A low-temperature sintered ceramic material with high density and ultra-low loss and a preparation method thereof

By using the chemical composition of (La1-xNdx)2(Zr0.96Ti0.04)3(MoO4)9, the replacement amount and sintering temperature of Nd3+ are controlled, and the problems of high sintering temperature and poor dielectric performance of existing microwave dielectric ceramic materials are solved, and a low-temperature sintering ceramic material with high density and ultra-low loss is achieved, which is suitable for the needs of high frequency and low power consumption.

CN118955129BActive Publication Date: 2025-03-28ZHAOQING UNIV
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Patent Information

Application Number
CN202410880734.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-07-02
Publication Date
2025-03-28
Estimated Expiration
2044-07-02

AI Technical Summary

Technical Problem

The existing microwave dielectric ceramic materials have high sintering temperature, poor dielectric performance, and have not improved density, making it difficult to meet the needs of high frequency and low power consumption.

Method used

Using the chemical composition of (La1-xNdx)2(Zr0.96Ti0.04)3(MoO4)9, a low-temperature sintered ceramic material with high density and ultra-low loss was prepared by controlling the substitution amount and sintering temperature of Nd3+.

Benefits of technology

The high density and ultra-low loss of ceramic materials are achieved, the relative dielectric constant (εr) reaches 10.44, Q×f=149962GHz, τf=-34.8ppm/℃, and the sintering temperature is only 650-800℃, which is suitable for industrial production.

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Abstract

The present invention provides a low-temperature sintered ceramic material with high density and ultra-low loss and a preparation method thereof, belonging to the field of microwave dielectric ceramic materials. The microwave dielectric ceramic material prepared by the present invention has a composition expression of (La 1‑x Nd x ) 2 (Zr 0.96 Ti 0.04 ) 3 (MoO 4 ) 9 , where X is 0.1-0.7. The relative dielectric constant (ε r ) reached 10.44, Q×f=149962GHz, τ f =-34.8ppm / ℃, density up to 3.9g / cm 3 The preparation method of the present invention is simple, the sintering temperature is 650-800°C, the preparation time is short, and it is suitable for industrial production.
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