Method of forming semiconductor structure
By forming and thinning the pad oxide layer in the embedded high-pressure process, the cumbersome problems in the existing process are solved, and the process simplification and efficiency improvement are achieved.
Patent Information
- Application Number
- CN202311210237.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-19
- Publication Date
- 2025-03-21
AI Technical Summary
In the existing embedded high-pressure process, it is necessary to re-form the pad oxide layer and the pad nitride layer in the shallow groove insulation process, resulting in cumbersome steps.
The first pad oxide layer and a nitride hard mask layer are formed on the substrates of the first device region and the second device region. After removing the nitride hard mask layer, the second pad oxide layer is thermally grown in the second device region, and a trench isolation structure is formed thereon, and the second pad oxide layer is thinned as a pad oxide layer for subsequent shallow groove insulation process.
The process flow is simplified, the step of re-growing the mat oxide layer is omitted, and the efficiency and simplification of the process is improved.