Semiconductor device including selector

By using dopant-injected insulating material in the selector pattern of semiconductor devices, the problem of unstable selector on and off state control in the prior art is solved, and more stable storage characteristics and uniform conductivity characteristics are achieved.

CN119677400APending Publication Date: 2025-03-21SK HYNIX INC
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Patent Information

Application Number
CN202410707610.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-19
Filing Date
2024-06-03
Publication Date
2025-03-21

AI Technical Summary

Technical Problem

It is difficult for existing semiconductor devices to effectively control the on and off states of the selector when storing data, resulting in unstable storage characteristics.

Method used

A semiconductor device is designed in which the selector pattern is composed of an insulating material implanted by dopant, the implantation direction of the dopant is different from the direction when the current flows through the selector pattern, and the selector pattern exhibits threshold switching characteristics when the voltage is applied.

Benefits of technology

By controlling the implantation direction and concentration of the dopant, the selector pattern exhibits uniform conductivity at different voltages, improving the switching characteristics and storage stability of the device.

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Abstract

The invention relates to a semiconductor device including a selector. The semiconductor device includes: a selector pattern including an insulating material having a dopant implanted into the insulating material along an implantation direction and having a first sidewall and a second sidewall facing the first sidewall, the selector pattern configured to exhibit different conductive characteristics with respect to a threshold voltage in response to an applied voltage; and first and second electrode layers formed over first and second sidewalls of the selector pattern, respectively, in which an injection direction of the dopant is different from a direction of a current flowing through the selector pattern between the first and second electrode layers when the selector pattern is turned on.
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