SiC MOSFET gate driver based on suppressing voltage oscillations
CN117526689BActive Publication Date: 2026-10-16HEFEI UNIV OF TECH
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Patent Information
- Application Number
- CN202311509485.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-10
- Publication Date
- 2026-10-16
- Estimated Expiration
- 2043-11-10
AI Technical Summary
Technical Problem
[0006]本发明所要解决的技术问题是：现有驱动器无法实现电压尖峰抑制和开关损耗优化兼顾、电路拓扑结构比较复杂的问题
Benefits of technology
[0017] 1. In the parameter design, the present invention uses the constraint of not affecting current spikes and suppressing voltage spikes as the constraint conditions, and achieves the effect of optimizing both voltage spike suppression and switching loss. Under the premise of ensuring device safety and reducing electromagnetic interference caused by voltage oscillation, it also has lower switching loss than traditional drive circuits.
✦ Generated by Eureka AI based on patent content.
Abstract
The application discloses a SiC MOSFET gate driver based on suppression of voltage oscillation and belongs to the technical field of power electronics. The SiC MOSFET gate driver is composed of three direct-current voltage sources, two totem pole circuits, two capacitors, four diodes, three resistors and a unidirectional voltage stabilizing diode Z. In view of the problems of the peak voltage generated when the SiC MOSFET works and the loss in the switching process, the driver changes the size of the driving current by charging and discharging of the series capacitors, thereby reducing the loss in the switching process and suppressing the voltage peak, and the topology structure of the driving circuit is simple, any additional control is not needed, and the application is more easy to engineering application, and the application is also applicable to Si MOSFET, IGBT and other devices.
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