Filter

Abstract

A filter (10) is provided with: a plurality of resonators (11) each provided with a via electrode section (20) and capacitor electrodes (18, 19); a first shield conductor (12A); and a first coupling capacitance electrode (98) which is not connected to any one of the plurality of resonators (11), faces the first shield conductor (12A), and is formed in a layer where the first capacitor electrode (18B) is formed, and a portion of the first coupling capacitance electrode (98) is located between the second capacitor electrode (19C) and the first shield conductor (12A).

Description

Technical Field

[0001] The present invention relates to filters. Background Art

[0002] A resonator is proposed, which has: a strip line that is opposite to a shield conductor formed on one main surface side of a dielectric substrate; and a via electrode, one end of which is connected to the shield conductor formed on the other main surface side of the dielectric substrate and the other end of which is connected to the strip line (Japanese Patent Gazette No. 2020-198482). Summary of the invention

[0003] A technique for achieving better filter characteristics is desired.

[0004] An object of the present invention is to solve the above-mentioned problems.

[0005] A filter according to one aspect of the present invention comprises: a dielectric substrate having a first main surface and a second main surface located on the opposite side of the first main surface; a first shield conductor formed on the first main surface side of the dielectric substrate; a second shield conductor formed on the second main surface side of the dielectric substrate; a plurality of resonators each having a via electrode portion formed between the first shield conductor and the second shield conductor and a capacitor electrode connected to one end of the via electrode portion; and a first coupling capacitor electrode which is not connected to any of the plurality of resonators, is formed on a layer on which a first capacitor electrode among the plurality of capacitor electrodes is formed, and is opposed to the first shield conductor, the layer on which the first capacitor electrode is formed is located between a layer on which a second capacitor electrode among the plurality of capacitor electrodes is formed and a layer on which the first shield conductor is formed, and a portion of the first coupling capacitor electrode is located between the second capacitor electrode and the first shield conductor.

[0006] According to the present invention, even when a dimensional error or the like occurs when forming capacitor electrodes, it is possible to suppress degradation of filter characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a perspective view showing a filter according to the first embodiment. Figure 2 It is a top view showing the filter using the first embodiment. Figure 3A This is a cross-sectional view showing a part of the filter according to the first embodiment. Figure 3B This is a cross-sectional view showing a part of the filter according to the first embodiment. Figure 4 It is a perspective view showing a filter according to the first embodiment. Figure 5 It is a perspective view showing a filter according to the first embodiment. Figure 6 It is a top view showing the filter using the first embodiment. Figure 7 It is a top view showing the filter using the first embodiment. Figure 8 It is a perspective view showing a filter according to the first embodiment. Fig. 9 It is a top view showing the filter using the first embodiment. Fig.10 It is a perspective view showing a filter according to the first embodiment. Fig.11 It is a top view showing the filter using the first embodiment. Fig.12 It is a perspective view showing a filter according to the first embodiment. Fig.13 It is a top view showing the filter using the first embodiment. Fig.14 It is a perspective view showing a filter according to the first embodiment. Fig.15 It is a top view showing the filter using the first embodiment. Fig.16 This is a graph illustrating the frequency characteristics of a filter using a comparative example. Fig.17 This is a graph illustrating the frequency characteristics of the filter used in the first embodiment. Fig.18 It is a perspective view showing a filter according to the second embodiment. Fig.19 It is a top view showing a filter according to the second embodiment. Fig. 20A This is a cross-sectional view showing a part of the filter according to the second embodiment. Fig. 20B This is a cross-sectional view showing a part of the filter according to the second embodiment. Fig.21 It is a perspective view showing a filter according to the second embodiment. Fig. 22 It is a perspective view showing a filter according to the second embodiment. Fig.23 It is a top view showing a filter according to the second embodiment. Fig.24 It is a top view showing a filter according to the second embodiment. Fig.25It is a perspective view showing a filter according to the second embodiment. Fig.26 It is a top view showing a filter according to the second embodiment. Fig. 27 It is a perspective view showing a filter according to the second embodiment. Fig.28 It is a top view showing a filter according to the second embodiment. Fig.29 It is a perspective view showing a filter according to the second embodiment. Fig.30 It is a top view showing a filter according to the second embodiment. Fig.31 It is a perspective view showing a filter according to the second embodiment. Fig.32 It is a top view showing a filter according to the second embodiment. Fig.33 It is a top view showing a filter according to the second embodiment. DETAILED DESCRIPTION

[0008] [First embodiment] The filter according to the first embodiment will be described using the drawings. Figure 1 It is a perspective view showing a filter according to the first embodiment. Figure 2 It is a top view showing the filter using the first embodiment. Figure 3A and Figure 3B This is a cross-sectional view showing a part of the filter according to the first embodiment. Figure 4 and Figure 5 It is a perspective view showing a filter according to the first embodiment. Figure 6 and Figure 7 It is a top view showing the filter using the first embodiment. Figure 8 It is a perspective view showing a filter according to the first embodiment. Fig. 9 It is a top view showing the filter using the first embodiment. Fig.10 It is a perspective view showing a filter according to the first embodiment. Fig.11 It is a top view showing the filter using the first embodiment. Fig.12 It is a perspective view showing a filter according to the first embodiment. Fig.13 It is a top view showing the filter using the first embodiment. Fig.14 It is a perspective view showing a filter according to the first embodiment. Fig.15 FIG. 1 is a top view showing a filter using the first embodiment. Figures 1 to 15 In the above description, some components are omitted as appropriate.

[0009] like Figure 1 As shown, the filter 10 according to the present embodiment includes a dielectric substrate 14. The dielectric substrate 14 is formed in a rectangular parallelepiped shape, for example, but is not limited thereto. The dielectric substrate 14 is formed by laminating a plurality of ceramic sheets (dielectric ceramic sheets).

[0010] The dielectric substrate 14 has two main surfaces 14a and 14b and four side surfaces 14c to 14f. The main surface 14a and the main surface 14b are located on opposite sides. The direction along the normal direction of the side surface 14c and the side surface 14d is set as the X direction. More specifically, the normal direction of the side surfaces 14c and 14d is set as the X direction. In other words, the length direction of the dielectric substrate 14 is set as the X direction. The direction along the normal direction of the side surface 14e and the side surface 14f is set as the Y direction. More specifically, the normal direction of the side surfaces 14e and 14f is set as the Y direction. The direction along the normal direction of the main surfaces 14a and 14b is set as the Z direction. More specifically, the normal direction of the main surfaces 14a and 14b is set as the Z direction.

[0011] The shield conductor 12A is formed on the main surface 14b side of the dielectric substrate 14. That is, the shield conductor 12A is formed on the lower side of the dielectric substrate 14. The shield conductor 12B is formed on the main surface 14a side of the dielectric substrate 14. That is, the shield conductor 12B is formed on the upper side of the dielectric substrate 14.

[0012] An input / output terminal (first input / output terminal) 22A is formed on the side surface 14c of the dielectric substrate 14. An input / output terminal (second input / output terminal) 22B is formed on the side surface 14d of the dielectric substrate 14.

[0013] A shield conductor 12Ca is formed on a side surface 14e of the dielectric substrate 14. A shield conductor 12Cb is formed on a side surface 14f of the dielectric substrate 14. The shield conductors 12Ca and 12Cb are formed in a plate shape and are formed along the longitudinal direction of the dielectric substrate 14.

[0014] In the dielectric substrate 14, capacitor electrodes (strip lines) 18B and 18D are formed opposite to the shield conductor 12A. The capacitor electrodes 18B and 18D are formed on the same layer. In other words, the capacitor electrodes 18B and 18D are formed on the same ceramic sheet (not shown). In the following description, the reference numeral 18 is used when the capacitor electrodes 18B and 18D are not distinguished from each other.

[0015] Capacitor electrodes (strip lines) 19A, 19C, and 19E are formed in the dielectric substrate 14. The capacitor electrodes 19A, 19C, and 19E are formed on the same layer. In other words, the capacitor electrodes 19A, 19C, and 19E are formed on the same ceramic sheet (not shown). The layer on which the capacitor electrodes 19A, 19C, and 19E are formed is located above the layer on which the capacitor electrode 18 is formed. Between the capacitor electrodes 19A, 19C, and 19E and the capacitor electrode 18, there are one or more ceramic sheets (not shown). In the following, when the capacitor electrodes 19A, 19C, and 19E are described without distinguishing each other, the reference numeral 19 is used.

[0016] like Figure 2 As shown, the capacitor electrode 18 is point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The capacitor electrode 18B and the capacitor electrode 18D are point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In this embodiment, the capacitor electrodes 18 are point-symmetrically formed in order to obtain good frequency characteristics.

[0017] The capacitor electrode 19 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The capacitor electrode 19A and the capacitor electrode 19E are formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The capacitor electrode 19C is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In the present embodiment, the capacitor electrode 19 is formed point-symmetrically in order to obtain good frequency characteristics.

[0018] The capacitor electrode 18B includes partial patterns (electrode patterns) 18B1 to 18B3. The partial pattern 18B1 is connected to the via electrode portion 20B described later. One end of the partial pattern 18B2 is connected to the partial pattern 18B1. The partial pattern 18B2 protrudes in the -X direction. One end of the partial pattern 18B3 is connected to the partial pattern 18B1. The partial pattern 18B3 protrudes in the +X direction.

[0019] The capacitor electrode 18D includes partial patterns (electrode patterns) 18D1 to 18D3. The partial pattern 18D1 is connected to the via electrode portion 20D described later. One end of the partial pattern 18D2 is connected to the partial pattern 18D1. The partial pattern 18D2 protrudes in the +X direction. One end of the partial pattern 18D3 is connected to the partial pattern 18D1. The partial pattern 18D3 protrudes in the -X direction.

[0020] The capacitor electrode 19A includes partial patterns (electrode patterns) 19A1 to 19A3. The partial pattern 19A1 is connected to the via electrode portion 20A described later. One end of the partial pattern 19A2 is connected to the partial pattern 19A1. The partial pattern 19A2 protrudes in the +X direction. One end of the partial pattern 19A3 is connected to the partial pattern 19A1. The partial pattern 19A3 protrudes in the +Y direction. A portion of the partial pattern 19A3 is opposite to a portion of the partial pattern 18B2. A portion of the partial pattern 19A3 and a portion of the partial pattern 18B2 overlap each other when viewed from above.

[0021] The capacitor electrode 19C includes partial patterns (electrode patterns) 19C1 to 19C3. The partial pattern 19C1 is connected to a via electrode portion 20C (see Figure 1 ). One end of the partial pattern 19C2 is connected to the partial pattern 19C1. The partial pattern 19C2 protrudes in the +Y direction. One end of the partial pattern 19C3 is connected to the partial pattern 19C1. The partial pattern 19C3 protrudes in the -Y direction. A portion of the partial pattern 19C2 is opposite to a portion of the partial pattern 18B3. A portion of the partial pattern 19C2 and a portion of the partial pattern 18B3 overlap each other in a plan view. A portion of the partial pattern 19C3 is opposite to a portion of the partial pattern 18D3. A portion of the partial pattern 19C3 and a portion of the partial pattern 18D3 overlap each other in a plan view.

[0022] The capacitor electrode 19E includes partial patterns (electrode patterns) 19E1 to 19E3. The partial pattern 19E1 is connected to the via electrode portion 20E described later. One end of the partial pattern 19E2 is connected to the partial pattern 19E1. The partial pattern 19E2 protrudes in the -X direction. One end of the partial pattern 19E3 is connected to the partial pattern 19E1. The partial pattern 19E3 protrudes in the -Y direction. A portion of the partial pattern 19E3 is opposite to a portion of the partial pattern 18D2. A portion of the partial pattern 19E3 and a portion of the partial pattern 18D2 overlap each other when viewed from above.

[0023] Electrode patterns 19a and 19d connected to the shield conductor 12Ca and electrode patterns 19b and 19c connected to the shield conductor 12Cb are also formed in the dielectric substrate 14. The electrode pattern 19a is located in the -Y direction relative to the partial pattern 19A1. The electrode pattern 19b is located in the +Y direction relative to the partial pattern 19E1. The electrode pattern 19c is located in the +Y direction relative to the partial pattern 18B1. The electrode pattern 19d is located in the -Y direction relative to the partial pattern 18D1.

[0024] like Figure 1As shown, via electrode portions 20A to 20E are further formed in the dielectric substrate 14. When the via electrode portions are described without being distinguished from each other, reference numeral 20 is used, and when the via electrode portions are described while being distinguished from each other, reference numerals 20A to 20E are used.

[0025] The via electrode portion 20 is composed of a plurality of via electrodes 24. The via electrodes 24 are respectively embedded in through holes formed in the dielectric substrate 14.

[0026] One end (lower end) of the via electrode portion 20B, 20D is connected to the capacitor electrodes 18B, 18D. One end (lower end) of the via electrode portion 20A, 20C, 20E is connected to the capacitor electrodes 19A, 19C, 19E. The other end (upper end) of the via electrode portion 20 is connected to the shield conductor 12B. The length direction of the via electrode portion 20 is along the normal direction of the main surfaces 14a, 14b. In this way, the via electrode portion 20 is formed from the capacitor electrodes 18, 19 to the shield conductor 12B.

[0027] The capacitor electrode 19A and the via electrode portion 20A constitute the structure 16A. The capacitor electrode 18B and the via electrode portion 20B constitute the structure 16B. The capacitor electrode 19C and the via electrode portion 20C constitute the structure 16C. The capacitor electrode 18D and the via electrode portion 20D constitute the structure 16D. The capacitor electrode 19E and the via electrode portion 20E constitute the structure 16E. In addition, when describing without distinguishing each structure, the symbol 16 is used, and when describing by distinguishing each structure, the symbols 16A to 16E are used.

[0028] The filter 10 includes a plurality of resonators 11A to 11E each including a structure 16. When describing the resonators without distinguishing them from each other, reference numeral 11 is used, and when describing the resonators distinguishing them from each other, reference numerals 11A to 11E are used.

[0029] Resonator 11A and resonator 11B are arranged adjacent to each other. Resonator 11B and resonator 11C are arranged adjacent to each other. Resonator 11C and resonator 11D are arranged adjacent to each other. Resonator 11D and resonator 11E are arranged adjacent to each other.

[0030] like Figure 2 As shown, the via electrode portion 20A, the via electrode portion 20B, the via electrode portion 20C, the via electrode portion 20D, and the via electrode portion 20E are offset from each other in the X direction. The via electrode portion 20C is located at the center C of the dielectric substrate 14 when viewed from above. The position of the center P3 of the via electrode portion 20C when viewed from above coincides with the position of the center C of the dielectric substrate 14 when viewed from above.

[0031] The position of the center P3 of the via electrode portion 20C in the X direction is between the position of the center P1 of the via electrode portion 20A in the X direction and the position of the center P5 of the via electrode portion 20E in the X direction. Preferably, the distance between the position of the center P3 of the via electrode portion 20C in the X direction and the position of the center P1 of the via electrode portion 20A in the X direction is equal to the distance between the position of the center P3 of the via electrode portion 20C in the X direction and the position of the center P5 of the via electrode portion 20E in the X direction.

[0032] Similarly, the position of the center P3 of the via electrode portion 20C in the Y direction is between the position of the center P1 of the via electrode portion 20A in the Y direction and the position of the center P5 of the via electrode portion 20E in the Y direction. Preferably, the distance between the position of the center P3 of the via electrode portion 20C in the Y direction and the position of the center P1 of the via electrode portion 20A in the Y direction is equal to the distance between the position of the center P3 of the via electrode portion 20C in the Y direction and the position of the center P5 of the via electrode portion 20E in the Y direction.

[0033] The center P1 of the via electrode portion 20A is located at the same position as the center P4 of the via electrode portion 20D in the Y direction. The center P2 of the via electrode portion 20B is located at the same position as the center P5 of the via electrode portion 20E in the Y direction.

[0034] The via electrode portion 20B and the via electrode portion 20E are offset in the Y direction relative to the via electrode portion 20A and the via electrode portion 20D. The via electrode portion 20A and the via electrode portion 20D are located on the side 14e. That is, the distance between the via electrode portions 20A, 20D and the shielded conductor 12Ca is smaller than the distance between the via electrode portions 20A, 20D and the shielded conductor 12Cb. The via electrode portions 20B and 20E are located on the side 14f. That is, the distance between the via electrode portions 20B, 20E and the shielded conductor 12Cb is smaller than the distance between the via electrode portions 20B, 20E and the shielded conductor 12Ca.

[0035] The position of the center P2 of the via electrode portion 20B in the X direction is between the position of the center P1 of the via electrode portion 20A and the position of the center P3 of the via electrode portion 20C in the X direction. The position of the center P4 of the via electrode portion 20D in the X direction is between the position of the center P3 of the via electrode portion 20C and the position of the center P5 of the via electrode portion 20E in the X direction.

[0036] Thus, in the present embodiment, the position of the center P1 of the via electrode portion 20A and the position of the center P2 of the via electrode portion 20B are offset from each other in the X direction. In addition, according to the present embodiment, the position of the center P1 of the via electrode portion 20A and the position of the center P2 of the via electrode portion 20B are also offset from each other in the Y direction. Therefore, according to the present embodiment, the distance between the via electrode portions 20A and 20B can be increased without increasing the distance between the via electrode portions 20A and 20B in the X direction.

[0037] In addition, according to the present embodiment, the position of the center P2 of the via electrode portion 20B and the position of the center P3 of the via electrode portion 20C are offset from each other in the X direction. In addition, according to the present embodiment, the position of the center P2 of the via electrode portion 20B and the position of the center P3 of the via electrode portion 20C are also offset from each other in the Y direction. Therefore, according to the present embodiment, the distance between the via electrode portions 20B and 20C can be increased without increasing the distance between the via electrode portions 20B and 20C in the X direction.

[0038] In addition, according to the present embodiment, the position of the center P3 of the via electrode portion 20C and the position of the center P4 of the via electrode portion 20D are offset from each other in the X direction. In addition, according to the present embodiment, the position of the center P3 of the via electrode portion 20C and the position of the center P4 of the via electrode portion 20D are also offset from each other in the Y direction. Therefore, according to the present embodiment, the distance between the via electrode portions 20C and 20D can be increased without increasing the distance between the via electrode portions 20C and 20D in the X direction.

[0039] In addition, according to the present embodiment, the position of the center P4 of the via electrode portion 20D and the position of the center P5 of the via electrode portion 20E are offset from each other in the X direction. In addition, according to the present embodiment, the position of the center P4 of the via electrode portion 20D and the position of the center P5 of the via electrode portion 20E are also offset from each other in the Y direction. Therefore, according to the present embodiment, the distance between the via electrode portions 20D and 20E can be increased without increasing the distance between the via electrode portions 20D and 20E in the X direction.

[0040] Thus, according to this embodiment, the coupling degree between adjacent resonators 11A to 11E can be reduced without increasing the distance between adjacent resonators 11A to 11E in the X direction. Therefore, according to this embodiment, the filter 10 having good characteristics can be obtained while maintaining the size of the filter 10 small.

[0041] The positions of the center P1 of the via electrode portion 20A and the center P4 of the via electrode portion 20D in the Y direction are located on the side surface 14e relative to the position of the center C of the dielectric substrate 14 in the Y direction. The positions of the center P2 of the via electrode portion 20B and the center P5 of the via electrode portion 20E in the Y direction are located on the side surface 14f relative to the position of the center C of the dielectric substrate 14 in the Y direction. The positions of the centers of the input / output terminal 22A and the input / output terminal 22B in the Y direction are set to be the same as the position of the center C of the dielectric substrate 14 in the Y direction.

[0042] The via electrode portion 20 closest to the input-output terminal 22A among the five via electrode portions 20A to 20E is the via electrode portion 20A. The distance in the X direction between the position of the center P1 of the via electrode portion 20A and the position of the input-output terminal 22A is smaller than the distance in the X direction between the position of the center P2 of the via electrode portion 20B and the position of the input-output terminal 22A. The distance in the Y direction between the position of the center P1 of the via electrode portion 20A and the position of the input-output terminal 22A is the same as the distance in the Y direction between the position of the center P2 of the via electrode portion 20B and the position of the input-output terminal 22A.

[0043] The via electrode portion 20 closest to the input-output terminal 22B among the five via electrode portions 20A to 20E is the via electrode portion 20E. The distance in the X direction between the position of the center P5 of the via electrode portion 20E and the position of the input-output terminal 22B is smaller than the distance in the X direction between the position of the center P4 of the via electrode portion 20D and the position of the input-output terminal 22B. The distance in the Y direction between the position of the center P5 of the via electrode portion 20E and the position of the input-output terminal 22B is the same as the distance in the Y direction between the position of the center P4 of the via electrode portion 20D and the position of the input-output terminal 22B.

[0044] The resonators 11A to 11E are arranged at positions that are point-symmetrical with respect to the center C of the dielectric substrate 14 when viewed from above. That is, the resonators 11A and the resonator 11E are arranged at positions that are point-symmetrical with respect to the center C of the dielectric substrate 14 when viewed from above. In addition, the resonators 11B and the resonator 11D are also arranged at positions that are point-symmetrical with respect to the center C of the dielectric substrate 14 when viewed from above. The resonator 11C is located at the center C of the dielectric substrate 14 when viewed from above. In the present embodiment, the resonators 11A to 11E are formed point-symmetrically in order to obtain good frequency characteristics.

[0045] like Figure 2As shown, the plurality of via electrodes 24 constituting the via electrode portion 20A, 20B, 20D, and 20E are arranged along an imaginary circle 26, which is an imaginary circle, when viewed from above. The via electrode portion 20 is formed by arranging the plurality of via electrodes 24 along the imaginary circle 26, so that the via electrode portion 20 can operate like a via electrode of a large diameter corresponding to the imaginary circle 26. The via electrode portion 20 is composed of a plurality of via electrodes 24 having relatively small diameters, so that the manufacturing process can be simplified. In addition, the via electrode portion 20 is composed of a plurality of via electrodes 24 having relatively small diameters, so that the deviation of the diameter of the via electrode portion 20 can be reduced. In addition, the via electrode portion 20 is composed of a plurality of via electrodes 24 having relatively small diameters, so that less materials such as silver need to be buried in the via, and cost reduction can be achieved.

[0046] The via electrode portion 20C is divided into a partial electrode portion 20Ca and a partial electrode portion 20Cb. The partial electrode portion 20Ca is composed of a plurality of via electrodes 24. The partial electrode portion 20Cb is also composed of a plurality of via electrodes 24. The partial electrode portion 20Ca and the partial electrode portion 20Cb are separated from each other in the Y direction. In addition, the plurality of via electrodes 24 constituting the partial electrode portion 20Ca are arranged along an imaginary arc 27A (see FIG. 27A ) constituting a portion of the imaginary circle 26 when viewed from above. Fig.13 The plurality of via electrodes 24 constituting the partial electrode portion 20Cb are arranged along an imaginary arc 27B constituting a portion of the imaginary circle 26 in a plan view (see Fig.13 )arrangement.

[0047] Thus, according to the present embodiment, the via electrode portion 20C of the resonator 11C is divided into the partial electrode portion 20Ca and the partial electrode portion 20Cb, and the partial electrode portion 20Ca and the partial electrode portion 20Cb are separated from each other in the Y direction. Therefore, according to the present embodiment, the distance between the partial electrode portion 20Ca and the shield conductor 12Ca is shortened, and the distance between the partial electrode portion 20Cb and the shield conductor 12Cb is shortened. If the distance between the partial electrode portion 20Ca and the shield conductor 12Ca is shortened, the coupling capacitance between the partial electrode portion 20Ca and the shield conductor 12Ca increases. If the distance between the partial electrode portion 20Cb and the shield conductor 12Cb is shortened, the coupling capacitance between the partial electrode portion 20Cb and the shield conductor 12Cb increases. Therefore, even when the length of the via electrode portion 20C is shortened as the filter 10 is made low-profile, the degradation of the characteristics can be suppressed.

[0048] like Figure 6As shown, coupling capacitor electrodes (plate electrodes) 98A and 98B are formed in the dielectric substrate 14. The coupling capacitor electrode 98A and the coupling capacitor electrode 98B are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. In this embodiment, the coupling capacitor electrode 98 is formed point-symmetrically to obtain good frequency characteristics. In the following, when describing without distinguishing each of the coupling capacitor electrodes 98A and 98B, the symbol 98 is used.

[0049] The coupling capacitor electrode 98 and the capacitor electrodes 18B and 18D are formed on the same layer. In other words, the coupling capacitor electrodes 98A and 98B and the capacitor electrodes 18B and 18D are formed on the same ceramic sheet (not shown). The layer on which the coupling capacitor electrode 98 is formed is located between the layer on which the capacitor electrode 19 is formed and the layer on which the shielding conductor 12A is formed. The coupling capacitor electrode 98 is opposite to the shielding conductor 12A. For example, the coupling capacitor electrode 98 is formed in the same manufacturing process as the capacitor electrode 18 using a printing method. The coupling capacitor electrode 98 is not connected to any of the multiple resonators 11.

[0050] like Figure 6 As shown, the coupling capacitor electrode 98A includes a first portion 98A1 and a second portion 98A2. A portion of the first portion 98A1 is aligned with a partial pattern 19A1 (see FIG. 1 ) provided in the capacitor electrode 19A. Figure 7 ) is opposite to a portion of the first portion 98A1. A portion of the first portion 98A1 and a portion of the partial pattern 19A1 overlap each other when viewed from above. One end of the second portion 98A2 is connected to the first portion 98A1. The second portion 98A2 protrudes in the +X direction. A portion of the second portion 98A2 overlaps with the partial pattern 19C1 (see Figure 7 ) are opposite. A portion of the second portion 98A2 and a portion of the partial pattern 19C1 overlap each other when viewed from above. Figure 5 As shown, the capacitor electrode 19A, the coupling capacitor electrode 98A, and the capacitor electrode 19C constitute a capacitive coupling structure 99A1.

[0051] like Figure 6 As shown, the coupling capacitor electrode 98B includes a first portion 98B1 and a second portion 98B2. A portion of the first portion 98B1 is aligned with a partial pattern 19E1 (see FIG. 1 ) provided in the capacitor electrode 19E. Figure 7 ) is opposite to a portion of the first portion 98B1. A portion of the first portion 98B1 and a portion of the partial pattern 19E1 overlap each other when viewed from above. One end of the second portion 98B2 is connected to the first portion 98B1. The second portion 98B2 protrudes in the -X direction. A portion of the second portion 98B2 overlaps with the partial pattern 19E2 (see Figure 7 ) is relative to a part of it. Figure 5As shown, the capacitor electrode 19E, the coupling capacitor electrode 98B, and the capacitor electrode 19C constitute a capacitive coupling structure 99B1.

[0052] The capacitor electrode 18 is formed by a printing method. Therefore, when forming the capacitor electrode 18, a relatively large dimensional error may occur. The dimensional error that may occur when forming the capacitor electrode 18 may become a major cause of the deterioration of the filter characteristics. Therefore, in this embodiment, the coupling capacitor electrode 98 is formed on the same layer as the layer forming the capacitor electrode 18, and the coupling capacitor electrode 98 is located between the capacitor electrode 19 and the shield conductor 12A, thereby suppressing the deterioration of the filter characteristics.

[0053] The coupling capacitor electrode 98 and the capacitor electrode 18 are formed together by printing, so when a size error occurs in the capacitor electrode 18, the same size error also occurs in the coupling capacitor electrode 98. For example, when the size of the capacitor electrode 18 in the X direction increases by 0.03 mm relative to the regular size, the size of the coupling capacitor electrode 98 in the X direction also increases by 0.03 mm relative to the regular size. That is, in the present embodiment, when the size of the capacitor electrode 18 increases, the size of the coupling capacitor electrode 98 located between the capacitor electrode 19 and the shield conductor 12A also increases. Therefore, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases due to the increase in the size of the capacitor electrode 18, the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 also increases due to the increase in the size of the coupling capacitor electrode 98. That is, in the present embodiment, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, not only the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, but also the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 increases. Therefore, according to the present embodiment, even when a dimensional error or the like occurs when forming the capacitor electrode 18 , it is possible to suppress the filter characteristics from being deteriorated.

[0054] Fig.16 2 is a graph illustrating the frequency characteristics of a filter according to a comparative example. The filter according to the comparative example does not include the coupling capacitor electrode 98 . Fig.16 The horizontal axis shows frequency. Fig.16 The vertical axis shows the attenuation. Fig.16 In FIG. 1 , the filter characteristics when there is no error in the size of the capacitor electrode 18 are shown by a dotted line. Fig.16 In FIG. 1 , the filter characteristics when the size of the capacitor electrode 18 is increased by 5 μm relative to the design value are shown by a solid line. Fig.16 As shown, in the comparative example, if a dimensional error occurs when forming the capacitor electrode 18, the filter characteristics are greatly deteriorated.

[0055] Fig.17 : is a graph illustrating the frequency characteristics of the filter according to this embodiment. Fig.17 The horizontal axis shows frequency. Fig.17 The vertical axis shows the attenuation. Fig.17 In FIG. 1 , the filter characteristics when there is no error in the size of the capacitor electrode 18 are shown by a dotted line. Fig.17 In FIG. 1 , the filter characteristics when the size of the capacitor electrode 18 is increased by 5 μm relative to the design value are shown by a solid line. Fig.17 As shown, in this embodiment, even when a dimensional error occurs when forming the capacitor electrode 18, it is possible to suppress the filter characteristics from being deteriorated.

[0056] like Figure 8 and Fig. 9 As shown, coupling capacitor electrodes (plate electrodes) 72A to 72C are formed in the dielectric substrate 14. The coupling capacitor electrodes 72A to 72C are formed on the same layer. In other words, the coupling capacitor electrodes 72A to 72C are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 72A to 72C are formed is located above the layer on which the capacitor electrode 19 is formed. Between the coupling capacitor electrodes 72A to 72C and the capacitor electrode 19, there are one or more ceramic sheets not shown. The coupling capacitor electrode 72A is connected to the via electrode portion 20B of the resonator 11B. The coupling capacitor electrode 72B is connected to the via electrode portion 20D of the resonator 11D. The coupling capacitor electrode 72C is connected to the via electrode portion 20C of the resonator 11C. When describing without distinguishing the individual coupling capacitor electrodes, the symbol 72 is used, and when describing by distinguishing the individual coupling capacitor electrodes, the symbols 72A to 72C are used.

[0057] The coupling capacitor electrode 72 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The coupling capacitor electrode 72A and the coupling capacitor electrode 72B are formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The coupling capacitor electrode 72C is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In this embodiment, the coupling capacitor electrode 72 is formed point-symmetrically to obtain good frequency characteristics.

[0058] The coupling capacitor electrode 72A includes partial patterns (electrode patterns) 72A1 to 72A3. The partial pattern 72A1 is connected to the via electrode portion 20B. One end of the partial pattern 72A2 is connected to the partial pattern 72A1. The partial pattern 72A2 protrudes in the +X direction. A portion of the partial pattern 72A2 is aligned with the partial pattern 19C2 (see FIG. 19C3 ) in a plan view. Figure 7). One end of the partial pattern 72A3 is connected to the partial pattern 72A1. The partial pattern 72A3 protrudes in the -X direction. A portion of the partial pattern 72A3 overlaps with a portion of the partial pattern 19A3 in a plan view.

[0059] The coupling capacitor electrode 72B includes partial patterns (electrode patterns) 72B1 to 72B3. The partial pattern 72B1 is connected to the via electrode portion 20D. One end of the partial pattern 72B2 is connected to the partial pattern 72B1. The partial pattern 72B2 protrudes in the -X direction. A portion of the partial pattern 72B2 overlaps with a portion of the partial pattern 19C3 when viewed from above. One end of the partial pattern 72B3 is connected to the partial pattern 72B1. The partial pattern 72B3 protrudes in the +X direction. A portion of the partial pattern 72B3 overlaps with a portion of the partial pattern 19E3 when viewed from above.

[0060] The coupling capacitor electrode 72C includes partial patterns (electrode patterns) 72C1 to 72C4. The partial pattern 72C1 is connected to the partial electrode portion 20Ca. The partial pattern 72C4 is connected to the partial electrode portion 20Cb. That is, the partial pattern 72C1 and the partial pattern 72C4 are connected to the via electrode portion 20C. The partial pattern 72C1 and the partial pattern 72C4 are separated from each other in the Y direction. One end of the partial pattern 72C2 is connected to the partial pattern 72C1. The partial pattern 72C2 protrudes in the -Y direction. A portion of the partial pattern 72C2 overlaps with a portion of the partial pattern 19A2 when viewed from above. One end of the partial pattern 72C3 is connected to the partial pattern 72C4. The partial pattern 72C3 protrudes in the +Y direction. A portion of the partial pattern 72C3 overlaps with a portion of the partial pattern 19E2 when viewed from above.

[0061] As described above, a portion of the partial pattern 19A3 is opposite to a portion of the partial pattern 18B2. In other words, the capacitor electrode 19A is provided with a partial pattern 19A3 that is opposite to a portion of the capacitor electrode 18B formed on the same layer as the coupling capacitor electrode 98. In this way, a capacitive coupling structure 71AB including the partial pattern 19A3 and the partial pattern 18B2 is formed (see Figure 8 ).

[0062] As described above, a portion of the partial pattern 19E3 is opposite to a portion of the partial pattern 18D2. In other words, the capacitor electrode 19E is provided with a partial pattern 19E3 that is opposite to a portion of the capacitor electrode 18D formed on the same layer as the coupling capacitor electrode 98. In this way, a capacitive coupling structure 71DE including the partial pattern 19E3 and the partial pattern 18D2 is formed (see Figure 8 ).

[0063] As described above, a portion of the partial pattern 18B3, a portion of the partial pattern 19C2, and a portion of the partial pattern 72A2 overlap each other. In this way, a capacitive coupling structure 71BC including the partial pattern 18B3, the partial pattern 19C2, and the partial pattern 72A2 is formed (see Figure 8 ).

[0064] As described above, a portion of the partial pattern 18D3, a portion of the partial pattern 19C3, and a portion of the partial pattern 72B2 overlap each other. In this way, a capacitive coupling structure 71CD including the partial pattern 18D3, the partial pattern 19C3, and the partial pattern 72B2 is formed (see Figure 8 ).

[0065] As described above, a portion of the partial pattern 19A2 and a portion of the partial pattern 72C2 overlap each other. In this way, a capacitive coupling structure 71AC including the partial pattern 19A2 and the partial pattern 72C2 is formed (see Figure 8 ).

[0066] As described above, a portion of the partial pattern 19E2 and a portion of the partial pattern 72C3 overlap each other. In this way, a capacitive coupling structure 71CE including the partial pattern 19E2 and the partial pattern 72C3 is formed (see Figure 8 ). When describing the capacitive coupling structures without distinguishing them from each other, reference numeral 71 is used, and when describing the capacitive coupling structures while distinguishing them from each other, reference numerals 71AB, 71BC, 71CD, 71DE, 71AC, and 71CE are used.

[0067] In the present embodiment, the partial patterns 18B2, 18B3, 18D2, 18D3, 19A2, and 19E2 constituting a part of the capacitor electrodes 18 and 19 constitute a part of the capacitive coupling structure 71 for the following reasons. That is, if the filter 10 is only made low-profile, a good Q value cannot be obtained. That is, if the filter 10 is only made low-profile while the distance in the Z direction between the capacitor electrodes 18 and 19 and the capacitive coupling structure 71 is set to be relatively large, a good Q value cannot be obtained. In contrast, if the distance in the Z direction between the capacitor electrodes 18 and 19 and the capacitive coupling structure 71 is relatively small, a good Q value can be obtained. According to the present embodiment, the partial patterns 18B2, 18B3, 18D2, 18D3, 19A2, and 19E2 constituting a part of the capacitor electrode 18 constitute a part of the capacitive coupling structure 71. That is, in the present embodiment, the distance in the Z direction between the capacitor electrodes 18 and 19 and the capacitive coupling structure 71 is set to zero.

[0068] like Fig.10 and Fig.11As shown, coupling capacitor electrodes (plate electrodes) 74A to 74E are formed in the dielectric substrate 14. The coupling capacitor electrodes 74A to 74E are formed on the same layer. In other words, the coupling capacitor electrodes 74A to 74E are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 74A to 74E are formed is located above the layer on which the coupling capacitor electrodes 72A to 72C are formed. Between the coupling capacitor electrodes 74A to 74E and the coupling capacitor electrode 72, there are more than one ceramic sheet not shown. The coupling capacitor electrode 74A is connected to the via electrode portion 20A of the resonator 11A. The coupling capacitor electrode 74B is connected to the via electrode portion 20E of the resonator 11E. The coupling capacitor electrode 74C is connected to the via electrode portion 20B of the resonator 11B. The coupling capacitor electrode 74D is connected to the via electrode portion 20D of the resonator 11D. The coupling capacitor electrode 74E is connected to the via electrode portion 20C included in the resonator 11C. In the following description, the reference numeral 74 is used when the coupling capacitor electrodes 74A to 74E are not distinguished from each other.

[0069] The coupling capacitor electrode 74 is formed point-symmetrically with the center C of the dielectric substrate 14 when viewed from above as the symmetry center. The coupling capacitor electrode 74A and the coupling capacitor electrode 74B are formed point-symmetrically with the center C of the dielectric substrate 14 when viewed from above as the symmetry center. The coupling capacitor electrode 74C and the coupling capacitor electrode 74D are formed point-symmetrically with the center C of the dielectric substrate 14 when viewed from above as the symmetry center. The coupling capacitor electrode 74E is formed point-symmetrically with the center C of the dielectric substrate 14 when viewed from above as the symmetry center. In the present embodiment, the coupling capacitor electrode 74 is formed point-symmetrically to obtain good frequency characteristics.

[0070] like Fig.12 and Fig.13As shown, a coupling pattern 78 is formed in the dielectric substrate 14. The layer on which the coupling pattern 78 is formed is located above the layer on which the coupling capacitor electrodes 74A to 74E are formed. Between the coupling capacitor electrode 74 and the coupling pattern 78, there are one or more ceramic sheets not shown. The coupling pattern 78 includes partial patterns 781 to 783. The partial patterns 781 to 783 are formed on the same layer. In other words, the partial patterns 781 to 783 are formed on the same ceramic sheet not shown. The partial pattern 781 is located between the partial pattern 782 and the partial pattern 783 in the X direction. A portion of the partial pattern 781 is located between the partial electrode portion 20Ca and the partial electrode portion 20Cb. The partial pattern 782 is connected to the via electrode portion 20A provided in the resonator 11A. The partial pattern 782 is formed at a position in the -X direction relative to the partial pattern 781. The partial pattern 781 and the partial pattern 782 are separated from each other in the X direction. The partial pattern 783 is connected to the via electrode portion 20E included in the resonator 11E. The partial pattern 783 is formed at a position in the +X direction relative to the partial pattern 781. The partial pattern 781 and the partial pattern 783 are separated from each other in the X direction.

[0071] The partial pattern 781 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the center. The partial pattern 782 and the partial pattern 783 are formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the center. That is, the coupling pattern 78 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In the present embodiment, the coupling pattern 78 is formed point-symmetrically in order to obtain good frequency characteristics.

[0072] like Fig.14 and Fig.15 As shown, a coupling pattern 76 is formed in the dielectric substrate 14. The layer on which the coupling pattern 76 is formed is located above the layer on which the coupling pattern 78 is formed. Between the coupling pattern 78 and the coupling pattern 76, there are one or more ceramic sheets not shown. The coupling pattern 76 is connected to the via electrode portion 20B of the resonator 11B and the via electrode portion 20D of the resonator 11D. In the coupling pattern 76, openings 76a and 76b are formed. The partial electrode portion 20Ca of the resonator 11C passes through the opening 76a. The partial electrode portion 20Cb of the resonator 11C passes through the opening 76b. In addition, the number of openings formed in the coupling pattern 76 is not limited to 2. One opening may be formed in the coupling pattern 76, and the partial electrode portion 20Ca and the partial electrode portion 20Cb may pass through the opening.

[0073] The coupling pattern 76 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. In the present embodiment, the coupling pattern 76 is formed point-symmetrically in order to obtain good frequency characteristics.

[0074] like Figure 2 As shown, input-output patterns 80A and 80B are also formed in the dielectric substrate 14. The input-output patterns 80A and 80B are formed on the same layer. In other words, the input-output patterns 80A and 80B are formed on the same ceramic sheet (not shown). The layer on which the input-output patterns 80A and 80B are formed is located above the layer on which the coupling pattern 76 is formed. Between the coupling pattern 78 and the input-output patterns 80A and 80B, there are one or more ceramic sheets (not shown). In the following, when explaining without distinguishing each of the input-output patterns 80A and 80B, the symbol 80 is used.

[0075] The input-output pattern 80A includes partial patterns 80A1 and 80A2. One end of the partial pattern 80A1 is connected to the input-output terminal 22A. The other end of the partial pattern 80A1 is connected to the partial pattern 80A2. The partial pattern 80A2 is connected to the via electrode portion 20A. In this way, the input-output terminal 22A is connected to the via electrode portion 20A via the input-output pattern 80A.

[0076] The input-output pattern 80B includes partial patterns 80B1 and 80B2. One end of the partial pattern 80B1 is connected to the input-output terminal 22B. The other end of the partial pattern 80B1 is connected to the partial pattern 80B2. The partial pattern 80B2 is connected to the via electrode portion 20E. In this way, the input-output terminal 22B is connected to the via electrode portion 20E via the input-output pattern 80B.

[0077] In this way, the input / output terminal 22A is connected to the via electrode portion 20A via the input / output pattern 80A, and the input / output terminal 22B is connected to the via electrode portion 20E via the input / output pattern 80B. In this embodiment, the external Q can be appropriately adjusted by appropriately setting the positions of the input / output patterns 80A and 80B in the Z direction. That is, in this embodiment, the external Q can be appropriately adjusted by appropriately setting the positions of the input / output patterns 80A and 80B in the length direction of the via electrode portions 20A and 20D.

[0078] like Figure 7 As shown, shielding via electrode portions 81A to 81D are formed in the dielectric substrate 14. When describing the shielding via electrode portions without distinguishing them from each other, reference numeral 81 is used, and when describing the shielding via electrode portions distinguishing them from each other, reference numerals 81A, 81B, 81C, and 81D are used.

[0079] The shielding via electrode section 81A includes a shielding via electrode 82A. The shielding via electrode section 81B includes a shielding via electrode 82B. The shielding via electrode section 81C includes a shielding via electrode 82C. The shielding via electrode section 81D includes a shielding via electrode 82D. When describing without distinguishing the shielding via electrodes, the symbol 82 is used. When describing by distinguishing the shielding via electrodes, the symbols 82A to 82D are used. Figure 1 In the illustrated example, one shield via electrode portion 81 includes one shield via electrode 82. However, one shield via electrode portion 81 may include a plurality of shield via electrodes 82. In addition, at least one of the plurality of shield via electrode portions 81 may be omitted as needed.

[0080] One end of the shield via electrode portion 81 is connected to the shield conductor 12A. The other end of the shield via electrode portion 81 is connected to the shield conductor 12B.

[0081] like Fig.11 As shown, the shielding via electrode portion 81A is connected to the shielding conductors 12A and 12B in the extension region 84A extending the region where the via electrode portion 20A is located along the -Y direction. That is, the shielding via electrode portion 81A is connected to the shielding conductors 12A and 12B in the extension region 84A extending the region where the via electrode portion 20A is located toward the shielding conductor 12Ca. In this way, the shielding via electrode portion 81A is selectively formed in the extension region 84A. The shielding via electrode portion 81A is located near the shielding conductor 12Ca. In addition, the region where the via electrode portion 20 is located is the region corresponding to the imaginary circle 26. In addition, the shielding via electrode portion 81A is connected to the electrode pattern 19a.

[0082] The shielding via electrode portion 81B is connected to the shielding conductors 12B and 12B in the extension region 84B extending the region where the via electrode portion 20E is located in the +Y direction. That is, the shielding via electrode portion 81B is connected to the shielding conductors 12B and 12B in the extension region 84B extending the region where the via electrode portion 20E is located toward the shielding conductor 12Cb. In this way, the shielding via electrode portion 81B is selectively formed in the extension region 84B. The shielding via electrode portion 81B is located near the shielding conductor 12Cb. In addition, the shielding via electrode portion 81B is connected to the electrode pattern 19b.

[0083] The shielding via electrode portion 81C is connected to the shielding conductors 12B and 12B in the extension region 84C extending the region where the via electrode portion 20B is located in the +Y direction. That is, the shielding via electrode portion 81C is connected to the shielding conductors 12B and 12B in the extension region 84C extending the region where the via electrode portion 20B is located toward the shielding conductor 12Cb. In this way, the shielding via electrode portion 81C is selectively formed in the extension region 84C. The shielding via electrode portion 81C is located near the shielding conductor 12Cb. In addition, the shielding via electrode portion 81C is connected to the electrode pattern 19c.

[0084] The shielding via electrode portion 81D is connected to the shielding conductors 12A and 12B in the extension region 84D extending the region where the via electrode portion 20D is located in the -Y direction. That is, the shielding via electrode portion 81D is connected to the shielding conductors 12A and 12B in the extension region 84D extending the region where the via electrode portion 20D is located toward the shielding conductor 12Ca. In this way, the shielding via electrode portion 81D is selectively formed in the extension region 84D. The shielding via electrode portion 81D is located near the shielding conductor 12Ca. In addition, the shielding via electrode portion 81D is connected to the electrode pattern 19d.

[0085] In the following description, when the description is made without distinguishing each of the above-mentioned extension regions, the symbol 84 is used, and when the description is made distinguishing each of the extension regions, the symbols 84A to 84D are used. In the present embodiment, the shielding via electrode portion 81 is formed for the following reasons. That is, if a positional shift occurs when the dielectric substrate 14 is cut, the distance between the via electrode portion 20 and the side surfaces 14e and 14f changes. If the distance between the via electrode portion 20 and the side surfaces 14e and 14f changes, the distance between the via electrode portion 20 and the shielding conductors 12Ca and 12Cb changes. The change in the distance between the via electrode portion 20 and the shielding conductors 12Ca and 12Cb causes a change in the filter characteristics and the like. On the other hand, the shielding via electrode portion 81 is not formed on the side surfaces 14e and 14f, and is therefore not affected by the positional shift when the dielectric substrate 14 is cut. That is, even if a positional shift occurs when the dielectric substrate 14 is cut, the distance between the shielding via electrode portion 81 and the via electrode portion 20 does not change. For such reasons, in the present embodiment, the shield via electrode portion 81 is formed.

[0086] In the present embodiment, the shielding via electrode portion 81 is selectively formed in the extension region 84 for the following reasons. That is, by irradiating a laser beam to the dielectric substrate 14 to form a through hole, and burying a conductor in the through hole, the shielding via electrode portion 81 can be formed. That is, a certain degree of man-hours are required to form the shielding via electrode portion 81. Therefore, in the case where many shielding via electrode portions 81 are arranged only along the side surfaces 14e and 14f, good productivity cannot be obtained. On the other hand, even if the shielding via electrode portion 81 is configured only in the extension region 84, deviations in filter characteristics and the like caused by positional displacement when the dielectric substrate 14 is cut can be suppressed. For such reasons, in the present embodiment, the shielding via electrode portion 81 is selectively formed in the extension region 84.

[0087] Thus, according to the present embodiment, the coupling capacitor electrode 98 printed together with the capacitor electrode 18 is provided between the capacitor electrode 19 and the shield conductor 12A, and therefore, when the size of the capacitor electrode 18 increases, the size of the coupling capacitor electrode 98 located between the capacitor electrode 19 and the shield conductor 12A also increases. Therefore, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases due to the increase in the size of the capacitor electrode 18, the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 also increases due to the increase in the size of the coupling capacitor electrode 98. That is, in the present embodiment, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, not only the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, but also the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 increases. Therefore, according to the present embodiment, even when a dimensional error or the like occurs when the capacitor electrode 18 is formed, it is possible to suppress the filter characteristics from being deteriorated.

[0088] [Second embodiment] use Figures 18 to 33 A filter according to the second embodiment will be described. Fig.18 It is a perspective view showing a filter according to the second embodiment. Fig.19 It is a top view showing a filter according to the second embodiment. Fig. 20A and Fig. 20B This is a cross-sectional view showing a part of the filter according to the second embodiment. Fig.21 and Fig. 22 It is a perspective view showing a filter according to the second embodiment. Fig.23 and Fig.24 It is a top view showing a filter according to the second embodiment. Fig.25 It is a perspective view showing a filter according to the second embodiment. Fig.26It is a top view showing a filter according to the second embodiment. Fig. 27 It is a perspective view showing a filter according to the second embodiment. Fig.28 It is a top view showing a filter according to the second embodiment. Fig.29 It is a perspective view showing a filter according to the second embodiment. Fig.30 It is a top view showing a filter according to the second embodiment. Fig.31 It is a perspective view showing a filter according to the second embodiment. Fig.32 and Fig.33 FIG. 2 is a top view showing a filter using the second embodiment. Figures 18 to 33 In the example, some components are omitted appropriately. Figures 1 to 15 The same components as those of the filter according to the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified.

[0089] like Fig.18 and Fig.19 As shown in FIG. 1 , capacitor electrodes (strip lines) 18A, 18B, 18D, and 18E are formed in the dielectric substrate 14 to face the shield conductor 12A. The capacitor electrodes 18A, 18B, 18D, and 18E are formed on the same layer. In other words, the capacitor electrodes 18A, 18B, 18D, and 18E are formed on the same ceramic sheet (not shown). In the following description, the reference numeral 18 is used when the capacitor electrodes 18A, 18B, 18D, and 18E are not distinguished from each other.

[0090] like Fig.23 As shown, the capacitor electrode 18 is point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The capacitor electrode 18A and the capacitor electrode 18E are point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The capacitor electrode 18B and the capacitor electrode 18D are point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In this embodiment, the capacitor electrodes 18 are point-symmetrically formed in order to obtain good frequency characteristics.

[0091] The capacitor electrode 18A is connected to the via electrode portion 20A. The capacitor electrode 18B includes partial patterns (electrode patterns) 18B1 to 18B3. The partial pattern 18B1 is connected to the via electrode portion 20B. The partial pattern 18B2 protrudes in the -X direction. The partial pattern 18B3 protrudes in the +X direction. The capacitor electrode 18D includes partial patterns (electrode patterns) 18D1 to 18D3. The partial pattern 18D1 is connected to the via electrode portion 20D. The partial pattern 18D2 protrudes in the +X direction. The partial pattern 18D3 protrudes in the -X direction. The capacitor electrode 18E is connected to the via electrode portion 20E.

[0092] Electrode patterns 18a and 18d connected to the shield conductor 12Ca and electrode patterns 18b and 18c connected to the shield conductor 12Cb are also formed in the dielectric substrate 14. The electrode pattern 18a is located in the -Y direction relative to the capacitor electrode 18A. The electrode pattern 18b is located in the +Y direction relative to the capacitor electrode 18E. The electrode pattern 18c is located in the +Y direction relative to the capacitor electrode 18B. The electrode pattern 18d is located in the -Y direction relative to the capacitor electrode 18D.

[0093] The plurality of via electrodes 24 constituting the via electrode portions 20A, 20B, 20D, and 20E are arranged along a virtual circle 26 which is a virtual circle in a plan view, similarly to the first embodiment.

[0094] like Fig. 22 and Fig.24 As shown, coupling capacitor electrodes (plate electrodes) 86A to 86D are formed in the dielectric substrate 14. The coupling capacitor electrodes 86A to 86D are formed on the same layer. In other words, the coupling capacitor electrodes 86A to 86D are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 86A to 86D are formed is located above the layer on which the capacitor electrode 18 is formed. Between the coupling capacitor electrode 86 and the capacitor electrode 18, there are one or more ceramic sheets not shown. The coupling capacitor electrode 86A is connected to the via electrode portion 20A of the resonator 11A. In other words, the coupling capacitor electrode 86A is connected to the via electrode portion 20A connected to the capacitor electrode 18A. The coupling capacitor electrode 86B is connected to the via electrode portion 20E of the resonator 11E. In other words, the coupling capacitor electrode 86B is connected to the via electrode portion 20E connected to the capacitor electrode 18E. The coupling capacitor electrode 86C is connected to the via electrode portion 20B of the resonator 11B. The coupling capacitor electrode 86D is connected to the via electrode portion 20D provided in the resonator 11D. In the following description, the reference numeral 86 is used when the coupling capacitor electrodes 86A to 86D are not distinguished from each other.

[0095] like Fig.24 As shown, the coupling capacitor electrode 86 is formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 86A and the coupling capacitor electrode 86B are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 86C and the coupling capacitor electrode 86D are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. In this embodiment, the coupling capacitor electrode 86 is formed point-symmetrically to obtain good frequency characteristics.

[0096] The coupling capacitor electrode 86A includes partial patterns (electrode patterns) 86A1 to 86A3. The partial pattern 86A1 is connected to the via electrode portion 20A. One end of the partial pattern 86A2 is connected to the partial pattern 86A1. The partial pattern 86A2 protrudes in the +X direction. One end of the partial pattern 86A3 is connected to the partial pattern 86A1. The partial pattern 86A3 protrudes in the +Y direction. A portion of the partial pattern 86A3 is connected to the partial pattern 18B2 (see Fig.23 ) relative to a part of .

[0097] The coupling capacitor electrode 86B includes partial patterns (electrode patterns) 86B1 to 86B3. The partial pattern 86B1 is connected to the via electrode portion 20E. One end of the partial pattern 86B2 is connected to the partial pattern 86B1. The partial pattern 86B2 protrudes in the -X direction. One end of the partial pattern 86B3 is connected to the partial pattern 86B1. The partial pattern 86B3 protrudes in the -Y direction. A portion of the partial pattern 86B3 is connected to the partial pattern 18D2 (see Fig.23 ) relative to a part of .

[0098] like Fig.24 As shown, a capacitor electrode (strip line) 19C is formed in the dielectric substrate 14. The capacitor electrode 19C is formed on the same layer as the coupling capacitor electrode 86. In other words, the capacitor electrode 19C and the coupling capacitor electrode 86 are formed on the same ceramic sheet not shown. The layer on which the capacitor electrode 19C is formed is located above the layer on which the capacitor electrode 18 is formed. The capacitor electrode 19C is formed point-symmetrically with the center C of the dielectric substrate 14 when viewed from above as the center of symmetry. In this embodiment, the capacitor electrode 19C is formed point-symmetrically in order to obtain good frequency characteristics.

[0099] The capacitor electrode 19C includes partial patterns (electrode patterns) 19C1 to 19C3. The partial pattern 19C1 is located at the center C of the dielectric substrate 14 in a plan view. The partial pattern 19C1 includes partial patterns 19C1a to 19C1c. The partial pattern 19C1a is formed at a position in the -Y direction relative to the partial pattern 19C1c. One end (lower end) of the partial electrode portion 20Ca is connected to the partial pattern 19C1a. The partial pattern 19C1b is formed at a position in the +Y direction relative to the partial pattern 19C1c. One end (lower end) of the partial electrode portion 20Cb is connected to the partial pattern 19C1b. As in the first embodiment, partial patterns 19C2 and 19C3 are connected to the partial pattern 19C1. The partial pattern 19C2 protrudes from the partial pattern 19C1b in the +Y direction. The partial pattern 19C3 protrudes from the partial pattern 19C1a in the -Y direction.

[0100] The plurality of via electrodes 24 constituting the partial electrode portion 20Ca are arranged along an imaginary arc 27A constituting a portion of the imaginary circle 26 in a plan view (see FIG. 27A ). Fig.32 , Fig.33 The plurality of via electrodes 24 constituting the partial electrode portion 20Cb are arranged along an imaginary arc 27B constituting a portion of the imaginary circle 26 in a plan view (see Fig.32 , Fig.33 ).

[0101] In the present embodiment, the partial electrode portion 20Ca and the partial electrode portion 20Cb are separated to a large extent in the Y direction. Therefore, in the present embodiment, the distance between the partial electrode portion 20Ca and the shield conductor 12Ca is sufficiently short, and the distance between the partial electrode portion 20Cb and the shield conductor 12Cb is sufficiently short. If the distance between the partial electrode portion 20Ca and the shield conductor 12Ca is sufficiently short, the coupling capacitance between the partial electrode portion 20Ca and the shield conductor 12Ca is sufficiently increased. If the distance between the partial electrode portion 20Cb and the shield conductor 12Cb is sufficiently short, the coupling capacitance between the partial electrode portion 20Cb and the shield conductor 12Cb is sufficiently increased. If this is done, for example, even when the length of the via electrode portion 20C is shortened due to low profile, good electrical characteristics can be obtained.

[0102] In the dielectric substrate 14 , electrode patterns 19 a and 19 d connected to the shield conductor 12Ca and electrode patterns 19 b and 19 c connected to the shield conductor 12Cb are also formed.

[0103] like Fig.23 As shown, coupling capacitor electrodes (plate electrodes) 98A and 98B are formed in the dielectric substrate 14. The coupling capacitor electrode 98A and the coupling capacitor electrode 98B are point-symmetrically formed with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In the following description, when the coupling capacitor electrodes 98A and 98B are described without distinguishing them, the symbol 98 is used, and when the coupling capacitor electrodes 98A and 98B are distinguished and described individually, the symbols 98A and 98B are used.

[0104] The coupling capacitor electrode 98 and the capacitor electrodes 18A, 18B, 18D, and 18E are formed on the same layer. In other words, the coupling capacitor electrodes 98A, 98B and the capacitor electrodes 18A, 18B, 18D, and 18E are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrode 98 is formed is located between the layer on which the coupling capacitor electrode 86 is formed and the layer on which the shielding conductor 12A is formed. That is, the layer on which the coupling capacitor electrode 98 is formed is located between the layer on which the capacitor electrode 19C is formed and the layer on which the shielding conductor 12A is formed. The coupling capacitor electrode 98 is opposite to the shielding conductor 12A. The coupling capacitor electrode 98 is not connected to any of the multiple resonators 11. The coupling capacitor electrode 98 is point-symmetrically formed with the center C of the dielectric substrate 14 when viewed from above as the center of symmetry.

[0105] The length direction of the coupling capacitor electrode 98A is the X direction. The coupling capacitor electrode 98A is located between the capacitor electrode 18A and the capacitor electrode 18B. A portion of the coupling capacitor electrode 98A is aligned with the partial pattern 86A1 (see Fig.24 ) are opposite to each other. A portion of the coupling capacitor electrode 98A and a portion of the partial pattern 86A1 overlap each other in a plan view. Another portion of the coupling capacitor electrode 98A overlaps with the partial pattern 19C1 (refer to Fig.24 ) is opposite to a portion of the coupling capacitor electrode 98A. Another portion of the coupling capacitor electrode 98A and a portion of the partial pattern 19C1 overlap each other when viewed from above. Fig. 22 As shown, the coupling capacitor electrode 98A, the coupling capacitor electrode 86A, and the capacitor electrode 19C constitute a capacitive coupling structure 99A2.

[0106] like Fig.23 As shown, the length direction of the coupling capacitor electrode 98B is the X direction. The coupling capacitor electrode 98B is located between the capacitor electrode 18D and the capacitor electrode 18E. A portion of the coupling capacitor electrode 98B is aligned with the portion of the pattern 86B1 (see Fig.24 ) are opposite to each other. A portion of the coupling capacitor electrode 98B and a portion of the partial pattern 86B1 overlap each other in a plan view. Another portion of the coupling capacitor electrode 98B overlaps with the partial pattern 19C1 (refer to Fig.24 ) is opposite to a portion of the coupling capacitor electrode 98B. Another portion of the coupling capacitor electrode 98B and a portion of the partial pattern 19C1 overlap each other when viewed from above. Fig. 22 As shown, the coupling capacitor electrode 98B, the coupling capacitor electrode 86B, and the capacitor electrode 19C constitute a capacitive coupling structure 99B2.

[0107] In the present embodiment, when the size of the capacitor electrode 18 increases, the size of the coupling capacitor electrode 98 also increases. Therefore, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases due to the increase in the size of the capacitor electrode 18, the coupling capacitance between the capacitor electrode 19C and the coupling capacitor electrode 98 and the coupling capacitance between the partial pattern 86A1 and the coupling capacitor electrode 98 also increase due to the increase in the size of the coupling capacitor electrode 98. That is, in the present embodiment, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, not only the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, but also the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 and the coupling capacitance between the coupling capacitor electrode 86 and the coupling capacitor electrode 98 increase. Therefore, in the present embodiment, even when a dimensional error or the like occurs when the capacitor electrode 18 is formed, it is possible to suppress the filter characteristics from being deteriorated.

[0108] like Fig.25 and Fig.26 As shown, coupling capacitor electrodes (plate electrodes) 88A to 88E are formed in the dielectric substrate 14. The coupling capacitor electrodes 88A to 88E are formed on the same layer. In other words, the coupling capacitor electrodes 88A to 88E are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 88A to 88E are formed is located above the layer on which the capacitor electrode 19C is formed. That is, the layer on which the coupling capacitor electrodes 88A to 88E are formed is located above the layer on which the coupling capacitor electrode 86 is formed. Between the coupling capacitor electrode 88 and the capacitor electrode 19C, there are one or more ceramic sheets not shown. That is, between the coupling capacitor electrode 88 and the coupling capacitor electrode 86, there are one or more ceramic sheets not shown. The coupling capacitor electrode 88A is connected to the via electrode portion 20A of the resonator 11A. The coupling capacitor electrode 88B is connected to the via electrode portion 20E of the resonator 11E. The coupling capacitor electrode 88C is connected to the via electrode portion 20B of the resonator 11B. The coupling capacitor electrode 88D is connected to the via electrode portion 20D included in the resonator 11D. The coupling capacitor electrode 88E is connected to the via electrode portion 20C included in the resonator 11C. In the following description, the reference numeral 88 is used when the coupling capacitor electrodes 88A to 88E are not distinguished from each other.

[0109] The coupling capacitor electrode 88 is formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 88A and the coupling capacitor electrode 88B are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 88C and the coupling capacitor electrode 88D are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 88E is formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. In the present embodiment, the coupling capacitor electrode 88 is formed point-symmetrically to obtain good frequency characteristics.

[0110] The coupling capacitor electrode 88C includes partial patterns (electrode patterns) 88C1 to 88C4. The partial pattern 88C1 is connected to the via electrode portion 20B. One end of the partial pattern 88C2 is connected to the partial pattern 88C1. The partial pattern 88C2 protrudes in the -X direction. One end of the partial pattern 88C3 is connected to the partial pattern 88C1. The partial pattern 88C3 protrudes in the +X direction. One end of the partial pattern 88C4 is connected to the partial pattern 88C1. The partial pattern 88C4 protrudes in the -X direction. The partial pattern 88C4 is formed at a position offset from the partial pattern 88C2 in the +Y direction. The partial pattern 88C4 and the partial pattern 88C2 are separated from each other in the Y direction.

[0111] The coupling capacitor electrode 88D includes partial patterns (electrode patterns) 88D1 to 88D4. The partial pattern 88D1 is connected to the via electrode portion 20D. One end of the partial pattern 88D2 is connected to the partial pattern 88D1. The partial pattern 88D2 protrudes in the +X direction. One end of the partial pattern 88D3 is connected to the partial pattern 88D1. The partial pattern 88D3 protrudes in the -X direction. One end of the partial pattern 88D4 is connected to the partial pattern 88D1. The partial pattern 88D4 protrudes in the +X direction. The partial pattern 88D4 is formed at a position offset from the partial pattern 88D2 in the -Y direction. The partial pattern 88D4 and the partial pattern 88D2 are separated from each other in the Y direction.

[0112] The coupling capacitor electrode 88E includes partial patterns (electrode patterns) 88E1 to 88E6. The partial pattern 88E1 is connected to the partial electrode portion 20Cb. At one end of the partial pattern 88E1, a partial pattern 88E2 is connected. The partial pattern 88E2 protrudes in the +X direction. At one end of the partial pattern 88E2, a partial pattern 88E3 is connected. The partial pattern 88E3 protrudes in the +Y direction. The partial pattern 88E4 is connected to the partial electrode portion 20Ca. At one end of the partial pattern 88E4, a partial pattern 88E5 is connected. The partial pattern 88E5 protrudes in the -X direction. At one end of the partial pattern 88E5, a partial pattern 88E6 is connected. The partial pattern 88E6 protrudes in the -Y direction.

[0113] like Fig. 27 and Fig.28 As shown, coupling capacitor electrodes (plate electrodes) 92A to 92E are formed in the dielectric substrate 14. The coupling capacitor electrodes 92A to 92E are formed on the same layer. In other words, the coupling capacitor electrodes 92A to 92E are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 92A to 92E are formed is located above the layer on which the coupling capacitor electrode 88 is formed. Between the coupling capacitor electrodes 92A to 92E and the coupling capacitor electrode 88, there are more than one ceramic sheet not shown. The coupling capacitor electrode 92A is connected to the via electrode portion 20A of the resonator 11A. The coupling capacitor electrode 92B is connected to the via electrode portion 20E of the resonator 11E. The coupling capacitor electrode 92C is connected to the via electrode portion 20B of the resonator 11B. The coupling capacitor electrode 92D is connected to the via electrode portion 20D of the resonator 11D. The coupling capacitor electrode 92E is connected to the via electrode portion 20C of the resonator 11C. In the following description, the reference numeral 92 is used when the coupling capacitor electrodes 92A to 92E are not distinguished from each other.

[0114] The coupling capacitor electrode 92 is formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 92A and the coupling capacitor electrode 92B are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 92C and the coupling capacitor electrode 92D are formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. The coupling capacitor electrode 92E is formed point-symmetrically with the center C of the dielectric substrate 14 in a top view as the symmetry center. In the present embodiment, the coupling capacitor electrode 92 is formed point-symmetrically in order to obtain good frequency characteristics.

[0115] like Fig.29 and Fig.30 As shown, coupling capacitor electrodes (plate electrodes) 94A to 94D are formed in the dielectric substrate 14. The coupling capacitor electrodes 94A to 94D are formed on the same layer. In other words, the coupling capacitor electrodes 94A to 94D are formed on the same ceramic sheet not shown. The layer on which the coupling capacitor electrodes 94A to 94D are formed is located above the layer on which the coupling capacitor electrode 92 is formed. Between the coupling capacitor electrodes 94A to 94D and the coupling capacitor electrode 92, there are one or more ceramic sheets not shown. The coupling capacitor electrode 94A is connected to the via electrode portion 20A of the resonator 11A. The coupling capacitor electrode 94B is connected to the via electrode portion 20E of the resonator 11E. The coupling capacitor electrodes 94C and 94D are not connected to the via electrode portion 20 of any of the resonators 11. In the following, when describing each of the coupling capacitor electrodes 94A to 94D without distinguishing them, the symbol 94 is used.

[0116] The coupling capacitor electrode 94 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The coupling capacitor electrode 94A and the coupling capacitor electrode 94B are formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. The coupling capacitor electrode 94C and the coupling capacitor electrode 94D are formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the symmetry center. In this embodiment, the coupling capacitor electrode 94 is formed point-symmetrically to obtain good frequency characteristics.

[0117] like Fig.32 As shown, in the dielectric substrate 14, input-output patterns 80A and 80B are formed in the same manner as in the first embodiment. The input-output patterns 80A and 80B are formed on the same layer. In other words, the input-output patterns 80A and 80B are formed on the same ceramic sheet (not shown). The layer on which the input-output patterns 80A and 80B are formed is located above the layer on which the coupling capacitor electrode 94 is formed. Between the input-output patterns 80A and 80B and the coupling capacitor electrode 94, there are one or more ceramic sheets (not shown). In the following, when describing without distinguishing each of the input-output patterns 80A and 80B, the symbol 80 is used.

[0118] like Fig.31 and Fig.33 As shown, a coupling pattern 96 is formed in the dielectric substrate 14. The layer on which the coupling pattern 96 is formed is located above the layer on which the input-output pattern 80 is formed. One or more ceramic sheets (not shown) are present between the coupling pattern 96 and the input-output pattern 80. The coupling pattern 96 is connected to the via-hole electrode portion 20B included in the resonator 11B and the via-hole electrode portion 20D included in the resonator 11D.

[0119] The coupling pattern 96 is formed point-symmetrically with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. In the present embodiment, the coupling pattern 96 is formed point-symmetrically in order to obtain good frequency characteristics.

[0120] like Fig.18 As shown, shielding via electrode portions 81C and 81D are formed in the dielectric substrate 14. When describing the shielding via electrode portions without distinguishing them from each other, reference numeral 81 is used, and when describing the shielding via electrode portions by distinguishing them from each other, reference numerals 81C and 81D are used.

[0121] One end of the shielding via electrode portion 81 is connected to the shielding conductor 12A. The other end of the shielding via electrode portion 81 is connected to the shielding conductor 12B. The shielding via electrode portion 81C is also connected to the electrode pattern 18c. The shielding via electrode portion 81C is also connected to the electrode pattern 19c. The shielding via electrode portion 81D is also connected to the electrode pattern 18d. The shielding via electrode portion 81D is also connected to the electrode pattern 19d.

[0122] The shielding via electrode section 81 includes one or more shielding via electrodes 82. In the present embodiment, one shielding via electrode section 81 includes two shielding via electrodes 82. That is, the shielding via electrode section 81C includes shielding via electrodes 82C and 82E. The shielding via electrode section 81D includes shielding via electrodes 82D and 82F.

[0123] According to the present embodiment, the coupling capacitor electrode 98 printed together with the capacitor electrode 18 is provided between the capacitor electrode 19 and the shield conductor 12A, and therefore, when the size of the capacitor electrode 18 increases, the size of the coupling capacitor electrode 98 located between the capacitor electrode 19 and the shield conductor 12A also increases. Therefore, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases due to the increase in the size of the capacitor electrode 18, the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 also increases due to the increase in the size of the coupling capacitor electrode 98. That is, in the present embodiment, when the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, not only the capacitance between the capacitor electrode 18 and the shield conductor 12A increases, but also the coupling capacitance between the capacitor electrode 19 and the coupling capacitor electrode 98 increases. Therefore, according to the present embodiment, even when a dimensional error or the like occurs when the capacitor electrode 18 is formed, it is possible to suppress the filter characteristics from being deteriorated.

[0124] Hereinafter, the invention that can be grasped from the above-listed embodiments will be described.

[0125] The filter (10) comprises: a dielectric substrate (14) having a first main surface (14b) and a second main surface (14a) located on the opposite side of the first main surface; a first shield conductor (12A) formed on the first main surface side of the dielectric substrate; a second shield conductor (12B) formed on the second main surface side of the dielectric substrate; a plurality of resonators (11) each comprising a via electrode portion (20) formed between the first shield conductor and the second shield conductor and a capacitor electrode (12B) connected to one end of the via electrode portion; 8, 19); and a first coupling capacitor electrode (98) which is not connected to any of the plurality of resonators, and is formed on a layer on which a first capacitor electrode (18B) among the plurality of capacitor electrodes is formed, opposite to the first shielding conductor, and the first coupling capacitor electrode is formed, and the layer on which the first capacitor electrode is formed is located between a layer on which a second capacitor electrode (19C) among the plurality of capacitor electrodes is formed and a layer on which the first shielding conductor is formed, and a portion of the first coupling capacitor electrode is located between the second capacitor electrode and the first shielding conductor. If such a configuration is adopted, even when a dimensional error or the like occurs when the capacitor electrode is formed, it is possible to suppress the filter characteristic from being deteriorated.

[0126] It may also be that in the above-mentioned filter, another part of the aforementioned first coupling capacitor electrode is located between the third capacitor electrode (19A) and the aforementioned first shielding conductor, and the third capacitor electrode (19A) is the aforementioned capacitor electrode formed on the same layer as the aforementioned second capacitor electrode.

[0127] It may also be that in the above-mentioned filter, another part of the first coupling capacitor electrode is located between the second coupling capacitor electrode (86A) formed on the same layer as the second capacitor electrode and the first shielding conductor, and the second coupling capacitor electrode is connected to the via electrode portion connected to the third capacitor electrode (18A), and the third capacitor electrode (18A) is the capacitor electrode formed on the same layer as the first capacitor electrode.

[0128] In the above filter, the other end of each of the plurality of via electrode portions may be connected to the second shield conductor.

[0129] In addition, the present invention is not limited to the above disclosure, and various configurations can be adopted without departing from the gist of the present invention.

Claims

1. A filter (10), comprising: A dielectric substrate (14) having a first main surface (14b) and a second main surface (14a) located on the opposite side of the first main surface; a first shield conductor (12A) formed on the first main surface side of the dielectric substrate; a second shield conductor (12B) formed on the second main surface side of the dielectric substrate; A plurality of resonators (11), each of which includes a via electrode portion (20) formed between the first shield conductor and the second shield conductor and a capacitor electrode (18, 19) connected to one end of the via electrode portion; and a first coupling capacitor electrode (98) which is not connected to any of the plurality of resonators and is opposite to the first shield conductor; The first coupling capacitor electrode is formed on a layer where the first capacitor electrode (18B) among the plurality of capacitor electrodes is formed, The layer on which the first capacitor electrode is formed is located between the layer on which the second capacitor electrode (19C) among the plurality of capacitor electrodes is formed and the layer on which the first shield conductor is formed. A portion of the first coupling capacitor electrode is located between the second capacitor electrode and the first shield conductor.

2. The filter according to claim 1, wherein Another portion of the first coupling capacitor electrode is located between a third capacitor electrode (19A) and the first shield conductor, and the third capacitor electrode (19A) is the capacitor electrode formed in the same layer as the second capacitor electrode.

3. The filter according to claim 1, wherein The other part of the first coupling capacitor electrode is located between the second coupling capacitor electrode (86A) formed in the same layer as the second capacitor electrode and the first shield conductor. The second coupling capacitor electrode is connected to the via electrode portion connected to a third capacitor electrode (18A) formed in the same layer as the first capacitor electrode.

4. The filter according to any one of claims 1 to 3, wherein: The other end of each of the plurality of via electrode portions is connected to the second shield conductor.

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