Method for calculating doping amount of single crystal silicon rod and method for preparing single crystal silicon rod

By calculating and re-doping doping in the re-injection process, the problem that traditional methods are difficult to control the dopant concentration is solved, and the resistivity uniformity and axial stability of the single-crystal silicon rod are achieved.

CN118910727BActive Publication Date: 2025-03-28ZHEJIANG JINKO SOLAR CO LTD
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Patent Information

Application Number
CN202411413136.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-10-11
Publication Date
2025-03-28
Estimated Expiration
2044-10-11

AI Technical Summary

Technical Problem

In the field of photovoltaic technology, it is difficult for traditional methods to effectively control the concentration of elements doped with strong volatile properties (such as arsenic, antimony, bismuth, selenium, tellurium) in single crystal silicon cells, making it difficult to ensure the uniformity of the resistivity of the crystal rod.

Method used

A method for calculating the doping amount of a single crystal silicon rod is provided. By considering the evaporation loss of the dopant in the re-dose feeding process, the mass of the master alloy and dopant that need to be re-doped is calculated, thereby ensuring the uniform distribution of the dopant.

Benefits of technology

Through this method, the resistivity uniformity of the single crystal silicon rod can be significantly improved, the axial resistance stability can be achieved, and the requirements of high-efficiency photovoltaic cells can be met.

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Abstract

The disclosed embodiment relates to the field of photovoltaic technology, and provides a method for calculating the doping amount of a single crystal silicon rod and a method for preparing a single crystal silicon rod, which are applied to a single crystal silicon rod doped with a dopant with a strong volatile property, so as to improve the uniformity of the resistivity of such a single crystal silicon rod. The method for calculating the doping amount of a single crystal silicon rod includes: determining the number of times the furnace platform reports and adds materials; when the number of times the furnace platform reports and adds materials is greater than 1, adding a master alloy and a dopant to a crucible; sequentially performing a lead-out process, an equal diameter growth process, and a re-feeding process; after adding the recycled material to the crucible, judging whether it is established; if established, calculating the actual amount of dopant Asf remaining in the crucible after the re-feeding process is completed; according to Mb=(As0‑Asf)L / NA, calculating the mass Mb of the dopant that needs to be supplemented after the re-feeding process is completed; according to Mc=AmP / Cc, calculating the mass Mc of the master alloy that needs to be supplemented after the re-feeding process is completed.
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