Micro-LED device and preparation method thereof

By etching and growing Micro-LED devices of different colors on the same substrate, the problems of high production cost, low efficiency and color crosstalk in Micro-LED display technology are solved, and efficient and stable Micro-LED display effects are achieved.

CN118867068BActive Publication Date: 2025-09-16JIANGSU INST OF ADVANCED SEMICON CO LTD
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Patent Information

Application Number
CN202410878820.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-07-02
Publication Date
2025-09-16
Estimated Expiration
2044-07-02

AI Technical Summary

Technical Problem

Existing Micro-LED display technology has problems with RGB three-color integration, such as high production cost and low production efficiency. Color crosstalk between adjacent light-emitting structures leads to poor color purity and brightness uniformity, low luminous efficiency and poor color consistency.

Method used

Micro-LED devices of different colors are formed on the same substrate by selective area etching and epitaxial growth, avoiding pixel position errors and damage in traditional mass transfer technology, reducing production steps and equipment costs, and using multiple dielectric layers to isolate the light-emitting structure to improve light-emitting efficiency and color purity.

Benefits of technology

It improves the stability and long-term reliability of Micro-LED devices, enhances luminous efficiency, simplifies the production process, reduces equipment costs, and increases pixel density and display resolution.

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Abstract

The present invention discloses a Micro-LED device and a method for manufacturing the same. The method includes sequentially forming a stacked N-type layer, a first light-emitting structure, and a first dielectric layer on a substrate; removing a portion of the film layer to form a first protrusion, a first groove, a second protrusion, a second groove, and a third protrusion; forming a second dielectric layer in the first groove and the second groove; removing at least a portion of the first dielectric layer and a portion of the second dielectric layer to expose the first light-emitting structure and form a first hole, and forming a first P-electrode; removing the second dielectric layer on the first groove, and sequentially forming a second light-emitting structure and a second P-electrode at the bottom of the first groove; removing the second dielectric layer on the second groove, and forming a third light-emitting structure and a third P-electrode; and removing the third protrusion and the first and second dielectric layers on the surface of the third protrusion to expose the N-type layer and the N-electrode. This solution ensures color purity and brightness uniformity, and improves the problems of low luminous efficiency and poor color consistency.
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