Resistivity adjustment method of single crystal silicon rod

During the preparation of semiconductor materials, the crystal pulling is completed before shouldering and equal diameters and the resistivity of the shoulder-shaped silicon body is tested, and if the requirements are not met, doping the dopant is solved, which solves the problem of difficult control of the resistivity of semiconductor materials and improves the pass rate and production efficiency of the crystal rod.

CN118223110BActive Publication Date: 2025-03-28FERROTEC (NINGXIA) SEMICON TECH CO LTD
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Patent Information

Application Number
CN202410346859.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-03-26
Publication Date
2025-03-28
Estimated Expiration
2044-03-26

AI Technical Summary

Technical Problem

During the preparation of semiconductor materials, the resistivity of silicon single crystal is difficult to accurately control, resulting in the crystal rod being unable to meet the customer's targeting resistivity requirements, affecting the pass rate and production efficiency.

Method used

By finishing the crystal pulling after the shoulder release starts and before the equal diameter starts, the shoulder-shaped silicon body is taken out for resistivity testing. If the target range is exceeded, the dopant is added to the silicon melt according to the predetermined re-doping standards and the single crystal silicon drawing is continued.

Benefits of technology

Accurate control of the resistivity of single crystal silicon rods is achieved, the pass rate of crystal rods is improved, and the time and economic cost of preparing target resistivity crystal rods is saved.

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Abstract

The present invention provides a resistivity adjustment method for a single crystal silicon rod, and relates to the technical field of semiconductor material preparation and material doping. The method comprises the following steps: step 1: preparing raw materials, chemical materials, and chemical materials, and then pulling single crystal silicon; step 2: ending crystal pulling after shoulder release and before equal diameter start, and taking out the pulled shoulder-shaped silicon body; step 3: performing resistivity test on the shoulder-shaped silicon body; step 4: judging whether the measured resistivity of the shoulder-shaped silicon body is within the target target resistivity range; if so, continuing to pull single crystal silicon; if it exceeds the target target resistivity, supplementing dopants into silicon melt according to a predetermined supplementary doping standard; and continuing to pull single crystal silicon using the silicon melt supplemented with dopants. This scheme can realize accurate control of the resistivity of the crystal rod, thereby improving the qualified rate of the crystal rod, and at the same time saving the time and economic cost of preparing the target resistivity crystal rod.
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