Wear leveling control method of memory device and memory system

Abstract

The invention provides a wear leveling control method of a memory device and a memory system, the memory system comprises the memory device, a wear leveling controller and a processor, the memory device comprises a plurality of memory area units, the wear leveling controller and the processor, the processor is located inside or outside the storage device and is configured to perform wear leveling control on a storage area unit of the storage device, and the processor is configured to execute the following steps: acquiring the written-in times of the storage area unit; judging whether the written-in frequency of the storage area unit reaches a preset regulation and control threshold value or not; and when the preset regulation and control threshold value is reached, starting wear leveling control, and dispersing the written data of each storage area unit. According to the wear leveling control method of the memory device and the memory system provided by the invention, the requirement of storing warm data or hot data can be met under the condition that the performance of the memory device is not influenced by the written-in frequency of a single memory area unit.

Description

Technical Field

[0001] The present application relates to the field of phase change storage, and in particular to a wear leveling control method for a storage device and a storage system. Background Art

[0002] Recently, research on large-capacity non-volatile memory technology that alleviates the weaknesses of 3D XPoint memory has become active. This non-volatile memory is called Selector Only Memory (SOM), Self-Selecting Memory (SSM), or Single-chalcogenide Xpoint Memory (SXM) technology. Major semiconductor memory companies such as Samsung Electronics, SK Hynix, and Micron are conducting research and development. SOM is different from 3D XPoint memory, etc. in that it uses a crossbar structure with a memory cell consisting of only one selector.

[0003] SOM is mainly used as a substitute for DRAM, mainly storing hot or warm data, and has a relatively high requirement for the number of writes (for example, >1E12). However, the number of writes to SOM is generally around 1E9, which is difficult to meet such requirements. Summary of the invention

[0004] The purpose of the present application is to provide a wear leveling control method for a storage device and a storage system, so as to meet the demand for storing hot data or warm data without affecting the performance of the storage device.

[0005] In a first aspect, the present application provides a memory system, comprising:

[0006] A storage device comprising a plurality of storage area units;

[0007] a wear leveling controller located inside or outside the memory device and configured to perform wear leveling control on a storage area unit of the memory device; and

[0008] A processor configured to execute:

[0009] Get the number of times the storage area unit has been written;

[0010] Determine whether the number of times the storage area unit is written reaches a preset control threshold; and

[0011] When the preset control threshold is reached, wear leveling control is started to disperse the written data of each storage area unit.

[0012] In some embodiments of the present application, a write count table is provided in the wear leveling controller, and the write count table records the write counts of the storage area unit.

[0013] In some embodiments of the present application, the preset regulation threshold is greater than 1 and less than or equal to the default maximum number of times that the storage area unit can be written.

[0014] In some embodiments of the present application, the storage device further includes a plurality of idle area units, and the idle area units are arranged on at least one side of the storage area unit; the storage area unit whose number of writes reaches a preset regulation threshold is a regulation storage area unit;

[0015] The processor is also configured to perform:

[0016] Select at least one of the storage area unit and the free area unit as a target area unit; and

[0017] The data to be written into the regulated storage area unit after reaching the preset regulation threshold is written into the target area unit to disperse the storage times of each storage area unit.

[0018] In some embodiments of the present application, the plurality of storage area units include a first storage area unit and a second storage area unit, the number of times the first storage area unit is written is greater than the number of times the second storage area unit is written; the number of times the first storage area unit is written reaches a preset control threshold, and the number of times the second storage area unit is written does not reach the preset control threshold;

[0019] The processor is further configured to perform at least one of the following:

[0020] selecting at least one of the idle area units as a target area unit;

[0021] Selecting a region unit with the smallest number of write times from the second storage region unit, and using the region unit with the smallest number of write times as a target region unit; and

[0022] A region unit whose remaining number of times of being written is within the selected range is selected from the second storage region unit, and the region unit whose remaining number of times of being written is within the selected range is used as a target region unit.

[0023] In some embodiments of the present application, the processor is further configured to execute: setting the storage capacity of the free area unit to 1% to 5% of the storage capacity of the storage area unit.

[0024] In some embodiments of the present application, if the data written into the storage area unit is warm data, the storage capacity of the free area unit is set to 1% to 3% of the storage capacity of the storage area unit.

[0025] In some embodiments of the present application, if the data written into the storage area unit is hot data, the storage capacity of the free area unit is set to 3% to 5% of the storage capacity of the storage area unit.

[0026] In some embodiments of the present application, the preset control thresholds corresponding to different storage area units in the same storage device are the same or different; and / or

[0027] The storage device includes a plurality of storage area units, and the preset control thresholds corresponding to the storage area units of different storage devices are the same or different.

[0028] In a second aspect, the present application further provides a wear leveling control method for a storage device, wherein the storage device includes a plurality of storage area units, and the wear leveling control method includes:

[0029] Get the number of times the storage area unit has been written;

[0030] Determine whether the number of times the storage area unit is written reaches a preset control threshold; and

[0031] When the preset control threshold is reached, wear leveling control is started to disperse the written data of each storage area unit.

[0032] The wear leveling control method and memory system of the storage device provided by the present application, by adding a wear leveling controller, and by obtaining the number of times the storage area unit is written, it is determined whether the number of times the storage area unit is written reaches a preset control threshold, and when the preset control threshold is reached, the wear leveling control is started to disperse the number of storage times of each storage area unit. Since the wear leveling controller can regulate the number of times the storage area unit is written, the number of times the storage area unit is written that exceeds the preset control threshold can be dispersed, so that the performance of the storage device will not be affected by the number of times a single storage area unit is written, thereby meeting the needs of storing warm data or hot data. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0034] Figure 1 A flowchart of a wear leveling control method for a storage device provided in some embodiments of the present application.

[0035] Figure 2 This is a product schematic diagram of a storage device with a wear leveling controller provided in some embodiments of the present application.

[0036] Figure 3 yes Figure 1 Flow chart of step S3 in FIG.

[0037] Figure 4 A module diagram of the memory system provided in this application. DETAILED DESCRIPTION

[0038] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments provided in this application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of this application.

[0039] Unless the context requires otherwise, throughout the specification and claims, the term "including" is interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0040] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "multiple" means two or more. "At least one of A, B and C" has the same meaning as "at least one of A, B or C", and both include the following combinations of A, B and C: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B and C. "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0041] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0042] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more conditions or values ​​may, in practice, be based on additional conditions or beyond values.

[0043] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value, where the acceptable range of deviation is determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0044] It should be noted that the illustrations provided in the embodiments of the present application are only used to illustrate the basic concept of the present application in a schematic manner. Although the illustrations only show components related to the present application and are not drawn according to the number, shape and size of components in actual implementation, the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0045] The present application may repeat reference numerals and / or reference letters in different implementations. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various implementations and / or settings discussed.

[0046] The present application aims at the technical problem that the number of times a SOM is written cannot meet the demand for storing hot data or warm data. By adding a wear leveling controller and obtaining the number of times a storage area unit is written, it is determined whether the number of times a storage area unit is written reaches a preset control threshold. When the preset control threshold is reached, the wear leveling control is started to disperse the storage times of each storage area unit. Due to the existence of the wear leveling controller, the number of times a storage area unit is written can be regulated, and the number of times a storage area unit is written that exceeds the preset control threshold can be dispersed. In this way, the performance of the storage device will not be affected by the number of times a single storage area unit is written, thereby meeting the demand for storing warm data or hot data.

[0047] See also Figures 1 to 3 Some embodiments of the present application provide a wear leveling control method for a storage device. The storage device 100 includes a plurality of storage area units 101. The wear leveling control method includes:

[0048] Step S1, obtaining the number of times the storage area unit 101 is written;

[0049] Step S2, determining whether the number of times the storage area unit 101 is written reaches a preset control threshold; and

[0050] Step S3 , when the preset control threshold is reached, the wear leveling control is started to distribute the written data of each storage area unit 101 .

[0051] When the judgment result in step S2 is that the preset control threshold is not reached, the wear leveling control is not started, and steps S1 to S2 are subsequently executed until the number of times the storage area unit 101 is written reaches the preset control threshold, and then step S3 is executed.

[0052] The preset control threshold is greater than 1 and less than or equal to the default maximum number of times that the storage area unit 101 can be written.

[0053] In some embodiments of the present application, on a number axis composed of the number of writes, the distance from the numerical value corresponding to the preset control threshold to the end point of the number axis (i.e., the numerical value corresponding to the default maximum number of writes to the storage area unit 101) is smaller than the distance from the point corresponding to the preset control threshold to the starting point of the number axis.

[0054] In some embodiments of the present application, different types of storage devices 100 have different default maximum write times, and accordingly, the preset control thresholds are also different.

[0055] For example: if the storage device 100 is a SOM memory, the default maximum number of times the SOM memory can be written is assumed to be 1E9, and the preset control threshold may be 1E4, 1E5, 1E6, 1E7, 1E8, etc.; if the storage device 100 is a 3D phase change memory (PCM), the default maximum number of times the PCM memory can be written is assumed to be 1E6, and the preset control threshold may be 1E2, 1E3, 1E4, 1E5, etc.; if the storage device 100 is a 3D NAND memory, the default maximum number of times the 3D NAND memory can be written is 5K, and the preset control threshold may be 2K, 3K, 4K, etc.

[0056] The storage area unit 101 may be a storage cell, a storage block or a storage bank, wherein a storage bank includes a plurality of storage blocks, and a storage block includes a plurality of storage cells.

[0057] In some embodiments of the present application, the preset control thresholds corresponding to different storage area units 101 in the same storage device 100 are the same or different.

[0058] In some embodiments of the present application, the storage device includes multiple storage area units 101 of different storage devices 100 , and the preset control thresholds corresponding to the storage area units 101 are the same or different.

[0059] In step S1 , the processor 200 obtains the number of times the storage area unit 101 is written.

[0060] In step S2, the processor 200 determines whether the number of times the storage area unit 101 is written reaches a preset control threshold.

[0061] In step S3 , the wear leveling controller 300 is started by the processor 200 to perform wear leveling control.

[0062] In some embodiments of the present application, the wear leveling controller 300 has a write count table, which records the write count of the storage area unit. When the preset control threshold is reached, the processor 200 sends a start signal to the wear leveling controller 300, and the wear leveling controller 300 starts the wear leveling controller 300 when receiving the start signal to perform wear leveling control on the storage device.

[0063] In step S3 , the number of times of storage in each storage area unit 101 is distributed as the total number of times of writing to each storage area unit 101 .

[0064] The storage area unit 101 whose number of written times reaches the preset regulation threshold is defined as a regulation storage area unit.

[0065] In some embodiments of the present application, the storage device 100 further includes a plurality of idle area units 102, and the idle area units 102 are arranged on at least one side of the storage area unit 101. The idle area unit 102 does not write data initially, but decides whether to write data according to needs after performing wear leveling control. The existence of the idle area unit 102 is to replace part of the storage area units to carry the written data dispersed from the storage area units, thereby reducing the total number of writes to the storage area units, so as to prevent the storage area units (storage units, storage blocks or storage groups) from being permanently damaged due to repeated writing too many times.

[0066] In some embodiments of the present application, the step S3 of “distributing the storage times of each storage area unit 101” includes:

[0067] Step S31, selecting at least one from the storage area unit 101 and the free area unit 102 as a target area unit;

[0068] Step S32, writing the data to be written into the control storage area unit after reaching the preset control threshold into the target area unit.

[0069] Step S31 includes two situations, namely: Situation 1: In a control area, if the number of times one or several storage area units among the multiple storage area units 101 are written differs greatly from the other storage area units, one or several storage area units 101 can be used as the target area unit, and the data to be written can be written into the target area unit with priority. Situation 2: In a control area, if the storage area unit 101 has reached the preset control threshold, at least one of the idle area units 102 is used as the target area unit, and the data to be written is written into the target area unit.

[0070] Specifically, the plurality of storage area units 101 may include a first storage area unit 1011 and a second storage area unit 1012, and the number of times the first storage area unit 1011 is written is greater than the number of times the second storage area unit 1012 is written. In step S2, the number of times the first storage area unit 101 is written reaches a preset control threshold, and the number of times the second storage area unit 1012 is written does not reach the preset control threshold.

[0071] The number of times the second storage area unit 1012 is written can be 0 or multiple times. In a control area, writing data into the storage area unit 101 includes at least the following situations:

[0072] In scenario 1, data is first written to the first storage area unit 1011. When the number of times the first storage area unit 1011 is written reaches a preset control threshold, data is then written to the second storage area unit 1012. Accordingly, the number of times the second storage area unit 1012 is written may be 0.

[0073] Scenario 2: data is written to the first storage area unit 1011 and the second storage area unit 1012 simultaneously or successively, but the first storage area unit 1011 and the second storage area unit 1012 are written with different times. When the first storage area unit 1011 is written with a preset control threshold, the second storage area unit 1012 is written with a times that does not reach the preset control threshold. The second storage area unit 1012 may be written with multiple times.

[0074] Accordingly, in some embodiments of the present application, step S31 includes at least one of the following:

[0075] Selecting at least one of the idle area units 102 as a target area unit;

[0076] Selecting the area unit with the smallest number of write times from the second storage area unit 1012, and taking the area unit with the smallest number of write times as the target area unit; and

[0077] An area unit whose remaining number of writes is within a selected range is selected from the second storage area unit 1012, and the area unit whose remaining number of writes is within the selected range is used as the target area unit; wherein the remaining number of writes is the difference between the preset control threshold and the current number of writes of the second storage area unit; and the selected range refers to a set of remaining number of writes that is lower than a preset value.

[0078] In some embodiments of the present application, the storage capacity of the free area unit 102 is set to 1% to 5% of the storage capacity of the storage area unit 101 .

[0079] The number and storage capacity of the free area units 102 may be determined according to the type of data to be stored in the storage device. The storage capacity is the product of the number of bytes written at one time and the total number of write times.

[0080] In response to requirements of different uses, the free area unit 102 of the storage device 100 can be set with different storage capacities.

[0081] In some embodiments of the present application, if the data written into the storage area unit 101 is warm data, the storage capacity of the free area unit 102 is set to 1% to 3% of the storage capacity of the storage area unit 101. For example, a storage class memory (SCM) application.

[0082] In some embodiments of the present application, if the data written into the storage area unit 101 is hot data, the storage capacity of the free area unit 102 is set to 3% to 5% of the storage capacity of the storage area unit 101. For example, High Bandwidth Memory (HBM) is applied.

[0083] Among them, warm data and hot data are classified according to the access frequency and importance of data. Hot data refers to data with high access frequency, which usually needs to be frequently accessed by computing nodes and is suitable for storage in databases such as MySQL, MongoDB and HBase. Hot data has obvious scenario characteristics and is conducive to driving marketing. Warm data is data between hot data and cold data, with access latency of more than 100ms to seconds, and can be accessed online synchronously. Warm data is non-instantaneous status and behavior data, which can also be simply understood as mixing hot data and cold data to become warm data. The existence of warm data is highly timely, but the query probability is not as high as that of hot data. In summary, hot data is data corresponding to current events or applications that are accessed multiple times, with high access frequency and timeliness. Warm data is behavioral data with certain timeliness, such as recently active applications and places visited recently. It has timeliness but relatively low access frequency.

[0084] The memory device 100 with the wear leveling controller 300 can perform dynamic, static and global wear leveling.

[0085] When the storage device 100 performs dynamic wear leveling control, the processor of the storage device 100 will dynamically adjust the data write position according to the usage of the storage area unit during operation. When a storage area unit 101 is written multiple times, after judgment by the processor, if the number of times the storage area unit 101 is written reaches the preset control threshold, the data to be written into the storage area unit 101 will be written into the target area unit (for example: other unused idle area units 102, etc.) to disperse the number of storage times of each storage area unit, thereby extending the service life of the storage device. When the storage device 100 performs dynamic wear leveling, only the idle area unit 102 is used as the target area unit for wear leveling control.

[0086] When the storage device 100 performs static wear leveling control, the processor of the storage device 100 not only balances the writing of dynamic data, but also reallocates static data that has not changed for a long time. Therefore, the static data is moved to other free area units 102 that are used as target area units. Correspondingly, the storage area unit 101 storing static data becomes a new "free area unit", that is, a new target area unit. If the number of repeated writes of the dynamic write data reaches the preset control threshold, the excess write of the dynamic write data is moved to the new "free area unit" to disperse the storage times of each storage area unit. Since the new "free area unit" itself is also a storage area unit, when the storage device 100 performs static wear leveling, the storage area unit 101 and the free area unit 102 are used for wear leveling.

[0087] When the storage device 100 performs global wear leveling control, the processor of the storage device 100 performs wear leveling control on all storage devices 100 in the entire storage system, avoiding premature failure of some storage devices 100, thereby extending the life of the entire system. When the storage device 100 performs global wear leveling, the storage area unit 101 and the idle area unit 102 are used for wear leveling control.

[0088] See also Figure 4 The present application also provides a memory system 1000 , which includes a memory device 100 , a processor 200 , and a wear leveling controller 300 .

[0089] The storage device 100 includes a plurality of storage area units 101 , the processor 200 is located inside or outside the storage device 100 , and the wear leveling controller 300 is located inside or outside the storage device 100 .

[0090] The processor 200 is configured to execute:

[0091] Obtaining the number of times the storage area unit 101 has been written;

[0092] Determine whether the number of times the storage area unit 101 is written reaches a preset control threshold; and

[0093] When the preset control threshold is reached, wear leveling control is started to disperse the written data of each storage area unit.

[0094] When the number of times the storage area unit 101 is written reaches a preset control threshold, the processor 200 sends a start signal to the wear leveling controller 300 .

[0095] The wear leveling controller 300 is configured to receive a startup signal from the processor 200 , and perform wear leveling control on the storage area unit 101 of the storage device 100 after startup.

[0096] In some embodiments of the present application, the wear leveling controller 300 has a write count table, which records the write count of the storage area unit 101 .

[0097] In some embodiments of the present application, the preset regulation threshold is greater than 1 and less than or equal to the default maximum number of times that the storage area unit 101 can be written.

[0098] In some embodiments of the present application, the storage device 100 further includes a plurality of idle area units 102, and the idle area unit 102 is disposed on at least one side of the storage area unit 101; the storage area unit 101 whose number of writes reaches a preset regulation threshold is a regulated storage area unit.

[0099] In some embodiments of the present application, the processor 200 is further configured to execute:

[0100] Select at least one of the storage area unit 101 and the free area unit 102 as a target area unit; and

[0101] The data to be written into the regulated storage area unit after reaching the preset regulation threshold is written into the target area unit to disperse the storage times of each storage area unit 101 .

[0102] In some embodiments of the present application, the plurality of storage area units 101 include a first storage area unit and a second storage area unit, the number of times the first storage area unit is written is greater than the number of times the second storage area unit is written; the number of times the first storage area unit is written reaches a preset control threshold, and the number of times the second storage area unit is written does not reach the preset control threshold.

[0103] In some embodiments of the present application, the processor 200 is further configured to perform at least one of the following:

[0104] Selecting at least one of the idle area units 102 as a target area unit;

[0105] Selecting a region unit with the smallest number of write times from the second storage region unit, and using the region unit with the smallest number of write times as a target region unit; and

[0106] A region unit whose remaining number of times of being written is within the selected range is selected from the second storage region unit, and the region unit whose remaining number of times of being written is within the selected range is used as a target region unit.

[0107] In some embodiments of the present application, the processor 200 is further configured to execute: setting the storage capacity of the free area unit 102 to 1% to 5% of the storage capacity of the storage area unit 101 .

[0108] In some embodiments of the present application, if the data written into the storage area unit 101 is warm data, the storage capacity of the free area unit 102 is set to 1% to 3% of the storage capacity of the storage area unit 101 .

[0109] In some embodiments of the present application, if the data written into the storage area unit 101 is hot data, the storage capacity of the free area unit 102 is set to 3% to 5% of the storage capacity of the storage area unit 101 .

[0110] In some embodiments of the present application, the preset control thresholds corresponding to different storage area units 101 in the same storage device 100 are the same or different.

[0111] In some embodiments of the present application, the storage device 100 includes a plurality of storage area units 101 , and the preset control thresholds corresponding to different storage area units 101 of the storage device 100 are the same or different.

[0112] The wear leveling control method and memory system of the storage device provided by the present application, by adding a wear leveling controller, and by obtaining the number of times the storage area unit is written, it is determined whether the number of times the storage area unit is written reaches a preset control threshold, and when the preset control threshold is reached, the wear leveling control is started to disperse the storage times of each storage area unit. Since the wear leveling controller can regulate the number of times the storage area unit is written, the number of times the storage area unit is written that exceeds the preset control threshold can be dispersed, so that the performance of the storage device will not be affected by the number of times a single storage area unit is written, thereby meeting the needs of storing warm data or hot data.

[0113] In addition, since the wear leveling controller of the present application does not start and execute the wear leveling control at the beginning, but starts and executes the wear leveling control after the number of data writes to the storage area unit reaches a certain number (preset control threshold), during the period when the wear leveling controller is not started, it is not necessary to spend time on the wear leveling control, and the total wear leveling control time is reduced, so that the write delay can be reduced.

[0114] The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technical personnel in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A memory system, It is characterized in that include: A storage device comprising a plurality of storage area units; a wear leveling controller, located inside or outside the memory device and configured to perform wear leveling control on a storage area unit of the memory device; and A processor configured to execute: Obtaining the number of times the storage area unit has been written; Determining whether the number of times the storage area unit is written reaches a preset control threshold; and When the preset control threshold is reached, wear leveling control is started to disperse the written data of each storage area unit.

2. The memory system according to claim 1, It is characterized in that The wear leveling controller has a write count table therein, and the write count table records the write count of the storage area unit.

3. The memory system according to claim 1, It is characterized in that The preset control threshold is greater than 1 and less than or equal to a default maximum number of times that the storage area unit can be written.

4. The memory system according to claim 1, It is characterized in that The storage device further comprises a plurality of free area units, wherein the free area units are arranged on at least one side of the storage area unit; the storage area unit whose number of written times reaches the preset regulation threshold is a regulation storage area unit; The processor is further configured to perform: Select at least one of the storage area unit and the free area unit as a target area unit; and The data to be written into the regulating storage area unit after reaching the preset regulating threshold is written into the target area unit to disperse the storage times of each storage area unit.

5. The memory system according to claim 4, It is characterized in that The plurality of storage area units include a first storage area unit and a second storage area unit, and the number of times the first storage area unit is written is greater than the number of times the second storage area unit is written; The number of times the first storage area unit is written reaches the preset control threshold, and the number of times the second storage area unit is written does not reach the preset control threshold; The processor is further configured to perform at least one of the following: selecting at least one of the idle area units as a target area unit; Selecting a region unit with the smallest number of write times from the second storage region units, and using the region unit with the smallest number of write times as a target region unit; and A region unit whose remaining number of times of being written is within a selected range is selected from the second storage region unit, and the region unit whose remaining number of times of being written is within the selected range is used as a target region unit.

6. The memory system according to claim 4, It is characterized in that The processor is further configured to perform: The storage capacity of the free area unit is set to 1% to 5% of the storage capacity of the storage area unit.

7. The memory system according to claim 5, It is characterized in that If the data written into the storage area unit is warm data, the storage capacity of the free area unit is set to 1% to 3% of the storage capacity of the storage area unit.

8. The memory system according to claim 5, It is characterized in that If the data written into the storage area unit is hot data, the storage capacity of the free area unit is set to 3% to 5% of the storage capacity of the storage area unit.

9. The memory system according to any one of claims 1 to 8, It is characterized in that The preset control thresholds corresponding to different storage area units in the same storage device are the same or different; and / or The storage device includes a plurality of storage devices, and the preset control thresholds corresponding to the storage area units of different storage devices are the same or different.

10. A wear leveling control method for a storage device, wherein the storage device comprises a plurality of storage area units, It is characterized in that The wear leveling control method comprises: Obtaining the number of times the storage area unit has been written; Determining whether the number of times the storage area unit is written reaches a preset control threshold; and When the preset control threshold is reached, wear leveling control is started to disperse the written data of each storage area unit.

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