Insulated gate bipolar transistor and method of manufacturing the same

By introducing highly doped regions and superjunction structures into IGBTs, the problem of high turn-off energy loss in IGBTs has been solved, resulting in lower conduction losses and higher device reliability.

CN117199109BActive Publication Date: 2026-07-24SHENZHEN QIANYIXIN TECH CO LTD
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Patent Information

Application Number
CN202210617417.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-06-01
Publication Date
2026-07-24
Estimated Expiration
2042-06-01

AI Technical Summary

Technical Problem

IGBTs exhibit significant turn-off energy loss during turn-off, primarily due to the inability to quickly eliminate a large number of holes in the drift region, leading to current tailing.

Method used

In an IGBT, a doped region is introduced, with a higher doping concentration than the drift region. A superjunction extends between the doped and drift regions, and the doped region contacts the substrate to form a barrier layer to reduce holes from entering the drift region. This is combined with vapor phase epitaxy to form the doped region and superjunction structure.

Benefits of technology

By reducing the amount of holes stored in the drift region, the time of current tailing is shortened, the turn-off energy loss of the IGBT is reduced, and the reliability and conduction efficiency of the device are improved.

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Abstract

The application provides an insulated gate bipolar transistor and a manufacturing method thereof. The insulated gate bipolar transistor comprises a substrate, a collector region located on one side of the substrate, at least one doped region located on the side of the substrate away from the collector region, each doped region being in contact with the substrate, and a plurality of doped regions being arranged at intervals, a drift region located on the side of the doped region away from the collector region, the drift region having a third surface away from the doped region, the doping concentration of the doped region being higher than that of the drift region, and at least one super junction penetrating into the drift region along the third surface, and part of the drift region being located between the doped region and the super junction, wherein the drift region and the doped region are of a first doping type, and the super junction and the collector region are of a second doping type. By arranging the doped region below the super junction, the current tailing phenomenon in the transistor off process is improved, the off energy loss of the transistor is effectively reduced, and the reliability of the device is greatly improved.
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