A nickel-aluminum layered double hydroxide / molybdenum disulfide heterojunction memristor, a preparation method and applications thereof

Abstract

The application relates to a nickel-aluminum layered double hydroxide / molybdenum disulfide heterojunction memristor, a preparation method and application thereof, belongs to the field of inorganic material two-dimensional heterojunction and information storage technology, and specifically relates to a nickel-aluminum layered double hydroxide / molybdenum disulfide heterojunction memristor, a preparation method and application thereof. The application aims to obtain a heterojunction memristor with analog type resistance change and low working voltage. From bottom to top, the heterojunction memristor comprises a lower electrode, a nickel-aluminum layered double hydroxide layer formed on the lower electrode, a molybdenum disulfide layer formed on the nickel-aluminum layered double hydroxide layer and an upper electrode formed on the molybdenum disulfide layer. The method comprises the following steps: cleaning and drying the lower electrode; forming a protection area on one side of the lower electrode and taking the other side as a growth area; growing the nickel-aluminum layered double hydroxide by adopting a urea hydrolysis method; spin-coating a molybdenum disulfide solution on the nickel-aluminum layered double hydroxide; vacuum evaporation to form the upper electrode, and the preparation is completed. The heterojunction memristor is used for simulating biological synapses.