High-performance graphite target ion implantation device

Abstract

The invention relates to the technical field of ion implanters, and discloses a high-performance graphite target ion implantation device which comprises an ion source assembly, the output end of the ion source assembly is communicated with a target chamber through an accelerating tube and a scanning assembly which are communicated with each other, the target chamber is communicated with vacuum equipment through an extraction opening, and a fixed base is fixedly installed in the target chamber; through the arrangement of the two cooling pipes which are perpendicular to each other and can independently perform linear reciprocating motion, a cooling area is formed at the intersection of the two cooling pipes, the surface of the graphite target material corresponding to the cooling area is cooled by the two cooling pipes, and the cooling area moves due to the movement of the bearing frame, so that the graphite target material is cooled. When the scanning assembly controls the ion implantation point position to move on the surface of the graphite target material to carry out grid type ion implantation, the dynamic movement of the cooling area ensures that the cooling effect of the cooling pipe can always accurately act on the ion implantation point position, and the problem of local high temperature of the graphite target material caused by the movement of the ion implantation point position is avoided.

Description

Technical Field

[0001] The invention relates to the technical field of ion implanters, and in particular to a high-performance graphite target ion implantation device. Background Art

[0002] Graphite, due to its unique two-dimensional layered structure, high electron mobility and excellent thermal conductivity, has become an ideal candidate for the next generation of high-performance electronic devices, energy storage systems and composite materials. However, how to effectively regulate the intrinsic properties of graphite to meet the requirements of specific applications has become a key challenge that needs to be solved urgently. Through precisely controlled ion implantation technology, the structure and properties of graphite targets can be modified at the atomic level, thereby creating new materials with excellent electrical, thermal, optical and mechanical properties.

[0003] In the specific steps of implementing the ion implantation process to treat graphite targets, the first task is to securely place the target graphite material in a dedicated target chamber and create a near-vacuum working environment through a vacuum system to eliminate the interference of gas molecules on the ion beam. Subsequently, the gaseous particles of the elements to be implanted are ionized into ions through an ion source. These ions are then sent into an accelerator to obtain the necessary kinetic energy addition so that they have the ability to penetrate the graphite substrate. After this series of preliminary preparations are completed, the real ion implantation is carried out under the command of the scanning system. The accelerated ion beam follows a pre-set trajectory and is evenly distributed on the surface of the graphite target in a grid pattern, rather than bombarding the entire area at one time. This approach is intended to achieve a balanced distribution of ion doses, ensure that all parts of the material are injected to the same degree, and avoid structural damage or performance degradation caused by local excessive implantation.

[0004] However, in the process of frequent collisions between ions and graphite atoms, a large amount of kinetic energy is quickly converted into thermal energy, causing the surface temperature of the target material to rise sharply. Although the conventional cooling system in the target chamber can achieve a global cooling effect, or use heat sink technology to direct heat to the external environment, these methods lack specificity and are difficult to deal with local high temperature problems caused by the continuous change of ion injection positions controlled by the scanning system. Local overheating can cause distortion and deformation of the graphite lattice, and even induce cracks and peeling, seriously affecting the integrity and mechanical properties of the material. Based on this, the present invention purposely provides a high-performance graphite target ion implantation device that can adapt to changes in ion implantation paths and instantly cool ion implantation points. Summary of the invention

[0005] The purpose of the present invention is to provide a high-performance graphite target ion implantation device to address the deficiencies of the prior art, so as to solve the technical problem that the existing cooling system cannot flexibly adapt to changes in the ion implantation path, and the continuous change of the ion implantation position will cause local high temperature of the graphite target.

[0006] The purpose of the present invention can be achieved through the following technical solutions: A high-performance graphite target ion implantation device, comprising: An ion source assembly, the output end of which is connected to a target chamber through an accelerating tube and a scanning assembly that are connected to each other, the target chamber is connected to a vacuum device through an exhaust port, and a fixed base is fixedly installed in the target chamber, a graphite target material is clamped and fixed on the fixed base, and a fixed bracket is fixedly installed in the target chamber; There are two carriers, both of which are slidably mounted on the fixed bracket, and the two carriers are driven to move by two driving sources respectively, the two carriers are arranged vertically and staggered, each carrier is provided with a cooling pipe, the cooling pipe is close to the graphite target, and is connected to the external circulation cooling component through a telescopic pipe, and a cooling zone is provided around the intersection of the projections of the two cooling pipes on the graphite target, and the driving source is connected to the scanning component; When the ion source passes through the ion source assembly and the accelerating tube, the scanning assembly controls the ion injection into the cooling zone on the graphite target. When the scanning assembly controls the movement of the ion injection point, the two driving sources drive the carrier frame perpendicular to the movement direction of the ion injection point to move synchronously with the ion injection point.

[0007] As a further solution of the present invention: the number of cooling tubes in each supporting frame is two, and the cooling zone is located between the four cooling tubes.

[0008] As a further solution of the present invention: the cooling pipe is slidably arranged in the carrier frame, and is driven by the driving assembly to reciprocate, each carrier frame corresponds to a driving assembly and a transmission assembly, when the driving source drives the carrier frame to move, the transmission assembly drives the cooling pipe to reciprocate in the carrier frame through the driving assembly, and the moving direction of the carrier frame is perpendicular to the moving direction of the cooling pipe.

[0009] As a further solution of the present invention: the driving assembly includes a sliding frame, a waist-shaped groove, a cam, a linkage wheel and an extension frame, the sliding frame is slidably installed in the supporting frame, the cooling pipe is fixedly installed in the sliding frame, the waist-shaped groove is opened on the sliding frame, the extension frame is fixedly installed on the supporting frame, the cam is rotatably installed on the extension frame, and it is driven to rotate by the transmission assembly, the linkage wheel is fixedly installed on the cam, it is eccentrically arranged, and it is slidably connected to the waist-shaped groove.

[0010] As a further solution of the present invention: the transmission assembly includes a transmission gear and a rack plate, the transmission gear is rotatably mounted on the extension frame, it is fixedly connected to the cam shaft, and the two are coaxially arranged, the rack plate is fixedly mounted on the inner wall of the target chamber, and it meshes with the transmission gear.

[0011] As a further solution of the present invention: the cooling tube is in an arched shape, and its surface facing the graphite target is a surface corresponding to the arc edge.

[0012] As a further solution of the present invention: a cavity filled with cooling water is opened in the fixed base, and the two sides of the cavity are respectively connected to a water inlet and a water outlet, the water inlet and the water outlet are both located outside the target chamber, and the two are connected through a first circulation cooling component, and the side of the fixed base that is in contact with the graphite target material is made of heat-conductive material.

[0013] As a further solution of the present invention: a heat sink fin is fixedly installed in the cavity, one end of the heat sink fin is in contact with the graphite target, a baffle is fixedly installed in the heat sink fin, a channel exists between the baffle and the cavity, and the channel is close to the graphite target.

[0014] Beneficial effects of the present invention: 1. In the present invention, two cooling pipes are arranged perpendicularly to each other and can independently perform linear reciprocating movement, so that a cooling zone is formed at the intersection of the two cooling pipes. The surface of the graphite target corresponding to the cooling zone will be cooled by the two cooling pipes, and the movement of the carrier will cause the cooling zone to move. When the scanning component controls the ion injection point to move on the surface of the graphite target for grid-type ion injection, the dynamic movement of the cooling zone ensures that the cooling effect of the cooling pipe can always accurately act on the ion injection point, avoiding the problem of local high temperature of the graphite target when the ion injection point moves, and the ion point can exchange heat with the cooling water at different points of the cooling pipe during the movement process, thus avoiding the problem of frequent heat absorption of cooling water at one point leading to a decrease in heat exchange capacity; 2. In the present invention, by arranging four cooling tubes, the cooling zone is located between the four cooling tubes, that is, there are always four cooling tubes around the ion implantation point to cool it down, and the cooling effect is more obvious. When the ion implantation moves, no matter what the moving direction is, there can be a cooling tube that can move directly from above the point close to it, so that secondary cooling can be performed to avoid local overheating. 3. In the present invention, the cooling pipe can reciprocate in the support frame, and the moving direction of the support frame is perpendicular to the moving direction of the cooling pipe. This means that when the support frame moves synchronously with the ion injection point, the moving cooling pipe can change the position of the ion injection point on the cooling pipe by active reciprocating movement, so that the cooling water at different points of the moving cooling pipe can exchange heat with the ion injection point. This avoids the problem of frequent heat absorption of cooling water at one point leading to a decrease in heat exchange capacity, and always ensures the cooling effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present invention will be further described below in conjunction with the accompanying drawings.

[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic structural diagram of a cross-section of the target chamber in the present invention; Figure 3 It is a schematic diagram of the structure of the driving component in the present invention; Figure 4 It is a structural schematic diagram of the sliding frame in the present invention; Figure 5 It is a schematic diagram of the structure of the extension frame in the present invention; Figure 6 It is a structural schematic diagram of the graphite target material taking and placing state in the present invention; Figure 7 It is a structural schematic diagram of the graphite target material ion implantation state in the present invention; Figure 8 It is a structural schematic diagram of the fixed base in the present invention; Fig. 9 It is a schematic diagram of the structure of the cavity in the present invention.

[0017] In the figure: 1. ion source assembly; 2. acceleration tube; 3. scanning assembly; 4. target chamber; 401, exhaust port; 5. fixed base; 6. graphite target; 7. fixed bracket; 8. carrier frame; 9. sliding frame; 10. cooling tube; 11. driving assembly; 12. waist-shaped groove; 13. cam; 14. linkage wheel; 15. extension frame; 16. transmission assembly; 17. transmission gear; 18. rack plate; 19. water inlet; 20. water outlet; 21. heat dissipation fins; 22. baffle; 23. cavity; 24. cooling zone. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] See also Figure 1-Figure 9 As shown, the present invention is a high-performance graphite target ion implantation device, comprising: An ion source assembly 1, whose output end is connected to a target chamber 4 through an accelerating tube 2 and a scanning assembly 3 that are connected to each other, the target chamber 4 is connected to a vacuum device through an exhaust port 401, and a fixed base 5 is fixedly installed therein, a graphite target material 6 is clamped and fixed on the fixed base 5, and a fixed bracket 7 is fixedly installed in the target chamber 4; There are two carriers 8, both of which are slidably mounted on the fixed bracket 7, and the two carriers 8 are driven to move by two driving sources respectively, the two carriers 8 are arranged vertically and staggered, and a cooling pipe 10 is arranged in each carrier 8, the cooling pipe 10 is close to the graphite target 6, and is connected to the external circulation cooling component through a telescopic pipe, and a cooling zone 24 is arranged around the intersection of the projections of the two cooling pipes 10 on the graphite target 6, and the driving source is connected to the scanning component 3; After the ion source passes through the ion source assembly 1 and the accelerating tube 2, the scanning assembly 3 controls the ion injection into the cooling zone 24 on the graphite target 6, and when the scanning assembly 3 controls the movement of the ion injection point, the two driving sources drive the carrier 8 perpendicular to the movement direction of the ion injection point to move synchronously with the ion injection point.

[0020] In one case of this embodiment, the target chamber 4 is provided with an opening and closing door for storing the graphite target material 6, the ion source assembly 1 includes an ion source housing, a thermal electron emission device, a gas introduction system, a magnetic field system, etc., the accelerating tube 2 includes an accelerating electrode, a vacuum system, etc., the scanning assembly 3 includes a scanning electrode, a focusing system, a control system, etc., the vacuum equipment includes a vacuum pump, a vacuum gauge, a valve, etc., and the external circulation cooling assembly includes a circulation pump, a condenser, a conveying pipeline, etc. It should be noted that the above components are all prior art, and the present invention does not improve them. Therefore, it is not necessary to disclose their specific mechanical structure and circuit structure, and it does not affect the integrity of the present invention; the two driving sources can use electric cylinders, motors drive threaded rods and other components, and can also use other mechanisms that can achieve linear reciprocating motion, which is not specifically limited in this embodiment; In actual application of this embodiment, the opening and closing door on the target chamber 4 is first opened, the graphite target material 6 is placed on the fixed base 5 and fixed, and then the opening and closing door is closed and the target chamber 4 is evacuated to a vacuum working environment through a vacuum device. Subsequently, the gaseous particles of the element to be injected are ionized into ions through the ion source component 1, and then the ions are sent into the accelerating tube 2 to obtain the necessary kinetic energy addition. Finally, the ion injection is carried out under the control of the scanning component 3, that is, the accelerated ion beam moves along a preset trajectory and is evenly distributed on the surface of the graphite target material 6 in a grid pattern.

[0021] like Figure 6 As shown in the figure, the driving source drives the carrier 8 to move to the edge of the fixed bracket 7, which will not block the placement of the graphite target 6. Before the graphite target 6 is prepared for ion implantation, the scanning component 3 controls the initial position of the ion implantation on the graphite target 6. The scanning component 3 controls the two carriers 8 to move through the driving source so that the cooling zone 24 corresponds to the initial position, and then the ion implantation is started. Figure 7As shown in the figure, the cooling zone 24 is the point on the graphite target 6 that receives the ion implantation, and the cooling zone 24 is near the two cooling pipes 10. The low temperature emitted by the cooling water circulating in the cooling pipes 10 can significantly reduce the local high temperature that occurs during the ion implantation. As the process progresses, Figure 7 As shown in the figure, when the scanning component 3 controls the lateral movement of the ion injection point, the driving source will drive the carrier 8 perpendicular to the moving direction of the ion injection point to move synchronously with the ion injection point, that is, the longitudinally arranged carrier 8 moves horizontally. During this movement, the distance between the ion injection point and the transversely arranged cooling tube 10 is always consistent, and the synchronous transverse movement of the longitudinally arranged carrier 8 ensures that the distance between the ion injection point and the longitudinally arranged cooling tube 10 is always consistent. At this time, the cooling zone 24 always moves with the ion injection point, so that the two cooling tubes 10 can always keep abreast of the moving ion injection point. Cooling measures are taken at the injection point; similarly, when the scanning component 3 controls the longitudinal movement of the ion injection point, it can also ensure that cooling measures are always taken for the moving ion injection point; and when the ion injection point moves, it always moves along a temporarily fixed cooling tube 10. At this time, the position where the ion injection generates high temperature is dynamic, so that heat can be exchanged with the cooling water at different points of the cooling tube 10, thus avoiding the problem of frequent heat absorption of cooling water at one point leading to a decrease in heat exchange capacity, and the external circulation cooling component can further improve the cooling capacity of the cooling tube 10 for the graphite target 6.

[0022] like Figure 1-Figure 2 As shown, as a preferred embodiment of the present invention, the number of cooling tubes 10 in each carrier frame 8 is two, and the cooling zone 24 is located between the four cooling tubes 10 .

[0023] In practical application, if Figure 2 As shown in the figure, four cooling tubes 10 are arranged so that the cooling zone 24 is located between the four cooling tubes 10, that is, there are always four cooling tubes 10 around the ion injection point to cool it down, and the cooling effect is more obvious. When the ion injection moves, no matter what the moving direction is, there is a cooling tube 10 that can move directly from above the point close to it, so that secondary cooling can be performed to avoid local overheating.

[0024] like Figure 1-Figure 7 As shown, as a preferred embodiment of the present invention, the cooling pipe 10 is slidably arranged in the carrier frame 8, and is driven by the driving component 11 to reciprocate, and each carrier frame 8 corresponds to a driving component 11 and a transmission component 16. When the driving source drives the carrier frame 8 to move, the transmission component 16 drives the cooling pipe 10 to reciprocate in the carrier frame 8 through the driving component 11, and the moving direction of the carrier frame 8 is perpendicular to the moving direction of the cooling pipe 10.

[0025] In actual application of this embodiment, when the driving source drives the carrier 8 to move, the transmission component 16 drives the cooling tube 10 to reciprocate in the carrier 8 through the driving component 11, and the moving direction of the carrier 8 is perpendicular to the moving direction of the cooling tube 10. This means that when the carrier 8 moves synchronously with the ion injection point, the moving cooling tube 10 can change the position of the ion injection point on the cooling tube 10 corresponding to the ion injection point through active reciprocating movement, so that the cooling water at different points of the moving cooling tube 10 can exchange heat with the ion injection point, thereby avoiding the problem of frequent heat absorption of cooling water at one point leading to a decrease in heat exchange capacity, and always ensuring the cooling effect.

[0026] like Figure 3-Figure 5 As shown, as a preferred embodiment of the present invention, the driving component 11 includes a sliding frame 9, a waist-shaped groove 12, a cam 13, a linkage wheel 14 and an extension frame 15. The sliding frame 9 is slidably installed in the supporting frame 8, the cooling pipe 10 is fixedly installed in the sliding frame 9, the waist-shaped groove 12 is opened on the sliding frame 9, the extension frame 15 is fixedly installed on the supporting frame 8, the cam 13 is rotatably installed on the extension frame 15, and it is driven to rotate by the transmission component 16, and the linkage wheel 14 is fixedly installed on the cam 13, which is eccentrically arranged and slidably connected with the waist-shaped groove 12.

[0027] In actual application of this embodiment, when the cooling tube 10 needs to reciprocate on the carrier 8, the transmission assembly 16 drives the cam 13 to rotate, and the eccentrically arranged linkage wheel 14 on the cam 13 changes its position in the waist-shaped groove 12, so that the sliding frame 9 drives the cooling tube 10 to move. Specifically, Figure 3 As shown in the example, when the cam 13 rotates clockwise, the sliding frame 9 and the cooling tube 10 will first move to the left side in the supporting frame 8, and then move to the right side. In this way, when the supporting frame 8 moves, the contact position of the cooling tube 10 with the centrifugal injection point is changed by the movement of the cooling tube 10.

[0028] like Figure 3-Figure 5 As shown, as a preferred embodiment of the present invention, the transmission assembly 16 includes a transmission gear 17 and a rack plate 18. The transmission gear 17 is rotatably mounted on the extension frame 15, and is fixedly connected to the rotating shaft of the cam 13, and the two are coaxially arranged. The rack plate 18 is fixedly mounted on the inner wall of the target chamber 4, and is meshed with the transmission gear 17.

[0029] In actual application of this embodiment, since the transmission gear 17 is rotatably installed on the extension frame 15, when the support frame 8 moves, it will drive the extension frame 15 and the transmission gear 17 to move synchronously, and the transmission gear 17 is engaged with the rack plate 18, so the transmission gear 17 will rotate when moving, thereby driving the cam 13 to rotate through the transmission gear 17. The design of such a linkage mechanism ensures that when the support frame 8 moves, the reciprocating movement of the cooling pipe 10 can be started synchronously.

[0030] like Figure 3-Figure 5 As shown, as a preferred embodiment of the present invention, the cooling tube 10 is in an arched shape, and its surface facing the graphite target 6 is a surface corresponding to the arc edge.

[0031] In actual application of this embodiment, by designing the cooling tube 10 in an arched shape and placing the bottom edge of the cooling tube 10 close to the graphite target 6, the heat exchange area between the cooling tube 10 and the graphite target 6 can be expanded, thereby improving the cooling effect on the ion implantation point.

[0032] like Figure 8-Figure 9 As shown, as a preferred embodiment of the present invention, a cavity 23 filled with cooling water is opened in the fixed base 5, and the two sides of the cavity 23 are respectively connected with the water inlet 19 and the water outlet 20, and the water inlet 19 and the water outlet 20 are both located outside the target chamber 4, and the two are connected through the first circulation cooling component, and the side of the fixed base 5 that is in contact with the graphite target material 6 is a heat-conductive material.

[0033] In one case of this embodiment, the first circulating cooling component includes a circulating pump, a heat exchanger, a conveying pipeline, etc. It should be noted that the above components are all prior arts, and the present invention does not improve them. Therefore, there is no need to disclose their specific mechanical structure and circuit structure, which does not affect the integrity of the present invention.

[0034] In actual application of this embodiment, when the graphite target material 6 is installed on the fixed base 5, there is only a layer of heat-conducting material between the graphite target material 6 and the cavity 23. Therefore, when the graphite target material 6 is ion-implanted, the high temperature energy generated by it can be transferred to the cooling water in the cavity 23 through the heat-conducting material for heat exchange, thereby cooling the graphite target material 6. The cooling water can be circulated and cooled by the first circulating cooling component to ensure the heat exchange effect of the cooling water.

[0035] like Figure 8-Figure 9 As shown, as a preferred embodiment of the present invention, a heat sink 21 is fixedly installed in the cavity 23, one end of the heat sink 21 is in contact with the graphite target 6, a baffle 22 is fixedly installed in the heat sink 21, a channel exists between the baffle 22 and the cavity 23, and the channel is close to the graphite target 6.

[0036] In practical application, if Fig. 9 As shown, the heat dissipation fins 21 can further improve the thermal conductivity of the graphite target 6, and can expand the heat exchange area with the cooling water. The addition of the baffle 22 changes the flow direction of the cooling water during circulation in the cavity 23. As shown by the arrow in the figure, the flow direction of the cooling water is closer to the graphite target 6, thereby improving the cooling effect on the graphite target 6.

[0037] Working principle of the present invention: The above-mentioned embodiment of the present invention provides a high-performance graphite target ion implantation device. First, the opening and closing door on the target chamber 4 is opened, and the graphite target 6 is placed on the fixed base 5 and fixed. Then, the opening and closing door is closed and the target chamber 4 is evacuated to a vacuum working environment through a vacuum device. Subsequently, the gaseous particles of the element to be injected are ionized into ions through the ion source component 1. Then, the ions are sent into the accelerating tube 2 to obtain the necessary kinetic energy addition. Finally, the ion implantation is carried out under the control of the scanning component 3, that is, the accelerated ion beam moves along a preset trajectory and is evenly distributed on the surface of the graphite target 6 in a grid pattern. When the scanning component 3 controls the change of the ion injection point, the dynamic movement of the cooling zone 24 ensures that the cooling effect of the cooling tube 10 can always accurately act on the ion injection point.

[0038] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A high-performance graphite target ion implantation device, characterized in that: include: An ion source component (1), the output end of which is connected to a target chamber (4) via an accelerating tube (2) and a scanning component (3) which are connected to each other; the target chamber (4) is connected to a vacuum device via an exhaust port (401); a fixed base (5) is fixedly installed in the target chamber; a graphite target material (6) is clamped and fixed on the fixed base (5); and a fixed bracket (7) is fixedly installed in the target chamber (4); There are two carriers (8), both of which are slidably mounted on the fixed bracket (7), and the two carriers (8) are driven to move by two driving sources respectively, the two carriers (8) are arranged vertically and staggered, each carrier (8) is provided with a cooling pipe (10), the cooling pipe (10) is close to the graphite target (6), and is connected to the external circulation cooling component through a telescopic pipe, a cooling zone (24) is provided around the intersection of the projections of the two cooling pipes (10) on the graphite target (6), and the driving source is connected to the scanning component (3); When the ion source passes through the ion source assembly (1) and the accelerating tube (2), the scanning assembly (3) controls the ion injection into the cooling zone (24) on the graphite target material (6), and when the scanning assembly (3) controls the movement of the ion injection point, the two driving sources drive the carrier (8) perpendicular to the movement direction of the ion injection point to move synchronously with the ion injection point.

2. A high performance graphite target ion implantation device according to claim 1, characterized in that: The number of cooling tubes (10) in each carrier frame (8) is two, and the cooling zone (24) is located between the four cooling tubes (10).

3. A high performance graphite target ion implantation device according to claim 2, characterized in that: The cooling pipe (10) is slidably arranged in the carrier frame (8) and is driven by the driving assembly (11) to reciprocate. Each carrier frame (8) corresponds to a driving assembly (11) and a transmission assembly (16). When the driving source drives the carrier frame (8) to move, the transmission assembly (16) drives the cooling pipe (10) to reciprocate in the carrier frame (8) through the driving assembly (11), and the moving direction of the carrier frame (8) is perpendicular to the moving direction of the cooling pipe (10).

4. A high performance graphite target ion implantation device according to claim 3, characterized in that: The driving assembly (11) comprises a sliding frame (9), a waist-shaped groove (12), a cam (13), a linkage wheel (14) and an extension frame (15); the sliding frame (9) is slidably mounted in the supporting frame (8); the cooling pipe (10) is fixedly mounted in the sliding frame (9); the waist-shaped groove (12) is opened on the sliding frame (9); the extension frame (15) is fixedly mounted on the supporting frame (8); the cam (13) is rotatably mounted on the extension frame (15) and is driven to rotate by the transmission assembly (16); the linkage wheel (14) is fixedly mounted on the cam (13), is eccentrically arranged, and is slidably connected to the waist-shaped groove (12).

5. A high performance graphite target ion implantation device according to claim 4, characterized in that: The transmission assembly (16) comprises a transmission gear (17) and a rack plate (18); the transmission gear (17) is rotatably mounted on the extension frame (15), is fixedly connected to the rotating shaft of the cam (13), and the two are coaxially arranged; the rack plate (18) is fixedly mounted on the inner wall of the target chamber (4), and is meshed with the transmission gear (17).

6. A high performance graphite target ion implantation device according to claim 1, characterized in that: The cooling tube (10) is in an arched shape, and its surface facing the graphite target (6) is a surface corresponding to the arc edge.

7. The high performance graphite target ion implantation device according to claim 1, characterized in that: A cavity (23) filled with cooling water is provided in the fixed base (5), and two sides of the cavity (23) are respectively connected to a water inlet (19) and a water outlet (20), and the water inlet (19) and the water outlet (20) are both located outside the target chamber (4), and the two are connected through a first circulation cooling component, and a surface of the fixed base (5) that contacts the graphite target material (6) is made of a heat-conducting material.

8. A high performance graphite target ion implantation device according to claim 7, characterized in that: A heat dissipation fin (21) is fixedly installed in the cavity (23), one end of the heat dissipation fin (21) is in contact with the graphite target material (6), a baffle (22) is fixedly installed in the heat dissipation fin (21), a channel exists between the baffle (22) and the cavity (23), and the channel is close to the graphite target material (6).

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