Transfer method and transfer member for light emitting diode element

Abstract

The invention provides a transfer printing method and a transfer printing member of a light emitting diode element. LED elements formed on a plurality of different LED wafers are uniformly and simultaneously transferred. A method for transferring an LED element includes: forming a resin layer in a first state including a resin material on a support plate; embedding at least one LED wafer in the resin layer by pressing the resin layer onto a second surface of the LED wafer, the second surface being on the opposite side from the first surface, of the LED wafer, the first surface of which is provided with a plurality of LED elements; transferring the resin layer from the first state to a second state in which the viscosity is higher than that of the first state and the Young's modulus is higher than the internal stress of the LED wafer; and pressing the LED wafer embedded in the resin layer to a circuit board on which a plurality of electrodes having a convex shape are provided so as to correspond to the plurality of LED elements, thereby connecting the plurality of LED elements provided on the LED wafer to the plurality of electrodes.

Description

Technical Field

[0001] The invention relates to a transfer method and a transfer component for a light emitting diode element. Background Art

[0002] In recent years, micro-light emitting diode (LED) displays have attracted much attention as a new display technology. Micro-LED displays are display devices that use miniaturized LED elements as pixels and arrange them in an array on the display surface. Micro-LED displays can display images with high contrast and high response speed by individually controlling the light emission of the LED elements of each pixel.

[0003] In the manufacturing process of such a micro LED display, the following is studied: forming a plurality of LED elements on a wafer suitable for crystal growth of a compound semiconductor, and bonding the wafer to a circuit substrate, thereby collectively transferring the plurality of LED elements to the circuit substrate.

[0004] In addition, the following contents have been studied: by attaching a plurality of wafers formed with LED elements to a wafer supporting substrate, a plurality of LED elements formed on each of the plurality of wafers are transferred to a circuit substrate at a time. However, there is a relatively large variation in the thickness of the wafers formed with LED elements, so the heights of the plurality of LED elements formed on the wafers also vary.

[0005] For example, Patent Document 1 listed below discloses that when a plurality of chip components having different heights cut out from different wafers are mounted on a circuit board, the back surfaces of the plurality of chip components are pressurized via a buffer layer.

[0006] [Prior art literature]

[0007] [Patent Document]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 10-256311 Summary of the invention

[0009] [Problems to be solved by the invention]

[0010] However, the technology disclosed in Patent Document 1 is a technology used when mounting individual chip components cut from a wafer on a circuit board. Therefore, the technology disclosed in Patent Document 1 is not suitable for transferring a plurality of LED elements formed in a plurality of wafers attached to a wafer support substrate to a circuit board at a time.

[0011] Therefore, the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a novel and improved method for transferring LED elements and a transfer member capable of uniformly transferring LED elements formed on a plurality of LED wafers having different thicknesses at once.

[0012] [Technical means to solve the problem]

[0013] In order to solve the above-mentioned problem, according to a certain aspect of the present invention, there is provided a method for transferring LED elements, comprising: a step of forming a resin layer in a first state including a resin material on a support plate; a step of burying at least one of the LED chips in the resin layer by pressing the resin layer onto a second surface opposite to the first surface of an LED chip having a plurality of LED elements arranged on the first surface; a step of migrating the resin layer from the first state to a second state having a higher viscosity than the first state and a higher Young's modulus than the internal stress of the LED chip; and a step of pressing the LED chip buried in the resin layer onto a circuit substrate having a plurality of convex electrodes arranged corresponding to the plurality of LED elements, thereby connecting the plurality of LED elements arranged on the LED chip to the plurality of electrodes.

[0014] In addition, in order to solve the above-mentioned problem, according to another aspect of the present invention, there is provided a transfer component, comprising: a support plate; a resin layer, comprising a resin material and arranged on the support plate; and at least one LED chip, wherein a plurality of LED elements are arranged on a first surface, and a second surface opposite to the first surface is buried in the resin layer, and the resin layer can migrate from a first state to a second state having a higher viscosity than the first state and a higher Young's modulus than the internal stress of the LED chip.

[0015] [Effects of the Invention]

[0016] As described above, according to the present invention, LED elements formed on a plurality of different LED wafers can be uniformly transferred collectively. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic cross-sectional view for explaining a method for transferring an LED element according to an embodiment of the present invention.

[0018] Figure 2 It is a schematic cross-sectional view for explaining the transfer method of the LED element according to the above embodiment.

[0019] Figure 3 It is a schematic cross-sectional view for explaining the transfer method of the LED element according to the above embodiment.

[0020] Figure 4It is a schematic cross-sectional view for explaining the transfer method of the LED element according to the above embodiment.

[0021] Figure 5 This is a flowchart showing the flow of the LED element transfer method according to the embodiment.

[0022] Figure 6 This is a schematic cross-sectional view for explaining a method for transferring an LED element according to a first modification.

[0023] Figure 7 This is a schematic cross-sectional view for explaining a transfer method of an LED element according to a second modification.

[0024] Figure 8 is a schematic cross-sectional view illustrating the background of the present invention.

[0025] [Explanation of Symbols]

[0026] 100: LED chip

[0027] 110: LED components

[0028] 200: Support plate

[0029] 210: Resin layer

[0030] 220: protrusion

[0031] 290: Adhesive layer

[0032] 300: Circuit board

[0033] 310: Electrode

[0034] 400: Stamping components

[0035] 500: Temporary fixed platform

[0036] S: Stimulation DETAILED DESCRIPTION

[0037] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, components having substantially the same functional structure are denoted by the same reference numerals, and repeated description is omitted.

[0038] <1. Background of the present invention>

[0039] First, refer to Figure 8 The background of the present invention is described. Figure 8 is a schematic cross-sectional view illustrating the background of the present invention.

[0040] like Figure 8As shown, for example, in the manufacturing process of the micro LED display device, the following contents are studied: a plurality of LED elements 110 formed on a plurality of LED wafers 100 are collectively transferred to a circuit substrate 300. Specifically, the following contents are studied: after a plurality of LED wafers 100 formed with a plurality of LED elements 110 are bonded to one main surface of a support plate 200 via an adhesive layer 290, the support plate 200 is pressed against the circuit substrate 300, thereby collectively transferring the plurality of LED elements 110 to the circuit substrate 300.

[0041] The circuit substrate 300 is a substrate provided with a driving circuit for driving each of the transferred LED elements 110 individually and a control circuit for controlling the driving of each of the LED elements 110. The circuit substrate 300 may be, for example, a glass substrate, a glass epoxy substrate, an epoxy substrate, a polyimide substrate, or a (meth)acrylic substrate, or may be a flexible substrate including polyester or polyethersulfone. The circuit substrate 300 may also be, for example, a pixel array substrate of a micro LED display device.

[0042] An electrode 310 having a convex shape such as a cone, a cylindrical shape, or a tapered shape is provided on the surface of the circuit substrate 300 to which the LED element 110 is transferred. The electrode 310 includes metal at least on the surface, and is a connection terminal that electrically connects the drive circuit and the control circuit provided on the circuit substrate 300 to the electrode of the LED element 110. The electrode 310 may include, for example, a single metal or multiple metals, or may be formed by coating the surface of a resin with a metal. In addition, the electrode 310 may also include a bump, a conductive adhesive, or a solder. For example, the electrode 310 may be arranged corresponding to the pixel pitch of the micro LED display device, and a plurality of electrodes may be provided for each pixel.

[0043] The LED wafer 100 is a substrate having a plurality of LED elements 110 formed in a matrix on one of its main surfaces. Specifically, a compound semiconductor is crystal-grown on one of the main surfaces of the LED wafer 100 to form a pn junction in the stacking direction. Then, the crystal-grown compound semiconductor layer is patterned into a grid shape to form the LED elements 110 in a matrix on one of the main surfaces of the LED wafer 100. Two electrodes that function as, for example, a positive electrode or a negative electrode are formed on each of the patterned LED elements 110.

[0044] For example, the LED wafer 100 may be a disk-shaped or rectangular transparent sapphire substrate suitable for crystal growth of the compound semiconductor constituting the LED element 110. In addition, the compound semiconductor constituting the LED element 110 may be, for example, InGaN, GaN, or AlGaN.

[0045] The support plate 200 is a rigid substrate having a main surface with a larger area than the LED chip 100. Specifically, the support plate 200 is a substrate having a main surface with an area corresponding to the plurality of LED chips 100, and the plurality of LED chips 100 are bonded to the main surface of the support plate 200 via the adhesive layer 290. The support plate 200 can simultaneously transfer the plurality of LED elements 110 formed on each of the LED chips 100 to the circuit substrate 300 by pressing the main surface to which the plurality of LED chips 100 are bonded to the circuit substrate 300.

[0046] The support plate 200 may be, for example, a transparent glass substrate having a flat main surface. The LED wafer 100 is attached to the flat main surface of the support plate 200 , so that warpage caused by forming the LED element 110 can be corrected.

[0047] The adhesive layer 290 is a layer for bonding the support plate 200 and the LED chip 100. The adhesive layer 290 may include a polyimide adhesive, an epoxy adhesive, or an acrylic adhesive.

[0048] Furthermore, the plurality of LED chips 100 are attached to the support plate 200 in such a manner that the pitches of the plurality of LED elements 110 are the same between the plurality of LED chips 100. That is, the plurality of LED chips 100 are attached to the main surface of the support plate 200 in such a manner that the plurality of LED elements 110 are arranged at a pitch corresponding to the arrangement pitch of the electrodes 310 provided on the circuit substrate 300.

[0049] Here, in the case where the tolerance of the thickness of the LED wafer 100 is greater than the height of the electrode 310 provided on the circuit substrate 300, the LED elements 110 formed on the plurality of LED wafers 100 having different thicknesses are unevenly pressed against the electrode 310 provided on the circuit substrate 300. For example, the LED elements 110 formed on the thick LED wafer 100 are pressed against the electrode 310 provided on the circuit substrate 300 with excessive pressure. On the other hand, the LED elements 110 formed on the thin LED wafer 100 may not be pressed against the electrode 310 provided on the circuit substrate 300.

[0050] The present invention is conceived in view of the above situation. The present invention can make the heights of the plurality of LED elements 110 formed on the plurality of LED chips 100 uniform regardless of the thickness of the LED chips 100 by embedding the LED chips 100 in the resin layer provided on the support plate 200. According to the present invention, since the height from the support plate 200 to the LED element 110 can be uniformly uniform, the LED elements 110 formed on the plurality of LED chips 100 can be uniformly transferred to the electrodes 310 of the circuit substrate 300 at one time.

[0051] <2. Implementation Method>

[0052] Next, refer to Figure 1 to Figure 4 , a method for transferring the LED element 110 according to one embodiment of the present invention will be described. Figure 1 to Figure 4 This is a schematic cross-sectional view for explaining the transfer method of the LED element 110 according to the present embodiment.

[0053] like Figure 1 As shown in FIG. 1 , in this embodiment, a resin layer 210 is provided on the main surface of the support plate 200. The resin layer 210 includes a resin material and is a layer capable of transitioning from a first state to a second state. Figure 1 In the embodiment, the resin layer 210 is set to the first state.

[0054] The first state is a state in which the viscosity is low enough to allow the LED chip 100 to be buried in the resin layer 210, and the fluidity of the resin layer 210 is high. On the other hand, the second state is a state in which the viscosity is higher than the first state, and the Young's modulus is higher than the internal stress of the LED chip 100. The resin material contained in the resin layer 210 can migrate from the first state to the second state by stimulation such as heat, light, or chemical reaction.

[0055] Specifically, the resin material contained in the resin layer 210 may be a curable resin. For example, the resin material contained in the resin layer 210 may be a thermosetting resin that transitions from a first state to a second state by heat, or may be a light-curing resin that transitions from a first state to a second state by light such as ultraviolet rays. These resin materials can cause the resin layer 210 to transition from a first state to a second state by being stimulated by heat or light.

[0056] Alternatively, the resin material contained in the resin layer 210 may also be an adhesive. For example, the resin material contained in the resin layer 210 may be a moisture-hardening adhesive that transitions from the first state to the second state by chemical reaction with moisture in the air, etc., a solvent-volatile adhesive that transitions from the first state to the second state by solvent volatilization, or a hardener-mixed adhesive that transitions from the first state to the second state by chemical reaction with a hardener. These adhesives can cause the resin layer 210 to transition from the first state to the second state as time passes after the resin layer 210 is formed.

[0057] Furthermore, the resin material contained in the resin layer 210 may be a thermoplastic resin or a hot melt adhesive that migrates from the second state to the first state by heat. The thermoplastic resin or hot melt adhesive migrates to the first state with high fluidity and liquid by heating, and migrates to the second state with low fluidity and solid by cooling. That is, the thermoplastic resin or hot melt adhesive can be regarded as a resin material that migrates from the first state to the second state by cooling.

[0058] On the other hand, the plurality of LED wafers 100 are placed on the temporary fixing table 500 with the main surface provided with the plurality of LED elements 110 facing downward. At this time, the plurality of LED elements 110 can be vacuum-adsorbed on the temporary fixing table 500. The plurality of LED wafers 100 may be warped in the thickness direction due to the formation of the plurality of LED elements 110. Therefore, the temporary fixing table 500 can correct the warping of the plurality of LED wafers 100 in such a way that the placement surface of the plurality of LED elements 110 is flat by vacuum-adsorbing the plurality of LED elements 110 formed in the placed plurality of LED wafers 100.

[0059] Then, if Figure 2 As shown, the support plate 200 buries the LED chips 100 in the resin layer 210 by pressing the resin layer 210 in the first state onto the plurality of LED chips 100 placed on the temporary fixing table 500. Specifically, the support plate 200 can bury the plurality of LED chips 100 in the resin layer 210 in the first state from the back side opposite to the main surface on which the plurality of LED elements 110 are provided by being pressed by the stamping member 400. At this time, the viscosity of the resin layer 210 in the first state is low and the fluidity is high. Therefore, the plurality of LED chips 100 are buried in the resin layer 210 by the pressing from the stamping member 400 to the depth corresponding to each thickness.

[0060] Then, if Figure 3 As shown, the resin layer 210 in which the plurality of LED chips 100 are embedded is subjected to a stimulus S for transitioning from the first state to the second state. The stimulus S is, for example, heat, light, chemical reaction, or passage of time, and is selected according to the resin material contained in the resin layer 210 .

[0061] The resin layer 210 is in a state where the viscosity is higher than that in the first state and the Young's modulus is higher than the internal stress of the LED chip 100 by migrating to the second state. That is, the resin layer 210 migrates from the state of high fluidity in the first state to the hardened state in the second state by the stimulus S. Thus, the plurality of LED chips 100 are embedded and fixed to the resin layer 210 in a state where the height from the support plate 200 to the LED element 110 is uniform. In addition, since the Young's modulus of the resin layer 210 in the second state is higher than the internal stress of the LED chip 100, the LED chip 100 is embedded and fixed to the resin layer 210 in a state where the warpage placed on the temporary fixing table 500 is corrected.

[0062] Therefore, if Figure 4As shown, the plurality of LED chips 100 are in a state of uniform height from the support plate 200 to the LED elements 110. Therefore, the support plate 200 presses the plurality of LED elements 110 to the circuit substrate 300 in the above state, thereby uniformly transferring the plurality of LED elements 110 formed on the plurality of LED chips 100 of different thicknesses to the circuit substrate 300 at a time. Figure 4 The stacked body of the plurality of LED chips 100, the resin layer 210, and the support plate 200 shown is an embodiment of the transfer member in the present invention.

[0063] Furthermore, refer to Figure 5 , the process of the transfer method of the LED element 110 of this embodiment is described. Figure 5 This is a flowchart showing the flow of the method for transferring the LED element 110 according to the present embodiment.

[0064] like Figure 5 As shown, first, a resin layer 210 in a first state is formed on one of the main surfaces of the support plate 200 (S101). Specifically, the resin layer 210 in the first state is formed by coating a resin material in a first state on one of the main surfaces of the support plate 200. As described above, the resin material may be any one of a thermosetting resin, a light-curing resin, a moisture-curing adhesive, a solvent-volatile adhesive, a hardener-mixed adhesive, a thermoplastic resin, or a hot-melt adhesive.

[0065] Next, a plurality of LED wafers 100 formed with LED elements 110 are placed on the temporary fixing table 500 (S103). Specifically, the plurality of LED wafers 100 are placed on the temporary fixing table 500 in a direction such that the main surface formed with the LED elements 110 faces the temporary fixing table 500. At this time, the temporary fixing table 500 can correct the warping of the placed LED wafers 100 by vacuum adsorbing the plurality of LED elements 110.

[0066] Then, the plurality of LED chips 100 are buried in the resin layer 210 by pressing the resin layer 210 onto the plurality of LED chips 100 placed on the temporary fixing table 500 (S105). Specifically, the support plate 200 can bury the plurality of LED chips 100 in the resin layer 210 in the first state by pressing the resin layer 210 from the back side opposite to the main surface on which the plurality of LED elements 110 are formed. At this time, since the viscosity of the resin layer 210 in the first state is low and the fluidity is high, the plurality of LED chips 100 are buried in the resin layer 210 to the depth corresponding to each thickness.

[0067] Next, the resin layer 210 is moved from the first state to the second state (S107) by a stimulus S corresponding to the resin material contained in the resin layer 210. For example, the resin layer 210 can be moved from the first state to the second state by a stimulus S such as heat, light, chemical reaction, or the passage of time. When the resin layer 210 moves to the second state, the plurality of LED chips 100 embedded in the resin layer 210 are fixed in a state where the height from the support plate 200 to the LED element 110 is uniform and the warping is corrected.

[0068] Then, by making the LED chip 100 face the circuit substrate 300 and pressing the support plate 200 to the circuit substrate 300, the plurality of LED elements 110 are bonded to the circuit substrate 300 (S109). Specifically, the support plate 200 is pressed to the circuit substrate 300 in a state where the plurality of LED elements 110 formed in the plurality of LED chips 100 embedded in the resin layer 210 and the electrodes 310 of the circuit substrate 300 face each other. Thus, the plurality of LED elements 110 (more specifically, the electrodes provided on the plurality of LED elements 110) are respectively bonded to the electrodes 310, and the plurality of LED elements 110 are bonded to the circuit substrate 300 by an adhesive. At this time, the plurality of LED elements 110 are in a state where the height from the support plate 200 is uniformly consistent, and therefore are uniformly pressed to the electrodes 310 of the circuit substrate 300.

[0069] Next, the plurality of LED wafers 100 are peeled off from the plurality of LED elements 110 by laser peeling (S111). Specifically, by irradiating the interfaces between the plurality of LED wafers 100 and the plurality of LED elements 110 with laser light, a portion of the LED elements 110 is vaporized, thereby peeling off the plurality of LED wafers 100 from the plurality of LED elements 110. Thus, the plurality of LED wafers 100, the resin layer 210, and the support plate 200 can be peeled off from the plurality of LED elements 110 transferred to the circuit substrate 300.

[0070] According to the above process, the transfer method of the LED element 110 of this embodiment can make the height from the support plate 200 to the plurality of LED elements 110 uniform, so the plurality of LED elements 110 can be uniformly transferred to the circuit substrate 300 at one time.

[0071] <3. Modifications>

[0072] (3.1. First Modification)

[0073] Then, refer to Figure 6 , a first variation of the method for transferring the LED element 110 is described. Figure 6 It is a schematic cross-sectional view for explaining a transfer method of the LED element 110 according to the first modification.

[0074] like Figure 6 As shown, a plurality of protrusions 220 may be further provided on the support plate 200 , and the plurality of protrusions 220 press the plurality of LED chips 100 embedded in the resin layer 210 with a predetermined pressure distribution.

[0075] The plurality of protrusions 220 are made of a material having a Young's modulus higher than the internal stress of the LED chip 100, and are provided so as to protrude from the resin layer 210 or be contained in the resin layer 210. When the LED chip 100 is embedded in the resin layer 210, the plurality of protrusions 220 press the back surface of the LED chip 100 opposite to the main surface on which the LED element 110 is formed with a predetermined pressure distribution. Thus, the plurality of protrusions 220 assist in correcting the warpage of the LED chip 100, and can correct the warpage of the LED chip 100 more reliably.

[0076] Specifically, the plurality of protrusions 220 may include a convex resin material such as a conical shape, a cylindrical shape, a column shape, or a tapered shape. The plurality of protrusions 220 are patterned by photolithography to form a height, shape, and density that produces a pressure distribution that corrects the warping state of the LED chip 100. That is, the plurality of protrusions 220 may be formed to produce a height, shape, and density that produces a pressure distribution that is set based on the warping state of the LED chip 100. For example, the plurality of protrusions 220 may be set to a pressure distribution that presses the outer peripheral edge portion of the LED chip 100 more strongly than the central portion, so as to correct the warping of the LED chip 100 in which the main surface side on which the LED element 110 is formed expands and the back side opposite to the main surface contracts.

[0077] The plurality of protrusions 220 preferably have elasticity that allows them to be deformed by pressing when the plurality of LED chips 100 are embedded in the resin layer 210. This is because, if the plurality of protrusions 220 are not easily deformed, the plurality of LED elements 110 formed on the plurality of LED chips 100 may have different heights due to the pressing of the plurality of protrusions 220 on the plurality of LED chips 100.

[0078] According to the transfer method of the LED element 110 of the first modified example, the warpage generated in the LED wafer 100 can be corrected more reliably, so that the plurality of LED elements 110 formed on the LED wafer 100 can be transferred to the circuit board 300 more uniformly.

[0079] (3.2. Second Modification)

[0080] Then, refer to Figure 7 , a second modification example of the transfer method of the LED element 110 is described. Figure 7 It is a schematic cross-sectional view for explaining a transfer method of the LED element 110 according to the second modification.

[0081] like Figure 7 As shown, the support plate 200 can be divided for each LED chip 100. Specifically, the support plate 200 can be divided into a plurality of parts, and one LED chip 100 can be embedded in one support plate 200 in a one-to-one correspondence manner.

[0082] In this case, the plurality of LED chips 100 are respectively embedded in the resin layers 210 of the plurality of support plates 200 in such a manner that the height from the support plates 200 to the LED elements 110 is uniform among the plurality of support plates 200. Thus, the plurality of support plates 200 can transfer the plurality of LED elements 110 to the electrodes 310 of the circuit substrate 300 uniformly by simultaneously transferring the LED elements 110 to the circuit substrate 300 and making the height from the support plates 200 to the LED elements 110 uniform.

[0083] According to the second modified example of the method for transferring the LED element 110 , even when the plurality of LED chips 100 are not bonded to one support plate 200 , the plurality of LED elements 110 formed on the plurality of LED chips 100 can be collectively transferred to the circuit board 300 .

[0084] The preferred embodiments of the present invention are described in detail with reference to the accompanying drawings, but the present invention is not limited to the examples described above. It is obvious that anyone with ordinary knowledge in the technical field to which the present invention belongs can think of various variations or modifications within the scope of the technical ideas described in the claims, and it should be understood that these also belong to the technical scope of the present invention.

Claims

1. A method for transferring a light emitting diode element, characterized in that: include: a step of forming a resin layer in a first state including a resin material on the support plate; A step of embedding at least one of the light-emitting diode chips in the resin layer by pressing the resin layer against a second surface of a light-emitting diode chip having a plurality of light-emitting diode elements disposed on a first surface thereof, which is opposite to the first surface; a step of causing the resin layer to migrate from the first state to a second state having a higher viscosity than the first state and a higher Young's modulus than the internal stress of the light emitting diode wafer; as well as The step of pressing the light emitting diode chip buried in the resin layer to a circuit substrate provided with a plurality of electrodes having a convex shape corresponding to the plurality of light emitting diode elements, thereby connecting the plurality of light emitting diode elements provided on the light emitting diode chip to the plurality of electrodes.

2. The method for transferring a light emitting diode element according to claim 1, characterized in that: In the resin layer, a plurality of light emitting diode chips having different thicknesses are embedded so that the plurality of light emitting diode elements have the same height from the support plate.

3. The method for transferring a light emitting diode element according to claim 2, characterized in that: The plurality of light emitting diode wafers are placed on a temporary fixing table with the plurality of light emitting diode elements facing downward, and the resin layer is pressed on the second surface.

4. The method for transferring a light emitting diode element according to claim 3, characterized in that: The plurality of light emitting diode elements are vacuum-adsorbed on the temporary fixing platform.

5. The method for transferring a light emitting diode element according to claim 1, wherein: The transition from the first state to the second state is performed by heat, light, or a chemical reaction.

6. The method for transferring a light emitting diode element according to any one of claims 1 to 5, characterized in that: A plurality of protrusions are also provided on the support plate. The plurality of protrusions press the second surface of the light emitting diode chip with a predetermined pressure distribution.

7. The method for transferring a light emitting diode element according to claim 6, wherein: The predetermined pressure distribution is set based on a warpage state of the light emitting diode wafer.

8. The method for transferring a light emitting diode element according to claim 6, wherein: The plurality of protrusions include a material having a Young's modulus higher than an internal stress of the light emitting diode chip.

9. A transfer member, characterized in that: include: Support plate; A resin layer, comprising a resin material and disposed on the support plate; as well as At least one light emitting diode chip has a plurality of light emitting diode elements arranged on a first surface, and a second surface opposite to the first surface is embedded in the resin layer. The resin layer can be transferred from a first state to a second state having a higher viscosity than the first state and a higher Young's modulus than the internal stress of the light emitting diode chip.

Images