. Hereinafter, the average linear expansion coefficient γ of the bonding layer 103 at 20 to 200°C will also be referred to simply as the average linear expansion coefficient γ.

[0233] The average linear expansion coefficient γ is more preferably 4 ppm / ℃ or more, even more preferably 7 ppm / ℃ or more, and particularly preferably 10 ppm / ℃ or more.

[0234] The average linear expansion coefficient γ is more preferably 100 ppm / ℃ or less, further preferably 50 ppm / ℃ or less, particularly preferably 30 ppm / ℃ or less, and most preferably 20 ppm / ℃ or less.

[0235] If the average linear expansion coefficient γ of the bonding layer 103 is within the above range, the adhesion is excellent and the difference in expansion coefficient with the Si-SiC component is reduced, thus the thermal shock resistance of the laminated component 100 is excellent.

[0236] The average linear expansion coefficient γ can be measured using a dilatometer or thermomechanical analyzer with the measurement temperature range set to 20℃~200℃.

[0237] As a method to make the average linear expansion coefficient γ of the bonding layer 103 within the above-mentioned range, an example is to use the above-mentioned type of resin and combine it with fillers such as carbon and silicon dioxide.

[0238] When a resin film is used in the fabrication of the bonding layer 103, the Young's modulus of the resin film is preferably 0.05 GPa or more, more preferably 0.10 GPa or more, and even more preferably 0.15 GPa or more, in order to improve the adhesion between the Si-SiC component 105 and the glass component 101 and maintain the overall shape of the component.

[0239] When a resin film is used in the fabrication of the bonding layer 103, the Young's modulus of the resin film is preferably 3.5 GPa or less, more preferably 3.0 GPa or less, even more preferably 2.0 GPa or less, particularly preferably 1.0 GPa or less, and most preferably 0.5 GPa or less, in terms of reducing stress caused by the difference in the coefficient of thermal expansion with the Si-SiC component.

[0240] For stress caused by the difference in expansion coefficients with Si-SiC components, the higher the Young's modulus of the resin layer, the higher the stress; if the Young's modulus decreases, the stress decreases.

[0241] The Young's modulus of the resin layer can be measured at 25°C using the elastic modulus test method described in Japanese Industrial Standard (JIS K7171).

[0242] [Physical properties of stacked components, etc.]

[0243] The warpage of the laminated component 100 is preferably 0.25 mm or less, more preferably 0.20 mm or less, even more preferably 0.10 mm or less, and particularly preferably 0.05 mm or less.

[0244] If the warpage of the laminated component 100 is below the aforementioned value, stress concentration at specific locations can be prevented when stress is generated, thus further improving impact resistance. Furthermore, when the laminated component 100 is installed for kitchen applications, warpage of the laminated component 100 can prevent deformation of surrounding surfaces and avoid negatively impacting the aesthetics of the laminated component 100. Additionally, when a heated object is placed on the laminated component 100, it can prevent the heated object from wobbling.

[0245] The lower limit of the warpage of the stacked component 100 is 0 mm.

[0246] The warpage of the stacked component 100 can be measured using a non-contact three-dimensional shape measuring device.

[0247] As a method to make the warpage of the laminated component 100 within the above-mentioned range, the thickness of the glass component 101, the bonding layer 103 and the Si-SiC component 105, the type and content of the components constituting each component (layer) can be described as above.

[0248] The density of the laminated component 100 is preferably 2.40 to 2.85 g / cm³. 3 .

[0249] The density of the laminated component 100 is more preferably 2.45 g / cm³. 3 The above is further preferred to be 2.50 g / cm³. 3 The above, especially preferred, is 2.55 g / cm³. 3 above.

[0250] The density of the laminated component 100 is more preferably 2.80 g / cm³. 3 The following is a further preferred value: 2.75 g / cm³ 3 The following is particularly preferred: 2.70 g / cm³ 3 the following.

[0251] If the density is within the above range, the workability is improved when the laminated components are assembled into the housing as heating components.

[0252] Density is a value obtained by dividing the total mass of the laminated components 100 by the total volume of the laminated components 100. The total mass of the laminated components 100 can be measured using a mass measuring instrument. The total volume of the laminated components 100 can be measured using a digital measuring instrument.

[0253] As a method to make the density of the laminated component 100 within the above-mentioned range, examples include making the thickness of the glass component 101, the bonding layer 103 and the Si-SiC component 105, the type and content of the components constituting each component (layer) as described above.

[0254] The area of ​​the uppermost surface of the Si-SiC component 105 side of the stacked component 100 (the main surface of the Si-SiC component 105 side of the stacked component 100) is preferably 0.01 to 10 μm². 2 .

[0255] The area of ​​the uppermost surface of the stacked component 100 is more preferably 0.07m². 2 The above is further preferred to be 0.15m. 2 The above, especially preferred, is 0.30m. 2 The optimal value is 0.60m. 2 above.

[0256] The area of ​​the uppermost surface of the stacked component 100 is more preferably 8m². 2 Hereinafter, 4m is further preferred. 2 The following is particularly preferred: 2m 2 The optimal value is 1m. 2 the following.

[0257] If the area of ​​the uppermost surface of the stacked component 100 is within the above range, the workability is improved when it is installed in the housing as a heating component.

[0258] The area of ​​the uppermost surface is calculated by measuring the dimensions of the stacked component 100 using a digital measuring instrument.

[0259] [Manufacturing method of stacked components]

[0260] As an example of a method for manufacturing the laminated component 100, a method is given in which a bonding layer 103 is disposed between a glass component 101 and a Si-SiC component 105 and the glass component 101 and the Si-SiC component 105 are bonded together through the bonding layer 103.

[0261] As an example of a more detailed manufacturing method of the laminated component 100, a method is given in which a glass component 101, a bonding layer 103 and a Si-SiC component 105 are sequentially laminated and then bonded at a temperature of 150 to 380°C.

[0262] [Another way]

[0263] An example of the stacked component of the present invention and another type of stacked component (hereinafter also referred to as "another type of stacked component") that is different from the stacked component 100 described above will be described.

[0264] Another type of stacked component further includes: a second bonding layer disposed on the Si-SiC component 105, and a second Si-SiC component bonded to the Si-SiC component 105 through the second bonding layer.

[0265] The second Si-SiC component is constructed in the same way as the Si-SiC component 105 described above, so its description is omitted.

[0266] By fabricating a structure that includes a Si-SiC component 105 and a second Si-SiC component, it is easy to manufacture stacked components with complex shapes. For example, when providing space for inserting a temperature measuring sensor in a stacked component, one of the Si-SiC component 105 and the second Si-SiC component is pre-grooved and fitted with the other, thereby making it easy to provide space in the stacked component.

[0267] The method for bonding the Si-SiC component 105 to the second Si-SiC component using the second bonding layer is not particularly limited. Examples include bonding using resins such as epoxy resin and fluororesin, bonding using molten metals such as tin and indium, and bonding using glass frit. Assuming that the laminated component is used as a heating component, considering heat resistance and thermal conductivity, bonding with metal is preferred.

[0268] Considering heat resistance and thermal conductivity, glass frits have high heat resistance but low thermal conductivity, while resins also have low heat resistance and thermal conductivity. Therefore, metal bonding is preferred. Specific examples of metals include indium, tin, tin alloys, and lead alloys. Among these, considering thermal conductivity, heat resistance, and environmental impact, tin metal and tin alloys are preferred.

[0269] An example of bonding using molten metal will be described. The Si-SiC component 105 and the second Si-SiC component are heated to a desired temperature, for example, 250°C to 270°C. While irradiating the bonding surfaces of the heated Si-SiC component and the second Si-SiC component with ultrasonic waves, metal pre-molten at a temperature near the desired temperature (e.g., 250°C to 270°C) is applied, and the bonding surfaces are then overlapped.

[0270] Another type of laminated component may further include: a third bonding layer disposed on the second Si-SiC component, and a third Si-SiC component bonded to the second Si-SiC component via the third bonding layer. The third bonding layer is configured similarly to the second bonding layer. Additionally, the third Si-SiC component is configured similarly to Si-SiC component 105. However, in this alternative type of laminated component, it is preferable to omit the third bonding layer and the third Si-SiC component in terms of thickness.

[0271] The laminated component of the present invention may have a configuration that enables rapid cooling of the laminated component.

[0272] For example, the laminated component 100 may have flow paths between at least one of the glass component 101 and the bonding layer 103, and between the Si-SiC component 105 and the bonding layer 103. Alternatively, the laminated component 100 may be fabricated such that at least one of the glass component 101 and the Si-SiC component 105 constitutes a flow path.

[0273] Alternatively, in another embodiment, the laminated component may have flow paths between at least one of the glass component 101 and the bonding layer 103, between the Si-SiC component 105 and the bonding layer 103, between the Si-SiC component 105 and the second bonding layer, and between the second Si-SiC component and the second bonding layer. Alternatively, in another embodiment, the laminated component may be fabricated such that at least one of the glass component 101, the Si-SiC component 105, and the second Si-SiC component forms a flow path.

[0274] Stacked components allow water to flow through the flow path for cooling.

[0275] The laminated component of the present invention can have an anti-reflective film that improves transmittance and irradiation efficiency.

[0276] For example, the laminated component 100 may have an anti-reflective film on the main surface of the glass component 101 opposite to the bonding layer 103 side and / or on the main surface of the glass component 101 on the bonding layer 103 side.

[0277] Alternatively, in another configuration, the laminated component may have an anti-reflective film on the main surface of the bonding layer 103 side of the Si-SiC component 105 or on the main surface of the second bonding layer side of the second Si-SiC component.

[0278] Anti-reflective films can improve irradiation efficiency (heating efficiency) by being applied to the infrared-transmitting surface.

[0279] The stacked component of the present invention may include a temperature sensor.

[0280] For example, the stacked component 100 may have a temperature sensor inside the Si-SiC component 105. Alternatively, the stacked component may have a temperature sensor inside the Si-SiC component 105 or inside the second Si-SiC component.

[0281] As a specific example of a configuration incorporating a temperature sensor, a configuration in which a temperature sensor is inserted into a hole in the side of the Si-SiC component 105 or the second Si-SiC component. In this case, the temperature sensor is positioned directly below the main surface of the Si-SiC component 105 on the side opposite to the bonding layer 103, or directly below the main surface of the second Si-SiC component on the side opposite to the second bonding layer. The temperature sensor is configured in such a way that it does not contact the bonding layer 103 or the second bonding layer and is not exposed. The temperature sensor can be used to measure the temperature of the main surface of the Si-SiC component 105 on the side opposite to the bonding layer 103, or the main surface of the second Si-SiC component on the side opposite to the second bonding layer.

[0282] The laminated component of the present invention can preferably be used as a heating component. For example, the laminated component of the present invention can preferably be used as a heating component of a cooking appliance.

[0283] In addition, the laminated component of the present invention can also be used as a kitchen countertop (top panel).

[0284] In addition, the laminated component of the present invention can also be used as a material for a platform for placing electronic devices in an inspection apparatus or test apparatus used for electrical testing of electronic devices.

[0285] In addition, the laminated component of the present invention can also function as a heating cooker, an inspection device for electrical testing of electronic equipment, a top plate of a testing device, and a kitchen countertop.

[0286] [Glass composition]

[0287] One aspect of the glass composition of the present invention is characterized in that it is used in a laminated component comprising a glass component, a resin-containing bonding layer on the glass component, and a Si-SiC component on the bonding layer, wherein the glass composition has a linear transmittance of 80% or more at a wavelength of 850 nm, and the glass composition, expressed as a molar percentage based on oxides, comprises 55.0 to 85.0 mol% SiO2, 1.5 to 22.0 mol% Al2O3, 2.0 to 14.0 mol% B2O3, and 0 to 5.0 mol% P2O5, wherein the SiO2, Al2O3, and P2O5 are present in a relatively uniform manner. The total content of B2O3 and P2O5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%. The average coefficient of linear expansion β of the glass composition at 20 to 200°C is 1.50 to 5.00 ppm / °C. The glass composition is used in a laminated component of a Si-SiC component having an average coefficient of linear expansion α at 20 to 200°C of 2.85 to 4.00 ppm / °C, and is used in such a manner that the absolute value of the value obtained by subtracting the average coefficient of linear expansion β of the glass component at 20 to 200°C from the average coefficient of linear expansion α of the Si-SiC component at 20 to 200°C, |α - β|, is 2.00 ppm / °C or less.

[0288] Another aspect of the glass composition of the present invention is characterized in that, when expressed as a molar percentage based on oxides, it comprises 55.0 to 85.0 mol% SiO2, 1.5 to 22.0 mol% Al2O3, 2.0 to 14.0 mol% B2O3, and 0 to 5.0 mol% P2O5, the total content of the above-mentioned SiO2, Al2O3, B2O3, and P2O5 when expressed as a molar percentage based on oxides is 70.0 to 97.0%, the average coefficient of linear expansion β at 20 to 200°C is 1.50 to 5.00 ppm / °C, and the linear transmittance at a wavelength of 850 nm is 80% or more.

[0289] The glass composition described above can preferably be used as a glass component constituting the laminated component described above. By using the glass composition described above as a glass component constituting the laminated component, the laminated component exhibits excellent temperature rise resistance, impact resistance, and thermal shock resistance.

[0290] It should be noted that the glass composition and various physical properties of the above-described glass composition can be applied to the glass components of the laminated components of the present invention. It should also be noted that the linear transmittance at a wavelength of 850 nm in the above-described glass composition refers to the value measured when the glass composition is manufactured into a glass component.

[0291] Furthermore, in a laminated component having a glass component obtained using the above-described glass composition, the above description relating to the glass component of the laminated component can also be applied to the bonding layer and Si-SiC component constituting the laminated component.

[0292] Example

[0293] Hereinafter, one aspect of the present invention will be described with reference to an embodiment, but the present invention is not limited thereto.

[0294] [Glass components]

[0295] The manufactured glass is shown in Tables 1 and 2.

[0296] [Table 1]

[0297]

[0298] [Table 2]

[0299]

[0300] [The order of glassmaking]

[0301] The glasses (i-A) to (v) and (vii) to (xxix) in Tables 1 and 2 are prepared as follows, with each glass composition expressed as a molar percentage of the oxides shown in Tables 1 and 2. It should be noted that blank columns in Tables 1 and 2 indicate the absence of that component.

[0302] First, select appropriate commonly used glass raw materials such as oxides, hydroxides, carbonates, sulfates, halides, or nitrates, and weigh them to achieve a glass volume of 10,000g. Next, place the mixed raw materials into a platinum crucible and melt them in a resistance-heated electric furnace at 1500–1700℃ for approximately 12 hours to remove bubbles and homogenize. The resulting molten glass is then poured into a mold and held at the glass transition temperature +50℃ for 1 hour, followed by cooling to room temperature at a rate of 0.5℃ / min to obtain a glass block.

[0303] The glass in Table 1 (vi) is synthetic quartz glass (product name: AQ) manufactured by AGC Corporation.

[0304] The obtained glass blocks are cut and then ground and polished to obtain glass components (300mm long and 300mm wide).

[0305] [Physical properties of glass components]

[0306] The obtained glass components were subjected to the following measurements. The results are shown in Tables 1 and 2.

[0307] The thickness was measured using a digital measuring instrument at 20°C.

[0308] The average coefficient of linear expansion β was measured using a high-precision thermal dilatometer, the "DIL402 Expedis," manufactured by NETZSCH, within a temperature range of 20°C to 200°C. It should be noted that the glass in (xi) of Table 1 is cloudy due to phase separation, indicating it is unsuitable for use as a glass component; therefore, the average coefficient of linear expansion β was not measured.

[0309] Linear transmittance was measured using a spectrophotometer at 20°C and a wavelength of 850 nm.

[0310] It should be noted that the glass in (xi) of Table 1 is cloudy due to phase separation, indicating that the linear transmittance is less than 80%, therefore the linear transmittance was not measured.

[0311] Young's modulus was measured at 20°C using the ultrasonic pulse method as described in Japanese Industrial Standard (JIS R1602:1995). It should be noted that the glass in (xi) of Table 1 was cloudy due to phase separation, indicating it was unsuitable for use as a glass component; therefore, Young's modulus was not measured for it.

[0312] Melting temperature (T2) indicates the viscosity measured using a rotational viscometer to reach 10. 2 Temperature T2 (°C) at dPa•s.

[0313] It should be noted that the melting temperatures (T2) of the glasses in (iv) and (v) of Table 1 could not be measured in practice, and were therefore calculated using the extrapolation method. The glass in (vi) could not be measured using a rotational viscometer due to its excessively high viscosity.

[0314] The devitrification temperature is the maximum temperature (°C) at which no crystals precipitate on or inside the glass surface, obtained by placing pulverized glass particles into a platinum dish and heat-treating them in an electric furnace at a controlled temperature for 17 hours, followed by observation under an optical microscope after the heat treatment. It should be noted that the glass in (xi) of Table 1 was cloudy due to phase separation and could not be used as a glass component; therefore, its devitrification temperature was not measured.

[0315] Density was determined using the Archimedes method.

[0316] Phase separation is evaluated by observing the glass component using SEM (scanning electron microscope). Cases where phase separation is not visible are rated as "○", and cases where phase separation is visible are rated as "×".

[0317] [Si-SiC components]

[0318] The fabricated Si-SiC components are shown in Table 3.

[0319] [Table 3]

[0320]

[0321] [The manufacturing sequence of Si-SiC components]

[0322] The Si-SiC components (a-1) to (a-3) are fabricated as follows.

[0323] α-SiC powder A1 was classified using a 325-mesh sieve to obtain α-SiC powder A2 (maximum particle size 44 μm, average particle size 8 μm). α-SiC powder A2 was washed with a mixture of acid (hydrofluoric acid:nitric acid = 2:1 (mass ratio)) and pure water to obtain α-SiC powder A3 (iron content 2.1 ppm by mass). α-SiC powder A3, pure water, and acrylic resin emulsion (binder) were mixed to obtain a slurry (solids concentration approximately 75% by mass).

[0324] Next, the slurry is poured into a plaster mold to obtain a molded body (320mm × 320mm × 16mm). The molded body is dried at 50°C for 14 days, then calcined at 1900°C in an electric furnace with an inert argon atmosphere to obtain a sintered body. The porosity of the sintered body is 18.2%.

[0325] Next, the sintered body A1 was transferred to another electric furnace, and high-purity silicon was hot-dipped into the sintered body A1 under vacuum at 1500°C to obtain a Si-SiC component in which all pores were filled with high-purity silicon. The iron content contained in the Si-SiC component was 2.2 ppm.

[0326] Next, the Si-SiC components are processed to a length of 30cm, a width of 30cm, and a thickness as shown in Table 3, to obtain Si-SiC components (a-1) to (a-3).

[0327] The Si-SiC component (b) is made in the same manner as the Si-SiC component (a-1), except that the concentration of solids in the mud is changed to approximately 79% by mass.

[0328] The Si-SiC component (c) is made in the same manner as the Si-SiC component (a-1), except that the concentration of solids in the slurry is changed to approximately 61% by mass.

[0329] The Si-SiC component (d) is fabricated as follows.

[0330] The following ingredients were added to a mixer (Miyazaki Iron Works Co., Ltd., model: MP100): 48.2% by mass of SiC powder (Pacific Random Co., Ltd., model: GMF-12S (average particle size 0.7μm)), 25.0% by mass of silicon powder (Yamaishi Metal Co., Ltd., model: No.700 (average particle size 2.5μm)), 5.5% by mass of Metrolose (Shin-Etsu Chemical Co., Ltd., model: SM8000) as a binder, and 21.5% by mass of pure water. The mixture was then kneaded for 6 hours to obtain clay.

[0331] The obtained soil was fed into an extrusion molding machine (manufactured by Miyazaki Iron Works Co., Ltd., model: FM100) and extruded at a die head pressure of 1.0 MPa and a discharge rate of 1200 g / min to obtain a molded body. The obtained molded body was dried at 50°C for 14 days and then degreased by heating at 450°C in an atmospheric atmosphere for 3 hours to obtain a degreased body.

[0332] The resulting defatted body was calcined in a carbon furnace at 10°C. －3 The sintered body was obtained by calcination at 1700°C for 2 hours under a vacuum atmosphere of Pa.

[0333] Si was incorporated into the obtained sintered body under an argon atmosphere at 1500℃ to obtain a Si-SiC component. The obtained Si-SiC component was processed to a thickness of 30cm in length and 30cm in width, as shown in Table 3, to obtain Si-SiC component (d).

[0334] The Si-SiC component (e) is made in the same manner as the Si-SiC component (a-1), except that the concentration of solids in the mud is changed to about 77% by mass.

[0335] The Si-SiC component (f) is made in the same manner as the Si-SiC component (a-1), except that the concentration of solids in the mud is changed to approximately 58% by mass.

[0336] [Physical properties of Si-SiC components]

[0337] The obtained Si-SiC components (a-1) to (f) were subjected to the following measurements. The results are shown in Table 3.

[0338] The composition of Si-SiC components was determined using an inductively coupled plasma mass spectrometer (ICP-MS) manufactured by Shimadzu Corporation.

[0339] The thickness was measured at 20°C using a vernier caliper (AD-5764A) manufactured by A&D Corporation.

[0340] The average linear expansion coefficient α was measured using a differential thermal dilatometer (TMA) "TMA4000SA" manufactured by Bruker AXS in the temperature range of 20°C to 200°C.

[0341] Thermal conductivity was measured at 20°C using a laser flash thermophysical property measuring device “MODELLFA-502” manufactured by Kyoto Electronics Industries, Ltd.

[0342] Young's modulus was measured at 20°C using an AUTOCOM AC-300KN universal testing machine manufactured by TSE Co., Ltd., according to the elastic modulus test method (dynamic elastic modulus method) described in Japanese Industrial Standard (JIS R1602:1995).

[0343] Bending strength was measured at 20°C using an AUTOCOM universal testing machine “AC-300KN” manufactured by TSE Co., Ltd., according to the bending strength test method (4-point bending strength) described in Japanese Industrial Standard (JIS R1601:2008).

[0344] Vickers hardness was measured using a Vickers hardness tester system (manufactured by Nippon Steel & Sumitomo Metal Technologies Co., Ltd.) with an indentation load of 10 kgf for 15 seconds at 20°C.

[0345] [Bonding Layer]

[0346] The following measurements were performed on each of the resins (resin films, coating adhesives) shown in Table 4. The results are shown in Table 4.

[0347] In Table 4, the fluoropolymer resin used is EA-2000 (resin film) manufactured by AGC Corporation, the epoxy resin used is TB2237J (coating adhesive) manufactured by ThreeBond Corporation, and the polyimide resin used is KPI-MX300F (resin film) manufactured by Kawamura Industries, Ltd.

[0348] It should be noted that since epoxy resin is a coating adhesive, the following tests were performed in a sheet-like state.

[0349] [Table 4]

[0350]

[0351] The thickness was measured using a digital measuring instrument.

[0352] Linear transmittance was measured using a spectrophotometer at 20°C and a wavelength of 850 nm.

[0353] The heat resistance temperature is the temperature at which the mass of a resin film or coating adhesive decreases by 1% under atmospheric conditions during thermogravimetric analysis (TGA).

[0354] The average linear expansion coefficient γ was measured using a differential thermal dilatometer (TMA4000SA) manufactured by Bruker AXS in the temperature range of 20°C to 200°C.

[0355] It should be noted that the average linear expansion coefficient γ of the resin film and coating adhesive is the same as the average linear expansion coefficient γ of the bonding layer described later obtained using the resin film and coating adhesive.

[0356] Young's modulus was measured at 25°C using a universal testing machine (model 5966) manufactured by Instron and following the test method for elastic modulus as described in Japanese Industrial Standard (JISK7171).

[0357] [Layered components]

[0358] The fabricated stacked components are shown in Tables 5 to 7.

[0359] [Table 5]

[0360]

[0361] [Table 6]

[0362]

[0363] [Table 7]

[0364]

[0365] [Production order]

[0366] Samples (layered components) of Examples 1-14 and 18-43 were prepared in the manner described in Tables 5-7, with each component forming the combination shown in Tables 5-7. Samples of Examples 15-17 were also prepared.

[0367] Examples 1-5, 7, 9-13, 20-24, and 26-43 are examples, and examples 6, 8, 14-19, and 25 are comparative examples.

[0368] First, using SiC polishing paper, the surface of the glass components shown in Tables 1 and 2 that is in contact with the resin (bonding layer) is machined to a surface roughness of Ra = 0.2 μm. Similarly, using SiC polishing paper, the surface of the Si-SiC component shown in Table 3 that is in contact with the resin (bonding layer) is machined to a surface roughness of Ra = 0.2 μm.

[0369] Next, the resin film shown in Table 4 is sandwiched between the glass component and the Si-SiC component, heated to a temperature 20 degrees Celsius above the softening point of the resin film, and pressurized at 2 MPa for 5 minutes, thereby bonding the glass component and the Si-SiC component through an adhesive layer. Alternatively, using Dispenser ND type manufactured by Hyoshin Co., Ltd., the coating adhesive shown in Table 4 is applied to the glass component to a thickness of 0.080 mm, and then the Si-SiC component is laminated on it. Pressurized at 1.0 MPa and heated at 120°C for 4 hours to cure, thereby bonding the glass component and the Si-SiC component through an adhesive layer. In this way, samples (laminated components) of Examples 1 to 14 and 18 to 43 are obtained.

[0370] [Evaluation of stacked components]

[0371] The samples in each case were evaluated as follows. The evaluation results are shown in Tables 5 to 7 above.

[0372] (Evaluation of temperature rise)

[0373] The samples in each case were irradiated with infrared light (850nm) for 2 minutes using nine 2kW infrared lamps to evaluate the temperature rise.

[0374] The evaluation criteria are as follows: a sample with a surface temperature exceeding 200°C is evaluated as 0, and a sample with a surface temperature not exceeding 200°C is evaluated as ×.

[0375] The samples of Examples 1-14 and 18-43, which are laminated components, were irradiated with infrared light from the glass component side, and the surface temperature of the Si-SiC component side was used for evaluation. The samples of Examples 15-17 were evaluated using the surface temperature of the side opposite to the infrared irradiation side.

[0376] (Impact resistance evaluation)

[0377] A 533g steel ball was dropped onto each sample to evaluate its impact resistance. The impact resistance evaluation was performed with three samples per sample (n=3). A support frame made of rubber sheet, 3mm thick, 15mm wide, and with a hardness of A50, was placed around the outer perimeter of the sample and clamped and fixed in place. The steel ball was dropped so that it landed within 25mm of the sample's center.

[0378] The evaluation criteria are as follows: If more than 2 out of 3 samples crack when the ball falls at a height of 20cm, it is marked as ×; if 1 out of 3 samples cracks, it is marked as △; if none of the 3 samples crack, it is marked as 〇. Samples with a value of △ or above are considered qualified.

[0379] The samples in Examples 1-14 and 18-43, which are used as laminated components, had steel balls dropped from the Si-SiC component side. It should be noted that the impact resistance of the samples in Examples 17 and 25 was not evaluated.

[0380] (Heat resistance evaluation)

[0381] Each sample was heated at 230°C for 24 hours, and its appearance was visually evaluated. The evaluation criteria were as follows: no appearance changes (discoloration, bubbles, foreign matter, exudation of the bonding layer, etc.) were evaluated as 0, and appearance changes were evaluated as ×. It should be noted that the heat resistance of sample 25 was not evaluated.

[0382] (Warpage)

[0383] The warpage of each sample was measured by using the non-contact three-dimensional shape measuring device "NH-5Ns" manufactured by Mitsubishi Opto-Kei Co., Ltd., according to ISO25178-605, to determine the maximum tilt flatness of the sample surface by measuring the three-dimensional properties of the sample surface.

[0384] Specifically, the sample is placed on a precision platform, and the height of each point on the upper surface of the sample is measured using a laser autofocus microscope. The value of the gap formed when the upper surface of the sample is clamped by two parallel planes is calculated, which is the maximum tilt flatness, as the warping amount.

[0385] (density)

[0386] The mass of each sample is divided by the volume measured using a digital measuring instrument manufactured by DIGI-TEK Co., Ltd.

[0387] (area)

[0388] The area of ​​the uppermost surface of each sample was determined by measuring the dimensions using a digital measuring instrument manufactured by DIGI-TEK Co., Ltd. (for stacked components, it is the exposed main surface of the Si-SiC component; for single components, it is the main surface of one side).

[0389] (Thickness of the bonding layer)

[0390] The thickness of the bonding layer (resin) of samples 1-14 and 18-43 was calculated by SEM cross-sectional observation.

[0391] (Evaluation of thermal shock resistance)

[0392] A laminated component with a width of 15 mm and a length of 100 mm was fabricated using the same combination as samples 1-14 and 18-43. A hot plate was used to heat the Si-SiC component side to create a temperature difference between it and the glass, and the thermal shock resistance was evaluated. Specifically, a hot plate set to 220°C was used to heat the surface of the Si-SiC component, while the glass component side was cooled to 10°C using a cooling plate with flowing cooling water, maintaining this temperature difference for 1 hour.

[0393] The evaluation criteria are as follows: The presence of cracks or cloudiness in the adhesive layer is rated as ×, and the absence of any change is rated as 0. It should be noted that the thermal shock resistance of samples 15-17 and 25 was not evaluated.

[0394] According to the results in Tables 5 to 7, the laminated components of the present invention have a fast temperature rise rate, high impact resistance and thermal shock resistance, and are suitable as heating components (Examples 1 to 5, 7, 9 to 13, 20 to 24, 26 to 43).

[0395] On the other hand, for the laminated component of Example 6, the average coefficient of linear expansion α of the Si-SiC component at 20 to 200 °C is as low as less than 2.85 ppm / °C, and the thermal shock resistance is low.

[0396] For the laminated component in Example 8, the average coefficient of linear expansion α of the Si-SiC component between 20 and 200 °C is as low as less than 2.85 ppm / °C, and it has low impact resistance and thermal shock resistance.

[0397] Although the laminated component in Example 14 has a fast temperature rise rate and high impact and thermal shock resistance, it also has a large warpage.

[0398] The samples in Examples 15 to 17 had low temperature rise rates or low impact resistance.

[0399] For the laminated components in Examples 18 and 19, the average coefficient of linear expansion α of the Si-SiC components between 20 and 200 °C is as low as less than 2.85 ppm / °C, and the thermal shock resistance is low.

[0400] The laminated component in Example 23 has low impact resistance and large warpage.

[0401] The temperature rise rate of the laminated component in Example 25 is low.

[0402] Various embodiments have been described above with reference to the accompanying drawings, but the present invention is not limited to the examples described above. It will be understood by those skilled in the art that various modifications or alterations can be conceived within the scope of the claims, and these also fall within the technical scope of the present invention. Furthermore, the constituent elements of the above embodiments can be combined arbitrarily without departing from the spirit of the invention.

[0403] It should be noted that this application is based on Japanese patent application filed on January 20, 2021 (Japanese Patent Application No. 2021-007287), the contents of which are incorporated herein by reference.

[0404] Symbol Explanation

[0405] 100-layer stacked components

[0406] 101 Glass Components

[0407] 103 Bonding Layer

[0408] 105 Si-SiC components

Claims

1. A laminated component, comprising: Glass components with a linear transmittance of over 80% at a wavelength of 850nm. A resin-containing bonding layer on the glass component, and Si-SiC components on the bonding layer; The glass component, expressed as a molar percentage based on oxides, comprises 55.0–85.0 mol% SiO2, 1.5–22.0 mol% Al2O3, 2.0–14.0 mol% B2O3, and 0–5.0 mol% P2O5, with the total content of all components in the glass component being 100%. The total content of SiO2, Al2O3, B2O3, and P2O5, expressed as a molar percentage based on oxides, is 70.0% to 97.0%. The average coefficient of linear expansion α of the Si-SiC component at 20–200 °C is 2.85–4.00 ppm / °C. The average coefficient of linear expansion β of the glass component at 20–200°C is 1.50–5.00 ppm / °C. The absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component from the average linear expansion coefficient α of the Si-SiC component at 20-200℃, |α-β|, is less than 2.00 ppm / ℃.

2. The layered component of claim 1, wherein, The glass component, expressed as a molar percentage based on oxides, contains 60.0–78.0 mol% SiO2, 8.0–18.0 mol% Al2O3, 2.0–11.0 mol% B2O3, and 0–3.0 mol% P2O5. The total content of SiO2, Al2O3, B2O3 and P2O5, expressed as a molar percentage based on oxides, is 80.0% to 90.0%.

3. The laminated component according to claim 1 or 2, wherein, The total content of RO and ZnO in the glass component, expressed as a molar percentage based on oxides, is 2.0% to 25.0%, where RO represents at least one of MgO, CaO, SrO, and BaO. The total R2O content in the glass component, expressed as a molar percentage based on oxides, is 0 to 15.0%, wherein the R2O represents at least one of Li2O, Na2O, and K2O.

4. The laminated component according to any one of claims 1 to 3, wherein, The glass component has an average linear expansion coefficient β of 2.00–3.50 ppm / ℃, a Young's modulus of 40–120 GPa, and a melting temperature of 1000–2000℃.

5. The laminated component according to any one of claims 1 to 4, wherein, The glass component contains less than 8.5 mol% of B2O3.

6. The laminated component according to any one of claims 1 to 5, wherein, The glass component contains 0 to 13.0 mol% Na₂O when expressed as a molar percentage based on oxides.

7. The laminated component according to any one of claims 1 to 6, wherein, The glass component contains 0.0001 to 0.0115 mol% Fe2O3 when expressed as a molar percentage based on oxides.

8. The laminated component according to any one of claims 1 to 7, wherein, The linear transmittance of the glass component at a wavelength of 850 nm is above 90%.

9. The laminated component according to any one of claims 1 to 8, wherein, The thickness of the glass component is 2–40 mm. The thickness of the Si-SiC component is 0.5 to 15 mm.

10. The laminated component according to any one of claims 1 to 9, wherein, The thermal conductivity of the Si-SiC component at 20°C is 130–300 W / m•K.

11. The laminated component according to any one of claims 1 to 10, wherein, The average linear expansion coefficient β of the glass component at 20–200°C is smaller than that of the Si–SiC component at 20–200°C.

12. The laminated component according to any one of claims 1 to 11, wherein, The Young's modulus of the Si-SiC component is 300–420 GPa.

13. The laminated component according to any one of claims 1 to 12, wherein, The Si-SiC component contains 8 to 60% Si by mass.

14. The laminated component according to any one of claims 1 to 13, wherein, The heat resistance temperature of the resin is 120–420°C.

15. The laminated component according to any one of claims 1 to 14, wherein, The average linear expansion coefficient γ of the bonding layer at 20-200℃ is 2-200ppm / ℃.

16. The laminated component according to any one of claims 1 to 15, wherein, Density 2.40-2.85 g / cm 3 .

17. The laminated component according to any one of claims 1 to 16, wherein, The warpage is less than 0.25mm.

18. The laminated component according to any one of claims 1 to 17, wherein, Further features: The second bonding layer disposed on the Si-SiC component, and A second Si-SiC component bonded to the Si-SiC component via the second bonding layer.

19. A glass composition for use in a laminated component comprising a glass component, a resin-containing bonding layer on the glass component, and a Si-SiC component on the bonding layer, wherein the glass component is a glass component, a resin-containing bonding layer on the glass component, and a Si-SiC component on the bonding layer. The glass composition has a linear transmittance of over 80% at a wavelength of 850 nm. The glass composition, expressed as a molar percentage based on oxides, comprises 55.0–85.0 mol% SiO2, 1.5–22.0 mol% Al2O3, 2.0–14.0 mol% B2O3, and 0–5.0 mol% P2O5, wherein the total content of all components in the glass composition is 100%. The total content of SiO2, Al2O3, B2O3, and P2O5 in the glass composition, expressed as a molar percentage based on oxides, is 70.0% to 97.0%. The average coefficient of linear expansion β of the glass composition at 20–200°C is 1.50–5.00 ppm / °C. The glass composition is used in a laminated component of a Si-SiC component having an average linear expansion coefficient α of 2.85 to 4.00 ppm / ℃ at 20 to 200℃, such that the absolute value of the value obtained by subtracting the average linear expansion coefficient β of the glass component at 20 to 200℃ from the average linear expansion coefficient α of the Si-SiC component at 20 to 200℃, |α - β|, is less than 2.00 ppm / ℃.

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