The purpose of the present invention is to provide a
semiconductor device manufacturing method, whereby
cutting reliability of an
adhesive film can be improved and debris
contamination due to the
adhesive film can be suppressed. Provided is a
semiconductor device manufacturing method which is provided with: a step wherein, after forming a groove (4S) on the front surface of a
semiconductor wafer (4), a protective
adhesive film (44) is adhered, the rear surface of the semiconductor
wafer is ground, and the groove is exposed from the rear surface; a step wherein, after adhering the adhesive film on the rear surface of the semiconductor
wafer, the protective adhesive film is peeled; and a step wherein a
laser beam having a
wavelength of 355 nm is radiated along the groove exposed from the adhesive film, and the adhesive film is
cut. The adhesive film has (a) a
light absorption coefficient of 40 cm-1 or more at a
wavelength of 355 nm, (b) a tensile storage
elastic modulus of 0.5-20 MPa at 50 DEG C, and (c) a tensile storage
elastic modulus of 0.3-7 MPa at 120 DEG C, or a
melt viscosity of 2,000 Pa.s or more at 120 DEG C.