Method for manufacturing multi-layer grating structure
The pattern is transferred to the hard mask layer through one main pattern exposure and etching, and a mask plate with low accuracy requirements is used to form a large line width etching window, which solves the error problem in multi-layer grating production, improves device consistency and reduces process costs.
Patent Information
- Application Number
- CN202411640823.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-18
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2044-11-18
AI Technical Summary
In the production of multi-layer gratings, multiple fine main pattern exposures are prone to introduce alignment errors and incision errors, affecting device consistency, reducing production efficiency and increasing costs.
The pattern is transferred to the hard mask layer through a primary pattern exposure and etching. The mask plate with low accuracy requirements is then used to form a large line width etching window, and then the etched trenches are blocked, and the etched trenches are etched to form a multi-layer trench grating structure with different depths.
The number of exposures of the main pattern is reduced, the requirements for inscribed errors are reduced, the consistency of the device is improved, and process control is simplified through the dielectric stacking structure and process costs are reduced.