Evaporation mask and method for evaluating an evaporation mask

Abstract

A kind of evaporation mask, comprising: outer frame and sub-mask.The outer frame has opening, and the both sides of opening have opposite two positioning side edges.The sub-mask is adapted to connect the outer frame, and has pattern area and two fixed regions, pattern area is located in the center of sub-mask, and fixed region is located in the opposite sides of pattern area, and is adapted to be connected to different positioning side edges when sub-mask is connected with outer frame.There is first reference point and second reference point on the surface of sub-mask, first reference point is located in the center of pattern area, and second reference point is located in the edge of pattern area close to one of fixed regions.The first distance between first reference point and second reference point in the thickness direction of sub-mask is less than or equal to 200 μm.The application also provides a kind of evaporation mask evaluation method.

Description

Technical Field

[0001] This invention relates to a vapor deposition mask and an evaluation method for the vapor deposition mask, and more particularly to a vapor deposition mask and an evaluation method for the vapor deposition mask used in the manufacture of a display panel. Background Technology

[0002] Organic light-emitting diode (OLED) display panels are currently a common display component in portable electronic devices, offering numerous advantages such as self-illumination, wide viewing angles, high energy efficiency, fast response times, and thinness. With the development of the portable electronic device market and users' increasing demands for display quality, OLED display panels are gradually gaining market attention.

[0003] The common manufacturing process for organic light-emitting diode (OLED) display panels involves first fabricating multiple sub-masks with through-holes, then soldering these sub-masks onto a single frame to create a fine metal mask (FMM). Next, in a vapor deposition process, the FMM is applied to a glass substrate, and the material is deposited onto the glass substrate to create the light-emitting pattern on the display panel. During this process, factors such as the shape of the FMM sub-masks and the soldering quality affect the shape, size, and distribution of the light-emitting pattern on the glass substrate, thus impacting the display quality of the OLED display panel. Summary of the Invention

[0004] This invention provides a vapor deposition mask with a good shape, which can avoid the problem of vapor deposition diffusion when used in the manufacturing process of display panels.

[0005] The present invention also provides an evaluation method for vapor deposition masks, which can avoid the problem of vapor deposition diffusion when the evaluated vapor deposition mask is used in the manufacturing process of display panels.

[0006] To achieve the above advantages, one embodiment of the present invention provides a vapor deposition mask, comprising: an outer frame and a vapor deposition process. The outer frame has an opening, and two opposing positioning sides are located on either side of the opening. A sub-mask is adapted to connect to the outer frame and has a patterned area and two fixed areas. The patterned area is located at the center of the sub-mask, and the fixed areas are located on opposite sides of the patterned area, adapted to be connected to different positioning sides when the sub-mask is connected to the outer frame. A first reference point and a second reference point are provided on the surface of the sub-mask. The first reference point is located at the center of the patterned area, and the second reference point is located at the edge of the patterned area near one of the fixed areas. Along the thickness direction of the sub-mask, a first distance between the first reference point and the second reference point is less than or equal to 200 μm.

[0007] In one embodiment, along an interval direction perpendicular to the thickness direction, the aforementioned second reference point has a second distance from the adjacent fixed area, the second distance being greater than or equal to 20 mm.

[0008] In one embodiment, a raised section is formed on the sub-mask, the raised section being located between the first reference point and the fixed region.

[0009] In one embodiment, the sub-mask and the outer frame have multiple welding points, and the fixed area is surrounded by the welding points.

[0010] In one embodiment, the aforementioned welding points are arranged in multiple straight lines, with the welding points in different lines being staggered from each other.

[0011] In one embodiment, the length of the submask is between 150 and 500 mm.

[0012] In one embodiment, the patterned area described above has a plurality of through holes that penetrate the submask in the thickness direction of the submask.

[0013] In one embodiment, along the thickness direction, the aforementioned surface is at least one of a vapor-deposited surface or a back surface, and the through hole includes a first opening located on the back surface, a second opening located on the vapor-deposited surface, and a neck opening located between the first opening and the second opening, wherein the cross-sectional area of ​​the second opening is larger than the cross-sectional areas of the first opening and the neck opening.

[0014] In one embodiment, the first reference point and the second reference point are located next to the through hole.

[0015] An embodiment of the present invention provides an evaluation method for a vapor-deposited mask. The vapor-deposited mask includes an outer frame and a sub-mask. The outer frame has an opening, and two opposing positioning sides are located on both sides of the opening. The sub-mask is adapted to connect to the outer frame and has a patterned area and two fixed areas. The patterned area is located in the center of the sub-mask, and the fixed areas are located on opposite sides of the patterned area. The fixed areas are adapted to be connected to different positioning sides when the sub-mask is connected to the outer frame. The evaluation method includes:

[0016] The positions of a first reference point and a second reference point on the surface of the submask are measured in the thickness direction of the submask. The first reference point is located at the center of the pattern area, and the second reference point is located at the edge of the pattern area near one of the fixed areas.

[0017] When the first distance between the first reference point and the second reference point is less than or equal to 200μm, the vapor deposition mask is deemed to be qualified.

[0018] Based on the above description, the vapor deposition mask of the present invention, because the height difference between the center and edge of the patterned area remains less than a certain value even after being affected by welding and gravity, can adhere as closely as possible to the surface of the glass substrate during vapor deposition, avoiding the problem of vapor deposition spread caused by the gap between the vapor deposition mask and the glass substrate. Furthermore, the evaluation method of the present invention, because a qualified vapor deposition mask has a shape conforming to the aforementioned vapor deposition mask, allows the evaluated vapor deposition mask to be used in the manufacturing process of display panels, thus avoiding the problem of vapor deposition spread.

[0019] To make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0020] Figure 1 This is a top view schematic diagram of a vapor-deposited mask according to an embodiment of the present invention;

[0021] Figure 2 for Figure 1 A magnified view of a section at line segment AA;

[0022] Figure 3 for Figure 1 A partial cross-sectional view of the patterned area is shown in the embodiment.

[0023] Figure 4 for Figure 1 Chinese illustration Figure 1 A side view of the shape of the sub-mask warping at the middle BB line segment;

[0024] Figure 5 In another embodiment, the illustration corresponds to Figure 1 A side view of the shape of the sub-mask warping at the middle BB line segment;

[0025] Figure 6 This is a flowchart illustrating an evaluation method for vapor-deposited masks according to an embodiment of the present invention.

[0026] In the attached figures, the following labels are used:

[0027] 100: Evaporation mask

[0028] 1: Outer frame

[0029] 10: Opening

[0030] 11: Positioning side

[0031] 2: Submask

[0032] 2a: First opening

[0033] 2b: Second opening

[0034] 2c: Neck opening

[0035] 20: Through hole

[0036] 21: Pattern Area

[0037] 211: Pattern Area

[0038] 212: Interval Section

[0039] 22: Fixed Area

[0040] 221: Welding point

[0041] 23: Clamping Area

[0042] 231: Fixture

[0043] 232: Extension

[0044] 24: Protruding section

[0045] L: Straight line

[0046] S1: Back

[0047] S2: Evaporated surface

[0048] P1: First reference point

[0049] P2: Second reference point

[0050] P3: Third reference point

[0051] P4: Fourth Reference Point

[0052] H: First distance

[0053] W: Second distance

[0054] G: Interval

[0055] D1: Thickness direction

[0056] D2: Extension direction

[0057] D3: Width direction

[0058] AA: line segment

[0059] BB: Line segment

[0060] S110: Steps

[0061] S120: Steps Detailed Implementation

[0062] In the following text, the terms used in the description of embodiments according to the present invention, such as "upper" and "lower" indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings. These terms are used merely for the convenience of describing the present invention and are not intended to limit the invention; that is, they do not indicate or imply that the components mentioned must have a specific orientation or be constructed in a specific orientation. Furthermore, the terms "first" and "second" mentioned in this specification or the claims are used only to name components or distinguish different embodiments or scopes, and are not intended to limit the upper or lower limit of the number of components.

[0063] Figure 1 This is a top view schematic diagram of a vapor-deposited mask according to an embodiment of the present invention; Figure 2 for Figure 1 A magnified view of a section at line segment AA; Figure 3 for Figure 1 A partial cross-sectional view of the patterned area is shown in the embodiment. Figure 4 For illustration Figure 1 A side view of the shape of the sub-mask warping at the BB line segment. Note that all components in each diagram are for illustrative purposes only and are not drawn to scale. Figure 4 Only a portion of the submask is drawn.

[0064] like Figure 1 As shown, the vapor deposition mask 100 in this embodiment includes an outer frame 1 and a sub-mask 2. The outer frame 1 has an opening 10, and two opposing positioning sides 11 are located on both sides of the opening 10. The sub-mask 2 is adapted to connect to the outer frame 1 and has a patterned area 21 and two fixed areas 22. The patterned area 21 is located in the center of the sub-mask 2, and the fixed areas 22 are located on opposite sides of the patterned area 21, and are adapted to be connected to different positioning sides 11 when the sub-mask 2 is connected to the outer frame 1. A first reference point P1 and a second reference point P2 are provided on the surface of the sub-mask 2. The first reference point P1 is located in the center of the patterned area 21, and the second reference point P2 is located at the edge of the patterned area 21 near one of the fixed areas 22. Along the thickness direction D1 of the sub-mask 2, the first distance H between the first reference point P1 and the second reference point P2 is less than or equal to 200 μm.

[0065] Specifically, such as Figure 1 As shown, in this embodiment, the vapor deposition mask 100 includes, for example, an outer frame 1 and multiple sub-masks 2. Figure 1Two neutron shields 2 are shown (but their number is only illustrative and not limited to this). The outer frame 1 is, for example, rectangular, and in addition to the aforementioned positioning sides 11, it has connecting arms 12 connecting the two positioning sides 11. These connecting arms 12 and the positioning sides 11 together surround the opening 10. The material of the outer frame 1 is not limited, and can be any existing material. The sub-shield 2 is also, for example, a rectangular plate. Specifically, the length of the sub-shield 2 is, for example, between 150 and 500 mm, and the thickness is, for example, between 10 and 150 μm. Its width can be set according to requirements. In the width direction D3, the width of the sub-shield 2 is, for example, less than the width of the opening 10. The material of the sub-shield 2 is, for example, a nickel-iron alloy, but is not limited to this.

[0066] like Figure 1 As shown, in this embodiment, the sub-mask 2 further includes, for example, clamping regions 23 located at both ends. The aforementioned fixing region 22 is located between the pattern region 21 and the clamping region 23, but the detailed configuration is not limited thereto. The pattern region 21 is the area used to cover the glass substrate (not shown) during the vapor deposition process to form a light-emitting pattern (not shown). In this embodiment, the pattern region 21 includes, for example, five pattern areas 211 and a spacing segment 212 located between two pattern areas 211, but this is not a limitation.

[0067] like Figure 2 and Figure 3 As shown, each pattern area 211 has multiple through holes 20 extending through the sub-mask 2 in the thickness direction D1. The through holes 20 are formed, for example, by a wet etching method, but are not limited thereto. Figure 3 As shown, along the thickness direction D1, the through hole 20 includes, for example, a first opening 2a on the back surface S1, a second opening 2b on the vapor deposition surface S2, and a neck opening 2c between the first opening 2a and the second opening 2b. The cross-sectional area of ​​the second opening 2b is, for example, larger than the cross-sectional areas of the first opening 2a and the neck opening 2c. And the cross-sectional area of ​​the neck opening 2c is, for example, smaller than the cross-sectional area of ​​the first opening 2a. However, the detailed shape of the through hole 20 is not limited to this.

[0068] like Figure 1 As shown, the clamping area 23 is the area where the clamp 231 temporarily clamps the sub-mask 2 during the manufacturing process of connecting the sub-mask 2 to the outer frame 1, so as to temporarily fix the position of the sub-mask 2. Specifically, in this embodiment, each clamping area 23 (both ends of the sub-mask 2) is provided with two extensions 232 spaced apart from each other. The extensions 232 are adapted to be temporarily clamped by the clamp 231 during use, but are not limited thereto.

[0069] The fixed area 22 is the area where the sub-mask 2 is welded and fixed to the outer frame 1. In this embodiment, the sub-mask 2 is fixed to the outer frame 1 (positioning side 11) by, for example, but not limited to, spot welding. Figure 2 As shown, specifically, the sub-mask 2 is connected to the outer frame 1 by a plurality of solder points 221. These solder points 221 are arranged, for example, but not limited to, in two straight lines, which are parallel to each other and perpendicular to the extension direction D2 of the sub-mask 2. The solder points 221 are spaced apart from each other, and the solder points 221 between two adjacent lines are staggered. The shape and extent of the fixed area 22 are formed by these solder points 221.

[0070] like Figures 1 to 4 As shown, in this embodiment, along the extension direction D2, the fixed area 22 has a third reference point P3 on the edge near the pattern area 21, while the positioning side 11 has a fourth reference point P4 on the side near the pattern area 21 (opening 10 side). The positional relationship between the first reference point P1, the second reference point P2, the third reference point P3, and the fourth reference point P4 is not limited in the thickness direction D1. The third reference point P3 and the fourth reference point P4 are spaced apart by a distance G along the extension direction D2. In other words, when the sub-mask 2 is connected to the outer frame 1, the fixed area 22 will be away from the edge of the positioning side 11 (opening 10), but the detailed welding pattern is not limited to the example described above.

[0071] like Figure 4 As shown, the surface of the sub-mask 2 is divided into a vapor deposition surface S2 and a back surface S1 along the thickness direction D1. The vapor deposition surface S2 is the surface facing the vapor deposition source during use. The back surface S1 is the surface facing the glass substrate during use. Figure 1 and Figure 4 As shown, when the sub-mask 2 is fixed to the outer frame 1, the sub-mask 2 will cover the opening 10 and contact the outer frame 1 with the vapor-deposited surface S2. The patterned area 21 covers the front of the opening 10, while the clamping area 23 extends beyond the positioning side 11 of the outer frame 1.

[0072] like Figures 1 to 4 As shown, in this embodiment, the first reference point P1 and the second reference point P2 are, for example, located on the same straight line L along the extending direction D2 of the sub-mask 2. The straight line L is, for example, located at the center of the sub-mask 2 in the width direction D3 of the sub-mask 2, but is not limited thereto. Furthermore, although in Figure 2 , Figure 4 Only draw located in Figure 1 The second reference point P2 on the right side of the pattern area 21 in the middle, but it should be understood that in actual measurement, the reference point should also be measured at the same time. Figure 1 The second reference point P2, which is not drawn, is located to the left of the pattern area 21 in the middle.

[0073] In actual measurement, for example, a non-contact measuring instrument can be used to measure the first reference point P1 and the second reference point P2 located on the back surface S1. Since the first reference point P1 or the second reference point P2 may be located exactly where the through hole 20 is, when judging the reading, the first reference point P1 and the second reference point P2 may be deviated from the straight line L in the extension direction D2 (for example, slightly offset along the width direction D3) to avoid the opening position of the through hole 20, or slightly offset from the edge or center of the pattern area 21 in the extension direction D2.

[0074] The first reference point P1 and the second reference point P2 can be located on the vapor deposition surface S2 or the back surface S1 of the sub-mask 2 (see...). Figure 3 However, to avoid the material thickness of the sub-mask 2 affecting the measurement results, the first reference point P1 and the second reference point P2 should both be located on the vapor-deposited surface S2 or both on the back surface S1. Furthermore, if... Figure 4 As shown, due to the weight of the sub-mask 2 itself, depending on the setting direction of the vapor-deposited mask 100 during measurement, the first reference point P1 is, for example, in the thickness direction D1 (…). Figure 2 The position (in the vertical direction) below the second reference point P2, but not limited to this.

[0075] like Figures 1 to 4 As shown, in this embodiment, the sub-mask 2 has a raised section 24 formed between the patterned area 21 and the welding area. The raised section 24 protrudes towards the back surface S1, for example, along the thickness direction D1, but is not limited thereto. The raised section 24 has a vertex (not shown in the figure) along the thickness direction D1, and is located, for example, at the position of the second reference point P2, but is not limited thereto; in other words, the vertex may be located, for example, between the second reference point P2 and the fourth reference point P4 or in other intervals, depending on the welding result or the weight and structure of the sub-mask 2 itself. Figure 5 In another embodiment, the illustration corresponds to Figure 1 A side view of the shape of the sub-mask warping at the middle BB line segment. Figure 5 It is understood that in other embodiments, depending on the welding result or connection method, the sub-mask 2 may not necessarily form a raised section 24.

[0076] like Figure 2 and Figure 4 As shown, in this embodiment, along the interval direction perpendicular to the thickness direction D1 (the same as the extension direction D2), the second reference point P2 has a second distance W between it and the adjacent fixed area 22. The second distance W is, for example, greater than or equal to 20 mm, which can prevent the protruding section 24 from affecting the flatness of the pattern area 21 (relative to the thickness direction D1). Figure 4 (in the horizontal direction), which in turn affects the vapor deposition result.

[0077] As can be seen from the above description, the vapor deposition mask 100 of this embodiment, because the height difference between the center and the edge of the pattern area 21 is still less than a certain value even after being affected by welding and gravity, can fit as closely as possible to the surface of the glass substrate when vapor deposition is performed on the glass substrate, thus avoiding the problem of vapor deposition expansion caused by the gap between the vapor deposition mask 100 and the glass substrate.

[0078] Figure 6 This is a schematic flowchart of an evaluation method for vapor-deposited masks according to an embodiment of the present invention. Please refer to... Figure 6 The evaluation method in this embodiment includes:

[0079] Step S110 (please refer to the following) Figure 1 The positions of the first reference point P1 and the second reference point P2 on the surface of the sub-mask 2 along the thickness direction D1 are measured; and

[0080] Step S120 (please refer to the following steps) Figure 4 or Figure 5 When the first distance H between the first reference point P1 and the second reference point P2 is less than or equal to 200μm, the vapor deposition mask is deemed to be qualified.

[0081] As can be seen from the above description, the evaluation method of the vapor deposition mask in this embodiment is effective because the height difference between the center and the edge of the pattern area of ​​the qualified vapor deposition mask 100 is still less than a certain value after being affected by welding and gravity. Therefore, when vapor deposition is performed on the glass substrate, it can fit as closely as possible to the surface of the glass substrate, avoiding the problem of vapor deposition expansion caused by the gap between the vapor deposition mask and the glass substrate.

[0082] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Those skilled in the art to which this invention pertains may make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A vapor-deposited mask, characterized in that, Comprising: An outer frame having an opening, and two opposite positioning side edges on both sides of the opening; And A sub-mask adapted to be connected to the outer frame, having a pattern area and two fixing areas, the pattern area being located in the center of the sub-mask, the two fixing areas being located on opposite sides of the pattern area, and adapted to be respectively connected to different ones of the positioning side edges when the sub-mask is connected to the outer frame; Wherein, on a surface of the sub-mask, there is a first reference point and a second reference point, the first reference point being located in the center of the pattern area, the second reference point being located on an edge of the pattern area close to one of the two fixing areas, along a thickness direction of the sub-mask, a first distance between the first reference point and the second reference point is less than or equal to 200 µm; wherein, A raised section is formed on the sub-mask, the raised section being located between the first reference point and the fixing area, and the raised section having a vertex along the thickness direction; Along a spacing direction perpendicular to the thickness direction, there is a second distance between the second reference point and the adjacent fixing area, and the second distance is greater than or equal to 20 mm.

2. The vapor-deposited mask as described in claim 1, characterized in that, There are multiple welding points between the sub-mask and the outer frame, and the fixing area is surrounded by the multiple welding points.

3. The vapor-deposited mask as described in claim 2, characterized in that, The multiple welding points are arranged in multiple straight lines, and the multiple welding points in different ones of the multiple straight lines are offset from each other.

4. The vapor-deposited mask as described in claim 1, characterized in that, The length of the sub-mask is between 150 and 500 mm.

5. The vapor-deposited mask as described in claim 1, characterized in that, The pattern area has multiple through holes penetrating the sub-mask along a thickness direction of the sub-mask.

6. The vapor-deposited mask as described in claim 5, characterized in that, Along the thickness direction, the surface is at least one of an evaporation surface or a back surface, the multiple through holes include a first opening located on the back surface, a second opening located on the evaporation surface, and a neck opening located between the first opening and the second opening, and the opening cross-sectional area of the second opening is larger than the opening cross-sectional areas of the first opening and the neck opening.

7. The vapor-deposited mask as described in claim 6, characterized in that, The first reference point and the second reference point are located beside the multiple through holes.

8. A method for evaluating vapor-deposited masks, characterized in that, The evaporation mask includes: an outer frame and a sub-mask, the outer frame having an opening, and two opposite positioning side edges on both sides of the opening; the sub-mask is adapted to be connected to the outer frame, and has a pattern area and two fixing areas, the pattern area being located in the center of the sub-mask, the two fixing areas being located on opposite sides of the pattern area, and adapted to be respectively connected to different ones of the positioning side edges when the sub-mask is connected to the outer frame, the evaluation method includes: Measuring the positions of a first reference point and a second reference point on a surface of the sub-mask in the thickness direction of the sub-mask, the first reference point being located in the center of the pattern area, the second reference point being located on an edge of the pattern area close to one of the two fixing areas; and When a first distance between the first reference point and the second reference point is less than or equal to 200 µm, determining that the evaporation mask is qualified; wherein, A raised section is formed on the sub-mask, the raised section being located between the first reference point and the fixing area, and the raised section having a vertex along the thickness direction; Along a spacing direction perpendicular to the thickness direction, the second reference point has a second distance from the adjacent fixed area, the second distance being greater than or equal to 20 mm.

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