Method for manufacturing substrate laminate, and substrate laminate

Abstract

A method for manufacturing a substrate laminate includes: a step (A) of preparing a first laminate in which a first resin layer, a first substrate, and a first inorganic material layer are laminated in this order, the first resin layer being disposed on one surface, the first inorganic material layer being disposed on the other surface, and the second substrate being disposed on the other surface; a second laminate in which a second resin layer, a second substrate, and a second inorganic material layer are laminated in this order, the second resin layer being disposed on one surface, and the second inorganic material layer being disposed on the other surface; a step B in which the first laminate and the second laminate are laminated by bringing the first resin layer of the first laminate into contact with the second inorganic material layer of the second laminate; and a step C in which, after the step B, the first laminate and the second laminate are heated at 100 DEG C or higher.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a substrate stack and the substrate stack. Background Art

[0002] As electronic devices become smaller, lighter, and more high-performance, there is a demand for high integration of semiconductor chips, etc. However, it is difficult to fully meet this demand by miniaturizing circuits. Therefore, in recent years, a method has been proposed to achieve high integration by vertically stacking multiple semiconductor substrates (wafers), semiconductor chips, etc. to form a multi-layer three-dimensional structure. As a method for stacking semiconductor substrates (wafers), semiconductor chips, etc. (hereinafter sometimes referred to as "semiconductor substrates, etc."), a method of directly bonding substrates to each other, a method of using an adhesive, etc. have been proposed (for example, Patent Documents 1 to 3).

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 4-132258

[0004] Patent Document 2: Japanese Patent Application Publication No. 2010-226060

[0005] Patent Document 3: Japanese Patent Application Publication No. 2016-47895 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In direct bonding, there is a problem that voids are easily generated due to fine unevenness, particles, etc. caused by wiring on the substrate surface. As a method of stacking semiconductor substrates, etc., a method of bonding inorganic materials such as silicon oxide provided on the substrate to each other can also be conceived. However, in the method of bonding inorganic materials of the substrate to each other, there is a problem that voids are easily generated, just like direct bonding.

[0008] On the other hand, when bonding with an adhesive, the adhesive is applied to the substrate surface, and then the substrates are bonded to each other after being dried and in a semi-cured state. At this time, from the perspective of suppressing the generation of voids, it is considered that the bonding surface of the substrate is applied with an adhesive to form an adhesive layer, and the adhesive layers are bonded to each other. Furthermore, from the perspective of improving the bonding strength when bonding the bonding surfaces of the substrates to each other, it is preferred that the bonding surface of the substrate is subjected to surface activation treatments such as plasma treatment, FAB (Fast Atom Bombardment, fast atomic bombardment) treatment.

[0009] However, when the adhesive layer is subjected to a surface activation treatment, the resin contained in the adhesive layer may be affected by the surface activation treatment, and the adhesive layer may be deteriorated, which may affect reliability. Alternatively, from the perspective of removing particles from the bonding surface of the substrate, the bonding surface is sometimes cleaned, but if an adhesive layer is provided on the bonding surface, there is a problem that the cleaning method is limited. From the above aspects, it is desired to have a method for manufacturing a substrate laminate in which the restrictions on the surface activation treatment and cleaning treatment methods of the bonding surface of the substrate are suppressed even when a resin layer is provided on the bonding surface of the substrate.

[0010] One embodiment of the present invention is completed in view of the above-mentioned problems, and its purpose is to provide a manufacturing method of a substrate stack in which a resin layer can be set on the bonding surface of the substrate and the limitations of the surface activation treatment and cleaning treatment methods of the bonding surface of the substrate are suppressed, and a stack that can be used for the manufacturing method.

[0011] Methods for solving problems

[0012] A specific method for solving the above-mentioned problems is as follows.

[0013] <1> A method for manufacturing a substrate laminate, comprising:

[0014] Step A, preparing a first laminate and a second laminate, wherein the first laminate is laminated in the order of a first resin layer, a first substrate, and a first inorganic material layer, wherein the first resin layer is disposed on one surface, and the first inorganic material layer is disposed on the other surface, and the second laminate is laminated in the order of a second resin layer, a second substrate, and a second inorganic material layer, wherein the second resin layer is disposed on one surface, and the second inorganic material layer is disposed on the other surface;

[0015] Step B, laminating the first laminate and the second laminate by bringing the first resin layer of the first laminate into contact with the second inorganic material layer of the second laminate; and

[0016] Step C, after the step B, heating the first stack and the second stack at 100° C. or higher.

[0017] <2> The method for producing a substrate laminate according to <1>, wherein the first laminate includes electrodes on a portion of a surface of the first resin layer and a portion of a surface of the first inorganic material layer,

[0018] The second laminate includes electrodes on a portion of a surface of the second resin layer and a portion of a surface of the second inorganic material layer.

[0019] <3> The method for producing a substrate laminate according to <2>, further comprising, before step B, a step of subjecting the second inorganic material layer to a surface activation treatment.

[0020] <4> The method for manufacturing a substrate stack according to <1>, after the above-mentioned step C, includes the following steps: providing a through hole in the above-mentioned first stack and the above-mentioned second stack from the surface on the side of the above-mentioned first inorganic material layer toward the surface on the side of the above-mentioned second resin layer, and forming an electrode penetrating the above-mentioned first stack and the above-mentioned second stack in the above-mentioned through hole.

[0021] <5> The method for producing a substrate laminate according to any one of <1> to <4>, further comprising, before the step B, a step of washing the second inorganic material layer.

[0022] <6> The method for producing a substrate laminate according to any one of <1> to <5>, further comprising, before the step B, a step of providing a surface protection layer on the second inorganic material layer.

[0023] <7> According to any one of <1> to <6>, in the method for manufacturing a substrate laminate, before the first resin layer is brought into contact with the second inorganic material layer in the step B, the complex elastic modulus of the first resin layer at 23°C is 0.1 GPa to 20 GPa.

[0024] <8> The method for producing a substrate laminate according to any one of <1> to <7>, wherein before the first resin layer and the second inorganic material layer are brought into contact in the step B, a curing rate of the first resin layer is 70% to 100%.

[0025] <9> The method for producing a substrate laminate according to any one of <1> to <8>, wherein before the first resin layer and the second inorganic material layer are brought into contact in the step B, the surface roughness (Ra) of the first resin layer is 0.01 nm to 1.2 nm.

[0026] <10> The method for producing a substrate laminate according to any one of <1> to <9>, wherein the first resin layer has at least one functional group selected from the group consisting of a silanol group, an amino group, an epoxy group, a hydroxyl group, and a functional group having an unsaturated bond on a surface thereof.

[0027] <11> The method for producing a substrate laminate according to any one of <1> to <10>, wherein the first resin layer includes a siloxane bond and at least one selected from the group consisting of an ester bond, an ether bond, an amide bond, and an imide bond.

[0028] <12> The method for producing a substrate stack according to any one of <1> to <11>, wherein the second inorganic material layer contains at least one element selected from the group consisting of Si, Ga, Ge, and As.

[0029] <13> A substrate laminate having:

[0030] A first laminate having a first resin layer, a first substrate, and a first inorganic material layer in this order, wherein the first resin layer is arranged on one surface and the first inorganic material layer is arranged on the other surface; and

[0031] The second laminate comprises a second resin layer, a second substrate, and a second inorganic material layer in this order, wherein the second resin layer is arranged on one surface and the second inorganic material layer is arranged on the other surface.

[0032] The first stacked body and the second stacked body are stacked with the first resin layer of the first stacked body and the second inorganic material layer of the second stacked body interposed therebetween.

[0033] <14> The substrate laminate according to <13>, wherein the first laminate includes electrodes on a portion of a surface of the first resin layer and a portion of a surface of the first inorganic material layer,

[0034] The second laminate includes electrodes on a portion of a surface of the second resin layer and a portion of a surface of the second inorganic material layer.

[0035] Effects of the Invention

[0036] One embodiment of the present invention can provide a method for producing a substrate laminate in which a resin layer can be provided on a bonding surface of a substrate and in which restrictions on methods of surface activation treatment and cleaning treatment of the bonding surface of the substrate are suppressed, and a laminate that can be used in the production method. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] [Figure 1] Figure 1a to Figure 1h This is a schematic configuration diagram showing Example 1 of the method for producing a substrate laminate of the present disclosure.

[0038] [Figure 2] Figure 2a to Figure 2i This is a schematic configuration diagram showing Example 2 of the method for producing a substrate laminate of the present disclosure. DETAILED DESCRIPTION

[0039] In the present disclosure, a numerical range expressed using "to" means a range including the numerical values ​​described before and after "to" as the lower limit and the upper limit.

[0040] In the numerical range recorded in stages in the present disclosure, the upper limit or lower limit recorded in a numerical range can also be replaced by the upper limit or lower limit of the numerical range recorded in other stages. In addition, in the numerical range recorded in the present disclosure, the upper limit or lower limit of the numerical range can also be replaced by the value shown in the embodiment.

[0041] In the present disclosure, "substrate laminate" refers to a laminate having two substrates, i.e., a first substrate and a second substrate joined via a first resin layer and a second inorganic material layer. It should be noted that the substrate laminate may also have three or more substrates, and may also have a structure in which two of the three or more substrates are joined via a first resin layer and a second inorganic material layer.

[0042] In the present disclosure, “substrate” refers to “at least one of the first substrate and the second substrate”, “resin layer” refers to “at least one of the first resin layer and the second resin layer”, and “inorganic material layer” refers to “at least one of the first inorganic material layer and the second inorganic material layer”.

[0043] [Method for producing substrate laminate]

[0044] The manufacturing method of the substrate stack disclosed in the present invention includes: step A, preparing a first stack and a second stack, the first stack being stacked in the order of a first resin layer, a first substrate, and a first inorganic material layer, the first resin layer being arranged on one surface, and the first inorganic material layer being arranged on the other surface, and the second stack being stacked in the order of a second resin layer, a second substrate, and a second inorganic material layer, the second resin layer being arranged on one surface, and the second inorganic material layer being arranged on the other surface; step B, stacking the first stack and the second stack by bringing the first resin layer of the first stack into contact with the second inorganic material layer of the second stack; and step C, heating the first stack and the second stack at above 100° C. after the above step B.

[0045] In the manufacturing method of the substrate laminate of the present disclosure, at least two laminates stacked in the order of resin layer, substrate, and inorganic material layer are prepared in process A. For the two prepared laminates, in process B, the resin layer (first resin layer) of one laminate is contacted with the inorganic material layer (second inorganic material layer) of another laminate and laminated. Then, in process C, the two laminated laminates are heated at above 100°C to obtain a substrate laminate having a structure joined via a resin layer (first resin layer) and an inorganic material layer (second inorganic material layer). In the present disclosure, after the surface of the inorganic material layer is subjected to surface activation treatment, cleaning treatment, etc., two substrates can be joined via a resin layer and an inorganic material layer. Thus, it is possible to improve the bonding strength of the bonding surface or remove particles attached to the surface of the inorganic material layer without performing surface activation treatment, cleaning treatment, etc. on the surface of the resin layer. Therefore, it is possible to provide a method for producing a substrate laminate in which a resin layer can be provided on the bonding surface of the substrate and in which restrictions on methods of surface activation treatment and cleaning treatment of the bonding surface of the substrate are suppressed.

[0046] [Process A]

[0047] The manufacturing method of the substrate laminate of the present disclosure includes a step A of preparing a first laminate and a second laminate. The first laminate sequentially comprises a first resin layer, a first substrate, and a first inorganic material layer, wherein the first resin layer is arranged on one surface, and the first inorganic material layer is arranged on the other surface. Similarly, the second laminate sequentially comprises a second resin layer, a second substrate, and a second inorganic material layer, wherein the second resin layer is arranged on one surface, and the second inorganic material layer is arranged on the other surface.

[0048] (First Substrate and Second Substrate)

[0049] The materials of the first substrate and the second substrate are not particularly limited, as long as they are commonly used materials. It should be noted that the materials of the first substrate and the second substrate can be the same or different.

[0050] The first substrate and the second substrate preferably contain at least one element selected from the group consisting of Si, Al, Ti, Zr, Hf, Fe, Ni, Cu, Ag, Au, Ga, Ge, Sn, Pd, As, Pt, Mg, In, Ta and Nb. The materials of the first substrate and the second substrate include, for example, semiconductors: Si, InP, GaN, GaAs, InGaAs, InGaAlAs, SiC, oxides, carbides, nitrides: borosilicate glass (e.g., Pyrex (registered trademark)), quartz glass (SiO2), sapphire, ZrO2, Si3N4, AlN, piezoelectrics, dielectrics: BaTiO3, LiNbO3, SrTiO3, diamond, metals: Al, Ti, Fe, Cu, Ag, Au, Pt, Pd, Ta, Nb, etc.

[0051] In addition, the material of the first substrate and the second substrate may also be resin: polydimethylsiloxane (PDMS), epoxy resin, phenolic resin, polyimide, benzocyclobutene resin, polybenzoxazole, etc.

[0052] The first substrate and the second substrate may be a multilayer structure. For example, there may be a structure in which an inorganic layer such as silicon oxide, silicon nitride, SiCN (silicon carbonitride) is formed on the surface of a silicon substrate or the like; a structure in which an organic layer such as polyimide resin, polybenzoxazole resin, epoxy resin, CYCLOTENE (Dow Chemical), imide cross-linked siloxane resin, epoxy-modified siloxane, porous silica, organic cross-linked siloxane, Black Diamond (Applied Materials) or the like is formed on the surface of a silicon substrate or the like; a structure in which a composite of inorganic and organic substances is formed on a silicon substrate.

[0053] As main uses, each material can be used for the following purposes.

[0054] Si is used in semiconductor memory, LSI stacking, CMOS image sensors, MEMS sealing, optical devices, LEDs, etc.;

[0055] SiO2 is used in semiconductor memory, LSI stacking, MEMS sealing, micro-flow path, CMOS image sensor, optical device, LED, etc.;

[0056] PDMS is used for microfluidics;

[0057] InGaAlAs, InGaAs, and InP are used in optical devices;

[0058] InGaAlAs, GaAs, and GaN are used in LEDs, etc.

[0059] The thickness of the first substrate and the second substrate are each independently preferably 0.5 μm to 1 mm, more preferably 1 μm to 900 μm, and further preferably 2 μm to 900 μm.

[0060] The shapes of the first substrate and the second substrate are not particularly limited. For example, when the first substrate and the second substrate are silicon substrates, they may be silicon substrates formed with an interlayer insulating layer (Low-k film), and fine grooves (recesses), fine through holes, etc. may also be formed on the silicon substrate.

[0061] In the method for manufacturing the substrate laminate of the present disclosure, from the aspect of bonding strength, at least one of the surface of the first substrate in contact with the first resin layer and the surface of the second substrate in contact with the second resin layer may be subjected to surface treatment. For example, at least one functional group selected from the group consisting of a hydroxyl group, an epoxy group, a carboxyl group, an amino group, and a mercapto group may be formed by performing the surface treatment.

[0062] Examples of the surface treatment include plasma treatment, chemical treatment, and ozone treatment such as ultraviolet (UV) ozone treatment.

[0063] The hydroxyl groups can be provided on the surfaces of the first substrate and the second substrate respectively by subjecting the surfaces of the first substrate and the second substrate to surface treatment such as plasma treatment, chemical treatment, or ozone treatment such as UV ozone treatment.

[0064] The hydroxyl group is preferably present in a state of being bonded to at least one element selected from the group consisting of Si, Al, Ti, Zr, Hf, Fe, Ni, Cu, Ag, Au, Ga, Ge, Sn, Pd, As, Pt, Mg, In, Ta and Nb contained in the first substrate or the second substrate. The surface of the first substrate in contact with the first resin layer and the surface of the second substrate in contact with the second resin layer preferably have a silanol group containing a hydroxyl group.

[0065] The epoxy groups can be provided on the surfaces of the first substrate and the second substrate, respectively, by subjecting the surfaces of the first substrate and the second substrate to surface treatment such as silane coupling using epoxy silane.

[0066] The carboxyl groups can be provided on the surfaces of the first substrate and the second substrate, respectively, by subjecting the surfaces of the first substrate and the second substrate to surface treatment such as silane coupling using carboxyl silane.

[0067] The amino group can be provided on the surfaces of the first substrate and the second substrate, respectively, by subjecting the surfaces of the first substrate and the second substrate to surface treatment such as silane coupling using aminosilane.

[0068] The mercapto groups can be provided on the surfaces of the first substrate and the second substrate, respectively, by subjecting the surfaces of the first substrate and the second substrate to surface treatment such as silane coupling using mercaptosilane.

[0069] In order to improve the bonding strength, a primer such as a silane coupling agent may be formed into a film on the surface of at least one of the first substrate and the second substrate on which the resin material is applied.

[0070] (First Resin Layer and Second Resin Layer)

[0071] The first resin layer is a layer disposed on one surface of the first substrate, and the second resin layer is a layer disposed on one surface of the second substrate. For example, the first resin layer and the second resin layer are formed by applying a resin composition containing a resin material to one surface of the first substrate and one surface of the second substrate, respectively, and curing the formed resin composition layers, respectively.

[0072] The resin material contained in the resin composition is not particularly limited, and examples thereof include materials that form bonds or structures such as polyimide, polyamide, polyamideimide, polyparaxylene (Parylene), polyarylene ether, tetralin, octahydroanthracene, etc. through cross-linking; materials that form nitrogen-containing ring structures such as polybenzoxazole and polybenzoxazine; materials that form bonds or structures such as Si-O through cross-linking; and organic materials such as siloxane-modified compounds.

[0073] The resin material used to form the first resin layer and the resin material used to form the second resin layer may be the same or different.

[0074] Examples of the structure having a Si—O bond (siloxane bond) include structures represented by the following formulae (1) to (3).

[0075] [Chemistry 1]

[0076]

[0077] In the structure having Si-O bond (siloxane bond), the group bonded to Si may be substituted by an alkylene group, a phenylene group, or the like. For example, it may be a group having (-O-) x (R1) y Si-(R2)-Si(R1) y (-O-) x The structure of (R1 represents a methyl group, etc., R2 represents an alkylene group, a phenylene group, etc. x and y are each independently an integer greater than 0, and x+y is 3).

[0078] As materials that form Si-O bonds by crosslinking, for example, compounds represented by the following formulae (4) and (5) can be cited. In addition, the structures represented by formulae (1) and (2) can be generated, for example, by heating the compounds represented by formulae (4) and (5) to react.

[0079] [Chemistry 2]

[0080]

[0081] For example, in the case where the resin material contains a material that forms a bond or structure of polyimide, polyamide, polyamideimide, etc. by cross-linking, it preferably contains: a compound (A) having a cationic functional group containing at least one of a primary nitrogen atom and a secondary nitrogen atom, and having a weight-average molecular weight of 90 to 400,000; and a cross-linking agent (B) having 3 or more -C(=O)OX groups (X is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms) in the molecule, 1 to 6 of the 3 or more -C(=O)OX groups are -C(=O)OH groups, and having a weight-average molecular weight of 200 to 2000.

[0082] (Compound (A))

[0083] Compound (A) is a compound having a cationic functional group containing at least one of a primary nitrogen atom and a secondary nitrogen atom and having a weight average molecular weight of 90 to 400,000. The cationic functional group is not particularly limited as long as it is a functional group that can carry a positive charge and contains at least one of a primary nitrogen atom and a secondary nitrogen atom.

[0084] Furthermore, the compound (A) may contain a tertiary nitrogen atom in addition to the primary nitrogen atom and the secondary nitrogen atom.

[0085] In the present disclosure, "primary nitrogen atom" refers to a nitrogen atom that is bonded only to two hydrogen atoms and one atom other than a hydrogen atom (for example, a nitrogen atom contained in a primary amino group (-NH2 group)), or a nitrogen atom that is bonded only to three hydrogen atoms and one atom other than a hydrogen atom (cation).

[0086] In addition, the "secondary nitrogen atom" refers to a nitrogen atom bonded only to one hydrogen atom and two atoms other than hydrogen atoms (i.e., a nitrogen atom contained in the functional group represented by the following formula (a)), or a nitrogen atom bonded only to two hydrogen atoms and two atoms other than hydrogen atoms (cation).

[0087] In addition, a "tertiary nitrogen atom" refers to a nitrogen atom bonded only to three atoms other than hydrogen atoms (i.e., a nitrogen atom as a functional group represented by the following formula (b)) or a nitrogen atom bonded only to one hydrogen atom and three atoms other than hydrogen atoms (cation).

[0088] [Chemistry 3]

[0089]

[0090] In formula (a) and formula (b), * represents a bonding position to an atom other than a hydrogen atom.

[0091] Here, the functional group represented by the above formula (a) may be a secondary amino group (-NHR a Here, R aThe functional group representing a part of an alkyl group may be a divalent linking group contained in the polymer skeleton.

[0092] In addition, the functional group (ie, tertiary nitrogen atom) represented by the above formula (b) may be a tertiary amino group (-NR b R c Here, R b and R c The functional groups each independently represent a part of an alkyl group) may be a trivalent linking group contained in the polymer skeleton.

[0093] The weight average molecular weight of compound (A) is 90 to 400,000. As compound (A), for example, aliphatic amines, compounds having a siloxane bond (Si-O bond) and an amino group, amine compounds having a ring structure without a Si-O bond in the molecule, etc. can be cited. In the case where compound (A) is an aliphatic amine, the weight average molecular weight is preferably 10,000 to 200,000. In the case where compound (A) is a compound having a siloxane bond (Si-O bond) and an amino group, the weight average molecular weight is preferably 130 to 10,000, more preferably 130 to 5,000, and further preferably 130 to 2,000. In the case where compound (A) is an amine compound having a ring structure without a Si-O bond in the molecule, the weight average molecular weight is preferably 90 to 600.

[0094] In addition, in this disclosure, the weight average molecular weight means the weight average molecular weight of polyethylene glycol conversion measured by GPC (Gel Permeation Chromatography) method for the monomers.

[0095] Specifically, the weight average molecular weight was calculated as follows: an aqueous solution with a sodium nitrate concentration of 0.1 mol / L was used as an elution solvent, the refractive index was detected at a flow rate of 1.0 mL / min using an analytical device Shodex DET RI-101 and two analytical columns (TSKgel G6000 PWXL-CP and TSKgel G3000 PWXL-CP manufactured by Tosoh), and polyethylene glycol / polyethylene oxide was used as a standard to calculate using analytical software (Empower3 manufactured by Waters).

[0096] In addition, the compound (A) may further have an anionic functional group, a nonionic functional group, etc. as necessary.

[0097] The nonionic functional group may be a hydrogen bond accepting group or a hydrogen bond donating group. Examples of the nonionic functional group include a hydroxyl group, a carbonyl group, and an ether group (—O—).

[0098] The anionic functional group is not particularly limited as long as it is a functional group capable of being negatively charged. Examples of the anionic functional group include a carboxylic acid group, a sulfonic acid group, and a sulfate group.

[0099] Examples of the compound (A) include aliphatic amines, and more specifically, polymers of alkyleneimines such as ethyleneimine, propyleneimine, butyleneimine, pentyleneimine, hexyleneimine, heptyleneimine, octyleneimine, trimethyleneimine, tetramethyleneimine, pentamethyleneimine, hexamethyleneimine, and octamethyleneimine, i.e., polyalkyleneimines; polyallylamine; and polyacrylamide.

[0100] Polyethyleneimine (PEI) can be produced by a known method described in Japanese Patent Publication No. 43-8828, Japanese Patent Publication No. 49-33120, Japanese Patent Publication No. 2001-213958, International Publication No. 2010 / 137711, etc. Polyalkyleneimines other than polyethyleneimine can also be produced by the same method as polyethyleneimine.

[0101] Compound (A) is also preferably a derivative of the above-mentioned polyalkyleneimine (polyalkyleneimine derivative; particularly preferably a polyethyleneimine derivative). The polyalkyleneimine derivative is not particularly limited as long as it is a compound that can be produced using the above-mentioned polyalkyleneimine. Specifically, there can be mentioned polyalkyleneimine derivatives in which an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms), an aryl group, etc. are introduced into the polyalkyleneimine, and polyalkyleneimine derivatives obtained by introducing a crosslinking group such as a hydroxyl group into the polyalkyleneimine.

[0102] These polyalkyleneimine derivatives can be produced by a conventional method using the above-mentioned polyalkyleneimine, and specifically, can be produced according to the method described in, for example, Japanese Patent Application Laid-Open No. 6-016809.

[0103] Furthermore, as the polyalkyleneimine derivative, a highly branched polyalkyleneimine obtained by reacting a cationic functional group-containing monomer with polyalkyleneimine to increase the branching degree of the polyalkyleneimine is also preferred.

[0104] Examples of methods for obtaining highly branched polyalkyleneimines include: a method in which a monomer containing a cationic functional group is reacted with a polyalkyleneimine having a plurality of secondary nitrogen atoms in its skeleton to replace at least one of the plurality of secondary nitrogen atoms with the monomer containing a cationic functional group; a method in which a monomer containing a cationic functional group is reacted with a polyalkyleneimine having a plurality of primary nitrogen atoms at its terminal to replace at least one of the plurality of primary nitrogen atoms with the monomer containing a cationic functional group; and the like.

[0105] Examples of the cationic functional group introduced to increase the degree of branching include aminoethyl, aminopropyl, diaminopropyl, aminobutyl, diaminobutyl, triaminobutyl and the like. From the viewpoint of reducing the cationic functional group equivalent and increasing the cationic functional group density, the aminoethyl group is preferred.

[0106] The polyethyleneimine and its derivatives may be commercially available products. For example, polyethyleneimine and its derivatives available from Nippon Shokubai Co., Ltd., BASF Corporation, MP-Biomedicals Corporation, etc. may be appropriately selected and used.

[0107] As compound (A), in addition to the above-mentioned aliphatic amines, compounds having Si-O bonds and amino groups can be mentioned. As compounds having Si-O bonds and amino groups, for example, siloxane diamine, silane coupling agents having amino groups, siloxane polymers of silane coupling agents having amino groups, etc. can be mentioned.

[0108] As a silane coupling agent which has an amino group, the compound represented by following formula (A-3) is mentioned, for example.

[0109] [Chemistry 4]

[0110]

[0111] In formula (A-3), R 1 represents an alkyl group having 1 to 4 carbon atoms which may be substituted. 2 and R 3 Each independently represents an alkylene group having 1 to 12 carbon atoms, an ether group or a carbonyl group which may be substituted (a carbonyl group, an ether group or the like may be contained in the skeleton). 4 and R 5 Each independently represents an alkylene group having 1 to 4 carbon atoms which may be substituted or a single bond. Ar represents a divalent or trivalent aromatic ring. 1 represents hydrogen or an optionally substituted alkyl group having 1 to 5 carbon atoms. 2 represents hydrogen, a cycloalkyl group, a heterocyclic group, an aryl group, or an alkyl group having 1 to 5 carbon atoms which may be substituted (a carbonyl group, an ether group, etc. may be included in the skeleton). 1 , R 2 , R 3 , R 4 , R 5 , X 1 Can be the same or different.

[0112] As R 1 , R 2 , R 3 , R 4 , R 5 , X 1 , X 2The substituents of the alkyl group and the alkylene group in the above-mentioned group are each independently amino, hydroxyl, alkoxy, cyano, carboxylic acid, sulfonic acid, halogen and the like.

[0113] Examples of the divalent or trivalent aromatic ring in Ar include a divalent or trivalent benzene ring. 2 Examples of the aryl group include a phenyl group, a methylbenzyl group, and a vinylbenzyl group.

[0114] Specific examples of the silane coupling agent represented by formula (A-3) include N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminoisobutyldimethylmethoxysilane, N-(2-aminoethyl)-3-aminoisobutylmethyldimethoxysilane, N-(2-aminoethyl)-11-aminoundecyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, (aminoethylaminoethyl)phenyltriethoxysilane, methylbenzylaminoethylaminopropyltrimethoxysilane, benzylaminoethylaminopropyltriethoxysilane, 3-ureidopropyltriethoxysilane, trimethoxysilane, (aminoethylaminoethyl)phenethyltrimethoxysilane, (aminoethylaminomethyl)phenethyltrimethoxysilane, N-[2-[3-(trimethoxysilyl)propylamino]ethyl]ethylenediamine, 3-aminopropyldiethoxymethylsilane, 3-aminopropyldimethoxymethylsilane, 3-aminopropyldimethylethoxysilane, 3-aminopropyldimethylmethoxysilane, trimethoxy[2-(2-aminoethyl)-3-aminopropyl]silane, diaminomethylmethyldiethoxysilane, methylaminomethylmethyldiethoxysilane, p-aminophenyltrimethoxysilane, N-methylaminopropyltriethoxysilane, N-methylaminopropylmethyldiethoxysilane, (phenylaminomethyl)methyldiethoxysilane, acetamidopropyltrimethoxysilane and hydrolyzates thereof.

[0115] Examples of the amino group-containing silane coupling agent other than that represented by formula (A-3) include N,N-bis[3-(trimethoxysilyl)propyl]ethylenediamine, N,N′-bis[3-(trimethoxysilyl)propyl]ethylenediamine, bis[(3-triethoxysilyl)propyl]amine, piperazinylpropylmethyldimethoxysilane, bis[3-(triethoxysilyl)propyl]urea, bis(methyldiethoxysilylpropyl)amine, 2,2-dimethoxy-1,6-diaza-2-silacyclooctane, 3,5-diamino-N-(4-(methoxydimethylsilyl)phenyl)benzamide, 3,5-diamino-N-(4-(triethoxysilyl)phenyl)benzamide, 5-(ethoxydimethylsilyl)benzene-1,3-diamine, and hydrolyzates thereof.

[0116] The above-mentioned silane coupling agent with amino group can be used alone or in combination of two or more. In addition, a silane coupling agent with amino group and a silane coupling agent without amino group can be used in combination. For example, in order to improve the adhesion with metal, a silane coupling agent with mercapto group can be used.

[0117] In addition, polymers (siloxane polymers) formed by these silane coupling agents via siloxane bonds (Si-O-Si) can also be used. For example, polymers having a linear siloxane structure, polymers having a branched siloxane structure, polymers having a cyclic siloxane structure, polymers having a caged siloxane structure, etc. can be obtained from the hydrolyzate of 3-aminopropyltrimethoxysilane. The caged siloxane structure is represented by the following formula (A-1), for example.

[0118] [Chemistry 5]

[0119]

[0120] Examples of the siloxane diamine include compounds represented by the following formula (A-2): In the formula (A-2), i is an integer of 0 to 4, j is an integer of 1 to 3, and Me is a methyl group.

[0121] [Chemistry 6]

[0122]

[0123] Examples of the siloxane diamine include 1,3-bis(3-aminopropyl)tetramethyldisiloxane (in the formula (A-2), i=0, j=1) and 1,3-bis(2-aminoethylamino)propyltetramethyldisiloxane (in the formula (A-2), i=1, j=1).

[0124] As compound (A), in addition to the above-mentioned aliphatic amines and compounds having Si-O bonds and amino groups, amine compounds having no Si-O bonds in the molecule but having a ring structure can also be cited. Among them, amine compounds having a weight average molecular weight of 90 or more and 600 or less without Si-O bonds in the molecule and having a ring structure are preferred. As amine compounds having a weight average molecular weight of 90 or more and 600 or less without Si-O bonds in the molecule and having a ring structure, alicyclic amines, aromatic ring amines, heterocyclic amines, etc. can be cited. There can be multiple ring structures in the molecule, and the multiple ring structures can be the same or different. As amine compounds having a ring structure, compounds having aromatic rings are more preferred, because they are easy to obtain compounds that are more stable to heat.

[0125] In addition, as the amine compound having no Si-O bond in the molecule and having a ring structure and having a weight average molecular weight of 90 to 600, a compound having a primary amino group is preferred from the viewpoint that it is easy to form a thermally crosslinked structure of amide, amideimide, imide, etc. together with the crosslinking agent (B) to improve the heat resistance. Furthermore, as the above-mentioned amine compound, a diamine compound having two primary amino groups, a triamine compound having three primary amino groups, etc. are preferred from the viewpoint that it is easy to increase the number of thermally crosslinked structures of amide, amideimide, imide, etc. together with the crosslinking agent (B) to further improve the heat resistance.

[0126] Examples of the alicyclic amine include cyclohexylamine and dimethylaminocyclohexane.

[0127] Examples of the aromatic cyclic amine include diaminodiphenyl ether, xylenediamine (preferably p-xylenediamine), diaminobenzene, diaminotoluene, methylenedianiline, dimethyldiaminobiphenyl, bis(trifluoromethyl)diaminobiphenyl, diaminobenzophenone, diaminobenzanilide, bis(aminophenyl)fluorene, bis(aminophenoxy)benzene, bis(aminophenoxy)biphenyl, dicarboxydiaminodiphenylmethane, diaminoresorcinol, dihydroxybenzidine, diaminobenzidine, 1,3,5-triaminophenoxybenzene, 2,2'-dimethylbenzidine, tris(4-aminophenyl)amine, 2,7-diaminofluorene, 1,9-diaminofluorene, and dibenzylamine.

[0128] Examples of the heterocyclic ring of the heterocyclic amine include a heterocyclic ring containing a sulfur atom as a heteroatom (e.g., a thiophene ring), or a heterocyclic ring containing a nitrogen atom as a heteroatom (e.g., a 5-membered ring such as a pyrrole ring, a pyrrolidine ring, a pyrazole ring, an imidazole ring, and a triazole ring; a 6-membered ring such as an isocyanurate ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a piperidine ring, a piperazine ring, and a triazine ring; a condensed ring such as an indole ring, an indoleline ring, a quinoline ring, an acridine ring, a naphthyridine ring, a quinazoline ring, a purine ring, and a quinoxaline ring, etc.), and the like.

[0129] For example, examples of the heterocyclic amine having a nitrogen-containing heterocyclic ring include melamine, ammeline, melam, melem, and tris(4-aminophenyl)amine.

[0130] Furthermore, examples of the amine compound having both a heterocyclic ring and an aromatic ring include N2,N4,N6-tris(4-aminophenyl)-1,3,5-triazine-2,4,6-triamine and the like.

[0131] Compound (A) has a primary or secondary amino group, and therefore can firmly bond the substrates to each other through electrostatic interaction with functional groups such as hydroxyl, epoxy, carboxyl, amino, and mercapto groups that may be present on the surfaces of the first and second substrates, or by tightly forming covalent bonds with the above-mentioned functional groups.

[0132] In addition, the compound (A) has a primary or secondary amino group and is therefore easily soluble in the polar solvent (D) described below. By using a compound (A) that is easily soluble in a polar solvent (D), the affinity with the hydrophilic surface of a substrate such as a silicon substrate is increased, so that a smooth film is easily formed, and the thickness of the first resin layer and the second resin layer can be reduced.

[0133] The compound (A) is preferably an aliphatic amine or a compound having a Si—O bond and an amino group from the viewpoint of forming a smooth thin film, and is more preferably a compound having a Si—O bond and an amino group from the viewpoint of heat resistance.

[0134] When compound (A) contains a compound having a Si-O bond and an amino group, from the perspective of forming a smooth film, the ratio of the total number of primary nitrogen atoms and secondary nitrogen atoms in compound (A) to the number of silicon atoms (total number of primary nitrogen atoms and secondary nitrogen atoms / number of silicon atoms) is preferably greater than 0.2 and less than 5.

[0135] When compound (A) includes a compound having a Si-O bond and an amino group, from the perspective of adhesion between substrates, in the compound having a Si-O bond and an amino group, it is preferred that the non-crosslinking group such as a methyl group bonded to Si satisfies the relationship (non-crosslinking group) / Si<2 in terms of molar ratio. It is inferred that by satisfying this relationship, the crosslinking density (crosslinking of Si-O-Si bonds with amide bonds, imide bonds, etc.) of the formed film is increased, the substrates have sufficient adhesion, and the peeling of the substrates can be suppressed.

[0136] As described above, compound (A) has a cationic functional group containing at least one of a primary nitrogen atom and a secondary nitrogen atom. Here, when compound (A) contains a primary nitrogen atom, the proportion of the primary nitrogen atom in the compound (A) to all nitrogen atoms is preferably 20 mol% or more, more preferably 25 mol% or more, and further preferably 30 mol% or more. In addition, compound (A) may have a cationic functional group containing a primary nitrogen atom and not containing a nitrogen atom other than a primary nitrogen atom (e.g., a secondary nitrogen atom, a tertiary nitrogen atom).

[0137] When compound (A) contains secondary nitrogen atoms, the ratio of secondary nitrogen atoms in compound (A) to all nitrogen atoms is preferably 5 mol% to 50 mol%, more preferably 10 mol% to 45 mol%.

[0138] In addition, compound (A) may contain tertiary nitrogen atoms in addition to primary nitrogen atoms and secondary nitrogen atoms. When compound (A) contains tertiary nitrogen atoms, the proportion of tertiary nitrogen atoms in all nitrogen atoms in compound (A) is preferably from 20 mol% to 50 mol%, and more preferably from 25 mol% to 45 mol%.

[0139] In the present disclosure, the content of the component derived from compound (A) in the first resin layer or the second resin layer is not particularly limited, and can be, for example, 1% by mass to 82% by mass, preferably 5% by mass to 82% by mass, and more preferably 13% by mass to 82% by mass, relative to the first resin layer as a whole or the second resin layer as a whole.

[0140] (Crosslinking agent (B))

[0141] The crosslinking agent (B) is a compound having three or more -C(=O)OX groups (X is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms) in the molecule, one or more and six or less of the three or more -C(=O)OX groups (hereinafter also referred to as "COOX") are -C(=O)OH groups (hereinafter also referred to as "COOH"), and a weight average molecular weight of 200 to 2000.

[0142] The crosslinking agent (B) is a compound having 3 or more -C(=O)OX groups (X is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms) in the molecule, preferably a compound having 3 or more -C(=O)OX groups in the molecule, and more preferably a compound having 3 or 4 -C(=O)OX groups in the molecule.

[0143] In the crosslinking agent (B), X in the -C(=O)OX group may be a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and preferably a hydrogen atom, a methyl group, an ethyl group, or a propyl group. It should be noted that X in the -C(=O)OX group may be the same or different.

[0144] The crosslinking agent (B) is a compound having 1 to 6 -C(=O)OH groups in which X is a hydrogen atom in the molecule, preferably a compound having 1 to 4 -C(=O)OH groups in the molecule, more preferably a compound having 2 to 4 -C(=O)OH groups in the molecule, and further preferably a compound having 2 or 3 -C(=O)OH groups in the molecule.

[0145] The crosslinking agent (B) is a compound having a weight average molecular weight of 200 to 2000. The weight average molecular weight of the crosslinking agent (B) is preferably 200 to 1000, more preferably 200 to 600, and even more preferably 200 to 400.

[0146] The crosslinking agent (B) preferably has a ring structure in the molecule. Examples of the ring structure include an alicyclic structure and an aromatic ring structure. In addition, the crosslinking agent (B) may have multiple ring structures in the molecule, and the multiple ring structures may be the same or different.

[0147] As the alicyclic structure, for example, an alicyclic structure having 3 to 8 carbon atoms can be cited, preferably an alicyclic structure having 4 to 6 carbon atoms, and the ring structure may be saturated or unsaturated. More specifically, as the alicyclic structure, saturated alicyclic structures such as a cyclopropane ring, a cyclobutane ring, a cyclopentane ring, a cyclohexane ring, a cycloheptane ring, and a cyclooctane ring can be cited; unsaturated alicyclic structures such as a cyclopropene ring, a cyclobutene ring, a cyclopentene ring, a cyclohexene ring, a cycloheptene ring, and a cyclooctene ring can be cited.

[0148] The aromatic ring structure is not particularly limited as long as it is a ring structure showing aromaticity, and examples thereof include benzene-based aromatic rings such as benzene ring, naphthalene ring, anthracene ring, and perylene ring; aromatic heterocyclic rings such as pyridine ring and thiophene ring; and non-benzene-based aromatic rings such as indene ring and azulene ring.

[0149] The ring structure possessed by the crosslinking agent (B) in the molecule is preferably at least one selected from the group consisting of a cyclobutane ring, a cyclopentane ring, a cyclohexane ring, a benzene ring and a naphthalene ring. From the perspective of further improving the heat resistance of the first resin layer and the second resin layer, at least one of a benzene ring and a naphthalene ring is more preferred.

[0150] As described above, the crosslinking agent (B) may have a plurality of ring structures in the molecule, and when the ring structure is benzene, the crosslinking agent (B) may have a biphenyl structure, a benzophenone structure, a diphenyl ether structure, or the like.

[0151] The crosslinking agent (B) preferably has a fluorine atom in the molecule, more preferably has 1 or more and 6 or less fluorine atoms in the molecule, and further preferably has 3 or more and 6 or less fluorine atoms in the molecule. For example, the crosslinking agent (B) may have a fluoroalkyl group in the molecule, specifically, a trifluoroalkyl group or a hexafluoroisopropyl group.

[0152] Furthermore, as the crosslinking agent (B), carboxylic acid compounds such as alicyclic carboxylic acids, benzene carboxylic acids, naphthalene carboxylic acids, diphthalic acids, and fluorinated aromatic ring carboxylic acids; carboxylate compounds such as alicyclic carboxylic acid esters, benzene carboxylic acid esters, naphthalene carboxylic acid esters, diphthalic acid esters, and fluorinated aromatic ring carboxylic acid esters can be cited. It should be noted that the carboxylate compound is a compound having a carboxyl group (-C(=O)OH group) in the molecule, and at least one X among three or more -C(=O)OX groups is an alkyl group having a carbon number of 1 to 6 (i.e., having an ester bond). In the present disclosure, since the crosslinking agent (B) is a carboxylate compound, the aggregation caused by the association of the compound (A) and the crosslinking agent (B) is suppressed, the number of aggregates and pits is reduced, and the adjustment of the film thickness becomes easy.

[0153] The carboxylic acid compound is preferably a tetravalent or less carboxylic acid compound containing four or less -C(=O)OH groups, and more preferably a trivalent or tetravalent carboxylic acid compound containing three or four -C(=O)OH groups.

[0154] The carboxylic acid ester compound is preferably a compound containing 3 or less carboxyl groups (—C(═O)OH groups) and 3 or less ester bonds in the molecule, and more preferably a compound containing 2 or less carboxyl groups and 2 or less ester bonds in the molecule.

[0155] In addition, in the case where X in the three or more -C(=O)OX groups of the above-mentioned carboxylic acid ester compound is an alkyl group having 1 to 6 carbon atoms, X is preferably a methyl group, an ethyl group, a propyl group, a butyl group or the like, and is preferably an ethyl group or a propyl group from the viewpoint of further suppressing the aggregation caused by the association of the compound (A) and the crosslinking agent (B).

[0156] Specific examples of the carboxylic acid compounds include, but are not limited to, alicyclic carboxylic acids such as 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,3,5-cyclohexanetricarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, and 1,2,3,4,5,6-cyclohexanehexacarboxylic acid; 1,2,4-benzenetricarboxylic acid, 1,3,5-benzenetricarboxylic acid, pyromellitic acid, and 3,4'-diphthalic acid. acid), phenylenebis(trimellitic acid), benzene pentacrylic acid, benzene hexacarboxylic acid and other phenylcarboxylic acids; 1,4,5,8-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid and other naphthalenecarboxylic acids; 3,3',5,5'-tetracarboxy diphenylmethane, biphenyl-3,3',5,5'-tetracarboxylic acid, biphenyl-3,4',5-tricarboxylic acid, biphenyl-3,3',4,4'-tetracarboxylic acid, benzophenone-3,3',4,4'-tetracarboxylic acid, 4,4'-oxydiphthalic acid, 3,4'-oxydiphthalic acid, 1,3-bis(phthalic acid)tetramethyldisiloxane, 4,4'-(ethynyl-1,2-diyl)diphthalic acid (4,4'-(Ethyne-1,2-diyl)diphthalic acid acid), 4,4'-(1,4-phenylenebis(oxy))diphthalic acid diphthalic acid, such as 4,4'-([1,1'-biphenyl]-4,4'-diylbis(oxy)diphthalic acid and 4,4'-((oxybis(4,1-phenylene))bis(oxy))diphthalic acid; perylene carboxylic acid such as perylene-3,4,9,10-tetracarboxylic acid; anthracene carboxylic acid such as anthracene-2,3,6,7-tetracarboxylic acid; fluorinated aromatic ring carboxylic acids such as 4,4'-(hexafluoroisopropylidene)diphthalic acid, 9,9-bis(trifluoromethyl)-9H-xanthene-2,3,6,7-tetracarboxylic acid and 1,4-bis(trifluoromethyl)pyromellitic acid.

[0157] Specific examples of the carboxylic acid ester compound include compounds in which at least one carboxyl group in the specific examples of the carboxylic acid compound is substituted with an ester group. Examples of the carboxylic acid ester compound include half-esterified compounds represented by the following general formulas (B-1) to (B-5).

[0158] [Chemistry 7]

[0159]

[0160] R in general formulae (B-1) to (B-5) are each independently an alkyl group having 1 to 6 carbon atoms, preferably a methyl group, an ethyl group, a propyl group, or a butyl group, and more preferably an ethyl group or a propyl group.

[0161] Y in the general formula (B-2) is a single bond, O, C=O, or C(CF3)2.

[0162] The half-esterified compound can be produced by, for example, mixing carboxylic anhydride, which is an anhydride of the above-mentioned carboxylic acid compound, with an alcohol solvent and ring-opening the carboxylic anhydride.

[0163] In the present disclosure, the content of the component derived from the crosslinking agent (B) in the first resin layer and the second resin layer is not particularly limited. For example, the ratio of the number of carbonyl groups (-(C=O)-Y) in the substance derived from the crosslinking agent (B) to the number of all nitrogen atoms in the substance derived from the compound (A) ((-(C=O)-Y) / N) is preferably 0.1 to 3.0, more preferably 0.3 to 2.5, and further preferably 0.4 to 2.2. Here, in -(C=O)-Y, Y represents a nitrogen atom, OH or ester group crosslinked by imide or amide. By making (-(C=OY) / N 0.1 to 3.0, the first resin layer and the second resin layer appropriately have a crosslinking structure such as amide, amideimide, and imide, and the heat resistance is more excellent.

[0164] (Polar solvent (D))

[0165] Step A can impart a resin composition containing a resin material to the surface of at least one of the first substrate and the second substrate. In this case, the resin composition containing a resin material preferably contains a polar solvent (D) together with the above-mentioned compound (A), a crosslinking agent (B) and other resin materials. Here, the polar solvent (D) refers to a solvent having a relative dielectric constant of 5 or more at room temperature. Specific examples of the polar solvent (D) include protic inorganic compounds such as water and heavy water; alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, isopentanol, cyclohexanol, ethylene glycol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, benzyl alcohol, diethylene glycol, triethylene glycol, and glycerol; ethers such as tetrahydrofuran and dimethoxyethane; aldehydes and ketones such as furfural, acetone, methyl ethyl ketone, and cyclohexane; acid derivatives such as acetic anhydride, ethyl acetate, butyl acetate, ethylene carbonate, propylene carbonate, formaldehyde, N-methylformamide, N,N-dimethylformamide, N-methylacetamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, and hexamethylphosphoric acid amide; nitriles such as acetonitrile and propionitrile; nitro compounds such as nitromethane and nitrobenzene; and sulfur compounds such as dimethyl sulfoxide. As the polar solvent (D), a protic solvent is preferably contained, water is more preferably contained, and ultrapure water is further preferably contained.

[0166] The content of the polar solvent (D) in the resin composition is not particularly limited, and is, for example, 1.0% by mass to 99.99896% by mass, and preferably 40% by mass to 99.99896% by mass, based on the entire resin composition.

[0167] The boiling point of the polar solvent (D) is preferably 150° C. or lower, more preferably 120° C. or lower, from the perspective of volatilizing the polar solvent (D) by heating during formation of the first resin layer and the second resin layer to reduce the amount of residual solvent in the first resin layer and the second resin layer.

[0168] (Additive (C))

[0169] The resin composition containing the resin material may contain an additive (C) in addition to the above-mentioned compound (A), a resin material such as a crosslinking agent (B), a polar solvent (D), etc. As the additive (C), an acid (C-1) having a carboxyl group and a weight average molecular weight of 46 to 195, and a base (C-2) having a nitrogen atom and a weight average molecular weight of 17 to 120 without a ring structure may be cited. In addition, although the additive (C) is volatilized by heating when the first resin layer and the second resin layer are formed, the first resin layer and the second resin layer in the substrate laminate of the present disclosure may also contain the additive (C).

[0170] Acid (C-1) is an acid having a weight average molecular weight of 46 or more and 195 or less having a carboxyl group. It can be inferred that by including acid (C-1) as an additive (C), the amino group in compound (A) and the carboxyl group in acid (C-1) form an ionic bond, thereby suppressing the aggregation caused by the association of compound (A) and cross-linking agent (B). In more detail, it can be inferred that the interaction (for example, electrostatic interaction) between the ammonium ion derived from the amino group in compound (A) and the carboxyl ion derived from the carboxyl group in acid (C-1) is stronger than the interaction between the ammonium ion derived from the amino group in compound (A) and the carboxyl ion derived from the carboxyl group in cross-linking agent (B), so aggregation can be suppressed. It should be noted that the present invention is not limited by the above speculation.

[0171] The acid (C-1) is not particularly limited as long as it is a compound having a carboxyl group and a weight average molecular weight of 46 to 195, and examples thereof include monocarboxylic acid compounds, dicarboxylic acid compounds, oxydicarboxylic acid compounds, etc. More specifically, examples of the acid (C-1) include formic acid, acetic acid, malonic acid, oxalic acid, citric acid, benzoic acid, lactic acid, glycolic acid, glyceric acid, butyric acid, methoxyacetic acid, ethoxyacetic acid, phthalic acid, terephthalic acid, picolinic acid, salicylic acid, and 3,4,5-trihydroxybenzoic acid.

[0172] In the present disclosure, the content of the acid (C-1) in the resin composition containing the resin material is not particularly limited. For example, the ratio of the number of carboxyl groups in the acid (C-1) to the number of all nitrogen atoms in the compound (A) (COOH / N) is preferably 0.01 to 10, more preferably 0.02 to 6, and even more preferably 0.5 to 3.

[0173] Base (C-2) is a base having a nitrogen atom and a weight average molecular weight of 17 to 120. It can be inferred that the resin composition containing the resin material contains the base (C-2) as an additive (C), so that the carboxyl group in the crosslinking agent (B) and the amino group in the base (C-2) form an ionic bond, thereby suppressing the aggregation caused by the association of the compound (A) and the crosslinking agent (B). In more detail, it can be inferred that the interaction between the carboxyl ion derived from the carboxyl group in the crosslinking agent (B) and the ammonium ion derived from the amino group in the base (C-2) is stronger than the interaction between the ammonium ion derived from the amino group in the compound (A) and the carboxyl ion derived from the carboxyl group in the crosslinking agent (B), so aggregation can be suppressed. It should be noted that the present invention is not limited by the above speculation.

[0174] The base (C-2) is not particularly limited as long as it is a compound having a nitrogen atom and a weight average molecular weight of 17 to 120 without a ring structure, and examples thereof include monoamine compounds, diamine compounds, etc. More specifically, examples of the base (C-2) include ammonia, ethylamine, ethanolamine, diethylamine, triethylamine, ethylenediamine, N-acetylethylenediamine, N-(2-aminoethyl)ethanolamine, and N-(2-aminoethyl)glycine.

[0175] In the present disclosure, the content of the base (C-2) in the resin composition containing the resin material is not particularly limited. For example, the ratio of the number of nitrogen atoms in the base (C-2) to the number of carboxyl groups in the cross-linking agent (B) (N / COOH) is preferably 0.5 to 5, and more preferably 0.9 to 3.

[0176] When the first resin layer and the second resin layer of the substrate laminate of the present disclosure are required to have insulation properties, tetraethoxysilane, tetramethoxysilane, bis(triethoxysilyl)ethane, bis(triethoxysilyl)methane, bis(methyldiethoxysilyl)ethane, 1,1,3,3,5,5-hexaethoxy-1,3,5-trisilacyclohexane, 1,3,5,7-tetramethyl-1,3,5,7-tetrahydroxycyclosiloxane, 1,1,4,4-tetramethyl-1,4-diethoxydisilene, 1,3,5-trimethyl-1,3,5-trimethyl-1,3,5-triethoxy-1,3,5-trisilacyclohexane may be mixed in order to improve insulation properties or mechanical strength. Furthermore, methyltriethoxysilane, dimethyldiethoxysilane, trimethylethoxysilane, etc. may be mixed in order to improve the hydrophobicity of the first resin layer and the second resin layer having insulation properties. These compounds may also be mixed in order to control the etching selectivity.

[0177] The resin composition containing the resin material may contain a solvent other than the polar solvent (D), and examples thereof include n-hexane.

[0178] In order to improve, for example, electrical characteristics, the resin composition including the resin material may contain phthalic acid, benzoic acid, or the like, or derivatives thereof.

[0179] In addition, in order to suppress corrosion of, for example, copper, the resin composition including the resin material may contain benzotriazole or a derivative thereof.

[0180] The pH of the resin composition containing the resin material is not particularly limited, but is preferably 2.0 or more and 12.0 or less.

[0181] In addition, when an acid (C-1) is used as the additive (C), it is preferred to mix a mixture of the acid (C-1) and the compound (A) with the crosslinking agent (B). That is, it is preferred to mix the compound (A) and the acid (C-1) in advance before mixing the compound (A) and the crosslinking agent (B). Thus, when the compound (A) and the crosslinking agent (B) are mixed, the turbidity and gelation of the resin composition containing the resin material can be appropriately suppressed (when gelling, sometimes it takes time to make the resin composition transparent, which is not preferred).

[0182] In addition, when a base (C-2) is used as the additive (C), it is preferred to mix a mixture of the base (C-2) and the crosslinking agent (B) with the compound (A). That is, it is preferred to mix the crosslinking agent (B) and the base (C-2) in advance before mixing the compound (A) with the crosslinking agent (B). Thus, when the compound (A) and the crosslinking agent (B) are mixed, the turbidity and gelation of the resin composition containing the resin material can be appropriately suppressed (when gelling, sometimes it takes time to make the resin composition transparent, which is not preferred).

[0183] As a method for imparting a resin material to the surface of at least one of the first substrate and the second substrate, for example, vapor deposition polymerization, CVD (chemical vapor deposition) method, ALD (atomic layer deposition) method and other vapor phase film forming methods, immersion method, spraying method, spin coating method, rod coating method and other coating methods can be cited. In the case of imparting the resin material by a coating method, it is preferred to impart a resin composition containing the above-mentioned resin material. For example, in the case of forming a film with a film thickness of micrometer size, it is preferred to use a rod coating method, and in the case of forming a film with a film thickness of nanometer size (several nm to hundreds of nm), it is preferred to use a spin coating method. It should be noted that the film thickness of the resin material can be appropriately adjusted according to the expected thickness of the first resin layer and the second resin layer.

[0184] For example, the method of applying the resin material by spin coating is not particularly limited, and for example, the following method can be used: while rotating the first substrate with a spin coater, a resin composition containing the resin material is dripped onto the surface of the first substrate, and then the rotation speed of the first substrate is increased to dry it.

[0185] In the method of applying the resin material by spin coating, there are no particular restrictions on the conditions such as the rotation speed of the substrate, the amount and time of dripping the resin composition containing the resin material, the rotation speed of the substrate during drying, etc., as long as appropriate adjustments are made taking into account the thickness of the formed resin material, etc.

[0186] The substrate provided with the resin material may be cleaned to remove excess resin material provided. Examples of the cleaning method include wet cleaning using a rinse liquid such as a polar solvent, plasma cleaning, and the like.

[0187] In the method for manufacturing a substrate laminate of the present disclosure, step A may include the following steps: curing the resin material applied to one surface of the first substrate and one surface of the second substrate to form the first resin layer and the second resin layer. For example, the first resin layer and the second resin layer are formed by curing the resin material by heating or the like. At this time, when the resin material contains a thermosetting compound, the resin material is cured by heating the resin material at a temperature above the curing temperature.

[0188] The resin material applied to one surface of the first substrate and one surface of the second substrate is preferably cured by heating at 100° C. to 450° C.

[0189] It should be noted that the above-mentioned temperature refers to the temperature of the surface of the resin material applied to the above-mentioned surface.

[0190] By heating the resin material, the solvent in the resin composition containing the resin material is removed. In addition, the components in the resin material react to obtain a cured product, and the first resin layer and the second resin layer containing the cured product are formed.

[0191] From the viewpoint of suppressing thermal damage to devices such as semiconductor memories, the temperature is preferably 150°C to 450°C, more preferably 180°C to 400°C, further preferably 180°C to 250°C, and particularly preferably 180°C to 200°C.

[0192] The pressure when the resin material applied to the surface is heated is not particularly limited, but the absolute pressure is preferably greater than 17 Pa and not more than atmospheric pressure.

[0193] The absolute pressure is more preferably 1000 Pa or more and below atmospheric pressure, further preferably 5000 Pa or more and below atmospheric pressure, and particularly preferably 10000 Pa or more and below atmospheric pressure.

[0194] The resin material applied to the surface can be heated by a common method using a furnace or a hot plate. As the furnace, for example, SPX-1120 manufactured by Apex Corporation, VF-1000LP manufactured by Koyo Thermo System Co., Ltd., etc. can be used.

[0195] The heating of the resin material applied to the surface may be performed in an air atmosphere or in an inert gas (nitrogen, argon, helium, etc.) atmosphere.

[0196] The heating time of the resin material applied to the surface is not particularly limited, and is, for example, 3 hours or less, preferably 1 hour or less. The lower limit of the heating time is not particularly limited, and can be, for example, 5 minutes.

[0197] In order to shorten the curing time of the resin material imparted to the above-mentioned surface, the resin material imparted to the above-mentioned surface can be irradiated with ultraviolet rays (UV). As ultraviolet rays, ultraviolet rays with a wavelength of 170nm to 230nm, excimer light with a wavelength of 222nm, excimer light with a wavelength of 172nm, etc. are preferred. In addition, ultraviolet rays are preferably irradiated under an inert gas atmosphere.

[0198] Whether the resin material has been cured can be confirmed by measuring the peak intensity of specific bonds and structures using FT-IR (Fourier transform infrared spectroscopy). Examples of the specific bonds and structures include bonds and structures generated by a crosslinking reaction.

[0199] For example, when an amide bond, imide bond, siloxane bond, tetralin structure, oxazole ring structure, etc. are formed, it can be determined that the resin material has been cured, and this can be confirmed by measuring the peak intensity derived from these bonds, structures, etc. using FT-IR.

[0200] The amide bond can be detected by-1 and about 1520cm -1 The presence of the vibration peak is confirmed.

[0201] The imide bond can be detected by -1 and about 1720cm -1 The presence of the vibration peak is confirmed.

[0202] Siloxane bonds can be detected through 1000 cm -1 ~1080cm -1 The presence of the vibration peak between them is confirmed.

[0203] The structure of tetralin can be seen at 1500 cm -1 The presence of the vibration peak between them is confirmed.

[0204] The oxazole ring structure can be seen at about 1625 cm -1 and about 1460cm -1 The presence of the vibration peak is confirmed.

[0205] At least one of the first resin layer and the second resin layer formed by curing the resin material preferably has a siloxane bond and at least any one selected from the group consisting of an ester bond, an ether bond, an amide bond, and an imide bond, and more preferably has a siloxane bond and an imide bond.

[0206] The first resin layer and the second resin layer formed by curing the resin material preferably have a sodium and potassium content of 10 ppb or less on an element basis. If the sodium or potassium content is 10 ppb or less on an element basis, poor electrical characteristics of the semiconductor device such as poor operation of the transistor can be suppressed.

[0207] The amount of silicon on the surfaces of the first resin layer and the second resin layer is each independently preferably 20 atomic % or less, more preferably 15 atomic % or less, and further preferably 10 atomic % or less.

[0208] The amount of silicon on the surface of the resin layer can be evaluated by atomic ratio measurement using an X-ray photoelectron spectrometer (XPS). Specifically, the atomic ratio can be measured using AXIS-NOVA (manufactured by Kratos) as XPS from the peak intensity of the narrow spectrum when the total amount of each element detected in the broad spectrum is set to 100%.

[0209] The thickness of the first resin layer and the second resin layer is preferably 0.001 μm to 8.0 μm, more preferably 0.01 μm to 6.0 μm, and further preferably 0.03 μm to 5.0 μm. By making the thickness of the first resin layer and the second resin layer 0.001 μm or more, the bonding strength with the second inorganic material layer, other layers, etc. can be improved. By making the thickness of the first resin layer and the second resin layer 8.0 μm or less, the thickness deviation of the resin layer can be suppressed when the resin layer is formed on a large-area substrate.

[0210] When electrodes are provided on a portion of the surface of the first resin layer and a portion of the surface of the second resin layer, the thickness of the first resin layer and the second resin layer is preferably 0.01 μm to 8.0 μm, more preferably 0.03 μm to 6.0 μm, and further preferably 0.05 μm to 5.0 μm, from the perspective of improving the bonding strength with the second inorganic material layer, other layers, etc. and suppressing the thickness deviation of the first resin layer and the second resin layer.

[0211] When no electrodes are provided on the surface of the first resin layer and the surface of the second resin layer, from the perspective of improving the bonding strength with the second inorganic material layer, other layers, etc. and suppressing the thickness deviation of the first resin layer and the second resin layer, the thickness of the first resin layer and the second resin layer is preferably greater than 0.001 μm and less than 1.0 μm, more preferably 0.01 μm to 0.8 μm, and further preferably 0.03 μm to 0.6 μm.

[0212] From the temporary fixing of the first resin layer and the second inorganic material layer described later being easily carried out at low temperatures, and improving the bonding strength of the first laminate and the second laminate in the substrate laminate, the first resin layer preferably has a functional group that can form a chemical bond on the surface of the first resin layer, more preferably has at least one functional group selected from the group consisting of a silanol group (Si-OH group), an amino group, an epoxy group, a hydroxyl group and a functional group with an unsaturated bond, from the aspect of heat resistance, further preferably has a silanol group. These functional groups can be formed by surface treatment after the first resin layer is formed, and can also be formed by silane coupling agent processing etc. Alternatively, the compound containing these functional groups can also be mixed in a resin combination.

[0213] In addition, as a functional group which has an unsaturated bond, a vinyl group, an allyl group, an acryloyl group, a methacryloyl group, a styryl group, etc. are mentioned.

[0214] The second resin layer may have the above-mentioned functional group capable of forming a chemical bond on the surface of the second resin layer.

[0215] Whether the surface of the resin layer has Si-OH groups can be evaluated by performing surface analysis on the resin layer using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Specifically, PHInanoTOFII (ULVAC-PHI Co., Ltd.) as TOF-SIMS can be used to evaluate whether the surface of the resin layer has Si-OH groups based on the presence or absence of a peak with a mass-to-charge ratio (m / Z) of 45.

[0216] After forming the first resin layer or the second resin layer, the surface of at least one of the first resin layer and the second resin layer may be planarized. As a method for planarization, fly cutting, chemical mechanical polishing (CMP), etc. may be cited. The planarization method may be a single method or a combination of two or more methods.

[0217] After forming the first resin layer or the second resin layer, the surface of at least one of the first resin layer and the second resin layer may be cleaned. Examples of the cleaning method include wet cleaning using a rinse liquid and dry cleaning using plasma or the like. Examples of wet cleaning include ultrasonic cleaning using pure water and spin cleaning using a solvent such as NMP.

[0218] (First Inorganic Material Layer and Second Inorganic Material Layer)

[0219] The first inorganic material layer is a layer disposed on the other surface of the first substrate, and the second inorganic material layer is a layer disposed on the other surface of the second substrate. For example, the first inorganic material layer may be formed on the other surface of the first substrate after the first resin layer is formed on one surface of the first substrate, or vice versa. The first resin layer may be formed after the first inorganic material layer is formed. The same is true for the second substrate, and the order of forming the second resin layer and the second inorganic material layer is not particularly limited.

[0220] The materials of the first inorganic material layer and the second inorganic material layer are not particularly limited, for example, as long as they are the materials of the inorganic materials used when the inorganic materials are bonded to each other on the semiconductor substrate. Specifically, the first inorganic material layer and the second inorganic material layer can each independently contain at least one element selected from the group consisting of Si, Al, Ti, Zr, Hf, Fe, Ni, Cu, Ag, Au, Ga, Ge, Sn, Pd, As, Pt, Mg, In, Ta and Nb, preferably at least one element selected from the group consisting of Si, Ga, Ge and As. The first inorganic material layer and the second inorganic material layer may contain oxides, carbides, nitrides, etc. of the above elements.

[0221] The materials of the first inorganic material layer and the second inorganic material layer may be the same or different.

[0222] The method for forming the inorganic material layer on the surface of the substrate is not particularly limited, and conventionally known methods for forming the inorganic material layer may be cited, such as CVD, sputtering, AGD (aerosol vapor deposition), sol-gel method, anodization treatment, thermal decomposition method, and the like.

[0223] (electrode)

[0224] The first laminate may include electrodes on a portion of the surface of the first resin layer and a portion of the surface of the first inorganic material layer, and the second laminate may include electrodes on a portion of the surface of the second resin layer and a portion of the surface of the second inorganic material layer. In step B, the electrodes are preferably arranged so that the electrode provided on the first resin layer side contacts the electrode provided on the second inorganic material layer.

[0225] A through hole may be provided from the surface on the first resin layer side of the first stack toward the surface on the first inorganic material layer side, and an electrode penetrating the first stack may be provided in the through hole. A through hole may be provided from the surface on the second resin layer side of the second stack toward the surface on the second inorganic material layer side, and an electrode penetrating the second stack may be provided in the through hole.

[0226] The material of the electrode is not particularly limited, and examples thereof include conventionally known electrode materials, etc. Specifically, examples thereof include copper, solder, tin, gold, silver, aluminum, indium, cobalt, and tungsten.

[0227] The method of providing electrodes on the first stack and the second stack is not particularly limited, and a conventionally known method can be adopted.

[0228] In the first laminate, the electrode may be formed on the surface on which the resin material is applied before forming the first resin layer, or may be formed on the surface on which the first resin layer is formed after forming the first resin layer. The same is true for the second laminate.

[0229] In the first stack, the electrode may be formed on the surface on which the inorganic material layer is to be formed before the first inorganic material layer is formed, or may be formed on the surface on which the first inorganic material layer is to be formed after the first inorganic material layer is formed.

[0230] The electrode may be formed in a protruding shape on the surface of the first substrate or the second substrate, may be formed in a state of penetrating the first substrate or the second substrate, or may be formed in a state of being buried in the first substrate or the second substrate.

[0231] When an electrode is formed before forming a resin layer or before forming an inorganic material layer, by removing the resin layer or inorganic material layer on the electrode, a portion of the surface of the resin layer or a portion of the surface of the inorganic material layer has a structure with an electrode. As a method for removing the resin layer or inorganic material layer on the conductive layer, fly cutting, chemical mechanical polishing (CMP), plasma dry etching, etc. can be cited. The removal method can use one method alone, or two or more methods can be used in combination. For example, in the fly cutting method, a surface planer (DFS8910 (manufactured by DISCO Co., Ltd.)) can be used. When CMP is used, as a slurry, for example, a slurry containing silicon dioxide or aluminum oxide commonly used for resin grinding, a slurry containing hydrogen peroxide and silicon dioxide used for metal grinding, etc. can be used. When plasma dry etching is used, fluorocarbon plasma, oxygen plasma, etc. can also be used.

[0232] When the resin layer or inorganic material layer on the electrode surface is removed to expose the electrode, the oxide on the electrode surface may be reduced as needed. As a reduction treatment method, there are methods of heating the substrate at 100°C to 300°C in an acid atmosphere such as formic acid, and methods of heating the substrate in a hydrogen atmosphere. These treatments may be performed simultaneously with step C described later.

[0233] When the electrode is formed after forming the resin layer or after forming the inorganic material layer, for example, a hole for forming the electrode can be formed on the surface of the substrate on which the resin layer is formed or the surface of the substrate on which the inorganic material layer is formed by a known method, and the electrode can be formed in the formed hole. Examples of the hole formation method include dry etching using gas, laser ablation, and the like.

[0234] Examples of the method for forming the electrode include electroplating, chemical plating, sputtering, and an inkjet method.

[0235] When the resin material is photosensitive, holes for forming electrodes can be formed in the resin material applied to at least one of the first substrate and the second substrate by photolithography. Alternatively, after the resin material is cured to form at least one of the first resin layer and the second resin layer, electrodes can be formed in the formed holes.

[0236] The first stacked body and the second stacked body may be stacked bodies that are separated into individual pieces by dicing as necessary. For example, a dicing machine (DAD6340 (manufactured by DISCO Corporation)) or the like may be used for the dicing process.

[0237] [Process B]

[0238] The method for producing a substrate laminate of the present disclosure includes a step B of laminating the first laminate and the second laminate by bringing the first resin layer of the first laminate into contact with the second inorganic material layer of the second laminate.

[0239] Step B is a step of bringing the first resin layer into contact with the second inorganic material layer before joining the first laminate and the second laminate via the first resin layer and the second inorganic material layer in the later-described step C. The first laminate and the second laminate are brought into contact so as to have a desired positional relationship when joining the first laminate and the second laminate.

[0240] For example, when the electrodes are provided on the first and second stacks, respectively, the first and second stacks are preferably brought into contact with each other so that the electrode provided on the first resin layer side contacts the electrode provided on the second inorganic material layer.

[0241] The curing rate of the first resin layer is preferably 70% to 100% before the first resin layer is brought into contact with the second inorganic material layer in step B. This tends to make the first stack and the second stack firmly bonded in step C described later, and less likely to cause positional shift (alignment shift).

[0242] The curing rate of the first resin layer is more preferably 80% or more, further preferably 85% or more, particularly preferably 90% or more, and further preferably 93% or more. In addition, the curing rate of the first resin layer may be 100%, 99% or less, 95% or less, or 90% or less.

[0243] The preferred range of the curing rate of the second resin layer is the same as the preferred range of the curing rate of the first resin layer. The curing rate of the second resin layer may be the curing rate before contacting with other layers (eg, other inorganic material layers).

[0244] The curing rate of the resin layer (at least one of the first resin layer and the second resin layer) containing at least one selected from the group consisting of an amide bond, an imide bond, a siloxane bond, a tetralin structure, an oxazole ring structure, an ester bond and an ether bond is more preferably 80% or more, more preferably 85% or more, particularly preferably 90% or more, and further preferably 93% or more. The curing rate of the resin layer (at least one of the first resin layer and the second resin layer) containing a siloxane bond and at least any one selected from the group consisting of an ester bond, an ether bond, an amide bond and an imide bond is more preferably 80% or more, more preferably 85% or more, particularly preferably 90% or more, and further preferably 93% or more.

[0245] The curing rate of the first resin layer formed by curing the resin material can be confirmed, for example, as follows: in the resin material before being applied to the first substrate, in the first resin layer before the first resin layer is brought into contact with the second inorganic material layer in step B, and in the first resin layer after step C, the peak intensity of specific bonds and structures is measured by FT-IR (Fourier transform infrared spectroscopy) (the sum of these peak intensities in the case of multiple peaks such as imide and amide), and the increase or decrease rate of the peak intensity is determined for confirmation. It should be noted that in the case of a band-shaped peak that is difficult to separate peaks such as a siloxane bond, the maximum peak intensity can be used.

[0246] Specifically, when a specific bond and structure are generated by the curing reaction, the increase rate of the peak intensity can be calculated by the following formula, and the calculated value can be used as the curing rate of the first resin layer.

[0247] Increase rate of peak intensity (curing rate of the first resin layer) = [(peak intensity of specific bonds and structures of the first resin layer before the first resin layer is brought into contact with the second inorganic material layer in step B) / (peak intensity of specific bonds and structures of the first resin layer after heating at 300°C for 1 hour in step C)] × 100

[0248] It should be noted that background signal removal can be performed by a common method. In addition, FT-IR measurement can be performed by a transmission method or a reflection method as needed.

[0249] Regarding the increase rate of the peak intensity, when there are a plurality of bonds or structures causing an increase in the peak intensity, the peak intensity may be replaced with the total intensity of the plurality of peak intensities.

[0250] Before the first resin layer and the second inorganic material layer are brought into contact in step B, the composite elastic modulus of the first resin layer at 23° C. is preferably 0.1 GPa to 20 GPa, and more preferably 0.1 GPa to 10 GPa. Thus, the voids formed when the first resin layer and the second inorganic material layer are brought into contact in step B are absorbed by the first resin layer in step C, thereby suppressing the generation of voids. In addition, thereby, it is easy to temporarily fix the first resin layer and the second inorganic material layer described later at a low temperature.

[0251] From the perspective of appropriately suppressing the generation of voids, the composite elastic modulus of the first resin layer at 23°C is preferably 8 GPa or less, and more preferably 6 GPa or less. In addition, from the perspective of appropriately suppressing the misalignment of the alignment, the composite elastic modulus of the first resin layer at 23°C is preferably 0.1 GPa or more, and more preferably 1 GPa or more.

[0252] The preferred range of the complex elastic modulus of the second resin layer at 23° C. is the same as the preferred range of the complex elastic modulus of the first resin layer at 23° C. The complex elastic modulus of the second resin layer at 23° C. may be the complex elastic modulus at 23° C. before contacting with other layers (e.g., other inorganic material layers).

[0253] The complex elastic modulus of the resin layer at 23° C. can be measured by the method described below.

[0254] A resin composition containing a resin material was prepared, spin-coated on a silicon substrate, and then heated at 400° C. for 10 minutes to prepare a measurement sample. For the prepared measurement sample, a nanoindenter (trade name TI-950Tribo Indenter, manufactured by Hysitron, Berkovich type indenter) was used to measure the unloading-displacement curve at 23° C. under the condition of a test depth of 20 nm, and the composite elastic modulus at 23° C. was calculated from the maximum load and the maximum displacement according to the calculation method of the reference (Handbook of Micro / nano Tribology (Second Edition), compiled by Bharat Bhushan, CRC Press).

[0255] It should be noted that, here, the complex elastic modulus is defined by the following formula (1). In formula (1), E r Represents the composite elastic modulus, E i The Young's modulus of the indenter is 1140 GPa, ν i The Poisson's ratio of the pressure head is 0.07, E s and ν s represent the Young's modulus and Poisson's ratio of the specimen, respectively.

[0256] [Number 1]

[0257]

[0258] The surface roughness (Ra) of the first resin layer is preferably 0.01 nm to 1.2 nm, more preferably 0.1 nm to 1.0 nm, before the first resin layer and the second inorganic material layer are brought into contact in step B. This facilitates temporary fixing of the first resin layer and the second inorganic material layer described below at low temperatures.

[0259] In addition, the preferred range of the surface roughness (Ra) of the second resin layer is the same as the preferred range of the surface roughness (Ra) of the first resin layer. The surface roughness (Ra) of the second resin layer may be the surface roughness (Ra) before contacting with other layers (e.g., other inorganic material layers).

[0260] The surface roughness of the resin layer can be evaluated by morphological observation using a scanning probe microscope (SPM). Specifically, the surface roughness is determined by measuring a 3 μm×3 μm square area using a SPA400 (manufactured by Hitachi High-Technologies Corporation) as an SPM in a dynamic force microscope mode.

[0261] The method for producing a substrate laminate of the present disclosure may include various steps described below before the above-mentioned step B. The various steps below are preferably performed after step A and before step B.

[0262] The manufacturing method of the substrate laminate of the present disclosure may include a step of performing a surface activation treatment on the second inorganic material layer before step B. By performing the surface activation treatment, the bonding strength between the first resin layer and the second inorganic material layer can be improved. In particular, when electrodes are provided on the bonding surfaces of the first laminate and the second laminate and the electrodes are bonded to each other, it is preferred to perform the surface activation treatment from the viewpoint of promoting the diffusion of metals such as copper contained in the electrodes to improve the bonding strength between the electrodes and from the viewpoint of reducing the heating temperature during metal diffusion.

[0263] In addition, the first inorganic material layer in the first substrate may be subjected to surface activation treatment. In particular, when the first inorganic material layer is bonded to other layers (eg, other resin layers), the first inorganic material layer may be subjected to surface activation treatment before bonding.

[0264] Specific examples of the surface activation treatment include plasma treatment and FAB (Fast Atom Bombardment) treatment.

[0265] The method for producing a substrate laminate of the present disclosure may include a step of washing the second inorganic material layer from the viewpoint of removing particles, etc., before step B. The washing step is preferably performed after the step of performing the surface treatment and before step B.

[0266] In addition, the first inorganic material layer in the first substrate may be cleaned. In particular, when the first inorganic material layer is bonded to another layer (eg, another resin layer), the first inorganic material layer may be cleaned before bonding.

[0267] The cleaning method is not particularly limited, and examples thereof include wet cleaning using solvents such as alkaline cleaning solutions, acidic cleaning solutions, cleaning solutions containing hydrofluoric acid, and liquids containing permanganate (desmear removal solutions), wet cleaning using pure water, etc., and dry cleaning using UV ozone, plasma, etc.

[0268] In the method for manufacturing a substrate laminate of the present disclosure, a step of providing a surface protective layer on the second inorganic material layer may be included before step B in order to prevent foreign matter from adhering to the inorganic material layer (for example, to prevent foreign matter from adhering during cutting). The step of providing the surface protective layer is preferably performed before the above-mentioned cleaning step and before step B.

[0269] The surface protection layer is not particularly limited as long as it can protect the second inorganic material layer, and examples thereof include water-soluble resins, photoresists that can be cleaned with organic solvents such as NMP (N-methyl-2-pyrrolidone), etc. As the water-soluble resin, Hogomax from Disco can be used.

[0270] The second laminate provided with the surface protection layer can be cut as needed, and the surface protection layer can be peeled off after the cutting process. At this time, it is preferred to peel off the surface protection layer after the cutting process, and after peeling off the surface protection layer, the cleaning step and the process B are processed in this order.

[0271] The method for producing a substrate laminate of the present disclosure may include a step of temporarily fixing the first laminate and the second laminate after step B and before step C. Temporary fixing of the first laminate and the second laminate is preferably performed at a low temperature of 100° C. or higher than room temperature, more preferably at a low temperature of 50° C. or higher than room temperature, and even more preferably at room temperature.

[0272] When the first substrate and the second substrate are silicon substrates, the surface energy of the bonding interface of the two stacked bodies in the state where the first stacked body and the second stacked body are temporarily fixed is preferably 0.05 J / m 2 More preferably, 0.1 J / m 2 More preferably, 0.15 J / m 2 above.

[0273] The surface energy (bonding strength) of the above-mentioned bonding interface can be obtained by a blade insertion test according to the method of non-patent literature MPMaszara, G.Goetz, A.Cavigila and JB Mckitterick, Journal of Applied Physics, 64 (1988) 4943-4950. A blade with a thickness of 0.1mm to 0.3mm is inserted into the bonding interface of the temporarily fixed laminate, and the distance of the laminate peeling off from the blade tip is measured using an infrared light source and an infrared camera. Then, the surface energy can be obtained based on the following formula.

[0274] γ=3×10 9 ×tb 2 ×E 2 ×t 6 / (32×L 4 ×E×t 3 )

[0275] Here, γ represents the surface energy (J / m 2 ), t b represents the thickness of the blade (m), E represents the Young's modulus of the silicon substrate included in the first substrate and the second substrate (GPa), t represents the thickness of the first substrate and the second substrate (m), and L represents the distance (m) that the laminate is peeled off from the blade tip.

[0276] [Process C]

[0277] The method for producing a substrate laminate of the present disclosure includes step C of heating the first laminate and the second laminate at 100° C. or higher after step B. Thus, a substrate laminate is obtained in which the first laminate and the second laminate are bonded via the first resin layer and the second inorganic material layer.

[0278] The pressure at which the first stack and the second stack are bonded is not particularly limited, but the absolute pressure is preferably greater than 10 -4 Pa and below atmospheric pressure.

[0279] The above absolute pressure is more preferably 10 -3 It is preferably 100 Pa or more and atmospheric pressure or less, more preferably 100 Pa or more and atmospheric pressure or less, and particularly preferably 1000 Pa or more and atmospheric pressure or less.

[0280] The bonding of the first stack and the second stack may be performed in an air atmosphere or in an inert gas (nitrogen, argon, helium, etc.) atmosphere.

[0281] In the step C, the first stacked body and the second stacked body are preferably heated at 100° C. to 450° C. in a state where the first resin layer and the second inorganic material layer are in contact with each other.

[0282] It should be noted that the above-mentioned temperature refers to the temperature of the surface of the first substrate on which the first resin layer is formed.

[0283] The temperature is preferably 100°C to 400°C, more preferably 130°C to 350°C, more preferably 150°C to 300°C, further preferably 150°C to 250°C, particularly preferably 150°C to 200°C.

[0284] When the electrodes are arranged so that the electrode provided on the first resin layer side contacts the electrode provided on the second inorganic material layer in step B, the temperature is preferably 130° C. or higher, more preferably 150° C. or higher, and further preferably 200° C. or higher. As a result, there is a tendency that the components (e.g., copper) contained in the electrode provided on the first resin layer side and the electrode provided on the second inorganic material layer diffuse and the bonding strength between the electrodes is improved.

[0285] The heating in step C can be performed by a common method using a furnace or a hot plate.

[0286] The heating in step C may be performed in an air atmosphere or in an inert gas (nitrogen, argon, helium, etc.) atmosphere.

[0287] The heating time in step C is not particularly limited, and is, for example, 3 hours or less, and preferably 1 hour or less. The lower limit of the heating time is not particularly limited, and can be, for example, 5 minutes.

[0288] In step C, the first laminate and the second laminate may be pressurized while the first resin layer and the second inorganic material layer are in contact with each other in order to improve the bonding strength between the first laminate and the second laminate. Pressurization may be performed simultaneously with heating.

[0289] The pressure when the first and second laminates are pressurized is not particularly limited, but is preferably 0.1 MPa to 10 MPa, and more preferably 0.1 MPa to 5 MPa. As a pressurizing device, for example, TEST MINIPRESS manufactured by Toyo Seiki Seisaku-sho Co., Ltd. may be used.

[0290] The method for manufacturing a substrate laminate of the present disclosure may include the following step after step C: providing a through hole in the first laminate and the second laminate from the surface on the first inorganic material layer side toward the surface on the second resin layer side, and forming an electrode penetrating the first laminate and the second laminate in the through hole. In the case where the electrode is not formed in the substrate laminate obtained in step C, it is preferred to form an electrode penetrating the first laminate and the second laminate in the through hole by performing a step of forming the electrode.

[0291] For example, a through hole penetrating the first stack and the second stack may be formed by a known method, and an electrode may be formed in the formed hole. Examples of the hole forming method include dry etching using a gas and laser ablation.

[0292] Examples of a method for forming the electrode that penetrates the first stack and the second stack include electroplating, chemical plating, sputtering, and an inkjet method.

[0293] The material of the electrode penetrating the first stack and the second stack is not particularly limited, and examples thereof include conventionally known electrode materials, etc. Specifically, examples thereof include copper, solder, tin, gold, silver, aluminum, indium, cobalt, and tungsten.

[0294] In the method for manufacturing a substrate laminate of the present disclosure, at least one of the first substrate and the second substrate may further be laminated with another substrate, another laminate, etc. on the surface on the first inorganic material layer side and the surface on the second resin layer side. Preferred materials for the other substrates are the same as those for the first substrate and the second substrate. Preferred aspects of the other laminates are the same as those for the first laminate and the second laminate.

[0295] In the method for producing a substrate stack of the present disclosure, after step C, the surface of the substrate stack may be subjected to thinning processing (back grinding or back grinding) as necessary.

[0296] (Example of the laminated structure of substrate laminate)

[0297] Examples of the laminated structure of the substrate laminate in various applications are shown below. It should be noted that the bonding layer refers to a layer in a bonded state consisting of an inorganic material layer / resin layer.

[0298] MEMS packaging application: Si / bonding layer / Si, SiO2 / bonding layer / Si, SiO2 / bonding layer / SiO2, Cu / bonding layer / Cu,

[0299] Microfluidic applications; PDMS / bonding layer / PDMS, PDMS / bonding layer / SiO2,

[0300] CMOS image sensor uses: SiO2 / bonding layer / SiO2, Si / bonding layer / Si, SiO2 / bonding layer / Si,

[0301] Through Silicon Via (TSV) Application: SiO2 (with Cu electrode) / bonding layer / SiO2 (with Cu electrode), Si (with Cu electrode) / bonding layer / Si (with Cu electrode),

[0302] Optical device use; (InGaAlAs, InGaAs, InP, GaAs) / bonding layer / Si,

[0303] LED uses: (InGaAlAs, GaAs, GaN) / junction layer / Si, (InGaAlAs, GaAs, GaN) / junction layer / SiO2, (InGaAlAs, GaAs, GaN) / junction layer / (Au, Ag, Al), (InGaAlAs, GaAs, GaN) / junction layer / sapphire.

[0304] Below, use Figure 1a to Figure 1h as well as Figure 2a to Figure 2i An example of a method for manufacturing a substrate laminate is described. It should be noted that the present disclosure is not limited to the configuration shown in the drawings. Figure 1a to Figure 1h as well as Figure 2a to Figure 2i The size of the components in the figure is conceptual, and the relative relationship between the sizes of the components is not limited to this. In addition, in each of the drawings, the same reference numerals are marked in all drawings for components having substantially the same function, and repeated descriptions are sometimes omitted.

[0305] <Example 1 of the method for producing a substrate laminate>

[0306] Below, use Figure 1a to Figure 1h Example 1 of a method for manufacturing a substrate laminate is described. Figure 1a As shown, a wafer 3 having a through electrode 4 and a flattened surface is prepared. An inorganic material layer 5 such as an oxide film is formed on the surface of the wafer 3. The wafer 3 having the electrode 4 is fixed to the carrier 1 via a temporary fixing material 2.

[0307] Then, if Figure 1b As shown, the inorganic material layer 5 on the surface of the wafer 3 is subjected to the surface activation treatment as described above.

[0308] Furthermore, a laminated body is prepared which includes an inorganic material layer 15, a wafer 13, and a resin layer 16 in this order and further includes an electrode 14 penetrating the wafer 13. Figure 1c As shown, the surface protection material 6 is arranged on the inorganic material layer 15 side in the laminate.

[0309] like Figure 1d As shown, after cutting the laminate, the surface protection material 6 is peeled off to obtain a monolithic laminate. The monolithic laminate is provided with an inorganic material layer 15A, a wafer 13A and a resin layer 16A which are each monolithic in sequence. Furthermore, the monolithic laminate is provided with an electrode 14A which penetrates the monolithic laminate. From the viewpoint of removing foreign matter, the surface of the monolithic laminate can be cleaned with pure water, a solvent or the like after peeling off the surface protection material 6. At this time, it is also possible to clean the monolithic laminate at once while a plurality of monolithic laminates are loaded on a frame.

[0310] Then, if Figure 1e As shown, the inorganic material layer 5 on the surface of the wafer 3 is brought into contact with the resin layer 16A of the individualized stacked body and temporarily fixed. At this time, a plurality of individualized stacked bodies may be temporarily fixed in the width direction and the length direction.

[0311] like Figure 1f As shown in FIG. 1 , the inorganic material layer 15A of the individualized stacked body temporarily fixed to the wafer 3 is subjected to the surface activation treatment as described above. After the surface activation, the surface of the inorganic material layer 15A may be cleaned with pure water, a solvent, or the like.

[0312] according to Figure 1c and Figure 1d The steps shown in the figure are used to obtain a monolithic laminated body having an inorganic material layer 15B, a wafer 13B and a resin layer 16B which are monolithicized in sequence. The monolithic laminated body has an electrode 14B that penetrates the monolithic laminated body. Figure 1g As shown, the inorganic material layer 15A of the individual stacked body temporarily fixed to the wafer 3 is brought into contact with the resin layer 16B of the individual stacked body for temporary fixation. At this time, a plurality of individual stacked bodies may be temporarily fixed in the width direction and the length direction.

[0313] Repeat Figure 1f and Figure 1g The process shown in the figure is performed to stack the monolithic stack in a temporarily fixed state in the height direction. After the stacking of the monolithic stack is completed, the stack of the monolithic stack is heated at above 100°C. Thus, the wafer 3 and the monolithic wafer 13B can be joined via the inorganic material layer 5 and the resin layer 16A, and the monolithic stack stacked in the height direction can be joined via the monolithic inorganic material layers and the resin layers. From the viewpoint of improving the bonding strength between the electrodes, it is preferred to heat the stack of the monolithic stack at above 130°C. As a result, there is a tendency that the components (for example, copper) contained in each electrode diffuse and the bonding strength between the electrodes is improved.

[0314] Through the above, such as Figure 1h As shown, the substrate stack 100 is obtained.

[0315] <Example 2 of the method for producing a substrate laminate>

[0316] Below, use Figure 2a to Figure 2i Example 2 of the method for manufacturing a substrate stack is described. In Example 2 of the method for manufacturing a substrate stack, a wafer without an electrode is used, and finally a through hole is provided in the substrate stack without an electrode, and an electrode is provided in the through hole, which is different from Example 1 of the method for manufacturing a substrate stack.

[0317] like Figure 2a As shown in FIG. 1 , a wafer 23 having a flattened surface is prepared. An inorganic material layer 25 such as an oxide film is formed on the surface of the wafer 23. The wafer 23 is fixed to the carrier 1 via the temporary fixing material 2.

[0318] Then, if Figure 2b As shown, the inorganic material layer 25 on the surface of the wafer 23 is subjected to the surface activation treatment as described above.

[0319] Furthermore, a laminated body including an inorganic material layer 35, a wafer 33, and a resin layer 36 in this order is prepared. Figure 2c As shown, the surface protection material 6 is arranged on the inorganic material layer 35 side in the laminate.

[0320] like Figure 2d As shown, after cutting the laminated body, the surface protection material 6 is peeled off to obtain a single-piece laminated body. The single-piece laminated body sequentially includes the inorganic material layer 35A, the wafer 33A and the resin layer 36A which are each single-pieced. From the viewpoint of removing foreign matter, the surface of the single-piece laminated body can be cleaned with pure water, a solvent, etc. after peeling off the surface protection material 6. At this time, it is also possible to clean a plurality of single-piece laminated bodies at a time while loading them on a frame.

[0321] Then, if Figure 2e As shown, the inorganic material layer 25 on the surface of the wafer 23 is brought into contact with the resin layer 36A of the individualized stacked body to be temporarily fixed. At this time, a plurality of individualized stacked bodies may be temporarily fixed in the width direction and the length direction.

[0322] like Figure 2f As shown in FIG. 1 , the inorganic material layer 35A of the individual stacked body temporarily fixed to the wafer 23 is subjected to the surface activation treatment as described above. After the surface activation, the surface of the inorganic material layer 35A can be cleaned with pure water, a solvent, or the like.

[0323] pass Figure 2c and Figure 2d The steps shown in the figure are followed to obtain a monolithic laminated body including the inorganic material layer 35B, the wafer 33B and the resin layer 36B which are monolithicized in sequence. Figure 2g As shown, the inorganic material layer 35A of the individual stacked body temporarily fixed to the wafer 23 is brought into contact with the resin layer 36B of the individual stacked body to be temporarily fixed. At this time, a plurality of individual stacked bodies may be temporarily fixed in the width direction and the length direction.

[0324] Repeat Figure 2f and Figure 2g The processing shown in the figure is performed to stack the monolithic stacked bodies in a temporarily fixed state in the height direction. After the stacking of the monolithic stacked bodies is completed, the monolithic stacked bodies are heated at a temperature above 100°C. Thus, the wafer 23 and the monolithic wafer 33B can be bonded via the inorganic material layer 25 and the resin layer 36A, and the monolithic stacked bodies stacked in the height direction can be bonded via the individual inorganic material layers and the individual resin layers. As a result, as shown in FIG. Figure 2h As shown, the substrate stack 200 is obtained.

[0325] Furthermore, through holes penetrating the stacked individual stacks in the height direction are provided in the substrate stack 200. Methods for forming the through holes include dry etching using gas, laser ablation, etc. Next, electrodes 34 penetrating the stacked individual stacks are formed in the through holes.

[0326] Through the above, such as Figure 2i As shown, a substrate laminate 300 including electrodes 34 penetrating the individual laminate is obtained.

[0327] [Substrate laminate]

[0328] The substrate stack disclosed in the present invention comprises: a first stack, which comprises a first resin layer, a first substrate, and a first inorganic material layer in sequence, the first resin layer is arranged on one surface, and the first inorganic material layer is arranged on another surface; and a second stack, which comprises a second resin layer, a second substrate, and a second inorganic material layer in sequence, the second resin layer is arranged on one surface, and the second inorganic material layer is arranged on another surface, the first stack and the second stack are stacked via the first resin layer of the first stack and the second inorganic material layer of the second stack.

[0329] The first and second stacks in the substrate stack of the present invention may be stacks three-dimensionally mounted on a substrate such as a wafer, and examples thereof include the first and second stacks used in the method for manufacturing the substrate stack of the present invention. Preferred embodiments of the first and second stacks in the substrate stack are the same as those of the first and second stacks in the method for manufacturing the substrate stack of the present invention.

[0330] For example, as specific examples of the first laminate and the second laminate in the substrate laminate, there can be mentioned: Figure 1c or Figure 2c The stacked body shown, Figure 1d and Figure 2d The singulated stack is shown.

[0331] It should be noted that the first stack or the second stack in the substrate stack of the present disclosure is preferably a stack for a three-dimensional semiconductor device.

[0332] In the substrate stack disclosed herein, preferably, the first stack has electrodes on a portion of the surface of the first resin layer and a portion of the surface of the first inorganic material layer, and the second stack has electrodes on a portion of the surface of the second resin layer and a portion of the surface of the second inorganic material layer.

[0333] In addition, as a preferable aspect of an electrode, it is the same as the preferable aspect of an electrode in the manufacturing method of the substrate laminated body of the above-mentioned present disclosure.

[0334] <Modification of the method for producing a substrate laminate>

[0335] In a modified example of the manufacturing method of the substrate laminate of the present disclosure, the difference from the manufacturing method of the substrate laminate of the present disclosure is that a laminate (third laminate) formed by stacking in the order of the first resin layer, the first substrate, and the third resin layer is used to replace the first laminate, and a laminate (third laminate) formed by stacking in the order of the second resin layer, the first substrate, and the fourth resin layer is used to replace the second laminate. That is, in the laminate (third laminate), the first inorganic material layer in the first laminate is replaced by the third resin layer, and in the laminate (fourth laminate), the second inorganic material layer in the second laminate is replaced by the fourth resin layer. Then, the first resin layer is joined to the fourth resin layer by process C, thereby obtaining a substrate laminate in the modified example.

[0336] In the modified example, the first resin layer and the fourth resin layer preferably have different resin compositions, and the resin material used to form the first resin layer and the resin material used to form the fourth resin layer preferably have different resin compositions. Thus, even when the thickness of the third laminate and the fourth laminate is small, there is a tendency to appropriately suppress the warping of the substrate laminate.

[0337] The resin material for forming the first resin layer is preferably a resin material capable of forming a resin layer having a complex elastic modulus of 0.1 GPa to 10 GPa at 23° C. That is, the complex elastic modulus of the first resin layer at 23° C. is preferably 0.1 GPa to 10 GPa.

[0338] The resin material for forming the first resin layer and the preferred conditions for the first resin layer are the same as those described in the above-mentioned method for producing the substrate laminate of the present disclosure.

[0339] The resin material used in forming the fourth resin layer is not particularly limited as long as the composition is different from that of the resin material used in forming the first resin layer. For example, materials that form bonds or structures such as polyimide, polyamide, polyamideimide, polyparaxylene, polyarylene ether, tetralin, and octahydroanthracene by cross-linking; materials that form nitrogen-containing ring structures such as polybenzoxazole and polybenzoxazine; materials that form bonds or structures such as Si-O by cross-linking; organic materials such as siloxane-modified compounds, benzocyclobutene, epoxy compounds, etc.

[0340] The resin material used in forming the fourth resin layer is preferably a material that forms a polyimide bond by crosslinking, benzocyclobutene, an epoxy compound, a siloxane-modified compound, etc. The material that forms a polyimide bond by crosslinking is preferably a siloxane compound that forms a polyimide bond by crosslinking, and the siloxane-modified compound is preferably epoxy-modified siloxane.

[0341] -Description of Reference Numerals-

[0342] 1: carrier, 2: temporary fixing material, 3: chip, 4: electrode, 5: inorganic material layer, 6: surface protection material, 13: chip, 13A: chip, 13B: chip, 14: electrode, 14A: electrode, 14B: electrode, 15: inorganic material layer, 15A: inorganic material layer, 15B: inorganic material layer, 16: resin layer, 16A: resin layer, 16B: resin layer, 23: chip, 25: inorganic material layer, 33: chip, 33A: chip, 33B: chip, 34: electrode, 35: inorganic material layer, 35A: inorganic material layer, 35B: inorganic material layer, 36: resin layer, 36A: resin layer, 36B: resin layer, 100: substrate stack, 200: substrate stack, 300: substrate stack.

[0343] It should be noted that the disclosure of Japanese Patent Application No. 2022-109052 filed on July 6, 2022 is incorporated herein by reference in its entirety. In addition, all documents, patent applications, and technical standards described in this specification are incorporated into this specification by reference to the same extent as if each document, patent application, and technical standard were specifically and separately described.

Claims

1. A method for manufacturing a substrate laminate, comprising: Step A, preparing a first laminate and a second laminate, wherein the first laminate is laminated in the order of a first resin layer, a first substrate, and a first inorganic material layer, wherein the first resin layer is arranged on one surface, and the first inorganic material layer is arranged on the other surface, and the second laminate is laminated in the order of a second resin layer, a second substrate, and a second inorganic material layer, wherein the second resin layer is arranged on one surface, and the second inorganic material layer is arranged on the other surface; Step B, laminating the first laminate and the second laminate by bringing the first resin layer of the first laminate into contact with the second inorganic material layer of the second laminate; and Step C: after the step B, heating the first stacked body and the second stacked body at 100° C. or higher.

2. The method for manufacturing a substrate laminate according to claim 1, wherein the first laminate comprises electrodes on a portion of a surface of the first resin layer and a portion of a surface of the first inorganic material layer, The second laminate includes electrodes on a portion of a surface of the second resin layer and a portion of a surface of the second inorganic material layer. 3 . The method for producing a substrate laminate according to claim 2 , further comprising, before the step B, a step of subjecting the second inorganic material layer to a surface activation treatment.

4. The method for manufacturing a substrate stack according to claim 1, comprises the following steps after step C: providing a through hole in the first stack and the second stack from the surface on the first inorganic material layer side toward the surface on the second resin layer side, and forming an electrode in the through hole that penetrates the first stack and the second stack. 5 . The method for producing a substrate laminate according to claim 1 , further comprising, before the step B, a step of washing the second inorganic material layer. 6 . The method for producing a substrate laminate according to claim 1 , further comprising, before the step B, a step of providing a surface protection layer on the second inorganic material layer. 7 . The method for producing a substrate laminate according to claim 1 , wherein before the first resin layer and the second inorganic material layer are brought into contact with each other in the step B, the first resin layer has a complex elastic modulus of 0.1 GPa to 20 GPa at 23° C. 8 . The method for producing a substrate laminate according to claim 1 , wherein before the first resin layer and the second inorganic material layer are brought into contact with each other in the step B, a curing rate of the first resin layer is 70% to 100%. 9 . The method for producing a substrate laminate according to claim 1 , wherein before the first resin layer and the second inorganic material layer are brought into contact with each other in the step B, the first resin layer has a surface roughness Ra of 0.01 nm to 1.2 nm. 10 . The method for producing a substrate laminate according to claim 1 , wherein the first resin layer has at least one functional group selected from the group consisting of a silanol group, an amino group, an epoxy group, a hydroxyl group, and a functional group having an unsaturated bond on a surface thereof. 11 . The method for producing a substrate laminate according to claim 1 , wherein the first resin layer includes a siloxane bond and at least one selected from the group consisting of an ester bond, an ether bond, an amide bond, and an imide bond. 12 . The method for producing a substrate laminate according to claim 1 , wherein the second inorganic material layer contains at least one element selected from the group consisting of Si, Ga, Ge, and As.

13. A substrate laminate, comprising: A first laminate having a first resin layer, a first substrate, and a first inorganic material layer in this order, wherein the first resin layer is arranged on one surface and the first inorganic material layer is arranged on the other surface; and The second laminate comprises a second resin layer, a second substrate, and a second inorganic material layer in this order, wherein the second resin layer is arranged on one surface and the second inorganic material layer is arranged on the other surface. The first stacked body and the second stacked body are stacked via the first resin layer of the first stacked body and the second inorganic material layer of the second stacked body.

14. The substrate laminate according to claim 13, wherein the first laminate comprises electrodes on a portion of a surface of the first resin layer and a portion of a surface of the first inorganic material layer, The second laminate includes electrodes on a portion of a surface of the second resin layer and a portion of a surface of the second inorganic material layer.

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