Light emitting diode chip and preparation method thereof

By using composite substrate and patterning processes in the preparation of Mini-LED chips, the preparation difficulty and chip problems caused by the reduction of chip thickness are solved, and effective thinning of chip thickness and reduction of production cost are achieved.

CN119653936APending Publication Date: 2025-03-18BOE MLED TECH CO LTD +1
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Patent Information

Application Number
CN202411876176.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-18
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

The reduction in the thickness of Mini-LED chips leads to increased production difficulties, and existing processes are difficult to continue to reduce chip thickness, resulting in adverse conditions such as chips and high production costs.

Method used

Using a composite substrate design, including a laminated first substrate and a second substrate, a light emitting unit is formed through a patterning process, and an electrode is formed on the composite substrate, and the second substrate is then peeled off, and the intermediate structure is separated by a scribed lobe process to form a plurality of light emitting diode chips.

Benefits of technology

This significantly reduces the defective situations such as fragmentation caused by the grinding process, reduces the preparation cost of the light emitting diode chip, and achieves effective thinning of the chip thickness.

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Abstract

The invention provides a light-emitting diode chip and a preparation method thereof, and belongs to the technical field of display, and the preparation method comprises the steps: providing a composite substrate comprising an epitaxial layer, the composite substrate comprises a first substrate and a second substrate which are stacked, and the epitaxial layer is arranged on the side, away from the second substrate, of the first substrate, the thickness of the second substrate is greater than that of the first substrate; performing a patterning process on the epitaxial layer to form a plurality of light-emitting units; forming an electrode on one side, deviating from the composite substrate, of the light-emitting unit; stripping the second substrate in the composite substrate from the first substrate to form an intermediate structural body comprising the first substrate and a plurality of light-emitting units; and separating the intermediate structure body through a scribing and splitting process to form a plurality of light-emitting diode chips. According to the light-emitting diode chip and the preparation method thereof provided by the invention, the adverse conditions such as fragment caused in the preparation of the light-emitting diode chip can be reduced, the thickness of the light-emitting diode chip is reduced, and the preparation cost is reduced.
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