Organic light emitting diode display

By using an overlapping layer in an organic light emitting diode display and applying a specific voltage, the uneven display quality problem caused by the deviation of the driving transistor characteristics is solved, and the charging rate of the data voltage and the brightness and response speed of the display are improved.

CN119169969APending Publication Date: 2024-12-20SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202411275337.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2018-06-22
Filing Date
2019-05-22
Publication Date
2024-12-20

AI Technical Summary

Technical Problem

The characteristic deviation of the driving transistors in existing organic light emitting diode displays leads to uneven display quality, affecting image performance.

Method used

By introducing an overlapping layer into an organic light emitting diode display and applying a specific driving voltage and initialization voltage thereon, the characteristic deviation of the driving transistor, the charging rate of the data voltage is increased, and the driving transistor is made by appropriate voltage configuration. The data range is wider, reducing the impact on the gate and source voltage.

Benefits of technology

The reduction of the characteristic deviation of the driving transistor is achieved, the uniformity of display quality and the charging efficiency of data voltage are improved, and the brightness and response speed of the display are enhanced.

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Abstract

An organic light emitting diode display according to the present invention may include an overlapping layer disposed on a substrate, wherein a pixel thereof includes: an organic light emitting diode; a second transistor connected to the scan line and the data line; a driving transistor including a gate electrode, an input terminal, and an output terminal, and applying a current to the organic light emitting diode through the output terminal; and a voltage application transistor for applying a voltage to the overlapping layer, an output of the second transistor is connected to an input terminal of the driving transistor, and the overlapping layer overlaps the driving transistor on a plane and is disposed between the driving transistor and the substrate.
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Citation Information

Patent Citations

  • High-temperature exhaust sensor

    KR1020180071966A

  • KR2019/006139